Performance Improvement of Si-NC Memory Device by Using a Novel Junction Assisted Programming Scheme (English)
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In:
China semiconductor technology
1
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149-154
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2011
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Performance Improvement of Si-NC Memory Device by Using a Novel Junction Assisted Programming Scheme
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Contributors:
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Conference:International Conference; 10th, China semiconductor technology ; 2011 ; Shanghai, China
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Published in:China semiconductor technology , 1 ; 149-154ECS TRANSACTIONS ; 34, 1 ; 149-154
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Publisher:
- New search for: The Electrochemical Society
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Place of publication:Pennington, NJ
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Publication date:2011-01-01
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Size:6 pages
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Remarks:Includes bibliographical references and author index
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Embedded Non-Volatile Memory TechnologiesShum, D. et al. | 2011
- 9
-
A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling FET (TFET)Qin, S. / Tang, P. / Cai, Y. / Huang, Q. / Tang, Y. / Huang, R. et al. | 2011
- 17
-
Design of a 1-T Image Sensor by SimulationLiu, X. / Zang, S. / Lin, X. / Cao, C. / Wang, P. / ZhangZhang, D. et al. | 2011
- 25
-
Deposition of ZnO Films by Sputtering and its Resistive Switching PropertiesWang, F. / Zhang, K. / Yang, B. / Wang, L. / Song, K. et al. | 2011
- 31
-
Leakage Engineering Enabling PDSOI Ring Oscillators Operating in Sub-100pA/μm I~o~f~f RegimeRen, Z. / Cai, J. / Robison, R.R. / Jagannathan, B. / Park, D. / Ning, T.H. et al. | 2011
- 37
-
Ultra-Thin Body and BOX (UTBB) Device for Aggressive Scaling of CMOS TechnologyLiu, Q. / Yagishita, A. / Kumar, A. / Loubet, N. / Yamamoto, T. / Kulkarni, P. / Monsieur, F. / Khakifirooz, A. / Ponoth, S. / Cheng, K. et al. | 2011
- 43
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Simulations of FDSOI CMOS with Sharing Contact between Source/Drain and Back GateXu, M. / Liang, Q. / Zhu, H. / Yin, H. / Luo, Z. / Chen, D. / Ye, T. et al. | 2011
- 49
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Scaling MOSFETs with Self-aligned Super-Steep-Retrograded Halo (3SRH)(3SRH)(3SRH)(3SRH)(3SRH)Wu, B. / Xiao, W. / Zhu, H. / Liang, Q. / Wu, H. / Yin, H. / Luo, Z. / Yu, H. / Chen, D. / Ye, T. et al. | 2011
- 55
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Electrostatic Discharge (ESD) Protection Challenges of Gate-All-Around Nanowire Field-Effect TransistorsLiu, W. / Liou, J. / Singh, N. / Lo, G. / Chung, J. / Jeong, Y. et al. | 2011
- 61
-
Characterization of Random Telegraph Signal Effects for 0.18um TechnologyJi, Y. / Dai, S. / Wei, M. / Lu, X. / Zhang, S. / Xu, D. et al. | 2011
- 67
-
Effect of AlGaN Barrier Thickness on the Noise of AlGaN/GaN High Electron Mobility TransistorsYahyazadeh, R. / Hashempour, Z. et al. | 2011
- 67
-
Effect of AlGaN barrier thickness on the noise of AIGaN/GaN High electron mobility transistorsYahyazadeh, R. / Hashempour, Z. et al. | 2011
- 75
-
Extraction and Analysis of Substrate Parameters in On-Chip Spiral Inductor ModelLi, X. / Ren, Z. / Chen, D. / Shi, Y. et al. | 2011
- 81
-
Opportunities and Challenges of FinFET as a Device Structure Candidate for 14nm Node CMOS TechnologyYamashita, T. / Basker, V. / Standaert, T. / Yeh, C. / Faltermeier, J. / Yamamoto, T. / Lin, C. / Bryant, A. / Maitra, K. / Kulkarni, P. et al. | 2011
- 87
-
Structural effects of Channel Cross-Section on the Gate Capacitance of Silicon Nanowire Field-effect TransistorsSato, S. / Kakushima, K. / Ahmet, P. / Ohmori, K. / Natori, K. / Yamada, K. / Iwai, H. et al. | 2011
