Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers (English)
- New search for: Hoffmann, A.
- New search for: Wiesmann, D.
- New search for: Loa, I.
- New search for: Heitz, R.
- New search for: Pohl, U. W.
- New search for: Broser, I.
- New search for: Worschech, L.
- New search for: Kurtz, E.
- New search for: Hommel, D.
- New search for: Landwehr, G.
- New search for: Hoffmann, A.
- New search for: Wiesmann, D.
- New search for: Loa, I.
- New search for: Heitz, R.
- New search for: Pohl, U. W.
- New search for: Broser, I.
- New search for: Worschech, L.
- New search for: Kurtz, E.
- New search for: Hommel, D.
- New search for: Landwehr, G.
- New search for: Cavenett, B. C.
- New search for: Davies, J. J.
- New search for: Galbraith, I.
- New search for: Prior, K. A.
In:
II-VI Compounds and Devices
1/4
;
302-306
;
1996
-
ISSN:
- Article (Journal) / Print
-
Title:Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
-
Contributors:Hoffmann, A. ( author ) / Wiesmann, D. ( author ) / Loa, I. ( author ) / Heitz, R. ( author ) / Pohl, U. W. ( author ) / Broser, I. ( author ) / Worschech, L. ( author ) / Kurtz, E. ( author ) / Hommel, D. ( author ) / Landwehr, G. ( author )
-
Published in:II-VI Compounds and Devices , 1/4 ; 302-306JOURNAL OF CRYSTAL GROWTH ; 159, 1/4 ; 302-306
-
Publisher:
- New search for: ELSEVIER SCIENCE DIVISION
-
Publication date:1996-01-01
-
Size:5 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 548
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 548 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 159, Issue 1/4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Growth issues for blue-green laser diodesGunshor, R.L. et al. | 1996
- 11
-
Novel ZnCdSe-MgZnCdSe compound system grown on InP substrates by MBE and theoretical investigation of 550-640 nm range ZnCdSe-MgZnCdSe lasersNomura, I. et al. | 1996
- 16
-
Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloysIvanov, S.V. et al. | 1996
- 21
-
Optical, structural and lattice dynamical properties of epitaxial Zn1 - yMgySxSe1 - x layers grown by metalorganic vapour phase epitaxyHamadeh, H. et al. | 1996
- 26
-
(Cd,Zn)Se multi-quantum-well LEDs: Homoepitaxy on ZnSe substrates and heteroepitaxy on (In,Ga)As-GaAs buffer layersWenisch, H. et al. | 1996
- 32
-
A comparison of Mg and Ca for quaternary cladding layers in ZnSe based laser diodesJobst, B. et al. | 1996
- 36
-
MBE growth of ZnCdSe and MgZnCdSe alloys on InP substrates with a GaInAs buffer-layerNaniwae, K. et al. | 1996
- 41
-
Distribution of chalcogen atoms in ZnSSe and ZnMgSSe: An EXAFS studyMaruyama, T. et al. | 1996
- 45
-
Optical properties of wide bandgap ZnHgSSe layers grown by molecular beam epitaxyHara, K. et al. | 1996
- 50
-
Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devicesHutchins, J.W. et al. | 1996
- 54
-
Epitaxy of Zn1 - xMgxSeyTe1 - y on (100)InAsLitz, M.Th et al. | 1996
- 58
-
Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methodsTsen, S.-C.Y. et al. | 1996
- 64
-
Photoluminescence properties of ZnS epilayers grown by metalorganic molecular beam epitaxySummers, C.J. et al. | 1996
- 68
-
MOCVD grown CdTe investigated by photoluminescence and PACFilz, T. et al. | 1996
- 72
-
Hydrogen-arsenic interactions in MOVPE-grown CdTe: Effects of rapid thermal annealingSvob, L. et al. | 1996
- 76
-
Heteroepitaxy of CdTe on (211)Si substrates by molecular beam epitaxyMillion, A. et al. | 1996
- 81
-
Wurtzite ZnxCd1 - xS layers grown by combining MBE and hot-wall beam epitaxyHetterich, M. et al. | 1996
- 85
-
Molecular beam epitaxial growth of ZnSe(111) films on misoriented GaAs(111)A substratesMatsumura, N. et al. | 1996
- 89
-
Near band-edge emission in strained MBE-grown ZnSOzanyan, K.B. et al. | 1996
- 94
-
MnS-ZnSe on GaAs grown by molecular beam epitaxySivananthan, S. et al. | 1996
- 99
-
Strain relaxation in selectively grown ZnSe-epilayers on patterned GaAs-substratesParthier, L. et al. | 1996
