Activated reactive laser deposition of GeO~2 films (Unknown)
- New search for: Witanachchi, S.
- New search for: Wolf, P. J.
- New search for: Witanachchi, S.
- New search for: Wolf, P. J.
In:
JOURNAL OF APPLIED PHYSICS
;
76
, 4
;
2185
;
1994
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ISSN:
- Article (Journal) / Print
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Title:Activated reactive laser deposition of GeO~2 films
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Contributors:Witanachchi, S. ( author ) / Wolf, P. J. ( author )
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Published in:JOURNAL OF APPLIED PHYSICS ; 76, 4 ; 2185
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Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
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Publication date:1994-01-01
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Size:2185 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
- New search for: 530.5 / 530
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Classification:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 76, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2007
-
Compton scattering tomographyNorton, Stephen J. et al. | 1994
- 2016
-
Empirical forms for the electron/atom elastic scattering cross sections from 0.1 to 30 keVBrowning, R. / Li, T. Z. / Chui, B. / Ye, Jun / Pease, R. F. W. / Czyz˙ewski, Z. / Joy, D. C. et al. | 1994
- 2023
-
The photonic band edge optical diodeScalora, Michael / Dowling, Jonathan P. / Bowden, Charles M. / Bloemer, Mark J. et al. | 1994
- 2027
-
Numerical investigation of the self‐focusing of broad‐bandwidth laser light with applied angular dispersionMcKenty, P. W. / Skupsky, S. / Kelly, J. H. / Cotton, C. T. et al. | 1994
- 2036
-
Transmission loss characteristics of telluride‐based chalcogenide glass optical fibersKatsuyama, Toshio / Matsumura, Hiroyoshi et al. | 1994
- 2041
-
Electron‐density and energy distributions in a planar inductively coupled dischargeMahoney, Leonard J. / Wendt, Amy E. / Barrios, Ernesto / Richards, Carolyn J. / Shohet, J. Leon et al. | 1994
- 2048
-
Spatial variation of the electron distribution function in a rf inductively coupled plasma: Experimental and theoretical studyKortshagen, U. / Pukropski, I. / Zethoff, M. et al. | 1994
- 2059
-
Chaotic responses in electric arc furnacesKing, Paul E. / Ochs, Thomas L. / Hartman, Alan D. et al. | 1994
- 2066
-
Strain and mosaic spread of carbon and gallium co‐implanted GaAsHorng, S. T. / Goorsky, M. S. / Madok, J. H. / Haegel, N. M. et al. | 1994
- 2070
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Al‐O interactions in ion‐implanted crystalline siliconGalvagno, G. / La Ferla, A. / Spinella, C. / Priolo, F. / Raineri, V. / Torrisi, Lucio / Rimini, E. / Carnera, A. / Gasparotto, A. et al. | 1994
- 2078
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Suppression of AlSb oxidation with hydrocarbon passivation layer induced by MeV‐He+ irradiationNakata, Jyoji / Shibata, Tomohiro / Nanishi, Yasushi / Fujimoto, Masatomo et al. | 1994
- 2086
-
B‐site order and infrared reflectivity in A(B’B‘)O3 complex perovskite ceramicsReaney, I. M. / Petzelt, J. / Voitsekhovskii, V. V. / Chu, F. / Setter, N. et al. | 1994
- 2093
-
Hydrogen blisters on β‐NbD after laser pulse heatingSchober, T. / Bechthold, P. S. et al. | 1994