- 93
-
Process Impact and Design Optimization on the Soft Yield of 25nm FinFET SRAM CellsLi, M. / Liang, Q. / Zhu, H. / Zhong, H. / Chen, D. / Ye, T. et al. | 2011
- 99
-
TiN/W/La~2O~3/Si High-k Gate Stack for EOT below 0.5nm0.5nmAhmet, P. / Kitayama, D. / Kaneda, T. / Suzuki, T. / Koyanagi, T. / Kouda, M. / Mamatrishat, M. / Kawanago, T. / Kakushima, K. / Tsutsui, K. et al. | 2011
- 103
-
PMOS Source/Drain Extension Dopant Species effect on Device and SRAM PerformanceLiu, J. / Zhou, J. / Wang, W. / Guo, R. / Zhang, L. / Shen, Z. / Wang, B. / Zhou, A. / Hao, H. / Cui, J. et al. | 2011
- 107
-
A Novel Tunnel Oxide Based Tunnel FETWang, H. / Luo, Z. / Yin, H. / Zhu, H. / Liu, J. / Zhu, Z. et al. | 2011
- 113
-
STI CMP: Exploration of a Colloidal Silica Based Slurry SystemSong, P. / Yaoying, D. / Sun, J.D. et al. | 2011
- 119
-
Linearity Improvement on MIM CapacitorsChu, T. / Yang, P. / Kho, E.S. / Ang, Y. / Tia, S. et al. | 2011
- 125
-
Modeling of Electron Transport in III- Nitride Compound Semiconductors for Low Field and Low Temperature ApplicationsChakrabarti, S. / Chatterjee, S.G. / Chattopadhyay, D. / Chatterjee, S. et al. | 2011
- 137
-
Fast Flexible Electronics Based on Printable Thin Mono-Crystalline SiliconMa, Z. / Zhang, K. / Seo, J. / Zhou, H. / Sun, L. / Yuan, H. / Qin, G. / Pang, H. / Zhou, W. et al. | 2011
- 143
-
HHNEC 0.18um BCD Technology for High Density Power IntegrationShuai, Z. / Wensheng, Q. / Ke, D. et al. | 2011
- 149
-
Performance Improvement of Si-NC Memory Device by Using a Novel Junction Assisted Programming SchemeJiang, D. / Huo, Z. / Zhang, M. / Wang, Q. / Liu, J. / Yu, Z. / Yang, X. / Wang, Y. / Zhang, B. / Chen, J. et al. | 2011
- 155
-
Dual Floating Gate Flash Cell Using Single Poly ProcessesLin, X. / Liu, L. / Liu, X. / Zanga, S. / Cao, C. / Wang, P. / Zhang, D. et al. | 2011
- 161
-
Anomalous Behaviors of Cubic GaInN Ternary AlloysTit, N. et al. | 2011
- 167
-
0.18um Scalable 7∼45V pLDMOS for Smart Power ApplicationLiu, Z. / Tang, S. / Shen, J. / Shao, C. et al. | 2011
- 173
-
0.18 Micron BiCMOS Process with Novel Structure SiGeC HBTLiu, D. / Qian, W. / Chen, X. / Chen, F. / Hu, J. / Xiao, S. / Wang, Y. / Chiu, T. et al. | 2011
- 183
-
Temperature Insensitive Clock Buffer and Its Application on Clock TreeTie, M. / Li, X. et al. | 2011
- 189
-
Low-Power Design of Double Edge-Triggered Static SOI D Flip-FlopXing, W. / Song, J. / Gang, D. et al. | 2011
- 195
-
Effects of Oxygen Flow Ratios and Annealing on TiO~x Deposited by Reactive Magnetron SputteringWang, L. / Zhang, K. / Wang, Q. / Wang, F. / Wei, X. et al. | 2011
- 203
-
Robustness Enhancement in Optical Lithography: From Pixelated Mask Optimization to Pixelated Source-Mask OptimizationJia, N. / Lam, E.Y. et al. | 2011
- 209
-
Mask Synthesis for Aerial Image Fidelity in Optical Lithography Using a Coarse-Grid-Approximation Level-Set ApproachPeng, Y. / Zhang, J. / Wang, Y. / Yu, Z. et al. | 2011
- 215
-
A Fast OPC Algorithm for IC Layout Based on 1-D Cells after Optimization of Gap DistributionLin, B. / Xie, C. / Shi, Z. et al. | 2011
- 223
-
Extension Use of Immersion Lithography for the 22nm Half-Pitch and BeyondKanaya, R. et al. | 2011
- 231
-
Cymer LPP EUV Source System Development StatusLin, B. / La Fontaine, B. / Brandt, D. / Farrar, N. et al. | 2011
- 237
-
Advanced Packaging Stepper for 300mm Wafer ProcessChang, Z. / Ling, H. et al. | 2011
- 243
-
Foundry Efficiency Gains Through Common Photolithography ThemesLamb, J.E. / Chris, C. / Zhu, Z. / Drain, D. / Sullivan, D. et al. | 2011
- 249
-
Use of DBARCs Beyond ImplantWashburn, C. / Lowes, J.A. / Guerrero, A. et al. | 2011
- 257
-
Development of Under Layer Material for EUV LithographySakamoto, R. / Ho, B. / Fujitani, N. / Endo, T. / Ohnishi, R. et al. | 2011
- 263
-
Evaluation of 193 nm Photoresist Material at Advanced Immersion NodesHao, J. / Xu, Y. / Liu, C. et al. | 2011
- 269
-
Limit of Line End Shortening Correction under Single Exposure in 193 nm Immersion LithographyWu, Q. / Xu, Y. / Hao, J. / Liu, C. / Shi, X. / Gu, Y. et al. | 2011
