Y-gate submicron gate length GaAs metal-semiconductor field effect transistors (Unknown)
- New search for: Ren, F.
- New search for: Pearton, S. J.
- New search for: Lothian, J. R.
- New search for: Abernathy, C. R.
- New search for: Ren, F.
- New search for: Pearton, S. J.
- New search for: Lothian, J. R.
- New search for: Abernathy, C. R.
In:
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS PROCESSING AND PHENOMENA
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11
, 5
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1850
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1993
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ISSN:
- Article (Journal) / Print
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Title:Y-gate submicron gate length GaAs metal-semiconductor field effect transistors
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Contributors:Ren, F. ( author ) / Pearton, S. J. ( author ) / Lothian, J. R. ( author ) / Abernathy, C. R. ( author )
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Published in:
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Publisher:
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Publication date:1993-01-01
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Size:1850 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
- New search for: 621.22
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.22 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 11, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1759
-
Effect of friction on atomic force microscopy of ion implanted highly oriented pyrolytic graphiteAnnis, B. K. / Pedraza, D. F. et al. | 1993
- 1766
-
Scanning tunneling microscopic and transmission electron microscopic studies of cytochrome c~5~5~1 denaturation at the air-water interfaceLiu, Z.-F. / Manivannan, A. / Inokuchi, H. / Yanagi, H. et al. | 1993
- 1774
-
Electrostatic force microscope imaging analyzed by the surface charge methodWatanabe, S. / Hane, K. / Ohye, T. / Ito, M. et al. | 1993
- 1782
-
Micromorphology study of mercuric iodide crystals by atomic force microscopyAzoulay, M. / George, M. A. / Jayatirtha, H. N. / Biao, Y. et al. | 1993
- 1788
-
Scanning tunneling microscopy of porous silicon surfacesAmisola, G. B. / Behrensmeier, R. / Galligan, J. M. / Otter, F. A. et al. | 1993
- 1793
-
Antimony doping by low energy implantation in molecular-beam epitaxy Si layersGergam, E. / Charki, H. / Lazzouni, M. / Vapaille, A. et al. | 1993
- 1793
-
Antimony delta doping by low energy implantation in molecular-beam epitaxy Si layersGergam, E. / Charki, H. / Lazzouni, M. / Vapaille, A. / Prudon, G. et al. | 1993
- 1798
-
Metallization of W/Co-Tl/Si and simultaneous formation of diffusion barrier and shallow CoSi~2 contact in normal flowing-nitrogen furnaceYang, F.-M. / Peng, J.-G. / Huang, T.-S. / Huang, S.-L. et al. | 1993
- 1798
-
Metallization of W/Co-Ti/Si and simultaneous formation of diffusion barrier and shallow CoSi2 contact in normal flowing-nitrogen furnaceYang, Fann-Mei / Peng, Jaw-Gi / Huang, Tsung-Shiew / Huang, Sheng-Liang / Chen, Mao-Chieh et al. | 1993
- 1807
-
Structure and defect characterization of epitaxial CoSi~2 on Si(001) formed using an amorphous Co~7~5W~2~5 sputtered layerLa Via, F. / Spinella, C. / Reader, A. H. / Duchateau, J. P. W. B. et al. | 1993
- 1815
-
Characterization of chemically vapor deposited tungsten on low-pressure chemically deposited and reactively sputtered titanium nitride filmsKumar, S. / Chopra, D. R. / Smith, G. C. et al. | 1993
- 1819
-
Study of gate oxide breakdown caused by charge buildup during dry etchingNojiri, K. / Tsunokuni, K. et al. | 1993
- 1825
-