- 2093
-
Hydrogen blisters on b-NbD after laser pulse heatingSchober, T. et al. | 1994
- 2097
-
Point defects and thermoelectric properties of iron disilicide ceramics sintered with SiH4‐plasma‐processed micrograinsMiki, T. / Matsui, Y. / Teraoka, Y. / Ebina, Y. / Matsubara, K. / Kishimoto, K. et al. | 1994
- 2104
-
Range profiles of 600–1200 keV Xe+ implanted in KTiOPO4Wang, Ke‐Ming / Ding, Pei‐Jun / Wang, Wei / Lanford, W. A. / Shi, Bo‐Rong / Yu, Zheng‐Gang / Lu, Qing‐Ming et al. | 1994
- 2109
-
Role of structural relaxations in the fracture of vitreous silicaMichalske, Terry A. / Smith, William L. / Houston, Jack E. et al. | 1994
- 2115
-
Dislocation‐free zone model of fracture: The effect of transgranular microcrack nucleated from a grain‐boundary ledgeShiue, Sham‐Tsong et al. | 1994
- 2122
-
Dilatometric and thermo‐optic properties of alkaline earth and cadmium fluorides between 300 and 1300 KAurora, T. S. / Day, S. M. / Pederson, D. O. et al. | 1994
- 2129
-
Shock‐induced and shock‐assisted solid‐state chemical reactions in powder mixturesThadhani, N. N. et al. | 1994
- 2139
-
Characterization of Pb0.97Nd0.02(Zr0.55Ti0.45)O3 thin films prepared by pulsed laser ablationFrantti, J. / Lantto, V. et al. | 1994
- 2139
-
Characterization of Pb(0.97)Nd(0.22)(Zr(0.55)Ti(0.45))O3 thin films prepared by pulsed laser ablationFrantti, J. / Lantto, V. et al. | 1994
- 2144
-
Structure and performance of Si/Mo multilayer mirrors for the extreme ultravioletSlaughter, J. M. / Schulze, Dean W. / Hills, C. R. / Mirone, A. / Stalio, R. / Watts, R. N. / Tarrio, C. / Lucatorto, T. B. / Krumrey, M. / Mueller, P. et al. | 1994
- 2157
-
Infrared spectroscopy study of initial stages of oxidation of hydrogen‐terminated Si surfaces stored in airNiwano, Michio / Kageyama, Jun‐ichi / Kurita, Kazunari / Kinashi, Koji / Takahashi, Isao / Miyamoto, Nobuo et al. | 1994
- 2164
-
Chemically vapor deposited diamond films grown on titanium nitride coated and uncoated iron substratesWeiser, Paul S. / Prawer, Steven / Hoffman, Alon / Paterson, Peter J. K. / Manory, Rafael R. et al. | 1994
- 2169
-
Reaction of Ta thin film with single crystalline (001) β‐SiCChen, J. S. / Kolawa, E. / Nicolet, M.‐A. / Ruiz, R. P. / Baud, L. / Jaussaud, C. / Madar, R. et al. | 1994
- 2169
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Reaction of Ta thin film with single crystalline (001) beta-SiCChen, J.S. / Kolawa, E. / Nicolet, M.A. / Ruiz, R.P. / Baud, L. / Jaussaud, C. / Mader, R. et al. | 1994
- 2169
-
Reaction of Ta thin film with single crystalline (001) b-SiCChen, J.S. et al. | 1994
- 2176
-
Brillouin scattering study of the pseudosurface acoustic mode on the (110) face of cubic crystals having elastic anisotropy ratio above unityAleksandrov, V. V. / Gladkevitch, A. / Mozhaev, V. G. / Giovannini, L. / Nizzoli, F. et al. | 1994
- 2181
-
Epitaxial orientation of PtSi grown by Pt deposition on heated Si(001) substrateKonuma, K. / Utsumi, H. et al. | 1994
- 2185
-
Activated reactive laser deposition of GeO2 filmsWitanachchi, Sarath / Wolf, Paul J. et al. | 1994
- 2191
-
X-ray in situ observation of relaxation and diffusion processes in Si1-xGex Iayers on silicon substratesZaumseil, P. et al. | 1994
- 2191
-
X‐ray in situ observation of relaxation and diffusion processes in Si1−xGex layers on silicon substratesZaumseil, P. / Jagdhold, U. / Kru¨ger, D. et al. | 1994
