Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors [7939-89] (English)
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- New search for: Zhu, C.Y.
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- New search for: Li, X.
- New search for: Ozgur, U.
- New search for: Morkoc, H.
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- New search for: Zhu, C.Y.
- New search for: Wu, M.
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In:
Gallium nitride materials and devices
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7939 2G
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2011
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors [7939-89]
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Contributors:Kayis, C. ( author ) / Zhu, C.Y. ( author ) / Wu, M. ( author ) / Li, X. ( author ) / Ozgur, U. ( author ) / Morkoc, H. ( author ) / Chyi, Jen-Inn / SPIE (Society)
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Conference:Conference; 6th, Gallium nitride materials and devices ; 2011 ; San Francisco, CA
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Published in:Gallium nitride materials and devices ; 7939 2GPROCEEDINGS- SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING ; 7939 ; 7939 2G
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Publisher:
- New search for: SPIE
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Place of publication:Bellingham
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Publication date:2011-01-01
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Size:7939 2G
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Remarks:"SPIE Photonics West" --cover. Includes bibliographical references and index.
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 79390A
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Kelvin probe measurements of p-type GaNFoussekis, M. / Ni, X. / Morkoç, H. / Reshchikov, M. A. / Baski, A. A. et al. | 2011
- 79390B
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Fermi level effect on strain of Si-doped GaNXie, Jinqiao / Mita, Seiji / Collazo, Ramón / Rice, Anthony / Tweedie, James / Sitar, Zlatko et al. | 2011
- 79390C
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The role of fluorine ions in GaN heterojunction transistors: applications and stabilityChen, Kevin J. et al. | 2011
- 79390E
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Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substratesLeach, J. H. / Biswas, N. / Paskova, T. / Preble, E. A. / Evans, K. R. / Wu, M. / Ni, X. / Li, X. / Özgür, Ü. / Morkoç, H. et al. | 2011
- 79390H
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New factors affecting HFET stability, 1/f noise, and reliabilityHandel, Peter H. / Morkoç, Hadis et al. | 2011
- 79390I
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Point defects in GaN and related group-III nitrides studied by means of positron annihilationUedono, Akira / Ishibashi, Shoji / Chichibu, Shigefusa F. / Akimoto, Katsuhiro et al. | 2011
- 79390J
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Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)NGorczyca, I. / Suski, T. / Christensen, N. E. / Svane, A. et al. | 2011
- 79390M
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Bowing of biexciton binding in AlxGa1-xN ternary alloysYamada, Yoichi et al. | 2011
- 79390N
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Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performancesRyu, Han-Youl / Shim, Jong-In et al. | 2011
- 79390O
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Thermoelectric properties of MOCVD-grown AlInN alloys with various compositionsZhang, Jing / Tong, Hua / Liu, Guangyu / Herbsommer, Juan A. / Huang, G. S. / Tansu, Nelson et al. | 2011
- 79390P