- 103
-
Microprobe Raman study of the variation of LO phonon frequency with the Cd concentration in the ternary compound Zn1 - x CdxSeMeredith, W. et al. | 1996
- 108
-
High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxyLee, C.D. et al. | 1996
- 112
-
Influence of lattice relaxation on the properties of ZnSe-ZnS single quantum wells by MOVPEChang, S.K. et al. | 1996
- 117
-
MOVPE growth of zincblende magnesium sulphideKonczewicz, L. et al. | 1996
- 121
-
MOVPE growth of (100) CdZnTe layers using DiPZnYasuda, K. et al. | 1996
- 126
-
X-ray measurements of strains in MOCVD grown thin cap layers of CdTeRaizman, A. et al. | 1996
- 130
-
Growth of p-type ZnSe by metalorganic vapor phase epitaxy using ethylazide as a new nitrogen sourceInoue, K. et al. | 1996
- 134
-
Structural characterization and MOVPE growth of ZnCdSe and ZnSSe layers, quantum wells and superlatticesKastner, M.J. et al. | 1996
- 138
-
Methylallyltelluride in the MOVPE of ZnTe: Dissociation mechanisms and layer growthQu'Hen, B. et al. | 1996
- 144
-
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPELeo, G. et al. | 1996
- 148
-
Photoactive defect-related Iv luminescence line observed in ZnSe-GaAs layers grown by molecular beam epitaxyYoneta, M. et al. | 1996
- 152
-
Raman monitoring of ternary compound formation: ZnSxSe 1 - x) on GaAs(100)Drews, D. et al. | 1996
- 156
-
Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfectionTriboulet, R. et al. | 1996
- 161
-
Influence of convection on zinc selenide single crystal growth by chemical vapour transportBöttcher, K. et al. | 1996
- 167
-
Luminescence of Zn1 - xMgxSe, Zn1 - xMg x)Se:Al and Zn1 - xMgxSe:I mixed crystals grown by Bridgman methodFirszt, F. et al. | 1996
- 171
-
Preparation and photoluminescence study of high purity CdTe single crystalsYang, B. et al. | 1996
- 175
-
Investigation of the transition range in seeded vapour grown ZnSe crystalsGeissler, U. et al. | 1996
- 181
-
Vapour growth of II-VI solid solution single crystalsKorostelin, Yu V. et al. | 1996
- 186
-
Atomic configuration and far-infrared optical spectra of lattice vibrations of Zn-Te and Cd-Te modes in Cd1 - xZnx Te(xBelogorokhov, A.I. et al. | 1996
- 186
-
Atomic configuration and far-infrared optical spectra of lattice vibrations of Zn-Te and Cd-Te modes in Cd~1~-~zZn~xTe (x = 0-0.2)Belogorokhov, A. I. / Belogorokhova, L. I. / Belov, A. G. / Lakeenkov, V. M. / Liberant, L. M. / Smirnova, N. A. et al. | 1996
- 191
-
Growth and characterization of the ternary ZnSe-based compounds obtained by low temperature vapour transportMycielski, A. et al. | 1996
- 195
-
Properties of ZnO layers deposited by "photo-assisted" spray pyrolysisOktik, S. et al. | 1996
- 200
-
Layer-by-layer electrodeposition of cadmium telluride onto siliconJackson, F. et al. | 1996
- 205
-
Miscibility gap in ZnxSr1 - xS, ZnxCa1 - xS and ZnxSr1 - xSe thin filmsKitagawa, M. et al. | 1996
- 210
-
Preparation of ZnO films by spray pyrolysisFiddes, A.J.C. et al. | 1996
- 214
-
Nitrogen doping and cattier compensation in p-ZnSeYao, T. / Zhu, Z. / Wu, Y. H. / Song, C. D. / Nishiyama, F. / Kimura, K. / Kajiyama, H. / Miwa, S. / Yasuda, T. et al. | 1996
- 214
-
Nitrogen doping and carrier compensation in p-ZnSeYao, T. et al. | 1996
- 221
-
Fundamental doping limits in wide gap II-VI compoundsFaschinger, W. et al. | 1996
- 229
-
Spin-flip Raman scattering studies of doped epitaxial zinc selenideWolverson, D. et al. | 1996
- 238
-
Light emitting diodes from MOVPE-grown p- and n-doped II-VI compoundsGebhardt, W. et al. | 1996
- 244
-
Activation of shallow dopants in II-VI compoundsWalukiewicz, W. et al. | 1996
- 248
-
Compensating processes in nitrogen d-doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopyZhu, Z. et al. | 1996
- 248
-
Compensating processes in nitrogen -doped ZnSe layers studied by photoluminescence and photoluminescence excitation spectroscopyZhu, Z. / Brownlie, G. D. / Horsburgh, G. / Thompson, P. J. / Wang, S. Y. / Prior, K. A. / Cavenett, B. C. et al. | 1996
