ZnO Film Deposition by Plasma Enhanced CVD Using Zinc-Acetylacetonate (English)
- New search for: Aoki, T.
- New search for: Nonaka, H.
- New search for: Hatanaka, Y.
- New search for: Aoki, T.
- New search for: Nonaka, H.
- New search for: Hatanaka, Y.
- New search for: Swihart, M. T.
- New search for: Allendorf, M. D.
- New search for: Meyyappan, M.
In:
Fundamental gas-phase and surface chemistry of vapor-phase deposition; Process control, diagnostics, and modeling in semiconductor manufacturing IV
;
421-428
;
2001
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ISBN:
- Conference paper / Print
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Title:ZnO Film Deposition by Plasma Enhanced CVD Using Zinc-Acetylacetonate
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Contributors:Aoki, T. ( author ) / Nonaka, H. ( author ) / Hatanaka, Y. ( author ) / Swihart, M. T. / Allendorf, M. D. / Meyyappan, M.
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Conference:Symposia; 2nd, Fundamental gas-phase and surface chemistry of vapor-phase deposition; Process control, diagnostics, and modeling in semiconductor manufacturing IV
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Published in:PROCEEDINGS- ELECTROCHEMICAL SOCIETY PV ; 2001-13 ; 421-428
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Publisher:
- New search for: Electrochemical Society
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Publication date:2001-01-01
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Size:8 pages
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Remarks:From 2 symposia held at the 119th Electrochemical Society meeting
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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High-Temperature Kinetic of AlCl~3 Decomposition in the Presence of Additives for Chemical Vapor DepositionCatoire, L. / Swihart, M. T. et al. | 2001
- 9
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Kinetics and Mechanism of the Thermal Decomposition of Tetrakis (Dimethylamino) TitaniumNorton, E. / Amato-Wierda, C. et al. | 2001
- 17
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Kinetics of Gas-Phase Reactions in the N-H Systemde Persis, S. / Teyssandier, F. / Dollet, A. et al. | 2001
- 25
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CVD of Group 13-15 Binary Materials: Importance of the Association Reactions in the Gas PhaseTimoshkin, A. et al. | 2001
- 33
-
Three Dimensional Monte Carlo Simulation of beta-SiC Deposition from the Vapor PhaseChaix, G. / Dollett, A. et al. | 2001
- 41
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Study of Initial Growth of Cu on SiO~2 and 3-mercaptopropyltrimethoxysilane-coated SiO~2Hu, M. / Noda, S. / Ogawa, Y. / Tsuji, Y. / Okubo, T. / Yamaguchi, Y. / Komiyama, H. et al. | 2001
- 47
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Hydrogen Desorption Kinetics from Silicon-Germanium Alloy SurfacesParkinson, P. / Ekerdt, J. et al. | 2001
- 59
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Probing the Adsorption of Fluorine on Aluminum (111) Surfaces by Low-Energy Ion Scattering and Density Functional CalculationsBastasz, R. / Allendorf, M. D. et al. | 2001
- 69
-
Rate Theory of Multicomponent Adsorption of Organic Species from Gas Phase on Silicon Wafer SurfaceHabuka, H. / Shimada, M. / Okuyama, K. et al. | 2001
- 76
-
Temperature-Programmed Desorption Study on the Decomposition Mechanism of Ti (OC~3H~7)~4 on Si (100)Cho, S.-I. / Chung, C.-H. / Moon, S. H. et al. | 2001
- 84
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Kinetic Mechanism of Silicon Epitaxial Growth from ChlorosilanesValente, G. / Cavallotti, C. / Masi, M. / Carra, S. et al. | 2001
- 92
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Evaluating the Contributions of Both Catalytic and Thermal Chemistry in Hot-Wire Chemical Vapor DepositionZhou, J. / Overmeyer, A. / Wolden, C. et al. | 2001
- 100
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A Mechanism-Based Model of Chemical Vapor Deposition of Epitaxial Si~1~-~xGe~x FilmsStoker, M. / Merchant, T. / Morton, A. / Hildreth, J. et al. | 2001
- 108
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Reduction of Complex Gaseous Reaction Mechanisms Used in the CVD Processde Persis, S. / Teyssandier, F. et al. | 2001
- 116
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Homogeneous and Surface Chemistry of the Chemical Vapor Deposition of Aluminosilicates from Metal Chloride Mixtures in CO~2 and H~2Sotirchos, S. V. / Nitodas, S. F. et al. | 2001
