Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition (English)
- New search for: Pons, M.
- New search for: Meziere, J.
- New search for: Dedulle, J. M.
- New search for: Kuan, S. W. T.
- New search for: Blanquet, E.
- New search for: Bernard, C.
- New search for: Ferret, P.
- New search for: Di Cioccio, L.
- New search for: Billon, T.
- New search for: Madar, R.
- New search for: Pons, M.
- New search for: Meziere, J.
- New search for: Dedulle, J. M.
- New search for: Kuan, S. W. T.
- New search for: Blanquet, E.
- New search for: Bernard, C.
- New search for: Ferret, P.
- New search for: Di Cioccio, L.
- New search for: Billon, T.
- New search for: Madar, R.
- New search for: Davazoglou, D.
- New search for: Vahlas, C.
In:
Chemical vapour deposition
;
Pr3-1079-1086
;
2001
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
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Contributors:Pons, M. ( author ) / Meziere, J. ( author ) / Dedulle, J. M. ( author ) / Kuan, S. W. T. ( author ) / Blanquet, E. ( author ) / Bernard, C. ( author ) / Ferret, P. ( author ) / Di Cioccio, L. ( author ) / Billon, T. ( author ) / Madar, R. ( author )
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Conference:European conference; 13th, Chemical vapour deposition ; 2001 ; Athens
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Published in:Chemical vapour deposition ; Pr3-1079-1086JOURNAL DE PHYSIQUE 4 ; 11 ; Pr3-1079-1086
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Publisher:
- New search for: EDP Sciences
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Place of publication:Les Ulis
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Publication date:2001-01-01
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Size:Pr3-1079-1086
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Remarks:Also known as EUROCVD 13
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Molecular ways to nanoscale particles and filmsShen, H. / Mathur, S. et al. | 2001
- 9
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Real time monitoring of the growth of metallic thin films by in situ pyrometryGasqueres, C. / Maury, F. / Ossola, F. et al. | 2001
- 17
-
Preliminary studies of atmospheric pressure plasma enhanced CVD (AP-PECVD) of thin oxide filmsMcSporran, N. / Hitchman, M. L. / Alexandrov, S. E. / Shamlian, S. H. / Turnbull, S. / Tuema, F. et al. | 2001
- 25
-
Reflectance anisotropy studies of the oxidation of (001) GaAs surfaces in an MOCVD reactorSimcock, M. N. / He, L. / Pemble, M. E. et al. | 2001
- 29
-
Controlled-growth of platinum nanoparticles on carbon nanotubes or nanospheres by MOCVD in fluidized bed reactorSerp, P. / Feurer, R. / Kihn, Y. / Kalck, P. / Faria, J. L. / Figueiredo, J. L. et al. | 2001
- 37
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Atmospheric pressure chemical vapour deposition of BPSG films from TEOS, O~3, TMB, TMP~i: Determination of a chemical mechanismNieto, J.-P. / Caussat, B. / Couderc, J.-P. / Orain, I. / Jeannerot, L. et al. | 2001
- 45
-
Design, synthesis, and application of new Ti precursors compatible with Ba and Sr precursors for BST thin film by MOCVDWoo, K. et al. | 2001
- 51
-
Simulation and validation of SiO~2 LPCVD from TEOS in a vertical 300 mm multi-wafer reactorSchoof, G. J. / Kleijn, C. R. / Van Den Akker, H. E. A. / Oosterlaken, T. G. M. / Terhorst, H. J. C. M. / Huussen, F. et al. | 2001
- 63
-
Advances in the use of MOCVD methods for the production of novel photonic bandgap materialsWhitehead, D. E. / Pemble, M. E. / Yates, H. M. / Blanco, A. / Lopez, C. / Miguez, H. / Meseguer, F. J. et al. | 2001
- 69
-
Evaluation of corrosion behaviour of tantalum coating obtained by low pressure chemical vapor deposition using electrochemical polarizationLevesque, A. / Bouteville, A. / de Baynast, H. / Laveissiere, B. et al. | 2001
- 75
-
Molecular beam mass spectrometry analysis of gaseous species responsible for diamond deposition in microwave plasmasAubry, O. / Delfau, J.-L. / Met, C. / De Barros, M. I. / Vandenbulcke, L. / Vovelle, C. et al. | 2001
- 85
-
A study by GC-MS of the decomposition of precursors for the MOCVD of high temperature superconductorsLopaeva, O. V. / Hitchman, M. L. / Shamlian, S. H. / Watson, D. R. et al. | 2001
- 93
-
Growth of carbon nanotubes by fluidized bed catalytic chemical vapor depositionVenegoni, D. / Serp, P. / Feurer, R. / Kihn, Y. / Vahlas, C. / Kalck, P. et al. | 2001
- 99
-
Vapor-phase synthesis and characterization of ZnSe nanoparticlesSarigiannis, D. / Pawlowski, R. P. / Peck, J. D. / Mountziaris, T. J. / Kioseoglou, G. / Petrou, A. et al. | 2001
- 107
