SCALPEL mask parametric study [4186-76] (English)
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- New search for: Engelstad, R. L.
- New search for: Lovell, E. G.
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- New search for: Engelstad, R. L.
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In:
Photomask technology; 20th Annual BACUS symposium on photomask technology
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697-706
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2001
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ISBN:
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ISSN:
- Conference paper / Print
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Title:SCALPEL mask parametric study [4186-76]
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Contributors:Dicks, G. A. ( author ) / Engelstad, R. L. ( author ) / Lovell, E. G. ( author ) / Liddle, J. A. ( author ) / Grenon, B. J. / Dao, G. T. / SPIE
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Conference:Annual symposium; 20th, Photomask technology; 20th Annual BACUS symposium on photomask technology ; 2000 ; Monterey, CA
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Published in:PROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 4186 ; 697-706
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Publisher:
- New search for: SPIE
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Publication date:2001-01-01
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Size:10 pages
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Lithographic performance results for a new 50-kV electron-beam mask writerChakarian, Varoujan / Bylciw, Stephen R. / Sauer, Charles A. / Trost, David / Zywno, Marek / Teitzel, Robin / Raymond, Frederick / Abboud, Frank E. et al. | 2001
- 1
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Lithographic performance results for a new 50-kV electron-beam mask writer [4186-01]Chakarian, V. / Bylciw, S. R. / Sauer, C. A. / Trost, D. / Zywno, M. / Teitzel, R. / Raymond, F. / Abboud, F. E. / SPIE et al. | 2001
- 16
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New architecture for laser pattern generators for 130 nm and beyondLjungblad, Ulric B. / Sandstrom, Torbjoern / Buhre, Hans / Duerr, Peter / Lakner, Hubert K. et al. | 2001
- 16
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New architecture for laser pattern generators for 130 nm and beyond [4186-02]Ljungblad, U. B. / Sandstrom, T. / Buhre, H. / Durr, P. / Lakner, H. / SPIE et al. | 2001
- 22
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Performance of JBX-9000MV with negative-tone resist for 130-nm reticle [4186-03]Takahashi, N. / Tsuzuki, M. / Kotani, J. / Yoshida, J. / Kodaira, Y. / Oi, Y. / Yamada, Y. / Matsuzawa, Y. / SPIE et al. | 2001
- 22
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Performance of JBX-9000MV with negative-tone resist for 130-nm reticleTakahashi, Naoki / Tsuzuki, Masayoshi / Kotani, Jun / Yoshida, Jun / Kodaira, Yuji / Oi, Yuko / Yamada, Yoshiro / Matsuzawa, Yuichi et al. | 2001
- 34
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New concept photomask repeater with stitching exposure technique [4186-04]Irie, N. / Muramatsu, K. / Ishii, Y. / Magome, N. / Umatate, T. / Kyoh, S. / Tanaka, S. / Inoue, S. / Higashikawa, I. / Mori, I. et al. | 2001
- 34
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New concept photomask repeater with stitching exposure techniqueIrie, Nobuyuki / Muramatsu, Koji / Ishii, Yuuki / Magome, Nobutaka / Umatate, Toshikazu / Kyoh, Suigen / Tanaka, Shun-Ichiro / Inoue, Soichi / Higashikawa, Iwao / Mori, Ichiro et al. | 2001
- 46
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Improved throughput in 0.6-NA laser reticle writers [4186-05]Valentin, G. E. / Hamaker, H. C. / Daniel, J. P. / Garg, V. / Sprenkel, D. R. / SPIE et al. | 2001
- 46
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Improved throughput in 0.6-NA laser reticle writersValentin, Gregory E. / Hamaker, Henry Chris / Daniel, Jay P. / Garg, Vishal / Sprenkel, Daniel R. et al. | 2001
- 58
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Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japan 2000 Best Presentation Award)Suda, Hideki / Mitsui, Hideaki / Nozawa, Osamu / Ohtsuka, Hitoshi / Takeuchi, Megumi / Nishida, Naoki / Okubo, Yasushi / Ushida, Masao et al. | 2001
- 58
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Development of MoSi-based halftone phase-shift blank and mask fabrication for ArF lithography (Photomask Japan 2000 Best Presentation Award) [4186-99]Suda, H. / Mitsui, H. / Nozawa, O. / Ohtsuka, H. / Takeuchi, M. / Nishida, N. / Ohkubo, Y. / Ushida, M. / SPIE et al. | 2001
- 73
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Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists [4186-06]Albelo, J. A. / Rathsack, B. M. / Pirogovsky, P. Y. / SPIE et al. | 2001
- 73
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Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresistsAlbelo, Jeff A. / Rathsack, Benjamen M. / Pirogovsky, Peter Y. et al. | 2001
- 85
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Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III [4186-07]Constantine, C. / Westerman, R. J. / Plumhoff, J. / SPIE et al. | 2001
- 85
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Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: IIIConstantine, Chris / Westerman, Russell J. / Plumhoff, Jason et al. | 2001
- 97
