Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 m optical modulator (Unknown)
- New search for: Huang, Y.
- New search for: Wang, J.
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In:
JOURNAL OF APPLIED PHYSICS
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77
, 1
;
11
;
1995
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ISSN:
- Article (Journal) / Print
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Title:Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 m optical modulator
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Contributors:
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Published in:JOURNAL OF APPLIED PHYSICS ; 77, 1 ; 11
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Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
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Publication date:1995-01-01
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Size:11 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:Unknown
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Table of contents – Volume 77, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Theoretical analysis of birefringence and form‐induced polarization mode dispersion in birefringent optical fibers: A full‐vectorial approachTzolov, Velko P. / Fontaine, Marie et al. | 1995
- 7
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Grating competition for charge carriers in photorefractive bismuth silicon oxideKhoury, Jehad / Cronin‐Golomb, Mark / Woods, Charles et al. | 1995
- 11
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Electric‐field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulatorHuang, Yimin / Wang, Junfu / Lien, Chenhsin et al. | 1995
- 11
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Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 mm optical modulatorHuang, Yimin et al. | 1995
- 17
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Evaluation of the characteristic dimensions for porous sound‐absorbing materialsHenry, Michel / Lemarinier, Pavel / Allard, Jean F. / Bonardet, Jean L. / Gedeon, Antoine et al. | 1995
- 21
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Epitaxial growth of Sb/GaSb structures: An example of V/III‐V heteroepitaxyDura, J. A. / Vigliante, A. / Golding, T. D. / Moss, S. C. et al. | 1995
- 28
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New potentiometry method in scanning tunneling microscopy: Exploiting the correlation of fluctuationsKoslowski, B. / Baur, C. et al. | 1995
- 34
-
Anomalous x‐ray diffuse scattering of short‐range order in Nd2−xCexCuO4−yKan, X. B. / Renevier, H. / Quintana, J. / Peng, J. L. / Cohen, J. B. et al. | 1995
- 41
-
Annealing behavior of carbon‐oxygen complexes in silicon crystals observed by low‐temperature infrared absorptionShirakawa, Yoshimi / Yamada‐Kaneta, Hiroshi / Mori, Haruhisa et al. | 1995
- 47
-
Transmission electron microscopy study of microstructure and [112¯0]//[001] polycrystalline epitaxy of CoNiCr/Cr bilayer filmsTang, Li / Lu, Dong / Thomas, Gareth et al. | 1995
- 54
-
Fluorine‐induced suppression of disorder effects of carbon in the hydrogenated amorphous silicon‐carbon alloy thin filmsBhusari, D. M. / Kumbhar, A. S. / Kshirsagar, S. T. et al. | 1995
- 62
-
Extended x‐ray‐absorption fine‐structure study of InAs/InP and GaAs/InP strained heterostructuresProietti, M. G. / Turchini, S. / Martelli, F. / Garcia, J. / Prosperi, T. et al. | 1995
- 66
-
Two‐region model for hydrogen trapping in and release from graphiteHaasz, A. A. / Franzen, P. / Davis, J. W. / Chiu, S. / Pitcher, C. S. et al. | 1995
- 87
-
Ion damage buildup and amorphization processes in AlxGa1−xAsTan, H. H. / Jagadish, C. / Williams, J. S. / Zou, J. / Cockayne, D. J. H. / Sikorski, A. et al. | 1995
- 95
-
High‐resolution transmission electron microscopy study of solid phase crystallized silicon thin films on SiO2: Crystal growth and defects formationKim, J. H. / Lee, J. Y. / Nam, K. S. et al. | 1995
- 103
-
Nucleation of dislocation loops in strained epitaxial layersJain, Uma / Jain, S. C. / Harker, A. H. / Bullough, R. et al. | 1995
- 110
-
