Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications (English)
- New search for: Lin, Y. S.
- New search for: Liang, H. B.
- New search for: Chiu, H. W.
- New search for: Liu, K.
- New search for: Wu, H. H.
- New search for: Lu, S. S.
- New search for: Lin, M. S.
- New search for: IEEE Electron Devices Society
- New search for: Lin, Y. S.
- New search for: Liang, H. B.
- New search for: Chiu, H. W.
- New search for: Liu, K.
- New search for: Wu, H. H.
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In:
Electron devices and solid-state circuits; EDSSC '05
;
47-52
;
2006
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ISBN:
- Conference paper / Print
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Title:Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications
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Contributors:Lin, Y. S. ( author ) / Liang, H. B. ( author ) / Chiu, H. W. ( author ) / Liu, K. ( author ) / Wu, H. H. ( author ) / Lu, S. S. ( author ) / Lin, M. S. ( author ) / IEEE Electron Devices Society
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Conference:Conference, Electron devices and solid-state circuits; EDSSC '05 ; 2005 ; Hong Kong, China
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Published in:
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Publisher:
- New search for: IEEE,
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Place of publication:[Piscataway, N.J.]:
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Publication date:2006-01-01
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Size:6 pages
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Remarks:"IEEE Catalog Number: 05TH8831."
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Breaker pages| 2005
- 3
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Implementing a Successful Business Model for the IC Design Industry in ChinaKo, P. K. / IEEE Electron Devices Society et al. | 2006
- 3
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Implementing a Successful Business Model for the IC Industry in ChinaKo, P.K. et al. | 2005
- 5
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Novel Device structures for Sub-25nm GenerationJun Yuan, / Venkaragirish, N. / Jhaveri, R. / Tura, A. / Woo, J.C.S. et al. | 2005
- 9
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Ultra-Low Voltage Analog Design Techniques for Nanoscale CMOS TechnologiesKinget, P. / Chatterjee, S. / Tsividis, Y. et al. | 2005
- 17
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Opportunities and Challenges of Emerging Nanotechnologies for Future High-Speed and Low Power Logic Applications (invited)Chau, R. / IEEE Electron Devices Society et al. | 2006
- 17
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Opportunities and Challenges of Emerging Nanotechnologies for Future High-Speed and Low-Power Logic ApplicationsChau, R. et al. | 2005
- 19
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Orientation-Dependent Energy Bandstructure Calculation for Silicon Nanowires Using Supercell Approach with the Tight-Binding MethodXimeng Guan, / Zhiping Yu, et al. | 2005
- 23
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Gate-controlled rectifying behavior in C70@SWNTs networksAo Guo, / Yunyi Fu, / Jia Liu, / Lunhui Guan, / Zujin Shi, / Zhennan Gu, / Ru Huang, / Xing Zhang, et al. | 2005
- 27
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Effects of Parasitic MOSFETs and Traps on Charge Transport Properties of Germanium Quantum Dot Single Electron/Hole TransistorsLai, W.T. / Liao, W.M. / Kuo, M.T.D. / Li, P.W. et al. | 2005
- 33
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Technology Platform Based On Comprehensive Device Modeling For RF SoC DesignYuhua Cheng, et al. | 2005
- 33
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Technology Platform Based on Comprehensive Device Modeling for RF SoC Design (invited)Cheng, Y. / IEEE Electron Devices Society et al. | 2006
- 39
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Modeling of Low-Frequency Noise in Junction Field-Effect Transistor with Self-Aligned Planer TechnologyYue Fu, / Hei Wong, / Liou, J.J. et al. | 2005
- 43
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A Holistic Model for Mobility Enhancement through Process-Induced StressMohan V. Dunga, et al. | 2005
- 47
