3D Integration Techniques Applied to SiGe Power Amplifiers (English)
- New search for: Malladi, R.M.
- New search for: Joseph, A.
- New search for: Lindgren, P.
- New search for: Ni, W.
- New search for: Wang, D.
- New search for: Ding, H.
- New search for: Erturk, M.
- New search for: Previti-Kelly, R.
- New search for: Electrochemical Society
- New search for: Malladi, R.M.
- New search for: Joseph, A.
- New search for: Lindgren, P.
- New search for: Ni, W.
- New search for: Wang, D.
- New search for: Ding, H.
- New search for: Erturk, M.
- New search for: Previti-Kelly, R.
- New search for: Electrochemical Society
In:
SiGe, Ge, and related compounds; materials, processing, and devices
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1053-1068
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2008
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ISBN:
- Conference paper / Print
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Title:3D Integration Techniques Applied to SiGe Power Amplifiers
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Contributors:Malladi, R.M. ( author ) / Joseph, A. ( author ) / Lindgren, P. ( author ) / Ni, W. ( author ) / Wang, D. ( author ) / Ding, H. ( author ) / Erturk, M. ( author ) / Previti-Kelly, R. ( author ) / Electrochemical Society
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Conference:Symposium; 3rd, SiGe, Ge, and related compounds; materials, processing, and devices ; 2008 ; Honolulu, HI
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Published in:
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, N.J.
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Publication date:2008-01-01
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Size:16 pages
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Remarks:Includes bibliographical references and index; Also held on CD-ROM
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Germanium for High Performance MOSFETs and Optical InterconnectsSaraswat, K. / Kim, D. / Krishnamohan, T. / Kuzum, D. / Okyay, A. / Pethe, A. / Yu, H. / Electrochemical Society et al. | 2008
- 13
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Si and SiGe Epitaxy in Perspectivede Boer, W.B. / Electrochemical Society et al. | 2008
- 29
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Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET StructuresLoubet, N. / Boeuf, F. / Monfray, S. / Fenouillet-Beranger, C. / Denorme, S. / Bidal, G. / Skotnicki, T. / Dutartre, D. / Electrochemical Society et al. | 2008
- 39
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Carbon- and Tin- Incorporated Source/Drain Stressors for CMOS TransistorsYeo, Y. / Electrochemical Society et al. | 2008
- 47
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Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and SiKim, D. / Krishnamohan, T. / Saraswat, K. / Electrochemical Society et al. | 2008
- 57
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Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETsHashemi, P. / Canonico, M. / Yang, J. / Gomez, L. / Berggren, K. / Hoyt, J. / Electrochemical Society et al. | 2008
- 57
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Fabrication and characterization of suspended uniaxial tensile strained-Si nanowires for gate-all-around n-MOSFETsHashemi, P. / Canonico, M. / Yang, J.K.W. / Gomez, L. / Berggren, K.K. / Hoyt, J.L. et al. | 2008
- 71
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Stress Manipulation with Strained-Silicon Directly (SSOI) on InsulatorThean, A. / Electrochemical Society et al. | 2008
- 79
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High Hole Mobility SGOI Substrates Obtained by the Germanium Condensation TechniqueSouriau, L. / Nguyen, T. / Augendre, E. / Loo, R. / Terzieva, V. / Caymax, M. / Cristoloveanu, S. / Meuris, M. / Vandervorst, W. / Electrochemical Society et al. | 2008
- 91
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Simulation of <110>nMOSFETs with a Tensile Strained Cap LayerBufler, F. / Heinz, F.O. / Tsibizov, A. / Oulmane, M. / Electrochemical Society et al. | 2008
- 101
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Strain Technology under Metal/High-k Damascene-Gate StacksWakabayashi, H. / Electrochemical Society et al. | 2008
- 117
