Eddy-current interaction with an ideal crack. II. The inverse problem (Unknown)
- New search for: Bowler, J. R.
- New search for: Norton, S. J.
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In:
JOURNAL OF APPLIED PHYSICS
;
75
, 12
;
8138
;
1994
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ISSN:
- Article (Journal) / Print
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Title:Eddy-current interaction with an ideal crack. II. The inverse problem
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Contributors:
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Published in:JOURNAL OF APPLIED PHYSICS ; 75, 12 ; 8138
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Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
-
Publication date:1994-01-01
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Size:8138 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
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Table of contents – Volume 75, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 7607
-
Excitonic polaritons in quantum‐confined systems and applications to optoelectronic devicesKatsuyama, Toshio / Ogawa, Kensuke et al. | 1994
- 7626
-
Role of dynamical cooperativity for an enhanced isotope effect during transportRendell, R. W. et al. | 1994
- 7633
-
High‐power proton beam‐matter interaction diagnostics by analysis of the hydrodynamic response of solid targetsBaumung, K. / Karow, H. U. / Rusch, D. / Bluhm, H. J. / Hoppe´, P. / Kanel, G. I. / Utkin, A. V. / Licht, V. et al. | 1994
- 7639
-
Double‐grating thin‐film devices based on second‐order Bragg interactionKasraian, Masoud et al. | 1994
- 7653
-
Modeling of mixing in chemical oxygen‐iodine lasers: Analytic and numerical solutions and comparison with experimentsBarmashenko, B. D. / Elior, A. / Lebiush, E. / Rosenwaks, S. et al. | 1994
- 7666
-
Optical properties of disordered GaAs/(Al,Ga)As distributed Bragg reflectorsFloyd, P. D. / Merz, J. L. et al. | 1994
- 7669
-
Thermionic‐tunneling‐diffusion model of the laser current‐voltage and power characteristicsGrinberg, A. A. et al. | 1994
- 7681
-
Vibrations of AT‐cut quartz strips of narrow width and finite lengthLee, P. C. Y. / Wang, Ji et al. | 1994
- 7696
-
Thermal waves in materials with linearly inhomogeneous thermal conductivityFivez, Jan / Thoen, Jan et al. | 1994
- 7700
-
Circular streamline model of shaped‐charge jet and slug formation with asymmetryCurtis, J. P. / Kelly, R. J. et al. | 1994
- 7710
-
Enhanced saturation of sputtered amorphous SiN film frameworks using He‐ and Ne‐Penning effectsSugimoto, Iwao / Nakano, Satoko / Kuwano, Hiroki et al. | 1994
- 7718
-
A combined plasma‐surface model for the deposition of C:H films from a methane plasmavon Keudell, A. / Mo¨ller, W. et al. | 1994
- 7728
-
Morphologies and photoluminescence of porous silicon under different etching and oxidation conditionsLin, Chi‐Huei / Lee, Si‐Chen / Chen, Yang‐Fang et al. | 1994
- 7737
-
Interaction of α‐radiation induced defects with Pd‐related deep levels in siliconGill, Asghar A. / Zafar, N. / Zafar Iqbal, M. / Baber, N. et al. | 1994
- 7737
