Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC (English)
- New search for: Alfieri, G.
- New search for: Kimoto, T.
- New search for: Alfieri, G.
- New search for: Kimoto, T.
- New search for: Okumura, Hajime
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC
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Contributors:
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Conference:International conference; 15th, Silicon carbide and related materials 2013: selected, peer reviewed papers from the 15th international conference on silicon carbide and related materials (ICSCRM 2013), September 29-October 4, 2013, Miyazaki, Japan / ; 2013 ; Miyazaki, Japan
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Published in:MATERIALS SCIENCE FORUM ; 778/780 ; 269-272
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Publisher:
- New search for: Trans Tech Publications Ltd
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Place of publication:Durnten-Zurich, Switzerland
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Publication date:2014-01-01
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Size:4 pages
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Remarks:Includes bibliographical references and index.
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Open Issues in SiC Bulk GrowthChaussende, D. / Ariyawong, K. / Tsavdaris, N. / Seiss, M. / Shin, Y.J. / Dedulle, J.M. / Madar, R. / Sarigiannidou, E. / La Manna, J. / Chaix-Pluchery, O. et al. | 2014
- 9
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Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed TomographyNeubauer, G. / Salamon, M. / Uhlmann, N. / Wellmann, P.J. et al. | 2014
- 13
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Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded SublimationTsavdaris, N. / Ariyawong, K. / Chaix-Pluchery, O. / Dedulle, J.M. / Sarigiannidou, E. / Chaussende, D. et al. | 2014
- 17
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Development of RAF Quality 150mm 4H-SiC WaferKondo, H. / Takaba, H. / Yamada, M. / Urakami, Y. / Okamoto, T. / Kobayashi, M. / Masuda, T. / Gunjishima, I. / Shigeto, K. / Ooya, N. et al. | 2014
- 22
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Impurity Behavior of High Purity SiC Powder during SiC Crystal GrowthShin, D.G. / Son, H.R. / Heo, S. / Kim, B.S. / Han, J.E. / Min, K.S. / Lee, D.H. et al. | 2014
- 26
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Effect of TaC-Coated Crucible on SiC Single Crystal GrowthLee, D.H. / Lee, H.T. / Bae, B.J. / Lee, H.J. / Lee, S.I. / Park, M.S. / Lee, W.J. / Yeo, I.G. / Eun, T.H. / Chun, M.C. et al. | 2014
- 31
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Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVTAriyawong, K. / Tsavdaris, N. / Dedulle, J.M. / Sarigiannidou, E. / Ouisse, T. / Chaussende, D. et al. | 2014
- 35
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Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVTAriyawong, K. / Blanquet, E. / Dedulle, J.M. / Ouisse, T. / Chaussende, D. et al. | 2014
- 39
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Spiral Step Dissociation on PVT Grown SiC CrystalsSeiss, M. / Ouisse, T. / Chaussende, D. et al. | 2014
- 43
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Reciprocal Space Mapping Studies of the Initial Stage of the PVT Growth of 4H-SiC Crystals Parallel and Perpendicular to the c-AxisOhshige, C. / Takahashi, T. / Ohtani, N. / Katsuno, M. / Fujimoto, T. / Sato, S. / Tsuge, H. / Yano, T. / Matsuhata, H. / Kitabatake, M. et al. | 2014
- 47
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Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping TechniqueKato, T. / Eto, K. / Takagi, S. / Miura, T. / Urakami, Y. / Kondo, H. / Hirose, F. / Okumura, H. et al. | 2014
- 51
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4H-SiC Bulk Growth Using High-Temperature Gas Source MethodTokuda, Y. / Kojima, J. / Hara, K. / Tsuchida, H. / Onda, S. et al. | 2014
- 55
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Fast 4H-SiC Crystal Growth by High-Temperature Gas Source MethodHoshino, N. / Kamata, I. / Tokuda, Y. / Makino, E. / Kojima, J. / Tsuchida, H. et al. | 2014
- 59
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Dislocation Analysis of 4H-SiC Crystals Obtained at Fast Growth Rate by the High-Temperature Gas Source MethodKamata, I. / Hoshino, N. / Tokuda, Y. / Makino, E. / Kojima, J. / Tsuchida, H. et al. | 2014
- 63
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Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiCUmezaki, T. / Koike, D. / Horio, A. / Harada, S. / Ujihara, T. et al. | 2014
- 67
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Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si SolventHarada, S. / Yamamoto, Y. / Xiao, S.Y. / Tagawa, M. / Ujihara, T. et al. | 2014
- 71
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Electromagnetic Enhancement of Carbon Transport in SiC Solution Growth Process: A Numerical Modeling ApproachAriyawong, K. / Dedulle, J.M. / Chaussende, D. et al. | 2014
- 75
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Solution Growth of p-Type 4H-SiC Bulk Crystals with Low ResistivityShirai, T. / Danno, K. / Seki, A. / Sakamoto, H. / Bessho, T. et al. | 2014
- 79
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Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal SolventsKusunoki, K. / Kamei, K. / Okada, N. / Moriguchi, K. / Kaido, H. / Daikoku, H. / Kado, M. / Danno, K. / Sakamoto, H. / Bessho, T. et al. | 2014
- 85
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Evolution of Fast 4H-SiC CVD Growth and Defect Reduction TechniquesTsuchida, H. / Kamata, I. / Ito, M. / Miyazawa, T. / Hoshino, N. / Fujibayashi, H. / Ito, H. / Naito, M. / Aoki, H. / Nishikawa, K. et al. | 2014
- 91
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Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation DensityTanaka, T. / Kawabata, N. / Mitani, Y. / Tomita, N. / Tarutani, M. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. / Yamakawa, S. et al. | 2014
- 95
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Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET ApplicationsCamarda, M. / Privitera, S. / Anzalone, R. / Piluso, N. / Fiorenza, P. / Alberti, A. / Pellegrino, G. / La Magna, A. / La Via, F. / Vecchio, C. et al. | 2014
- 99
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Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-AngleMasumoto, K. / Ito, S. / Goto, H. / Yamaguchi, H. / Tamura, K. / Kudou, C. / Nishio, J. / Kojima, K. / Ohno, T. / Okumura, H. et al. | 2014
- 103
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Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary ReactorThomas, B. / Hansen, D.M. / Zhang, J. / Loboda, M.J. / Uchiyama, J. / Toth, T.J. / Chung, G. / Manning, I.C. / Quast, J.P. / Mueller, S.G. et al. | 2014
- 109
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C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High ThroughputNishio, J. / Kudou, C. / Tamura, K. / Masumoto, K. / Kojima, K. / Ohno, T. et al. | 2014