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Study on Stress Memorization by Argon Implantation and AnnealingHino, M. / Nagata, K. / Yoshida, T. / Kosemura, D. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Sugii, N. / Ogura, A. / Hattori, T. et al. | 2008
- 127
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Inductively Coupled Ar/CCl~2F~4/Cl~2 Plasma Etching of GeKim, T. / Choi, S. / Jeong, T. / Kang, S. / Shim, K. / Electrochemical Society et al. | 2008
- 135
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Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic FieldsArmour, N. / Yildiz, M. / Yildiz, E. / Dost, S. / Electrochemical Society et al. | 2008
- 147
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Reactive Ion Etch of Si~3N~4 Spacers High Selective to GermaniumAltamirano, E. / Kunnen, E. / De Jaeger, B. / Boullart, W. / Electrochemical Society et al. | 2008
- 153
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Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET StructuresKolahdouz, M. / Hallstedt, J. / Ostling, M. / Wise, R. / Radamson, H. / Electrochemical Society et al. | 2008
- 159
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Evaluation of DiMethylAminoGermaniumTetraChloride as a Novel Carbon-Dopant and Germanium Precursor for Germanium and Silicon Germanium Chemical Vapor DepositionLeys, F.E. / Liu, C. / Shi, X. / Lamare, B. / Takeuchi, S. / Schaekers, M. / Loo, R. / Woelk, E. / Caymax, M. / Electrochemical Society et al. | 2008
- 163
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Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transitors Stressed by Negative Gate BiasHuang, C. / Yang, Y. / Peng, C. / Sun, H. / Liu, C. / Hsu, Y. / Shih, C. / Chen, J. / Electrochemical Society et al. | 2008
- 169
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Hole Mobilities of Si~0~.~6Ge~0~.~4 Quantum Well Buried-Channel Field Effect Transistors on SOIFujinaga, K. / Electrochemical Society et al. | 2008
- 175
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Asymmetric Energy Distribution of Interface Traps in Germanium MOSFETs with HfO~2 Gate DielectricXie, R. / Wu, N. / Shen, C. / Zhu, C. / Electrochemical Society et al. | 2008
- 181
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UV and Visible Raman Spectroscopy Applied to sSi/Si~1~-~xGe~x and sSOI StacksRouchon, D. / Hartmann, J. / Crisci, A. / Mermoux, M. / Electrochemical Society et al. | 2008
- 189
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Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge CondensationTanaka, M. / Tanaka, T. / Sadoh, T. / Morioka, J. / Kitamura, T. / Miyao, M. / Electrochemical Society et al. | 2008
- 193
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Extended Defects in Ge-condensed SGOI Structures Fabricated by Using Proton and Helium ImplantationsKwak, D. / Seo, M. / Kim, D. / Lee, D. / Lee, Y. / Cho, H. / Electrochemical Society et al. | 2008
- 203
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Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy StudyRouchon, D. / Destefanis, V. / Hartmann, J. / Crisci, A. / Mermoux, M. / Electrochemical Society et al. | 2008
- 215
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Silicon Nanomembranes Incorporating Mixed Crystal OrientationsScott, S.A. / Paskiewicz, D.M. / Savage, D.E. / Lagally, M.G. / Electrochemical Society et al. | 2008
- 219
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Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase CrystallizationSadoh, T. / Toko, K. / Miyao, M. / Electrochemical Society et al. | 2008
- 223
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Reliability of Ti-based Gate Dielectrics on Strained-Si~0~.~9~1Ge~0~.~0~9 and Ge under Dynamic and AC StressingMahata, C. / Bera, M.K. / Bose, P. / Maiti, C. / Electrochemical Society et al. | 2008
- 229
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Regrowth Kinetics Of Self-amorphized Germanium and Evolution Of Implant DamageKoffel, S. / Scheiblin, P. / Claverie, A. / Electrochemical Society et al. | 2008
- 233
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Temperature-dependent Operation of Ge on Si p-i-n PhotodetectorsColace, L. / Balbi, M. / Sorianello, V. / Assanto, G. / Electrochemical Society et al. | 2008
- 237
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Chemical Mechanical Polishing of Epitaxial Germanium on SiO~2-patterned Si(001) SubstratesHydrick, J.M. / Park, J. / Bai, J. / Major, C. / Curtin, M. / Fiorenza, J. / Carroll, M. / Lochtefeld, A. / Electrochemical Society et al. | 2008