-
Interaction of a-radiation induced defects with Pd-related deep levels in siliconGill, Asghar A. et al. | 1994
- 7737
-
Interaction of alpha-radiation induced defects with Pd-related deep levels in siliconGill, A.A. / Zafar, N. / Zafar Iqbal, M. / Baber, N. et al. | 1994
- 7745
-
Magnetism of ternary compounds RE6Fe13X; RE=Pr, Nd; X=Cu, Ag, Au, Zn, Cd, and HgWeitzer, F. / Leithe‐Jasper, A. / Rogl, P. / Hiebl, K. / Rainbacher, A. / Wiesinger, G. / Steiner, W. / Friedl, J. / Wagner, F. E. et al. | 1994
- 7752
-
Nitrogen effect in mechanical alloying of immiscible Cu‐V: Extended x‐ray absorption fine structure studySakurai, Kenji / Lee, Chung Hyo / Kuroda, Nariko / Fukunaga, Toshiharu / Mizutani, Uichiro et al. | 1994
- 7756
-
Synchrotron radiation topography studies of twinning in NdP5O14 crystalsHuang, X. R. / Hu, Z. W. / Jiang, S. S. / Jiang, J. H. / Tian, Y. L. / Han, Y. / Wang, J. Y. et al. | 1994
- 7761
-
X‐ray diffraction from laterally structured surfaces: Crystal truncation rodsTolan, M. / Press, W. / Brinkop, F. / Kotthaus, J. P. et al. | 1994
- 7770
-
Trapping of hydrogen impurities in helium‐implanted niobium and tantalumHaussalo, P. / Keinonen, J. / Ja¨ske, U.‐M. / Sievinen, J. et al. | 1994
- 7774
-
Ion implantation into (x11)A‐oriented InP and GaAs (x≤4)Rao, Mulpuri V. / Dietrich, Harry B. / Klein, P. B. / Fathimulla, Ayub / Simons, David S. / Chi, Peter H. et al. | 1994
- 7774
-
Ion implantation into (x11)A-oriented InP and GaAs (x<=4)Rao, Mulpuri V. et al. | 1994
- 7779
-
Visible photoluminescence in Si+‐implanted silica glassShimizu‐Iwayama, Tsutomu / Fujita, Katsunori / Nakao, Setsuo / Saitoh, Kazuo / Fujita, Tetsuo / Itoh, Noriaki et al. | 1994
- 7784
-
Single-crystal elastic constants of fluorapatite, Ca5F (PO(sub 4))3Sha, Michael C. et al. | 1994
- 7784
-
Single‐crystal elastic constants of fluorapatite, Ca5F (PO4)3Sha, Michael C. / Li, Zhuang / Bradt, Richard C. et al. | 1994
- 7788
-
Fast crystallizing GeSb alloys for optical data storageSolis, J. / Afonso, C. N. / Trull, J. F. / Morilla, M. C. et al. | 1994
- 7795
-
Measurements of thermal conductivity of diamond films by photothermal deflection techniqueBertolotti, M. / Liakhou, G. L. / Ferrari, A. / Ralchenko, V. G. / Smolin, A. A. / Obraztsova, Elena / Korotoushenko, K. G. / Pimenov, S. M. / Konov, V. I. et al. | 1994
- 7799
-
Computer simulation of electromigration in thin‐film metal conductorsTrattles, J. T. / O’Neill, A. G. / Mecrow, B. C. et al. | 1994
- 7805
-
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. I. Growth conditionsLang, O. / Schlaf, R. / Tomm, Y. / Pettenkofer, C. / Jaegermann, W. et al. | 1994
- 7814
-
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy. II. Junction characterizationLang, O. / Tomm, Y. / Schlaf, R. / Pettenkofer, C. / Jaegermann, W. et al. | 1994
- 7821
-
Nitrogen‐doped ZnSe with selenium‐rich growth by low‐pressure organometallic chemical vapor depositionLee, M. K. / Yeh, M. Y. / Guo, S. J. / Huang, H. D. et al. | 1994
- 7825
-
Study of interdiffusion in Pd/Cu multilayered films by Auger depth profilingJeon, I. J. / Hong, J. H. / Lee, Y. P. et al. | 1994