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Modification of multiwalled carbon nanotubes by different breaking processesVesselenyi, I. / Siska, A. / Mehn, D. / Niesz, K. / Konya, Z. / Nagy, J. B. / Kiricsi, I. et al. | 2001
- 113
-
Unveiling the magic of H~2S on the CVD-Al~2O~3 coating. Effect of H~2S on the water gas concentrationOshika, T. / Sato, M. / Nishiyama, A. et al. | 2001
- 121
-
Multi-model hierarchy approach to simulate barrel reactors for epitaxial silicon depositionDi Stanislao, M. / Valente, G. / Fascella, S. / Spampinato, C. / Masi, M. / Carra, S. et al. | 2001
- 129
-
Hydrogen storage in carbon nanotubes produced by CVDFonseca, A. / Pierard, N. / Tollis, S. / Bister, G. / Konya, Z. / Nagaraju, N. / Nagy, J. B. et al. | 2001
- 139
-
MOCVD of aluminium oxide films using aluminium beta-diketonates as precursorsDevi, A. / Shivashankar, S. A. / Samuelson, A. G. et al. | 2001
- 147
-
Conductive Cu-TiO~2 thin films obtained via MOCVDy Quintavalle, F. A. / Battiston, G. A. / Casellato, U. / Fregona, D. / Gerbasi, R. / Loro, F. et al. | 2001
- 155
-
Characterization of amorphous SiC:H thin films grown by RF plasma enhanced CVD on annealing temperaturePark, M. G. / Choi, W. S. / Boo, J.-H. / Kim, Y. T. / Yoon, D. H. / Hong, B. et al. | 2001
- Pr3
-
Thermodynamic, kinetic and mass transport calculations, as the basis for materials processing by CVDBernard, C. et al. | 2001
- Pr3
-
A study of morphology and texture of LPCVD germanium-silicon filmsKovalgin, A. / Holleman, J. et al. | 2001
- Pr3
-
Elementary steps and application of the CVD of SiC/BN double layersHemeltjen, S. / Heinrich, J. / Marx, G. / Dietrich, D. / Nestler, K. / Weise, K. / Stockel, S. et al. | 2001
- Pr3
-
Kinetics of the initial stages of film formation during low pressure chemical vapour deposition of polysilicon by pyrolysis of silaneZambov, L. / Caussat, B. / Boubeker, R. / Couderc, J.-P. et al. | 2001
- Pr3
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Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixturesVamvakas, V. E. / Berjoan, R. / Schamm, S. / Davazoglou, D. / Vahlas, C. et al. | 2001
- Pr3
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Photodegradative properties of TiO~2 films prepared by MOCVDJusticia, I. / Ayllon, J. A. / Figueras, A. / Battiston, G. A. / Gerbasi, R. et al. | 2001
- Pr3
-
Carbon nanotubes by CVD and applicationsCassell, A. / Delzeit, L. / Nguyen, C. / Stevens, R. / Han, J. / Meyyappan, M. et al. | 2001
- Pr3
-
MOCVD of rhenium-containing complex oxides with the new thd-precursorGorbenko, O. Y. / Trovanov, S. I. / Zakharov, A. A. / Bosak, A. A. et al. | 2001
- Pr3
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Volatility studies on single source precursors for LaNiO~3 film deposition: Mass spectrometry and thermal analysisKuzmina, N. / Malkerova, I. / Ryazanov, M. / Alikhanyan, A. / Rogachev, A. / Gleizes, A. N. et al. | 2001
- Pr3
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Photon assisted CVDPiglmayer, K. / Boman, M. / Lindstam, M. / Chabicovsky, R. et al. | 2001
- Pr3
-
Remote hydrogen plasma chemical vapor deposition from alkylsilane and alkylcarbosilane single-sources: Mechanism of the process and properties of resulting silicon-carbon depositsWrobel, A. M. et al. | 2001
- Pr3
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Plasma enhanced decomposition of propylene on activated carbon fibersOrfanoudaki, T. / Dolios, I. / Korili, S. / Samaras, P. / Platakis, N. / Sakellaropoulos, G. P. et al. | 2001
- Pr3
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Effects of plasma power and deposition pressure on the properties of the low dielectric constant plasma polymerized cyclohexane thin films deposited by plasma enhanced chemical vapor depositionShim, C. / Yang, J. / Quan, Y. C. / Choi, J. / Jung, D. et al. | 2001
- Pr3
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Fiber-coatings for fiber-reinforced mullite/mullite compositesNubian, K. / Wahl, G. / Saruhan, B. / Schneider, H. et al. | 2001
- Pr3
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High-performance In~0~.~4~9Ga~0~.~5~1P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors (delta-PHEMT's)Liu, W.-C. / Lin, K.-W. / Yu, K.-H. / Chang, W.-L. / Cheng, C.-C. / Wang, C.-K. / Chang, H.-M. et al. | 2001
- Pr3
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A systematic study of MOCVD grown InP/InGaAlAs heterojunction bipolar transistors with anomalous switching behaviorLiu, W.-C. / Wang, W.-C. / Yen, C.-H. / Cheng, C.-C. / Wu, C.-Z. / Chiou, W.-H. / Chuen, C.-Y. et al. | 2001
- Pr3
