Heteroepitaxial growth of C~7~0 films on MoS~2(0001) and their characterization by low energy electron diffraction and photoelectron spectroscopy (Unknown)
- New search for: Han, B.-Y.
- New search for: Hevesi, K.
- New search for: Yu, L.-M.
- New search for: Gensterblum, G.
- New search for: Han, B.-Y.
- New search for: Hevesi, K.
- New search for: Yu, L.-M.
- New search for: Gensterblum, G.
In:
41st National Symposium of the American Vacuum Society, Part I
3//pt1
;
1036
;
1995
-
ISSN:
- Article (Journal) / Print
-
Title:Heteroepitaxial growth of C~7~0 films on MoS~2(0001) and their characterization by low energy electron diffraction and photoelectron spectroscopy
-
Contributors:
-
Published in:41st National Symposium of the American Vacuum Society, Part I , 3//pt1 ; 1036JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A VACUUMS SURFACES AND FILMS ; 13, 3//pt1 ; 1036
-
Publisher:
- New search for: SLACK INCORPORATED
-
Publication date:1995-01-01
-
Size:1036 pages
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ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:Unknown
- New search for: 621.55
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Classification:
DDC: 621.55 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 13, Issue 3//pt1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 503
-
Vacuum gauging with complementary metal-oxide-semiconductor microsensorsPaul, O. / Brand, O. / Lenggenhager, R. / Baltes, H. et al. | 1995
- 509
-
Optical method for low pressure measurementsBello, I. / Bederka, S. / Haworth, L. et al. | 1995
- 515
-
Surface analysis of carbon on ozone treated metalsMomose, T. / Maeda, Y. / Asano, K. / Ishimaru, H. et al. | 1995
- 520
-
Outgassing reduction of type 304 stainless steel by surface oxidation in airOdaka, K. / Ueda, S. et al. | 1995
- 524
-
Enhancement of hydrogen pumping by injecting fluorine into the exhaust system of turbomolecular pumpsOgure, N. / Shibata, A. / Ono, K. / Hayasaka, N. et al. | 1995
- 531
-
Pumping behavior of ion pump elements at high and misaligned magnetic fieldsHseuh, H. C. / Jiang, W. S. / Mapes, M. et al. | 1995
- 536
-
Modeling of a multistage claw rotor vacuum pumpIoffe, I. V. / Koss, V. A. / Gray, M. / Livesey, R. G. et al. | 1995
- 540
-
Vacuum characteristics of titaniumMinato, M. / Itoh, Y. et al. | 1995
- 545
-
Recombination limited outgassing of stainless steelMoore, B. C. et al. | 1995
- 549
-
Theoretical submonolayer adsorption isotherms for hydrogen on a heterogeneous surfaceHobson, J. P. et al. | 1995
- 551
-
Pumping characteristics of a cryopump with Ar sorbent in He and in a D~2/He mixtureMenon, M. M. / Laughon, G. J. / Maingi, R. / Wade, M. R. et al. | 1995
- 556
-
TiN thin film on stainless steel for extremely high vacuum materialSaito, K. / Inayoshi, S. / Ikeda, Y. / Yang, Y. et al. | 1995
- 562
-
Secondary ion mass spectroscopy analysis for aluminum surfaces treated by glow discharge cleaningChen, J. R. / Hsiung, G. Y. / Liu, Y. C. / Lee, W. H. et al. | 1995
- 571
-
Reduction of outgassing rate by glow discharge cleaningLi, M. / Dylla, H. F. et al. | 1995
- 576
-
X-ray photoelectron spectroscopy analysis of cleaning procedures for synchrotron radiation beamline materials at the Advanced Photon SourceLi, Y. / Ryding, D. / Liu, C. / Kuzay, T. M. et al. | 1995
- 581
-
Photon stimulated desorption measurements of extruded copper and of welded copper beam chambers for the PEP-II asymmetric B factoryFoerster, C. L. / Lanni, C. / Perkins, C. / Calderon, M. et al. | 1995
- 585
-
