Si K-edge X-ray absorption fine structure studies of porous silicon (Unknown)
- New search for: Sham, T. K.
- New search for: Feng, X. H.
- New search for: Jiang, D. T.
- New search for: Yang, B. X.
- New search for: Sham, T. K.
- New search for: Feng, X. H.
- New search for: Jiang, D. T.
- New search for: Yang, B. X.
In:
CANADIAN JOURNAL OF PHYSICS
;
70
, 10/11
;
813
;
1992
-
ISSN:
- Article (Journal) / Print
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Title:Si K-edge X-ray absorption fine structure studies of porous silicon
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Contributors:
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Published in:CANADIAN JOURNAL OF PHYSICS ; 70, 10/11 ; 813
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Publisher:
- New search for: NATIONAL RESEARCH COUNCIL CANADA
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Publication date:1992-01-01
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Size:813 pages
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ISSN:
-
Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
- New search for: 530.5 / 530.05
- Further information on Dewey Decimal Classification
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Classification:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 70, Issue 10/11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 783
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Growth efficiency and distribution coefficient of GaInP-InP epilayers and heterostructuresBensaada, A. / Cochrane, R. W. / Masut, R. A. et al. | 1992
- 789
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The effect of implant temperature and beam flux on damage accumulation and Si activation of Si-implanted InPAkano, U. G. / Mitchell, I. V. / Shepherd, F. R. / Miner, C. J. et al. | 1992
- 795
-
Reduced interface state densities for remote microwave plasma silicon nitrideLandheer, D. / Bardwell, J. A. / Sproule, I. / Scott-Thomas, J. et al. | 1992
- 799
-
X-ray photoelectron spectroscopy studies of Ge epilayers on Si(100)Lu, Z. H. / Baribeau, J.-M. / Jackman, T. E. et al. | 1992
- 803
-
Dislocation detection using polarization-resolved photoluminescenceColbourne, P. D. / Cassidy, D. T. et al. | 1992
- 813
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Si K-edge X-ray absorption fine structure studies of porous siliconSham, T. K. / Feng, X. H. / Jiang, D. T. / Yang, B. X. et al. | 1992
- 819
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Electric and magnetic field induced dimensionality reduction in InGaAs-GaAs superlatticesRoth, A. / Lugagne-Delpon, E. / Voisin, P. et al. | 1992
- 824
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Interfaces effectives et pentes d'Urbach de multicouches a-Si:H/a-SiN~x:HBeaudoin, M. / Meunier, M. / Muschik, T. / Schwarz, R. et al. | 1992
- 830
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Variation de la contrainte des verres de silice sous cycle thermiqueBouchard, H. / Azelmad, A. / Currie, J. F. / Meunier, M. et al. | 1992
- 834
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Mechanical properties of silicon carbide films for X-ray lithography applicationJean, A. / El Khakani, M. A. / Chaker, M. / Gat, E. et al. | 1992
- 838
-
Epitaxial tilt of partially relaxed InGaAs layers grown on (100) GaAs substratesMaigne, P. / Roth, A. P. / Desruisseaux, C. / Coulas, D. et al. | 1992
- 843
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Fine structure in Raman spectroscopy and X-ray reflectometry and its uses for characterization of superlatticesZhang, P. X. / Lockwood, D. J. / Baribeau, J.-M. et al. | 1992
- 852
-
Investigation of interdiffusion in (Si~mGe~n)~p superlattices and Ge~n buried layers by Raman and X-ray techniquesLockwood, D. J. / Baribeau, J.-M. / Labbe, H. J. et al. | 1992
- 860
-
Phase formation in Fe-Si thin-film diffusion couplesIvey, D. G. / Wang, D. et al. | 1992
- 866
-
Transmission electron microscopy characterization of In~1~-~xGa~xSb on (001) GaAs heteroepitaxial systemRobertson, M. D. / Corbett, J. M. / Webb, J. B. / Rousina, R. et al. | 1992
- 875
-
Improving transmission electron microscopy characterization of semiconductors by minimizing sample preparation artifactsMcCaffrey, J. P. / Sproule, G. I. / Sargent, R. et al. | 1992
- 881
-