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Chrome dry etch process characterization using surface nanoprofilingRuhl, Guenther G. / Dietrich, Ralf / Ludwig, Ralf / Falk, Norbert / Morrison, Troy B. / Stoehr, Brigitte C. et al. | 2001
- 97
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Chrome dry etch process characterization using surface nanoprofiling [4186-08]Ruhl, G. G. / Dietrich, R. / Ludwig, R. / Falk, N. / Morrison, T. B. / Stoehr, B. C. / SPIE et al. | 2001
- 108
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Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nmKim, Chang-Hwan / Jeon, Chan-Uk / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 108
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Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm [4186-09]Kim, C.-H. / Jeon, C.-U. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 114
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Mask manufacturing rule check: how to save money in your mask shop [4186-11]Keck, M. C. / Ziegler, W. / Liebe, R. / Franke, T. / Ballhorn, G. / Kofferlein, M. / Thiele, J. / SPIE et al. | 2001
- 114
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Mask manufacturing rule check: how to save money in your mask shopKeck, Martin C. / Ziegler, Wolfram / Liebe, Roman / Franke, Torsten / Ballhorn, Gerd / Koefferlein, Matthias / Thiele, Joerg et al. | 2001
- 119
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Using manufacturing rule check to prescreen reticle inspection databasesHoward, Charles H. / DePesa, Paul / Linder, Curt J. et al. | 2001
- 119
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Using manufacturing rule check to prescreen reticle inspection databases [4186-12]Howard, C. H. / DePesa, P. / Linder, C. J. / SPIE et al. | 2001
- 129
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Methods used to streamline data preparation for memory products [4186-13]DePesa, P. / Leitermann, W. / SPIE et al. | 2001
- 129
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Methods used to streamline data preparation for memory productsDePesa, Paul / Leitermann, Wolfgang et al. | 2001
- 136
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ASIC data preparation management for OPC [4186-14]Dunham, T. G. / Leipold, W. C. / SPIE et al. | 2001
- 136
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ASIC data preparation management for OPCDunham, Timothy G. / Leipold, William C. et al. | 2001
- 140
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Efficient automated tapeout system [4186-15]Krieger, W. A. / Nasamran, C. / SPIE et al. | 2001
- 140
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Efficient automated tapeout systemKrieger, William A. / Nasamran, Chana et al. | 2001
- 148
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FIB-based local deposition of dielectrics for phase-shift mask modification [4186-17]Wanzenboeck, H. D. / Verbeek, M. / Maurer, W. / Bertagnolli, E. / SPIE et al. | 2001
- 148
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FIB-based local deposition of dielectrics for phase-shift mask modificationWanzenboeck, Heinz D. / Verbeek, Martin / Maurer, Wilhelm / Bertagnolli, Emmerich et al. | 2001
- 158
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Advanced FIB mask repair technology for ArF lithography: II [4186-18]Kubo, S. / Hiruta, K. / Morimoto, H. / Yasaka, A. / Hagiwara, R. / Adachi, T. / Morikawa, Y. / Iwase, K. / Hayashi, N. / SPIE et al. | 2001
- 158
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Advanced FIB mask repair technology for ArF lithography: IIKubo, Shinji / Hiruta, Koji / Morimoto, Hiroaki / Yasaka, Anto / Hagiwara, Ryoji / Adachi, Tatsuya / Morikawa, Yasutaka / Iwase, Kazuya / Hayashi, Naoya et al. | 2001
- 165
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Multibeam high-resolution UV wavelength reticle inspection (Best Paper Award) [4186-19]Hung, C. C. / Yoo, C. S. / Lin, C.-H. / Volk, W. W. / Wiley, J. N. / Khanna, S. / Biellak, S. / Wang, D. / SPIE et al. | 2001
- 165
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Multibeam high-resolution UV wavelength reticle inspectionHung, Chih-Chien / Yoo, Chue-San / Lin, Chia-Hui / Volk, William W. / Wiley, James N. / Khanna, Steve / Biellak, Steve / Wang, D. et al. | 2001
- 173
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In-process defect inspection and characterization study for dry etching chrome-on-quartz binary masks [4186-20]Cai, W. / Kamberian, H. / Mattis, D. G. / Morris, K. / Tu, V. / SPIE et al. | 2001
- 173
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In-process defect inspection and characterization study for dry etching chrome-on-quartz binary masksCai, Weidong / Kamberian, Henry H. / Mattis, Douglas G. / Morris, Kraig / Tu, Van et al. | 2001
- 183
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Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-mum design rule with binary OPC/SB mask [4186-21]Phan, K. A. / Spence, C. A. / Riddick, J. / Chen, J. X. / Lamantia, M. / Villa, H. A. / SPIE et al. | 2001
- 183
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Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-μm design rule with binary OPC/SB maskPhan, Khoi A. / Spence, Chris A. / Riddick, John / Chen, Jerry X. / Lamantia, Matt J. / Villa, Hugo A. et al. | 2001
- 198
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Practical defect-sizing issues for UV inspection of 248-nm embedded attenuated PSM contact layer [4186-22]Reynolds, J. A. / SPIE et al. | 2001
- 198
