Wafer-scale GaN HEMT performance enhancement by diamond substrate integration (English)
- New search for: Via, G. D.
- New search for: Felbinger, J. G.
- New search for: Blevins, J.
- New search for: Chabak, K.
- New search for: Jessen, G.
- New search for: Gillespie, J.
- New search for: Fitch, R.
- New search for: Crespo, A.
- New search for: Sutherlin, K.
- New search for: Poling, B.
- New search for: Via, G. D.
- New search for: Felbinger, J. G.
- New search for: Blevins, J.
- New search for: Chabak, K.
- New search for: Jessen, G.
- New search for: Gillespie, J.
- New search for: Fitch, R.
- New search for: Crespo, A.
- New search for: Sutherlin, K.
- New search for: Poling, B.
- New search for: Eddy, Charles R.
In:
Nitride semiconductors; 10th international conference on nitride semiconductors (ICNS-10): Washington, DC, USA, 25-30 August 2013 /
3-4
;
871-874
;
2014
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ISSN:
- Conference paper / Print
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Title:Wafer-scale GaN HEMT performance enhancement by diamond substrate integration
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Contributors:Via, G. D. ( author ) / Felbinger, J. G. ( author ) / Blevins, J. ( author ) / Chabak, K. ( author ) / Jessen, G. ( author ) / Gillespie, J. ( author ) / Fitch, R. ( author ) / Crespo, A. ( author ) / Sutherlin, K. ( author ) / Poling, B. ( author )
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Conference:International conference; 10th, Nitride semiconductors; 10th international conference on nitride semiconductors (ICNS-10): Washington, DC, USA, 25-30 August 2013 / ; 2013 ; Washington, DC
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Published in:Nitride semiconductors; 10th international conference on nitride semiconductors (ICNS-10): Washington, DC, USA, 25-30 August 2013 / , 3-4 ; 871-874PHYSICA STATUS SOLIDI. C ; 11, 3-4 ; 871-874
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Publisher:
- New search for: Wiley-VCH
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Place of publication:Weinheim
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Publication date:2014-01-01
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Size:4 pages
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Remarks:ESTAR title.
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
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