- 252
-
Intensity-dependent energy and lineshape variation of donor-acceptor-pair bands in highly compensated ZnSe:NBäume, P. et al. | 1996
- 257
-
Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxyImaizumi, M. et al. | 1996
- 261
-
Real time monitoring of growth and p-type doping processes in MOVPE of ZnSeMiyachi, M. et al. | 1996
- 266
-
Comparison of hydrogen passivation of ZnSe:N using gas source and conventional molecular beam epitaxyHo, E. et al. | 1996
- 271
-
Plasma nitrogen doping efficiency in molecular beam epitaxy of tellurium-based II-VI compoundsBaron, T. et al. | 1996
- 276
-
Raman spectroscopy and selective pair luminescence on ZnSe:NAlbert, D. et al. | 1996
- 280
-
Hole traps in nitrogen-doped ZnSe epitaxial layersMatsumoto, T. et al. | 1996
- 284
-
Doping efficiency and plasma analysis of a nitrogen electron cyclotron resonance plasmaGrün, M. et al. | 1996
- 289
-
Novel results on compensation processes in ZnSe:NKurtz, E. et al. | 1996
- 293
-
Electrical characterization of doped ZnSe-based heterostructures grown by MOVPELampe, S. et al. | 1996
- 298
-
Compensation in heavily N-doped ZnSe: A luminescence studyKothandaraman, C. et al. | 1996
- 302
-
Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayersHoffmann, A. et al. | 1996
- 307
-
Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPEHeitz, R. et al. | 1996
- 312
-
Effects of annealing atmosphere and temperature on acceptor activation in ZnSe:N grown by photoassisted MOVPEOgata, K.-i. et al. | 1996
- 317
-
Nitrogen-doped ZnSe grown by low-pressure metalorganic chemical vapor deposition with alternate growth and active nitrogen dopingMorimoto, K. et al. | 1996
- 321
-
Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSeBrownlie, G.D. et al. | 1996
- 325
-
Optically detected magnetic resonance of MBE-grown ZnSe:NKennedy, T.A. et al. | 1996
- 329
-
The role of defects on radiative transitions in nitrogen doped ZnSeHauksson, I.S. et al. | 1996
- 334
-
Nitrogen-doped ZnSe(100) films grown by molecular beam epitaxy using a capacitively coupled plasma cellSaraie, J. et al. | 1996
- 338
-
Intrinsic defects in II-VI semiconductorsWatkins, G.D. et al. | 1996
- 345
-
DX centres in CdZnTe:Cl and their applicationsThio, T. et al. | 1996
- 350
-
Extended X-ray absorption fine structure study of heavily Cl doped ZnSeAkimoto, K. et al. | 1996
- 354
-
Electrical and structural properties of Cl-doped ZnSe MBE-grown with various doping techniquesKim, Jin-Sang et al. | 1996
- 359
-
Boron implantation into CdTeOldekop, E. et al. | 1996
- 363
-
Optical investigation of Cl-doped ZnSe and ZnSxSe1-x layers grown by metalorganic vapour phase epitaxyHermans, J. et al. | 1996
- 368
-
Strong room temperature excitonic resonance in CdTe:ITran, T.K. et al. | 1996
- 372
-
Complex formation at indium donors in p-CdTeReislöhner, U. et al. | 1996
- 376
-
On the growth mechanism of Li- and Na-doped Zn chalcogenides on GaAs(001) by means of molecular beam epitaxyOhishi, M. et al. | 1996
- 380
-
Spatial correlations of In-donor charges in CdTe layersSuski, T. et al. | 1996
- 384
-
Doping and compensation phenomena of Ag in CdTeBollmann, J. et al. | 1996
- 388
-
Acceptor defects and annealing behavior in indium doped Cd 1-x)ZnxTe (x > 0.7)Suzuki, K. et al. | 1996
- 392
-
Hydrostatic pressure study of indium DX-like centers in MBE-grown CdTe and CdMnTe layersWasik, D. et al. | 1996
- 397
-
Characterization of self-compensating defect complexes in MBE grown CdTe by magnetoluminescence spectroscopyWorschech, L. et al. | 1996
- 402
-
A study of the excess carrier dynamics in ZnSe based structures grown by molecular beam epitaxyMassa, J.S. et al. | 1996
- 406
-
Drift mobilities in chlorine doped Cd0.8Zn0.2TeSuzuki, K. et al. | 1996
- 410
-
Electron mobilities in MOVPE-grown ZnSe quantum wellsDrechsler, M. et al. | 1996
- 414
-