Process optimization for a micromachined silicon nonreverse valveStoev, I. / Syrzycki, M. / Parameswaran, M. / Chapman, G. et al. | 1992
- 886
-
Strain-induced compositional shift in the growth of InAs~yP~1~-~y onto (100) InP by gas-source molecular beam epitaxyQiu, C. / Kruzelecky, R. V. / Thompson, D. A. / Comedi, D. et al. | 1992
- 893
-
Epitaxial growth of gallium arsenide prepared by low-pressure metal-organic chemical vapour deposition at low temperaturesAktik, C. / Beerens, J. / Blain, S. / Bsiesy, A. et al. | 1992
- 898
-
Depot par laser de WSi~x sur du TiN a partir de WF~6 et de SiH~4Desjardins, P. / Izquierdo, R. / Meunier, M. et al. | 1992
- 904
-
Numerical study of heat transport in thermally isolated flow-rate microsensorsSwart, N. / Nathan, A. et al. | 1992
- 908
-
Wavelength and threshold current variation in inhomogeneously pumped InGaAs/AlGaAs single and double quantum well ridge wave-guide lasersMcGreer, K. A. / Moss, D. / Williams, R. L. / Dion, M. et al. | 1992
- 914
-
Long-wavelength ridge-wave-guide lasers with processed facets and integrated back-facet monitorsCook, J. P. D. / Dzioba, S. / Fox, K. / Maritan, C. et al. | 1992
- 921
-
InGaAs/GaAs single quantum well lasers with monolithically integrated multilayer wave guides for surface-emitted sum-frequency generationDai, H. / Janz, S. / Normandin, R. / Chatenoud, F. et al. | 1992
- 928
-
Echelle grating - curved wave-guide demultiplexer for photonic integrated circuitsFallahi, M. / McGreer, K. A. / Delage, A. / Normandin, R. et al. | 1992
- 931
-
A four-channel ridge wave-guide quantum well wavelength division demultiplexing detector and its optimizationYe, F. / Moss, D. / Simmons, J. G. / Jessop, P. E. et al. | 1992
- 937
-
A versatile two-dimensional model for InGaAsP quantum-well semiconductor lasersLi, Z.-M. / Davies, M. / Dion, M. / McAlister, S. P. et al. | 1992
- 943
-
Gallium arsenide electronics in the marketplaceJay, P. R. et al. | 1992
- 946
-
Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilaneHewitt, S. B. / Tay, S.-P. / Tarr, N. G. / Boothroyd, A. R. et al. | 1992
- 949
-
Determination of the trap energy levels and the emitter area dependence of noise in polyemitter bipolar junction transistors from generation-recombination noise spectraNg, A. / Deen, M. J. / Ilowski, J. et al. | 1992
- 959
-
Effective mobility in p-channel Si-SiGe metal oxide semiconductor field effect transistors (MOSFETs)Manku, T. / Nathan, A. et al. | 1992
- 963
-
On transconductance in the p-channel Si/SiGe heterojunction field effect transistorKovacic, S. J. / Ojha, J. J. / Swoger, J. H. / Simmons, J. G. et al. | 1992
- 969
-
Characteristics of mesa- and LOCOS-isolated molecular beam epitaxy SiGe diodesTang, Z. R. / Salama, C. A. T. / Noel, J.-P. / Houghton, D. C. et al. | 1992
- 975
-
Optimal channel grading in p-type Si/SiGe metal oxide semiconductor field effect transistors (MOSFETs)Voinigescu, S. / Salama, C. A. T. et al. | 1992
- 979
-
Quantum interference effects as a tool to probe the sidewalls of sub-micrometre-size n^+GaAs channelsTaylor, R. P. / Main, P. C. / Eaves, L. / Thoms, S. et al. | 1992
- 985
-
Ultrafast electron tunnelling in a reverse-biased, high-efficiency quantum well laser structureHalliday, D. P. / Moss, D. / Charbonneau, S. / Aers, G. C. et al. | 1992
- 993
-
Hysteresis in resonant tunneling diode based multiple-peak drive device for multivalued SRAM cells: analysis, simulation, and experimental resultsRaychaudhuri, A. / Yan, Z. X. / Deen, M. J. / Seabaugh, A. C. et al. | 1992
- 1001
-
Nonlinear behaviour in the magneto-transport through continuous gate and split gate nanostructuresTaylor, R. P. / Fortin, S. / Sachrajda, A. S. / Adams, J. A. et al. | 1992
- 1005
-
Excess currents as a result of trap-assisted tunneling in double barrier resonant tunneling diodesMa, C. L. F. / Deen, M. J. / Hardy, R. H. S. et al. | 1992
- 1013
-
Experimental investigation of the influence of the barrier thickness in double-quantum-well resonant interband tunnel diodesYang, R. Q. / Lu, J. / Xu, J. M. / Day, D. J. et al. | 1992
- 1017
-
Carrier lifetimes in strained InGaAsP multiple quantum-well laser structuresTakasaki, B. W. / Preston, J. S. / Evans, J. D. / Simmons, J. G. et al. | 1992
- 1023
-
Focused-ion-beam implantation in strained InGaAs-GaAs quantum wellsAllard, L. B. / Aers, G. C. / Charbonneau, S. / Jackman, T. E. et al. | 1992
- 1027
-
