Impedance and Etch Characterization of NF~3/Ar/He Etching of Damascene SiC Etch-Stop Layer (English)
- New search for: Abdelrahman, M.
- New search for: Hussein, M.
- New search for: Abdelrahman, M.
- New search for: Hussein, M.
In:
Dry process; DPS 2004
;
41-46
;
2004
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ISBN:
- Conference paper / Print
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Title:Impedance and Etch Characterization of NF~3/Ar/He Etching of Damascene SiC Etch-Stop Layer
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Contributors:Abdelrahman, M. ( author ) / Hussein, M. ( author )
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Conference:26th:; International symposium, Dry process; DPS 2004 ; 2004 ; Tokyo
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Published in:Dry process; DPS 2004 ; 41-46PROCEEDINGS OF SYMPOSIUM ON DRY PROCESS ; 26 ; 41-46
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Publisher:
- New search for: IEEJ,
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Publication date:2004-01-01
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Size:6 pages
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Transfer of Line Edge Roughness during Gate Patterning processesLeunissen, L. H. A. / Ercken, M. / Goethals, M. / Locorotondo, S. / Ronse, K. / Derksen, G. B. / Nijkerk, D. / Lorusso, G. F. et al. | 2004
- 7
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Reduction Technique of Line-Edge Roughness Independent of CD Shift in Gate-Etching ProcessKurihara, M. / Izawa, M. et al. | 2004
- 13
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Control of Surface Morphology and Etch Selectivity Using Fluorocarbon Film during Dry EtchingChae, Y. S. / Choi, H. W. / Sun, J. W. / Hong, J. / Shin, C. H. / Min, G. J. / Kang, C. J. / Cho, H. K. / Moon, J. T. et al. | 2004
- 19
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Striation Free Technology for 193nm PhotoresistWu, C. N. / Lee, C. J. / Shiau, W. T. / Liao, K. / Sun, S. W. / Kelly, A. J. / Vinogradov, G. / Tsukada, T. / Kawabata, K. et al. | 2004
- 23
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Plasma-induced 193-nm Resist Deformation: Problems and a Possible SolutionStruyf, H. / Le, Q. T. / Dupont, T. / Boullart, W. / Vanhaelemeersch, S. et al. | 2004
- 29
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Minimizing Plasma Damage of CVD Low-k Materials by Tuning a Two Step Etch SequenceVan Aelst, J. / Struyf, H. / Le, Q. T. / Boullart, W. / Vanhaelemeersch, S. / Baklanov, M. R. et al. | 2004
- 35
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Atomic-scale Simulation of Passivation Layer Formation during Organic Polymer Plasma EtchingYamada, H. / Hamaguchi, S. et al. | 2004
- 41
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Impedance and Etch Characterization of NF~3/Ar/He Etching of Damascene SiC Etch-Stop LayerAbdelrahman, M. / Hussein, M. et al. | 2004
- 47
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Beam Study on Mechanism of Carbon-Monoxide Assisted Nickel EtchingToyoda, H. / Kinoshita, Y. / Sugai, H. et al. | 2004
- 51
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Investigation of Plasma Nitridation of Silicon and its Chemistry for GaN GrowthIshijima, T. / Okada, T. / Honda, Y. / Sugai, H. et al. | 2004
- 55
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Observation of High Energy Particles Incident on Substrate in Magnetron Sputter DepositionSakashita, Y. / Toyoda, H. / Takagi, Y. / Gao, J. S. / Sasaki, K. / Iwata, S. / Kato, K. / Sugai, H. et al. | 2004
- 59
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Observation of Direct SiO~2 Etching by Fluorocarbon Molecules with Argon Ion BombardmentTakada, N. / Toyoda, H. / Sugai, H. et al. | 2004
