Wafer-bonded InGaAs/silicon avalanche photodiodes [4650-05] (English)
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In:
Photodetector materials and devices
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37-43
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2002
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Wafer-bonded InGaAs/silicon avalanche photodiodes [4650-05]
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Contributors:Pauchard, A. ( author ) / Mages, P. ( author ) / Kang, Y. ( author ) / Bitter, M. ( author ) / Pan, Z. ( author ) / Sengupta, D. ( author ) / Hummel, S. ( author ) / Lo, Y. H. ( author ) / Yu, P. K. L. ( author ) / Brown, G. J.
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Conference:Conference; 7th, Photodetector materials and devices ; 2002 ; San Jose, CA
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Published in:
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Publisher:
- New search for: SPIE
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Publication date:2002-01-01
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Size:7 pages
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Optoelectronic components for optical information processing applicationsTaghizadeh, Mohammad R. et al. | 2002
- 1
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Optoelectronic components for optical information processing applications (Invited Paper) [4650-01]Taghizadeh, M. R. / SPIE et al. | 2002
- 11
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Optic fiber clock distribution in high-speed video memory [4650-02]Kosel, P. B. / Hanjani, A. A. / SPIE et al. | 2002
- 11
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Optic fiber clock distribution in high-speed video memoryKosel, Peter B. / Hanjani, Amir A. et al. | 2002
- 23
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GaAs PIN photodetectors for 10 Gbit/s data communicationDillner, Lars / Loow, Roger / Odling, Elsy / Backlin, Eva / Aggerstam, Thomas et al. | 2002
- 23
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GaAs PIN photodetectors for 10 Gbit/s data communication [4650-03]Dillner, L. / Loow, R. / Odling, E. / Backlin, E. / Aggerstam, T. / SPIE et al. | 2002
- 28
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Novel germanium photodetectors fabricated with a diffused junction [4650-04]Morrison, C. B. / Sudharsanan, R. / Haddad, M. / Boisvert, J. C. / Krut, D. D. / King, R. R. / Karam, N. H. / SPIE et al. | 2002
- 28
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Novel germanium photodetectors fabricated with a diffused junctionMorrison, Charles B. / Sudharsanan, Rengarajan / Haddad, Moran / Boisvert, Joseph C. / Krut, Dmitri D. / King, Richard R. / Karam, Nasser H. et al. | 2002
- 37
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Wafer-bonded InGaAs/silicon avalanche photodiodesPauchard, Alexandre / Mages, Phil / Kang, Yimin / Bitter, Martin / Pan, Z. / Sengupta, D. / Hummel, Steve / Lo, Yu-Hwa / Yu, Paul K. L. et al. | 2002
- 37
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Wafer-bonded InGaAs/silicon avalanche photodiodes [4650-05]Pauchard, A. / Mages, P. / Kang, Y. / Bitter, M. / Pan, Z. / Sengupta, D. / Hummel, S. / Lo, Y. H. / Yu, P. K. L. / SPIE et al. | 2002
- 44
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Frequency response of multilayer avalanche photodiodes: structural effectsPereira, Jorge M. T. et al. | 2002
- 44
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Frequency response of multilayer avalanche photodiodes: structural effects [4650-06]Pereira, J. M. T. / SPIE et al. | 2002
- 55
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Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements [4650-07]Jackson, J. C. / Phelan, D. / Morrison, A. P. / Redfern, R. M. / Mathewson, A. / SPIE et al. | 2002
- 55
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Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurementsJackson, John C. / Phelan, Don / Morrison, Alan P. / Redfern, R. Michael / Mathewson, Alan et al. | 2002
- 67
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Structural, optical, and electrical characterization of ZnO/Zn0.8Mg0.2O quantum wells for UV applicationsIliadis, Agisilaos A. / Krishnamoorthy, Soumya / Yang, Wei / Choopun, Supab / Vispute, R. D. / Venkatesan, T. et al. | 2002
- 67
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Structural, optical, and electrical characterization of ZnO/Zn~0~.~8Mg~0~.~2O quantum wells for UV applications (Invited Paper) [4650-08]Iliadis, A. A. / Krishnamoorthy, S. / Yang, W. / Choopun, S. / Vispute, R. D. / Venkatesan, T. / SPIE et al. | 2002
- 75
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High-speed visible-blind GaN-based ITO-Schottky photodiodes [4650-09]Biyikli, N. / Kimukin, I. / Kartaloglu, T. / Aytur, O. / Ozbay, E. / SPIE et al. | 2002