- 277
-
248nm Process Is Capable for sub 0.09 um GroundrulesWang, L. / Guo, X. / Tong, Y. / Meng, H. / Su, B. / Xiao, S. et al. | 2011
- 285
-
Study to Transfer 0.11μm DRAM ArF Process to KrF Process in LithoLiu, J. / Yao, E. / Fan, E. / Chang, K. / Lv, T. / Zhang, J. / Liang, L. / Hong, J. / Li, M. et al. | 2011
- 303
-
Studying Photoresist Type for Sub-32nm Node Dense SRAM 2nd GT LayerXu, Y. / Hao, J. / Liu, C. / Shi, X. / Wu, Q. / Gu, Y. et al. | 2011
- 311
-
Selective Removal of High-k DielectricsShamiryan, D. / Paraschiv, V. et al. | 2011
- 319
-
Active Area Width and Topography Effects on Sub 45nm Poly Gate CDShen, M. / Meng, X. / Huang, Y. / Zhang, H. / Chang, S. / Lee, K. / Gu, Y. et al. | 2011
- 325
-
Reverse Phase Solution for Mesa Chamber Uniformity ImprovementGe, Q. / Huang, Y. / Tang, X. et al. | 2011
- 329
-
Plasma Etch Challenges for Porous Low k Materials for 32nm and BeyondLabelle, C. / Srivastava, R. / Arnold, J.C. / Yin, Y. / Ishikawa, M. / Mignot, Y. / Yusuff, H. / Linville, J. / Horak, D. / Fuller, N. et al. | 2011
- 335
-
Dry Etch Process Effects on Cu/low-k Dielectric Reliability for Advanced CMOS TechnologiesZhou, J. / Sun, W. / Zhang, H. / Hu, M. / Li, F. / Song, X. / Chang, S. / Lee, K. et al. | 2011
- 343
-
New Al Post-Etch Residue Remover with Al Surface Passivation FunctionWei, J.C. / Huang, M. et al. | 2011
- 349
-
WAT and VBD Distribution Improvement on Low-K Trench All-in-one ProcessHendrianto, J. / Zhijie, H. / Liu, A. et al. | 2011
- 355
-
Clean Mode Al Etch Process Development for Defect ReductionQiang, F. / Huang, C. / Hendrianto, J. / Song, J. / Lv, M. / Wang, K. / Shi, C. et al. | 2011
- 361
-
Dummy Poly Silicon Gate Removal by Wet Chemical EtchingYoung, T. / Yin, H. / Xu, Q. / Zhao, C. / Li, J. / Chen, D. et al. | 2011
- 365
-
Theoretical And Experimental Development Of Advanced Dopant-Sensitive SystemsZhang, P. / Zhang, L. / Ye, Y. / Yang, Y. et al. | 2011
- 371
-
Ultrapure Water-Related Problems and Waterless Cleaning ChallengesHattori, T. et al. | 2011
- 377
-
Dry Etch Fin Patterning of a Sub-22nm Node SRAM Cell: EUV Lithography New Dry Etch ChallengesAltamirano-Sanchez, E. / Yamaguchi, Y. / Lindain, J. / Horiguchi, N. / Ercken, M. / Demand, M. / Boullart, W. et al. | 2011
- 383
-
Effect of O~2/Ar Ratio on Etching of Diamond Films by MPCVDWang, S. / Zhang, K. / Taofeng, Z. / Ren, J. et al. | 2011
- 389
-
Porous SiOCH Integration: Etch Challenges with a Trench First Metal Hard Mask ApproachPosseme, N. / David, T. / Chevolleau, T. / Darnon, M. / Brun, P. / Guillermet, M. / Oddou, J. / Barnola, S. / Bailly, F. / Bouyssou, R. et al. | 2011
- 395
-
Plasma Etching Parameters Impact To Low-k DamageZhang, J. / Pei, H. / Cheng, L. et al. | 2011
- 399
-
Prevention of AlCu Line Galvanic Corrosion after Fluoride Containing Stripper Cleaning: A Case StudyLuo, V. / Chang, J. / Shi, K. / Liu, B. / Peng, L. / Wang, A. / Sun, J. et al. | 2011
- 405
-
Highly Selective Etching Solutions for Advanced Logic TechnologiesWang, X. / Zhang, H. / Chang, S. / Lee, K. et al. | 2011
- 409
-
Discovering Practical Use of Sensor Wafers in CCP ReactorsMilenin, A. / Demand, M. / Boullart, W. / Arleo, P. et al. | 2011
- 415
-
Study on Silicon Sieve Holes Array for Future Lithography ApplicationSi, W. / Yin, M. / Qin, J. / Liu, Z. et al. | 2011
- 421
-
Controlled Etching of III-V Materials with Optical Emission Interferometry (OEI)Johnson, C. / Johnson, D. / Westerman, R. / Geerpuram, D. / Martinez, L. / Plumhoff, J. et al. | 2011
- 427
-
Low Silicon and SiGe Loss in High Dose Implant Resist StripMeng, X. / Shen, M. / Huang, Y. / Zhang, H. / Chang, S. / Lee, K. et al. | 2011
- 433
-
Effluent Management for Non-Oxidizing Plasma Strip ProcessesLuo, S. / Waldfried, C. / Escorcia, O. / Berry, I. / Geissbuhler, P. / Srivastava, A. / Roh, D. et al. | 2011
- 439
-
Wafer Backside Particle Reduction By Optimizing AC3 Coating for Poly Etch ChamberMa, B. / Liu, W. / Niu, F. / Xia, J. / Cheng, L. / Liang, K. et al. | 2011
- 445
-