Magneto-optical investigation of the shallow lithium acceptor in zinc selenidePohl, U.W. et al. | 1996
- 418
-
CdTe quantum wires achieved by strain-induced lateral confinementMariette, H. et al. | 1996
- 425
-
Electronic and optical properties of the fractional ZnTe-monolayer superlattice structuresZhao, Q.X. et al. | 1996
- 429
-
Time-resolved luminescence spectroscopy of recombination dynamics in a ZnSSe doping superlatticeKawakami, Y. et al. | 1996
- 434
-
Fabrication and characterisation of dry etched CdTe-CdMnTe quantum dotsRibayrol, A. et al. | 1996
- 438
-
Optimization and optical studies of ZnCdSe-ZnSe heterostructures grown by MOVPECloitre, T. et al. | 1996
- 443
-
Effects of electron localisation on the magneto-optical properties of modulation doped CdTe-CdZnTe quantum wellsKheng, K. et al. | 1996
- 447
-
Optical properties of ZnS and ZnCdS-ZnS MQW grown by molecular beam epitaxy on GaAs and CaF2 substratesYasuda, T. et al. | 1996
- 451
-
Photoluminescence of CdZnSe-ZnSe quantum well structures fabricated by reactive ion etchingStraub, H. et al. | 1996
- 455
-
Room temperature emission in narrow (14 nm) Cd0.35Zn 0.65)Se-ZnSe quantum wires with strong lateral confinement effectsBacher, G. et al. | 1996
- 459
-
Piezoelectric effect in ZnSe-ZnCdSe quantum wells grown on (211)B GaAsWang, S.Y. et al. | 1996
- 463
-
Quantum-confined Franz-Keldysh effect in (ZnCdSe)-(ZnSeS) quantum-well laser diodesToropov, A.A. et al. | 1996
- 467
-
Interband transition and electronic subband studies in CdTe-ZnTe strained single and double quantum wells grown by double-well temperature-gradient vapor depositionKim, T.W. et al. | 1996
- 471
-
Energy level position of Ni and band offsets in Zn1-xCd x)Se:Ni and ZnSxSe1-x:NiSurkova, T.P. et al. | 1996
- 475
-
Excitons in ZnSe1-xSx-ZnSe1-ySy superlattices grown by photomodulated MOCVDPermogorov, S.A. et al. | 1996
- 480
-
Composition dependent determination of band offsets in ZnCdSe-ZnSe and ZnSe-ZnSSe SQW by optical meansLankes, S. et al. | 1996
- 485
-
Effective elastic constants in ZnSe-ZnSe1-xSx strained-layer superlatticesGuan, Z.P. et al. | 1996
- 489
-
Emission mechanism of blue and green bands in ultrathin ZnSe-ZnTe superlatticesTakojima, N. et al. | 1996
- 493
-
Optical and electrical properties of new carrier barrier layer structure of II-VI compoundsTeraguchi, N. et al. | 1996
- 498
-
Band-offset determination in Zn1-xCdxSe-ZnSe multiple quantum wellsPellegrini, V. et al. | 1996
- 502
-
Model calculations for n-CdZnS light emitter grown on p-GaN hole injectorMcCaldin, J.O. et al. | 1996
- 506
-
Optical characterization of MOVPE-grown ZnS-ZnSe short period superlatticesCloitre, T. et al. | 1996
- 510
-
Growth, structural and optical characterization of MBE ZnCdSe-ZnSe quantum wellsReisinger, T. et al. | 1996
- 514
-
Diffusion induced disordering (DID) in ZnSSe-ZnSe superlatticesKuttler, M. et al. | 1996
- 518
-
Photo- and cathodoluminescence of ZnSSe quantum well heterostructures grown by MOVPEGurskii, A.L. et al. | 1996
- 523
-
Optics and magneto-optics of ZnSe heteroepitaxial layersAliev, G.N. et al. | 1996
- 528
-
Photomodulated reflectivity of Zn1-xMnxTe-ZnTe multiple quantum wellsKlar, P.J. et al. | 1996
- 533
-
Interplay between localized and free exciton recombination in CdZnSe-ZnSe multi quantum well structuresGodlewski, M. et al. | 1996
- 537
-
Anisotropic center-of-mass quantization of excitons in CdTe-CdZnTe quantum wellsGourgon, C. et al. | 1996
- 542
-
Band structure and band offsets in Zn1-xCdxSe-ZnSe quantum wellsLivingstone, M. et al. | 1996
- 546
-
Spectroscopy of biexcitons in Zn1-xCdxSe-ZnSe strained-layer quantum wellsMorhain, C. et al. | 1996
- 551
-
CdS-CdSe and CdS-ZnSe intrinsic Stark superlatticesBradley, I.V. et al. | 1996
- 555
-
II-VI blue-green light emittersIshibashi, A. et al. | 1996
- 566
-
On the growth and doping of blue-green emitting ZnSe laser diodesHommel, D. et al. | 1996
- 573
-