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Hydrogen etch of GaN and its application to produce porous GaN cavesYeh, Yen-Hsien / Hsu, Ying-Chia / Wu, Yin-Hao / Chen, Kuei-Ming / Lee, Wei-I et al. | 2011
- 79390Q
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Plasmonic effects in In(Ga)NIvanov, Sergey V. / Shubina, Tatiana V. / Toropov, Alexey A. et al. | 2011
- 79390V
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Recent developments in AlGaN-based laser diodes for short ultraviolet regionYoshida, Harumasa / Kuwabara, Masakazu / Yamashita, Yoji / Uchiyama, Kazuya / Kan, Hirofumi et al. | 2011
- 79390W
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Recent results on the physical origin of the degradation of GaN-based LEDs and lasersMeneghini, M. / Trivellin, N. / Meneghesso, G. / Orita, K. / Takigawa, S. / Tanaka, T. / Ueda, D. / Zanoni, E. et al. | 2011
- 79390Y
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High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substratesRaring, James W. / Schmidt, Mathew C. / Poblenz, Christiane / Li, Ben / Chang, Yu-Chia / Mondry, Mark J. / Lin, You-Da / Krames, Michael R. / Craig, Richard / Speck, James S. et al. | 2011
- 79391A
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An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodesShim, Jong-In / Kim, Hyunsung / Shin, Dong-Soo / Ryu, Han-Youl et al. | 2011
- 79391C
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Modeling of III-nitride light-emitting diodes: progress, problems, and perspectivesKarpov, Sergey Yu. et al. | 2011
- 79391D
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Enhancement of external quantum efficiency in GaN based LEDsSon, Jun Ho / Lee, Jong-Lam et al. | 2011
- 79391E
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Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imagingYankovich, A. B. / Kvit, A. V. / Li, X. / Zhang, F. / Avrutin, V. / Liu, H. Y. / Izyumskaya, N. / Özgür, Ü. / Morkoç, H. / Voyles, P. M. et al. | 2011
- 79391G
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Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodesKolbe, Tim / Knauer, Arne / Stellmach, Joachim / Chua, Chris / Yang, Zhihong / Einfeldt, Sven / Vogt, Patrick / Johnson, Noble M. / Weyers, Markus / Kneissl, Michael et al. | 2011
- 79391J
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Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layersYang, Chih-Ciao / Sheu, Jinn-Kong / Huang, Min-Shun / Tu, Shang-Ju / Huang, Feng-Wen / Chang, Kuo-Hua / Lee, Ming-Lun / Lai, Wei-Chih et al. | 2011
- 79391O
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Two-dimensional drift-diffusion simulation of GaN HFETsFan, Qian / Morkoç, Hadis et al. | 2011
- 79391P
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Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channelsLeach, J. H. / Wu, M. / Morkoç, H. / Ramonas, M. / Matulionis, A. et al. | 2011
- 79391S
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1/f Noise in Schottky diodesHandel, Peter H. / Morkoç, Hadis et al. | 2011
- 79391T
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Fabrication and lasing characteristics of GaN nanopillarsLo, Ming-Hua / Cheng, Yuh-Jen / Kuo, Hao-Chung / Wang, Shing-Chung et al. | 2011
- 79391V
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Fabrication of high-efficiency LED using moth-eye structureSakurai, H. / Kondo, T. / Suzuki, A. / Kitano, T. / Mori, M. / Iwaya, M. / Takeuchi, T. / Kamiyama, S. / Akasaki, I. et al. | 2011
- 79391W
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Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substratesIzyumskaya, N. / Liu, S. J. / Okur, S. / Wu, M. / Avrutin, V. / Özgür, Ü. / Metzner, S. / Bertram, F. / Christen, J. / Zhou, L. et al. | 2011
- 79391X