The Study of Dry Etching Process on Plasma Induced Damage in Cu Interconnects TechnologyZhou, J. / Zhang, H. / Sun, W. / Wang, X. / Hu, M. / Li, F. / Fu, L. / Chang, S. / Lee, K. et al. | 2011
- 455
-
Selective Epitaxial Growth: Trends in a Modern Transistor Device FabricationHikavyy, A.Y. / Vanherle, W. / Dekoster, J. / Witters, L. / Hoffmann, T. / Loo, R. et al. | 2011
- 467
-
Electron States at Interfaces of Semiconductors and Metals with Insulating FilmsAfanas ev, V.V. / Houssa, M. / Stesmans, A. et al. | 2011
- 473
-
Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory ApplicationsAdelmann, C. / Swerts, J. / Conard, T. / Brijs, B. / Franquet, A. / Hardy, A. / Tielens, H. / Opsomer, K. / Moussa, A. / Van Bael, M.K. et al. | 2011
- 479
-
Evolution of STI Gap Fill TechnologyChen, J.C. / Chen, Y. / Gao, R. / Cheng, C. / Li, X. / Zhao, G. / Chan, D. / Lee, T. et al. | 2011
- 483
-
Annealing Effect on the Electrical Properties of La~2O~3/InGaAs MOS CapacitorsKanda, T. / Zade, D. / Lin, Y.C. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Nishiyama, A. / Sugii, N. / Chang, E.Y. / Natori, K. et al. | 2011
- 489
-
Metal Inserted Poly-Si Stacks with La~2O~3 Gate Dielectrics for Scaled EOT and V~F~B Control by Oxygen IncorporationKawanago, T. / Kakushima, K. / Ahmet, P. / Tsutsui, K. / Nishiyama, A. / Sugii, N. / Natori, K. / Hattori, T. / Iwai, H. et al. | 2011
- 495
-
Characteristics of HfSiAlON Gate Dielectric Prepared by Physical Vapor DepositionXu, G. / Xu, Q. et al. | 2011
- 503
-
Deposition of VO~X Films by Reactive Sputtering and its PropertiesWei, X. / Zhang, K. / Fang, W. / Wang, L. / Zhang, Y. / Song, K. et al. | 2011
- 509
-
ALD Ru and its Application in DRAM MIM-Capacitors and InterconnectSchaekers, M. / Swerts, J. / Altimime, L. / Tokei, Z. et al. | 2011
- 515
-
Evaluation of Metallization Options for Advanced Cu Interconnects ApplicationJourdan, N. / Carbonell, L. / Heylen, N. / Swerts, J. / Armini, S. / Caro, A. / Demuynck, S. / Croes, K. / Beyer, G. / Tokei, Z. et al. | 2011
- 523
-
Fine Pitch Micro-Bump Interconnections for Advanced 3D Chip StackingZhang, W. / Limaye, P. / La Manna, A. / Beyne, E. / Soussan, P. et al. | 2011
- 529
-
Temperature and Stress effects on IMC Behavior of Thin Film Cu-Al System in Wire BondMing, X. / Fan, K. et al. | 2011
- 535
-
Review of Silicon Nanowire OxidationShi, X. / Kurstjens, R. / Vos, I. / Everaert, J. / Schaekers, M. et al. | 2011
- 541
-
Effect of Film Thickness on Resistance Switching Characteristics for Cu/NiO/Pt StructureZhang, Y. / Zhang, K. / Fang, W. / Wei, X. / Zhao, J. et al. | 2011
- 547
-
Optical Constants of ZnO FilmsHuang, B. / Yang, H. et al. | 2011
- 551
-
Influence of the Pressure on ZnO:Al Film Deposited by DC Magnetron Reactive SputteringYu, S. / Yang, H. / Huang, B. / Shi, J. / Zeng, L. et al. | 2011
- 557
-
Study of the Electrical and Optical Properties of the Silicon Carbide Thin FilmLuo, R. / Yang, H. / Huang, B. / Xu, B.Y. et al. | 2011
- 563
-
Influence of Vacuum-Annealing Temperature on the Properties of Direct Current (DC) Magnetron Sputtered ZAO Thin FilmsShi, J. / Yang, H. / Huang, B. / Xu, B. / Yu, S. et al. | 2011
- 567
-
Study of Phosphorus Out-Diffusion from High Density Plasma CVD Phosphosilicate Glass ProcessMin, L. / Ying, Z. / Xu, Q. et al. | 2011
- 571
-
Effects of Substrate Temperature on Resistive Switching of TiO~X Thin FilmWang, L. / Zhang, K. / Fang, W. / Song, K. et al. | 2011
- 577
-
Electrical and Optical Properties of Zinc Oxide Thin Films Deposited by Magnetron SputteringDing, X. / Lai, Y. et al. | 2011
- 583
-
A Highly Conductive Bimodal Isotropic Conductive Adhesive and Its ReliabilityLi, D. / Cui, H. / Chen, S. / Fan, Q. / Yuan, Z. / Ye, L. / Liu, J. et al. | 2011
- 591
-
Challenges and Mechanisms of CMP Slurries for 32nm and BeyondMorinaga, H. / Tamai, K. et al. | 2011
- 597
-
A Study on Optimized Conditioner for Soft Pad in Cu Barrier RemovalYoon, S. / Lee, J.H. et al. | 2011
- 603
-
Overcome Challenges in TSV CMP via Slurry FormulationLuo, K. / Wang, C. / Jing, J. / Xu, S. et al. | 2011
- 609
-