Characterization of low defect density blue-green lasersPetruzello, J. et al. | 1996
- 582
-
Lateral waveguiding in blue-green II-VI semiconductor lasersBuijs, M. et al. | 1996
- 586
-
Effect of ZnSe-ZnSSe superlattice buffer on improved emission efficiency of ZnCdSe-MgZnSSe quantum wells for MgZnSSe-based blue-green lasersIchimura, Y. et al. | 1996
- 591
-
Gain-coupled distributed feedback lasers in the blue-green spectral range by focused ion beam implantationEisert, D. et al. | 1996
- 595
-
Design and fabrication of ZnSe-based blue-green surface emitting lasersHonda, T. et al. | 1996
- 600
-
Degradation of microgun-pumped blue lasersHervé, D. et al. | 1996
- 605
-
Magnetic tuning of resonance in semimagnetic semiconductor microcavitiesUlmer-Tuffigo, H. et al. | 1996
- 609
-
Electron-beam pumped laser structures based on MBE grown ZnCdSe-ZnSe superlatticesKozlovsky, V.I. et al. | 1996
- 613
-
Emission wavelength and cavity design dependence of laser behaviour in HgCdTe heterostructuresBonnet-Gamard, J. et al. | 1996
- 618
-
Electron beam pumping of CdZnSe quantum well laser structures using a variableenergy electron beamTrager-Cowan, C. et al. | 1996
- 623
-
Optimization of the waveguide properties for ZnSe laser diodesJakobs, A. et al. | 1996
- 628
-
Growth of II-VI Bragg mirrors by molecular beam epitaxyRakennus, K. et al. | 1996
- 632
-
Compound source molecular beam epitaxy for II-VI laser structuresOhkawa, K. et al. | 1996
- 636
-
Optical properties of a ZnSSe microcavity fabricated by epitaxial lift-offAheme, T. et al. | 1996
- 640
-
Room temperature blue electroluminescence from the ZnMgCdSe quaternary systemFerreira, S.O. et al. | 1996
- 644
-
II-VI lasers - New directionsNurmikko, A.V. et al. | 1996
- 653
-
A study of internal losses in CdZnSe-ZnSe multiple quantum well materialsDonegan, J.F. et al. | 1996
- 657
-
Time-resolved study of stimulated emission in ZnSe-Zn(S,Se) superlatticesDabbicco, M. et al. | 1996
- 661
-
Bleaching of excitonic absorption in II-VI laser diodes under lasing conditionsDiessel, A. et al. | 1996
- 667
-
A comparison of lasing mechanisms in ZnSe and GaAsGalbraith, I. et al. | 1996
- 672
-
Room temperature excitonic lasing in CdTe-CdMnTe multi-quantum-well heterostructuresAlleysson, P. et al. | 1996
- 676
-
Effect of external uniaxial stress on the green-blue emission of a CdZnSe strained quantum well under high excitationMiyake, T. et al. | 1996
- 680
-
Laser emission in CdZnTe-CdMnTe double quantum well heterostructuresKowalczyk, L. et al. | 1996
- 684
-
Overexcited CdSe quantum well lasersBagnall, D.M. et al. | 1996
- 689
-
Stimulated and spontaneous emission studies in ZnS~1~-~xTe~x/ZnSe strain layer superlatticesWong, K. S. / Wang, H. / Sou, I. K. / Wong, G. K. L. / Mowbray, D. J. et al. | 1996
- 689
-
Stimulated and spontaneous emission studies in Zn1-xTe x)-ZnSe strain layer superlatticesWong, K.S. et al. | 1996
- 694
-
Reconstruction and stoichiometry of CdTe(001) surfaces: A grazing incidence X-ray diffraction and reflection high energy electron diffraction studyVeron, M.B. et al. | 1996
- 703
-
Structural properties of ZnSe-GaAs(100) heterostructures with engineered band offsetsBratina, G. et al. | 1996
- 709
-
Cd-based Ohmic contact materials to p-ZnSeKoide, Y. et al. | 1996
- 714
-
Effect of N-doped ZnTe layers on ZnSe-ZnTe graded superlatticesTaike, A. et al. | 1996
- 718
-
Improved contact resistance to n-type wide gap II-VI semiconductorsLazzarino, M. et al. | 1996
- 723
-
Electrical contacts to p-ZnTeTrexler, J.T. et al. | 1996
- 727
-
Discrete Schottky barriers observed for the metal-n-ZnSe(100) systemBlomfield, C.J. et al. | 1996
- 732
-
The preparation of Sb contacts to molecular beam epitaxial ZnSe on GaAs(100) monitored by Raman spectroscopySchneider, A. et al. | 1996
- 736
-
Ultraviolet photoemission experiments on HgTe (110) cleaved surfacesBanouni, M. et al. | 1996
- 741
-
Optical anisotropy of the ZnSe-GaAs interfaceYang, Z. et al. | 1996