- 75
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High-speed visible-blind GaN-based ITO-Schottky photodiodesBiyikli, Necmi / Kimukin, Ibrahim / Kartaloglu, Tolga / Aytur, Orhan / Ozbay, Ekmel et al. | 2002
- 84
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Femtosecond studies of fundamental materials issues in III-nitride ultraviolet photodetectorsWraback, Michael / Shen, Hongen et al. | 2002
- 84
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Femtosecond studies of fundamental materials issues in III-nitride ultraviolet photodetectors (Invited Paper) [4650-12]Wraback, M. / Shen, H. / SPIE et al. | 2002
- 94
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Advances in wide-bandgap semiconductor-based photocathode devices for low-light-level applicationsUlmer, Melville P. / Wessels, Bruce W. / Siegmund, Oswald H. W. et al. | 2002
- 94
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Advances in wide-bandgap semiconductor-based photocathode devices for low-light-level applications (Invited Paper) [4650-11]Ulmer, M. P. / Wessels, B. W. / Siegmund, O. H. W. / SPIE et al. | 2002
- 104
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Solar-blind AlGaN-based UV photodetectors grown on Si (111) substrates (Invited Paper) [4650-13]Pau, J. L. / Munoz, E. / Sanchez, M. A. / Calleja, E. / SPIE et al. | 2002
- 104
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Solar-blind AlGaN-based UV photodetectors grown on Si (111) substratesPau, Jose L. / Munoz Merino, Elias / Sanchez-Garcia, Miguel A. / Calleja, Enrico et al. | 2002
- 111
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Type-II InAs/GaSb superlattices and detectors with λc >18μmRazeghi, Manijeh / Wei, Yajun / Gin, Aaron / Brown, Gail J. / Johnstone, Daniel K. et al. | 2002
- 111
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Type-II InAs/GaSb superlattices and detectors with Lambdac > 18 mum [4650-45]Razeghi, M. / Wei, Y. / Gin, A. / Brown, G. J. / Johnstone, D. K. / SPIE et al. | 2002
- 117
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Comparison of performance limits of infrared detector materialsRogalski, Antoni et al. | 2002
- 117
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Comparison of performance limits of infrared detector materials (Invited Paper) [4650-15]Rogalski, A. / SPIE et al. | 2002
- 128
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Recent development in infrared FPAs with multispectral 128^2 IRCMOS [4650-16]Baylet, J. P. / Zanatta, J.-P. / Chance, D. / Gravrand, O. / Rothan, F. / De Borniol, E. / Castelein, P. / Chamonal, J.-P. / Ravetto, M. / Destefanis, G. L. et al. | 2002
- 128
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Recent development in infrared FPAs with multispectral 1282IRCMOSBaylet, J. P. / Zanatta, Jean-Paul / Chance, Damien / Gravrand, Olivier / Rothan, Frederic / De Borniol, Eric / Castelein, Pierre / Chamonal, Jean-Paul / Ravetto, Michel / Destefanis, Gerard L. et al. | 2002
- 138
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Amorphous silicon technology improvement at CEA-LETIMottin, Eric / Bain, Astrid / Castelein, Pierre / Ouvrier-Buffet, Jean-Louis / Tissot, Jean-Luc / Yon, Jean-Jacques / Chatard, Jean-Pierre et al. | 2002
- 138
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Amorphous silicon technology improvement at CEA-LETI (Invited Paper) [4650-19]Mottin, E. / Bain, A. / Castelein, P. / Ouvrier-Buffet, J.-L. / Tissot, J.-L. / Yon, J.-J. / Chatard, J.-P. / SPIE et al. | 2002
- 150
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QWIP-LED pixelless imaging (Invited Paper) [4650-20]Liu, H. C. / Dupont, E. / Byloos, M. / Buchanan, M. / Song, C.-Y. / Wasilewski, Z. R. / SPIE et al. | 2002
- 150
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QWIP-LED pixelless imagingLiu, Hui C. / Dupont, Emmanuel / Byloos, M. / Buchanan, Margaret / Song, Chunying / Wasilewski, Zbigniew R. et al. | 2002
- 158
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Whither P-type GaAs/AlGaAs QWIP?Szmulowicz, Frank / Brown, Gail J. et al. | 2002
- 158
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Whither P-type GaAs/AlGaAs QWIP? (Invited Paper) [4650-21]Szmulowicz, F. / Brown, G. J. / SPIE et al. | 2002
- 167
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Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector [4650-24]Li, N. / Ong, T. K. / Chan, Y. C. / Xu, C. Q. / Tang, X. H. / SPIE et al. | 2002
- 167
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Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetectorLi, Na / Ong, Teik Kooi / Chan, Yuen Chuen / Xu, Chang-Qing / Tang, X. H. et al. | 2002
- 173
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Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 μmMatveev, Boris A. / Zotova, Nonna V. / Karandashev, Sergey A. / Remennyi, Maxim A. / Stus', Nikolai M. / Talalakin, Georgii N. et al. | 2002