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Practical defect-sizing issues for UV inspection of 248-nm embedded attenuated PSM contact layerReynolds, James A. et al. | 2001
- 207
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Pellicle-induced distortions in advanced optical reticles [4186-23]Semke, W. H. / Siewert, L. K. / Mikkelson, A. R. / Risius, E. A. / Tang, N. / Engelstad, R. L. / Lovell, E. G. / Zheng, J.-F. / Dao, G. T. / SPIE et al. | 2001
- 207
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Pellicle-induced distortions in advanced optical reticlesSemke, William H. / Siewert, Lowell K. / Mikkelson, Andrew R. / Risius, Eric A. / Tang, Ning / Engelstad, Roxann L. / Lovell, Edward G. / Zheng, Jun-Fei / Dao, Giang T. et al. | 2001
- 217
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Reticle error correction for lithography tool qualification benefits and limitationsKiers, Ton / Mulder, Melchior / van Schoot, Jan B. / Waelpoel, Jacques A. / Uitz, Robert et al. | 2001
- 217
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Reticle error correction for lithography tool qualification benefits and limitations [4186-24]Kiers, T. / Mulder, M. / van Schoot, J. B. / Waelpoel, J. A. / Uitz, R. / SPIE et al. | 2001
- 227
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Analysis of photomask distortion caused by blank materials and open ratios [4186-25]Moon, S.-Y. / Ki, W.-T. / Yang, S.-H. / Jeong, T.-M. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 227
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Analysis of photomask distortion caused by blank materials and open ratiosMoon, Seong-Yong / Ki, Won-Tai / Yang, Seung-Hune / Jeong, Tae Moon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 233
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Innovations in lithography metrology for characterization of phase-shift mask materialsHarrison, Dale A. / Lam, John C. / Forouhi, A. Rahim et al. | 2001
- 233
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Innovations in lithography metrology for characterization of phase-shift mask materials [4186-26]Harrison, D. A. / Lam, J. C. / Forouhi, A. / SPIE et al. | 2001
- 241
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UV inspection of EUV and SCALPEL reticles [4186-27]Pettibone, D. W. / Bareket, N. / Liang, T. / Stivers, A. R. / Hector, S. D. / Mangat, P. J. S. / Resnick, D. J. / Lercel, M. J. / Lawliss, M. / Magg, C. et al. | 2001
- 241
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UV inspection of EUV and SCALPEL reticlesPettibone, Donald W. / Bareket, Noah / Liang, Ted / Stivers, Alan R. / Hector, Scott D. / Mangat, Pawitter J. S. / Resnick, Douglas J. / Lercel, Michael J. / Lawliss, Mark / Magg, Christopher et al. | 2001
- 250
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Ion projection lithography: new insights and results of this NGL technologyStruck, Thomas / Ehrmann, Albrecht / Kaesmaier, Rainer / Loeschner, Hans et al. | 2001
- 250
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Ion projection lithography: new insights and results of this NGL technology [4186-28]Struck, T. / Ehrmann, A. / Kaesmaier, R. / Loschner, H. / SPIE et al. | 2001
- 259
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157-nm lithography for 100-nm generation and beyond: progress and statusDao, Giang T. / Borodovsky, Yan A. et al. | 2001
- 259
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157-nm lithography for 100-nm generation and beyond: progress and status [4186-29]Dao, G. T. / Borodovsky, Y. A. / SPIE et al. | 2001
- 268
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Materials for an attenuated phase-shifting mask in 157-nm lithographyMatsuo, Takahiro / Onodera, Toshio / Itani, Toshiro / Morimoto, Hiroaki / Haraguchi, Takashi / Kanayama, Koichiro / Matsuo, Tadashi / Otaki, Masao et al. | 2001
- 268
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Materials for an attenuated phase-shifting mask in 157-nm lithography [4186-30]Matsuo, T. / Onodera, T. / Itani, T. / Morimoto, H. / Haraguchi, T. / Kanayama, K. / Otaki, M. / SPIE et al. | 2001
- 275
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Printing 0.13-mum contact holes using 193-nm attenuated phase-shifting masks [4186-31]Wang, C.-M. A. / Lin, S.-J. / Lin, C.-H. / Ku, Y.-C. / Yen, A. / SPIE et al. | 2001
- 275
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Printing 0.13-μm contact holes using 193-nm attenuated phase-shifting masksWang, Chun-Ming A. / Lin, Shy-Jay / Lin, Chia-Hui / Ku, Yao Ching / Yen, Anthony et al. | 2001
- 287
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KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning processKim, Juhwan / Kim, Sang-Chul / Kim, Hee-Chun / Lee, Sang-Lee / Choi, Yong-Kyoo / Ham, Young-Mog / Han, Oscar et al. | 2001
- 287
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KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process [4186-32]Kim, J. / Kim, S.-C. / Kim, H.-C. / Lee, S.-I. / Choi, Y.-K. / Ham, Y.-M. / Han, O. / SPIE et al. | 2001
- 297
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Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithographyIi, Toshihiro / Saga, Tadashi / Hattori, Yusuke / Ohshima, Takashi / Otaki, Masao / Iwakata, Masahide / Haraguchi, Takashi / Kanayama, Koichiro / Yamazaki, Tsukasa / Fukuhara, Nobuhiko et al. | 2001
- 297
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Realization of mass production for 130-nm node and future application for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography [4186-33]Ii, T. / Saga, T. / Hattori, Y. / Ohshima, T. / Otaki, M. / Iwakata, M. / Haraguchi, T. / Kanayama, K. / Yamazaki, T. / Fukuhara, N. et al. | 2001