- 2197
-
Reconstruction controlled dopant incorporation and ‘‘coercion’’ effects in molecular‐beam epitaxial germanium grown on gallium arsenideWood, C. E. C. / Tabatabaei, S. A. / Mimomye, L. V. / Grober, L. M. et al. | 1994
- 2202
-
Structural investigation of Fe silicide films grown by pulsed laser depositionKarpenko, O. P. / Olk, C. H. / Yalisove, S. M. / Mansfield, J. F. / Doll, G. L. et al. | 1994
- 2208
-
Ohmic contacts on diamond by B ion implantation and TiC‐Au and TaSi2‐Au metallizationDas, K. / Venkatesan, V. / Humphreys, T. P. et al. | 1994
- 2213
-
Donor-doping characteristics of gas-source molecular beam epitaxial Si and S1-xGex using phosphineLi, S.H. et al. | 1994
- 2213
-
Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGex using phosphineLi, S. H. / Bhattacharya, P. K. et al. | 1994
- 2216
-
Trapping levels in Bi12SiO20 crystalsPetre, D. / Pintilie, I. / Botila, T. / Ciurea, M. L. et al. | 1994
- 2220
-
A description of the temperature dependence of the conductivity for composite polymeric electrolytes by effective medium theoryWieczorek, W. / Siekierski, M. et al. | 1994
- 2227
-
Study of classical Hall effect in an amorphous As2S3 semiconducting glassSingh, K. / Asiamah, Stephen et al. | 1994
- 2235
-
Evaluation of anisotropic thermoelectricity of sintered Bi2Te3 on the basis of the orientation distribution of crystallitesOhsugi, I. J. / Kojima, T. / Sakata, M. / Yamanashi, M. / Nishida, I. A. et al. | 1994
- 2240
-
Quantum transmitting boundary method in a magnetic fieldLeng, Manhua / Lent, Craig S. et al. | 1994
- 2249
-
Transport coefficients and thermoelectric figure of merit of n‐Hg1−xCdxTeSofo, J. O. / Mahan, G. D. / Baars, J. et al. | 1994
- 2255
-
Femtosecond relaxation of minority electrons in heavily carbon‐doped GaAsDavidson, Andrew / Compton, Richard C. / Wise, Frank / Mars, Dan / Miller, Jeff et al. | 1994
- 2260
-
Charged defect states in intrinsic hydrogenated amorphous silicon filmsGu¨nes¸, Mehmet / Wronski, Christopher R. / McMahon, T. J. et al. | 1994
- 2264
-
Temperature effects in the multiphoton photoemission of laser irradiated a-SiO2Martin, Philippe et al. | 1994
- 2264
-
Temperature effects in the multiphoton photoemission of laser irradiated α‐SiO2Martin, Philippe / Guizard, Ste´phane / Petite, Guillaume et al. | 1994
- 2270
-
Electrical properties of contact etched p‐Si: A comparison between magnetically enhanced and conventional reactive ion etchingAwadelkarim, O. O. / Mikulan, P. I. / Gu, T. / Reinhardt, K. A. / Chan, Y. D. et al. | 1994
- 2279
-
Electron trapping in oxynitride layers in metal‐oxide‐semiconductor structuresRahat, Ido / Shappir, Joseph et al. | 1994
- 2284
-
Suppression of interface‐state generation in reoxidized nitrided oxide gate dielectricsKrisch, K. S. / Sodini, C. G. et al. | 1994
- 2293
-
Formation of ohmic contacts to p‐type diamond using carbide forming metalsNakanishi, Jiro / Otsuki, A. / Oku, T. / Ishiwata, O. / Murakami, Masanori et al. | 1994
- 2299
-
The effect of electric field on the excitonic states in coupled quantum well structuresTakahashi, Yutaka / Kato, Yoshimine / Kano, Satoru S. / Fukatsu, Susumu / Shiraki, Yasuhiro / Ito, Ryoichi et al. | 1994
- 2306
-
Surface acoustic wave: Acoustogyric effectWalikainen, D. / Levy, M. et al. | 1994
- 2310
-