- 113
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Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6x150 mm Warm-Wall Planetary ReactorBurk, A.A. / Tsvetkov, D. / O loughlin, M.J. / Ustin, S. / Garrett, L. / Powell, A.R. / Seaman, J. / Partin, N. et al. | 2014
- 117
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Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer RotationFujibayashi, H. / Ito, M. / Ito, H. / Kamata, I. / Naito, M. / Hara, K. / Yamauchi, S. / Suzuki, K. / Yajima, M. / Mitani, S. et al. | 2014
- 121
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4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106Mauceri, M. / Pecora, A. / Litrico, G. / Vecchio, C. / Puglisi, M. / Crippa, D. / Piluso, N. / Camarda, M. / La Via, F. et al. | 2014
- 125
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Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled SubstrateKojima, K. / Masumoto, K. / Ito, S. / Nagata, A. / Okumura, H. et al. | 2014
- 131
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Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC SubstrateLi, X. / Janzen, E. / Henry, A. et al. | 2014
- 135
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Epitaxial Growth of Thick Multi-Layer 4H-SiC for the Fabrication of Very High-Voltage C-Face n-Channel IGBTMiyazawa, T. / Ji, S.Y. / Kojima, K. / Ishida, Y. / Nakayama, K. / Tanaka, A. / Asano, K. / Tsuchida, H. et al. | 2014
- 139
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Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm phi (variant) Size SiC Epitaxial WaferKudou, C. / Tamura, K. / Nishio, J. / Masumoto, K. / Kojima, K. / Ohno, T. et al. | 2014
- 143
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Comparative Study of Defects in 4H-SiC Epilayers Grown on 4^o Off-Axis (0001) and (000-1) SubstratesAigo, T. / Itoh, W. / Fujimoto, T. / Yano, T. et al. | 2014
- 147
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An Approach to Trace Defects Propagation during SiC EpitaxyFan, Y.M. / Zhang, L.G. / Wang, J. / Zhang, X.M. / Zhang, Z.H. / Zhang, B.S. / Sudarshan, T.S. et al. | 2014
- 151
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Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC EpilayersJi, S.Y. / Kojima, K. / Ishida, Y. / Yamaguchi, H. / Saito, S. / Kato, T. / Tsuchida, H. / Yoshida, S. / Okumura, H. et al. | 2014
- 155
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Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas SupplyNagano, T. / Sato, K. et al. | 2014
- 159
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Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4^o Off-Axis SubstratesYazdanfar, M. / Pedersen, H. / Kordina, O. / Janzen, E. et al. | 2014
- 163
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50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary ReactorSun, Y.Q. / Feng, G. / Li, Z.Y. / Lv, L.P. / Luo, J.Y. / Wu, J.B. / Li, Y.Y. / Zhang, J.H. et al. | 2014
- 167
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Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth MethodMitani, Y. / Tomita, N. / Hamano, K. / Tarutani, M. / Tanaka, T. / Ohno, A. / Kuroiwa, T. / Toyoda, Y. / Imaizumi, M. / Sumitani, H. et al. | 2014
- 171
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Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm SubstratesIto, M. / Fujibayashi, H. / Ito, H. / Kamata, I. / Naito, M. / Hara, K. / Yamauchi, S. / Suzuki, K. / Yajima, M. / Mitani, S. et al. | 2014
- 175
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Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD ModelingSukkaew, P. / Ojamae, L. / Danielsson, O. / Kordina, O. / Janzen, E. et al. | 2014
- 179
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Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC WafersHassan, J.U. / Bae, H.T. / Lilja, L. / Farkas, I. / Kim, I. / Stenberg, P. / Sun, J.W. / Kordina, O. / Bergman, P. / Ha, S.Y. et al. | 2014
- 183
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Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster EffectIshida, Y. / Yoshida, S. et al. | 2014
- 187
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Ge Assisted SiC Epitaxial Growth by CVD on SiC SubstrateAlassaad, K. / Souliere, V. / Doisneau, B. / Cauwet, F. / Peyre, H. / Carole, D. / Chaussende, D. / Ferro, G. et al. | 2014
- 193
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4H-SiC Epitaxial Growth on C-Face 150 mm SiC SubstrateMiyasaka, A. / Norimatsu, J. / Fukada, K. / Tajima, Y. / Kageshima, Y. / Muto, D. / Odawara, M. / Okano, T. / Momose, K. / Osawa, Y. et al. | 2014
- 197
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Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial GrowthLiu, X.C. / Shi, B. / Xin, J. / Huang, W. / Liu, X. / Zheng, Y.Q. / Shi, E.W. et al. | 2014
- 201
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First-Principles Study of Nanofacet Formation on 4H-SiC(0001) SurfaceSawada, K. / Iwata, J.I. / Oshiyama, A. et al. | 2014
- 206
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Improved Epilayer Surface Morphology on 2^o Off-Cut 4H-SiC SubstratesLilja, L. / Hassan, J.u. / Janzen, E. / Bergman, P. et al. | 2014
- 210
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HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar DevicesKallinger, B. / Ehlers, C. / Berwian, P. / Rommel, M. / Friedrich, J. et al. | 2014
- 214
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Homo-Epitaxial Growth on 2^o Off-Cut 4H-SiC(0001) Si-Face Substrates Using H~2-SiH~4-C~3H~8 CVD SystemTamura, K. / Kudou, C. / Masumoto, K. / Nishio, J. / Kojima, K. et al. | 2014
- 218
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Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model ImprovementsDanielsson, O. / Kordina, O. / Janzen, E. et al. | 2014
- 222
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Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial LayerIshida, Y. / Yoshida, S. et al. | 2014
- 226
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Heteroepitaxial CVD Growth of 3C-SiC on Diamond SubstrateSouliere, V. / Vo-Ha, A. / Carole, D. / Tallaire, A. / Brinza, O. / Pinero, J.C. / Araujo, D. / Ferro, G. et al. | 2014
- 230
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The Influence of the Carbonization Mechanisms on the Crystalline Quality of the Carbonization Layer for Heteroepitaxial Growth of 3C-SiCWatanabe, Y. / Horikawa, T. / Kamimura, K. et al. | 2014
- 234
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3C-SiC Seeded Growth on Diamond Substrate by VLS TransportVo-Ha, A. / Rebaud, M. / Carole, D. / Lazar, M. / Tallaire, A. / Souliere, V. / Pinero, J.C. / Araujo, D. / Ferro, G. et al. | 2014
- 238
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Monte Carlo Study of the Early Growth Stages of 3C-Sic on Misoriented and 6H-SiC SubstratesCamarda, M. / La Magna, A. / La Via, F. et al. | 2014
- 243
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Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas AtmosphereKwasnicki, P. / Jokubavicius, V. / Sun, J.W. / Peyre, H. / Yakimova, R. / Syvajarvi, M. / Camassel, J. / Juillaguet, S. et al. | 2014