- 63
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Influence of Dielectric Window Material and Pumping Speed on Silicon Film Crystallinity Deposited by Surface Wave PlasmaHotta, Y. / Toyoda, H. / Sugai, H. et al. | 2004
- 67
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Meter-Scale High-Density Microwave Plasma Production with Novel Antenna Coupler DesignNojiri, Y. / Takasu, K. / Ishijima, T. / Sugai, H. et al. | 2004
- 71
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Two Inherent Photoluminescence Bands in Hafnia and ZirconiaIto, T. / Maeda, M. / Nakamura, K. / Takase, M. / Kato, H. / Ohki, Y. et al. | 2004
- 77
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Inert Gas Effects on High Aspect Ratio Contact (HARC) Hole EtchingSon, S. Y. / Shin, C. H. / Kim, Y. J. / Min, G. J. / Kang, C. J. / Cho, H. K. et al. | 2004
- 81
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Electron Density Monitoring by Surface Wave Probe in Magnetic FieldYajima, S. / Nakamura, K. / Sugai, H. et al. | 2004
- 85
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SiO~2 Etching and Diagnostics of Radicals in Atmospheric Pressure-Pulsed CF~4/Ar Plasma with O~2 AdditionIwasaki, M. / Ito, M. / Hori, M. / Kitahata, H. / Uehara, T. et al. | 2004
- 91
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ID Bias Control during W/WN/poly Gate Etching for Nano-scale DRAM Process IntegrationKim, K.-O. / Sun, J.-H. / Jung, J.-K. / Lee, S.-K. / Cho, Y.-S. / Lee, D.-D. / Moon, S.-C. / Kim, J.-W. / Yoon, G.-H. et al. | 2004
- 97
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Automatic Recipe Control to Improve Wafer-to-Wafer and Lot-to-Lot Linewidth and Profile Variations of Hardmask Open Process using Integrated Optical CD MeasurementsShon, J. W. / Pirkle, D. R. / Jung, Y. J. / Min, K. J. / Kang, C. J. et al. | 2004
- 103
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Control of Ion Flux Non-Uniformity on Wafer Caused by Sheath Lens EffectStamate, E. / Holtzer, N. / Sugai, H. et al. | 2004
- 107
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Sheath Voltage Estimation for Thick Glass Substrate EtchingKawata, H. / Toyota, H. / Yasuda, M. / Hirai, Y. et al. | 2004
- 113
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Fabrication of a MEMS Probe Card with Feedthrough InterconnectionsChoe, S.-H. / Esashi, M. et al. | 2004
- 121
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Comparision of C~4F~6 with C~4F~8 Plasma Process for a-C: F Film DepositionWatanabe, H. / Tokimitsu, T. / Egashira, Y. / Shimogaki, Y. et al. | 2004
- 127
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Dry Etching of Magnetic Thin Film Stacks using CO/NH~3 and CH~3OH Gases for Tunneling Magneto-Resistance DevicesOsada, T. / Doi, M. / Sakamoto, K. / Maehara, H. / Kodaira, Y. et al. | 2004
- 133
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Sub-65nm Etch Challenges of High-k and Metal Gate MaterialsKota, G. P. / Ramalingam, S. / Lee, S. / Coenegrachts, B. / Lee, C. / Beckx, S. / Demand, M. / Boullart, W. et al. | 2004
- 139
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Gate Etch Challenges and Requirements for 45-65 nm TechnologyRamalingam, S. / Zhong, Q. / Yamaguchi, Y. / Lee, C. et al. | 2004
- 145
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High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVDKosku, N. / Miyazaki, S. et al. | 2004
- 151
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Deposition of Titanium-Silicon-Nitride Films for ULSI Cu Diffusion Barrier Application by Flow Modulation Chemical Vapor DepositionShin, Y.-H. / Ishii, T. / Shimogaki, Y. et al. | 2004
- 157