Hole drift mobility measurements in amorphous silicon‐carbon alloysGu, Qing / Wang, Qi / Schiff, Eric A. / Li, Yuan‐Min / Malone, Charles T. et al. | 1994
- 2316
-
Self‐consistent k⋅p band structure calculation for AlGaAs/InGaAs pseudomorphic high electron mobility transistorsJogai, B. et al. | 1994
- 2324
-
InAlAs/InP heterostructures: Influence of a thin InAs layer at the interfaceVignaud, D. / Wallart, X. / Mollot, F. et al. | 1994
- 2330
-
Electrical transport properties and confinement potential analysis of buried AlGaAs/GaAs quantum wiresNakata, S. / Tomizawa, M. / Yamamoto, M. / Ikuta, K. / Mizutani, T. et al. | 1994
- 2336
-
Reverse I‐V and C‐V characteristics of Schottky barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor phase epitaxySingh, A. / Cova, P. / Masut, R. A. et al. | 1994
- 2343
-
Valley current of three‐dimensional resonant tunneling diode studied by the improved optical modelZohta, Yasuhito / Tanamoto, Tetsufumi et al. | 1994
- 2347
-
Dependence of valence‐subband dispersion relations on heterointerface boundary conditions in InxGa1−xAsyP1−y/InP narrow quantum wellsYamanaka, Takayuki / Kamada, Hidehiko / Yoshikuni, Yuzo / Lui, Wayne W. / Seki, Shunji / Yokoyama, Kiyoyuki et al. | 1994
- 2347
-
Dependence of valence-subband dispersion relations on heterointerface boundary conditions in In~xGa~y~-~xAs~yP~1~-~y/InP narrow quantum wellsYamanaka, T. / Kamada, H. / Yoshikuni, Y. / Lui, W. W. et al. | 1994
- 2357
-
Influence of hydrogenation on inter- and intragranular critical currents in YBa2Cu3O7-dCiszek, M. et al. | 1994
- 2357
-
Influence of hydrogenation on inter- and intragranular critical currents in YBa2Cu3O(7-delta)Ciszek, M. / Klamut, J. / Zaleski, A.J. / Drulis, H. / Klamut, P.W. / Olejniczak, J. et al. | 1994
- 2357
-
Influence of hydrogenation on inter‐ and intragranular critical currents in YBa2Cu3O7−δCiszek, M. / Klamut, J. / Zaleski, A. J. / Drulis, H. / Klamut, P. W. / Olejniczak, J. et al. | 1994
- 2361
-
Surface pinning and Lorentz force dependence of transport critical current in NbTa thin films and heterostructuresKumar, D. / Blamire, M. G. / Doyle, R. / Campbell, A. M. / Evetts, J. E. et al. | 1994
- 2368
-
Quasiparticle trapping and the density of states in superconducting proximity structuresWarburton, P. A. / Blamire, M. G. et al. | 1994
- 2376
-
Electrical transport and superconductivity in YBa2Cu 3)O7-d-YBa2HfO5.5 percolation systemThomas, J.K. et al. | 1994
- 2376
-
Electrical transport and superconductivity in YBa2Cu3O7−δ ‐YBa2HfO5.5 percolation systemThomas, J. K. / Koshy, J. / Kurian, J. / Yadava, Y. P. / Damodaran, A. D. et al. | 1994
- 2376
-
Electrical transport and superconductivity in YBa2Cu3O(7-delta)-YBa2HfO(5.5) percolation systemThomas, J.K. / Koshy, J. / Kurian, J. / Yadava, Y.P. / Damodaran, A.D. et al. | 1994
- 2380
-
Experimental evidence of resputtering of the yttria layer in a YBa2Cu3O7−x/Y2O3/YBa2Cu3O7−x trilayer filmWaytena, G. L. / Hoff, H. A. / Vold, C. L. / Broussard, P. R. / Claassen, J. H. / Cestone, V. C. / Sprague, J. A. et al. | 1994
- 2387
-
Structure and magnetic properties of Co/Cu multilayer filmsKim, J. D. / Petford‐Long, A. K. / Jakubovics, J. P. / Evetts, J. E. / Somekh, R. et al. | 1994
- 2395
-
Initial permeability of composite‐anisotropy multilayer filmsShimada, Yutaka / Sugawara, Eishu / Fujimori, Hiroyasu et al. | 1994
- 2399
-