- 7825
-
Study of interdiffusion in Pd/Cu multilayers films by Auger depth profilingJeon, I.J. / Hong, J.H. / Lee, Y.P. et al. | 1994
- 7829
-
Oxygen incorporation and oxygen‐induced defect formation in thin Si and Si1−xGex layers on silicon grown by chemical vapor deposition at atmospheric pressureKru¨ger, D. / Morgenstern, Th. / Kurps, R. / Bugiel, E. / Quick, Ch. / Ku¨hne, H. et al. | 1994
- 7835
-
Effect of As4/Ga flux ratio on electrical and optical properties of low‐temperature GaAs grown by molecular beam epitaxyO’Hagan, S. / Missous, M. et al. | 1994
- 7842
-
Effect of anisotropy on the excess stress and critical thickness of capped Si1−xGex strained layersShintani, K. / Fujita, K. et al. | 1994
- 7842
-
Effect of anisotropy on the excess and critical thickness of capped Si(1-x)Ge(x) strained layersShintani, K. / Fujita, K. et al. | 1994
- 7847
-
Thermal stability study of TiN/TiSi2 diffusion barrier between Cu andd n(+)SiChang, Tzong-Sheng / Wang, Wen-Chun / Wang, Lih-Ping / Hwang, Jenn-Chang / Huang, Fon-Shan et al. | 1994
- 7847
-
Thermal stability study of TiN/TiSi2 diffusion barrier between Cu and n+SiChang, Tzong‐Sheng / Wang, Wen‐Chun / Wang, Lih‐Ping / Hwang, Jenn‐Chang / Huang, Fon‐Shan et al. | 1994
- 7852
-
Atomic ordering and domain structures in metal organic chemical vapor deposition grown InGaAs (001) layersSeong, Tae‐Yeon / Norman, A. G. / Booker, G. R. / Cullis, A. G. et al. | 1994
- 7866
-
Structural characterization of a bonded silicon‐on‐insulator layer with voids by micro‐Raman spectroscopyUsami, Akira / Ichimura, Masaya / Wada, Takao / Ishigami, Shun‐ichiro et al. | 1994
- 7869
-
Dopant electrical activity of Si and Si1−xGex multilayer structures doped with δ‐like boron spikes at different temperaturesGaworzewski, P. / Kru¨ger, D. / Kurps, R. / Ru¨cker, H. / Zeindl, H. P. et al. | 1994
- 7869
-
Dopant electrical activity of Si and Si(1-x)Ge(x) multilayer structures doped with delta-like boron spikes at different temperaturesGawaorzewski, P. / Krüger, D. / Kurps, R. / Rücker, H. / Zeindl, H.P. et al. | 1994
- 7869
-
Dopant electrical activity of Si and Si1-xGex multilayer structures doped with d-like boron spikes at different temperaturesGaworzewski, P. et al. | 1994
- 7875
-
Crystallization in fluorinated and hydrogenated amorphous silicon thin filmsEdelman, F. / Cytermann, C. / Brener, R. / Eizenberg, M. / Khait, Yu. L. / Weil, R. / Beyer, W. et al. | 1994
- 7881
-
Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxyPonchet, A. / Rocher, A. / Ougazzaden, A. / Mircea, A. et al. | 1994
- 7884
-
A complete characterization of trapping levels in red mercuric iodide single crystalsSharma, S. L. / Pal, T. / Acharya, H. N. et al. | 1994
- 7894
-
New insights into the compensation mechanism of Fe‐doped InPZach, F. X. et al. | 1994
- 7904
-
Electron mobility in Hg0.78Cd0.22Te alloyKrishnamurthy, Srinivasan / Sher, Arden et al. | 1994
- 7910
-
Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectorsMcGregor, Douglas S. / Rojeski, Ronald A. / Knoll, Glenn F. / Terry, Fred L. / East, Jack / Eisen, Yosef et al. | 1994
- 7916
-