- 247
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A Study of the Intermediate Layer in 3C-SiC/6H-SiC HeterostructuresLebedev, A.A. / Zamoryanskaya, M.V. / Davydov, S.Y. / Kirilenko, D.A. / Lebedev, S.P. / Sorokin, L.M. / Shustov, D.B. / Scheglov, M.P. et al. | 2014
- 251
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Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si SubstratesMeguro, K. / Narita, T. / Noto, K. / Nakazawa, H. et al. | 2014
- 255
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Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor DepositionAnzalone, R. / Camarda, M. / Severino, A. / Piluso, N. / La Via, F. et al. | 2014
- 261
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Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor DepositionSledziewski, T. / Beljakowa, S. / Alassaad, K. / Kwasnicki, P. / Arvinte, R. / Juillaguet, S. / Zielinski, M. / Souliere, V. / Ferro, G. / Weber, H.B. et al. | 2014
- 265
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Persistent Conductivity in n-Type 3C-SiC Observed at Low TemperaturesBeljakowa, S. / Hauck, M. / Bockstedte, M. / Fromm, F. / Hundhausen, M. / Nagasawa, H. / Weber, H.B. / Pensl, G. / Krieger, M. et al. | 2014
- 269
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Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiCAlfieri, G. / Kimoto, T. et al. | 2014
- 273
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Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100^oC and 1500^oC and Measurements of Lifetime and PhotoluminescenceKlahold, W.M. / Devaty, R.P. / Choyke, W.J. / Kawahara, K. / Kimoto, T. / Ohshima, T. et al. | 2014
- 277
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Identification of Structures of the Deep Levels in 4H-SiCNakane, H. / Kato, M. / Ichimura, M. / Ohshima, T. et al. | 2014
- 281
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Oxidation Induced ON~1, ON~2~a~/~b Defects in 4H-SiC Characterized by DLTSBooker, I.D. / Abdalla, H. / Lilja, L. / Hassan, J.U. / Bergman, P. / Sveinbjornsson, E.O. / Janzen, E. et al. | 2014
- 285
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Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical CalculationsTrinh, X.T. / Szasz, K. / Hornos, T. / Kawahara, K. / Suda, J. / Kimoto, T. / Gali, A. / Janzen, E. / Son, N.T. et al. | 2014
- 289
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Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient SpectroscopyIwamoto, N. / Onoda, S. / Fujita, N. / Makino, T. / Ohshima, T. et al. | 2014
- 293
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Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiCKato, M. / Mori, Y. / Ichimura, M. et al. | 2014
- 297
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Diffusion of Alkali Metals in SiCLinnarsson, M.K. / Hallen, A. et al. | 2014
- 301
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Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCDKallinger, B. / Rommel, M. / Lilja, L. / Hassan, J.u. / Booker, I.D. / Janzen, E. / Bergman, P. et al. | 2014
- 305
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On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC SubstratesLiaugaudas, G. / Jarasiunas, K. / Tsavdaris, N. / Sarigiannidou, E. / Chaussende, D. et al. | 2014
- 309
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Basal Plane Dislocations from Inclusions in 4H-SiC EpitaxyStahlbush, R.E. / Mahadik, N.A. / O loughlin, M.J. et al. | 2014
- 313
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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC EpilayersNagano, M. / Kamata, I. / Tsuchida, H. et al. | 2014
- 319
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Polarized Photoluminescence from Partial Dislocations in 4H-SiCHirano, R. / Tajima, M. / Tsuchida, H. / Itoh, K.M. / Maeda, K. et al. | 2014
- 324
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Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC EpilayersMahadik, N.A. / Stahlbush, R.E. / Nath, A. / Tadjer, M.J. / Imhoff, E.A. / Feygelson, B.N. / Nipoti, R. et al. | 2014
- 328
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Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray TopographyWang, H.H. / Wu, F.Z. / Dudley, M. / Raghothamachar, B. / Chung, G. / Zhang, J. / Thomas, B. / Sanchez, E.K. / Mueller, S.G. / Hansen, D.M. et al. | 2014
- 332
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Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC EpilayerWang, H.H. / Wu, F.Z. / Byrapa, S.Y. / Yang, Y. / Raghothamachar, B. / Dudley, M. / Chung, G. / Zhang, J. / Thomas, B. / Sanchez, E. et al. | 2014
- 338
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Three-Dimensional Imaging of Extended Defects in 4H-SiC by Optical Second-Harmonic GenerationTanuma, R. / Tsuchida, H. et al. | 2014
- 342
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Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence ImagingKonishi, K. / Yamamoto, S. / Nakata, S. / Toyoda, Y. / Yamakawa, S. et al. | 2014
- 346
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Dislocation Revelation for 4H-SiC by Using Vaporized NaOH: A Possible Way to Distinguish Edge, Screw and Mixed Threading Dislocations by Etch Pit MethodYao, Y.Z. / Ishikawa, Y. / Sugawara, Y. / Sato, K. / Danno, K. / Suzuki, H. / Sakamoto, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. et al. | 2014
- 350
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TEM Observation of Defect Structure of Low-Energy Ion Implanted SiCKameda, T. / Tomita, A. / Matsui, T. / Isshiki, T. et al. | 2014
- 354
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Structure and Origin of Carrot Defects on 4H-SiC Homoepitaxial LayersDong, L. / Sun, G.S. / Yu, J. / Yan, G.G. / Zhao, W.S. / Wang, L. / Zhang, X.H. / Li, X.G. / Wang, Z.G. et al. | 2014
- 358
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Dislocation Analysis of 4H-SiC Using KOH Low Temperature EtchingSato, T. / Suzuki, Y. / Ito, H. / Isshiki, T. / Fukui, M. et al. | 2014
- 362
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Characterization of Damage Induced by Electric Discharge Machining and Wiresawing with Loose Abrasive at Subsurface of SiC CrystalIshikawa, Y. / Yao, Y.Z. / Sato, K. / Sugawara, Y. / Okamoto, Y. / Hayashi, N. et al. | 2014
- 366
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Characterization of Threading Edge Dislocation in 4H-SiC by X-Ray Topography and Transmission Electron MicroscopySugawara, Y. / Yao, Y.Z. / Ishikawa, Y. / Danno, K. / Suzuki, H. / Bessho, T. / Yamaguchi, S. / Nishikawa, K. / Ikuhara, Y. et al. | 2014
- 370
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Microstructural Analysis of Damaged Layer Introduced during Chemo-Mechanical PolishingSako, H. / Yamashita, T. / Tamura, K. / Sasaki, M. / Nagaya, M. / Kido, T. / Kawata, K. / Kato, T. / Kojima, K. / Tsukimoto, S. et al. | 2014
- 374