Fourier spectroscopy of elastic modes and anharmonic effects in LiNbO3de Souza, Ricardo E. / Engelsberg, M. / do Nascimento, George C. et al. | 1994
- 2405
-
Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer modelLarsen, P. K. / Dormans, G. J. M. / Taylor, D. J. / van Veldhoven, P. J. et al. | 1994
- 2414
-
Effect of conjugated bonds on the charging of insulating polymersGong, H. / Chooi, K. M. / Ong, C. K. et al. | 1994
- 2419
-
Electroluminescence of pure poly(N‐vinylcarbazole) and its blends with a multiblock copolymerHu, B. / Yang, Z. / Karasz, F. E. et al. | 1994
- 2423
-
Infrared spectroscopy and secondary ion mass spectrometry of luminescent, nonluminescent, and metal quenched porous siliconHilliard, J. / Andsager, D. / Abu Hassan, L. / Nayfeh, Hasan M. / Nayfeh, M. H. et al. | 1994
- 2429
-
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layerTeisseyre, H. / Perlin, P. / Suski, T. / Grzegory, I. / Porowski, S. / Jun, J. / Pietraszko, A. / Moustakas, T. D. et al. | 1994
- 2435
-
Raman and x‐ray studies of Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and TbMcBride, J. R. / Hass, K. C. / Poindexter, B. D. / Weber, W. H. et al. | 1994
- 2442
-
Conduction and valence band photoemission mechanisms in two‐dimensional–three‐dimensional structuresLin, Benjamin S. M. / Hwang, J. et al. | 1994
- 2448
-
Epifilm thickness measurements using Fourier transform infrared spectroscopy: Effect of refractive index dispersion and refractive index measurementZhou, Zhen‐Hong / Choi, Byungin / Flik, M. I. / Fan, S. / Reif, Rafael et al. | 1994
- 2455
-
Third‐order nonlinear susceptibility in GaAs/AlxGa1−xAs superlattice with a special layered structureDong, Hang / Xiong, Shi‐Jie et al. | 1994
- 2459
-
Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxyHase, A. / Ku¨nzel, H. / Zahn, D. R. T. / Richter, W. et al. | 1994
- 2459
-
Assessment of clustering induced internal strain in AllnAs on InP grown by molecular beam epitaxyHase, A. et al. | 1994
- 2466
-
Identification of defects and impurities in chemical‐vapor‐deposited diamond through infrared spectroscopyMcNamara, K. M. / Williams, B. E. / Gleason, K. K. / Scruggs, B. E. et al. | 1994
- 2473
-
Structural and optoelectronic properties of Ge‐rich hydrogenated amorphous silicon‐germanium alloysGraeff, C. F. O. / Chambouleyron, I. et al. | 1994
- 2479
-
Amplification of an electromagnetic wave in the polariton mode of magnetoplasmaIida, Takashi / Mizushima, Yoshihiko et al. | 1994
- 2484
-
A back‐side passivation film on a‐Si:H thin film transistorUchikoga, Shuichi / Kakinoki, Masami / Nakajima, Mitsuo / Suzuki, Kouji et al. | 1994
- 2490
-
Response linearity of Nb tunnel junction detectors for photon energies from 1.5 to 6.4 keVRando, N. / Peacock, A. / van Dordrecht, A. / Hu¨bner, P. / Videler, P. / Salmi, J. / Suni, I. et al. | 1994
- 2494
-
Characteristics of pseudomorphic AlGaAs-InxGa(sub1-x)As (0<=x<=025) doped-channel field-effect transistorsYang, Ming-Ta et al. | 1994
- 2494
-
Characteristics of pseudomorphic AlGaAs/InxGa1−xAs (0≤x≤0.25) doped‐channel field‐effect transistorsYang, Ming‐Ta / Chan, Yi‐Jen / Chen, Chun‐Hung / Chyi, Jen‐Inn / Lin, Ray‐Ming / Shieh, Jia‐Lin et al. | 1994
- 2494
-
Characteristics of pseudomorphic AlGaAs/In~xGa~1~-~xAs (Ox0.25) doped-channel field-effect transistorsYang, M.-T. / Chan, Y.-J. / Chen, C.-H. / Chyi, J.-I. et al. | 1994
- 2494
-