Photodesorption from a copper chamber with a broached inner surfaceKobari, T. / Matumoto, M. / Hirano, N. / Katane, M. et al. | 1995
- 590
-
Chemical vapor deposited TiCN: A new barrier metallization for submicron via and contact applicationsEizenberg, M. / Littau, K. / Ghanayem, S. / Liao, M. et al. | 1995
- 596
-
Plasma enhanced chemical vapor deposition of TiO~2 in microwave-radio frequency hybrid plasma reactorLee, Y. H. / Chan, K. K. / Brady, M. J. et al. | 1995
- 602
-
Interface characterization of an InP/InGaAs resonant tunneling diode by scanning tunneling microscopyWu, W. / Skala, S. L. / Tucker, J. R. / Lyding, J. W. et al. | 1995
- 607
-
Fourier transform infrared study of rapid thermal annealing of a-Si:N:H(D) films prepared by remote plasma-enhanced chemical vapor depositionLu, Z. / Santos-Filho, P. / Stevens, G. / Williams, M. J. et al. | 1995
- 614
-
Electrical transport properties of hot electrons at metal, insulator, and semiconductor interfacesLudeke, R. / Bauer, A. et al. | 1995
- 623
-
Epitaxial growth of a metal(CoSi~2)/insulator(CaF~2) nanometer-thick heterostructure and its application to quantum-effect devicesAsada, M. / Watanabe, M. / Suemasu, T. / Kohno, Y. et al. | 1995
- 629
-
Optical waveguides on silicon chipsYokoyama, S. / Nagata, T. / Kuroda, Y. / Doi, T. et al. | 1995
- 636
-
Si~1~-~xGe~x/Si multiple quantum wells on Si(100) and Si(110) for infrared absorptionKreifels, T. L. / Hengehold, R. L. / Yeo, Y. K. / Thompson, P. E. et al. | 1995
- 642
-
Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasersHobson, W. S. / Ren, F. / Mohideen, U. / Slusher, R. E. et al. | 1995
- 646
-
Correlation of surface morphology with chemical structures of sulfur-passivated GaAs(100) investigated by scanning tunneling microscopy and x-ray photoelectron spectroscopyJeong Sook Ha / Park, S.-J. / Kim, S.-B. / Lee, E.-H. et al. | 1995
- 652
-
Sulfide-assisted reordering at the InP surface and SiN~x/InP interfaceKwok, R. W. M. / Jin, G. / So, B. K. L. / Hui, K. C. et al. | 1995
- 658
-
Sputter deposition of yttria-stabilized zirconia onto a porous Au substrateJankowski, A. F. / Hayes, J. P. et al. | 1995
- 662
-
Sb ion implantation and annealing of SiGeC heteroepitaxial layers on Si(001)Garcia, R. / Daley, K. E. / Sego, S. / Culbertson, R. J. et al. | 1995
- 666
-
Zincblende-CdSe on GaSb(110): Characterization of epitaxial growth and electronic structureNeuhold, G. / Horn, K. / Magnusson, K. O. / Evans, D. A. et al. | 1995
- 672
-
Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor depositionHwang, C.-Y. / Schurman, M. J. / Mayo, W. E. / Li, Y. et al. | 1995
- 676
-
Conformality of SiO~2 films from tetraethoxysilane-sourced remote microwave plasma-enhanced chemical vapor depositionRaupp, G. B. / Levedakis, D. A. / Cale, T. S. et al. | 1995
- 681
-
Molecular beam epitaxy growth and characterizations of (Zn,Mg)(S,Se) epilayers for II-VI blue/green laser diodesGrillo, D. C. / Ringle, M. D. / Hua, G. C. / Han, J. et al. | 1995
- 683
-
Molecular beam epitaxial growth of ZnMgSSe and its application to blue and green laser diodesIkeda, M. / Ishibashi, A. / Mori, Y. et al. | 1995
- 690
-
Deep levels near "buried" ZnSe/GaAs(100) heterointerfacesRaisanen, A. / Brillson, L. J. / Vanzetti, L. / Sorba, L. et al. | 1995
- 696
-
Heteroepitaxy of lattice-matched compound semiconductors on siliconBachmann, K. J. / Dietz, N. / Miller, A. E. / Venables, D. et al. | 1995
- 705
-
InGaN/AlGaN blue-light-emitting diodesNakamura, S. et al. | 1995
- 711
-
Deposition of AlN at lower temperatures by atmospheric metalorganic chemical vapor deposition using dimethylethylamine alane and ammoniaKidder, J. N. / Kuo, J. S. / Ludviksson, A. / Pearsall, T. P. et al. | 1995