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Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray TopographyYamashita, T. / Matsuhata, H. / Miyasaka, Y. / Momose, K. / Sato, T. / Kitabatake, M. et al. | 2014
- 378
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Micro-Raman Characterization of 4H-SiC Stacking FaultsPiluso, N. / Camarda, M. / Anzalone, R. / La Via, F. et al. | 2014
- 382
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Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial LayersOdawara, M. / Kamei, K. / Miyasaka, Y. / Yamashita, T. / Takahashi, S. / Kageshima, Y. / Momose, K. / Osawa, H. / Sato, T. et al. | 2014
- 386
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Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon CarbideSugiyama, N. / Yamada, M. / Urakami, Y. / Kobayashi, M. / Masuda, T. / Shigetoh, K. / Gunjishima, I. / Hirose, F. / Onda, S. et al. | 2014
- 390
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Formation of Double Stacking Faults from Polishing Scratches on 4H-SiC (0001) SubstrateUshio, S. / Fujimoto, T. / Tsuge, H. / Katsuno, M. / Sato, S. / Tani, K. / Hirano, H. / Yano, T. et al. | 2014
- 394
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Nanomechanical Analysis of Triangular Defect in 4H-SiC EpilayerShin, Y.J. / Kim, S.I. / Jung, H.J. / Lee, C.W. / Bahng, W. et al. | 2014
- 398
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Analysis on Generation of Localized Step-Bunchings on 4H-SiC(0001)Si Face by Synchrotron X-Ray TopographySasaki, M. / Tamura, K. / Sako, H. / Kitabatake, M. / Kojima, K. / Matsuhata, H. et al. | 2014
- 402
-
Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron MicroscopyIsshiki, T. / Hasegawa, M. et al. | 2014
- 407
-
Nanoscale Characterization of SiC Interfaces and DevicesGiannazzo, F. / Fiorenza, P. / Saggio, M. / Roccaforte, F. et al. | 2014
- 414
-
C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic ResonanceUmeda, T. / Okamoto, M. / Arai, R. / Satoh, Y. / Kosugi, R. / Harada, S. / Okumura, H. / Makino, T. / Ohshima, T. et al. | 2014
- 418
-
Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel MobilityYoshioka, H. / Nakamura, T. / Senzaki, J. / Shimozato, A. / Tanaka, Y. / Okumura, H. / Kimoto, T. et al. | 2014
- 424
-
Deep-Level Transient Spectroscopy Characterization of Interface States in SiO~2/4H-SiC Structures Close to the Conduction Band EdgeHatakeyama, T. / Sometani, M. / Fukuda, K. / Okumura, H. / Kimoto, T. et al. | 2014
- 428
-
Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect TransistorsMartin, L.C. / Chan, H.K. / Clark, D. / Ramsay, E.P. / Murphy, A.E. / Smith, D.A. / Thompson, R.F. / Young, R.A.R. / Goss, J.P. / Wright, N.G. et al. | 2014
- 432
-
Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various ProcessesMori, Y. / Kato, M. / Ichimura, M. et al. | 2014
- 436
-
Drain-Current Deep Level Transient Spectroscopy Investigation on Epitaxial Graphene/6H-SiC Field Effect TransistorsRoensch, S. / Hertel, S. / Reshanov, S. / Schoner, A. / Krieger, M. / Weber, H.B. et al. | 2014
- 440
-
Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide ThicknessesDeki, M. / Makino, T. / Kojima, K. / Tomita, T. / Ohshima, T. et al. | 2014
- 444
-
Mechanical Properties and Residual Stress of Thin 3C-SiC(111) Films Determined Using MEMS StructuresHahnlein, B. / Stubenrauch, M. / Michael, S. / Pezoldt, J. et al. | 2014
- 449
-
Influence of P^+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC WafersIshiji, K. / Kawado, S. / Hirai, Y. / Nagamachi, S. et al. | 2014
- 453
-
Residual Stress Measurements of 4H-SiC Crystals Using X-Ray DiffractionNakabayashi, M. / Fujimoto, T. / Tsuge, H. / Kojima, K. / Abe, K. / Shimomura, K. et al. | 2014
- 457
-
Evaluation of Mechanical and Optical Properties of Hetero-Epitaxial Single Crystal 3C-SiC Squared-MembraneAnzalone, R. / D Arrigo, G. / Camarda, M. / Piluso, N. / Via, F.L. et al. | 2014
- 461
-
Temperature Dependence of Impact Ionization Coefficients in 4H-SiCNiwa, H. / Suda, J. / Kimoto, T. et al. | 2014
- 467
-
Improved Analytical Expressions for Avalanche Breakdown in 4H-SiCStum, Z. / Tang, Y. / Naik, H. / Chow, T.P. et al. | 2014
- 471
-
High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ^2^8Si^1^2C, Natural and ^1^3C - Enriched 4H-SiCIvanov, I.G. / Yazdanfar, M. / Lundqvist, B. / Chen, J.T. / Hassan, J.U. / Stenberg, P. / Liljedahl, R. / Son, N.T. / Ager, J.W. / Kordina, O. et al. | 2014
- 475
-
Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiCMitani, T. / Nakashima, S. / Tomobe, M. / Ji, S.Y. / Kojima, K. / Okumura, H. et al. | 2014
- 479
-
Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction MethodsHatayama, T. / Hori, R. / Yano, H. / Fuyuki, T. et al. | 2014
- 483
-
Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETsUhnevionak, V. / Burenkov, A. / Strenger, C. / Mortet, V. / Bedel-Pereira, E. / Cristiano, F. / Bauer, A.J. / Pichler, P. et al. | 2014
- 487
-
Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiCHurner, A. / Bonse, C. / Clemmer, G. / Kallinger, B. / Heckel, T. / Erlbacher, T. / Mitlehner, H. / Haublein, V. / Bauer, A.J. / Frey, L. et al. | 2014
- 491
-
High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz WavesHamano, A. / Ohno, S. / Minamide, H. / Ito, H. / Usuki, Y. et al. | 2014
- 495
-
Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiCIvady, V. / Abrikosov, I. / Janzen, E. / Gali, A. et al. | 2014
- 499
-
First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit ApplicationSzasz, K. / Ivady, V. / Janzen, E. / Gali, A. et al. | 2014
- 503
-
Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiCMiyake, K. / Yasuda, T. / Kato, M. / Ichimura, M. / Hatayama, T. / Ohshima, T. et al. | 2014
- 507
-
Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron MicroscopyAshida, K. / Kajino, T. / Kutsuma, Y. / Ohtani, N. / Kaneko, T. et al. | 2014
- 513
-
Thin PSG Process for 4H-SiC MOSFETSharma, Y.K. / Ahyi, A.C. / Isaacs-Smith, T. / Modic, A. / Xu, Y. / Granfukel, E. / Jennings, M.R. / Fisher, C. / Thomas, S.M. / Mawby, P.A. et al. | 2014
- 517
-
Depletion-Mode TDDB for n-Type MOS Capacitors of 4H-SiCWatanabe, T. / Hino, S. / Ebiike, Y. / Miura, N. / Imaizumi, M. / Yamakawa, S. et al. | 2014
- 521
-
Threshold Voltage Instability of SiC-MOSFETs on Various Crystal FacesSenzaki, J. / Shimozato, A. / Kojima, K. / Harada, S. / Ariyoshi, K. / Kojima, T. / Tanaka, Y. / Okumura, H. et al. | 2014
- 525
-
Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide StabilityFlorentin, M. / Alexandru, M. / Constant, A. / Schmidt, B. / Millan, J. / Godignon, P. et al. | 2014
- 529
-
Unexpected Effect of Thermal Storage Observed on SiC Power DMOSFETChbili, Z. / Shreshta, P.R. / Campbell, J.P. / Suehle, J.S. / Ioannou, D.E. / Cheung, K.P. et al. | 2014
- 533
-
Radiation-Induced Trapped Charging Effects in SiC Power MOSFETsGreen, R. / Lelis, A. / Urciuoli, D. / Litz, M. / Carroll, J. et al. | 2014
- 537
-
Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate OxideKojima, T. / Harada, S. / Ariyoshi, K. / Senzaki, J. / Takei, M. / Yonezawa, Y. / Tanaka, Y. / Okumura, H. et al. | 2014
- 541
-
Degradation of SiO~2/SiC Interface Properties due to Mobile Ions Intrinsically Generated by High-Temperature Hydrogen AnnealingChanthaphan, A. / Hosoi, T. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H. et al. | 2014