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Characterization and stressing properties of polysilicon TFTs utilizing oxide films deposited using TEOSKouvatsos, D. N. / Vamvakas, V. E. / Davazoglou, D. et al. | 2001
- Pr3
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Deposition of SrRuO~3 films and SrRuO~3/YBa~2Cu~3O~7 heterostructures by pulsed injection MOCVDAbrutis, A. / Plausinaitiene, V. / Pasko, S. / Teiserskis, A. / Kubilius, V. / Saltyte, Z. / Senateur, J.-P. et al. | 2001
- Pr3
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MOCVD of lead-containing perovskitesBosak, A. A. / Botev, A. N. / Gorbenko, O. Y. / Graboy, I. E. / Samoilenkov, S. V. / Kaul, A. R. / Dubourdieu, C. / Senateur, J.-P. et al. | 2001
- Pr3
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Structural and morphological changes in low temperature annealed LPCVD Si layersCobianu, B. / Modreanu, M. / Danila, M. / Gavrila, R. / Bercu, M. / Gartner, M. et al. | 2001
- Pr3
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Investigation of composition, optical and electrophysical properties of tin dioxide films made by oxidative pyrolysis of tetraethyltinKozyrkin, B. et al. | 2001
- Pr3
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GeO~2 and SiO~2 thin film preparation with CVD using ultraviolet excimer lampsKurosawa, K. / Maezono, Y. / Miyano, J.-I. / Motoyama, T. / Yokotani, A. et al. | 2001
- Pr3
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Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structureChen, G. C. / Kim, M. C. / Kim, T. H. / Lee, S.-B. / Boo, J.-H. et al. | 2001
- Pr3
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Investigation of the tantalum chlorination with hydrogen chloride for LPCVD tantalum elaborationLevesque, A. / Bouteville, A. et al. | 2001
- Pr3
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Development of SiN~x LPCVD processes for microtechnological applicationsRousset, B. / Furgal, L. / Fadel, P. / Fulop, A. / Pujos, D. / Temple-Boyer, P. et al. | 2001
- Pr3
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Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour depositionZambov, L. M. / Ivanov, B. / Popov, C. / Georgiev, G. / Stoyanov, I. / Dimitrov, D. B. et al. | 2001
- Pr3
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Single source MOCVD system for deposition of superconducting films onto moved tapesStadel, O. / Schmidt, J. / Markov, N. V. / Samoilenkov, S. V. / Wahl, G. / Jimenez, C. / Weiss, F. / Selbmann, D. / Eickemeyer, J. / Gorbenko, O. Y. et al. | 2001
- Pr3
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Thermodynamic and experimental study of low temperature ZrB~2 chemical vapor depositionPierson, J. F. / Belmonte, T. / Michel, H. et al. | 2001
- Pr3
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Multiscale approach to material synthesis by gas phase depositionMasi, M. et al. | 2001
- Pr3
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An extended interpretation of chemical vapor infiltration of carbonHu, Z. J. / Zhang, W. G. / Huttinger, K. J. et al. | 2001
- Pr3
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Nanoscale cobalt oxides thin films obtained by CVD and sol-gel routesArmelao, L. / Barreca, D. / Gross, S. / Tondello, E. et al. | 2001
- Pr3
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Formation of cubic SiC nanocrystals by laser-assisted CVDKamlag, Y. / Goossens, A. / Colbeck, I. / Schoonman, J. et al. | 2001
- Pr3
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Advances in copper CVD for the semiconductor industryNorman, J. A. T. et al. | 2001
- Pr3
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Growth of galliumnitride on sapphire and silicon using propylamine as nitrogen precursorAtakan, B. / Liu, Z.-J. et al. | 2001
- Pr3
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Al~2O~3 growth optimisation using aluminium dimethylisopropoxide as precursor as a function of reaction conditions and reacting gasesBarreca, D. / Battiston, G. A. / Carta, G. / Gerbasi, R. / Rossetto, G. / Tondello, E. / Zanella, P. et al. | 2001
- Pr3
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Microwave plasma enhanced CVD of aluminum oxide films: Influence of the deposition parameter on the films characteristicsHidalgo, H. / Tristant, P. / Denoirjean, A. / Desmaison, J. et al. | 2001
- Pr3
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Yttrium containing aluminide layersMetz, C. / Wahl, G. / Bianchi, P. / Innocenti, M. / Baxter, D. / Archer, N. / Wing, R. et al. | 2001
- Pr3
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Wear behavior of PACVD tin coatings deposited onto tool steelsStoiber, M. / Fontalvo, G. / Panzenbock, M. / Mitterer, C. / Lugmair, C. / Kullmer, R. et al. | 2001