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Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System ApplicationsYo-Sheng Lin, / Hsiao-Bin Liang, / Hung-Wei Chiu, / Liu, K. / Hsin-Hong Wu, / Shey-Shi Lu, / Mou-Shiung Lin, et al. | 2005
- 53
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Wide Tuning Range of A CMOS RF Bandpass Filter For Wireless ApplicationsZhiqiang Gao, / Mingyan Yu, / Yizheng Ye, / Jianguo Ma, et al. | 2005
- 57
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Design of Balanced RF Filter for Wireless Applications Using FBAR TechnologyHao Jin, / Shurong Dong, / Demiao Wang, et al. | 2005
- 61
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Low Power High Linearity Driver Amplifier for 1.9 GHz WCDMA ApplicationsLe, V.H. / Nguyen, T.K. / Han, S.K. / Lee, S.G. et al. | 2005
- 63
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Variable Inductance Planar Spiral Inductors and CMOS Wideband Amplifiers with Inductive PeakingYo-Sheng Lin, / Hsiao-Bin Liang, / Jia-Lun Chen, / Ke-Hou Chen, / Shey-Shi Lu, et al. | 2005
- 69
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Dimensional and Other New Effects in Advanced SOI Devices (invited)Cristoloveanu, S. / IEEE Electron Devices Society et al. | 2006
- 69
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Dimensional and Other New Effects in Advanced SOI DevicesCristoloveanu, S. et al. | 2005
- 75
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Subthreshold Behavior of Undoped DG MOSFETs (invited)Sanchez, F. J. G. / Conde, A. O. / Muci, J. / IEEE Electron Devices Society et al. | 2006
- 75
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Subthreshold Behavior of Undoped DG MOSFETsGarcla-Satnchez, F.J. / Ortiz-Conde, A. / Muci, J. et al. | 2005
- 81
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Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices (invited)Huang, R. / Tian, Y. / Xiao, H. / Bu, W. / Feng, C. / Chan, M. / Zhang, X. / Wang, Y. / IEEE Electron Devices Society et al. | 2006
- 81
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Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled DevicesRu Huang, / Yu Tian, / Han Xiao, / Weihai Bu, / Chuguang Feng, / Mansun Chan, / Xing Zhang, / Yangyuan Wang, et al. | 2005
- 87
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RF Performance and Scaling Capability of Thin-body GOI and SOI MOSFETsXia An, / Ru Huang, / Jing Zhuge, / Xing Zhang, / Yangyuan Wang, et al. | 2005
- 91
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The impact of mobility modulation technology on device performance and reliability for sub-90nm SOI MOSFETsYeh, W.-K. / Lai, C.-M. / Lin, C.-T. / Fang, Y.-K. / Hu, H.-H. / Chen, K.-M. / Huang, G.-W. et al. | 2005
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CGS(D)/CS(D)GCapacitance Phenomenon of 100nm Fully-Depleted SOI CMOS Devices with HfO2High-K Gate Dielectric Considering Vertical and Fringing Displacement EffectsYu-Sheng Lin, / Chia-Hong Lin, / Kuo, J.B. / Ker-Wei Su, et al. | 2005
- 101
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Advanced Germanium MOS Devices and Technology (invited)Chui, C. O. / Sarawat, K. C. / IEEE Electron Devices Society et al. | 2006
- 101
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Advanced Germanium MOS Devices and TechnologyChi On Chui, / Saraswat, K.C. et al. | 2005
- 107
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Metal Gate/High-K Dielectric Stack on Si Cap/Ultra-Thin Pure Ge epi/Si SubstrateChia Ching Yeo, / Lee, M.H. / Liu, C.W. / Choi, K.J. / Lee, T.W. / Cho, B.J. et al. | 2005
- 111
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A Simulation Study of FIBL in Ge MOSFETs with High-k Gate DielectricsTan, Y. P. / Lau, J. M. K. / Zhang, Q. / Wu, N. / Zhu, C. / IEEE Electron Devices Society et al. | 2006
- 111
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Simulation Study of FIBL in Ge MOSFETs with High-k Gate DielectricsYoke Ping Tan, / James, M.-K.L. / Qingchun Zhang, / Nan Wu, / Chunxiang Zhu, et al. | 2005
- 115
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Suppressed Growth of Interlayer GeOxin Ge MOS Capacitors with Gate Dielectric Prepared in Wet NO AmbientLai, P.T. / Li, C.X. / Xu, J.P. / Zou, X. / Chan, C.L. et al. | 2005
- 119
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Optimization of p-MOSFETs Featuring Uniaxial Stress Induced by Si1-χGeχSource/Drain and SDEJiahui Yuan, / Guangping Zhu, / Jinpeng Wang, / Jianping Zou, / Lilin Tian, et al. | 2005