- 545
-
Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP TreatmentYamada, K. / Ishiyama, O. / Tamura, K. / Yamashita, T. / Shimozato, A. / Kato, T. / Senzaki, J. / Matsuhata, H. / Kitabatake, M. et al. | 2014
- 549
-
Characterization of La~xHf~yO Gate Dielectrics in 4H-SiC MOS CapacitorXia, J.H. / Martin, D.M. / Suvanam, S.S. / Zetterling, C.M. / Ostling, M. et al. | 2014
- 553
-
Si Emission into the Oxide Layer during Oxidation of Silicon CarbideHijikata, Y. / Akasaka, Y. / Yagi, S. / Yaguchi, H. et al. | 2014
- 557
-
High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO~2Yang, X.Y. / Lee, B.M. / Misra, V. et al. | 2014
- 562
-
Retarded Oxide Growth on 4H-SiC(0001) Substrates due to Sacrificial OxidationHosoi, T. / Uenishi, Y. / Nakano, Y. / Nakamura, T. / Shimura, T. / Watanabe, H. et al. | 2014
- 566
-
Nano-Scale Native Oxide on 6H-SiC Surface and its Effect on the Ni/Native Oxide/SiC Interface Band BendingHuang, W. / Liu, X. / Liu, X.C. / Zhou, T.Y. / Zhuo, S.Y. / Zheng, Y.Q. / Yang, J.H. / Shi, E.W. et al. | 2014
- 571
-
MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFETOno, S. / Waki, E. / Arai, M. / Yamasaki, K. / Takagi, S. et al. | 2014
- 575
-
Reduction of Density of 4H-SiC / SiO~2 Interface Traps by Pre-Oxidation Phosphorus ImplantationSledziewski, T. / Mikhaylov, A. / Reshanov, S. / Schoner, A. / Weber, H.B. / Krieger, M. et al. | 2014
- 579
-
Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiCSometani, M. / Okamoto, D. / Harada, S. / Ishimori, H. / Takasu, S. / Hatakeyama, T. / Takei, M. / Yonezawa, Y. / Fukuda, K. / Okumura, H. et al. | 2014
- 583
-
Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETsStrenger, C. / Uhnevionak, V. / Mortet, V. / Ortiz, G. / Erlbacher, T. / Burenkov, A. / Bauer, A.J. / Cristiano, F. / Bedel-Pereira, E. / Pichler, P. et al. | 2014
- 587
-
Experimental Studies on Water Vapor Plasma Oxidation and Thermal Oxidation of 4H-SiC (0001) for Clarification of the Atomic-Scale Flattening Mechanism in Plasma Assisted PolishingDeng, H. / Endo, K. / Yamamura, K. et al. | 2014
- 591
-
Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiCFlorentin, M. / Montserrat, J. / Brosselard, P. / Henry, A. / Godignon, P. et al. | 2014
- 595
-
Influence of Diverse Post-Trench Processes on the Electrical Performance of 4H-SiC MOS StructuresBanzhaf, C.T. / Grieb, M. / Trautmann, A. / Bauer, A.J. / Frey, L. et al. | 2014
- 599
-
Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS CapacitorsThomas, S.M. / Jennings, M.R. / Sharma, Y.K. / Fisher, C.A. / Mawby, P.A. et al. | 2014
- 603
-
Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient SpectroscopySveinbjomsson, E.O. / Gislason, O. et al. | 2014
- 607
-
4H-SiC MOS Capacitors and MOSFET Fabrication with Gate Oxidation at 1400^oCNaik, H. / Chow, T.P. et al. | 2014
- 611
-
Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4^o Off-Axis Si-Face 4H-SiC Epitaxial WafersBandoh, A. / Suzuki, K. / Miyasaka, Y. / Osawa, H. / Sato, T. et al. | 2014
- 615
-
Nitridation Effects of Gate Oxide on Channel Properties of SiC Trench MOSFETsAriyoshi, K. / Harada, S. / Senzaki, J. / Kojima, T. / Kojima, K. / Tanaka, Y. / Shinohe, T. et al. | 2014
- 619
-
NF~3 Added Oxidation of 4H-SiC(0001) and Suppression of Interface DegradationHasunuma, R. / Nagoshi, M. / Yamabe, K. et al. | 2014
- 623
-
Characterization of SiO~2/SiC Interfaces Annealed in N~2O or POCl~3Fiorenza, P. / Swanson, L.K. / Vivona, M. / Giannazzo, F. / Bongiorno, C. / Lorenti, S. / Frazzetto, A. / Roccaforte, F. et al. | 2014
- 627
-
Growth of Gate Oxides on 4H-SiC by NO at Low Partial PressuresHaasmann, D. / Dimitrijev, S. / Han, J.S. / Iacopi, A. et al. | 2014
- 631
-
Preparation and Characterization of Nitridation Layer on 4H SiC (0001) Surface by Direct Plasma NitridationAkahane, Y. / Kano, T. / Kimura, K. / Komatsu, H. / Watanabe, Y. / Yamakami, T. / Kamimura, K. et al. | 2014
- 635
-
Analysis of C-Face 4H-SiC MOS Capacitors with ZrO~2 Gate DielectricChan, L.S. / Chang, Y.H. / Lee, K.Y. et al. | 2014
- 639
-
Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic ContactsThierry-Jebali, N. / Lazar, M. / Vo-Ha, A. / Carole, D. / Souliere, V. / Henry, A. / Planson, D. / Ferro, G. / Konczewicz, L. / Contreras, S. et al. | 2014
- 645
-
n- and p-Type Doping of 4H-SiC by Wet-Chemical Laser ProcessingNishi, K. / Ikeda, A. / Marui, D. / Ikenoue, H. / Asano, T. et al. | 2014
- 649
-
Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon InterlayerHanafusa, H. / Ohta, A. / Ashihara, R. / Maruyama, K. / Mizuno, T. / Hayashi, S. / Murakami, H. / Higashi, S. et al. | 2014
- 653
-
Microwave Annealing of Al^+ Implanted 4H-SiC: Towards Device FabricationNath, A. / Parisini, A. / Tian, Y.L. / Rao, M.V. / Nipoti, R. et al. | 2014
- 657
-
Al^+ Implanted 4H-SiC p^+-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect ActivationGrossner, U. / Moscatelli, F. / Nipoti, R. et al. | 2014
- 661
-
Temperature Dependence of Electric Conductivities Femtosecond Laser Modified Areas in Silicon CarbideDeki, M. / Oka, T. / Takayoshi, S. / Naoi, Y. / Makino, T. / Ohshima, T. / Tomita, T. et al. | 2014
- 665
-
Comparative Study of the Current Transport Mechanisms in Ni~2Si Ohmic Contacts on n- and p-Type Implanted 4H-SiCVivona, M. / Greco, G. / Di Franco, S. / Giannazzo, F. / Roccaforte, F. / Frazzetto, A. / Rascuna, S. / Zanetti, E. / Guarnera, A. / Saggio, M. et al. | 2014
- 669
-
Ti/Al/Si Ohmic Contacts for both n-Type and p-Type 4H-SiCTamaso, H. / Yamada, S. / Kitabayashi, H. / Horii, T. et al. | 2014
- 673
-
Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite MaterialsTorimi, S. / Nogami, S. / Kaneko, T. et al. | 2014
- 677
-
Low Cost Ion Implantation Process with High Heat Resistant Photoresist in Silicon Carbide Device FabricationFujiwara, T. / Tanigaki, Y. / Furukawa, Y. / Tonari, K. / Otsuki, A. / Imai, T. / Oose, N. / Utsumi, M. / Ryo, M. / Gotoh, M. et al. | 2014
- 681
-
Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from -40^oC to 500^oCSmedfors, K. / Lanni, L. / Ostling, M. / Zetterling, C.M. et al. | 2014
- 685
-
Electrical Properties of Mg-Implanted 4H-SiCMatsuura, H. / Morine, T. / Nagamachi, S. et al. | 2014
- 689
-
Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n^+ 4H-SiCde Silva, M. / Sato, T. / Kuroki, S.I. / Kikkawa, T. et al. | 2014
- 693
-
On the Ti~3SiC~2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic ContactsJennings, M.R. / Fisher, C.A. / Walker, D. / Sanchez, A. / Perez-Tomas, A. / Hamilton, D.P. / Gammon, P.M. / Burrows, S.E. / Thomas, S.M. / Sharma, Y.K. et al. | 2014
- 697
-
Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDSWzorek, M. / Czerwinski, A. / Ratajczak, J. / Borysiewicz, M.A. / Kuchuk, A.V. / Piotrowska, A. / Katcki, J. et al. | 2014
- 702
-
Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect TransistorsNoll, S. / Rambach, M. / Grieb, M. / Scholten, D. / Bauer, A.J. / Frey, L. et al. | 2014
- 706
-
Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiCVivona, M. / Assaad, K.A. / Souliere, V. / Giannazzo, F. / Roccaforte, F. / Ferro, G. et al. | 2014