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Optimization of Etching and Ashing Process for Damascene Formation using Porous MSQ FilmKubota, K. / Asako, R. / Tahara, S. / Okamoto, S. / Maekawa, K. / Hinata, K. et al. | 2004
- 163
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Polymer Deposition and Radical Composition in Fluorocarbon Plasma SourcesNakamura, K. / Sugai, H. / Tatsumi, T. / Ando, A. / Oshima, K. et al. | 2004
- 169
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Measurements of Electron Density in Low-Density/High-Pressure Plasmas with Surface Wave ProbesNakamura, K. / Sugai, H. / Toyoda, N. / Kawahara, J. / Kiso, O. / Kinoshita, K. et al. | 2004
- 175
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Numerical Simulation of Long Surface Wave Produced Plasma CableAhmad, S. / Baba, K. / Nakamura, K. / Ikezawa, S. et al. | 2004
- 181
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Negative Bias Etching for ArF ProcessChiba, Y. / Okamoto, S. / Kubota, K. / Hinata, K. et al. | 2004
- 187
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Plasma Non-Uniformities Due to Electromagnetic Effects in Large Area Capacitive DischargesChabert, P. / Perret, A. / Raimbault, J.-L. / Rax, J.-M. / Lieberman, M. A. et al. | 2004
- 193
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Behavior of Flaked Particles in a Magnetically Enhanced Reactive Ion Etching EquipmentMoriya, T. / Nagaike, H. / Shimada, M. / Okuyama, K. et al. | 2004
- 199
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CD-Uniformity Control Knobs for the Dual-Frequency Gate EtcherChen, L. / Tsukamoto, Y. / Higuchi, F. / Hagihara, M. / Yamazawa, Y. / Tatsumi, T. / Kawashima, A. et al. | 2004
- 205
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Prediction of UV Radiation Damages in Several Insulator Films using On-wafer Monitoring TechniqueKato, Y. / Ishikawa, Y. / Okigawa, M. / Samukawa, S. et al. | 2004
- 211
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Plasma-Resistant GlassArai, K. / Hashimoto, S. / Takahata, T. et al. | 2004
- 217
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New Ash Challenges for Porous Low-k Integration: Trade-off between Sidewall Film Modification and Increase in k ValuePosseme, N. / David, T. / Chevolleau, T. / Vallier, L. / Meininger, P. / Louveau, O. / Fayolle, M. / Joubert, O. et al. | 2004
- 223
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Controlling Low-k Damage During in situ Photoresist StripHudson, E. A. / Choi, T. / Turmel, O. / Zheng, L. / Takeshita, K. / Lee, S. / Marakhtanov, A. / Cirigliano, P. et al. | 2004
- 229
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Dry Etching Damage in Porous Silica Low-k Films and its Recovery by Organosiloxane Vapor TreatmentOno, T. / Kinoshita, K. / Goto, T. / Takahashi, H. / Fujii, N. / Sonoda, Y. / Oku, Y. / Kohmura, K. / Hata, N. / Kikkawa, T. et al. | 2004
- 235
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Quantitative Control of Plasma-surface Interactions for Low-k/Cu IntegrationTatsumi, T. / Oshima, K. / Yatsuda, K. / Shibahara, T. / Nagahata, K. / Saitoh, T. / Okamoto, M. / Kiyonobu, Y. / Hanada, K. / Nogami, Y. et al. | 2004
- 241
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Highly Selective Si~3N~4/SiOC Etching using Dual Frequency Superimposed (DFS) rf Capacitive Coupled PlasmaTakase, A. / Nishiwaki, J. / Yamamoto, K. / Kojima, A. / Sakai, I. / Hayashi, H. / Ohiwa, T. et al. | 2004
- 247
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In-situ N~2 Plasma Treatment for Cu Surface Control in Dual Damascene SchemeTomohisa, S. / Sakamori, S. / Yoshikawa, K. / Yonekura, K. / Fujiwara, N. / Tsujimoto, K. / Nishioka, K. / Kobayashi, H. / Oomori, T. et al. | 2004
- 253
-
Advanced Neutral Beam Etching for Future Nano-Scale DevicesSamukawa, S. / Noda, S. / Kubota, T. et al. | 2004