- 119
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Optimization of p-MOSFETs Featuring Uniaxial Stress Induced by Si~1~-~xGe~x Source/Drain and SDEYuan, J. / Zhu, G. / Wang, J. / Zou, J. / Tian, L. / IEEE Electron Devices Society et al. | 2006
- 123
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Threshold Voltage Model of SiGe Channel pMOSFET without Si Cap LayerZou, X. / Li, C.X. / Xu, J.P. / Lai, P.T. / Chen, W.B. et al. | 2005
- 129
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Dual-Mode Voltage-Controlled Oscillator with Injection LockZhiming Deng, / Niknejad, A.M. et al. | 2005
- 133
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Electronically Tunable Quadrature Oscillator Using Current-controlled Voltage ConveyorsPiyatat, T. / Tangsrirat, W. / Surakampontorn, W. et al. | 2005
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- 141
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- 145
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Variable Negative Gm Technique for RF LC VCO with Very Large Tuning RangeShi, H. / Liu, J.H. / Zhang, G.Y. / Liao, H.L. / Huang, R. / Wang, Y.Y. et al. | 2005
- 149
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A Novel Jitter Measurement Method with Built-In Oscillation Test Structure for Phase Locked LoopsXia, T. / Chen, Z.J. / Jia, S. et al. | 2005
- 155
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Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron SpectroscopyNohira, H. / Shinagawa, S. / Kase, M. / Maruizumi, T. / Hattori, T. et al. | 2005
- 155
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Nondestructive Depth Profiling of Gate Insulators by Angle-Resolved Photoelectron Spectroscopy (invited)Nohira, H. / Shinagawa, S. / Kase, M. / Maruizumi, T. / Hattori, T. / IEEE Electron Devices Society et al. | 2006
- 161
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Lanthanum Oxide for Gate Dielectric Insulator (invited)Kakushima, K. / Tsutsui, K. / Hattori, T. / Iwai, H. / IEEE Electron Devices Society et al. | 2006
- 161
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Lanthanum Oxide for Gate Dielectric InsulatorKakushima, K. / Tsutsui, K. / Hattori, T. / Iwai, H. et al. | 2005
- 167
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Nanoanalytical Characterization of Breakdown Spots in Ultrathin Gate DielectricsPey, K.L. / Tung, C.H. / Lo, V.L. / Ranjan, R. / Ang, D.S. et al. | 2005
- 167
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Nanoanalytical Characterization of Breakdown Spots in Ultrathin Gate Dielectrics (invited)Pey, K. L. / Tung, C. H. / Lo, V. L. / Ranjan, R. / Ang, D. S. / IEEE Electron Devices Society et al. | 2006
- 173
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Effects of Ambient Temperature on the Electrical Characteristics of Thin La2O3Film Grown by E-Beam EvaporationBanani Sen, / Hei Wong, / Molina, J. / Sarkar, C.K. / Iwai, H. / Ng, J.A. et al. | 2005
- 177
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Low Temperature and High Concentration Ozone Prepared Ultra-thin HfO2Dielectric FilmsWang, L. / Xue, K. / Xu, J.B. / Huang, A.P. / Chu, P.K. et al. | 2005
- 181
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PCA-based Neural Network Modeling of MBE-grown HfO2Thin Film CharacteristicsKo, Y.-D. / Lee, J.H. / Kweon, K.E. / Moon, T.-H. / Myoung, J.-M. / Yun, I. et al. | 2005
- 185
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Local Study of DC and Dynamic Electrical Stress Induced Ultrathin Gate Oxide Soft-Breakdown by Scanning Tunneling MicroscopyXue, K. / An, J. / Wang, L. / Yu, X.J. / Ho, H.P. / Xu, J.B. et al. | 2005
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A Single-bias 2W PHEMT MMIC by Gate Zero-Bias Technique for C Band ApplicationsLin, C.H. / Liu, H.Z. / Huang, H.K. / Chu, C.K. / Houng, M.P. / Wang, Y.H. / Liu, C.C. / Chang, C.H. / Wu, C.L. / Chang, C.S. et al. | 2005
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An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode LinearizerZhu, M. / Yang, H. / Zhang, H.Y. / Liu, X.C. et al. | 2005
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Comparison of InGaP-with AlGaAs-gated Low Noise PHEMTs by Current-Dependent Hot-Electron StressesHuang, H.K. / Chang, C.P. / Houng, M.P. / Wang, Y.H. et al. | 2005
