High-pressure oxygen treatment of ZnO thin films (English)
- New search for: Kim, B. I.
- New search for: Kim, S. C.
- New search for: Shin, B. C.
- New search for: Kim, T. S.
- New search for: Jung, M. Y.
- New search for: Yu, Y. S.
- New search for: Kim, B. I.
- New search for: Kim, S. C.
- New search for: Shin, B. C.
- New search for: Kim, T. S.
- New search for: Jung, M. Y.
- New search for: Yu, Y. S.
- New search for: Oshiyama, Atushi
In:
Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23
;
752-755
;
2006
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ISSN:
- Conference paper / Print
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Title:High-pressure oxygen treatment of ZnO thin films
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Contributors:Kim, B. I. ( author ) / Kim, S. C. ( author ) / Shin, B. C. ( author ) / Kim, T. S. ( author ) / Jung, M. Y. ( author ) / Yu, Y. S. ( author ) / Oshiyama, Atushi
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Conference:23rd, Proceedings of the 23rd international conference on defects in semiconductors, ICDS-23 ; 2005 ; Awaji Island, Japan
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Published in:PHYSICA B ; 376-377 ; 752-755
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Publisher:
- New search for: Elsevier
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Publication date:2006-01-01
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Size:4 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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