- Pr3
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Structure and composition investigation of RPECVD SiCN and LPCVD BCN filmsKosinova, M. L. / Fainer, N. I. / Rumyantsev, Y. M. / Terauchi, M. / Shibata, K. / Satoh, F. / Tanaka, M. / Kuznetsov, F. A. et al. | 2001
- Pr3
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Reactive pack-cementation coating of silicon carbide on carbon-carbon compositePaccaud, O. / Derre, A. et al. | 2001
- Pr3
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Computational analysis of horizontal cold wall CVD reactors at low pressure: Application to tungsten deposition from pyrolysis of W(CO)~6Xenidou, T. C. / Koukou, M. K. / Boudouvis, A. G. / Markatos, N. C. et al. | 2001
- Pr3
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RMPECVD of silica films with a high microwave power (1600 W) parametric studiesTristant, P. / Desmaison, J. / Naudin, F. / Merle, D. et al. | 2001
- Pr3
-
Synthesis of hexagonal boron nitride thin films by a plasma assisted chemical vapor deposition methodThevenin, P. / Soltani, A. / Bath, A. et al. | 2001
- Pr3
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Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor depositionOda, S. / Nishiguchi, K. et al. | 2001
- Pr3
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Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor depositionPons, M. / Meziere, J. / Dedulle, J. M. / Kuan, S. W. T. / Blanquet, E. / Bernard, C. / Ferret, P. / Di Cioccio, L. / Billon, T. / Madar, R. et al. | 2001
- Pr3
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Transition and rare earth metal fluorides as thermal sources of atomic and molecular fluorineRau, J. V. / Chilingarov, N. S. / Leskiv, M. S. / Sukhoverkhov, V. F. / Albertini, V. R. / Sidorov, L. N. et al. | 2001
- Pr3
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Kinetics of LPCVD of gallium nitride and oxynitride films based on pyrolysis of a gallium chloride complex with ammonia GaCl~3 NH~3Alexandrov, S. E. / Kriakin, V. A. et al. | 2001
- Pr3
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Molecular magnets and conductors on surfacesCasellas, H. / de Caro, D. / Valade, L. / Aries, L. et al. | 2001
- Pr3
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Epitaxial growth of heavily P-doped Si films at 450^oC by alternately supplied PH~3 and SiH~4Shimamune, Y. / Sakuraba, M. / Matsuura, T. / Murota, J. et al. | 2001
- Pr3
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Gas-phase stability of c-BN clustersLarsson, K. et al. | 2001
- Pr3
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Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursorsParala, H. / Devi, A. / Rogge, W. / Birkner, A. / Fischer, R. A. et al. | 2001
- Pr3
-
Fundamental studies on the decomposition mechanism of Ti(OC~3H~7)~4 and TiO~2 film evolution on Si(100) and Pt(100) surfacesCho, S.-I. / Moon, S. H. / Chung, C.-H. et al. | 2001
- Pr3
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CVD copper thin film deposition using (alpha-methylstyrene)Cu(I)(hfac)Zhuang, W. / Charneski, L. J. / Evans, D. R. / Hsu, S. T. / Tang, Z. / Guloy, A. M. et al. | 2001
- Pr3
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Thermal barrier coatingsWahl, G. / Metz, C. / Samoilenkov, S. et al. | 2001
- Pr3
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Low frequency PACVD of silicon-carbon alloys: Process studyThomas, L. / Badie, J. M. / Tomasella, E. / Ducarroir, M. / Berjoan, R. et al. | 2001
- Pr3
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Advances in chemically vapour deposited wear resistant coatingsRuppi, S. et al. | 2001
- Pr3
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In situ characterization of atomic layer deposition of SrTiO~3Rahtu, A. / Hanninen, T. / Ritala, M. et al. | 2001
- Pr3
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Deposition process of laminar pyrocarbon from propaneLavenac, J. / Langlais, F. / Bourrat, X. / Naslain, R. et al. | 2001
- Pr3
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Group-III nitride growth in production scale MOVPE systemsSchineller, B. / Protzmann, H. / Luenenbuerger, M. / Heuken, M. / Lutsenko, E. V. / Yablonskii, G. P. et al. | 2001
- Pr3
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The development of MOCVD techniques for ferroelectric and dielectric thin film depositionsLi, T. / Hsu, S. T. et al. | 2001
- Pr3
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CVD modifications of porous Vycor silica for gas separation and sensor applicationsMagoulianti, E. / Beltsios, K. / Davazoglou, D. / Kanellopoulos, N. et al. | 2001