- 249
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Micro-Raman Studies on Nickel Germanides Formed on (110) Crystalline GePeng, C. / Huang, C. / Yang, Y. / Liu, C. / Electrochemical Society et al. | 2008
- 255
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Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO~2Makihara, K. / Kawanami, A. / Ikeda, M. / Higashi, S. / Miyazaki, S. / Electrochemical Society et al. | 2008
- 261
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Generation of Acceptor Levels in Ge by the Uniaxial Strain - A Theoretical ApproachTakai, K. / Shiraishi, K. / Oshiyama, A. / Electrochemical Society et al. | 2008
- 267
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Influence of in-situ Boron Doping on the Surface Roughening of SiGe:B FilmsTsuchida, R. / Mori, S. / Sato, T. / Uchitomi, N. / Mizushima, I. / Electrochemical Society et al. | 2008
- 273
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Low Temperature Epitaxial Growth of Full Heusler Alloy Fe~2MnSi on Ge(111) Substrates for Spintronics ApplicationUeda, K. / Ando, Y. / Yamamoto, K. / Kumano, M. / Hamaya, K. / Sadoh, T. / Narumi, K. / Maeda, Y. / Miyao, M. / Electrochemical Society et al. | 2008
- 277
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Characterization of Fe~3Si/Si Schottky Contact for Future Spin-TransistorKishi, Y. / Kumano, M. / Ueda, K. / Sadoh, T. / Miyao, M. / Electrochemical Society et al. | 2008
- 281
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Schottky Barrier Height Engineering on NiSiGe/SiGe ContactsTan, C.D. / Chua, C. / Chi, D. / Electrochemical Society et al. | 2008
- 287
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Heteroepitaxial Integration of Single Crystalline Ge(111) Layers on Si(111) via PrO~2(111) HeterostructuresGiussani, A. / Seifarth, O. / Rodenbach, P. / Zaumseil, P. / Weidner, G. / Muessig, H. / Storck, P. / Schroeder, T. / Electrochemical Society et al. | 2008
- 293
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Effect of Strained-Si Layer Thickness on Dislocation Distribution and SiGe Relaxation in Thin Buffer Layer Strained-Si/SiGe HeterostructuresLu, J. / Rozgonyi, G. / Seacrist, M. / Electrochemical Society et al. | 2008
- 299
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Engineering SiGe Growth Using Mechanically Responsive Ultrathin SubstratesKim-Lee, H. / Savage, D.E. / Ritz, C. / Lagally, M.G. / Turner, K.T. / Electrochemical Society et al. | 2008
- 307
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Characterization of Si~1~-~xGe~x Epilayer Thickness, Ge and Doped Boron Concentration with UV-Vis-IR Spectroscopic EllipsometerBondaz, A. / Kitzinger, L. / Electrochemical Society et al. | 2008
- 317
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Recent Progress and Challenges in Enabling Embedded Si:C TechnologyYang, B.F. / Ren, Z. / Takalkar, R. / Black, L.R. / Dube, A. / Weijtmans, J.W. / Li, J. / Chan, K. / Souza, J. / Madan, A. et al. | 2008
- 325
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Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization TechniquesMadan, A. / Li, J. / Ren, Z. / Yang, B.F. / Harley, E.C. / Adam, T.N. / Loesing, R. / Zhu, Z. / Pinto, T. / Chakravarti, A. et al. | 2008
- 333
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The Impact of Carbon on the Warpage of e-SiGe Wafers During Laser AnnealRiley, D.J. / Bu, H. / Jain, A. / Khamankar, R. / Electrochemical Society et al. | 2008
- 341
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Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si WafersHartmann, J. / Papon, A. / Colonna, J. / Ernst, T. / Billon, T. / Electrochemical Society et al. | 2008
- 353
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Simultaneous Optimization of the Material Properties, Uniformity and Deposition Rate of Polycrystalline CVD and PECVD Silicon-Germanium Layers for MEMS ApplicationsBryce, G. / Severi, S. / Bois, B.D. / Willegems, M. / Claes, G. / Van Hoof, R. / Haspeslagh, L. / Decoutere, S. / Witvrouw, A. / Electrochemical Society et al. | 2008
- 367
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Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOSIrisawa, T. / Numata, T. / Tezuka, T. / Usuda, K. / Hirashita, N. / Moriyama, Y. / Sugiyama, N. / Takagi, S. / Electrochemical Society et al. | 2008