- 716
-
Growth of In~xGa~1~-~xN and In~xAl~1~-~xN on GaAs metalorganic molecular beam epitaxyAbernathy, C. R. / MacKenzie, J. D. / Bharatan, S. R. / Jones, K. S. et al. | 1995
- 719
-
Outdiffusion of deuterium from GaN, AlN, and InNWilson, R. G. / Pearton, S. J. / Abernathy, C. R. / Zavada, J. M. et al. | 1995
- 724
-
Magnetron reactive ion etching of AlN and InN in BCl~3 plasmasMcLane, G. F. / Casas, L. / Lareau, R. T. / Eckart, D. W. et al. | 1995
- 727
-
Ellipsometry for III-V epitaxial growth diagnosticsMaracas, G. N. / Kuo, C. H. / Anand, S. / Droopad, R. et al. | 1995
- 733
-
Real-time monitoring of resonant-tunneling diode growth using spectroscopic ellipsometryCelii, F. G. / Kao, Y.-C. / Katz, A. J. / Moise, T. S. et al. | 1995
- 740
-
Real-time spectroscopic ellipsometry monitoring of Si~1~-~xGe~x/Si epitaxial growthPickering, C. / Hope, D. A. O. / Carline, R. T. / Robbins, D. J. et al. | 1995
- 745
-
Observation of surface symmetry for Si/XeF~2 and Si/Cl~2 system using second-harmonic generationHaraichi, S. / Sasaki, F. / Kobayashi, S. / Komuro, M. et al. | 1995
- 750
-
Effect of hydrogen annealing on second-harmonic generation from SiO~2/Si(111) interfacesHirayama, H. / Ito, F. / Watanabe, K. et al. | 1995
- 753
-
Nanoscale structures in III-V semiconductors using sidewall masking and high ion density dry etchingRen, F. / Pearton, S. J. / Abernathy, C. R. / Lothian, J. R. et al. | 1995
- 758
-
Low resistivity ohmic contacts to moderately doped n-GaAs with low-temperature processingLovejoy, M. L. / Howard, A. J. / Zavadil, K. R. / Rieger, D. J. et al. | 1995
- 763
-
Sensor for measuring the atomic fraction in highly dissociated hydrogenGardner, W. L. et al. | 1995
- 767
-
Oxidation and 6H-SiC-SiO~2 interfacesHornetz, B. / Michel, H.-J. / Halbritter, J. et al. | 1995
- 772
-
Evolution of atomic-scale roughening on Si(001)-(2x1) surfaces resulting from high temperature oxidationSeiple, J. V. / Pelz, J. P. et al. | 1995
- 777
-
Atomically resolved scanning tunneling microscopy study of the adsorption and dissociation of methylchloride on Si(001)Bronikowski, M. J. / Hamers, R. J. et al. | 1995
- 782
-
Roughness in Si~1~-~xGe~x/Si superlattices: Growth temperature dependenceHeadrick, R. L. / Baribeau, J.-M. et al. | 1995
- 787
-
Buffer layer-modulation-doped field-effect-transistor interactions in the Al~0~.~3~3Ga~0~.~6~7As/GaAs superlattice systemPellegrino, J. G. / Richter, C. A. / Dura, J. A. / Amirtharaj, P. M. et al. | 1995
- 792
-
Interfacial properties of metal-insulator-semiconductor capacitors on GaAs(110)Huang, L. J. / Rajesh, K. / Lau, W. M. / Ingrey, S. et al. | 1995
- 797
-
The correlation between selective oxide etching and thermodynamic predictionMcNevin, S. C. et al. | 1995
- 801
-
High rate and highly selective SiO~2 etching employing inductively coupled plasma and discussion on reaction kineticsHoriike, Y. / Kubota, K. / Shindo, H. / Fukasawa, T. et al. | 1995
- 810
-
Tungsten etching using an electron cyclotron resonance plasmaMaruyama, T. / Fujiwara, N. / Shiozawa, K. / Yoneda, M. et al. | 1995
- 815
-
Application of electron cyclotron resonance plasma source to conductive film depositionShimada, M. / Ono, T. / Nishimura, H. / Matsuo, S. et al. | 1995
- 820
-
Plasma-enhanced chemical vapor deposition of silicon, germanium, and tin nitride thin films from metalorganic precursorsHoffman, D. M. / Sri Prakash Rangarajan / Athavale, S. D. / Economou, D. J. et al. | 1995
- 826
-