- 309
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Effect of mask reduction ratio in alternating phase-shift masksShin, In-Gyun / Lee, Sung-Ho / Kim, Yong-Hoon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min / Lim, Tong-Kun et al. | 2001
- 309
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Effect of mask reduction ratio in alternating phase-shift masks [4186-34]Shin, I.-G. / Lee, S.-W. / Kim, Y.-H. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / Lim, T.-K. / SPIE et al. | 2001
- 316
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Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source [4186-35]Westerman, R. J. / Constantine, C. / Plumhoff, J. / Strawn, C. / SPIE et al. | 2001
- 316
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Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP sourceWesterman, Russell J. / Constantine, Chris / Plumhoff, Jason / Strawn, C. et al. | 2001
- 325
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Proximity effects in alternating aperture phase-shifting masks [4186-36]Pierrat, C. / SPIE et al. | 2001
- 325
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Proximity effects in alternating aperture phase-shifting masksPierrat, Christophe et al. | 2001
- 336
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Fabricating 0.10-mum line patterns using attenuated phase-shift masks [4186-37]Iwasaki, H. / SPIE et al. | 2001
- 336
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Fabricating 0.10-μm line patterns using attenuated phase-shift masksIwasaki, Haruo et al. | 2001
- 346
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Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography [4186-38]Koo, S.-S. / Kim, H.-B. / Yune, H.-S. / Hong, J.-S. / Paek, S.-W. / Eom, T.-S. / Ahn, C.-N. / Ham, Y.-M. / Baik, K.-H. / Lee, K.-Y. et al. | 2001
- 346
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Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithographyKoo, Sang-Sool / Kim, Hee-Bom / Yune, Hyoung-Soon / Hong, Jee-Suk / Paek, Seung-Weon / Eom, Tae-Seung / Ahn, Chang-Nam / Ham, Young-Mog / Baik, Ki-Ho / Lee, Kyu-Yong et al. | 2001
- 359
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Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithographyHam, Young-Mog / Kim, Seo-Min / Kim, Sang-Jin / Bae, Sang-Man / Kim, Young-Deuk / Baik, Ki-Ho et al. | 2001
- 359
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Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography [4186-39]Ham, Y.-M. / Kim, S.-M. / Kim, S.-J. / Bae, S.-M. / Kim, Y.-D. / Baik, K.-H. / SPIE et al. | 2001
- 372
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Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification [4186-40]Griesinger, U. A. / Mader, L. / Semmler, A. / Dettmann, W. / Noelscher, C. / Pforr, R. / SPIE et al. | 2001
- 372
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Balancing of alternating phase-shifting masks for practical application: modeling and experimental verificationGriesinger, Uwe A. / Mader, Leonhard / Semmler, Armin / Dettmann, Wolfgang / Noelscher, Christoph / Pforr, Rainer et al. | 2001
- 384
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High-performance devices in the new century: optical lithography and mask strategy for 0.13-mum SoC (Photomask Japan 2000 panel discussion review) [4186-41]Kawahira, H. / Nagano, V. / SPIE et al. | 2001
- 384
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High-performance devices in the new century: optical lithography and mask strategy for 0.13-μm SoC (Photomask Japan 2000 panel discussion review)Kawahira, Hiroichi / Nagano, Vic et al. | 2001
- 395
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Phase phirst! An improved strong-PSM paradigm [4186-42]Levenson, M. D. / Petersen, J. S. / Gerold, D. G. / Mack, C. A. / SPIE et al. | 2001
- 395
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Phase phirst! An improved strong-PSM paradigmLevenson, David / Petersen, John S. / Gerold, David J. / Mack, Chris A. et al. | 2001
- 405
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Modeling defect-feature interactions in the presence of aberrations [4186-43]Neureuther, A. R. / Hotta, S. / Adam, K. / SPIE et al. | 2001
- 405
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Modeling defect-feature interactions in the presence of aberrationsNeureuther, Andrew R. / Hotta, Shoji / Adam, Konstantinos et al. | 2001
- 415
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Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicleMiyazaki, Junji / Itani, Toshiro / Morimoto, Hiroaki et al. | 2001
- 415
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Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicle [4186-44]Miyazaki, J. / Itani, T. / Morimoto, H. / SPIE et al. | 2001
- 423
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Impact of alternating phase-shift mask quality on 100-nm gate lithographyYamamoto, Tomohiko / Ishiwata, Naoyuki / Asai, Satoru et al. | 2001
- 423
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Impact of alternating phase-shift mask quality on 100-nm gate lithography [4186-45]Yamamoto, T. / Ishiwata, N. / Asai, S. / SPIE et al. | 2001
- 433
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Technological challenges in implementation of alternating phase-shift mask [4186-46]Tsai, W. / Qian, Q. / Buckmann, K. M. / Cheng, W.-H. / He, L. / Irvine, B. / Kamna, M. / Korobko, Y. / Kovalchick, M. / Labovitz, S. M. et al. | 2001