Investigation on the Correlationship between Process Performances and Composition of CMP Slurry Designed for GST Alloy PolishingPang, K. / Chen, F. / Jiang, L. / Li, M. / Zhong, M. et al. | 2011
- 615
-
Fundamental Characterization Studies of Condensed Chemical Mechanical Polishing Waste SlurryYamada, Y. / Kawakubo, M. / Watanabe, S. / Sugaya, T. et al. | 2011
- 621
-
Correlation of Pad Topography, Friction Force and Removal Rate during Tungsten Chemical Mechanical PlanarizationSampurno, Y. / Rice, A. / Zhang, Y. / Philipossian, A. et al. | 2011
- 627
-
Tribological and Kinetical Analysis of Barrier Metal Polishing for Next Generation Copper InterconnectsMateo, R.D. / Gu, X. / Nemoto, T. / Sugawa, S. / Zhuang, Y. / Sampurno, Y. / Philipossian, A. / Ohmi, T. et al. | 2011
- 633
-
Finite Element Analysis (FEA) of Pad Deformation Due to Diamond Disc Conditioning in Chemical Mechanical Polishing (CMP)Baisie, E. / Lin, B. / Zhang, X. / Li, Z. et al. | 2011
- 639
-
Data Driven CMP Manufacturing Modeling for Process and Design OptimizationSong, L.J. / Mehrotra, V. et al. | 2011
- 647
-
Ge- and III/V-CMP for Integration of High Mobility Channel MaterialsOng, P. / Witters, L. / Waldron, N. / Leunissen, L. et al. | 2011
- 653
-
Advanced Direct-Polish Process on Organic Non-Porous Ultra Low-k Fluorocarbon Dielectric on Cu InterconnectsGu, X. / Nemoto, T. / Tomita, Y. / Mateo, R.D. / Teramoto, A. / Kuroki, S. / Sugawa, S. / Ohmi, T. et al. | 2011
- 659
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Effect of Slurry Application/Injection Methods and Polishing Conditions on Bow Wave CharacteristicsLiao, X. / Sampurno, Y. / Zhuang, Y. / Sudargho, F. / Rice, A. / Philipossian, A. et al. | 2011
- 665
-
Evolution of Post CMP Cleaning TechnologyBanerjee, G. et al. | 2011
- 671
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Cleaning Aspects of Novel Materials after CMPVos, R. / Wada, M. / Arnauts, S. / Takahashi, H. / Cuypers, D. / Stuyf, H. / Mertens, P. et al. | 2011
- 677
-
Study on the Ring Type Crater Defect Reduction in Cu CMP ProcessXu, J. / Lin, P. / Xing, C. / Li, P. / Ma, Z. et al. | 2011
- 683
-
New Application of Optical Endpoint System: In Situ Cu Residue DetectionZhang, W. / Wang, X. / Tan, C. / Wang, S. / Shen, W. / Ge, G. et al. | 2011
- 691
-
The Mechanism of Organic Base and Surfactant in Silicon Wafer CMP ProcessWeiwei, L. et al. | 2011
- 699
-
Modeling Copper Chemical Mechanical Polishing Processes Using Linear System MethodWu, L. / Yan, C. et al. | 2011
- 705
-
Effect of pH on CMP of VOx Thin Films for RRAMLiguo, Y. / Zhang, K. / Fang, W. / Wei, X. / Taofeng, Z. et al. | 2011
- 711
-
Study of Inhibition effects on Copper CMP Slurry PerformanceJing, J. / Ma, Z. / Li, P. / Lu, C. / Lin, P. / Zhang, J. / Cai, X. et al. | 2011
- 719
-
SiON Gate Dielectric Optimization for NBTI ImprovementChen, Y. / He, Y. / Wang, W. / Guo, R. / Tang, Z. / Liu, J. / Wu, J. / Ju, J. et al. | 2011
- 725
-
Analysis of the Temperature Dependence of Trap-Assisted-Tunneling in Ge pFET JunctionsGonzalez, M.B. / Eneman, G. / Wang, G. / De Jaeger, B. / Simoen, E. / Claeys, C. et al. | 2011
- 731
-
eSiGe Global and Micro Loading Effect Study in High Performance 45nm CMOS TechnologyHe, Y. / Tu, H. / Lin, J. / Song, H. / Wang, J. / Ma, G. / Xu, W. / Ye, B. / Yu, T. / Wu, J. et al. | 2011
- 737
-
Investigation of Laser Spike Anneal Dwell Time and It's Compatibility with Embedded-SiGeHe, Y. / Chen, Y. / Lu, J. / Wu, J. / Xu, C. / Yu, T. / Owen, D.M. / Zhang, Y. / Shetty, S. et al. | 2011
- 743
-
A Robust Shallow Trench Isolation High Density Plasma Chemical Vapor Deposition Void Free Process for 0.13μm CMOS TechnologyNing, G. / Lin, P. / Xing, C. / Bian, A. / Zhao, H. / Cao, Y. et al. | 2011
- 749
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CMP-Less Planarization Technology with SOG/LTO Etchback for Low Cost 70nm Gate-Last ProcessYin, H. / Men, L. / Yang, T. / Xu, G. / Xu, Q. / Zhao, C. / Chen, D. et al. | 2011
- 755
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Etch and Wet Clean Challenges and Joint OptimizationYen, B. / Lin, J. / Lee, C. / Hegarty, M. / Loewenhardt, P. et al. | 2011
