Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy (English)
- New search for: Choi, H.Y.
- New search for: Cho, M.Y.
- New search for: Yim, K.G.
- New search for: Kim, M.S.
- New search for: Lee, D.-Y.
- New search for: Kim, J.S.
- New search for: Choi, H.Y.
- New search for: Cho, M.Y.
- New search for: Yim, K.G.
- New search for: Kim, M.S.
- New search for: Lee, D.-Y.
- New search for: Kim, J.S.
In:
Electronic materials; IUMRS-ICEM-2010
;
6-9
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2012
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ISSN:
- Conference paper / Print
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Title:Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy
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Contributors:Choi, H.Y. ( author ) / Cho, M.Y. ( author ) / Yim, K.G. ( author ) / Kim, M.S. ( author ) / Lee, D.-Y. ( author ) / Kim, J.S. ( author )
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Conference:International conference, Electronic materials; IUMRS-ICEM-2010 ; 2010 ; Ilsan, Korea
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Published in:MICROELECTRONIC ENGINEERING ; 89 ; 6-9
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Publisher:
- New search for: Elsevier
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Publication date:2012-01-01
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Size:4 pages
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Remarks:ESTAR title
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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