Universal Parameter Evaluating SiO~2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy (English)
- New search for: Chinone, N.
- New search for: Nayak, A.
- New search for: Kosugi, R.
- New search for: Tanaka, Y.
- New search for: Harada, S.
- New search for: Kiuchi, Y.
- New search for: Okumura, H.
- New search for: Cho, Y.
- New search for: Chinone, N.
- New search for: Nayak, A.
- New search for: Kosugi, R.
- New search for: Tanaka, Y.
- New search for: Harada, S.
- New search for: Kiuchi, Y.
- New search for: Okumura, H.
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In:
Silicon carbide and related materials
;
159-162
;
2017
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ISSN:
- Conference paper / Print
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Title:Universal Parameter Evaluating SiO~2/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
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Contributors:Chinone, N. ( author ) / Nayak, A. ( author ) / Kosugi, R. ( author ) / Tanaka, Y. ( author ) / Harada, S. ( author ) / Kiuchi, Y. ( author ) / Okumura, H. ( author ) / Cho, Y. ( author )
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Conference:Silicon carbide and related materials ; 2016 ; Halkidiki, Greece
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Published in:Silicon carbide and related materials ; 159-162Materials science forum ; 897 ; 159-162
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Publisher:
- New search for: Trans Tech Publications
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Publication date:2017-01-01
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Size:4 pages
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ISSN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Source:
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