Analysis of the oxygen contamination present in SiN~x films deposited by electron cyclotron resonanceGarcia, S. / Martin, J. M. / Fernandez, M. / Martil, I. et al. | 1995
- 831
-
Synergistic sputtering effects during ion bombardment with two ion speciesBerg, S. / Katardjiev, I. V. et al. | 1995
- 834
-
High-aspect-ratio Si etching for microsensor fabricationJuan, W. H. / Pang, S. W. et al. | 1995
- 839
-
Composition of the oxygen plasmas from two inductively coupled sourcesTuszewski, M. / Scheuer, J. T. / Tobin, J. A. et al. | 1995
- 843
-
Radio frequency hollow cathode discharge for large-area double-sided foil processingKorzec, D. / Schott, M. / Engemann, J. et al. | 1995
- 849
-
High density, low temperature dry etching in GaAs and InP device technologyPearton, S. J. / Abernathy, C. R. / Ren, F. et al. | 1995
- 853
-
Substrate bias effects in high-aspect-ratio SiO~2 contact etching using an inductively coupled plasma reactorWesterheim, A. C. / Labun, A. H. / Dubash, J. H. / Arnold, J. C. et al. | 1995
- 859
-
The effect of the presheath on the ion angular distribution at the wafer surfaceZheng, J. / Brinkmann, R. P. / McVittie, J. P. et al. | 1995
- 865
-
Ponderomotive effects in helicon plasmasBrown, R. D. / Gilland, J. H. / Hershkowitz, N. / Breun, R. A. et al. | 1995
- 871
-
Large area radio frequency plasma for microelectronics processingYu, Z. / Shaw, D. / Gonzales, P. / Collins, G. J. et al. | 1995
- 875
-
Large volume electron cyclotron resonance plasma generation by use of the slotted antenna microwave sourceEngemann, J. / Schott, M. / Werner, F. / Korzec, D. et al. | 1995
- 883
-
Performance and modeling of a permanent magnet electron cyclotron resonance plasma sourceSaproo, A. / Mantei, T. D. et al. | 1995
- 887
-
Diagnostics and control of radicals in an inductively coupled etching reactorSugai, H. / Nakamura, K. / Hikosaka, Y. / Nakamura, M. et al. | 1995
- 894
-
Monitoring InP and GaAs etched in Cl~2/Ar using optical emission spectroscopy and mass spectrometryThomas, S. / Ko, K. K. / Pang, S. W. et al. | 1995
- 900
-
Effect of plasma overetch of polysilicon on gate oxide damageGabriel, C. T. / McVittie, J. P. et al. | 1995
- 905
-
Plasma-induced gate-oxide charging issues for sub-0.5 m complementary metal-oxide-semiconductor technologiesStamper, A. K. / Lasky, J. B. / Adkisson, J. W. et al. | 1995
- 912
-
Plasma-induced damage of GaAs during etching of refractory metal contactsShul, R. J. / Lovejoy, M. L. / Baca, A. G. / Zolper, J. C. et al. | 1995
- 918
-
Spatiotemporal powder formation and trapping in radio frequency silane plasmas using two-dimensional polarization-sensitive laser scatteringDorier, J.-L. / Hollenstein, C. / Howling, A. A. et al. | 1995
- 927
-
Dynamics of particulates in the afterglow of a radio frequency excited plasmaYeon, C.-K. / Kim, J.-H. / Whang, K.-W. et al. | 1995
- 931
-
Reactive ion etching-induced damage in GaAs/AlGaAs quantum well structures and recovery by rapid thermal annealing and hydrogen passivationYoo, B.-S. / Park, S.-J. / Park, K.-H. et al. | 1995
- 935
-
Ion and neutral argon temperatures in electron cyclotron resonance plasmas by Doppler broadened emission spectroscopyTsu, D. V. / Young, R. T. / Ovshinsky, S. R. / Klepper, C. C. et al. | 1995
- 943
-
Identification of plasma induced failure modes in the development of a bipolar-complementary metal-oxide-semiconductor processHackenberg, J. J. / Dion, M. J. / Hemmenway, D. F. / Pearce, L. G. et al. | 1995
- 948
-
Preparation of germanium doped plasma polymerized coatings as inertial confinement fusion target ablatorsBrusasco, R. / Saculla, M. / Cook, R. et al. | 1995