- 173
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Backside illuminated In(Ga)As/InAsSbP DH photodiodes for methane sensing at 3.3 mum [4650-25]Matveev, B. A. / Zotova, N. V. / Karandashev, S. A. / Remennyi, M. A. / Stus , N. M. / Talalakin, G. N. / SPIE et al. | 2002
- 179
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Type-II InGaAs/GaAsSb superlattice for photodetection in the near infrared [4650-26]Brown, G. J. / Van Nostrand, J. E. / Hedge, S. M. / Siskaninetz, W. / Xie, Q.-H. / SPIE et al. | 2002
- 179
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Type-II InGaAs/GaAsSb superlattice for photodetection in the near infraredBrown, Gail J. / Van Nostrand, Joseph E. / Hedge, S. M. / Siskaninetz, W. J. / Xie, Qianghua et al. | 2002
- 185
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InAs/InGaSb Type-II strained layer superlattice IR detectorsNathan, Vaidya / Anselm, K. Alex / Lin, C.H. T. / Johnson, Jeffrey L. et al. | 2002
- 185
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InAs/InGaSb Type-II strained layer superlattice IR detectors [4650-28]Nathan, V. / Anselm, A. / Lin, C. H. / Johnson, J. / SPIE et al. | 2002
- 199
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Future of Al~xGa~1~-~xN materials and device technology for ultraviolet photodetectors (Invited Paper) [4650-10]Kung, P. / Yasan, A. / McClintock, R. / Darvish, S. / Mi, K. / Razeghi, M. / SPIE et al. | 2002
- 199
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Future of AlxGa1-xN materials and device technology for ultraviolet photodetectorsKung, Patrick / Yasan, Alireza / McClintock, Ryan / Darvish, Shaban / Mi, Kan / Razeghi, Manijeh et al. | 2002
- 207
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Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxyLi, Wei / Pessa, Markus / Ahlgren, Tommy / Dekker, James et al. | 2002
- 207
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Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular beam epitaxy [4650-31]Li, W. / Pessa, M. / Ahlgren, T. / Dekker, J. / SPIE et al. | 2002
- 213
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Noninvasive electrical characterization of semiconductor and interface [4650-32]Kasouit, S. / Drevillon, B. / Conde, J. / Kim, H. J. / Kleider, J. P. / Vanderhaghen, R. / SPIE et al. | 2002
- 213
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Noninvasive electrical characterization of semiconductor and interfaceKasouit, Samir / Drevillon, Bernard / Conde, Joao / Kim, Hyun Jong / Kleider, Jean Paul / Vanderhaghen, Regis et al. | 2002
- 221
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Two-photon excited emission probing of thin film CdS formed by various techniques [4650-33]Ullrich, B. / Schroeder, R. / SPIE et al. | 2002
- 221
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Two-photon excited emission probing of thin film CdS formed by various techniquesUllrich, Bruno / Schroeder, Raoul et al. | 2002
- 229
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Quantitative secondary ion mass spectrometry (SIMS) of III-V materialsVan Lierde, Patrick / Tian, Chunsheng / Rothman, Bruce / Hockett, Richard A. et al. | 2002
- 229
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Quantitative secondary ion mass spectrometry (SIMS) of III-V materials [4650-34]Van Lierde, P. / Tian, C. / Rothman, B. / Hockett, R. A. / SPIE et al. | 2002
- 234
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Assessment of colossal magnetoresistive manganite thin films for infrared detector applications [4650-35]Donohue, P. P. / Watton, R. / Todd, M. A. / Blamire, M. G. / Jo, M.-H. / SPIE et al. | 2002
- 234
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Assessment of colossal magnetoresistive manganite thin films for infrared detector applicationsDonohue, Paul P. / Watton, Rex / Todd, Michael A. / Blamire, Mark G. / Jo, Moon-Ho et al. | 2002
- 242
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Improved velocity mismatch in traveling-wave coplanar waveguide photodetector with thick ground-metal-lineYoon, Sang-Jun / Ok, Seong-Hae / Yoon, Young-Seol / Kong, Soon-Chel / Choi, Young-Wan et al. | 2002
- 242
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Improved velocity mismatch in traveling-wave coplanar waveguide photodetector with thick ground-metal-line [4650-37]Yoon, S.-J. / Ok, S.-H. / Yoon, Y.-S. / Kong, S.-C. / Choi, Y.-W. / SPIE et al. | 2002
- 250
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Surface leakage current in HgCdTe photodiodesWenus, Jakub / Rutkowski, Jaroslaw / Rogalski, Antoni et al. | 2002
- 250
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Surface leakage current in HgCdTe photodiodes [4650-39]Wenus, J. / Rutkowski, J. / Rogalski, A. / SPIE et al. | 2002