- 746
-
AES analysis of plasma-etched ZnSeWirthl, E. et al. | 1996
- 750
-
Reduction of p-ZnTe-p-ZnSe valence band discontinuity by a Ga 2)Se3 interfacial layerYoshida, T. et al. | 1996
- 754
-
Chemical preparation of ordered CdTe(110) and (100) surfaces using atomic hydrogenSlater, D.A. et al. | 1996
- 761
-
The growth start on the heterovalent GaAs-ZnSe interface under Te, Se and Zn terminationSpahn, W. et al. | 1996
- 766
-
The nonlinear behaviour of II-VI materialsWherrett, B.S. et al. | 1996
- 771
-
x(3) Nonlinear susceptibility in II-VI compounds and applications for squeezed light generation in semiconductorsFox, A.M. et al. | 1996
- 776
-
Acceptor bound biexcitons in ZnSe and CdSKutzer, V. et al. | 1996
- 780
-
Coherent exciton-exciton interaction in wide-gap II-VI quantum wells The role of alloy disorderNickolaus, H. et al. | 1996
- 784
-
Bound- and bi-excitons in ZnCdSe-ZnSe multiple quantum wellsPuls, J. et al. | 1996
- 788
-
Dynamics of band filling and of stimulated emission in CdS1 - xSex and Zn1 - yCdyS alloysBreitkopf, T. et al. | 1996
- 793
-
Excitonic nonlinearities in wide gap II-VI multiple quantum wellsCalcagnile, L. et al. | 1996
- 800
-
Propagation of exciton polaritons in ZnSe-ZnSxSe1 - xWundke, K. et al. | 1996
- 805
-
Picosecond optical bistability in ZnSe-CdZnSe multiple quantum wells with a Fabry-Perot cavityShen, D. Z. / Zhang, J. Y. / Wang, S. M. / Yang, B. J. / Fan, X. W. et al. | 1996
- 805
-
Picosecond optical bistability in ZnSe-CdZnSe multiple quantum wells with a Fabry-Pérot cavityShen, D.Z. et al. | 1996
- 809
-
Continuous wave half-gap second-harmonic generation in ZnCdSe-ZnSe asymmetric coupled quantum wellsPellegrini, V. et al. | 1996
- 814
-
Dynamics of dense excitonic systems in ZnSe-based single quantum wellsYamada, Y. et al. | 1996
- 818
-
Electron tunnelling in CdTe-CdMnTe double barrier structuresCain, N. et al. | 1996
- 822
-
Exciton recombination dynamics in ZnCdSe-ZnSe quantum wellsTaylor, R.A. et al. | 1996
- 826
-
Optical studies in ZnSe-GaAs epilayers: Fabry-Perot modes in the upper branch of the polaritonBoemare, C. et al. | 1996
- 830
-
Effects of high excitation on localized excitons in cubic ZnCdS lattice matched to GaAsKawakami, Y. et al. | 1996
- 835
-
Ultrafast electric field induced nonlinear response in ZnSe-ZnSeS superlatticesStevens, C.J. et al. | 1996
- 839
-
Picosecond photoluminescence properties of CdTe-ZnTe superlattices prepared by hot-wall epitaxyKuwabara, H. et al. | 1996
- 843
-
Effects of spatial dispersion in the temperature dependence of the optical absorption in ZnSe heteroepitaxial layers and CdTe and ZnTe crystalsAliev, G.N. et al. | 1996
- 848
-
Phonon sidebands in luminescence spectra of alloy-trapped excitons in disordered solid solutionsKlochikhin, A.A. et al. | 1996
- 853
-
Optical properties of Mn-doped CdS nanocrystalsChamarro, M.A. et al. | 1996
- 857
-
Optical properties of ordered three-dimensional arrays of structurally confined semiconductorsRomanov, S.G. et al. | 1996
- 861
-
Influence of growth conditions on the structural properties of CdSxSe1 - x(xRicolleau, C. et al. | 1996
- 861
-
Influence of growth conditions on the structural properties of CdS~xSe~1~-~x (x = 0.4 and x = 1) nanocrystalsRicolleau, C. / Audinet, L. / Gandais, M. / Gacoin, T. / Boilot, J.-P. / Chamarro, M. et al. | 1996
- 867
-
Gain processes in CdSe quantum dotsWind, O. et al. | 1996
- 871
-
Giant electric field in photo-darkened CdSxSe1 - x semiconductor doped glassesVanhaudenarde-Péoc'h, A. et al. | 1996
- 871
-
Giant static electric field in photo-darkened CdS~xSe~1~-~x semiconductor doped glassesVanhaudenarde-Peoc'h, A. / Moussu, C. / Frey, R. et al. | 1996
- 875
-
Optical and magnetic properties of Fe2+ and Cr2+ in II-VI semiconductors: The Jahn-Teller effectColignon, D. et al. | 1996
- 879
-
Photoluminescence of p-CdTe: Characterization of impurity centers by phonon sidebandsCertier, M. et al. | 1996