- 124
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Fragmentation of the Intramolecularly Coordinated Alane Me~2NCH~2CD~2CH~2AlBr~2: A Matrix-Isolation StudyMuller, J. / Wittig, B. et al. | 2001
- 129
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Role of HCl in CVD Reaction Mechanisms Involving Chloridic Precursors: The Deposition Kinetics of SiC from MTSNeuschutz, D. / Delhaes, C. / Muller, J. et al. | 2001
- 136
-
Automatic Control of Stoichiometry in CVD of Metal Silicates by Alternating Surface ReactionsGordon, R. G. et al. | 2001
- 144
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Zirconium Oxide CVD on Si(100) from Zirconium Tetra-tert-Butoxide: Growth Kinetics and Film MicrostructureBurleson, D. J. / Roberts, J. T. / Gladfelter, W. L. / Cambell, S. A. / Smith, R. C. et al. | 2001
- 152
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Chemical Deposition Routes to HfO~2: Real-Time Monitoring and Film GrowthForsgren, K. / Harsta, A. / Aarik, J. / Aidla, A. et al. | 2001
- 160
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Experimental and Numerical Study of the CVD of TiO~2 using New Titanium PrecursorsLeistner, T. / Frey, L. / Bauer, A. / Schmidt, C. / Lehmbacher, K. / Harter, P. / Herrmann, W. / Mesic, E. / Kaufmann, P. / Kadinski, L. et al. | 2001
- 168
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In-Situ Gas-Phase Optical Measurements of Silane Decomposition in a Thermal Chemical Vapor Deposition ReactorMaslar, J. E. / Hurst, W. S. / Kremer, D. M. / Ehrman, S. H. et al. | 2001
- 176
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Near-Infrared Diode Laser In Situ Monitoring and Control of Chemical Vapor Deposition ProcessesMartin, P. A. / Holdsworth, R. J. / Davis, M. / Pemble, M. E. / Sheel, D. et al. | 2001
- 183
-
Photoemission Oscillations Observed in Chemical Beam Epitaxy of GaAs using Triethygallium and OrganoarsinesMaury, F. / Gue, A. M. / Viguier, N. et al. | 2001
- 191
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In-Situ-Gas Phase Analysis during Silicon Thin Film Deposition: Molecular Beam Sampling, Laser Ionization and Mass SpectrometryStafast, H. / Falk, F. / Witkowicz, E. et al. | 2001
- 199
-
In Situ Fault Detection and Thickness Metrology using Quadruple Mass SpectrometryRying, E. A. / Bilbro, G. L. / Ozturk, M. C. / Lu, J. C. et al. | 2001
- 207
-
Characterization of Thin Dielectric Layers using the Non-Contact Surface Charge Profiler (SCP) MethodRoman, P. / Lee, D. D. / Wang, J. / Mumbauer, P. / Grant, R. / Tower, J. / Kamieniecki, E. / Lukasiak, L. / Ruzyllo, J. et al. | 2001
- 213
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Characterization of a Multi-Element Diffusion Burner for Combustion Synthesis StudiesTorek, P. V. / Hall, D. L. / Miller, T. A. / Wooldridge, M. S. et al. | 2001
- 221
-
Computer Simulation of WSi~x CVD VLSI Processing Effect of Abnormal Inlet Gas FlowsSugawara, K. / Muranushi, T. / Takai, T. / Chae, Y. K. / Shimogaki, Y. / Komiyama, H. / Egashira, Y. et al. | 2001
- 229
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Modeling of SiGe Epitaxial Growth in a Wide Range of Growth ConditionsSegal, A. S. / Sid ko, A. P. / Karpov, S. Y. / Makarov, Y. N. et al. | 2001
- 237
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Interaction between Gas Diffusion and Multistable Heterogeneous Chemical Kinetics in C/C Composite ProcessingVignoles, G. L. / Baconneau, O. / Brauner, C. M. et al. | 2001
- 245
-
Numerical Simulation of Vapor Phase Deposition Based on Thermodynamics, Kinetics and Mass TransportBernard, C. et al. | 2001
- 260
-
Process Analysis and Modeling of Thin Silicon Film Deposition by Hot-Wire Chemical Vapor DepositionAparicio, R. / Birkmire, R. / Pant, A. / Huff, M. / Russell, T. W. F. et al. | 2001
- 268
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Comparison between Computational Modeling and Experiment for a CVD Growth Process of Silicon FilmsAtakan, B. / Hofstatter, M. / Kohse-Hoinghaus, K. et al. | 2001
- 276
-
Modeling of a Silane LPCVD Process Used for Microelectronics and MEMS FabricationPawlowski, R. P. / Salinger, A. G. / Habermehl, S. D. / Ho, P. et al. | 2001
- 284
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Theoretical Optimization of A1-CVD using Elementary Reaction SimulationSugiyama, M. / Iino, T. / Nakajima, T. / Tanaka, T. / Itoh, H. / Aoyama, J. / Egashira, Y. / Yamashita, K. / Komiyama, H. / Shimogaki, Y. et al. | 2001
