Monte Carlo simulations of Formula Not Shown -doping placement in sub-100 nm implant free InGaAs MOSFETs (English)
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In:
From strained silicon to nanotubes: novel channels for field effect devices
3
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285-288
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2006
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ISSN:
- Conference paper / Print
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Title:Monte Carlo simulations of Formula Not Shown -doping placement in sub-100 nm implant free InGaAs MOSFETs
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Contributors:Kalna, K. ( author ) / Wang, Q. ( author ) / Passlack, M. ( author ) / Asenov, A. ( author ) / Frank, Martin M. / European Materials Research Society / International Union of Materials Research Societies / ICEM
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Conference:Symposium; 2006 May, From strained silicon to nanotubes: novel channels for field effect devices
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Published in:MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135, 3 ; 285-288
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Publisher:
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Publication date:2006-01-01
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Size:4 pages
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Remarks:Held as Symposium B of the E-MRS IUMRS ICEM Spring meeting.
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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