- Pr3
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Heat and mass transfer during producing silicon layers by chloride LPCVD processMinkina, V. G. et al. | 2001
- Pr3
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Structural properties of [(La~0~.~7Sr~0~.~3MnO~3/SrTiO~3)]~1~5 superlattices prepared by pulsed injection-MOCVDRosina, M. / Dubourdieu, C. / Weiss, F. / Senateur, J. P. / Frohlich, K. et al. | 2001
- Pr3
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Vapor pressure of precursors for CVD on the base of platinum group metalsMorozova, N. B. / Zharkova, G. I. / Semyannikov, P. P. / Sysoev, S. V. / Igumenov, I. K. / Fedotova, N. E. / Gelfond, N. V. et al. | 2001
- Pr3
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Characterization of a solvant-free vapour source for MOCVDJimenez, C. / Guillon, H. / Pierret, B. / Stadel, O. / Schmidt, J. / Krause, U. / Wahl, G. et al. | 2001
- Pr3
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Comparative study of atomic layer deposition and low-pressure MOCVD of copper sulfide thin filmsMeester, B. / Reijnen, L. / Goossens, A. / Schoonman, J. et al. | 2001
- Pr3
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The role of atomic surface structure in the metalorganic chemical vapor deposition of III-V compound semiconductorsHicks, R. F. / Fu, Q. / Li, L. / Visbeck, S. B. / Sun, Y. / Li, C. H. / Law, D. C. et al. | 2001
- Pr3
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Influence of hydrogen on chemical beam epitaxy of GaAs using triethylgallium and diethylarsineMaury, F. / Bedel-Pereira, E. et al. | 2001
- Pr3
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Processing of (PyC/TiC)~n multilayered coatings by pulsed CVD and RCVDRapaud, O. / Vincent, H. / Vincent, C. / Jacques, S. / Bouix, J. et al. | 2001
- Pr3
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Thermal conversions of some Ba, Sr, Ti oxide precursors for CVDTurgambaeva, A. E. / Igumenov, I. K. et al. | 2001
- Pr3
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Effect of double-layers formation on the deposition of microcrystalline silicon films in hydrogen diluted silane dischargesHammad, A. / Amanatides, E. / Rapakoulias, D. E. / Mataras, D. et al. | 2001
- Pr3
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Aluminium nitride synthesis by RPECVDBelmonte, T. / Poussardin, J. Y. / Lefevre, L. / Michel, H. et al. | 2001
- Pr3
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Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD methodIzumi, A. / Sato, H. / Matsumura, H. et al. | 2001
- Pr3
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MOCVD grown InGaP/GaAs multiple negative-differential-resistance (MNDR) resonant-tunneling bipolar transistorsLiu, W.-C. / Pan, H.-J. / Yen, C.-H. / Lin, K.-P. / Wu, C.-Z. / Chiou, W.-H. / Chen, C.-Y. et al. | 2001
- Pr3
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Influence of texture on the absorption threshold of LPCVD silicon filmsDavazoglou, D. / Kouvatsos, D. N. / Valamontes, E. et al. | 2001
- Pr3
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Study of SiO~2-films deposited by adding N~2O or O~2 to TEOS in photo-chemical vapor deposition at room temperatureMotoyama, Y. / Miyano, J.-I. / Toshikawa, K. / Yagi, Y. / Yanagida, H. / Kurosawa, K. / Yokotani, A. et al. | 2001
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Thermodynamic and kinetic criteria to select hydrocarbon precursorde Persis, S. / Teyssandier, F. et al. | 2001
- Pr3
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Kinetic modelling of gas-phase decomposition of propane: Correlation with pyrocarbon depositionDescamps, B. / Vignoles, G. L. / Feron, O. / Lavenac, J. / Langlais, F. et al. | 2001
- Pr3
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Kinetics of LPCVD of aluminium nitride films based on pyrolysis of aluminium chloride complexAlexandrov, S. E. / Chistiakov, V. A. et al. | 2001
- Pr3
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Computational design and analysis of MOVPE reactorsPawlowski, R. P. / Salinger, A. G. / Romero, L. A. / Shadid, J. N. et al. | 2001
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Properties of thin AlN films prepared by PECVD and rapid thermal processesBeshkov, G. D. / Georgiev, S. S. / Grigorov, K. G. / Maciel, H. S. / Djouadi, A. / Marinov, M. et al. | 2001
- Pr3
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Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressureSlaoui, A. / Bourdais, S. et al. | 2001