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A Low Jitter 0.2 μm PHEMT 20 Gb/s 1:2 DemultiplexerJingfeng Ding, / Zhigong Wang, / Yinghua Qiu, / Gui Wang, et al. | 2005
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A Low Jitter 0.2 mum PHEMT 20 Gb/s 1:2 DemultiplexerDing, J. / Wang, Z. / Qiu, Y. / Wang, G. / IEEE Electron Devices Society et al. | 2006
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A Self-bias Ku-band 1-Watt PHEMT Power Amplifier MMIC With A Compact Source CapacitorLiu, H.Z. / Lin, C.H. / Chu, C.K. / Huang, H.K. / Houng, M.P. / Wang, Y.H. / Chang, C.H. / Wu, C.L. / Chang, C.S. et al. | 2005
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A Gate Zero-Bias 2W PHEMT Power Amplifier Operating at 3.5 GHzChu, C.K. / Huang, H.K. / Liu, H.Z. / Lin, C.H. / Houng, M.P. / Wang, Y.H. / Chang, C.H. / Wu, C.L. / Chang, C.S. et al. | 2005
- 217
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A Fine-Tuned Low-Power LNA for Lower-Band UWB TransceiverHaolu Xie, / Wang, A. et al. | 2005
- 217
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A Fine-Tuned Low-Power LNA for Lower-Band UWB Transceiver (invited)Xie, H. / Wang, A. / IEEE Electron Devices Society et al. | 2006
- 221
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A 0.25μm CMOS Low Power RF Multiplier for Ultra-wide Band System ApplicationsTian Tong, / Chih-An Lin, / Jensen, O.K. / Mikkelsen, J.H. / Larsen, T. et al. | 2005
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A 0.25mum CMOS Low Power RF Multiplier for Ultra-wide Band System ApplicationsTong, T. / Lin, C. A. / Jensen, O. K. / Mikkelsen, J. H. / Larsen, T. / IEEE Electron Devices Society et al. | 2006
- 225
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An Integrated CMOS Low Noise Amplifier for 3-5 GHz UWB ApplicationsShih-Chih Chen, / Ruey-Lue Wang, / Ming-Lung Kung, / Hsiang-Chen Kuo, et al. | 2005
- 229
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A 1.8V 250MHz CMOS Programmable Gain Filter for Ultra-wideband Transmitter SystemChih-Chang Lee, / Gin-Kou Ma, et al. | 2005
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A Low Power CMOS Full-Band UWB Power Amplifier Using Wideband RLC Matching MethodHan Chou Hsu, / Zhi Wei Wang, / Gin Kou Ma, et al. | 2005
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A Fully Integrated SiGe Low Noise Amplifier for 3-5GHz Ultra-WideBand RadioLi Yang, / Huailin Liao, / Guoyan Zhang, / Ru Huang, / Xing Zhang, et al. | 2005
- 243
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Device Simulation in Nanoelectronic Era (invited)Yu, Z. / IEEE Electron Devices Society et al. | 2006
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Device Simulation in Nanoelectronic EraZhiping Yu, et al. | 2005
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A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs (invited)He, J. / Xing, Z. / Wang, Y. / IEEE Electron Devices Society et al. | 2006
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A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETsJin He, / Zhang Xing, / Yangyuan Wang, et al. | 2005
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A 2-D Threshold-Voltage Model for Small MOSFET with Quantum-Mechanical EffectsXu, J.P. / Li, Y.P. / Lai, P.T. / Chen, W.B. / Xu, S.G. et al. | 2005
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Explicit Analytical Charge-Based Model of Asymmetrical Double Gate MOSFETReyboz, M. / Rozeau, O. / Poiroux, T. / Martin, P. / Lecarval, G. / Jomaah, J. et al. | 2005
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A Precise Bandgap Reference with High PSRRShen Hui, / Wu Xiaobo, / Yan Xiaolang, et al. | 2005
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A Programmable Robust Current Reference in ROIC with Low Working TemperatureJu Tang, / Liu, D. / Zhongjian Chen, / Xing Zhang, / Lijiu Ji, et al. | 2005
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A Digital PWM Regulator Based on Serial-Error Correcting Mechanism for DC-DC Buck ConversionHuang, P.J.W. / Tu, S.H.L. et al. | 2005
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A Smart Hot Swap Controller IC designXiaolong Yuan, / Xiaobo Wu, / Menglian Zhao, / Xiaolang Yan, et al. | 2005
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Performance Trends of Si-Based RF Transistors (invited)Swchierz, F. / Schippel, C. / IEEE Electron Devices Society et al. | 2006
- 299