- 292
-
Detailed Modeling of Metal Organic Vapor Phase Epitaxy of III-V Ternary Compounds in Production-Scale AIX 2400G3 Planetary ReactorYakovlev, E. V. / Shpolyanskiy, Y. A. / Talalaev, R. A. / Karpov, S. Y. / Makarov, Y. N. / Bergunde, T. / Lowry, S. A. et al. | 2001
- 300
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Numerical Simulation of the CVD of SiC Using Different Kinetic ModelsWunder, V. K. / Popovska, N. / Gerhard, H. / Emig, G. / Kadinski, L. / Durst, F. et al. | 2001
- 308
-
Two-Dimensional Simulation of Pulsed Power Electronegative PlasmasRamamurth, B. / Economou, D. et al. | 2001
- 316
-
A Feature Scale Transport and Reaction Model for Atomic Layer DepositionGobbert, M. K. / Cale, T. J. et al. | 2001
- 324
-
Recipe for Implantation and Annealing of N^+ Source and Drain for the 180 nm and 100 nm Technology NodesLi, H. J. / Chen, X. / Zeitzoff, P. / Torres, K. / Banerjee, S. et al. | 2001
- 332
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Effects of Pulsating Flow on Cleaning of and Deposition into TrenchesSuni, I. I. / Lin, H. / Busnaina, A. A. et al. | 2001
- 340
-
Chemical Vapor Deposition of Hard Coatings: Part 1: Ti-W-C by TiCl~4 + W(CO)~6 + CH~4 and Part 2: TiCN and TiN from Tetrakis (Dimethylamido) TitaniumJi, H. / Delisle, D. / Blais, C. / Amato-Wierda, C. et al. | 2001
- 348
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Codeposition of the Deb-Palladium Hydrogen Getter SystemCarroll, D. W. / Pesiri, D. R. / Salazar, K. V. / Trkula, M. / Rau, J. A. / Sandoval, C. W. et al. | 2001
- 356
-
InN Whisker Growth by Chemical Vapor DepositionParala, H. / Devi, A. / Hipler, F. / Birkner, A. / Fischer, R. A. et al. | 2001
- 365
-
Improved Chemical Vapor Deposition of Diamond Layers on Cemented Carbides by Formation of Tungsten-Cobalt-Boron Phases in the Interface RegionCremer, R. / Muller, J. / Neuschutz, D. / Leyendecker, T. / Lemmer, O. / Frank, M. / Gussone, J. et al. | 2001
- 373
-
Nanophasic CeO~2/ZrO~2 Single and Mixed Oxides Thin Films Obtained by CVDArmelao, L. / Barreca, D. / Tondello, E. / Battiston, G. A. / Gerbasi, R. / Zanella, P. / Barison, S. / Daolio, S. / Fabrizio, M. et al. | 2001
- 381
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A Study on Surface Morphology of Si Thin Film Grown by Temperature Modulation Molecular Layer Epitaxy MethodNishizawa, J. / Murai, A. / Oizumi, T. / Kurabayashi, T. / Kanamoto, K. / Yoshida, T. et al. | 2001
- 389
-
Laser-Assisted Gas-Phase Reactivity of Trimethylaluminum with NH~3 in Constrained Gas Pulse Nozzle ExpansionsDemchuk, A. / Simpson, S. / Koplitz, B. et al. | 2001
- 397
-
Gas Phase Analysis of TiCl~4 and NH~3 Plasma Processes by Molecular Beam Mass SpectrometryReddy, C. M. / Amato-Wierda, C. et al. | 2001
- 405
-
Energy and Angular Distribution of Ions Extracted from a Large Hole in Contact with a High Density PlasmaKim, C. K. / Economou, D. J. et al. | 2001
- 415
-
Deposition of Indium Oxide Films in Plasma CVDMatsumoto, O. / Haraoka, N. / Midorikawa, Y. / Itoh, K. et al. | 2001
- 421
-
ZnO Film Deposition by Plasma Enhanced CVD Using Zinc-AcetylacetonateAoki, T. / Nonaka, H. / Hatanaka, Y. et al. | 2001
- 429
-
Nanosized GaN Particles by Chemical Vapor InfiltrationParala, H. / Devi, A. / Birkner, A. / Fischer, R. A. et al. | 2001
- 437
-
Modeling of Aluminum Nanoparticle FormationSchefflan, R. / Kalyon, D. / Kovenklioglu, S. et al. | 2001
- 448
-
Photothermal Aerosol Synthesis and Characterization of Silicon NanoparticlesTalukdar, S. / Li, X. / Swihart, M. T. et al. | 2001
- 455
-
Kinetic Monte Carlo Simulation of Homogeneous Nucleation of Hydrogenated Silicon Particles During Silane DecompositionLi, X. / Swihart, M. T. et al. | 2001
- 462
-
Modeling Analysis of Gas-Phase Generated Silicon Clusters in a Rotating Disk CVD ReactorVorob ev, A. / Makarov, N. Y. / Karpov, S. U. et al. | 2001
- 468
-
Kinetic Modeling of Particle Formation During Low-Pressure Silane Oxidation and CVDSuh, S. M. / Girshick, S. L. / Zachariah, M. R. et al. | 2001
- 481
-
Gas-Phase Nucleation in Low-Pressure Silane PlasmasBhandarkar, U. V. / Girshick, S. L. / Swihart, M. T. / Kortshagen, U. R. et al. | 2001
- 488
-
CFD Modeling of Aerosol Reactors for Material SynthesisMasi, M. / di Muzio, F. / Carra, S. et al. | 2001
- 496
-
Dynamic Feedback Recipe in CMP Production lineChih-Hung, L. / Chi-Yeh, H. / Chi-Hung, L. / Liang-Keui, C. / Hsing-Hua, W. et al. | 2001