New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC (English)
- New search for: Gali, A.
- New search for: Hornos, T.
- New search for: Son, N.T.
- New search for: Janzen, E.
- New search for: Gali, A.
- New search for: Hornos, T.
- New search for: Son, N.T.
- New search for: Janzen, E.
- New search for: Suzuki, Akira
In:
International Conference on Silicon Carbide and Related Materials
;
413-416
;
2009
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ISSN:
- Conference paper / Print
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Title:New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
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Contributors:Gali, A. ( author ) / Hornos, T. ( author ) / Son, N.T. ( author ) / Janzen, E. ( author ) / Suzuki, Akira
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Conference:International Conference on Silicon Carbide and Related Materials ; 2007 ; Otsu, Japan
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Published in:MATERIALS SCIENCE FORUM ; 600-603 ; 413-416
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Stafa-Zurich , United Kingdom
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Publication date:2009-01-01
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Size:4 pages
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Remarks:Includes bibliographical references and index.
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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