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Performance Trends of Si-Based RF TransistorsSchwierz, F. / Schippel, C. et al. | 2005
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Investigation of RF Performance of Nano-Scale Ultra-Thin-Body Schottky-Barrier MOSFETs Using Monte Carlo SimulationZhiliang Xia, / Gang Du, / Xiaoyan Liu, / Jinfeng Kang, / Ruqi Han, et al. | 2005
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Novel ultra-low power RF Lateral BJT on SOI-CMOS compatible substrateSun, I.-S.M. / Wai Tung Ng, / Mochizuki, H. / Kanekiyo, K. / Kobayashi, T. / Toita, M. / Imai, H. / Ishikawa, A. / Tamura, S. / Takasuka, K. et al. | 2005
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Parasitic Minimization in RF Multi-Fin FETsWen Wu, / Zhikuan Zhang, / Mansun Chan, et al. | 2005
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Low-voltage embedded RAMs in the nanometer eraKawahara, T. et al. | 2005
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Low-Voltage Embedded RAMs in Nanometer Era (invited)Kawahara, T. / IEEE Electron Devices Society et al. | 2006
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Multi-disciplinary Requirements for Accurate Simulation of Power Conversion System DesignLuk, T.W. / Hall, J. / Newberry, W. et al. | 2005
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- 475
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A Design of AM-OLED Source Driver with reduced Programming Time for a Large Scale Display PanelJang Woo Ryu, / Ey Goo Kang, / Hyung Seok Park, / Man Young Sung, et al. | 2005
- 479
-
Enhancement of Extraction Efficiency in Laser-debonded GaN Light Emitting DiodesChan, C.P. / Yue, T.M. / Surya, C. / Ng, A.M.C. / Djurisic, A.B. / Scholz, F. / Liu, C.K. / Li, M. et al. | 2005
- 483
-
Investigation of Z-shaped Photoluminescence of Exciton in ZnO Single-crystal MicrotubesLiu, N. / Li, Y.R. / Deng, H. / Sun, Y.S. / Zhou, X. / Wu, H.J. et al. | 2005
- 487
-
Polymer and Small Molecules Light Emitting Diodes - A Technology for Large Area Low Information Contents DisplaysAnand, R. / Giri, A. / Prasad, R. et al. | 2005
- 493
-
ESD Protection Design for Mixed-Voltage I/O Interfaces -- OverviewMing-Dou Ker, / Kun-Hsien Lin, et al. | 2005
- 493
-
ESD Protection Design for Mixed-Voltage I/O Interfaces - Overview (invited)Ker, M. D. / Lin, K. H. / IEEE Electron Devices Society et al. | 2006
- 499
-
Methodology to Evaluate the Robustness of Integrated Circuits under Cable Discharge EventTai-Xiang Lai, / Ming-Dou Ker, et al. | 2005
- 503
-
lGb/s Ground Referenced Low Voltage Differential Signal I/O Interface in 0.35μm CMOSYu-Sheng Tiao, / Meng-Lieh Sheu, / Yen-Po Chen, et al. | 2005
- 503
-
1Gb/s Ground Referenced Low Voltage Differential Signal I/O Interface in 0.35 mum CMOSTiao, Y. S. / Sheu, M. L. / Chen, Y. P. / IEEE Electron Devices Society et al. | 2006
- 507
-
A New Failure Mechanism of Gate-grounded MOSFET ESD Device in 90 nm TechnologyZhang, L. F. / Liao, C. C. / Liu, W. / Wong, W. / IEEE Electron Devices Society et al. | 2006
- 507
-
A New Failure Mechanism of Gate-grounded MOSFET ESD Device in 9Onm TechnologyLi-Fei Zhang, / Chin-Chang Liao, / Wei Liu, / Waisum Wong, et al. | 2005
- 511
-
ESD Protection Circuit with Separated GGNMOS Segment for Input ProtectionSang Joon Hwang, / Chang Hun Lee, / Min Chul Jung, / Man Young Sung, et al. | 2005
- 515
-
Full Parasitic Capacitance Model of Diode-Class ESD Protection Structures for Mix-Signal and RF ICsWang Yuan, / Jia Song, / Chen Zhongjian, / Ji Lijiu, et al. | 2005
- 521
-
Current Differencing Buffered Amplifier Based Multiple-output Biquadratic FiltersPisitchalermpong, S. / Pukkalanun, T. / Tangsrirat, W. / Surakampontorn, W. et al. | 2005
- 525
-
Electronically Tunable Active-only Current-mode Integrator and Its ApplicationsPukkalanun, T. et al. | 2005
- 529
-
Low Passive Component-Count Current Follower-Based Current-Mode Second-Order Notch FilterPrasertsom, D. / Pukkalanun, T. / Tangsrirat, W. / Surakampontom, W. et al. | 2005
- 533
-
Low-Voltage Analog Circuit Techniques Using Bias-Current Re-Utilization, Self-Biasing and Signal SuperpositionHoi Lee, / Ka Nang Leung, / Mok, P.K.T. et al. | 2005
- 537
-
A Fully Balanced Fifth-Order Low-Pass Chebyshev Filter Based On Quasi-Floating Gate TransistorsBao-jun Zhang, / Yin-tang Yang, / Hai-jun Zhang, et al. | 2005
- 541
-
A Low Power Receiver Architecture for Mobile Biomedicine SystemsFong, B. / Fong, A.C.M. / Hong, G.Y. et al. | 2005