- 381
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Elimination of Native Ge Dielectrics at Ge/High-k Dielectric Interfaces for Ge MOS DevicesLucovsky, G. / Long, J.P. / Seo, H. / Chung, K. / Lee, S. / Electrochemical Society et al. | 2008
- 397
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Mobility Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETsKrishnamohan, T. / Pham, A. / Jungemann, C. / Meinerzhagen, B. / Saraswat, K. / Electrochemical Society et al. | 2008
- 407
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The Versatile Use of SiGe for High-Performance DevicesHijzen, E. / Donkers, J. / Meunier-Beillard, P. / Saarnilehto, E. / Sonsky, J. / Hurkx, G.F. / van Noort, W. / Electrochemical Society et al. | 2008
- 415
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Integrating Selective Epitaxy in Advanced Logic & Memory DevicesKuppurao, S. / Kim, Y. / Cho, Y. / Chopra, S. / Ye, Z. / Sanchez, E. / Chu, S. / Electrochemical Society et al. | 2008
- 427
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HCl Selective Etching of Si~1~-~xGe~x versus Si for Silicon On Nothing and Multi Gate DevicesDestefanis, V. / Hartmann, J. / Hue, F. / Bensahel, D. / Electrochemical Society et al. | 2008
- 439
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Comparison Between Three Si~1~-~xGe~x versus Si Selective Etching ProcessesSalvetat, T. / Destefanis, V. / Borel, S. / Hartmann, J. / Kermarrec, O. / Campidelli, Y. / Electrochemical Society et al. | 2008
- 451
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Etch Rates of Ge, GaAs and InGaAs in Acids, Bases and Peroxide Based MixturesSioncke, S. / Brunco, D. / Meuris, M. / Uwamahoro, O. / Van Steenbergen, J. / Vrancken, E. / Heyns, M. / Electrochemical Society et al. | 2008
- 463
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Selective Epitaxial Growth of Si(Ge) for High Performance MOSFET ApplicationsMizushiman, I. / Electrochemical Society et al. | 2008
- 475
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SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS TechnologyHolt, J.R. / Harley, E.C. / Adam, T.N. / Jeng, S. / Tabakman, K. / Pal, R. / Nayfeh, H.M. / Black, L.R. / Kempisty, J.J. / Stoker, M.W. et al. | 2008
- 485
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Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS PurposesGonzatti, F. / Hartmann, J. / Yckache, K. / Electrochemical Society et al. | 2008
- 495
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Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor DepositionTakeuchi, S. / Nguyen, N.D. / Leys, F.E. / Loo, R. / Conard, T. / Vandervorst, W. / Caymax, M. / Electrochemical Society et al. | 2008
- 503
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Selective Polycrystalline Si and SiGe Deposition on Epitaxial Si Induced by B-Atomic Layer DopingYamamoto, Y. / Koepke, K. / Fursenko, O. / Weidner, G. / Murota, J. / Tillack, B. / Electrochemical Society et al. | 2008
- 513
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Electrical Activity of Dislocations and Defects in Strained Si and Ge Based DevicesSimoen, E.R. / Eneman, G. / Verheyen, P. / Loo, R. / Gonzalez, M.B. / Claeys, C. / Electrochemical Society et al. | 2008
- 529
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Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual SubstratesMalm, B.G. / Hallstedt, J. / Hellstrom, P. / Ostling, M. / Electrochemical Society et al. | 2008
- 539
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Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray TopographyShimura, T. / Inoue, T. / Okamoto, Y. / Hosoi, T. / Edo, H. / Iida, S. / Ogura, A. / Watanabe, H. / Electrochemical Society et al. | 2008
- 545
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Channel Strain Characterization in Embedded SiGe by Nano-beam DiffractionLi, J. / Lamberti, A. / Domenicucci, A. / Gignac, L. / Utomo, H. / Luo, Z. / Rovedo, N. / Fang, S. / Ng, H. / Holt, J.R. et al. | 2008
- 551
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The Effect of Silicide Processing on Stress Reduction in Silicon Device Structures with Strained SiGe ElementsPeidous, I. / Press, P. / Electrochemical Society et al. | 2008
- 563
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Performance of Ge/Si Receivers at 1310 nmMorse, M. / Dosunmu, O. / Yin, T. / Kang, Y. / Liu, H.D. / Sarid, G. / Ginsburg, E. / Cohen, R. / Litski, S. / Zadka, M. et al. | 2008