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Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrateChiu, Ching-Hsueh / Lin, Da-Wei / Li, Zhen-Yu / Ling, Shih-Chun / Kuo, Hao-Chung / Lu, Tien-Chang / Wang, Shing-Chung / Liao, Wei-Tasi / Tanikawa, Tomoyuki / Honda, Yoshio et al. | 2011
- 79391Z
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Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectorsJeong, Tak / Kim, Seung Whan / Baek, Jong Hyeob et al. | 2011
- 79392A
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Growth of GaN single crystals by a Ca- and Ba-added Na flux methodUkegawa, H. / Konishi, Y. / Fujimori, T. / Miyoshi, N. / Imade, M. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. et al. | 2011
- 79392B
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Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical modelJang, Yuseong / Jang, Dong-Hyun / Shim, Jong-In / Shin, Dong-Soo et al. | 2011
- 79392D
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Direct observation of lattice constant variations depending on layer structures in an InGaN/GaN MQW LEDKimura, Shigeya / Tachibana, Koichi / Oka, Toshiyuki / Nago, Hajime / Yoshida, Hisashi / Nunoue, Shinya et al. | 2011
- 79392E
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Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodesLiu, H. Y. / Li, X. / Liu, S. / Ni, X. / Avrutin, V. / Izyumskaya, N. / Özgür, Ü. / Yankovich, A. B. / Kvit, A. V. / Voyles, P. M. et al. | 2011
- 79392F
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Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETsKayis, Cemil / Leach, Jacob H. / Zhu, C. Y. / Wu, Mo / Li, X. / Yang, X. / Misra, Veena / Handel, Peter H. / Özgür, Ü. / Morkoç, H. et al. | 2011
- 79392G
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Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistorsKayis, Cemil / Zhu, C. Y. / Wu, Mo / Li, Xing / Özgür, Ümit / Morkoç, Hadis et al. | 2011
- 79392H
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Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor depositionLin, Hsien-Yu / Liu, Hsueh-Hsing / Liao, Chen-Zi / Chyi, Jen-Inn et al. | 2011
- 79392J
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Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) templateChen, Cheng-Yu / Siao, Li-Han / Chyi, Jen-Inn / Chao, Chih-Kang / Wu, Chih-Hung et al. | 2011
- 79392K
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Current spreading effect in vertical GaN/InGaN LEDsLi, Chi-Kang / Wu, Yuh-Renn et al. | 2011
- 793901
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Front Matter: Volume 7939| 2011
- 793902
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Growth of bulk GaN crystal by Na flux methodImade, M. / Miyoshi, N. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. et al. | 2011
- 793903
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Cathodoluminescence spectroscopy on selectively grown GaN nanowiresSchumann, T. / Gotschke, T. / Limbach, F. / Stoica, T. / Calarco, R. et al. | 2011
- 793904
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Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiationYamaguchi, Tomohiro / Araki, Tsutomu / Nanishi, Yasushi et al. | 2011
- 793905
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Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodesZhao, Hongping / Zhang, Jing / Liu, Guangyu / Toma, Takahiro / Poplawsky, Jonathan D. / Dierolf, Volkmar / Tansu, Nelson et al. | 2011
- 793907
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Photoluminescence of Mg-dopedm-plane GaN grown by MOCVD on bulk GaN substratesMonemar, Bo / Paskov, Plamen / Pozina, Galia / Hemmingsson, Carl / Bergman, Peder / Lindgren, David / Samuelson, Lars / Ni, Xianfeng / Morkoç, Hadis / Paskova, Tanya et al. | 2011
- 793910
-
The development of monolithic alternating current light-emitting diodeYeh, Wen-Yung / Yen, Hsi-Hsuan / Chan, Yi-Jen et al. | 2011
