Concentration of local levels and surface states in gamma-irradiated metal-insulator-semiconductor structures (English)
- New search for: Kolesnikov, N. V.
- New search for: Mal'khanov, S. E.
- New search for: Yakimenko, A. N.
- New search for: Kolesnikov, N. V.
- New search for: Mal'khanov, S. E.
- New search for: Yakimenko, A. N.
In:
SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV
;
30
, 9
;
884-885
;
1996
-
ISSN:
- Article (Journal) / Print
-
Title:Concentration of local levels and surface states in gamma-irradiated metal-insulator-semiconductor structures
-
Contributors:
-
Published in:SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV ; 30, 9 ; 884-885
-
Publisher:
- New search for: AMERICAN INSTITUTE OF PHYSICS
-
Publication date:1996-01-01
-
Size:2 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 537.622
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 537.622 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 30, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 807
-
Anomalies of the magnetic-field dependence of the galvanomagnetic coefficients in quantizing magnetic fieldsBalev, O. G. / Gorodnichii, O. P. / Chernega, P. I. et al. | 1996
- 810
-
Strain thyristor with an accelerating electric field in the first baseKozlovskii, S. I. et al. | 1996
- 814
-
Modelling of the potential distribution in flat anisotropic semiconductor samplesKhukhryanskii, M. Y. et al. | 1996
- 817
-
Photoconductivity of polycrystalline CdTe:Ag films in the impurity optical absorption regionVaitkus, Y. Y. / Rasulov, R. Y. / Otazhonov, S. M. et al. | 1996
- 821
-
Radiation defect formation in Hg~1~-~xCd~xTe crystals irradiated by 10-MeV hydrogen ionsVoitsekhovskii, A. V. / Korotaev, A. G. / Kokhanenko, A. P. et al. | 1996
- 823
-
Model for the buildup of phosphorus at silicon surfacesAleksandrov, O. V. / Afonin, N. N. et al. | 1996
- 827
-
Anomalous temperature dependence and infrared quenching of equilibrium conductivity in polycrystalline CdSe filmsAiibzhonov, M. / Karimov, M. A. / Saidov, M. S. / Yuldashev, N. K. et al. | 1996
- 831
-
Interband IR optical transitions on Landau levels of bismuth at T=80 KIvanov, K. G. / Kondakov, O. V. / Brovko, S. V. / Zaitsev, A. A. et al. | 1996
- 834
-
Morphology and density of states of a-SiC:H films obtained by rf sputteringLigachev, V. A. / Svirkova, N. N. / Filikov, V. A. / Vasil'eva, N. D. et al. | 1996
- 839
-
Optical properties, density of states, and atomic lattice deformations in silicon-enriched a-SiN~x:H alloysBudagyan, B. G. / Aivazov, A. A. / Stryakhilev, D. A. et al. | 1996
- 845
-
Photodiodes based on InAs~1~-~xSb~x solid solutions for the spectral band in the range 3-5 mMikhailova, M. P. / Stus', N. M. / Slobodchikov, S. V. / Zotova, H. V. / Matveer, B. A. / Talalakin, G. N. et al. | 1996
- 845
-
Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 mu mMikhailova, M.P. / Stus, N.M. / Slobodchikov, S.V. / Zotova, H.V. / Matveev, B.A. / Talalakin, G.N. et al. | 1996
- 849
-
Effect of deposition temperature on the photoluminescence properties of a-C:H filmsVasil'ev, B. A. / Terukov, E. I. / Trapeznikova, I. N. / Chelnokov, V. E. et al. | 1996
- 851
-
Optical and luminescence properties of stressed layers with quantum wells in GaInAsP/InP heterostructures grown by MOS hydride epitaxyGovorkov, A. V. / Labutin, O. A. et al. | 1996
- 857
-
Trapping and relaxation of charge at structural defects in epitaxial gallium arsenideOstrovskii, I. V. / Saiko, S. V. et al. | 1996
- 861
-
Photoconductivity kinetics in Pb~1~-~xMn~xTe(In) solid solutions with varying compositionAkimov, B. A. / L'vova, N. A. / Ryabova, L. I. et al. | 1996
- 864
-
Defects in sodium-doped lead and tin chalogenides: formation, interaction, and influence of the defects on the electronic spectrumAlekseeva, G. T. / Gurieva, E. A. / Konstantinov, P. P. / Prokof'eva, L. V. et al. | 1996
- 868
-
Inversion of hot electrons in Ga~1~-~xAl~xAS in strong E H fieldsDzamukashvili, G. E. et al. | 1996
- 868
-
Inversion of hot electrons in Ga1-xAlxAs in strong E perpendicular to H fieldsDzamukashvili, G.E. et al. | 1996
- 871
-
Thermogradient concentration effect in bipolar semiconductorsKonin, A. M. / Sashchuk, A. P. et al. | 1996
- 873
-
Photoelectric properties of heterojunctions based on wide-gap II-VI compoundsMakhnii, V. P. et al. | 1996
- 876
-
Energy spectrum and photoluminescence of a GaAs ( delta -Sn) structure grown on a vicinal faceKadushkin, V.I. / Shangina, E.L. et al. | 1996
- 876
-
Energy spectrum and photoluminescence of a GaAs (-Sn) structure grown on a vicinal faceKadushkin, V. I. / Shangina, E. L. et al. | 1996
- 879
-
Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrixEgorov, A. Y. / Zhukov, A. E. / Kop'ev, P. S. / Ledentsov, N. N. / Maksimov, M. V. / Ustinov, V. M. / Tsatsul'nikov, A. F. / Bert, N. A. / Kosogov, A. O. / Bimberg, D. et al. | 1996
- 884
-
Concentration of local levels and surface states in gamma-irradiated metal-insulator-semiconductor structuresKolesnikov, N. V. / Mal'khanov, S. E. / Yakimenko, A. N. et al. | 1996
- 886
-
Computer model of growth of an A^I^I^IB^I^I^IC^V/A^I^I^IC^V heterojunction with a laterally inhomogeneous distribution of constituents A and B during molecular beam epitaxyPeskov, N. V. / Medvedev, B. K. et al. | 1996
- 891
-
Effect of the cracking zone temperature of a solid state arsenic source on the composition of background impurities in GaAs obtained by molecular beam epitaxyZhuravlev, K. S. / Kalagin, A. K. / Moshegov, N. T. / Toropov, A. I. / Shamirzaev, T. S. / Shegai, O. A. et al. | 1996
- 899
-
Tunnel metal-dielectric-semiconductor structure with a high current density (reverse-bias mode)Veksler, M. I. et al. | 1996