Excited quantum states in CdTe-Cd~1~-~xMn~xTe multiple quantum wells and superlattices grown by pulsed laser evaporation and epitaxyLabrie, D. / Wang, X. / Dubowski, J. J. et al. | 1992
- 1035
-
Fabrication of novel self-aligned metal insulator semiconductor field effect transistors (MISFETs) on InP by a S interface engineering techniqueSundararaman, C. S. / Currie, J. F. et al. | 1992
- 1039
-
Electronic properties of (NH~4)~2S passivated InP(100) surfacesTao, Y. / Yelon, A. / Leonelli, R. et al. | 1992
- 1043
-
Study of thermal desorption of UV/ozone oxide on InPComedi, D. / Balcaitis, G. / Robinson, B. J. / Thompson, D. A. et al. | 1992
- 1050
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Electronic passivation of GaP surfaces using (NH~4)~2S treatmentJedral, L. / Ruda, H. E. / Sodhi, R. / Ma, H. et al. | 1992
- 1057
-
Microwave-assisted high-speed modulation of semiconductor lasersWu, C. Y. / Guo, C. Z. / Xu, J. M. et al. | 1992
- 1064
-
Sidegating in GaAs metal semiconductor field effect transistors (MESFETs): role of stationary Gunn domainsMcKinnon, W. R. / McAlister, S. P. et al. | 1992
- 1070
-
Excess noise, gain, and dark current in Ge avalanche photodiodesScansen, D. / Kasap, S. O. et al. | 1992
- 1076
-
Electrical characterization of rf sputtered TiN thin films on III-V semiconductorsPang, Z. / Boumerzoug, M. / Kruzelecky, R. V. / Mascher, P. et al. | 1992
- 1082
-
AlGaAs/InGaAs/GaAs optoelectronic structures on (111)B GaAsChatenoud, F. / Janz, S. / Normandin, R. / Dai, H. et al. | 1992
- 1086
-
Transient analysis of signal charge transfer in long diffused regions of spectroscopic image sensorsDobson, D. A. B. / Chamberlain, S. G. et al. | 1992
- 1092
-
Modelling of circular wave guidesDelage, A. / McGreer, K. A. / Rainville, E. et al. | 1992
- 1099
-
The electronic structure of molecular beam epitaxy grown InAs (110)Swanston, D. M. / McLean, A. B. / McIlroy, D. N. / Heskett, D. et al. | 1992
- 1104
-
Optical and electrical properties of electron cyclotron resonance chemical vapour-deposited SiN~x:H filmsBoudreau, M. / Boumerzoug, M. / Kruzelecky, R. V. / Mascher, P. et al. | 1992
- 1109
-
Rapid thermal annealing of in situ phosphorus-doped polysilicon emittersMackay, G. F. / Manning, B. M. / Tarr, N. G. et al. | 1992
- 1112
-
Low-frequency noise correlations in lateral pnp bipolar transistorsNathan, A. / Charbon, E. / Kung, W. / Salim, A. et al. | 1992
- 1118
-
Electrophotographic and charge transport measurements on amorphous semiconductor films of (Se~1~-~xTe~x)~1~-~yP~yKasap, S. O. / Polischuk, B. / Aiyah, V. / Bekirov, A. et al. | 1992
- 1124
-
Growth of thin CeO~2-YBa~2Cu~3O~7 superlatticesDenhoff, M. W. / Grant, P. D. / McCaffrey, J. P. et al. | 1992
- 1133
-
Photoresponse of high T~c superconductor thin filmsHegmann, F. A. / Preston, J. S. et al. | 1992
- 1138
-
Optical bistability in the GaAs/AlGaAs bistable field effect transistorOjha, J. J. / Vetter, A. S. / Simmons, J. G. / Jessop, P. E. et al. | 1992
- 1143
-
Uniphase operation of a GaAs resistive gate charge-coupled deviceLeNoble, M. / Cresswell, J. V. et al. | 1992
- 1148
-
Discrete electron effects in lateral quantum islandsSachrajda, A. S. / Taylor, R. P. / Dharma-Wardana, C. / Adams, J. A. et al. | 1992
- 1153
-
Leaky quantum wells: A basic theory and applicationsYang, R. Q. / Xu, J. M. et al. | 1992
- 1159
-
Ferroelectrics for semiconductor devicesSayer, M. / Wu, Z. / Vasant Kumar, C. V. R. / Amm, D. T. et al. | 1992
- 1171
-
Electrical characteristics and photolytic tuning of poly-(3-hexylthiophene) thin film metal-insulator-semiconductor field-effect transistors (MISFETs)Xie, Z. / Abdou, M. S. A. / Lu, X. / Deen, M. J. et al. | 1992
- 1178
-
Silicon micromachining technology for sub-nanogram discrete mass resonant biosensorsPrescesky, S. / Parameswaran, M. / Rawicz, A. / Turner, R. F. B. et al. | 1992
- 1184
-
Optical properties of porous siliconLockwood, D. J. / Aers, G. C. / Allard, L. B. / Bryskiewicz, B. et al. | 1992
- 1194
-
Spectroscopic ellipsometry and photoluminescence from Si~1~-~xGe~x alloys grown by atmospheric-pressure chemical vapor depositionHulse, J. E. / Rowell, N. L. / Wang, A. / Namavar, F. et al. | 1992
- 1199
-
A versatile, low light level optical detection system: from time-integrated emission spectra to time-resolved, two-dimensional emission mappingAllard, L. B. / Charbonneau, S. / Young, J. F. et al. | 1992