- 952
-
Development of neutral-beam-assisted etcherYunogami, T. / Yokogawa, K. / Mizutani, T. et al. | 1995
- 959
-
Hyperthermal neutral beam etchingGiapis, K. P. / Moore, T. A. / Minton, T. K. et al. | 1995
- 966
-
Molecular dynamics simulation of atomic layer etching of siliconAthavale, S. D. / Economou, D. J. et al. | 1995
- 972
-
Defect production and recombination during low-energy ion processingKellerman, B. K. / Floro, J. A. / Chason, E. / Brice, D. K. et al. | 1995
- 979
-
Precision shell characterization using radial averaging of x-ray imagesStephens, R. B. et al. | 1995
- 983
-
The design, performance, and application of an atomic force microscope-based profilometerMcEachern, R. L. / Moore, C. E. / Wallace, R. J. et al. | 1995
- 990
-
Thin film sensors for automobilesTaga, Y. et al. | 1995
- 996
-
Increasing the selectivity of commercially available tin oxide based gas sensors for monitoring combustible gases in process environmentsHawk, R. M. / Narayanaswamy, A. et al. | 1995
- 1001
-
Piezoelectric tactile integrated circuit sensorKolesar, E. S. / Dyson, C. S. et al. | 1995
- 1008
-
Composition and morphology of a MgF~2/Al multilayer thin film reflective coatingWeimer, J. J. / Kim, J. / Zukic, M. / Torr, D. G. et al. | 1995
- 1013
-
Production and characterization of multilayer KCl:LiF thin films on glassSomma, F. / Ercoli, A. / Santucci, S. / Lozzi, L. et al. | 1995
- 1017
-
Smart thin film TiNi/piezoelectric heterostructuresMercado, P. G. / Jardine, A. P. et al. | 1995
- 1022
-
Microstructures of sputtered PbTiO~3 thin filmsSatoh, T. / Wasa, K. / Tabata, K. / Adachi, H. et al. | 1995
- 1027
-
A novel technique for characterizing the surface coverage of thin-film chemical vapor deposition in ultra-high-aspect-ratio microstructuresSoave, R. J. / Tasker, G. W. / Then, A. M. / Mayer, J. W. et al. | 1995
- 1032
-
Fabrication of thin films with highly porous microstructuresRobbie, K. / Friedrich, L. J. / Dew, S. K. / Smy, T. et al. | 1995
- 1036
-
Heteroepitaxial growth of C~7~0 films on MoS~2(0001) and their characterization by low energy electron diffraction and photoelectron spectroscopyHan, B.-Y. / Hevesi, K. / Yu, L.-M. / Gensterblum, G. et al. | 1995
- 1040
-
Magnetic, microstructural, and compositional characterization of Fe-N thin films for recording sensor applicationsKim, Y. K. / Narayan, P. B. et al. | 1995
- 1044
-
Positron annihilation studies of diamondlike nanocomposite filmsAsoka-Kumar, P. / Dorfman, B. F. / Abraizov, M. G. / Yan, D. et al. | 1995
- 1048
-
Calculation of the figure of merit for indium tin oxide films based on basic theoryKnickerbocker, S. A. / Kulkarni, A. K. et al. | 1995
- 1053
-
Low temperature formation of textured ZnO transparent electrodes by magnetron sputteringMinami, T. / Sonohara, H. / Takata, S. / Fukuda, I. et al. | 1995
- 1058
-
Vacuum conditions for sputtering thin film TiNlJardine, A. P. et al. | 1995
- 1063
-
Ionized magnetron sputter deposition of amorphous carbon nitride thin filmsLi, D. / Lopez, S. / Chung, Y. W. / Wong, M. S. et al. | 1995
- 1067
-
Residual stress in metal ion implanted titanium nitride films studied by glancing incidence x-ray diffractionPerry, A. J. / Treglio, J. R. / Valvoda, V. / Rafaja, D. et al. | 1995
- 1073
-
Sputter deposition of cermet fuel electrodes for solid oxide fuel cellsTsai, T. / Barnett, S. A. et al. | 1995
- 1078
-
Morphology of precursors and CuIn~1~-~xGa~xSe~2 thin films prepared by a two-stage selenization processDhere, N. G. / Kuttath, S. / Moutinho, H. R. et al. | 1995
- 1083
-