- 710
-
Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier DiodesMoghadam, H.A. / Dimitrijev, S. / Han, J.S. et al. | 2014
- 714
-
Junction Formation via Direct Bonding of Si and 6H-SiCSasada, Y. / Kurumi, T. / Shimizu, H. / Kinoshita, H. / Yoshimoto, M. et al. | 2014
- 718
-
I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient TemperaturesNishida, S. / Liang, J.B. / Morimoto, M. / Shigekawa, N. / Arai, M. et al. | 2014
- 722
-
4H-SiC Planarization Using Catalyst-Referred Etching with Pure WaterIsohashi, A. / Sano, Y. / Sadakuni, S. / Yamauchi, K. et al. | 2014
- 726
-
Investigation of the Barrier Heights for Dissociative Adsorption of HF on SiC Surfaces in the Catalyst-Referred Etching ProcessBui, P.V. / Inagaki, K. / Sano, Y. / Yamauchi, K. / Morikawa, Y. et al. | 2014
- 730
-
Hydrogen Effects in ECR-Etching of 3C-SiC(100) Mesa StructuresHiller, L. / Stauden, T. / Kemper, R.M. / Lindner, J.K.N. / As, D.J. / Pezoldt, J. et al. | 2014
- 734
-
Off-Orientation Influence on C-Face (0001) 4H-SiC Surface Morphology Produced by Etching Using Chlorine Trifluoride GasFukumoto, Y. / Habuka, H. / Kato, T. et al. | 2014
- 738
-
Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride GasYajima, D. / Habuka, H. / Kato, T. et al. | 2014
- 742
-
Investigation of Trenched and High Temperature Annealed 4H-SiCBanzhaf, C.T. / Grieb, M. / Trautmann, A. / Bauer, A.J. / Frey, L. et al. | 2014
- 746
-
Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC Wafers by Using Chemical Etching with Molten KCl+KOHYao, Y.Z. / Ishikawa, Y. / Sugawara, Y. / Sato, K. et al. | 2014
- 750
-
Thinning of a Two-Inch Silicon Carbide Wafer by Plasma Chemical Vaporization Machining Using a Slit ElectrodeOkada, Y. / Nishikawa, H. / Sano, Y. / Yamamura, K. / Yamauchi, K. et al. | 2014
- 754
-
A Novel Grinding Technique for 4H-SiC Single-Crystal Wafers Using Tribo-Catalytic AbrasivesKido, T. / Nagaya, M. / Kawata, K. / Kato, T. et al. | 2014
- 759
-
Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma ConfinementSano, Y. / Nishikawa, H. / Okada, Y. / Yamamura, K. / Matsuyama, S. / Yamauchi, K. et al. | 2014
- 763
-
Multi-Wire Electrical Discharge Sticing for Silicon Carbide Part 2: Improvement on Manufacturing Wafers by Forty-Wire EDSItokazu, A. / Miyake, H. / Hashimoto, T. / Fukushima, K. et al. | 2014
- 767
-
Effects of Machining Fluid on Electric Discharge Machining of SiC IngotYamamoto, N. / Yamaguchi, S. / Kato, T. et al. | 2014
- 771
-
High-Speed Slicing of SiC Ingot by High-Speed Multi Wire SawMaeda, H. / Takanabe, R. / Takeda, A. / Matsuda, S. / Kato, T. et al. | 2014
- 776
-
Development of Multi-Wire Electric Discharge Machining for SiC Wafer ProcessingOgawa, M. / Mine, K. / Fuchiyama, S. / Tawa, Y. / Kato, T. et al. | 2014
- 780
-
Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical EtchingSato, K. / Adachi, K. / Okamoto, H. / Yamaguchi, H. / Kimoto, T. / Suda, J. et al. | 2014
- 784
-
Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge MachiningMiyake, H. / Tomita, N. / Nakaki, Y. / Furusho, T. / Itokazu, A. / Hashimoto, T. / Toyoda, Y. / Yamakawa, S. / Sumitani, H. / Kuroiwa, T. et al. | 2014
- 791
-
Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBDEbihara, K. / Yamamoto, Y. / Nakaki, Y. / Aya, S. / Nakata, S. / Imaizumi, M. / Toyoda, Y. / Yamakawa, S. et al. | 2014
- 795
-
Study of 4H-SiC Schottky Diode Designs for 3.3kV ApplicationsBartolf, H. / Sundaramoorthy, V. / Mihaila, A. / Berthou, M. / Godignon, P. / Millan, J. et al. | 2014
- 800
-
Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS DiodeHuang, R.H. / Chen, G. / Bai, S. / Li, R. / Li, Y. / Tao, Y.H. et al. | 2014
- 804
-
Evaluation of Buried Grid JBS DiodesLim, J.K. / Peftitsis, D. / Sadik, D.P. / Bakowski, M. / Nee, H.P. et al. | 2014
- 808
-
High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching StepDeng, X.C. / Rao, C.Y. / Wei, J. / Jiang, H.P. / Chen, M.M. / Wang, X.D. / Zhang, B. et al. | 2014
- 812
-
The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)Yuan, H. / Tang, X.Y. / Zhang, Y.M. / Lv, H.L. / Wang, Y.H. / Zhou, Y.F. / Song, Q.W. et al. | 2014
- 816
-
Temperature and dI~D~S/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching ApplicationsJahdi, S. / Alatise, O. / Mawby, P.A. et al. | 2014
- 820
-
Properties of a SiC Schottky Barrier Diode Fabricated with a Thin SubstrateNakanishi, Y. / Tominaga, T. / Okabe, H. / Suehiro, Y. / Sugahara, K. / Kuroiwa, T. / Toyoda, Y. / Yamakawa, S. / Murasaki, H. / Kobayashi, K. et al. | 2014
- 824
-
4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension AnalysisRong, H. / Sharma, Y.K. / Li, F. / Jennings, M.R. / Mawby, P.A. et al. | 2014
- 828
-
Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device SimulationHasegawa, J. / Konishi, K. / Nakamura, Y. / Ohtsuka, K. / Nakata, S. / Nakamine, Y. / Nishimura, T. / Hatano, M. et al. | 2014
- 832
-
Ultrahigh-Voltage (> 20 kV) SiC PiN Diodes with a Space-Modulated JTE and Lifetime Enhancement Process via Thermal OxidationKaji, N. / Niwa, H. / Suda, J. / Kimoto, T. et al. | 2014
- 836
-
Fabrication and Design of 10 kV PiN Diodes Using On-Axis 4H-SiCSalemi, A. / Buono, B. / Hallen, A. / Hassan, J.U. / Bergman, P. / Zetterling, C.M. / Ostling, M. et al. | 2014
- 841
-
High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN DiodeNakayama, K. / Ogata, S. / Hayashi, T. / Hemmi, T. / Tanaka, A. / Izumi, T. / Asano, K. / Okamoto, D. / Tanaka, Y. / Mizushima, T. et al. | 2014
- 845
-
Development of SiC Super-Junction (SJ) Devices by Multi-Epitaxial GrowthKosugi, R. / Sakuma, Y. / Kojima, K. / Itoh, S. / Nagata, A. / Yatsuo, T. / Tanaka, Y. / Okumura, H. et al. | 2014
- 851
-
V~F Degradation of 4H-SiC PiN Diodes Using Low-BPD WafersOta, C. / Nishio, J. / Takao, K. / Shinohe, T. et al. | 2014
- 855
-
13-kV, 20-A 4H-SiC PiN Diodes for Power System ApplicationsOkamoto, D. / Tanaka, Y. / Mizushima, T. / Yoshikawa, M. / Fujisawa, H. / Takenaka, K. / Harada, S. / Ogata, S. / Hayashi, T. / Izumi, T. et al. | 2014
- 859
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Variant of Excess Current in 4H-SiC pn StructuresStrel chuk, A.M. / Kalimina, E.V. / Lebedev, A.A. / Boricheva, I.K. / Pavshukov, V.V. et al. | 2014
- 863
-
The Cryogenic Testing and Characterisation of SiC DiodesGammon, P.M. / Fisher, C.A. / Shah, V.A. / Jennings, M.R. / Perez-Tomas, A. / Burrows, S.E. / Myronov, M. / Leadley, D.R. / Mawby, P.A. et al. | 2014
- 867
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Comparison of 5kV SiC JBS and PiN DiodesBerthou, M. / Godignon, P. / Calvo, J. / Mihaila, A. / Bianda, E. / Nistor, I. et al. | 2014
- 871
-
650V SiC JFET for High Efficiency ApplicationsBergner, W. / Rupp, R. / Kirchner, U. / Kuck, D. et al. | 2014
- 875
-
Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power SupplyAkiyama, S. / Katoh, K. / Shimizu, H. / Hatanaka, A. / Ogawa, T. / Yokoyama, N. / Ishikawa, K. et al. | 2014
- 879
-
Evaluation of SiC Stack Cascode for 200^oC OperationsLi, X.Q. / Alexandrov, P. / Hostetler, J. / Bhalla, A. et al. | 2014
- 883
-
