VO~2 Films Prepared by Atomic Layer Deposition and RF Magnetron Sputtering (English)
- New search for: Tangirala, M.
- New search for: Zhang, K.
- New search for: Nminibapiel, D.
- New search for: Pallem, V.
- New search for: Dussarrat, C.
- New search for: Cao, W.
- New search for: Adam, T.N.
- New search for: Johnson, C.S.
- New search for: Elsayed-Ali, H.
- New search for: Baumgart, H.
- New search for: Electrochemical Society
- New search for: Tangirala, M.
- New search for: Zhang, K.
- New search for: Nminibapiel, D.
- New search for: Pallem, V.
- New search for: Dussarrat, C.
- New search for: Cao, W.
- New search for: Adam, T.N.
- New search for: Johnson, C.S.
- New search for: Elsayed-Ali, H.
- New search for: Baumgart, H.
- New search for: Roozeboom, F.
- New search for: Electrochemical Society
In:
Atomic layer deposition applications; Atomic layer deposition applications 9; editors: F. Roozeboom [and five others]
10
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49-58
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2013
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ISBN:
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ISSN:
- Conference paper / Print
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Title:VO~2 Films Prepared by Atomic Layer Deposition and RF Magnetron Sputtering
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Contributors:Tangirala, M. ( author ) / Zhang, K. ( author ) / Nminibapiel, D. ( author ) / Pallem, V. ( author ) / Dussarrat, C. ( author ) / Cao, W. ( author ) / Adam, T.N. ( author ) / Johnson, C.S. ( author ) / Elsayed-Ali, H. ( author ) / Baumgart, H. ( author )
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Conference:International Symposium; 9th, Atomic layer deposition applications; Atomic layer deposition applications 9; editors: F. Roozeboom [and five others] ; 2013 ; San Francisco, CA
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Published in:Atomic layer deposition applications; Atomic layer deposition applications 9; editors: F. Roozeboom [and five others] , 10 ; 49-58ECS TRANSACTIONS ; 58, 10 ; 49-58
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Publisher:
- New search for: Electrochemical Society
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Place of publication:Pennington, N.J.
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Publication date:2013-01-01
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Size:10 pages
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Remarks:Includes bibliographical references and index
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ISBN:
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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(Invited) Unit Steps of an ALD Half-CycleBlomberg, T. / Electrochemical Society et al. | 2013
- 3
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Unit Steps Of an ALD Half-CycleBlomberg, Tom et al. | 2013
- 19
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(Invited) In Situ Characterization of Plasma-Assisted Pt ALD on W ALD Adhesion Layers with Spectroscopic EllipsometryCavanagh, A.S. / Baker, L. / Clancey, J.W. / Yin, J. / Kongkanand, A. / Wagner, F.T. / George, S.M. / Electrochemical Society et al. | 2013
- 27
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(Invited) Vapor Phase Surface Functionalization Using Atomic Layer Deposition (ALD) and Self Assembled Molecules (SAMs)Sundaram, G.M. / Lecordier, L. / Bhatia, R. / Electrochemical Society et al. | 2013
- 27
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Vapor Phase Surface Functionalization using Atomic Layer Deposition (ALD) and Self Assembled Molecules (SAMs)Sundaram, G.M. / Lecondier, L. / Bhatia, R. et al. | 2013
- 41
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Diaphragm Durability Enhancement for Valves Supplying Gas for Atomic Layer DepositionYamaji, M. / Tanikawa, T. / Yakushijin, T. / Funakoshi, T. / Yamashita, S. / Hidaka, A. / Nagase, M. / Ikeda, N. / Sugawa, S. / Ohmi, T. et al. | 2013
- 49
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VO~2 Films Prepared by Atomic Layer Deposition and RF Magnetron SputteringTangirala, M. / Zhang, K. / Nminibapiel, D. / Pallem, V. / Dussarrat, C. / Cao, W. / Adam, T.N. / Johnson, C.S. / Elsayed-Ali, H. / Baumgart, H. et al. | 2013