- 547
-
A Compact Analytical Two-Dimensional Threshold Voltage Model for Cylindrical, Fully-Depleted, Surrounding-Gate (SG) MOSFETs (invited)Chiang, T. K. / IEEE Electron Devices Society et al. | 2006
- 547
-
A Compact, Analytical Two-dimensional Threshold Voltage Model for Cylindrical, Fully-depleted, Surrounding-Gate(SG) MOSFETsChiang, T.K. et al. | 2005
- 551
-
Simulation Study of Charge Imbalance in Super-junction Power MOSFETKondekar, P.N. et al. | 2005
- 555
-
An Analytical Parameter Extraction of the Small-Signal Model for RF MOSFETsChi, Y.S. / Lu, J.X. / Zhang, S.Y. / Wu, Z.J. / Huang, F.Y. et al. | 2005
- 559
-
Simulation of MOSFET Devices and Circuits Fabricated on Selective Buried Oxide (SEL-BOX) SubstratesPal, C. / Mazhari, B. / Iyer, S.S.K. et al. | 2005
- 565
-
An Opportunistic Source Line Driving Scheme for Low Power Mobile TFT-LCD Driver ICJae-Goo Lee, / Jae-Hyuck Woo, / Bai-Sun Kong, / Young-Hyun Jun, / Chil-Gee Lee, / Im-Soo Kang, / Bong-Nam Kim, / Jin-Tae Kim, et al. | 2005
- 567
-
Enhanced Mobility for Pentacene TFT Built on NH3- Annealed Thermally Grown SiO2Kwan, M.C. / Cheng, K.K.H. / Lai, P.T. / Che, C.M. et al. | 2005
- 571
-
An analytical model for organic thin film transistorsLing Li, / Kosina, H. et al. | 2005
- 575
-
Fabrication and Electrical Characteristics of AgTCNQ Crossbar Switches for Organic Molecular Memories and LogicsTu, D.Y. / Wang, C.S. / Ji, Z.Y. / Hu, W.P. / Liu, M. et al. | 2005
- 581
-
A Fast-settling Temperature-Insensitive Voltage BufferZhang Yacong, / Chen Zhongjian, / Lu Wengao, / Gao Jun, / Ji Lijiu, / Zhao Baoying, et al. | 2005
- 585
-
Low Power Design of Column Readout Stage for 320x288 Snapshot Infrared ROICLiu Dan, / Tang Ju, / Lu Wengao, / Chen Zhongjian, / Zhao Baoying, / Ji Lijiu, et al. | 2005
- 589
-
A TDI CMOS Readout Circuit for IRFPA with Linearity ImprovementZhang Yacong, / Liu Dan, / Lu Wengao, / Chen Zhongjian, / Ji Lijiu, / Zhao Baoying, et al. | 2005
- 593
-
Clock-Feedthrough Cancellation with Compensation Circuit for Switched-Current SystemsRo-Min Weng, / Chung-Wei Lai, et al. | 2005
- 599
-
An Analytic Theory of Dielectric and Optic Nonlinear Effects of FerroelectricsChuanren Yang, / Wenjian Leng, / Chunlin Fu, / Hongwei Chen, / Liye Hu, / Jihua Zhang, / Jiaxuan Liao, et al. | 2005
- 599
-
An Analytic Theory of Dielectric and Optic Nonlinear Effect of Ferroelectrics (invited)Yang, C. / Leng, W. / Fu, C. / Chen, H. / Hu, L. / Zhang, J. / Liao, J. / IEEE Electron Devices Society et al. | 2006
- 605
-
Effects of oxidation temperature on Ga2O3film thermally grown on GaNLimin Lin, / Yi Luo, / Lai, P.T. / Kei May Lau, et al. | 2005
- 609
-
InGaP PHEMT with a Liquid Phase Oxidized InGaP as Gate DielectricKuan-Wei Lee, / Po-Wen Sze, / Kai-Lin Lee, / Mau-Phon Houng, / Yeong-Her Wang, et al. | 2005
- 613
-
InA1As/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InA1As as Gate DielectricKai-Lin Lee, / Kuan-Wei Lee, / Men-Hsi Tsai, / Po-Wen Sze, / Mau-Phon Houng, / Yeong-Her Wang, et al. | 2005
- 613
-
InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with a Liquid Phase Oxidized InAlAs as Gate DielectricLee, K. L. / Lee, K. W. / Tsai, M. H. / Sze, P. W. / Houng, M. P. / Wang, Y. H. / IEEE Electron Devices Society et al. | 2006
- 617
-
Thickness Dependences of Phase Change and Channel Current Control in Phase-Change Channel TransistorYin, Y. / Miyachi, A. / Niida, D. / Sone, H. / Hosaka, S. et al. | 2005
- 621
-
Integration Design of Chip and Package for Cost-Effective High-Speed ApplicationsNansen Chen, / Hongchin Lin, / Nan-Cheng Chen, / Wu, R. / Chou, T. / Chien, H. et al. | 2005
- 627
-
A Novel Capacitive Sensing Scheme for Fingerprint AcquisitionMeng-Lieh Sheu, / Chih-Kuan Lai, / Wei-Hung Hsu, / Hong-Ming Yang, et al. | 2005
- 631
-
A CMOS Readout Circuit for LTPS-TFT Capacitive Fingerprint SensorYu-Sheng Tiao, / Meng-Lieh Sheu, / Shi-Min Wu, / Hong-Ming Yang, et al. | 2005
- 635
-
A Differential Readout Circuit for Tin Oxide Gas Sensor ArrayGuo, B. / Bermak, A. et al. | 2005
- 639
-
A Noise Immunity Effective Read-Out Architecture for Uncooled Infrared DetectorSang Joon Hwang, / Seung Woo Hong, / Sang Won Park, / Jee Young Yoon, / Man Young Sung, et al. | 2005
- 643
-
Simulation of A Monolithically Integrated CMOS Bioamplifier for EEG RecordingsSui Xiaohong, / Liu Jinbin, / Gu Ming, / Pei Weihua, / Chen Hongda, et al. | 2005
- 647