- 883
-
Dislocation-related absorption and photoluminescence in deformed n-ZnSe crystalsShreter, Y.G. et al. | 1996
- 889
-
Local vibrational modes of the CuO4-cluster in ZnOBroser, I. et al. | 1996
- 893
-
Modulator and saturable absorber for integration with CdZnSe-ZnSe-ZnMgSSe QW-laser diodesEbeling, W. et al. | 1996
- 898
-
Electro-optical modulation in the blue-green spectral range using ZnSe-based waveguidesBabucke, H. et al. | 1996
- 902
-
ZnSe-ZnCdSe quantum confined Stark effect waveguide modulatorThompson, P.J. et al. | 1996
- 906
-
Performance of MBE grown CdTe photoconductor arrays for hard X-ray detectionYoo, S.S. et al. | 1996
- 910
-
Dependence of CdS-CdTe thin film solar cell characteristics on the processing conditionsAl-Allak, H.M. et al. | 1996
- 916
-
Characterisation of in-situ thermally evaporated CdS-CdTe thin film solar cells with Ni-P back contactsDuke, S. et al. | 1996
- 920
-
Investigation of p-i-n solar cell efficiency enhancement by use of MQW structures in the i-regionAshenford, D.E. et al. | 1996
- 925
-
A study of CdS-CdTe thin film solar cells using beam injection techniquesGalloway, S.A. et al. | 1996
- 930
-
Recrystallisation of electrophoretically deposited CdTe filmsPande, P.C. et al. | 1996
- 935
-
Investigations of the influence of halides on the properties of CeX3-doped (XOberacker, T.A. et al. | 1996
- 935
-
Investigations of the influence of halides on the properties of CeX~3-doped (X = Cl, F) strontium sulphide thin film electroluminescence devicesOberacker, T. A. / Schock, H. W. et al. | 1996
- 939
-
Enhancement of fluorescence and related spectra in Ca1 - x SrxS with cadmium incorporationClough, S. et al. | 1996
- 943
-
SrS:Ce,Mn,Cl - A novel efficient EL phosphorHüttl, B. et al. | 1996
- 947
-
Spin dependent carrier localization in Fe-based semimagnetic semiconductor heterostructuresJonker, B.T. et al. | 1996
- 959
-
Molecular-beam epitaxy of mercury-iron selenide layers and quantum wellsSchikora, D. et al. | 1996
- 967
-
Magnetic-field induced type I-type II transition in CdTe-Cd1 - x MnxTe multiple quantum wellsKuroda, S. et al. | 1996
- 972
-
Ferromagnetism in Cr-based diluted magnetic semiconductorsBlinowski, J. et al. | 1996
- 976
-
Dynamics of exciton magnetic polarons in Cd1 - xMn x)Te-Cd1 - x-yMnxMgyTe quantum wellsHellmann, R. et al. | 1996
- 980
-
Manganese diffusion in MBE-grown Cd(Mn)Te structuresBarcz, A. et al. | 1996
- 985
-
Dynamics of the magnetic polaron formation in ZnSe-ZnMnSe quantum well structuresRossin, V.V. et al. | 1996
- 989
-
Exciton dynamics in MBE grown CdTe-CdMnTe multiple quantum wellsGodlewski, M. et al. | 1996
- 993
-
The s,p-d exchange interaction in Zn1 - xCrxTe diluted magnetic semiconductorsMac, W. et al. | 1996
- 997
-
Magneto-optical study of the exchange interaction in (Cd,Mn)Te under high hydrostatic pressureMeyer, R. et al. | 1996
- 1001
-
Polarization properties of multiple Mn2+-spin-flip Raman scattering in semimagnetic quantum wellsStühler, J. et al. | 1996
- 1005
-
Dimensional dependence of magneto-optical properties of ZnMnSe MBE layersHeimbrodt, W. et al. | 1996
- 1009
-
Optically detected spin-glass transition in superlattices and quantum wells of diluted magnetic semiconductorsDahl, M. et al. | 1996
- 1014
-
Exciton tunnelling and resonances in semimagnetic double-quantum-well structuresHieke, K. et al. | 1996
- 1018
-
On the d-d exchange interaction in Mn-alloyed semimagnetic semiconductorsBednarski, H. et al. | 1996
- 1022
-
Epitaxial growth and magneto-optical study of ferromagnetic-MnSb-antiferromagnetic-MnTe heterostructuresAkinaga, H. et al. | 1996
- 1027
-
Anisotropic magnetic field effects in diluted magnetic semiconductor quantum wellsStirner, T. et al. | 1996
- 1032
-
Towards a dynamical theory of magnetic polaron formationMiao, J. et al. | 1996
- 1037
-
Magnetic field induced transitions in diluted magnetic semiconductor quantum wellsPiorek, T. et al. | 1996