- 433
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Technological challenges in implementation of alternating phase-shift maskTsai, Wilman / Qian, Qi-De / Buckmann, Ken M. / Cheng, Wen-Hao / He, Long / Irvine, Brian / Kamna, Marilyn / Korobko, Yulia O. / Kovalchick, Michael / Labovitz, Steven M. et al. | 2001
- 444
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Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturingHibbs, Michael S. / Ushida, Masao / Babich, Katherina / Mitsui, Hideaki / Bourov, Anatoly et al. | 2001
- 444
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Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing [4186-47]Hibbs, M. S. / Ushida, M. / Babich, K. / Mitsui, H. / Bourov, A. / SPIE et al. | 2001
- 452
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Emergence of assist feature OPC era in sub-130-nm DRAM devices [4186-48]Kim, B. / Kim, I. / Yeo, G. / Lee, J. / Choi, J. / Cho, H. / Moon, J. / SPIE et al. | 2001
- 452
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Emergence of assist feature OPC era in sub-130-nm DRAM devicesKim, Byeongsoo / Kim, Insung / Yeo, Gisung / Lee, Junghyun / Choi, Ji-Hyeon / Cho, Hanku / Moon, Joo-Tae et al. | 2001
- 460
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Eddy current evaluation for a high-resolution EB system [4186-49]Shimomura, N. / Ogasawara, M. / Hattori, K. / Takamatsu, J. / Sunaoshi, H. / Yoshitake, S. / Fukudome, Y. / Akeno, K. / SPIE et al. | 2001
- 460
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Eddy current evaluation for a high-resolution EB systemShimomura, Naoharu / Ogasawara, Munehiro / Hattori, Kiyoshi / Takamatsu, Jun / Sunaoshi, Hitoshi / Yoshitake, Shusuke / Fukudome, Yuuji / Akeno, Kiminobu et al. | 2001
- 468
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Effect of beam blur in mask fabrication [4186-50]Yang, S.-H. / Ki, W.-T. / Moon, S.-Y. / Jeong, T.-M. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 468
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Effect of beam blur in mask fabricationYang, Seung-Hune / Ki, Won-Tai / Moon, Seong-Yong / Jeong, Tae Moon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 474
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Integration of the Micronic Omega6500 into the mask manufacturing environmentBuck, Peter D. / Bjuggren, Mans / Buenning, Hartmut / Garg, Vishal / Larsson, Johan / Vikholm, Tomas et al. | 2001
- 474
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Integration of the Micronic Omega6500 into the mask manufacturing environment [4186-52]Buck, P. D. / Bjuggren, M. / Bunning, H. / Garg, V. / Larsson, J. / Vikholm, T. / SPIE et al. | 2001
- 482
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Localized resist heating due to electron-beam patterning during photomask fabrication [4186-53]Wei, A. C. / Beckman, W. A. / Engelstad, R. L. / Mitchell, J. W. / Phung, T. N. / Zheng, J.-F. / SPIE et al. | 2001
- 482
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Localized resist heating due to electron-beam patterning during photomask fabricationWei, Alexander C. / Beckman, William A. / Engelstad, Roxann L. / Mitchell, John W. / Phung, Thanh N. / Zheng, Jun-Fei et al. | 2001
- 494
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Management of pattern generation system based on i-line stepperKyoh, Suigen / Tanaka, Satoshi / Inoue, Soichi / Higashikawa, Iwao / Mori, Ichiro / Okumura, Katsuya / Irie, Nobuyuki / Muramatsu, Koji / Ishii, Yuuki / Magome, Nobutaka et al. | 2001
- 494
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Management of pattern generation system based on i-line stepper [4186-54]Kyoh, S. / Tanaka, S. / Inoue, S. / Higashikawa, I. / Mori, I. / Okumura, K. / Irie, N. / Muramatsu, K. / Ishii, Y. / Magome, N. et al. | 2001
- 503
-
Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software toolsKuzmin, Igor Y. / Mack, Chris A. et al. | 2001
- 503
-
Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software tools [4186-55]Kuzmin, I. Y. / Mack, C. A. / SPIE et al. | 2001
- 508
-
Improved process control of photomask fabrication in e-beam lithography [4186-56]Cha, B.-C. / Park, J.-H. / Choi, Y.-H. / Kim, J.-M. / Han, W.-S. / Yoon, H.-S. / Sohn, J.-M. / SPIE et al. | 2001
- 508
-
Improved process control of photomask fabrication in e-beam lithographyCha, Byung-Cheol / Park, Jin-Hong / Choi, Yo-Han / Kim, Jin-Min / Han, Woo-Sung / Yoon, Hee-Sun / Sohn, Jung-Min et al. | 2001
- 513
-
Investigations of CD variation in Cr dry etching processHanda, Hitoshi / Yamauchi, Satoshi / Hosono, Kouji / Shirai, Hisatsugu et al. | 2001
- 513
-
Investigations of CD variation in Cr dry etching process [4186-57]Handa, H. / Yamauchi, S. / Hosono, K. / Shirai, H. / SPIE et al. | 2001
- 522
-
Evaluation of photomask blanks layer parameters with an x-ray reflection method and photomask property distribution [4186-58]Hirano, T. / Hayashi, A. / Hino, Y. / Wada, H. / Otaki, M. / Matsuo, R. / SPIE et al. | 2001
- 522
-
Evaluation of photomask blank layer parameters with an x-ray reflection method and photomask property distributionHirano, Teruyoshi / Hayashi, Atsushi / Hino, Yoshihiro / Wada, Hiroshi / Otaki, Masao / Matsuo, Ryuji et al. | 2001
- 532
-
Dry etching technology of Cr and MoSi layers using high-density plasma source [4186-59]Kwon, H.-J. / Oh, K.-S. / Chang, B.-S. / Choi, B.-Y. / Park, K.-H. / Jeong, S.-H. / SPIE et al. | 2001
- 532