- 761
-
Growth and Processing Defects in CMOS Homo- and Hetero-EpitaxySimoen, E. / Gonzalez, M.B. / Eneman, G. / Rosseel, E. / Hikavyy, A.Y. / Kobayashi, D. / Loo, R. / Caymax, M. / Claeys, C. et al. | 2011
- 769
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Precise Control of Spike Anneal Process for Advanced CMOSZhao, Z. / Tang, J. / Zhao, G. et al. | 2011
- 775
-
Improving Copper Interconnect Reliability via Ta/Ti Based BarrierHu, X. / Lin, P. / Ma, J. / Jiang, J. / He, P. et al. | 2011
- 781
-
Glue Layer Study of Inter Via between Cu and Al Metal LinesChen, J. / Qiao, C. / Yang, L. / Chang, K. et al. | 2011
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The Influence of The SIN Cap Process on The Voltage Breakdown and Electromigration Performance of Dual Damascene Cu InterconnectsCao, Y. / Xing, C. / Xu, N. / Zhou, H. / Bian, A. / Lin, P. et al. | 2011
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Effect of RF Power on Carbon Nanotubes Synthesized at Low Temperature by RF PECVDLin, X. / Zhang, K. / Hu, K. / Qiang, X. / Wang, S. et al. | 2011
- 799
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Improving Yield with High-Performance CablesWarren, P. et al. | 2011
- 805
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Study on the Reliability of Fast Curing Isotropic Conductive AdhesiveDu, W. / Cui, H. / Chen, S. / Yuan, Z. / Ye, L. / Liu, J. et al. | 2011
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The Effect of Functionalized Silver on Rheological and Electrical Properties of Conductive AdhesivesFan, Q. / Cui, H. / Fu, C. / Li, D. / Tang, X. / Yuan, Z. / Ye, L. / Liu, J. et al. | 2011
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Microstructural Evolution of Sn3.0Ag0.5Cu3.0Bi0.05Cr/Cu Solder Joints During Thermal Aging and Its Effects on Mechanical PropertiesLin, F. / Bi, W. / Ju, G. / Wei, X. et al. | 2011
- 825
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Study of EMC for Cu Bonding Wire ApplicationTakeda, T. / Seki, H. / Itoh, S. / Zenbutsu, S. et al. | 2011
- 831
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Corrosion of Gold and Copper Ball BondsBreach, C.D. / Ng, H. / Lee, T. / Holliday, R. et al. | 2011
- 843
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Cost-effective Use of Gold Wire in Semiconductor PackagingVath, C.J. / Holliday, R. et al. | 2011
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Copper Wire Bonding in High Volume ManufacturingAppelt, B.K. / Tseng, A. / Lai, Y. / Chen, C. et al. | 2011
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MUF Technology Development for SiP ModuleKweon, Y. / Ha, J. / Kim, K. / Jang, M. / Doh, J. / Lee, C. / Yoo, D. et al. | 2011
- 873
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Multi Beam Grooving and Full Cut Laser Dicing of IC WafersBorkulo, J.V. / Hendriks, R. et al. | 2011
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Advanced Bump Structure for Improving the Board Level Characteristics of WLCSPLee, C. / Choi, J. / Kim, J. / Choi, S. / Yoo, D. / Park, S. / Kweon, Y. et al. | 2011
- 887
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Plasma Cleaning Effect on Automotive DevicesChew, Y.P. / Aw, T. et al. | 2011
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Packaging Issues for High-Voltage Power Electronic ModulesAng, S.S. / Evans, T. / Zhou, J. / Schirmer, K. / Zhang, H. / Rowden, B. / Balda, J. / Mantooth, A. et al. | 2011
- 901
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IDDQ Test Practice in NanotechnologiesYe, S.X. / Shen, C. / Liu, Z. / Liyun, Q. et al. | 2011
- 907
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Cost-Effective and Accurate Solution for Jitter Performance Test in High-Speed Serial LinksLu, M. et al. | 2011
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Plasma Etching for Failure Analysis of Integrated Circuit PackagesTang, J. / Schelen, J. / Beenakker, C. et al. | 2011