- 793913
-
Etching formation of GaN micro optoelectronic device arrayFan, Qian / Lee, Frank / Yadavalli, Kameshwar / Lee, Michael S. / Chuang, Chih-Li / El-Ghoroury, Hussein et al. | 2011
- 793916
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Unified model for the GaN LED efficiency droopPiprek, Joachim et al. | 2011
- 793917
-
Impact of ballistic electron transport on efficiency of InGaN based LEDsZhang, F. / Li, X. / Liu, S. / Okur, S. / Avrutin, V. / Özgür, Ü. / Morkoç, H. / Matulionis, A. / Kisin, M. et al. | 2011
- 793918
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InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodesChua, Christopher / Yang, Zhihong / Knollenberg, Clifford / Teepe, Mark / Cheng, Bowen / Strittmatter, Andre / Bour, David / Johnson, Noble M. et al. | 2011
- 793919
-
Properties of TCO anodes deposited by APCVD and their applications to OLEDsKorotkov, R. Y. / Ricou, P. / Fang, L. / Coffey, J. / Silverman, G. / Ruske, M. / Schwab, H. / Padmaperuma, A. B. / Gaspar, D. J. et al. | 2011
- 793920
-
Deep inductively coupled plasma etching of ELO-GaN grown with high fill factorGao, Haiyong / Lee, Jaesoong / Ni, Xianfeng / Leach, Jacob / Özgür, Ümit / Morkoç, Hadis et al. | 2011
- 793925
-
Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contactsLiu, Shu-Yen / Ye, Jhao-Cheng / Lin, Yu-Chuan / Chang, Kuo-Hua / Lee, Ming-Lun / Lai, Wei-Chih / Sheu, Jinn-Kong et al. | 2011
- 793927
-
High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) siliconKoukourakis, N. / Funke, D. A. / Gerhardt, N. C. / Hofmann, M. R. / Liebich, S. / Bückers, C. / Zinnkann, S. / Zimprich, M. / Beyer, A. / Chatterjee, S. et al. | 2011
-
Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes [7939-04]Zhao, H. / Zhang, J. / Liu, G. / Toma, T. / Poplawsky, J.D. / Dierolf, V. / Tansu, N. / SPIE (Society) et al. | 2011
-
Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes [7939-18]Kolbe, T. / Knauer, A. / Stellmach, J. / Chua, C. / Yang, Z. / Einfeldt, S. / Vogt, P. / Johnson, N.M. / Weyers, M. / Kneissl, M. et al. | 2011
-
Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers [7939-54]Yang, C.-C. / Sheu, J.-K. / Huang, M.-S. / Tu, S.-J. / Huang, F.-W. / Chang, K.-H. / Lee, M.-L. / Lai, W.-C. / SPIE (Society) et al. | 2011
-
Fabrication and lasing characteristics of GaN nanopillars [7939-65]Lo, M.-H. / Cheng, Y.-J. / Kuo, H.-C. / Wang, S.-C. / SPIE (Society) et al. | 2011
-
Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate [7939-69]Chiu, C.-H. / Lin, D.-W. / Li, Z.-Y. / Ling, S.-C. / Kuo, H.-C. / Lu, T.-C. / Wang, S.-C. / Liao, W.-T. / Tanikawa, T. / Honda, Y. et al. | 2011
-
Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives (Invited Paper) [7939-14]Karpov, S.Y. / SPIE (Society) et al. | 2011
-
Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors [7939-71]Jeong, T. / Kim, S.W. / Baek, J.H. / SPIE (Society) et al. | 2011
-
Growth of GaN single crystals by a Ca- and Ba-added Na flux method [7939-82]Ukegawa, H. / Konishi, Y. / Fujimori, T. / Miyoshi, N. / Imade, M. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. / SPIE (Society) et al. | 2011
-
Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model [7939-83]Jang, Y. / Jang, D.-H. / Shim, J.-I. / Shin, D.-S. / SPIE (Society) et al. | 2011
-
Direct observation of lattice constant variations depending on layer structures in an InGaN/GaN MQW LED [7939-85]Kimura, S. / Tachibana, K. / Oka, T. / Nago, H. / Yoshida, H. / Nunoue, S. / SPIE (Society) et al. | 2011
-
Plasmonic effects in In(Ga)N (Invited Paper) [7939-39]Ivanov, S.V. / Shubina, T.V. / Toropov, A.A. / SPIE (Society) et al. | 2011
-
Enhancement of external quantum efficiency in GaN based LEDs (Invited Paper) [7939-15]Son, J.H. / Lee, J.-L. / SPIE (Society) et al. | 2011
-
Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels [7939-61]Leach, J.H. / Wu, M. / Morkoc, H. / Ramonas, M. / Matulionis, A. / SPIE (Society) et al. | 2011
-
Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors [7939-89]Kayis, C. / Zhu, C.Y. / Wu, M. / Li, X. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Growth of crack-free semi-polar (1-101) GaN on a 7^o-off (001) Si substrate by metal-organic chemical vapor deposition [7939-90]Lin, H.-Y. / Liu, H.-H. / Liao, C.-Z. / Chyi, J.-I. / SPIE (Society) et al. | 2011
-
The development of monolithic alternating current light-emitting diode (Invited Paper) [7939-49]Yeh, W.-Y. / Yen, H.-H. / Chan, Y.-J. / SPIE (Society) et al. | 2011
-
Two-dimensional drift-diffusion simulation of GaN HFETs [7939-60]Fan, Q. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Fermi level effect on strain of Si-doped GaN [7939-24]Xie, J. / Mita, S. / Collazo, R. / Rice, A. / Tweedie, J. / Sitar, Z. / SPIE (Society) et al. | 2011
-
Point defects in GaN and related group-III nitrides studied by means of positron annihilation (Invited Paper) [7939-31]Uedono, A. / Ishibashi, S. / Chichibu, S.F. / Akimoto, K. / SPIE (Society) et al. | 2011
-
New factors affecting HFET stability, 1/f noise, and reliability [7939-30]Handel, P.H. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Etching formation of GaN micro optoelectronic device array [7939-52]Fan, Q. / Lee, F. / Yadavalli, K. / Lee, M.S. / Chuang, C.-L. / El-Ghoroury, H.S. / SPIE (Society) et al. | 2011
-
Impact of ballistic electron transport on efficiency of InGaN based LEDs [7939-09]Zhang, F. / Li, X. / Liu, S. / Okur, S. / Avrutin, V. / Ozgur, U. / Morkoc, H. / Matulionis, A. / Kisin, M. / SPIE (Society) et al. | 2011
-
Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor [7939-72]Gao, H. / Lee, J. / Ni, X. / Leach, J. / Ozgur, U. / Morkoc, H. / SPIE (Society) et al. | 2011
-
Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts [7939-77]Liu, S.-Y. / Ye, J.-C. / Lin, Y.-C. / Chang, K.-H. / Lee, M.-L. / Lai, W.-C. / Sheu, J.-K. / SPIE (Society) et al. | 2011
-
Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions [7939-37]Zhang, J. / Tong, H. / Liu, G. / Herbsommer, J.A. / Huang, G.S. / Tansu, N. / SPIE (Society) et al. | 2011
-
Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates [7939-68]Izyumskaya, N. / Liu, S.J. / Okur, S. / Wu, M. / Avrutin, V. / Ozgur, U. / Metzner, S. / Bertram, F. / Christen, J. / Zhou, L. et al. | 2011
-
Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances (Invited Paper) [7939-36]Ryu, H.-Y. / Shim, J.-I. / SPIE (Society) et al. | 2011
-
Recent developments in AlGaN-based laser diodes for short ultraviolet region (Invited Paper) [7939-43]Yoshida, H. / Kuwabara, M. / Yamashita, Y. / Uchiyama, K. / Kan, H. / SPIE (Society) et al. | 2011
-
High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon [7939-79]Koukourakis, N. / Funke, D.A. / Gerhardt, N.C. / Hofmann, M.R. / Liebich, S. / Buckers, C. / Zinnkann, S. / Zimprich, M. / Beyer, A. / Chatterjee, S. et al. | 2011
-
Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates [7939-27]Leach, J.H. / Biswas, N. / Paskova, T. / Preble, E.A. / Evans, K.R. / Wu, M. / Ni, X. / Li, X. / Ozgur, U. / Morkoc, H. et al. | 2011
-
Bowing of biexciton binding in Al~xGa~1~-~xN ternary alloys (Invited Paper) [7939-35]Yamada, Y. / SPIE (Society) et al. | 2011
-
High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates [7939-47]Raring, J.W. / Schmidt, M.C. / Poblenz, C. / Li, B. / Chang, Y.-C. / Mondry, M.J. / Lin, Y.-D. / Krames, M.R. / Craig, R. / Speck, J.S. et al. | 2011
-
Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template [7939-92]Chen, C.-Y. / Siao, L.-H. / Chyi, J.-I. / Chao, C.-K. / Wu, C.-H. / SPIE (Society) et al. | 2011