-
Dry etching technology of Cr and MoSi layers using high-density plasma sourceKwon, Hyuk-Joo / Oh, Kwang-Sik / Chang, Byung-Soo / Choi, Boo-Yeon / Park, Kyung-Ho / Jeong, Soo-Hong et al. | 2001
- 540
-
Develop process optimization for CD uniformity improvement [4186-60]Shin, J.-C. / Won, J.-I. / Jung, H.-Y. / Kim, M.-S. / Choi, Y.-K. / Han, O. / SPIE et al. | 2001
- 540
-
Develop process optimization for CD uniformity improvementShin, Jae-Cheon / Won, Joon-Il / Jung, Ho-Yong / Kim, Mun-Sik / Choi, Yong-Kyoo / Han, Oscar et al. | 2001
- 549
-
Evaluation of loading effect of NLD dry etching: IIFujisawa, Tatsuya / Iwamatsu, Takayuki / Hiruta, Koji / Morimoto, Hiroaki / Harashima, Noriyuki / Sasaki, Takaei / Hara, Mutsumi / Yamashiro, Kazuhide / Okubo, Yasushi / Takehana, Yoichi et al. | 2001
- 549
-
Evaluation of loading effect of NLD dry etching: II [4186-61]Fujisawa, T. / Iwamatsu, T. / Hiruta, K. / Morimoto, H. / Harashima, N. / Sasaki, T. / Hara, M. / Yamashiro, K. / Ohkubo, Y. / Takehana, Y. et al. | 2001
- 553
-
Laser resist screening for iP3500/3600 replacement for advanced reticle fabrication [4186-62]Ohta, F. / Kobayashi, H. / Higuchi, T. / Asakawa, K. / SPIE et al. | 2001
- 553
-
Laser resist screening for iP3500/3600 replacement for advanced reticle fabricationOta, Fumiko / Kobayashi, Hideo / Higuchi, Takao / Asakawa, Keishi et al. | 2001
- 561
-
CARs blanks feasibility study results for advanced EB reticle fabricationHashimoto, Masahiro / Kobayashi, Hideo / Yokoya, Yasunori et al. | 2001
- 561
-
CARs blanks feasibility study results for advanced EB reticle fabrication [4186-63]Hashimoto, M. / Kobayashi, H. / Yokoya, Y. / SPIE et al. | 2001
- 578
-
Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabricationRathsack, Benjamen M. / Tabery, Cyrus E. / Albelo, Jeff A. / Buck, Peter D. / Willson, C. Grant et al. | 2001
- 578
-
Characterization of an acetal-based chemically amplified resist for 257-nm laser mask fabrication [4186-64]Rathsack, B. M. / Tabery, C. E. / Albelo, J. A. / Buck, P. D. / Willson, C. G. / SPIE et al. | 2001
- 589
-
Effective data compaction algorithm for vector scan EB writing system [4186-65]Ueki, S. / Ashida, I. / Kawahira, H. / SPIE et al. | 2001
- 589
-
Effective data compaction algorithm for vector scan EB writing systemUeki, Shinichi / Ashida, Isao / Kawahira, Hiroichi et al. | 2001
- 601
-
Pushing SRAM densities beyond 0.13-mum technology in the year 2000 [4186-66]Bula, O. / Mih, R. D. / Jasinski, E. / Hoyniak, D. / Lu, A. / Harrington, J. / McGuire, A. E. / SPIE et al. | 2001
- 601
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Pushing SRAM densities beyond 0.13-μm technology in the year 2000Bula, Orest / Mih, Rebecca D. / Jasinski, Eric / Hoyniak, Dennis / Lu, Andrew / Harrington, Jay / McGuire, Anne E. et al. | 2001
- 612
-
Improvement of the efficiency of OPC data handling [4186-67]Toyama, N. / Ikemoto, T. / Ishida, K. / Miyashita, H. / SPIE et al. | 2001
- 612
-
Improvement of the efficiency of OPC data handlingToyama, Nobuhito / Ikemoto, Takayuki / Ishida, Kouji / Miyashita, Hiroyuki et al. | 2001
- 620
-
OPC reticle inspection techniquesDong, Aihua / Reese, Bryan W. et al. | 2001
- 620
-
OPC reticle inspection techniques [4186-68]Dong, A. / Reese, B. W. / SPIE et al. | 2001
- 630
-
Evaluation of a multiple-beam defect inspection platform using an integrated reference mask [4186-69]Chen, J. X. / Kalk, F. D. / Vacca, A. / Pomeroy, S. / Carroll, J. / SPIE et al. | 2001
- 630
-
Evaluation of a multiple-beam defect inspection platform using an integrated reference maskChen, Jerry X. / Kalk, Franklin D. / Vacca, Anthony / Pomeroy, Scott / Carroll, Jordan et al. | 2001
- 638
-
Soft defect printability: correlation to optical flux-area measurements [4186-71]Taylor, D. / Fiekowsky, P. / SPIE et al. | 2001
- 638
-
Soft defect printability: correlation to optical flux-area measurementsTaylor, Darren / Fiekowsky, Peter et al. | 2001
- 647
-
New approach to improve CD uniformity based on mask qualityLiebe, Roman / Jaehnert, Carmen / Gottlib, Gidon / Eran, Yair / Hemar, Shirley / Sade, Amikam / Rosenbusch, Anja et al. | 2001
- 647
-
New approach to improve CD uniformity based on mask quality [4186-100]Liebe, R. / Jaehnert, C. / Gottlib, G. / Eran, Y. / Hemar, S. / Sade, A. / Rosenbusch, A. / SPIE et al. | 2001
- 654
-
Investigating inspectability and printability of contamination deposited during SEM analysis [4186-101]Kasprowicz, B. S. / Ananth, M. / Wang, C.-Y. / SPIE et al. | 2001
- 654
-
Investigating inspectability and printability of contamination deposited during SEM analysisKasprowicz, Bryan S. / Ananth, Mohan / Wang, Chih-Yu et al. | 2001
- 663
-
High-accuracy laser mask repair system LM700AYoshino, Yoichi / Morishige, Yukio / Watanabe, Shuichi / Kyusho, Yukio / Ueda, Atsushi / Haneda, Tutomu / Ohmiya, Makoto et al. | 2001
- 663
-
High-accuracy laser mask repair system LM700A [4186-109]Yoshino, Y. / Morishige, Y. / Watanabe, S. / Kyusho, Y. / Ueda, A. / Haneda, T. / Oomiya, M. / SPIE et al. | 2001
- 670
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Subtractive defect repair via nanomachiningLaurance, Mark R. et al. | 2001
- 670
-
Subtractive defect repair via nanomachining [4186-111]Laurance, M. R. / SPIE et al. | 2001
- 674
-
Neolithography Consortium: a progress report [4186-73]Potzick, J. E. / SPIE et al. | 2001
- 674
-
Neolithography Consortium: a progress reportPotzick, James E. et al. | 2001
- 681
-
Automated atomic force metrology applications for alternating aperture phase-shift masksMiller, Kirk / Todd, Bradley et al. | 2001