- 575
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High Performance Ge Devices for Electronic-Photonic Integrated CircuitsLiu, J. / Michel, J. / Electrochemical Society et al. | 2008
- 583
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Epitaxial Growth of Ge Thick Layers on Nominal and 6oC off Si(001); Ge Surface Passivation by SiHartmann, J. / Grampeix, H. / Clavelier, L. / Electrochemical Society et al. | 2008
- 591
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Characteristics of Ge and SiGe pin Photodiodes without Post-growth AnnealingPark, S. / Takita, S. / Ichikawa, R. / Ishikawa, Y. / Wada, K. / Electrochemical Society et al. | 2008
- 601
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High-speed, Monolithic CMOS Receivers with Ge on Si Waveguide PhotodetectorsMasini, G. / Sahni, S. / Analui, B. / Capellini, G. / Witzens, J. / Gunn, C. / Electrochemical Society et al. | 2008
- 611
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A Multiscale Model of The Low-Temperature CVD of SiliconCavallotti, C. / Barbato, A. / Electrochemical Society et al. | 2008
- 623
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Epitaxial Growth of Si:C by means of Gas Source MBEYamada, A. / Ishihara, H. / Inoue, K. / Electrochemical Society et al. | 2008
- 639
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Massive Batch Selective Si and SiGe Epitaxial DepositionMeyer, D.J. / Suvar, E. / Rohlfing, F. / Grabolla, T. / Electrochemical Society et al. | 2008
- 647
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SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor DepositionLee, C. / Lin, C. / Liu, C. / Chang, H. / Lee, S. / Shushpannikov, P. / Gorodtsov, V. / Goldstein, R. / Electrochemical Society et al. | 2008
- 659
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Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in GeSpiewak, P. / Vanhellemont, J. / Sueoka, K. / Kurzydlowski, K. / Romandic, I. / Electrochemical Society et al. | 2008
- 671
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Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS ChannelsDelabie, A. / Alian, A. / Bellenger, F. / Brammertz, G. / Brunco, D. / Caymax, M. / Conard, T. / Franquet, A. / Houssa, M. / Sioncke, S. et al. | 2008
- 671
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Atomic layer deposition of high-kappa dielectric layers on Ge and III-V MOS channelsDelabie, A. / Alian, A. / Bellenger, F. / Brammertz, G. / Brunco, D.P. / Caymax, M. / Conard, T. / Franquet, A. / Houssa, M. / Sioncke, S. et al. | 2008
- 687
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Interface and Defect Control for Group IV Channel EngineeringSakai, A. / Ohara, Y. / Ueda, T. / Toyada, E. / Izunome, K. / Takeuchi, S. / Shimura, Y. / Nakatsuka, O. / Ogawa, M. / Zaima, S. et al. | 2008
- 699
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Fixed-Oxide-Charge Characterization by Photoreflec-tance Spectroscopy in HfO~2 on Ge treated by FluorineKanashima, T. / Lee, H. / Mori, Y. / Imajo, H. / Okuyama, M. / Electrochemical Society et al. | 2008
- 707
-
Enhanced Ge MOS Device Performance Through a Novel Post-gate CF~4-plasma Treatment ProcessXie, R. / Thamarai, M. / Sun, Z. / Yu, M. / Lai, D.M. / Chan, L. / Zhu, C. / Electrochemical Society et al. | 2008
- 717
-
Formation of Ge~3N~4/Ge Structures Using Nitrogen Radicals and Their Thermal StabilityKondo, H. / Oda, S. / Ogawa, M. / Zaima, S. / Electrochemical Society et al. | 2008
- 725
-
Nanowires to Replace Planar CMOS?Thean, A. / Electrochemical Society et al. | 2008
- 729
-
Gate-All-Around Silicon Nanowire Devices: Are These the Future of CMOS?Lo, G.P. / Singh, N. / Rustagi, S. / Buddharaju, K.D. / Balasubramanian, N. / Kwong, D. / Electrochemical Society et al. | 2008
- 731
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Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETsHoyt, J. / Hashemi, P. / Gomez, L. / Electrochemical Society et al. | 2008
- 735
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Opportunities for Group IV Nanowire Devices in Si CMOS TechnologyTutuc, E. / Banerjee, S. / Nah, J. / Varahramyan, K. / Jain, N. / Ferrer, D. / Electrochemical Society et al. | 2008
- 741
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III/V Nanowire FETs for CMOS?Wernersson, L. / Electrochemical Society et al. | 2008
- 747
-