alpha alpha ' alpha '' alpha ''' poly-tetrafluoro-p-xylylene as an interlayer dielectric for thin film multichip modules and integrated circuitsDabral, S. / Zhang, X. / Wu, X.M. / Yang, G.R. / You, L. / Lang, C.I. / Hwang, K. / Cuan, G. / Chiang, C. / Bakhru, H. et al. | 1993
- 1825
-
' '' ''' Poly-tetrafluoro-p-xylylene as an interlayer dielectric for thin film multichip modules and integrated circuitsDabral, S. / Zhang, X. / Wu, X. M. / Yang, G.-R. et al. | 1993
- 1833
-
1/f noise in HgCdTe metal-insulator-semiconductor infrared detectorsHe, W. / Celik-Butler, Z. et al. | 1993
- 1840
-
Intersubband transitions in pseudomorphic InGaAs/GaAs/AlGaAs multiple step quantum wellsLi, H. S. / Chen, Y. W. / Wang, K. L. / Lie, D. Y. C. et al. | 1993
- 1844
-
Vacuum integrated fabrication of vertical-cavity surface emitting lasersChoquette, K. D. / Hong, M. / Freund, R. S. / Chu, S. N. G. et al. | 1993
- 1850
-
Y-gate submicron gate length GaAs metal-semiconductor field effect transistorsRen, F. / Pearton, S. J. / Lothian, J. R. / Abernathy, C. R. et al. | 1993
- 1854
-
Through-wafer via fabrication in gallium arsenide by excimer laser projection patterned etchingFoulon, F. / Green, M. et al. | 1993
- 1859
-
Influence of the frequency of a periodic biasing voltage upon the etching of polymersBounasri, F. / Moisan, M. / Sauve, G. / Pelletier, J. et al. | 1993
- 1868
-
Broad area, intense electron beam source for high resolution, high throughput semiconductor lithographyHsu, T.-Y. / Hadizad, P. / Liou, R.-L. / Baik, M. et al. | 1993
- 1873
-
Trilevel reactive ion etching processes for fabrication of 60 nm germanium structures with high aspect ratioMatthies, T. / David, C. / Thieme, J. et al. | 1993
- 1879
-
Reactive ion etching of via holes for GaAs high electron mobility transistors and monolithic microwave integrated circuits using Cl~2/BCl~3/Ar gas mixturesNordheden, K. J. / Ferguson, D. W. / Smith, P. M. et al. | 1993
- 1884
-
Ion transport anisotropy in low pressure, high density plasmasGottscho, R. A. et al. | 1993
- 1890
-
Synchrotron radiation-assisted etching of Si in the presence of reactive species produced by microwave dischargeTerakado, S. / Kitamura, O. / Suzuki, S. / Tanaka, K. et al. | 1993
- 1895
-
Radio-frequency Ar sputter etch rates: Theory and experimentHorwitz, C. M. / Puzzer, T. / Melngailis, J. et al. | 1993
- 1903
-
Doping of polycrystalline silicon films using an arsenic spin-on-glass source and surface smoothnessBashir, R. / Venkatesan, S. / Yen, H. / Neudeck, G. W. et al. | 1993
- 1906
-
Erratum: "Proximity effect correction data processing system for electron beam lithography" [J. Vac. Sci. Technol. B 10, 133 (1992)]Lu, W. / Tao, J. X. / Gu, N. et al. | 1993
- 1909
-
Properties of thin copper films, condensed from a copper plasma with ion energies between 2 and 150 eVMausbach, M. / Ehrich, H. / Mueller, K. G. et al. | 1993
- 1916
-
Study of zinc thin films formed using large clusters in the ionized cluster beam deposition techniqueUrban, F. K. / Feng, S. W. / Nainaparampil, J. J. et al. | 1993
- 1921
-
Role of energetic atoms and ions in Ta films grown by different physical vapor deposition methodsRoy, R. A. / Catania, P. / Saenger, K. L. / Cuomo, J. J. et al. | 1993
- 1928
-
Generation and applications of compressive stress induced by low energy ion beam bombardmentMcKenzie, D. R. et al. | 1993
- 1936
-
Noncrystalline films with the chemistry, bonding, and properties of diamondCollins, C. B. / Davanloo, F. / Lee, T. J. / Park, H. et al. | 1993
- 1942
-
Structural analysis of epitaxial GaAs on on-axis (100) Si grown by ionized source beam epitaxyYoo, M. C. / Yun, S. J. / Kim, K. / Rigsbee, J. M. et al. | 1993