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Process optimization of contact module in NOR flash using high resolution c-beam inspectionLiao, Hsiang-Chou / Hung, Che-Lun / Luoh, Tuung / Yang, Ling-Wu / Yang, Tahone / Chen, Kuang-Chao / Lu, Chih-Yuan et al. | 2011
- 919
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Process Optimization of Contact Module in NOR Flash Using High Resolution e-Beam InspectionLiao, H.C. / Hung, C.L. / Luoh, T. / Yang, L. / Yang, T. / Chen, K. / Lu, C. et al. | 2011
- 925
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Verification of Systematic Defects Using e-Beam Defect Review SystemLuoh, T. / Yang, L. / Yang, T. / Chen, K. / Lu, C. et al. | 2011
- 931
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Determining Coherence length of X-ray Beam Utilizing Line Grating StructuresLee, H. / Soles, C.L. / Wu, W. et al. | 2011
- 937
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TSV/3DIC Profile Metrology Based on Infrared Microscope ImageTang, J. / Lay, Y. / Chen, L. / Lin, L. et al. | 2011
- 943
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Endpoint Detection in Plasma Etching Using Principal Component Analysis and Expanded Hidden Markov ModelKim, M. / Kim, S. / Zhao, S. / Hong, S. / Han, S. et al. | 2011
- 949
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Improvement of In-line SCD Metrology on BEOL Copper CMP Erosion Layers for 65nm Technology Node Logic Production ApplicationRong, C. / Wang, Z. / Yin, Z. / Tan, Z. / Zhao, L. et al. | 2011
- 955
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Spectral Sensitivity Analysis of OCD Based on Muller Matrix FormulismYaoming, S. / Zhensheng, Z. / Guoxiang, L. / Zhijun, L. / Yiping, X. et al. | 2011
- 961
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A Method to Determine Process Capability Cpk and Corresponding Percentage of Non-Conforming for Non-Normally Distributed and Limited Production DataYang, S.F. et al. | 2011
- 967
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High Voltage Device Negative Bias Temperature Instability Improvement with Different Process ConditionsSim, P. / Koo, S. / Pal, D. et al. | 2011
- 973
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Study The Mixed-Mode Delamination of The Epoxy/Cu InterfaceLiu, Y. / Wang, J. et al. | 2011
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LDMOS Thermal SOA Investigation of a Novel 800V Multiple RESURF with Linear P-top RingsHerlambang, A.P. / Sheu, G. / Guo, Y. / Wasisto, H. et al. | 2011
- 985
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Investigation of Lateral Die Crack Failure at Reliability TestSoh, Y. / Tan, C. / Chen, X. / Chua, K. / Du, R. / Xi, Y. / Lim, T. et al. | 2011
- 991
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Study on the Reliability of Nano-Structured Polymer-Metal Composite for Thermal Interface MaterialZhang, L. / Luo, X. / Lu, X. / Liu, J. et al. | 2011
- 997
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Failure Mechanism and Testing of PCB Pad CrateringXie, D. / Cai, M. / Wu, B. / Geiger, D. / Shangguan, D. / Martin, I. et al. | 2011
- 1005
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FPGA Design with Double-Gate Carbon Nanotube TransistorsJamaa, M.B. / Gaillardon, P. / Fregonese, S. / De Marchi, M. / De Micheli, G. / Zimmer, T. / O Connor, I. / Clermidy, F. et al. | 2011
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Three-Dimensional (3D) Integration TechnologyOhba, T. et al. | 2011
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Electrical Quality of III-V/Oxide Interfaces: Good Enough for MOSFET DevicesBrammertz, G. / Alian, A. / Lin, H. / Nyns, L. / Sioncke, S. / Merckling, C. / Wang, W. / Caymax, M. / Hoffmann, T. et al. | 2011
- 1023
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Low Temperature Bonding with Thin Wafers for 3D IntegrationMatthias, T. / Kim, B. / Kettner, P. / Wimplinger, M. / Lindner, P. et al. | 2011
- 1029
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Vertical LED with Diamond-Like Carbon Interface for High-Power IlluminationSung, J.C. / Kan, K. / Sung, M. et al. | 2011