-
A Simple Scheme of Current Amplification for Sensor ApplicationsChunyan Wang, et al. | 2005
- 653
-
Design ofA 16-bit Stereo Audio ΣΔA/D ConverterChen Lei, / Zhao Yuanfu, / Gao Deyuan, / Wen Wu, / Wang Zongmin, / Zhu Xiaofei, / Peng Heping, et al. | 2005
- 653
-
Design of A 16-bit Stereo Audio SigmaDelta A/D ConverterChen, L. / Zhao, Y. / Gao, D. / Wen, W. / Wang, Z. / Zhu, X. / Peng, H. / IEEE Electron Devices Society et al. | 2006
- 657
-
High Speed Low Power CMOS Comparator Dedicated to 10it, 20MHz Pipeline ADCs for RF ApplicationsGuermaz, M.B. / Bouzerara, L. / Slimane, A. / Belaroussi, M.T. / Lehouidj, B. / Zirmi, R. et al. | 2005
- 657
-
High Speed Low Power CMOS Comparator Dedicated to 10bit, 20MHz Pipeline ADCs for RF ApplicationsGuermaz, M. B. / Bouzerara, L. / Slimane, A. / Belaroussi, M. T. / Lehouidj, B. / Zirmi, R. / IEEE Electron Devices Society et al. | 2006
- 661
-
A CMOS-based Algorithmic ADCArayawat, S. / Chaikla, A. / Petcmaneelumka, W. / Riewruja, V. / Julsereewong, P. / Trisuwannawat, T. et al. | 2005
- 665
-
Low-Power and Hardware Efficient Decimation Filters in Sigma-Delta A/D ConvertersHengfang Zhu, / Xiaobo Wu, / Xiaolang Yan, et al. | 2005
- 669
-
On-Chip Built-In Self-Test of Video-Rate ADCs Using a 1.5 V CMOS Gaussian Noise GeneratorEvans, G. / Goes, J. / Paulino, N. et al. | 2005
- 673
-
Low-Power CMOS Folding and Interpolating ADC with a Serial-Parallel Domino EncoderZhen Liu, / Song Jia, / Zhongjian Chen, / Xing Zhang, / Lijiu Ji, et al. | 2005
- 679
-
Sub-50-nm Asymmetric Graded Low Doped Drain (AGLDD) Vertical Channel nMOSFETZhou, F.L. / Huang, R. / An, X. / Guo, A. / Xu, X.Y. / Zhang, X. / Zhang, D.C. / Wang, Y.Y. et al. | 2005
- 683
-
A MOS Transistor with Source/Drain on Insulator and Channel Doped in Step-Function ProfileDingyu Li, / Wei Ke, / Lei Sun, / Xiaoyan Liu, / Ruqi Han, / Shengdong Zhang, et al. | 2005
- 687
-
Performance of Channel Engineered SDODEL MOSFET for Mixed Signal ApplicationsSarkar, P. / Mallik, A. / Sarkar, C.K. / Rao, V.R. et al. | 2005
- 691
-
The Degradation Mode of Dual Metal-Gates/High-kappa CMOSFETs Induced by Bias-Temperature InstabilityLiao, C. C. / Wang, J. P. / Lao, M. / Wong, W. / IEEE Electron Devices Society et al. | 2006
- 691
-
The Degradation Mode of Dual Metal-Gates/High-K CMOSFETs Induced by Bias-Temperature InstabilityChin-Chang Liao, / Jian-Ping Wang, / Miao Liao, / Waisum Wong, et al. | 2005
- 695
-
Gate Leakage Properties of MOS Devices with Tri-Layer High-k Gate DielectricChen, W.B. / Xu, J.P. / Lai, P.T. / Li, Y.P. / Xu, S.G. et al. | 2005
- 699
-
Charge Collection in Impact Ionization MOS TransistorsWang, W. et al. | 2005
- 703
-
Single Band Electronic Conduction in Hafnium Oxide Prepared by Atomic Layer DepositionShaimeev, S. / Gritsenko, V. / Kukli, K. / Wong, H. / Lee, E.-H. / Kim, C. et al. | 2005
- 709
-
Two dimensional phase sensitive surface plasmon resonance biosensor array using microfluidic flow circuit platformChi Lok Wong, / Ho Pui Ho, / Kin Fong Lei, / Wen Jung Li, / Kwok Sum Chan, / Wing Cheung Law, / Shu Yuen Wu, / Siu Kai Kong, / Chinlon Lin, et al. | 2005
- 713
-
Second Generation Current Mode Active Pixel SensorWah, C.K. / Bermak, A. / Boussaid, F. et al. | 2005
- 717
-
Effects of gate-insulator nitridation gas on MISiC Schottky-diode hydrogen sensorsTang, W.M. / Leung, C.H. / Lai, P.T. / Xu, J.P. et al. | 2005
- 721
-
A Standard CMOS Compatible Monolithic Photo-Detector and Trans-impedance AmplifierHongda Chen, / Ming Gu, / Jiale Huang, / Peng Gao, / Luhong Mao, et al. | 2005
- 725
-
Bias Offset Correction Technique For Uncooled Infrared Bolometer Sensor Readout ICSang Won Park, / Sang Joon Hwang, / Jang Woo Ryu, / Seung Woo Hong, / Man Young Sung, et al. | 2005
- 729
-
Realization of an Integrated Planar LC Low-Pass Filter with Modified Surface Micromachining TechnologyFang, J. / Liu, Z.W. / Chen, Z.M. / Liu, L.T. / Li, Z.J. et al. | 2005
- 735
-
Area Efficient Low-Power Static Explicit-Pulsed Flip-Flop with Local FeedbackYeo, K.S. / Goh, W.L. / Phyu, M.W. et al. | 2005
- 739
-
Design and Implementation of Digital Up Converter for HomenetXiaoxin Cui, / Dunshan Yu, / Shimin Sheng, / Xiaole Cui, et al. | 2005
- 743
-
Power Modeling for CMOS Circuits by RBF NetworkQiang, W. / Cao, Y. / Yan, Y. / Gao, X. et al. | 2005
- 747
-
Monitoring of Switching Activity and Transition Times of Clock Signals in SoC Cells by Estimation of the Mean Value of IDD CurrentDziurdzia, P. et al. | 2005