Impression and diffusional creep of anisotropic mediaYang, Fuqian / Li, J. C. M. et al. | 1995
- 118
-
Detection of residual defects in silicon doped by neutron transmutationHartung, Joachim / Weber, Jo¨rg et al. | 1995
- 122
-
Observation of phase transitions in an antiferroelectric liquid crystal investigated by scanning tunneling microscopyJandt, K. D. / Tixier, S. / Towler, M. J. / Blackmore, J. M. / Miles, M. J. et al. | 1995
- 127
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Thermal and diffusion‐induced stresses in crystalline solidsBelova, I. V. / Murch, G. E. et al. | 1995
- 135
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Simulation of transformations of thin metal films heated by nanosecond laser pulsesBalandin, V. Yu. / Niedrig, R. / Bostanjoglo, O. et al. | 1995
- 143
-
Lattice accommodation in heteroepitaxial semiconductor layers grown beyond critical thicknessTabuchi, M. / Kumamoto, T. / Takeda, Y. et al. | 1995
- 146
-
Ion‐beam doping of GaAs with low‐energy (100 eV) C+ using combined ion‐beam and molecular‐beam epitaxyIida, Tsutomu / Makita, Yunosuke / Kimura, Shinji / Winter, Stefan / Yamada, Akimasa / Fons, Paul / Uekusa, Shin‐ichiro et al. | 1995
- 153
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Structure, chemistry, and growth mechanisms of photovoltaic quality thin‐film Cu(In,Ga)Se2 grown from a mixed‐phase precursorTuttle, J. R. / Contreras, M. / Bode, M. H. / Niles, D. / Albin, D. S / Matson, R. / Gabor, A. M. / Tennant, A. / Duda, A. / Noufi, R. et al. | 1995
- 162
-
Interface structure modified by plasma‐surface interaction and its effect on ablative hole opening process in a bilayer system of TeSeF film and a fluorocarbon subbing layerHorie, M. / Tamura, T. et al. | 1995
- 167
-
Precise determination of the periodicity for Mo/Si and W/C metallic multilayers by electron and x‐ray diffractionJiang, S. S. / Zou, J. / Cockayne, D. J. H. / Hu, A. / Sikorski, A. et al. | 1995
- 172
-
Determination of alloy composition in modulation doped AlxGa1−xAs/GaAs heterostructureWang, D. P. / Lo, Ikai / Chern, J. L. / Mitchel, W. C. et al. | 1995
- 175
-
Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structuresDevine, R. A. B. / Warren, W. L. / Xu, J. B. / Wilson, I. H. / Paillet, P. / Leray, J.‐L. et al. | 1995
- 187
-
Lateral junctions of molecular beam epitaxial grown Si‐doped GaAs and AlGaAs on patterned substratesTakamori, Takeshi / Kamijoh, Takeshi et al. | 1995
- 192
-
Analysis of two‐step‐growth conditions for GaN on an AlN buffer layerSasaki, T. / Matsuoka, T. et al. | 1995
- 201
-
Growth of abrupt InGaAs(P)/In(GaAs)P heterointerfaces by gas source molecular beam epitaxyShiau, Guang‐Jye / Chao, Chih‐Ping / Burrows, Paul E. / Forrest, Stephen R. et al. | 1995
- 210
-
Deep‐level transient spectroscopy study in gettered liquid phase epitaxy grown In0.53Ga0.47AsPal, D. / Bose, D. N. et al. | 1995
- 213
-
Detection of defects at homoepitaxial interface by deep‐level transient spectroscopyLu, Fang / Gong, Dawei / Sun, Henghui / Wang, Xun et al. | 1995
- 218
-
Optical parametric amplification in the magnetoplasma in semiconductorsIida, Takashi / Mizushima, Yoshihiko et al. | 1995
- 225
-
Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave‐vector‐dependent numerical transition rate formulation within an ensemble Monte Carlo calculationOg˘uzman, I˙smail H. / Wang, Yang / Kolni´k, Ja´n / Brennan, Kevin F. et al. | 1995
- 233
-
Modeling of optical and electrical behavior of semiconducting thin films: Application to sprayed CdS on transparent substratesEbothe, Jean et al. | 1995
- 240
-
Admittance spectroscopy of InAlAs/InGaAs single‐quantum‐well structure with high concentration of electron traps in InAlAs layersBrounkov, P. N. / Benyattou, T. / Guillot, G. / Clark, S. A. et al. | 1995
- 244
-
Determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurementsGoren, D. / Nemirovsky, Y. et al. | 1995
- 252
-
Thin‐film composite mixtures of YBa2Cu3O7−δ and Y2O3Broussard, P. R. / Cestone, V. C. / Allen, L. H. et al. | 1995
- 252
-
Thin-film composite mixtures of YBa2Cu3O87-delta) and Y2O3Broussard, P.R. / Cestone, V.C. / Allen, L.H. et al. | 1995
- 252
-
Thin-film composite mixtures of YBa2Cu3O7 - d) and Y2O3Broussard, P.R. et al. | 1995