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Growth of bulk GaN crystal by Na flux method (Invited Paper) [7939-01]Imade, M. / Miyoshi, N. / Yoshimura, M. / Kitaoka, Y. / Sasaki, T. / Mori, Y. / SPIE (Society) et al. | 2011
-
Hydrogen etch of GaN and its application to produce porous GaN caves [7939-38]Yeh, Y.-H. / Hsu, Y.-C. / Wu, Y.-H. / Chen, K.-M. / Lee, W.-I. / SPIE (Society) et al. | 2011
-
Unified model for the GaN LED efficiency droop [7939-08]Piprek, J. / SPIE (Society) et al. | 2011
-
Properties of TCO anodes deposited by APCVD and their applications to OLEDs (Invited Paper) [7939-11]Korotkov, R.Y. / Ricou, P. / Fang, L. / Coffey, J. / Silverman, G. / Ruske, M. / Schwab, H. / Padmaperuma, A.B. / Gaspar, D.J. / SPIE (Society) et al. | 2011
-
Fabrication of high-efficiency LED using moth-eye structure [7939-67]Sakurai, H. / Kondo, T. / Suzuki, A. / Kitano, T. / Mori, M. / Iwaya, M. / Takeuchi, T. / Kamiyama, S. / Akasaki, I. / SPIE (Society) et al. | 2011
-
Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes [7939-87]Liu, H.Y. / Li, X. / Liu, S. / Ni, X. / Avrutin, V. / Izyumskaya, N. / Ozgur, U. / Yankovich, A.B. / Kvit, A.V. / Voyles, P.M. et al. | 2011
-
Kelvin probe measurements of p-type GaN [7939-23]Foussekis, M. / Ni, X. / Morkoc, H. / Reshchikov, M.A. / Baski, A.A. / SPIE (Society) et al. | 2011
-
Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N (Invited Paper) [7939-32]Gorczyca, I. / Suski, T. / Christensen, N.E. / Svane, A. / SPIE (Society) et al. | 2011
-
Recent results on the physical origin of the degradation of GaN-based LEDs and lasers (Invited Paper) [7939-44]Meneghini, M. / Trivellin, N. / Meneghesso, G. / Orita, K. / Takigawa, S. / Tanaka, T. / Ueda, D. / Zanoni, E. / SPIE (Society) et al. | 2011
-
InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes (Invited Paper) [7939-10]Chua, C. / Yang, Z. / Knollenberg, C. / Teepe, M. / Cheng, B. / Strittmatter, A. / Bour, D. / Johnson, N.M. / SPIE (Society) et al. | 2011
-
Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs [7939-88]Kayis, C. / Leach, J.H. / Zhu, C.Y. / Wu, M. / Li, X. / Yang, X. / Misra, V. / Handel, P.H. / Ozgur, U. / Morkoc, H. et al. | 2011
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Cathodoluminescence spectroscopy on selectively grown GaN nanowires (Invited Paper) [7939-02]Schumann, T. / Gotschke, T. / Limbach, F. / Stoica, T. / Calarco, R. / SPIE (Society) et al. | 2011
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An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes [7939-12]Shim, J.-I. / Kim, H. / Shin, D.-S. / Ryu, H.-Y. / SPIE (Society) et al. | 2011
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Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging (Invited Paper) [7939-94]Yankovich, A.B. / Kvit, A.V. / Li, X. / Zhang, F. / Avrutin, V. / Liu, H.Y. / Izyumska, N. / Ozgur, U. / Morkoc, H. / Voyles, P.M. et al. | 2011
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Current spreading effect in vertical GaN/InGaN LEDs [7939-93]Li, C.-K. / Wu, Y.-R. / SPIE (Society) et al. | 2011
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Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation (Invited Paper) [7939-03]Yamaguchi, T. / Araki, T. / Nanishi, Y. / SPIE (Society) et al. | 2011
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Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates (Invited Paper) [7939-20]Monemar, B. / Paskov, P. / Pozina, G. / Hemmingsson, C. / Bergman, P. / Lindgren, D. / Samuelson, L. / Ni, X. / Morkoc, H. / Paskova, T. et al. | 2011
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The role of fluorine ions in GaN heterojunction transistors: applications and stability (Invited Paper) [7939-25]Chen, K.J. / SPIE (Society) et al. | 2011
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1/f Noise in Schottky diodes [7939-64]Handel, P.H. / Morkoc, H. / SPIE (Society) et al. | 2011