- 681
-
Automated atomic force metrology applications for alternating aperture phase-shift masks [4186-110]Miller, K. / Todd, B. / SPIE et al. | 2001
- 688
-
Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopyWasson, James R. / Mangat, Pawitter J. S. / Slaughter, Jon M. / Hector, Scott D. / Bajt, Sasa / Kearney, Patrick A. et al. | 2001
- 688
-
Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopy [4186-75]Wasson, J. R. / Mangat, P. J. S. / Slaughter, J. M. / Hector, S. D. / Bajt, S. / Kearney, P. A. / SPIE et al. | 2001
- 697
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SCALPEL mask parametric study [4186-76]Dicks, G. A. / Engelstad, R. L. / Lovell, E. G. / Liddle, J. A. / SPIE et al. | 2001
- 697
-
SCALPEL mask parametric studyDicks, Gerald A. / Engelstad, Roxann L. / Lovell, Edward G. / Liddle, James A. et al. | 2001
- 707
-
Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabricationMagg, Christopher / Lercel, Michael J. / Lawliss, Mark / Kwong, Ranee W. / Huang, Wu-Song / Angelopoulos, Marie et al. | 2001
- 707
-
Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabrication [4186-77]Magg, C. / Lercel, M. J. / Lawliss, M. / Kwong, R. W. / Huang, W.-S. / Angelopoulos, M. / SPIE et al. | 2001
- 717
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Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiNxmembranesHan, Sang-In / Mangat, Pawitter J. S. / Dauksher, William J. / Chor, Michael / Liddle, James A. / Novembre, Anthony E. et al. | 2001
- 717
-
Fabrication process and transmission characteristics of SCALPEL mask blanks with thin SiN~x membranes [4186-78]Han, S.-I. / Mangat, P. J. S. / Dauksher, W. J. / Chor, M. / Liddle, J. A. / Novembre, A. E. / SPIE et al. | 2001
- 724
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Predicting thermomechanical distortions of optical reticles for 157-nm technologyAbdo, Amr Y. / Engelstad, Roxann L. / Beckman, William A. / Mitchell, John W. / Lovell, Edward G. et al. | 2001
- 724
-
Predicting thermomechanical distortions of optical reticles for 157-nm technology [4186-79]Abdo, A. Y. / Engelstad, R. L. / Beckman, W. A. / Mitchell, J. W. / Lovell, E. G. / SPIE et al. | 2001
- 733
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Predictive model of the cost of extreme-ultraviolet lithography masksHector, Scott D. / Kearney, Patrick A. / Montcalm, Claude / Folta, James A. / Walton, Christopher C. / Tong, William M. / Taylor, John S. / Yan, Pei-yang / Gwyn, Charles W. et al. | 2001
- 733
-
Predictive model of the cost of extreme-ultraviolet lithography masks [4186-80]Hector, S. D. / Kearney, P. A. / Montcalm, C. / Folta, J. A. / Walton, C. C. / Tong, W. M. / Taylor, J. S. / Yan, P.-Y. / Gwyn, C. / SPIE et al. | 2001
- 749
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Dry etching of Ta absorber for EUVL masksHoshino, Eiichi / Ogawa, Taro / Hirano, Naoya / Hoko, Hiromasa / Takahashi, Masashi / Yamanashi, Hiromasa / Chiba, Akira / Ito, Masaaki / Okazaki, Shinji et al. | 2001
- 749
-
Dry etching of Ta absorber for EUVL masks [4186-81]Hoshino, E. / Ogawa, T. / Hirano, N. / Hoko, H. / Takahashi, M. / Yamanashi, H. / Chiba, A. / Ito, M. / Okazaki, S. / SPIE et al. | 2001
- 756
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157-nm photomask handling and infrastructure: requirements and feasibilityCullins, Jerry / Muzio, Edward G. et al. | 2001
- 756
-
157-nm photomask handling and infrastructure: requirements and feasibility [4186-82]Cullins, J. / Muzio, E. G. / SPIE et al. | 2001
- 762
-
Is it time to change mask magnification? [4186-83]Shelden, G. V. / SPIE et al. | 2001
- 762
-
Is it time to change mask magnification?Shelden, Gilbert V. et al. | 2001
- 767
-
Impact of surface contamination on transmittance of modified fused silica for 157-nm lithography applicationZheng, Jun-Fei / Kuse, Ronald / Ramamoorthy, Arun / Dao, Giang T. / Lo, Fu-Chang et al. | 2001
- 767
-
Impact of surface contamination on transmittance of modified fused silica for 157-nm lithography application [4186-84]Zheng, J.-F. / Kuse, R. / Ramamoorthy, A. / Dao, G. T. / Lo, F.-C. / SPIE et al. | 2001
- 774
-
Cr absorber mask for extreme-ultraviolet lithography [4186-102]Zhang, G. / Yan, P.-Y. / Liang, T. / SPIE et al. | 2001
- 774
-
Cr absorber mask for extreme-ultraviolet lithographyZhang, Guojing / Yan, Pei-yang / Liang, Ted et al. | 2001
- 781
-
Defect printability modeling of smoothed substrate defects for EUV lithography [4186-103]Ray-Chaudhuri, A. K. / Fisher, A. C. / Gullikson, E. M. / SPIE et al. | 2001
- 781
-
Defect printability modeling of smoothed substrate defects for EUV lithographyRay-Chaudhuri, Avijit K. / Fisher, Aaron / Gullikson, Eric M. et al. | 2001
- 787
-
Double-step process for manufacturing reticle to reduce gate CD variationKozuma, Makoto / Komatsu, Masaya / Arakawa, Rieko / Kubo, Seiji / Takahashi, Tatsuya / Jensen, John / Bang, Hyun-Suk / Lee, Il-Ho / Shin, Cheol / Kim, Hong-Seok et al. | 2001
- 787
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Double-step process for manufacturing reticle to reduce gate CD variation [4186-85]Kozuma, M. / Komatsu, M. / Arakawa, R. / Kubo, S. / Takahashi, T. / Jensen, J. / Bang, H. S. / Lee, I. H. / Shin, C. / Kim, H.-S. et al. | 2001
- 793
-
Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correctionNam, Byung-Ho / Kim, Dong-Seok / Cho, Byung-Jin / Seok, Nam-Ki / Jeong, Jae K. / Kim, Sang-Pye / Kang, Sang-Woo / Hwang, Young J. / Song, Young Jin et al. | 2001
- 793
-
