Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy (English)
- New search for: Sanchez, A. M.
- New search for: Pacheco, F. J.
- New search for: Molina, S. I.
- New search for: Stemmer, J.
- New search for: Aderhold, J.
- New search for: Graul, J.
- New search for: Sanchez, A. M.
- New search for: Pacheco, F. J.
- New search for: Molina, S. I.
- New search for: Stemmer, J.
- New search for: Aderhold, J.
- New search for: Graul, J.
- New search for: Panayotatos, P.
- New search for: Zekentes, K.
In:
Expert evaluation and control of compound semiconductor materials and technologies
1-3
;
299-303
;
2001
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ISSN:
- Conference paper / Print
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Title:Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
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Contributors:Sanchez, A. M. ( author ) / Pacheco, F. J. ( author ) / Molina, S. I. ( author ) / Stemmer, J. ( author ) / Aderhold, J. ( author ) / Graul, J. ( author ) / Panayotatos, P. / Zekentes, K.
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Conference:International workshop; 5th, Expert evaluation and control of compound semiconductor materials and technologies ; 2000 ; Heraklion, Greece
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Published in:MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 80, 1-3 ; 299-303
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Publisher:
- New search for: Elsevier
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Publication date:2001-01-01
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Size:5 pages
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Remarks:Also known as EXMATEC 2000
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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