Novel Metal-Germinade Schottky Barrier Contacts for Si-Photonics ApplicationLo, G.P. / Ang, K. / Yu, M. / Kwong, D. / Electrochemical Society et al. | 2008
- 755
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Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI SubstratesHutin, L. / Le Royer, C. / Tabone, C. / Carron, V. / Delaye, V. / Nemouchi, F. / Aussenac, F. / Clavelier, L. / Deleonibus, S. / Electrochemical Society et al. | 2008
- 767
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Very High-k Tetragonal ZrO~2 on Ge with GeO~2 Passivating Interfacial LayerTsipas, P. / Mavrou, G. / Volkos, S. / Sotiropoulos, A. / Galata, S. / Panayiotatos, Y. / Dimoulas, A. / Electrochemical Society et al. | 2008
- 773
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Generation of Realistic Amorphous Al~2O~3 And ZrO~2 Samples By Hybrid Classical and First-Principle Molecular Dynamics SimulationsChagarov, E. / Kummel, A.C. / Electrochemical Society et al. | 2008
- 787
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Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random MixingNakayama, T. / Shinji, S. / Sotome, S. / Electrochemical Society et al. | 2008
- 799
-
Chemical Vapor Deposition Epitaxy of Silicon-based Materials using NeopentasilaneSturm, J.C. / Chung, K. / Electrochemical Society et al. | 2008
- 807
-
Nanosynthesis of Si-Ge-Sn Semiconductors and Devices via Purpose-built Hydride CompoundsKouvetakis, J. / Tolle, J. / Roucka, R. / D Costa, V.R. / Fang, Y. / Chizmeshya, A.V. / Menendez, J. / Electrochemical Society et al. | 2008
- 823
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Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen AnnealingYu, H. / Park, J. / Okyay, A. / Saraswat, K. / Electrochemical Society et al. | 2008
- 829
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Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual SubstratesWang, G. / Leys, F.E. / Souriau, L. / Loo, R. / Caymax, M. / Brunco, D. / Geypen, J. / Bender, H. / Meuris, M. / Vandervorst, W. et al. | 2008
- 837
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Selective Epitaxial Growth of Ge-on-Si for Photodiode ApplicationsKim, M. / Olubuyide, O. / Yoon, J. / Hoyt, J. / Electrochemical Society et al. | 2008
- 851
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Ge Quantum Well Modulators on SiMiller, D. / Schaevitz, R.K. / Roth, J.E. / Ren, S. / Fidaner, O. / Electrochemical Society et al. | 2008
- 857
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Ge dots in Optical Microcavities--A Possible Direction for Silicon-based Light Emitting DevicesXia, J. / Tominaga, R. / Iwamoto, S. / Usami, N. / Aragawa, Y. / Shiraki, Y. / Electrochemical Society et al. | 2008
- 865
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Si/SiGe Bound-to-Continuum Quantum Cascade EmittersPaul, D.J. / Matmon, G. / Lever, L. / Ikonic, Z. / Kelsall, R. / Chrastina, D. / Isella, G. / von Kanel, H. / Muller, E. / Neels, A. et al. | 2008
- 875
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Photocurrent of SiGe/Si Strained Multiple Quantum-Wells Grown by UHV-CVDKim, T. / Choi, S. / Jeong, T. / Kang, S. / Shim, K. / Electrochemical Society et al. | 2008
- 881
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Optical Bleaching of Thin Film Ge on SiSun, X. / Liu, J. / Kimerling, L. / Michel, J. / Electrochemical Society et al. | 2008
- 893
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High Ge Content SiGe alloys: Doping and Contact FormationKasper, E. / Oehme, M. / Lupaca-Schomber, J. / Electrochemical Society et al. | 2008
- 905
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New Heating Method for Polycrystallization of Amorphous Si Using Microwave Plasma IrradiationNakagawa, K. / Electrochemical Society et al. | 2008
- 909
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Low Temperature Boron Activation in Amorphous Germanium for Three Dimensional Integrated Circuits (3D-ICs) using Ni-induced CrystallizationPark, J. / Tada, M. / Yu, H. / Kuzum, D. / Na, Y. / Saraswat, K. / Electrochemical Society et al. | 2008
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Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si LayersBouvier, J. / Bremond, G. / Vandelle, B. / Brossard, F. / Dutartre, D. / Electrochemical Society et al. | 2008
- 923