Annealing effects on the electrical properties and microscopic structure of semi‐insulating polycrystalline silicon filmsCho, Wonju / Takeuchi, Yuji / Kuwano, Hiroshi et al. | 1994
- 7922
-
High frequency capacitance behavior of metal‐oxide‐semiconductor tunnel structuresBredimas, Vassiliki et al. | 1994
- 7931
-
Depth profile of thermal donor in boron‐doped Czochralski‐grown siliconFilangeri, Edward M. / Nishida, Toshikazu et al. | 1994
- 7935
-
An analytical saturation region model for amorphous silicon thin film transistors using a quasi‐two‐dimensional and an effective temperature approachChen, S. S. / Kuo, J. B. et al. | 1994
- 7942
-
Many‐body effects on temperature dependence of the interband absorption in quantum wellsGumbs, Godfrey / Huang, Danhong / Fessatidis, Vassilios et al. | 1994
- 7949
-
Measurement of n‐type dry thermally oxidized 6H‐SiC metal‐oxide‐semiconductor diodes by quasistatic and high‐frequency capacitance versus voltage and capacitance transient techniquesNeudeck, P. / Kang, S. / Petit, J. / Tabib‐Azar, M. et al. | 1994
- 7949
-
Measurements of n-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniquesNeudeck, P. / Kang, S. / Petit, J. / Tabib-Azar, M. et al. | 1994
- 7954
-
Effects of order and disorder on field‐effect mobilities measured in conjugated polymer thin‐film transistorsHolland, E. R. / Bloor, D. / Monkman, A. P. / Brown, A. / De Leeuw, D. / Bouman, M. M. / Meijer, E. W. et al. | 1994
- 7958
-
YBa2Cu3O7−x films on yttria‐stabilized ZrO2 substrates: Influence of the substrate morphologyBrorsson, G. / Olsson, E. / Ivanov, Z. G. / Stepantsov, E. A. / Alarco, J. A. / Boikov, Yu. / Claeson, T. / Berastegui, P. / Langer, V. / Lo¨fgren, M. et al. | 1994
- 7966
-
High-resolution x-ray scattering studies of epitaxial GdBa 2)Cu3O7-d thin filmsCox, U.J. et al. | 1994
- 7966
-
High‐resolution x‐ray scattering studies of epitaxial GdBa2Cu3O7−δ thin filmsCox, U. J. / Crain, J. / Hatton, P. D. / Green, G. S. / Dai, D. Y. et al. | 1994
- 7966
-
High-resolution x-ray scattering studies of epitaxial GdBa2Cu3O(7-delta) thin filmsCox, U.J. / Crain, J. / Hatton, P.D. / Green, G.S. / Dai, D.Y. et al. | 1994
- 7972
-
Bicrystal junctions and superconducting quantum interference devices in YBa2Cu3O7 thin filmsNilsson, P. A˚. / Ivanov, Z. G. / Olsson, H. K. / Winkler, D. / Claeson, T. / Stepantsov, E. A. / Tzalenchuk, A. Ya. et al. | 1994
- 7978
-
Optical and electronic properties modifications in Pd‐Ni multilayersLogothetidis, S. / Flevaris, N. K. et al. | 1994
- 7983
-
Characterization of the magnetic easy axis in pipeline steel using magnetic Barkhausen noiseKrause, Thomas W. / Clapham, L. / Atherton, David L. et al. | 1994
- 7989
-
Investigation of the magnetization reversal mode for individual ellipsoidal single-domain particles of g-Fe2O3Salling, C. et al. | 1994
- 7989
-
Investigation of the magnetization reversal mode for individual ellipsoidal single-domain particles of gamma-Fe~2O~3Salling, C. / O'Barr, R. / Schultz, S. / McFadyen, I. et al. | 1994
- 7989
-
Investigation of the magnetization reversal mode for individual ellipsoidal single‐domain particles of γ‐Fe2O3Salling, C. / O’Barr, R. / Schultz, S. / McFadyen, I. / Ozaki, M. et al. | 1994