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Nanophased ZrO~2-CeO~2 or TiO~2-ZrO~2-CeO~2 films by CVD as catalysts for hydrocarbon complete combustionBarreca, D. / Battiston, G. A. / Casellato, U. / Gerbasi, R. / Roncari, E. / Tondello, E. / Zanella, P. et al. | 2001
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Metal and oxide thin film MO CVD as a base for nanostructure and superlattice formationBakovets, V. V. / Gelfond, N. V. / Mitkin, V. N. / Levashova, T. M. / Dolgovesova, I. P. / Ratushnjak, V. T. / Martynets, V. G. et al. | 2001
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Chemical vapour deposition of copper using copper(II) alkoxidesBecker, R. / Weiss, J. / Devi, A. / Fischer, R. A. et al. | 2001
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Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin filmsAmanatides, E. / Rapakoulias, D. E. / Mataras, D. et al. | 2001
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Room temperature deposition of GeO~2 thin film using dielectric barrier discharge driven excimer lampsMaezono, Y. / Yanagita, H. / Nishi, K. / Miyano, J.-I. / Yokotani, A. / Kurosawa, K. / Hishinuma, N. / Matsuno, H. et al. | 2001
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CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramicsZemskova, S. M. / Haynes, J. A. / Cooley, K. M. et al. | 2001
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Coating of continuous carbon fibers with double layers by chemical vapor depositionPopovska, N. / Schmidt, S. / Edelmann, E. / Wunder, V. K. / Gerhard, H. / Emig, G. et al. | 2001
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Characterisation of LPCVD silicon oxynitride films by optical spectroscopyBercu, M. / Cobianu, C. / Modreanu, M. / Bercu, B. N. et al. | 2001
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Characterization of the core structure of growth defects in CVD diamond films by UHREM: Z-shaped twin interactionsDorignac, D. / Delclos, S. / Phillipp, F. / Silva, F. / Gicquel, A. et al. | 2001
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Deposition of Cr, Al coatings on Ni by means of a PB and FB CVD processChristoglou, C. / Angelopoulos, G. N. et al. | 2001
- Pr3
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Diagnostics of TiN coatings process in pulsed D.C plasma enhanced chemical vapor depositionMa, S. / Xu, K. / Ji, V. et al. | 2001
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A TCAD tool for the simulation of the CVD process based on cellular automataSirakoulis, G. C. / Karafyllidis, I. / Thanailakis, A. et al. | 2001
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Perovskite heterostructures grown by MOCVDGorbenko, O. Y. / Graboy, I. E. / Novozhilov, M. A. / Kaul, A. R. / Wahl, G. / Svetchnikov, V. L. et al. | 2001
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Nanocrystalline ZnO from siloxy-substituted single-source precursorsMerz, K. / Schoenen, R. / Driess, M. et al. | 2001
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CVD deposition of cobalt oxide (Co~3O~4) from Co(acac)~2Rivera, E. F. / Atakan, B. / Kohse-Hoinghaus, K. et al. | 2001
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Structure study of thin RPECVD Cd~xZn~1~-~xS filmsFainer, N. I. / Kosinova, M. L. / Rumyantsev, Y. M. / Maximovski, E. A. / Terauchi, M. / Shibata, K. / Satoh, F. / Tanaka, M. / Sysoeva, N. P. / Kuznetsov, F. A. et al. | 2001
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Spouted bed metallorganic chemical vapor deposition of ruthenium on NiCoCrAlYTa powdersJuarez, F. / Castillo, A. / Pieraggi, B. / Vahlas, C. et al. | 2001
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NIR diode laser based process control for industrial CVD reactorsHopfe, V. / Sheel, D. W. / Raisbeck, D. / Rivero, J. M. / Graehlert, W. / Throl, O. / van Mol, A. M. B. / Spee, C. I. M. A. et al. | 2001
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Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation: A powerful techniqueMuller, J. / Wittig, B. / Sternkicker, H. / Bendix, S. et al. | 2001
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Density functional study on the adsorption of DMAH on hydrogen terminated Si(111) surfacesMatsuwaki, T. / Nakajima, T. / Yamashita, K. et al. | 2001
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(HFA)Cu·1,5-COD as the prospective precursor for CVD-technologies: The electronic structure, thermodynamical properties and process of formation of thin copper filmsLiskovskaya, T. I. / Bulusheva, L. G. / Okotrub, A. V. / Krupoder, S. A. / Semyannikov, P. P. / Asanov, I. P. / Igumenov, I. K. / Manaev, A. V. / Traven, V. F. / Cherkov, A. G. et al. | 2001