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Dry Etch Challenges in Gate All Around Devices for sub 32 nm ApplicationsBarnola, S. / Vizioz, C. / Vulliet, N. / Dupre, C. / Ernst, T. / Gautier, P. / Arvet, C. / Guillaumot, B. / Bernard, E. / Pauliac-Vaujeour, S. et al. | 2008
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Spin-Polarized Electron Transport in SiliconAppelbaum, I. / Electrochemical Society et al. | 2008
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Formation of Si- and Ge-based Full-Heusler Alloy Thin Films using SOI and GOI Substrates for the Half-metallic Source and Drain of Spin TransistorsTakamura, Y. / Nishijima, A. / Nagahama, Y. / Nakane, R. / Sugahara, S. / Electrochemical Society et al. | 2008
- 953
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Germanium-Based Ferromagnetic Semiconductor Ge~1~-~xFe~x for Silicon SpintronicsShuto, Y. / Tanaka, M. / Sugahara, S. / Electrochemical Society et al. | 2008
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SiGe Tunnel Field Effect TransistorsEisele, I. / Lochner, H. / Schlosser, M. / Electrochemical Society et al. | 2008
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Electrodeposition of Nanoscale Si~xGe~1~-~x from an Air- and Water Stable Ionic LiquidSalman, R.A. / El Abedin, S.Z. / Endres, F. / Electrochemical Society et al. | 2008
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Phonon Transport and Thermoelectricity in Silicon NanostructuresRyu, H. / Ritz, C. / Klein, L. / Hamann, H. / Lagally, M.G. / Eriksson, M. / Electrochemical Society et al. | 2008
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Enhanced Ferromagnetic Fe-rich Germanide Film Grown using Magnetron Sputtering Employing a Post-deposition AnnealWong, A.S. / Ho, G. / Chi, D. / Electrochemical Society et al. | 2008
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SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions Yielding to Drive Current Enhancement in n-channel MOSFETBauer, M. / Machkaoutsan, V. / Zhang, Y. / Weeks, D. / Spear, J. / Thomas, S. / Verheyen, P. / Kerner, C. / Clemente, F. / Bender, H. et al. | 2008
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Monolithic III-V/Si IntegrationFitzgerald, E.A. / Bulsara, M.T. / Bai, Y. / Cheng, C. / Liu, W.K. / Lubyshev, D. / Fastenau, J.M. / Wu, Y. / Urtega, M. / Ha, W. et al. | 2008
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Strain Loss in Epitaxial Si:C Films Induced by Phosphorus DiffusionYang, B. / De Souza, J. / Saenger, K. / Bedell, S. / Reznicek, A. / Adam, T.N. / Hopstaken, M. / Sadana, D. / Electrochemical Society et al. | 2008
- 1025
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Ge Interface Passivation Techniques and Their Thermal StabilityKuzum, D. / Krishnamohan, T. / Pethe, A. / Oshima, Y. / Sun, Y. / McVittie, J. / McIntyre, P. / Pianetta, P. / Saraswat, K. / Electrochemical Society et al. | 2008
- 1031
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Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized GermaniumSimoen, E.R. / Brugere, A. / Satta, A. / Van Daele, B. / Brijs, B. / Richard, O. / Geypen, J. / Meuris, M. / Vandervorst, W. / Electrochemical Society et al. | 2008
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SiGe:C BiCMOS Technologies for Automotive Radar ApplicationsFischer, G.G. / Glisic, S. / Electrochemical Society et al. | 2008
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3D Integration Techniques Applied to SiGe Power AmplifiersMalladi, R.M. / Joseph, A. / Lindgren, P. / Ni, W. / Wang, D. / Ding, H. / Erturk, M. / Previti-Kelly, R. / Electrochemical Society et al. | 2008
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SiGe HBT featuring fT > 600GHz at Cryogenic TemperatureZerounian, N. / Garcia, E.R. / Aniel, F. / Chevalier, P. / Geynet, B. / Chantre, A. / Electrochemical Society et al. | 2008
- 1079
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3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOIBellini, M. / Cressler, J. / Turowski, M. / Avenier, G. / Chantre, A. / Chevalier, P. / Electrochemical Society et al. | 2008
- 1089
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Ultra-low-power SiGe HBTts using high-precision RT-CVD epitaxial growthOda, K. / Miura, M. / Shimamoto, H. / Washio, K. et al. | 2008
- 1089
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Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial GrowthOda, K. / Miura, M. / Shimamoto, H. / Washio, K. / Electrochemical Society et al. | 2008