- 751
-
A Low-Energy Asynchronous FFT/IFFT Processor for Hearing Aid ApplicationsKwen-Siong Chong, / Gwee, B.-H. / Chang, J.S. et al. | 2005
- 755
-
Bus-based IP Reusable Verification PlatformWenfa Zhan, / Rui Wang, / Duoli Zhang, / Bing Lu, et al. | 2005
- 761
-
Modeling of the Effects of Process Variations on Circuit Delay at 65nmHarish, B.P. / Patil, M.B. / Bhat, N. et al. | 2005
- 765
-
Optimized Nickel Suilicide Technology for Fully Depleted Nano-Scale SIO MOSFETsYun, J.G. / Oh, S.Y. / Kim, Y.J. / Lee, W.J. / Wang, T. / Tuya, A. / Ji, H.H. / Han, I.S. / Wang, J.S. / Lee, H.D. et al. | 2005
- 765
-
Optimized Nickel Silicide Technology for Fully Depleted Nano-Scale SOI MOSFETYun, J. G. / Oh, S. Y. / Kim, Y. J. / Lee, W. J. / Wang, T. / Tuya, A. / Ji, H. H. / Han, I. S. / Wang, J. S. / Lee, H. D. et al. | 2006
- 769
-
Analysis of GIDL Dependence on STI-induced Mechanical StressWenwei Yang, / Guoxuan Qin, / Xue Shao, / Zhiping Yu, / Lilin Tian, et al. | 2005
- 773
-
Anomalous Narrow Width Effect in NMOS and PMOS Surface Channel Transistors Using Shallow Trench IsolationLau, W.S. / See, K.S. / Eng, C.W. / Awl, W.K. / Jo, K.H. / Tee, K.C. / Lee, J.Y.M. / Quek, E.K.B. / Kim, H.S. / Chan, S.T.H. et al. | 2005
- 777
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A mechanism of increase in the on-current and offcurrent due to a slightly smaller spacer in state-of- the-art p-channel MOS transistors during manufacturingLau, W.S. / Eng, C.W. / Tee, K.M. / Siah, S.Y. / Vigar, D. / Kim, Y.T. / Lal, M. / Bhat, M. / Chan, L. et al. | 2005
- 781
-
A Capped Trimming Hard-Mask Patterning Technique for Integration of Nano-Devices and Conventional Integrated CircuitsXusheng Wu, / Chan, P.C.H. / Shengdong Zhang, / Mansun Chan, et al. | 2005
- 787
-
Extraction of Early Voltage and Thermal Resistance in InP/InGaAs HBTsYang-Hua Chang, / Zhi-Juan Chang, / Hui-Feng Hsu, et al. | 2005
- 791
-
Normally-Off GaN n-MOSFET with Schottky-Barrier Source and Drain on a p-GaN on Silicon Substrate.Heon-Bok Lee, / Hyun-Ick Cho, / Kyong-Hum Back, / Hyun-Su An, / Jung-Hee Lee, / Sung-Ho Hahm, et al. | 2005
- 795
-
Trap-Related Current Collapse Effects in GaN HEMTsMa, L. / Wang, Y. / Guo, T.Y. / Lu, J. / Hao, Z.B. / Luo, Y. / Yu, Z.P. et al. | 2005
- 799
-
Numerical Simulation of AI~xGa~1~-~xN/AIN/GaN HEMTXue, L. / Wang, Y. / Liu, M. / Xie, C. / Li, C. / He, Z. / Xia, Y. / IEEE Electron Devices Society et al. | 2006
- 799
-
Numerical Simulation of AlXGa1-XN/AlN/GaN HEMTLijun Xue, / Yan Wang, / Ming Liu, / Changqing Xie, / Chengzhan Li, / Zhijing He, / Yang Xia, et al. | 2005
- 803
-
Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate OxidationYang, B.L. / Lin, L.M. / Xu, J.P. / Lai, P.T. et al. | 2005
- 807
-
Heterostructure PIN Rectifier Diode For Power ApplicationsMazhari, B. / Sinha, M. / Dixit, J. et al. | 2005
- 813
-
OR and NOR Logic Circuit Design Using Negative Differential Resistance Device Fabricated by CMOS ProcessKwang-Jow Gan, / Dong-Shong Liang, / Cher-Shiung Tsai, / Yaw-Hwang Chen, / Shin-Bin Kuo, et al. | 2005
- 817
-
Realization of Space Vector Modulation Technique in a Single FPGA Chip for Induction Motor DriveHew, W.P. / Ooi, C.P. / Rahim, N.A. et al. | 2005
- 821
-
A Leakage Power Estimation Method for Standard Cell Based DesignXiaoying Zhao, / Kui Wang, / Xu Cheng, / Dong Tong, et al. | 2005
- 825
-
Investigation of MOS-NDR Voltage Controlled Ring Oscillator Fabricated by CMOS ProcessKwang-Jow Gan, / Dong-Shong Liang, / Chung-Chih Hsiao, / Cher-Shiung Tsai, / Yaw-Hwang Chen, et al. | 2005
- 829
-
A Low Power, High SFDR, ROM-Less Direct Digital Frequency SynthesizerJafari, H. / Ayatollahi, A. / Mirzakuchaki, S. et al. | 2005
- 833
-
Design for Manufacturability of Sub-100 Nanometer Standard CellsJi Xuemei, / Zhang Peiyong, / Shi Zheng, / Yan Xiaolang, et al. | 2005
- 837
-
Author index| 2005
- C1
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Covers| 2005
- i
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2005 IEEE Conference on Electron Devices and Solid-State Circuits| 2005
- ii
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Copyright page| 2005
- iii
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Conference committee| 2005
- v
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Forward| 2005
- vii
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Table of Contents| 2005