- 59
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Microstructure Analysis of ALD Bi~2Te~3/Sb~2Te~3 Thermoelectric NanolaminatesNminibapiel, D. / Zhang, K. / Tangirala, M. / Baumgart, H. / Chakravadhanula, V.S. / Kubel, C. / Kochergin, V. / Electrochemical Society et al. | 2013
- 67
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Ultra Dielectrophoresis Using Atomic Layer Deposited Films: Electrothermal AnalysisEmaminejad, S. / Javanmard, M. / Dutton, R.W. / Davis, R.W. / Electrochemical Society et al. | 2013
- 75
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ALD-TiO~2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical ApplicationsScheuermann, A.G. / Lawrence, J.P. / Gunji, M. / Chidsey, C.E.D. / McIntyre, P.C. / Electrochemical Society et al. | 2013
- 87
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(Invited) Characteristics of SnS~x by Atomic Layer Deposition for CIGS Solar CellsHam, G. / Shin, S. / Park, J. / Jeon, H. / Electrochemical Society et al. | 2013
- 95
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(Invited) Atomic Layer Deposition of Multicomponent Metal Sulfides Applied to Thin Film PhotovoltaicsThimsen, E. / Electrochemical Society et al. | 2013
- 95
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Atomic Layer Deposition of Multicomponent Metal Sulfides Applied to Thin Film PhotovoltaicsThimsen, E. et al. | 2013
- 105
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(Invited) Spatial Atomic Layer Deposition of Transparent Conductive OxidesIlliberi, A. / Scherpenborg, R. / Poodt, P. / Roozeboom, F. / Electrochemical Society et al. | 2013
- 111
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Conformal Deposition For 3D Thin-Film BatteriesVereecken, P.M. / Huyghebaert, C. et al. | 2013
- 111
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(Invited) Conformal Deposition for 3D Thin-Film BatteriesVereecken, P.M. / Huyghebaert, C. / Electrochemical Society et al. | 2013
- 119
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High Surface Capacity Li-Ion All Solid State 3D Microbattery Based on Anatase TiO~2 Deposited by ALD on Silicon MicrostructuresEustache, E. / Tilmant, P. / Morgenroth, L. / Roussel, P. / Rolland, N. / Brousse, T. / Lethien, C. / Electrochemical Society et al. | 2013
- 131
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ALD Growth of PbTe and PbSe Superlattices for Thermoelectric ApplicationsZhang, K. / Pillai, A.D.R. / Nminibapiel, D. / Tangirala, M. / Chakravadhanula, V.S. / Kubel, C. / Baumgart, H. / Kochergin, V. / Electrochemical Society et al. | 2013
- 143
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(Invited) Advanced Dielectrics Targeting 2X DRAM MIM CapacitorsPopovici, M. / Swerts, J. / Aoulaiche, M. / Redolfi, A. / Kaczer, B. / Kim, M.S. / Douhard, B. / Delabie, A. / Clima, S. / Jurczak, M. et al. | 2013
- 143
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Advanced Dielectrics Targeting 2X DRAM MIM CapacitorsPopovici, M. / Swerts, J. / Aoulaiche, M. / Redolfi, A. / Kaczer, B. / Kim, M.S. / Douhard, B. / Delabie, A. / Clima, S. / Jurczak, M. et al. | 2013
- 153
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ALD of SrTiO~3 and Pt for Pt/SrTiO~3/Pt MIM Structures: Growth and Crystallization StudyLongo, V. / Roozeboom, F. / Kessels, W.M.M. / Verheijen, M. / Electrochemical Society et al. | 2013
- 163
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Atomic Layer Deposition of Thin Oxide Films for Resistive SwitchingFrohlich, K. / Jancovic, P. / Hudec, B. / Derer, J. / Paskaleva, A. / Bertaud, T. / Schroeder, T. / Electrochemical Society et al. | 2013
- 171
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(Invited) ALD and Pulsed-CVD of Ru, RuO~2, and SrRuO~3Han, J.H. / Hwang, C.S. / Electrochemical Society et al. | 2013
- 171
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ALD and pulsed CVD of Ru, RuO2, and SrRuO3Han, Jeong Hwan / Hwang, Cheol Seong et al. | 2013
- 183
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Catalytic Surface Reactions during Nucleation and Growth of Atomic Layer Deposition of Noble Metals: a Case Study for PlatinumMackus, A.J.M. / Bol, A.A. / Kessels, W.M.M. et al. | 2013
- 183