Beam Acceleration Experiment with SiC Based Power Supply and the Next Generation SiC-JFET PackageOkamura, K. / Osawa, Y. / Wake, M. / Yoshimoto, T. / Sasaki, R. / Takaki, K. / Takayama, K. et al. | 2014
- 887
-
The Role of Substrate Compensation on DC Characteristics of 4H-SiC MESFET with Buffer Layer: A Combined Two-Dimensional Simulations and Analytical StudyRao, M.H.L. / Murty, N.V.L.N. et al. | 2014
- 891
-
Monolithic Integration of Power MESFET for High Temperature SiC Integrated CircuitsBanu, V. / Montserrat, J. / Alexandru, M. / Jorda, X. / Millan, J. / Godignon, P. et al. | 2014
- 895
-
SiC Current Limiting FETs (CLFs) for DC ApplicationsTournier, D. / Godignon, P. / Niu, S.Q. / de Palma, J.F. et al. | 2014
- 899
-
3 kV Normally-Off 4H-SiC Buried Gate Static Induction Transistors (SiC-BGSITs)Takatsuka, A. / Tanaka, Y. / Yano, K. / Matsumoto, N. / Yatsuo, T. / Arai, K. et al. | 2014
- 903
-
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC OperationMatocha, K. / Chatty, K. / Banerjee, S. / Rowland, L.B. et al. | 2014
- 907
-
A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-ResistanceMasuda, T. / Wada, K. / Hiyoshi, T. / Saitoh, Y. / Tamaso, H. / Sakai, M. / Hiratsuka, K. / Mikamura, Y. / Nishiguchi, M. / Hatayama, T. et al. | 2014
- 911
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40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching ApplicationsOhoka, A. / Horikawa, N. / Kiyosawa, T. / Sorada, H. / Uchida, M. / Kanzawa, Y. / Sawada, K. / Ueda, T. / Fujii, E. et al. | 2014
- 915
-
Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge TerminationWada, K. / Uchida, K. / Kimura, R. / Sakai, M. / Hatsukawa, S. / Hiratsuka, K. / Hirakata, N. / Mikamura, Y. et al. | 2014
- 919
-
4H-SiC Trench MOSFET with Bottom Oxide ProtectionKagawa, Y. / Fujiwara, N. / Sugawara, K. / Tanaka, R. / Fukui, Y. / Yamamoto, Y. / Miura, N. / Imaizumi, M. / Nakata, S. / Yamakawa, S. et al. | 2014
- 923
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SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction DiodeNi, W. / Emori, K. / Marui, T. / Saito, Y. / Yamagami, S. / Hayashi, T. / Hoshi, M. et al. | 2014
- 927
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SiC Epi-Channel Lateral MOSFETsYen, C.T. / Bakowski, M. / Hung, C.C. / Reshanov, S. / Schoner, A. / Lee, C.Y. / Lee, L.S. / Wei, J.H. / Chiu, T.Y. / Huang, C.F. et al. | 2014
- 931
-
600 V -Class V-Groove SiC MOSFETsSaitoh, Y. / Furumai, M. / Hiyoshi, T. / Wada, K. / Masuda, T. / Hiratsuka, K. / Mikamura, Y. / Hatayama, T. et al. | 2014
- 935
-
14.6 m Omega cm^2 3.3 kV DIMOSFET on 4H-SiC (000-1)Kono, H. / Furukawa, M. / Ariyoshi, K. / Suzuki, T. / Tanaka, Y. / Shinohe, T. et al. | 2014
- 939
-
1200 V 4H-SiC DMOSFET with an Integrated Gate BufferRyu, S.H. / Jonas, C. / Capell, C. / Lemma, Y. / Agarwal, A. / McNutt, T. / Grider, D. / Allen, S.T. / Palmour, J.W. et al. | 2014
- 943
-
Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETsNanen, Y. / Suda, J. / Kimoto, T. et al. | 2014
- 947
-
Utilization of SiC MOSFET Body Diode in Hard Switching ApplicationsBolotnikov, A. / Glaser, J. / Nasadoski, J. / Losee, P. / Klopman, S. / Permuy, A. / Stevanovic, L. et al. | 2014
- 951
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Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body DiodeYamamoto, S. / Nakao, Y. / Tomita, N. / Nakata, S. / Yamakawa, S. et al. | 2014
- 955
-
High Temperature Reliability of the SiC-MOSFET with Copper MetallizationOkabe, H. / Yoshida, M. / Tominaga, T. / Fujita, J. / Endo, K. / Yokoyama, Y. / Nishikawa, K. / Toyoda, Y. / Yamakawa, S. et al. | 2014
- 959
-
Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETsPobegen, G. / Aichinger, T. / Salinaro, A. / Grasser, T. et al. | 2014
- 963
-
Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm^2 SiC-MOSFETHino, S. / Ito, M. / Miura, N. / Imaizumi, M. / Yamakawa, S. et al. | 2014
- 967
-
Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion ApplicationsGajewski, D.A. / Ryu, S.H. / Das, M. / Hull, B. / Young, J. / Palmour, J.W. et al. | 2014
- 971
-
Comparison of 600V Si, SiC and GaN Power DevicesChowdhury, S. / Stum, Z. / Li, Z.D. / Ueno, K. / Chow, T.P. et al. | 2014
- 975
-
Improvement of Channel Mobility in 4H-SiC C-Face MOSFETs by H~2 Rich Wet Re-OxidationOkamoto, M. / Makifuchi, Y. / Araoka, T. / Miyazato, M. / Sugahara, Y. / Tsutsumi, T. / Onishi, Y. / Kimura, H. / Harada, S. / Fukuda, K. et al. | 2014
- 979
-
Electrical Characteristics/Reliability Affected by Defects Analyzed by the Integrated Evaluation Platform for SiC Epitaxial FilmsKitabatake, M. / Sako, H. / Sasaki, M. / Yamashita, T. / Tamura, K. / Yamada, K. / Ishiyama, O. / Senzaki, J. / Matsuhata, H. et al. | 2014
- 985
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Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFETFuruhashi, M. / Tanioka, T. / Imaizumi, M. / Miura, N. / Yamakawa, S. et al. | 2014
- 989
-
Comparative Study of 4H-SiC DMOSFETs with N~2O Thermal Oxide and Deposit Oxide with Post Oxidation AnnealYen, C.T. / Hung, C.C. / Mikhaylov, A. / Lee, C.Y. / Lee, L.S. / Wei, J.H. / Chiu, T.Y. / Huang, C.F. / Reshanov, S. / Schoner, A. et al. | 2014
- 993
-
Characterization of SiO~2/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFETOhtsuka, K. / Hino, S. / Nagae, A. / Tanaka, R. / Kagawa, Y. / Miura, N. / Nakata, S. et al. | 2014
- 997
-
Selection of SPICE Parameters and Equations for Effective Simulation of Circuits with 4H-SiC Power MOSFETsTanner, P. / Dimitrijev, S. / Moghadam, H.A. / Aminbeidokhti, A. / Han, J.S. et al. | 2014
- 1001
-
Rapidly Maturing SiC Junction Transistors Featuring Current Gain ( beta ) > 130, Blocking Voltages up to 2700 V and Stable Long-Term OperationSundaresan, S.G. / Jeliazkov, S. / Grummel, B. / Singh, R. et al. | 2014
- 1005
-
SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTsLanni, L. / Malm, B.G. / Ostling, M. / Zetterling, C.M. et al. | 2014
- 1009
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Modeling of High Performance 4H-SiC Emitter Coupled Logic CircuitsSingh, S. / El Sayed, N. / Elgabra, H. / ElBoshra, T. / Wahbah, M. / Zaabi, M.A. et al. | 2014
- 1013
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Characterization of 4H-SiC Bipolar Junction Transistor at High TemperaturesZhang, N. / Rao, Y. / Xu, N. / Maralani, A. / Pisano, A.P. et al. | 2014
- 1017
-
Stability of Current Gain in SiC BJTsBuono, B. / Allerstam, F. / Domeij, M. / Konstantinov, A. / Gumaelius, K. / Das, H. / Neyer, T. et al. | 2014
- 1021
-
Optical Triggering of High Current (1300 A), High-Voltage (12 kV) 4H-SiC ThyristorRumyantsev, S. / Levinshtein, M. / Shur, M. / Cheng, L. / Agarwal, A.K. / Palmour, J.W. et al. | 2014
- 1025
-
Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit BreakerRezaei, M.A. / Wang, G.Y. / Huang, A.Q. / Cheng, L. / Palmour, J.W. / Scozzie, C. et al. | 2014
- 1030
-
20 kV 4H-SiC N-IGBTsRyu, S.H. / Capell, C. / Jonas, C. / O Loughlin, M.J. / Clayton, J. / van Brunt, E. / Lam, K. / Richmond, J. / Kadavelugu, A. / Bhattacharya, S. et al. | 2014
- 1034
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On the TCAD Based Design Diagnostic Study of 4H-SiC Based IGBTsNawaz, M. / Chimento, F. et al. | 2014