- 1041
-
Carrier generation and multiplication in ZnS:Mn: Investigation of luminescence excitation by synchrotron radiationGumlich, H.-E. et al. | 1996
- 1046
-
Enhanced paramagnetism in ultrathin Cd1 - xMnxTe layersOssau, W. et al. | 1996
- 1052
-
Spin dependent confinement effects in Cd0.9Mn 0.1)Te-Cd0.9Mg0.1Te spin superlatticesOssau, W. et al. | 1996
- 1057
-
Magnetic oscillation of many-body effects in CdTe based modulation doped quantum wellsShen, J.X. et al. | 1996
- 1061
-
Spin-flip Raman scattering studies of ZnSe-Zn1 - xMnxSe multiple quantum well structuresKlar, P.J. et al. | 1996
- 1066
-
Influence of the barrier heights on vertical transport in CdTe-CdMnTe superlatticesChen, P. et al. | 1996
- 1070
-
Low temperature magnetoresistance of the persistent photoconductor Cd0.9Mn0.1Te:InTerry, I. et al. | 1996
- 1075
-
Properties of MBE grown CdYbTe and ZnYbTe on GaAs(100) substratesSadowski, J. et al. | 1996
- 1080
-
Properties of Hg0.7Cd0.3Te-CdTe superlattices with semiconducting wellsTran, T.K. et al. | 1996
- 1085
-
Electrical measurements of Hg1 - xMnxTe films grown by metalorganic vapour phase epitaxyHorsfall, A.B. et al. | 1996
- 1090
-
Extended defects in epitaxial cadmium mercury tellurideWasenczuk, A. et al. | 1996
- 1096
-
Precipitation and migration of point defects in MOCVD CdxHg1 - xTeJones, I.P. et al. | 1996
- 1100
-
Room temperature narrow gap semiconductor diodes as sources and detectors in the 5-10 mm wavelength regionAshley, T. et al. | 1996
- 1100
-
Room temperature narrow gap semiconductor diodes as sources and detectors in the 5-10 m wavelength regionAshley, T. / Elliott, C. T. / Gordon, N. T. / Hall, R. S. / Johnson, A. D. / Pryce, G. J. et al. | 1996
- 1104
-
Landau-split and spin-split cyclotron resonance of two-dimensional electron systems in HgTe quantum wellsTruchsess, M.von et al. | 1996
- 1108
-
Short-range order and micro-inhomogeneities in CdxHg1 - xTe: Characterisation by means of FIR and Raman spectroscopiesVasilevskiy, M.I. et al. | 1996
- 1112
-
Critical point parameters deduced from the dielectric function in HgZnTe and CdZnTe alloysCastaing, O. et al. | 1996
- 1117
-
Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experimentsBelas, E. et al. | 1996
- 1123
-
Correlation between crystal defects and the band gap of epitaxially grown Hg1 - xZnxSe on GaAs(001)Behr, T. et al. | 1996
- 1128
-
Temperature dependent investigation of the HgTe-CdTe valence band offsetTruchsess, M.von et al. | 1996
- 1132
-
Metalorganic vapor phase epitaxial growth of hillock free (100) HgCdTe-GaAs with good electrical propertiesSuh, Sang-Hee et al. | 1996
- 1136
-
Doping of (211)B mercury cadmium tellurideWijewarnasuriya, P.S. et al. | 1996
- 1141
-
Arrhenius results for the diffusion of Hg into CdTeAhmed, M.U. et al. | 1996
- 1148
-
Diffusion of Ag in Cd-rich mercury, cadmium telluride Cd~xHg~1~-~x Te (x = 0.55-0.8)Lyubomirsky, I. / Lyakhovitskaya, V. / Triboulet, R. / Cahen, D. et al. | 1996
- 1148
-
Diffusion of Ag in Cd-rich mercury, cadmium telluride CdxHg1 - xTe (xLyubomirsky, I. et al. | 1996
- 1152
-
Growth and characterization of HgCdTe heterostructures by metalorganic molecular beam epitaxyParikh, A. et al. | 1996
- 1157
-
The band gap of Hg1 - xMgxTe grown by molecular beam epitaxyOehling, S. et al. | 1996
- 1161
-
Molecular beam epitaxy of high quality Hg1 - xCdxTe films with control of the composition distributionVaravin, V.S. et al. | 1996
- 1167
-
ZnCdSe-MgZnSSe laser diodes fabricated by gas-source molecular beam epitaxyImaizumi, M. et al. | 1996
- 1168
-
Direct observation of nitrogen acceptor passivation in ZnSe by hydrogen plasmaYasuda, T. et al. | 1996
- 1171
-
Optical studies of ZnSe-ZnS stain layer superlattices grown on sapphire by MOVPEQi-Wei, Liao et al. | 1996
- 1172
-
Channelled-substrate planar waveguided green laser diodesNakayama, N. et al. | 1996
- 1173
-
Author index| 1996
- 1193
-
Subject index| 1996