- 7993
-
Numerical analysis of the magnetization in soft adjacent layer biased magnetoresistive sensorsShiiki, Kazuo / Mitsui, Yu et al. | 1994
- 7998
-
Structural and electrical properties of rf magnetron‐sputtered Ba1−xSrxTiO3 thin films on indium‐tin‐oxide‐coated glass substrateKim, Tae Song / Kim, Chong Hee / Oh, Myung Hwan et al. | 1994
- 8004
-
Irreversible alterations of ferroelectric domain structure in paramagnetic rare earth molybdates induced by a magnetic fieldPonomarev, B. K. / Ivanov, S. A. / Red’kin, B. S. / Kurlov, V. N. et al. | 1994
- 8008
-
Electroluminescence in porous siliconSabet‐Dariani, R. / McAlpine, N. S. / Haneman, D. et al. | 1994
- 8012
-
Infrared transitions in strained‐layer GexSi1−x/SiKahan, A. / Chi, M. / Friedman, L. et al. | 1994
- 8022
-
Electroabsorption and light modulation with ZnSe/ZnSSe multiquantum wells grown by metalorganic vapor phase epitaxyMarquardt, E. / Opitz, B. / Scholl, M. / Heuken, M. et al. | 1994
- 8027
-
Time‐resolved thermal‐emission electron microscopy of laser‐pulsed metal surfacesScha¨fer, B. / Knecht, T. / Bostanjoglo, O. et al. | 1994
- 8032
-
Raman spectroscopy and spreading resistance analysis of phosphorus implanted and annealed siliconOthonos, Andreas / Christofides, Constantinos / Boussey‐Said, Joumana / Bisson, Michel et al. | 1994
- 8039
-
Quantum‐size effects on the band edge of CdTe clusters in glassPotter, B. G. / Simmons, J. H. / Kumar, P. / Stanton, C. J. et al. | 1994
- 8046
-
Determination of the band offset in semimagnetic CdTe/Cd1−xMnxTe quantum wells: A comparison of two methodsKuhn‐Heinrich, B. / Ossau, W. / Litz, T. / Waag, A. / Landwehr, G. et al. | 1994
- 8053
-
Measurement of the refractive index of AlxGa1−xAs and the mode indices of guided modes by a grating coupling techniqueKaufman, R. G. / Hulse, G. R. / Vezzetti, D. J. / Moretti, A. L. / Stair, K. A. / Devane, G. P. / Bird, T. E. et al. | 1994
- 8053
-
Measurement of the refractive index of Al(x)Ga(1-x)As and the mode indices of guided modes by a grating coupling techniquesKaufman, R.G. / Hulse, G.R. / Vezzetti, D.J. / Moretti, A.L. / Stair, K.A. / Devane, G.P. / Bird, T.E. et al. | 1994
- 8060
-
Light‐emission phenomena from porous silicon: Siloxene compounds and quantum size effectLee, H.‐J. / Seo, Y. H. / Oh, D.‐H. / Nahm, K. S. / Hahn, Y. B. / Jeon, I. C. / Suh, E.‐K. / Lee, Y. H. / Lee, H. J. et al. | 1994
- 8066
-
Room temperature photoluminescence in the 1 μm region from InAs monolayer structuresDosanjh, S. S. / Hart, L. / Nayak, R. / Joyce, B. A. et al. | 1994
- 8066
-
Room temperature photoluminescence in the 1 micron region from InAs monolayer structuresDosanjh, S.S. / Hart, L. / Nayak, R. / Joyce, B.A. et al. | 1994
- 8066
-
Room temperature photoluminescence in the 1 mm region from InAs monolayer structuresDosanjh, S.S. et al. | 1994
- 8071
-
Photoluminescence studies of sidewall properties of dry‐etched InGaAs/InP quantum wiresGu, S. Q. / Liu, X. / Covington, M. / Reuter, E. / Chang, H. / Panepucci, R. / Adesida, I. / Bishop, S. G. / Caneau, C. / Bhat, R. et al. | 1994