- 257
-
rf surface resistance measurements of binary and ternary niobium compoundsGemme, G. / Fabbricatore, P. / Musenich, R. / Parodi, R. / Rossi, T. / Viviani, M. / Zhang, B. et al. | 1995
- 265
-
Overwrite repeatability of magneto‐optical exchange‐coupled multilayerMiyamoto, Harukazu / Andoo, Keikichi / Niihara, Toshio / Ojima, Masahiro et al. | 1995
- 270
-
Site‐selective spectroscopy and crystal‐field analysis for Nd3+ in strontium fluorovanadatePeale, R. E. / Summers, P. L. / Weidner, H. / Chai, B. H. T. / Morrison, C. A. et al. | 1995
- 277
-
Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearitiesKlann, Robert / Ho¨fer, Thomas / Buhleier, Rainer / Elsaesser, Thomas / Tomm, Jens W. et al. | 1995
- 287
-
Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol‐gel processMathieu, H. / Richard, T. / Alle`gre, J. / Lefebvre, P. / Arnaud, G. / Granier, W. / Boudes, L. / Marc, J. L. / Pradel, A. / Ribes, M. et al. | 1995
- 294
-
Spectroscopic characteristics of Nd3+‐doped strontium fluorovanadate and their relationship to laser performanceHong, P. / Zhang, X. X. / Peale, R. E. / Weidner, H. / Bass, M. / Chai, B. H. T. et al. | 1995
- 301
-
Optical and electrical investigation of semiconducting amorphous Si:P alloy thin filmsLi, X.‐H. / Carlsson, J. R. A. / Gong, S. F. / Hentzell, H. T. G. / Liedberg, B. et al. | 1995
- 308
-
Time evolution of grating decay during photorefractive fixing processes in LiNbO3Mu¨ller, R. / Arizmendi, L. / Carrascosa, M. / Cabrera, J. M. et al. | 1995
- 313
-
Analysis of infrared attenuated total reflection spectra from thin SiO2 films on SiBjorkman, C. H. / Yamazaki, T. / Miyazaki, S. / Hirose, M. et al. | 1995
- 318
-
Hole capture by D‐center defects in 6H‐silicon carbideSaddow, Stephen E. / Tipton, C. Wesley / Mazzola, Michael S. et al. | 1995
- 323
-
Excitation dynamics of luminescence from porous siliconVentura, P. J. / do Carmo, M. C. / O’Donnell, K. P. et al. | 1995
- 327
-
Acousto‐optic modulation in diffusive semiconductorsNeogi, A. et al. | 1995
- 334
-
Free volume and ionic conductivity of poly(ether urethane)‐LiClO4 polymeric electrolyte studied by positron annihilationPeng, Z. L. / Wang, B. / Li, S. Q. / Wang, S. J. et al. | 1995
- 334
-
Free volume and ionic conductivity of poly(ether urethane)-LiClO(sub 4) polymeric electrolyte studied by positron annihilationPeng, Z.L. et al. | 1995
- 339
-
Optical properties of (113) GaAs/AlAs superlattices grown by molecular beam epitaxy and atomic layer molecular beam epitaxyBacquet, G. / Hassen, F. / Lauret, N. / Armelles, G. / Dominguez, P. S. / Gonzalez, L. et al. | 1995
- 343
-
Studies of binding energies of various components in bismuth‐based cuprate superconductors through secondary ion mass spectrometry and x‐ray photoelectron spectroscopyRajasekar, P. / Ray, N. / Dey, S. D. / Bandyopadhyay, S. K. / Barat, P. / Sen, Pintu / Chakraborty, P. / Caccavale, F. / Bertoncello, R. et al. | 1995
- 350
-
Efficient dry etching of Si with vacuum ultraviolet light and XeF2 in a buffer gasLi, B. / Streller, U. / Krause, H.‐P. / Twesten, I. / Schwentner, N. et al. | 1995
- 357
-
Structure and grain boundary defects of glow‐discharge polycrystalline silicon films deposited using disilaneHasegawa, S. / Fujimoto, E. / Inokuma, T. / Kurata, Y. et al. | 1995
- 367
-
Photoablation: Schottky barriers on patterned Si surfacesGrebel, H. / Fang, K. J. et al. | 1995
- 367
-
Photoablation: Schottky barriers in patterned Si surfacesGrebel, H. / Fang, K.J. et al. | 1995
- 371
-
In situ gettering of edge‐defined film‐fed growth silicon in a CO ambientBalster, S. G. / Schroder, D. K. / Bailey, J. / Kalejs, J. P. et al. | 1995
- 378
-
Characterizing, modeling, and optimizing high‐Tc superconducting quantum interference devicesFoglietti, V. / Koch, R. H. / Sun, J. Z. / Laibowitz, R. B. / Gallagher, W. J. et al. | 1995
- 378
-
Characterizing, modeling, and optimizing high-Tc cuperconducting quantum interference devicesFoglietti, V. / Koch, R.H. / Sun, J.Z. / Laibowitz, R.B. / Gallagher, W.J. et al. | 1995
- 382
-
Effect of inductance in externally shunted Josephson tunnel junctionsWhan, C. B. / Lobb, C. J. / Forrester, M. G. et al. | 1995