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(Invited) Catalytic Surface Reactions during Nucleation and Growth of Atomic Layer Deposition of Noble Metals: A Case Study for PlatinumMackus, A. / Bol, A. / Kessels, W.M.M. / Electrochemical Society et al. | 2013
- 195
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Conductivity Improvements of Atomic Layer Deposited Ta~3N~5Dekkers, H.F.W. / Lima, L.P.B. / Van Elshocht, S. / Electrochemical Society et al. | 2013
- 203
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Room Temperature Sensing of O~2 and CO by Atomic Layer Deposition Prepared ZnO Films Coated with Pt NanoparticlesErkens, I. / Blauw, M. / Verheijen, M. / Roozeboom, F. / Kessels, W.M.M. / Electrochemical Society et al. | 2013
- 215
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X-ray Characterization of PEALD versus PVD Tantalum Nitride Barrier Deposition and the Impact on Via Contact ResistanceZhang, X. / van der Straten, O. / Bolom, T. / He, M. / Maniscalco, J. / Edelstein, D. / Electrochemical Society et al. | 2013
- 223
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Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor ApplicationsFerrand, J. / Beugin, V. / Crisci, A. / Coindeau, S. / Jeannot, S. / Gros-Jean, M. / Blanquet, E. / Electrochemical Society et al. | 2013
- 235
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Physical, Electrical, and Reliability Characteristics of Multi-Step Deposition-Annealed HfO~2 FilmCheng, Y.L. / Hsieh, C.Y. / Bo, T.C. / Wu, C.S. / Lin, J.R. / Electrochemical Society et al. | 2013
- 249
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(Invited) Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer DepositionElam, J.W. / Mane, A.U. / Libera, J.A. / Hryn, J.N. / Siegmund, O.H. / McPhate, J. / Wetstein, M.J. / Elagin, A. / Minot, M.J. / O Mahony, A. et al. | 2013
- 249
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Synthesis, Characterization, and Application of Tunable Resistance Coatings Prepared by Atomic Layer DepositionElam, Jeffrey W. / Mane, Anil U. / Libera, Joseph A. / Hryn, John N. / Siegmund, Oswald H.W. / McPhate, Jason / Wetstein, Matthew J. / Elagin, Andrey / Minot, Michael J. / O'Mahony, Aileen et al. | 2013
- 263
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(Invited) Molecular Layer DepositionCameron, D.C. / Ivanova, T.V. / Electrochemical Society et al. | 2013
- 263
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Molecular Layer DepositionCameron, D.C. / Ivanova, T.V. et al. | 2013
- 277
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(Invited) Characterization of Atomic Layer Deposited Films as Diffusion Barriers for Silver Art ObjectsMarquardt, A. / Breitung, E.M. / Drayman-Weisser, T. / Gates, G. / Rubloff, G.W. / Phaneuf, R.J. / Electrochemical Society et al. | 2013
- 289
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Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin FilmsOzgit-Akgun, C. / Donmez, I. / Biyikli, N. et al. | 2013
- 289
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(Invited) Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin FilmsOzgit-Akgun, C. / Donmez, I. / Biyikli, N. / Electrochemical Society et al. | 2013
- 299
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A Comprehensive Study of Thermal Stability on Microstructure and Residual Stress for ALD HfZrO~2 Films at 28nm HKMG CMOS ApplicationsChiang, C.K. / Chang, J.C. / Chien, C.C. / Yang, C.L. / Wu, J.Y. / Electrochemical Society et al. | 2013
- 307
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Ultrathin SiO~2 Films Grown by Atomic Layer Deposition Using Tris(dimethylamino)silane (TDMAS) and OzoneHan, L. / Chen, Z.D. / Electrochemical Society et al. | 2013
- 317
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Application of Atomic Layer Deposition Tungsten (ALD W) as Gate Filling Metal for 22 nm and Beyond Nodes CMOS TechnologyWang, G. / Xu, Q. / Yang, T. / Luo, J. / Xiang, J. / Xu, J. / Xu, G. / Li, C. / Li, J. / Yan, J. et al. | 2013
- 325
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Self-Cleaning and Electrical Characteristics of ZrO~2 (HfO~2)/GaAs MOS Capacitor Fabricated by Atomic Layer DepositionWhite, C. / Donovan, T. / Cashwell, I. / Konda, R.B. / Sahu, D.R. / Xiao, B. / Bahoura, M. / Pradhan, A.K. / Electrochemical Society et al. | 2013