- 8075
-
Remote oxygen‐containing hydrogen plasma treatment of porous siliconGru¨ning, U. / Gujrathi, S. C. / Poulin, S. / Diawara, Y. / Yelon, A. et al. | 1994
- 8080
-
Cathodoluminescence study of domains, defects, and interdiffusion in ZnSe/GaAs(100)Lin, H. T. / Rich, D. H. / Wittry, D. B. et al. | 1994
- 8085
-
Increase of multilayer x‐ray reflectivity induced by pulsed laser heatingZigler, Arie / Fraenkel, Moshe / Henis, Zohar / Kolka, Eyal / Eliezer, Shalom et al. | 1994
- 8090
-
Photopyroelectric deconvolution of bulk and surface optical‐absorption and nonradiative energy conversion efficiency spectra in Ti:Al2O3 crystalsVanniasinkam, J. / Mandelis, A. / Buddhudu, S. / Kokta, M. et al. | 1994
- 8098
-
Measurements of alloy composition and strain in thin GexSi1−x layersTsang, J. C. / Mooney, P. M. / Dacol, F. / Chu, J. O. et al. | 1994
- 8098
-
Measurements of alloy composition and strain in thin GexSi(sub 1-x) layersTsang, J.C. et al. | 1994
- 8109
-
Collisional versus electronic sputtering of SiO2Jacobsson, Harald / Holme´n, G. et al. | 1994
- 8114
-
Compositional variations in Ti‐W films sputtered over topographical featuresLiu, D. / Dew, S. K. / Brett, M. J. / Smy, T. / Tsai, W. et al. | 1994
- 8121
-
The chemical oxidation of hydrogen‐terminated silicon (111) surfaces in water studied in situ with Fourier transform infrared spectroscopyBoonekamp, E. P. / Kelly, J. J. / van de Ven, J. / Sondag, A. H. M. et al. | 1994
- 8128
-
Eddy‐current interaction with an ideal crack. I. The forward problemBowler, J. R. et al. | 1994
- 8138
-
Eddy‐current interaction with an ideal crack. II. The inverse problemBowler, John R. / Norton, Stephen J. / Harrison, David J. et al. | 1994
- 8145
-
Effect of reactive‐ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion‐beam sputteringRay, S. K. / Das, S. / Maiti, C. K. / Lahiri, S. K. / Chakraborti, N. B. et al. | 1994
- 8153
-
Recovery of recombination lifetime by pouring de‐ionized water onto a rotating plasma‐damaged waferItsumi, Manabu / Aoyama, Shinji et al. | 1994
- 8158
-
Effect of multiple reflection propagation on photon recycling in GaAs/AlGaAs double heterostructuresMiller, K. L. / Fardi, H. Z. / Hayes, R. E. et al. | 1994
- 8163
-
Resistive measurement of the temperature dependence of the penetration depth of Nb in Nb/AlOx/Nb Josephson junctionsKim, D. H. / Gray, K. E. / Hettinger, J. D. / Kang, J. H. / Choi, S. S. et al. | 1994
- 8168
-
A planar two‐dimensional circular aperture metal grating coupler for quantum well infrared photodetectorsWang, Yeong‐cheng / Li, Sheng S. et al. | 1994
- 8175
-
Comparison and analysis of Pd‐ and Pt‐GaAs Schottky diodes for hydrogen detectionKang, W. P. / Gu¨rbu¨z, Y. et al. | 1994
- 8182
-
Steady‐state Nyquist theorem for multi‐terminal nondegenerate semiconductor devicesLee, J. B. / Min, H. S. / Park, Y. J. et al. | 1994
- 8195
-
Excess current in shunted Josephson weak linksSeed, R. G. / Vittoria, C. / Widom, A. et al. | 1994
- 8198
-
A simple method for determining band‐gap energies from inhomogeneous electric field electroreflection spectra applied to GaAsPoras, H. / Wang, H. / Goldsmith, G. J. / Pan, N. et al. | 1994