- 390
-
Large Schottky barriers formed on epitaxial InGaP grown on GaAsShiojima, Kenji / Nishimura, Kazumi / Aoki, Tatsuo / Hyuga, Fumiaki et al. | 1995
- 393
-
Simple computation using Coulomb blockade‐based tunneling arraysAncona, M. G. / Rendell, R. W. et al. | 1995
- 396
-
Cathodoluminescence studies of exciton localization in GaAs‐AlGaAs single quantum wellsJahn, U. / Fujiwara, K. / Menniger, J. / Grahn, H. T. et al. | 1995
- 399
-
Long pulse electron beam pumped molecular F*2 laserLankhorst, F. T. J. L. / Bastiaens, H. M. J. / Botma, H. / Peters, P. J. M. / Witteman, W. J. et al. | 1995
- 402
-
Electrical and optical properties of undoped InP grown at low temperature by atomic layer molecular beam epitaxyPostigo, P. A. / Dotor, M. L. / Huertas, P. / Golmayo, D. / Briones, F. et al. | 1995
- 402
-
Electrical and optical properties of undoped InP grown at low temperatures by atomic layer molecular beam epitaxyPostigo, P.A. / Dotor, M.L. / Huertas, P. / Golmayo, D. / Briones, F. et al. | 1995
- 405
-
Two‐dimensional electron gas mobility anomalies (and enhancement) in pseudomorphic AlGaAs/InGaAs/GaAs heterostructuresLitwin‐Staszewska, E. / Suski, T. / Skierbiszewski, C. / Kobbi, F. / Robert, J. L. / Mosser, V. et al. | 1995
- 408
-
Nuclear magnetic resonance study of proton exchanged LiNbO3de Souza, Ricardo E. / Engelsberg, M. / Pacobahyba, L. H. / do Nascimento, George C. et al. | 1995
- 411
-
Calculation of semiconductor intrinsic properties using a nonparabolic three‐band modelAriel, V. / Schacham, S. E. / Bahir, G. et al. | 1995
- 414
-
Normal zone propagation in Rutherford‐type superconducting cablesKovner, V. S. / Mints, R. G. et al. | 1995
- 417
-
Effect of fluorine on boron diffusion in thin silicon dioxides and oxynitrideAoyama, Takayuki / Suzuki, Kunihiro / Tashiro, Hiroko / Toda, Yoko / Yamazaki, Tatsuya / Takasaki, Kanetake / Ito, Takashi et al. | 1995
- 420
-
Lattice relaxation of AlGaAs layers grown on GaAs(100) substrate plane by organometallic vapor phase epitaxyFuke, Shunro / Sano, Kazutoshi / Kuwahara, Kazuhiro / Takano, Yasushi / Sato, Masahiro / Imai, Tetsuji et al. | 1995
- 423
-
Origin of unknown x‐ray diffraction peaks from incommensurate superlatticesKim, S. K. / Chang, C. H. / Lee, Y. P. / Koo, Y. M. et al. | 1995
- 426
-
Competition between two resonance frequency branches in a waveguide free‐electron laserShu, X. J. / Kawamura, Y. / Tanabe, T. / Li, D. J. / Toyoda, K. et al. | 1995
- 429
-
Polarization dynamics of free carriers in CdSxSe1−x crystalsDaunois, A. / Merle, J.‐C. / Bigot, J.‐Y. et al. | 1995
- 432
-
Properties of Czochralski‐grown RAIO3 (R: Dy, Ho, and Er) single crystals for magnetic refrigerationKimura, H. / Numazawa, T. / Sato, M. / Ikeya, T. / Fukuda, T. et al. | 1995
- 432
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Properties of Czochralski-grown RAlO3 (R: Dy, Ho, and Er) single crystals for magnetic refrigerationKimura, H. et al. | 1995
- 435
-
Electron‐paramagnetic‐resonance spectra in as‐grown CdGeAs2Halliburton, L. E. / Edwards, G. J. / Schunemann, P. G. / Pollak, T. M. et al. | 1995
- 438
-
Composition dependence of microwave properties of Y‐Ba‐Cu‐O thin films grown by metal‐organic chemical‐vapor depositionWaffenschmidt, E. / Sjamsudin, G. / Musolf, J. / Arndt, F. / He, X. / Heuken, M. / Heime, K. et al. | 1995
- 441
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Experimental study on stacked Josephson tunnel junction arrays under microwave irradiationKlushin, A. M. / Kohlstedt, H. et al. | 1995
- 444
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"Optical properties of bulk Al~xGa~1~-~xAs" [J. Appl. Phys. 74, 6341 (1993)]Lin, C.-H. / Meese, J. M. et al. | 1995
- 444
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Erratum: ‘‘Optical properties of bulk AlxGa1−xAs’’ [J. Appl. Phys. 74, 6341 (1993)]Lin, Chih‐Hsiang / Meese, Jon M. et al. | 1995
- 445
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CUMULATIVE AUTHOR INDEX| 1995
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EDITORIAL| 1995
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INFORMATION FOR CONTRIBUTORS| 1995