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Low pressure chemical vapor deposition of Cu~xSMeester, B. / Reijnen, L. / de Lange, F. / Goossens, A. / Schoonman, J. et al. | 2001
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CVD growth of silicon films at high ratesHofstatter, M. / Atakan, B. / Kohse-Hoinghaus, K. et al. | 2001
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Treatment of polyethylene terephthalate in a He glow dischargePapakonstantinou, D. D. / Mataras, D. / Arefi-Khonsari, F. et al. | 2001
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Chemical vapour deposition - a promising method for production of different kinds of carbon nanotubesLeonhardt, A. / Ritschel, M. / Bartsch, K. / Graff, A. / Taschner, C. / Fink, J. et al. | 2001
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Composition, morphology and particle size control in nanocrystalline iron oxide films grown by single-source CVDMathur, S. / Veith, M. / Sivakov, V. / Shen, H. / Gao, H.-B. et al. | 2001
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Direct liquid injection MOCVD growth of TiO~2 films using the precursor Ti(mpd)(dmae)~2Awaluddin, A. / Pemble, M. E. / Jones, A. C. / Williams, P. A. et al. | 2001
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MO CVD obtaining composite coatings from metal of platinum group on titanium electrodesGelfond, N. V. / Galkin, P. S. / Igumenov, I. K. / Morozova, N. B. / Fedotova, N. E. / Zharkova, G. I. / Shubin, Y. V. et al. | 2001
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Comparative characterization of nitrogen-rich CN~x films prepared by different ICP-CVD techniquesPopov, C. / Bulir, J. / Zambov, L. / Jelinek, M. / Delplancke-Ogletree, M.-P. / Kulisch, W. et al. | 2001
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In situ mass spectrometry during thermal CVD of the tris-acetylacetonates of 3-d transition metalsSemyannikov, P. P. / Igumenov, I. K. / Trubin, S. V. / Asanov, I. P. et al. | 2001
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GaN heteroepitaxy by remote plasma MOCVD: Real time monitoring by laser reflectance interferometryLosurdo, M. / Grimaldi, A. / Giangregorio, M. / Capezzuto, P. / Bruno, G. et al. | 2001
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Chemical vapor deposition of silicon carbide at various temperatures and surface area/volume ratiosZhang, W. G. / Huttinger, K. J. et al. | 2001
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Effect of the precursors on the deposition of (Ba, Sr)TiO~3 filmsLee, J.-H. / Yang, W.-Y. / Rhee, S.-W. / Kim, D. et al. | 2001
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Organic chemistry by CVDHe, L. / Hitchman, M. L. / Shamlian, S. H. / Alexandrov, S. E. et al. | 2001
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Growth of Ru and RuO~2 films by metal-organic chemical vapour depositionFrohlich, F. / Machajdik, D. / Cambel, V. / Fedor, J. / Pisch, A. / Lindner, J. et al. | 2001
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Tin oxide APCVD thin films grown by SnCl~4 oxidation on glass and Si substrates in a cold wall reactorKoutsogianni, A. / Tsamakis, D. et al. | 2001
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Synthesis and characterization of carbon nanotubesNagy, J. B. / Fonseca, A. et al. | 2001
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Synthesis of nanocomposite Pd balls and wires by chemical vapor infiltrationLee, K.-B. / Choi, C.-S. / Oh, S. J. / Ri, H.-C. / Cheon, J. et al. | 2001
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General aspects of surface chemistry of metal beta-diketonatesIgumenov, I. K. / Turgambaeva, A. E. / Semyannikov, P. P. et al. | 2001
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Synthesis of siloxy- and alkoxy-substituted ZnO-aggregates for CVS of ZnOSchoenen, R. / Merz, K. / Rell, S. / Driess, M. et al. | 2001
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New volatile polyazolylborates of copper(I) for MOCVDDrozdov, A. / Troyanov, S. I. / Pettinari, C. / Marchetti, F. / Santini, C. / Pettinari, R. / Battiston, G. A. / Gerbasi, R. et al. | 2001
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Growth of InN whiskers from single source precursorDevi, A. / Parala, H. / Rogge, W. / Wohlfart, A. / Birkner, A. / Fischer, R. A. et al. | 2001
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Growth of porous columnar alpha-GaN layers on c-plane Al~2O~3 by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursorWohlfart, A. / Devi, A. / Hipler, F. / Becker, H. W. / Fischer, R. A. et al. | 2001
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Room temperature SiO~2 films deposited by multipolar ECR PECVDIsai, G. / Kovalgin, A. / Holleman, J. / Woerlee, P. / Wallinga, H. et al. | 2001