- 8201
-
Studies of threshold current dependence on compressive and tensile strain of 630 nm GaInP/AlGaInP multi‐quantum‐well lasersKamiyama, Satoshi / Monnoh, Masaya / Ohnaka, Kiyoshi / Uenoyama, Takeshi et al. | 1994
- 8204
-
Band‐to‐band recombination in Ga0.5In0.5PStrauss, U. / Ru¨hle, W. W. / Queisser, H. J. / Nakano, K. / Ishibashi, A. et al. | 1994
- 8207
-
Effect of plasma shielding in laser ultrasonics: Optoacoustic characterizationHrovatin, Rok / Mozˇina, Janez et al. | 1994
- 8210
-
Noise and impedance of n+‐n‐n+ InP microwave generatorsGruzinskis, V. / Mitin, V. / Starikov, E. / Shiktorov, P. et al. | 1994
- 8213
-
Modeling of suppressed dopant activation in boron‐ and BF2‐implanted siliconKinoshita, H. / Huang, T. H. / Kwong, D. L. et al. | 1994
- 8216
-
Structural and optical properties in ZnTe/GaAs strained heterostructures grown by temperature‐gradient vapor transport depositionLee, J. H. / Jang, K. S. / Shin, C. S. / Park, H. L. / Kim, T. W. et al. | 1994
- 8219
-
Microwave dielectric resonance of a fluoride glassTaijing, Lu / Dai, Yisheng / Ding, X. Z. / Ong, C. K. / Tan, B. T. G. et al. | 1994
- 8222
-
Enhanced field control of second‐harmonic generation in compositionally asymmetrical quantum wellsDave´, Digant P. et al. | 1994
- 8225
-
Photoinduced scanning tunneling microscopy of insulating diamond filmsMercer, T. W. / Carroll, D. L. / Liang, Y. / DiNardo, N. J. / Bonnell, D. A. et al. | 1994
- 8228
-
Optical control of polarity in short electrical pulses generated from coplanar waveguide metal‐semiconductor‐metal photodetectorsShu, C. / Choy, H. S. / She, T. C. et al. | 1994
- 8231
-
Electrical characterization of ZnSe epitaxial layer reactive‐ion‐etched by a gas mixture of ethane and hydrogenOhtsuka, K. / Imaizumi, M. / Endoh, Y. / Suita, M. / Isu, T. / Nunoshita, M. et al. | 1994
- 8234
-
Postgrowth tuning of quantum‐well infrared detectors by rapid thermal annealingSteele, A. G. / Buchanan, M. / Liu, H. C. / Wasilewski, Z. R. et al. | 1994
- 8237
-
Wavelength dependence of the photoablation of carbon at low irradianceAbhilasha / Dwivedi, R. K. / Thareja, R. K. et al. | 1994
- 8240
-
589 nm light generation by intracavity mixing in a Nd:YAG laserDanailov, M. B. / Apai, P. et al. | 1994
- 8243
-
A deep‐level spectroscopic technique for determining capture cross‐section activation energy of Si‐related DX centers in AlxGa1−xAsGhosh, Subhasis / Kumar, Vikram et al. | 1994
- 8246
-
"A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors" [J. Appl. Phys. 74, 7344 (1993)]Stareev, G. / Kuenzel, H. / Dortmann, G. et al. | 1994
- 8246
-
Erratum: ‘‘A controllable mechanism of forming extremely low‐resistance nonalloyed ohmic contacts to group III‐V compound semiconductors’’ [J. Appl. Phys. 74, 7344 (1993)]Stareev, G. / Ku¨nzel, H. / Dortmann, G. et al. | 1994
- 8247
-
Summary of the Physics and Astronomy Classification Scheme--1994| 1994
- 8248
-
PACS Headings Used in the Present Index| 1994
- 8252
-
Subject Index to Volume 75| 1994
- 8341
-
Author Index to Volume 75| 1994