- 1035
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Alumina Abrasives for Sapphire Substrate PolishingMerricks, D. et al. | 2011
- 1041
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Experimental and Modeling on Atomic Layer Deposition Al~2O~3/n-InAs Metal-Oxide-Semiconductor Capacitors with Various Surface TreatmentsTrinh, H. / Chang, E. / Brammertz, G. / Lu, C. / Nguyen, H. / Tran, B. et al. | 2011
- 1047
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Effects of Surface Pretreatments on p-GaN/GZO Contact by rf Magnetron SputterWang, W. / Li, X. / Zhang, J. et al. | 2011
- 1053
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A Phase Change Memory Device Fabrication Technology Using Si~2Sb~2Te~6 for Low Power Consumption ApplicationLi, Y. / Wan, X. / Song, Z. / Xie, J. / Chenc, B. / Liu, B. / Wu, G. / Zhu, N. / Zhong, M. / Xu, J. et al. | 2011
- 1059
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Smart SystemsGessner, T. / Vogel, M. / Otto, T. / Schulz, S. / Baumann, R. et al. | 2011
- 1065
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Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility SubstratesLin, D. / Brammertz, G. / Sioncke, S. / Nyns, L. / Alian, A. / Wang, W. / Heyns, M. / Caymax, M. / Hoffmann, T. et al. | 2011
- 1071
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Characterization and Optical Properties of CdS Thin Films Grown by Chemical Bath DepositionZhang, W. / Cheng, S. et al. | 2011
- 1077
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Electroluminescence of End-Capped Poly[9,9-di-(2'-ethylhexyl)fluorenyl-2,7-diyl] Blended with F8BTZhang, Q. / Zhang, S. et al. | 2011
- 1087
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Enhancement of Luminance via Blending F8BT with Tetraphenyldiaminobiphenyl-Containing Hole Transport PolymerZhang, Q. et al. | 2011
- 1097
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Improvements on the Uniformity of a-Si Solar Thin Films by Using Auxiliary Magnetic FieldHu, L.C. / Chen, Y.P. / Chang, J. / Lee, J.J. / Chen, I. / Li, T.T. et al. | 2011
- 1103
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Hydrogenated Silicon Thin Film and Solar Cell Prepared by Electron Cyclotron Resonance Chemical Vapor Deposition MethodLee, C. / Chang, J. / Chu, Y. / Lien, C. / Chen, I. / Li, T. et al. | 2011
- 1109
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Properties of Multicrystalline Silicon Wafers Based on UMG MaterialJiang, T. / Yu, X. / Li, X. / Gu, X. / Wang, P. / Yang, D. et al. | 2011
- 1117
-
Defect Evaluation by Photoluminescence for Uniaxially Strained Si-On-InsulatorWang, D. / Yamamoto, K. / Gao, H. / Yang, H. / Nakashima, H. et al. | 2011
- 1123
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Effects of Transverse Magnetic Field on Thermal Fluctuations in the Melt of a Cz-Si Crystal GrowthLiu, X. / Liu, L. / Wang, Y. et al. | 2011
- 1129
-
Light Trapping for High Efficiency Heterojunction Crystalline Si Solar CellsWang, Q. / Xu, Y. / Iwaniczko, E. / Page, M. et al. | 2011
- 1135
-
Fabrication and Quantum Confinement Investigation of Ge Multiple Quantum Wells with Si~3N~4 BarriersChen, J. / Lee, S. / Huang, S. et al. | 2011
- 1145
-
Structural and Optical Properties of Porous SiGe/Si Multilayer FilmsZhou, B. / Li, X. / Pan, S.W. / Chen, S.Y. / Li, C. et al. | 2011
- 1151
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On the Impact of Heavy Doping on Grown-In Defects in Czochralski-Grown SiliconZhang, X. / Xu, W. / Chen, J. / Ma, X. / Yang, D. / Gong, L. / Tian, D. / Vanhellemont, J. et al. | 2011
- 1159
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The Influence Of Silicon Orientation On Surface Blistering Behaviors for Molecular Hydrogen Ion ImplantationHsiao, Y. / Liang, J. / Lin, C. et al. | 2011
- 1165
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Very High Deposition Rate of a-Si:H Thin Films by ECRCVDChiu, H.F. / Chang, Y.S. / Wu, J.Y. / Li, Y.S. / Chang, J. / Lee, C.C. / Chen, I. / Su, C.C. / Li, T.T. et al. | 2011