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Selective area deposition of titanium dioxide thin films by light induced chemical vapour depositionHalary-Wagner, E. / Lambelet, P. / Benvenuti, G. / Hoffmann, P. et al. | 2001
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APCVD-molybdenum oxide thin films: Vibrational and optical propertiesGesheva, K. A. / Ivanova, T. / Szekeres, A. / Maksimov, A. / Zaitzev, S. et al. | 2001
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MOCVD of antimony oxides for gas sensor applicationsHaycock, P. W. / Horley, G. A. / Molloy, K. C. / Myers, C. P. / Rushworth, S. A. / Smith, L. M. et al. | 2001
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Unique precursor delivery and control afforded by low-pressure pulsed-CVD process with ultrasonic atomizationKrumdieck, S. / Sbaizero, O. / Raj, R. et al. | 2001
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The growth kinetics study of CVD Cu on TiN barriersPan, W. / Evans, D. R. / Barrowcliff, R. / Hsu, S. T. et al. | 2001
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Modelling of silica film growth by chemical vapour deposition: Influence of the interface propertiesVazquez, L. / Ojeda, F. / Cuerno, R. / Salvarezza, R. / Albella, J. M. et al. | 2001
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Tow-dimensional simulation of a pulsed-power electronegative dischargeRamamurthi, B. / Economou, D. J. et al. | 2001
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Thermodynamic modelling of the chemical vapour deposition of boron nitride in the B-N-H-He-O systemGolubenko, A. N. / Kosinova, M. L. / Kuznetsov, F. A. et al. | 2001
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Halide CVD of dielectric and ferroelectric oxidesHarsta, A. et al. | 2001
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Modification of activated carbon fiber pore structure by coke depositionDabou, X. / Samaras, P. / Sakellaropoulos, G. P. et al. | 2001
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Growth of magnetoresistant La~1~-~xMnO~3 films on r-plane cut sapphireFrohlich, K. / Pripko, M. / Vavra, I. / Denesova, K. / Machajdik, D. et al. | 2001
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Preparation and optical study of APCVD mixed metal oxide filmsIvanova, T. / Gesheva, K. A. / Szekeres, A. / Maksimov, A. / Zaitzev, S. et al. | 2001
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Silicon oxide nanolayers for soft X-ray optics produced by plasma enhanced CVDHamelmann, F. / Aschentrup, A. / Schmalhorst, J. / Kleineberg, U. / Heinzmann, U. / Dittmar, K. / Jutzi, P. et al. | 2001
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MOCVD of Ag thin filmsParamonov, S. / Samoilenkov, S. / Papucha, S. / Malkerova, I. / Alikhanyan, A. / Kuzmina, N. / Troyanov, S. I. / Kaul, A. R. et al. | 2001
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Cobalt oxide thin films prepared by metalorganic chemical vapor deposition from cobalt acetylacetonateMane, A. U. / Shalini, K. / Shivashankar, S. A. et al. | 2001
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Deposition by an aerosol assisted MOCVD process of Eu or Er doped Y~2O~3-P~2O~5 thin filmsDeschanvres, J. L. / Meffre, W. et al. | 2001
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Influence of thermal decomposition behavior of titanium precursors on (Ba,Sr)TiO~3 thin filmsMin, Y. S. / Cho, Y. J. / Kim, D. / Lee, J. H. / Kim, B. M. / Lim, S. K. / Lee, I. M. / Lee, W. I. et al. | 2001
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MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operationsLiu, W.-C. / Yu, K.-H. / Lin, K.-W. / Lin, K.-P. / Yen, C.-H. / Cheng, C.-C. / Wang, C.-K. / Chuang, H.-M. et al. | 2001
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CVD techniques for gas separation membranes synthesis - characterization - applicationsDurand, J. / Rouessac, V. et al. | 2001
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Atomic layer deposition of Cu~xSReijnen, L. / Meester, B. / Goossens, A. / Schoonman, J. et al. | 2001
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Area selective OMCVD of gold and palladium on self-assembled organic monolayers: Control of nucleation sitesFischer, R. A. / Weckenmann, U. / Winter, C. / Kashammer, J. / Scheumann, V. / Mittler, S. et al. | 2001
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Fabrication of fine copper lines on AZ 5214™ patterned silicon substrates by selective chemical vapor depositionGleizes, A. N. / Vidal, S. / Davazoglou, D. et al. | 2001