Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor (English)
- New search for: Watabe, Y.
- New search for: Tajima, T.
- New search for: Nakamura, T.
- New search for: Materials Research Society
- New search for: Watabe, Y.
- New search for: Tajima, T.
- New search for: Nakamura, T.
- New search for: Ueda, Osamu
- New search for: Materials Research Society
In:
Reliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials
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201-206
;
2010
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ISBN:
- Conference paper / Print
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Title:Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor
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Contributors:Watabe, Y. ( author ) / Tajima, T. ( author ) / Nakamura, T. ( author ) / Ueda, Osamu / Materials Research Society
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Conference:Conference, Reliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials ; 2009
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Published in:Reliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials ; 201-206MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS ; 1195 ; 201-206
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Publisher:
- New search for: Materials Research Society
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Place of publication:Warrendale, Pa.
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Publication date:2010-01-01
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Size:6 pages
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Remarks:Includes bibliographical references and index.
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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