- 1038
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Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTsDeguchi, T. / Katakami, S. / Fujisawa, H. / Takenaka, K. / Ishimori, H. / Takasu, S. / Takei, M. / Arai, M. / Yonezawa, Y. / Fukuda, K. et al. | 2014
- 1042
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Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate MonitoringFujita, N. / Iwamoto, N. / Onoda, S. / Makino, T. / Ohshima, T. et al. | 2014
- 1046
-
Nuclear Radiation Detectors Based on 4H-SiC p^+-n JunctionIssa, F. / Vervisch, V. / Ottaviani, L. / Szalkai, D. / Vermeeren, L. / Lyoussi, A. / Kuznetsov, A. / Lazar, M. / Klix, A. / Palais, O. et al. | 2014
- 1050
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Optical and Electrical Simulations of Solar Cell Based on Silicon and Silicon CarbideBiondo, S. / Vervisch, W. / Ottaviani, L. et al. | 2014
- 1054
-
High Temperature Hydrogen Sensor Based on Silicon Carbide (SiC) MOS Capacitor StructureOfrim, B. / Brezeanu, G. / Draghici, F. / Rusu, I. et al. | 2014
- 1058
-
Discriminating High k Dielectric Gas SensorsRoy, S.K. / Vassilevski, K.V. / O Malley, C.J. / Wright, N.G. / Horsfall, A.B. et al. | 2014
- 1063
-
Two Packaging Solutions for High Temperature SiC Diode SensorsBrezeanu, G. / Draghici, F. / Badila, M. / Craciunoiu, F. / Pristavu, G. / Pascu, R. / Bernea, F. et al. | 2014
- 1067
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Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic CompoundsPuglisi, D. / Eriksson, J. / Bur, C. / Schutze, A. / Spetz, A.L. / Andersson, M. et al. | 2014
- 1071
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High Speed Rail Awaits the next Breakthrough of Power SemiconductorsUzuka, T. / Masada, E. et al. | 2014
- 1077
-
Progress in High Voltage SiC and GaN Power Switching DevicesChow, T.P. et al. | 2014
- 1083
-
High-Efficiency Power Conversion Using Silicon Carbide Power ElectronicsNee, H.P. / Rabkowski, J. / Peftitsis, D. / Tolstoy, G. / Colmenares, J. / Sadik, D. / Bakowski, M. / Lim, J.K. / Antonopoulos, A. / Angquist, L. et al. | 2014
- 1089
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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy SavingsCheng, L. / Palmour, J.W. / Agarwal, A.K. / Allen, S.T. / Brunt, E.V. / Wang, G.Y. / Pala, V. / Sung, W.J. / Huang, A.Q. / O Loughlin, M.J. et al. | 2014
- 1096
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SiC Power Module for Compact Power Conversion EquipmentYamashita, K. / Kato, K. / Ikeuchi, H. / Tanaka, J. / Toyota, K. / Nakamura, T. / Takahashi, K. / Arakawa, R. / Sasaoka, T. et al. | 2014
- 1100
-
Inverter-Rectifier Using SiC Power Devices for Bidirectional Wireless Power Transfer System of Electric VehiclesHachisuka, M. / Fukuhara, T. / Kaneko, Y. / Abe, S. et al. | 2014
- 1104
-
SiC Power Devices as Enabler for High Power Density - Aspects and ProspectsFriedrichs, P. et al. | 2014
- 1110
-
High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-ElectroplatingKato, N. / Shigenaga, A. / Tatsumi, K. et al. | 2014
- 1114
-
Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power DevicesZhang, Z. / Nakamura, T. / Hanada, T. et al. | 2014
- 1118
-
Pressure Dependence of Thermal Contact Resistance between Copper Heat Sink and Copper DBC Surfaces in SiC Power Device PackagesToth-Pal, Z. / Hammam, T. / Nee, H.P. et al. | 2014
- 1122
-
SiC Power Devices Operation from Cryogenic to High Temperature: Investigation of Various 1.2kV SiC Power DevicesChailloux, T. / Calvez, C. / Thierry-Jebali, N. / Planson, D. / Tournier, D. et al. | 2014
- 1126
-
Silicon Carbide Transistors for IC Design Applications up to 600 ^oCMaralani, A. / Lien, W.C. / Zhang, N. / Pisano, A.P. et al. | 2014
- 1130
-
High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic GatesAlexandru, M. / Banu, V. / Florentin, M. / Jorda, X. / Vellvehi, M. / Tournier, D. et al. | 2014
- 1137
-
Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet IlluminationEless, V. / Yakimova, R. / Pearce, R. et al. | 2014
- 1142
-
Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky ContactsGiannazzo, F. / Hertel, S. / Albert, A. / Magna, A.L. / Roccaforte, F. / Krieger, M. / Weber, H.B. et al. | 2014
- 1146
-
Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiCWinters, M. / Thorsteinsson, E.B. / Sveinbjornsson, E.O. / Gislason, H.P. / Hassan, J. / Janzen, E. / Rorsman, N. et al. | 2014
- 1150
-
Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)Kageshima, H. / Hibino, H. / Yamaguchi, H. / Nagase, M. et al. | 2014
- 1154
-
Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiCHopf, T. / Vassilevski, K. / Escobedo-Cousin, E. / Wright, N. / O Neill, A.G. / Horsfall, A. / Goss, J.P. / Barlow, A. / Wells, G. / Hunt, M. et al. | 2014
- 1158
-
Formation of Graphene onto Atomically Flat 6H-SiCRius, G. / Mestres, N. / Tanaka, Y. / Miyazaki, H. / Eryu, O. / Godignon, P. et al. | 2014
- 1162
-
Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation MechanismsEscobedo-Cousin, E. / Vassilevski, K. / Hopf, T. / Wright, N. / O Neill, A.G. / Horsfall, A. / Goss, J.P. et al. | 2014
- 1166
-
Backside Monitoring of Graphene on Silicon Carbide by Raman SpectroscopyFromm, F. / Hundhausen, M. / Kaiser, M. / Seyller, T. et al. | 2014
- 1170
-
Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator SubstratesOkano, M. / Edamoto, D. / Uchida, K. / Omura, I. / Ikari, T. / Nakao, M. / Naitoh, M. et al. | 2014
- 1174
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Commercialization of High 600V GaN-on-Silicon Power DevicesParikh, P. / Wu, Y.F. / Shen, L.K. et al. | 2014
- 1180
-
Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on SiliconRoensch, S. / Sizov, V. / Yagi, T. / Murad, S. / Groh, L. / Lutgen, S. / Sickmoeller, M. / Krieger, M. / Weber, H.B. et al. | 2014
- 1185
-
Evidence of Low Temperature Decomposition of GaN Hetero-Epitaxial Layers on C-Plane Sapphire Surface Characterized by Differential Scanning CalorimetryThierry-Jebali, N. / Chiriac, R. / Brylinski, C. et al. | 2014
- 1189
-
A Proposal to Apply Effective Acceptor Level for Representing Increased Ionization Ratio of Mg Acceptors in Extrinsically Photon-Recycled GaNMochizuki, K. / Mishima, T. / Ishida, Y. / Hatakeyama, Y. / Nomoto, K. / Kaneda, N. / Tsuchiya, T. / Terano, A. / Uchiyama, H. et al. | 2014
- 1193
-
Planarization of the Gallium Nitride Substrate Grown by the Na Flux Method Applying Catalyst-Referred EtchingYamaguchi, W. / Sadakuni, S. / Isohashi, A. / Asano, H. / Sano, Y. / Imade, M. / Maruyama, M. / Yoshimura, M. / Mori, Y. / Yamauchi, K. et al. | 2014
- 1197
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Evaluation of Degradation due to Electron Irradiation of Si~1~-~xC~x S/D n-type MOSFETsHori, M. / Asai, Y. / Yoneoka, M. / Tsunoda, I. / Takakura, K. / Nakashima, T. / Gonzalez, M.B. / Simoen, E. / Claeys, C. et al. | 2014
- 1201
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Structural Analysis of ZnO Thin Films Grown in Room Temperature on PET FilmYamamoto, H. / Idehara, K. / Kimura, R. / Nishigaki, H. / Hasuike, N. / Harima, H. / Isshiki, T. et al. | 2014