- 261
-
High-speed Si etching and Related Process IntegrationHashimoto, H. / Hamada, M. / Ono, K. / Harada, M. et al. | 2004
- 267
-
Microplasma Processes for MEMS ApplicationIchiki, T. / Ideno, T. / Tan, H. M. L. / Koidesawa, T. / Taura, R. et al. | 2004
- 275
-
Deep Si Etching and Successive Isotropic SiO~2 Etching for MEMS FabricationTanaka, M. / Nozawa, Y. / Murakami, S. / Kanao, H. / Takigawa, T. et al. | 2004
- 281
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MEMS Applications of Dry ProcessesEsashi, M. et al. | 2004
- 289
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Design and Synthesis of Nano-Structured Film by PVD ProcessingHan, J. G. / Myung, H. S. et al. | 2004
- 293
-
Nitridation Process by Microwave Excited Plasma to Form Ultra Thin Gate DielectricsNakanishi, T. / Nakayama, T. / Sato, Y. / Katsuki, J. / Ozaki, S. et al. | 2004
- 299
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Mechanism of Post-etch Corrosion on TiN SurfaceFukumizu, H. / Saito, S. / Honda, S. / Sakai, I. / Hayashi, H. / Ohiwa, T. et al. | 2004
- 305
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Fabrication of 7-nm Nanocolumn Structure using Ferritin Iron-Core Masks and Highly Anisotropic Neutral Beam EtchingKubota, T. / Baba, T. / Kawashima, H. / Uraoka, Y. / Fuyuki, T. / Yamashita, I. / Samukawa, S. et al. | 2004
- 311
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Dry Etching Technology for Magnetoresistive Random Access MemoryKimura, T. / Yamagishi, H. / Shoji, M. / Motoyoshi, M. / Ando, A. / Tatsumi, T. / Shinohara, K. et al. | 2004
- 317
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Plasma Enhanced Deposition of High Dielectric Constant Materials on SiliconChang, J. P. et al. | 2004
- 325
-
Novel Chemical Vapor Deposition of Spherically Oxidized Nanocrystaline Silicon (nc-Si) Quantum Dot MultilayerKumagai, A. / Numazawa, Y. / Murao, Y. / Sato, T. / Koshida, N. et al. | 2004
- 331
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Hydrogen Ion Drift into Underlying Oxides by Rf Bias during High-Density Plasma Chemical Vapor DepositionYamaguchi, T. / Sawada, M. / Asai, K. / Kobayashi, K. / Yoneda, M. et al. | 2004
- 337
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Metal Chloride Reduction Chemical Vapor Deposition of TaN Thin FilmsOgura, Y. / Ooba, Y. / Hatayama, K. / Sakamoto, H. et al. | 2004
- 341
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Characterization of SiO~2 Films Deposited by VUV-CVD using OMCTS PrecursorToshikawa, K. / Miyano, J. / Yagi, Y. / Yokotani, A. / Kurosawa, K. et al. | 2004
- 347
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Effects of Solvent on Properties of Cu Films Prepared by HAPCVD using Cu (EDMDD)~2Takenaka, K. / Kaji, T. / Koga, K. / Shiratani, M. / Watanabe, Y. / Shingen, T. et al. | 2004
- 353
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Integrated Modeling of High Aspect Ratio Contact Etching Process and Stress Analysis for Nano-Scale MemoryLee, Y.-R. / Kim, T.-K. / Chung, W.-Y. / Kim, Y.-T. / Cho, Y.-K. / Kim, Y.-J. / Park, Y.-K. / Kong, J.-T. et al. | 2004
- 359
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Dual Frequency Bias Power Benefits on Dielectric Etch ChamberLiu, J. / Wang, J. / Lee, W. S. / Shannon, S. / Kim, J. M. / Shin, T. / Shoji, S. / Detrick, T. / Pu, B. / Shieh, B. et al. | 2004
- 365
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Development of Damage Free HfAlO Removal Process using Plasma TreatmentSun, J. W. / Shin, C. H. / Min, G. J. / Kang, C. J. / Cho, H. K. / Moon, J. T. et al. | 2004
- 369
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Selective Etching of HfO~2 High-k Gate Material over Si in C~4F~8/Ar/H~2 PlasmasTakahashi, K. / Ono, K. et al. | 2004