Growth of chalcopyrite Cu(In,Ga)Se~2/CuIn~3Se~5 absorbers by radio frequency sputteringHernandez-Rojas, J. L. / Martil, I. / Santamaria, J. / Gonzalez-Diaz, G. et al. | 1995
- 1088
-
Attaining a solar energy economy with active thin film structuresGoldner, R. B. et al. | 1995
- 1095
-
Properties of transparent zinc-stannate conducting films prepared by radio frequency magnetron sputteringMinami, T. / Takata, S. / Sato, H. / Sonohara, H. et al. | 1995
- 1100
-
Oxygen content of indium tin oxide films fabricated by reactive sputteringHonda, S. / Tsujimoto, A. / Watamori, M. / Oura, K. et al. | 1995
- 1104
-
Structure and composition of hydrogenated Ti~xC~y thin films prepared by reactive sputteringDelplancke, M. P. / Vassileris, V. / Winand, R. et al. | 1995
- 1111
-
Synchrotron radiation photoelectron emission microscopy of chemical-vapor-deposited diamond electron emittersShovlin, J. D. / Kordesch, M. E. / Dunham, D. / Tonner, B. P. et al. | 1995
- 1116
-
Surface spectroscopic studies of the deposition of TiN thin films from tetrakis-(dimethylamido)-titanium and ammoniaCorneille, J. S. / Chen, P. J. / Truong, C. M. / Oh, W. S. et al. | 1995
- 1121
-
Characterization of aluminum based oxide layers formed by microwave plasmaKatz-Tsameret, Z. / Raveh, A. et al. | 1995
- 1128
-
Investigation of pyroelectric characteristics of lead titanate thin films for microsensor applicationsDeb, K. K. / Bennett, K. W. / Brody, P. S. et al. | 1995
- 1133
-
ReSi~2 thin-film infrared detectorsBecker, J. P. / Mahan, J. E. / Long, R. G. et al. | 1995
- 1136
-
Surface analysis at low to ultrahigh vacuum by ion scattering and direct recoil spectroscopyHammond, M. S. / Schultz, J. A. / Krauss, A. R. et al. | 1995
- 1145
-
Spectroscopic ellipsometry of thin films on transparent substrates: A formalism for data interpretationYang, Y. H. / Abelson, J. R. et al. | 1995
- 1150
-
Optical emission spectroscopy of H~2-CO and H~2O-CH~3OH plasmas for diamond growthManukonda, R. / Dillon, R. / Furtak, T. et al. | 1995
- 1155
-
Effect of 20-95 eV Ar ion bombardment of GaAs(001): In pursuit of damage-free ion-assisted growth and etchingMillunchick, J. M. / Hultman, L. / Barnett, S. A. et al. | 1995
- 1160
-
A molecular dynamics study of transient processes during deposition on (001) metal surfacesGilmore, C. M. / Sprague, J. A. et al. | 1995
- 1165
-
Annealing study of gold films using scanning tunneling microscopyPorath, D. / Bar-Sadeh, E. / Wolovelsky, M. / Grayevsky, A. et al. | 1995
- 1171
-
Role of temporal delay in dual-laser ablated plumesWitanachchi, S. / Mukherjee, P. et al. | 1995
- 1175
-
Large-area pulsed laser deposition: Techniques and applicationsGreer, J. A. / Tabat, M. D. et al. | 1995
- 1182
-
Film deposition and surface modification using intense pulsed ion beamsMeli, C. A. / Grabowski, K. S. / Hinshelwood, D. D. / Stephanakis, S. J. et al. | 1995
- 1188
-
Reactive direct current magnetron sputtering of aluminum oxide coatingsSproul, W. D. / Graham, M. E. / Wong, M. S. / Lopez, S. et al. | 1995
- 1192
-
Simultaneous deposition and lamination process in vacuumFreeland, A. W. / Germundson, J. R. / Swisher, R. L. / Barnes, K. P. et al. | 1995
- 1196
-
Thermomechanical and chemical properties of SiC-C functionally gradient coatings on graphiteRichards, M. R. / Richards, A. C. / Taya, M. / Ohuchi, F. S. et al. | 1995
- 1202
-
Plasma-based surface engineering processes for wear and corrosion protectionMatthews, A. / Leyland, A. / Dorn, B. / Stevenson, P. R. et al. | 1995
- 1208
-
A vacuum technology for coating TiCN-based cermetsKonyashin, I. Y. et al. | 1995