Characteristics of pseudomorphic AlGaAs/In(x)Ga(1-x)As (0 <= x <= 0.25) doped-channel field-effect transistorsYang, Ming-Ta / Chan, Yi-Jen / Chen, Chun-Hung / Chyi, Jen-Inn / Lin, Ray-Ming / Shieh, Jia-Lin et al. | 1994
- 2499
-
Electrical characterization and modeling of wide‐band‐gap porous silicon p‐n diodesChen, Zhiliang / Lee, Tzung‐Yin / Bosman, Gijs et al. | 1994
- 2505
-
Loss mechanisms in polyimide waveguidesKowalczyk, T. C. / Kosc, T. / Singer, K. D. / Cahill, P. A. / Seager, C. H. / Meinhardt, M. B. / Beuhler, A. J. / Wargowski, D. A. et al. | 1994
- 2509
-
Steady state model for facet heating leading to thermal runaway in semiconductor lasersSchatz, R. / Bethea, C. G. et al. | 1994
- 2522
-
Modeling of a low‐intensity electro‐optical semiconductor switching device due to intrinsic photoconductivityIvanov, A. L. / Haug, H. et al. | 1994
- 2529
-
Current‐noise‐power spectra of amorphous silicon thin‐film transistorsBoudry, J. M. / Antonuk, L. E. et al. | 1994
- 2535
-
Surface modification of YBa2Cu3Oy thin films with a scanning tunneling microscopeChen, Sufen / Wang, L. M. / Jian, W. B. / Wang, S. Y. / Yang, H. C. / Horng, H. E. et al. | 1994
- 2538
-
A GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked quantum well infrared photodetector for 3–5 and 8–14 μm detectionWang, Y. H. / Chiang, Jung‐chi / Li, Sheng S. / Ho, Pin et al. | 1994
- 2538
-
A GaAs-AlAs-AlGaAs and GaAs-AlGaAs stacked quantum well infrared photodetector for 3-5 and 8-14 mm detectionWang, Y.H. et al. | 1994
- 2541
-
Preparation of barium strontium titanate thin film capacitors on silicon by metallorganic decompositionCatalan, Antonio B. / Mantese, Joseph V. / Micheli, Adolph L. / Schubring, Norman W. / Poisson, Roger J. et al. | 1994
- 2544
-
Transport property of Si/Si1−xGex/Si p‐type modulation doped double heterostructureJiang, R. L. / Liu, J. L. / Zheng, Y. D. / Li, H. F. / Zheng, H. Z. et al. | 1994
- 2547
-
Energy levels of single and coupled quantum wells embedded in cylindrical buffer barriers affected by an axial magnetic fieldPing, Er‐Xuan / Dalal, Vikram et al. | 1994
- 2550
-
Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky gratingZia, O. / Bhattacharya, P. K. / Singh, J. / Brock, T. et al. | 1994
- 2553
-
Deep levels in alpha‐irradiated platinum doped n‐type siliconAsghar, M. / Baber, N. / Zafar Iqbal, M. et al. | 1994
- 2556
-
Solid Kr moderator for producing slow positronsMills, A. P. / Voris, S. S. / Andrew, Tamara S. et al. | 1994
- 2559
-
Hysteresis in the switching of hot electrons in InP/InGaAs double‐heterojunction bipolar transistorsMcAlister, S. P. / McKinnon, W. R. / Abid, Z. / Guzzo, E. E. et al. | 1994
- 2562
-
Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)]Berger, Paul R. / Chu, S. N. G. / Logan, R. A. / Byrne, Erin / Coblentz, D. / Lee, James / Ha, Nhan T. / Dutta, N. K. et al. | 1994
- 2562
-
"Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition" [J. Appl. Phys. 73, 4095 (1993)]Berger, P. R. / Chu, S. N. G. / Logan, R. A. / Byrne, E. et al. | 1994
- 2563
-
"Photoluminescence of Mg-ion implantation in low-temperature grown GaAs" [J. Appl. Phys. 75, 2628 (1994)]Yu, P. W. / Yen, M. Y. / Stutz, C. E. et al. | 1994
- 2563
-
Erratum: ‘‘Photoluminescence of Mg‐ion implantation in low‐temperature grown GaAs’’ [J. Appl. Phys. 75, 2628 (1994)]Yu, P. W. / Yen, M. Y. / Stutz, C. E. et al. | 1994
- 2564
-
CUMULATIVE AUTHOR INDEX| 1994