Comparison study between stepper (5x) and scanner (4x) for gate CD control using total process-proximity-based correction [4186-86]Nam, B. H. / Kim, D. S. / Cho, B. H. / Seok, N. K. / Jeong, J. K. / Kim, S. P. / Kang, S. W. / Hwang, Y. J. / Song, Y. J. / SPIE et al. | 2001
- 801
-
Development of simplified process for KrF excimer halftone mask with chrome-shielding method: II [4186-87]Kobayashi, S. / Watanabe, K. / Ohmori, K. / SPIE et al. | 2001
- 801
-
Development of simplified process for KrF excimer halftone mask with chrome-shielding method: IIKobayashi, Shinji / Watanabe, Kunio / Ohmori, Kiyochige et al. | 2001
- 810
-
Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanks [4186-88]Dieu, L. / Carcia, P. F. / Mitsui, H. / Ueno, K. / SPIE et al. | 2001
- 810
-
Ion-beam sputter-deposited SiN/TiN attenuating phase-shift photoblanksDieu, Laurent / Carcia, Peter F. / Mitsui, Hideaki / Ueno, Kunihiko et al. | 2001
- 818
-
Tritone inspection for embedded phase-shift mask [4186-89]Cheng, W.-H. / Farnsworth, J. N. / Tenjil, E. / SPIE et al. | 2001
- 818
-
Tritone inspection for embedded phase-shift maskCheng, Wen-Hao / Farnsworth, Jeff N. / Tejnil, Edita et al. | 2001
- 827
-
Effects of shifter edge topography on through focus performance [4186-90]Hotta, S. / Pistor, T. V. / Adam, K. / Neureuther, A. R. / SPIE et al. | 2001
- 827
-
Effects of shifter edge topography on through focus performanceHotta, Shoji / Pistor, Thomas V. / Adam, Konstantinos / Neureuther, Andrew R. et al. | 2001
- 838
-
Development of photomask fabrication for 100-nm design ruleInoue, Takashi / Horibe, Takuro / Maeda, Akihiro / Tanaka, Yoshiyuki et al. | 2001
- 838
-
Development of photomask fabrication for 100-nm design rule [4186-92]Inoue, T. / Horibe, T. / Maeda, A. / Tanaka, Y. / SPIE et al. | 2001
- 846
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Development of a MoSi-based bilayer HT-PSM blank for ArF lithographyKanai, Shuichiro / Kawada, Susumu / Isao, Akihiko / Sasaki, Takaei / Maetoko, Kazuyuki / Yoshioka, Nobuyuki et al. | 2001
- 846
-
Development of a MoSi-based bilayer HT-PSM blank for ArF lithography [4186-93]Kanai, S. / Kawada, S. / Isao, A. / Sasaki, T. / Maetoko, K. / Yoshioka, N. / SPIE et al. | 2001
- 853
-
CD variation analysis technique and its application to the study of PSM mask misalignmentGranik, Yuri / Cobb, Nicolas B. / Sahouria, Emile Y. et al. | 2001
- 853
-
CD variation analysis technique and its application to the study of PSM mask misalignment [4186-94]Granik, Y. / Cobb, N. B. / Sahouria, E. Y. / SPIE et al. | 2001
- 862
-
Phase and transmission errors aware OPC solution for PSM: feasability demonstrationToublan, Olivier / Sahouria, Emile Y. / Cobb, Nicolas B. et al. | 2001
- 862
-
Phase and transmission errors aware OPC solution for PSM: feasability demonstration [4186-95]Toublan, O. / Sahouria, E. Y. / Cobb, N. B. / SPIE et al. | 2001
- 869
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High-optical-density photomasks for large exposure applications [4186-96]Schurz, D. L. / Flack, W. W. / Nakamura, M. / SPIE et al. | 2001
- 869
-
High-optical-density photomasks for large exposure applicationsSchurz, Dan L. / Flack, Warren W. / Nakamura, Makoto et al. | 2001
- 881
-
Defect dispositioning using mask printability on attenuated phase-shift production photomasksNovak, Justin W. / Eynon, Benjamin G. / Poortinga, Eric / Rosenbusch, Anja / Eran, Yair et al. | 2001
- 881
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Defect dispositioning using mask printability on attenuated phase-shift production photomasks [4186-97]Novak, J. W. / Eynon, B. G. / Poortinga, E. / Rosenbusch, A. / Eran, Y. / SPIE et al. | 2001
- 890
-
Establishment of production process and assurance method for alternating phase-shift masks (Best Poster Paper Award) [4186-98]Murai, S. M. / Koizumi, Y. / Kamibayashi, T. / Saitou, H. / Hoga, M. / Morikawa, Y. / Miyashita, H. / SPIE et al. | 2001
- 890
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Establishment of production process and assurance method for alternating phase-shift masksMurai, Shiaki M. / Koizumi, Yasuhiro / Kamibayashi, Tatsuhiko / Saitou, Hidetaka / Hoga, Morihisa / Morikawa, Yasutaka / Miyashita, Hiroyuki et al. | 2001
- 902
-
Mask manufacturing contribution on 248-nm and 193-nm lithography performancesBarberet, Alexandra / Fanget, Gilles L. / Richoilley, Jean-Charles / Tissier, Michel / Quere, Yves et al. | 2001
- 902
-
Mask manufacturing contribution on 248-nm and 193-nm lithography performances [4186-104]Barberet, A. / Fanget, G. L. / Richoilley, J.-C. / Tissier, M. / Quere, Y. / SPIE et al. | 2001
- 911
-
Minimization of mask transmission asymmetry effect for chromeless phase-shift masksChan, David Y. / Novak, Justin W. / Fritze, Michael et al. | 2001
- 911
-
Minimization of mask transmission asymmetry effect for chromeless phase-shift masks [4186-105]Chan, D. / Novak, J. W. / Fritze, M. / SPIE et al. | 2001
- 921
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Dual-mask model-based proximity correction for high-performance 0.10-μm CMOS processPalmer, Shane R. / Mason, Mark E. / Randall, John N. / Aton, Tom / Kim, Keeho / Tritchkov, Alexander V. / Burdorf, James / Rieger, Michael L. / Stirniman, John P. et al. | 2001
- 921
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Dual-mask model-based proximity correction for high-performance 0.10-mum CMOS process [4186-107]Palmer, S. R. / Mason, M. E. / Randall, J. N. / Aton, T. / Kim, K. / Tritchkov, A. V. / Burdorf, J. / Rieger, M. L. / Stirniman, J. P. / SPIE et al. | 2001