InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy (English)
- New search for: Murtagh, M.
- New search for: Beechinor, J. T.
- New search for: Cordero, N.
- New search for: Kelly, P. V.
- New search for: Crean, G. M.
- New search for: Bland, S. W.
- New search for: Murtagh, M.
- New search for: Beechinor, J. T.
- New search for: Cordero, N.
- New search for: Kelly, P. V.
- New search for: Crean, G. M.
- New search for: Bland, S. W.
- New search for: Rezazadeh, A. A.
- New search for: Swanson, J. G.
In:
Expert evaluation and control of semiconductor materials and technologies
1-3
;
185-188
;
1999
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ISSN:
- Conference paper / Print
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Title:InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy
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Contributors:Murtagh, M. ( author ) / Beechinor, J. T. ( author ) / Cordero, N. ( author ) / Kelly, P. V. ( author ) / Crean, G. M. ( author ) / Bland, S. W. ( author ) / Rezazadeh, A. A. / Swanson, J. G.
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Conference:International workshop; 4th, Expert evaluation and control of semiconductor materials and technologies ; 1998 ; Cardiff
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Published in:MATERIALS SCIENCE AND ENGINEERING B ; 66, 1-3 ; 185-188
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Publisher:
- New search for: Elsevier
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Publication date:1999-01-01
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Size:4 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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