Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament (English)
- New search for: Makimoto, T.
- New search for: Kobayashi, N.
- New search for: Makimoto, T.
- New search for: Kobayashi, N.
- New search for: Feldman, L. C.
- New search for: Nishizawa, J.
- New search for: Van der Weg, W. F.
In:
A journal devoted to applied physics and chemistry of surfaces and interfaces
com
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403-406
;
1996
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ISSN:
- Article (Journal) / Print
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Title:Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filament
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Contributors:Makimoto, T. ( author ) / Kobayashi, N. ( author ) / Feldman, L. C. / Nishizawa, J. / Van der Weg, W. F.
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Published in:APPLIED SURFACE SCIENCE ; 100/101, com ; 403-406
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Publisher:
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Publication date:1996-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.35
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.35 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 100/101, Issue com
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Quantitative XPS: non-destructive analysis of surface nano-structuresTougaard, S. et al. | 1996
- 11
-
Auger electron peaks of Cu in XPSJo, M. / Tanaka, A. et al. | 1996
- 15
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Intrinsic Auger signal profiles derived by Monte Carlo analysisDing, Z.-J. / Shimizu, R. / Goto, K. et al. | 1996
- 20
-
The influence of elastic scattering on the concentration dependence of the photoelectron line intensityTilinin, I. S. / Jablonski, A. / Lesiak-Orlowska, B. et al. | 1996
- 25
-
True Auger spectral shapes (standards)Takeichi, Y. / Goto, K. / Gaidarova, V. et al. | 1996
- 30
-
Comparison of AES chemical shifts with XPS chemical shiftsSekine, T. / Ikeo, N. / Nagasawa, Y. et al. | 1996
- 36
-
Simultaneous determination of composition and thickness of thin iron-oxide films from XPS Fe 2p spectraGraat, P. C. J. / Somers, M. A. J. et al. | 1996
- 41
-
A general procedure for extracting quantitative depth information from take-off-angle-resolved XPS and AESGries, W. H. et al. | 1996
- 47
-
Calculations of 'effective' inelastic mean free paths in solidsTanuma, S. / Ichimura, S. / Yoshihara, K. et al. | 1996
- 51
-
Auger electron spectroscopy measurement of electron attenuation lengths using multilayer systemsSuzuki, M. / Mogi, K. / Takenaka, H. et al. | 1996
- 56
-
XPS depth profiling by changing incident X-ray energyShimada, H. / Matsubayashi, N. / Imamura, M. / Sato, T. / Nishijima, A. et al. | 1996
- 60
-
Enhanced Raman scattering from copper phthalocyanine on Pt by use of a Weierstrass prismFutamata, M. / Keim, E. / Bruckbauer, A. / Schumacher, D. / Otto, A. et al. | 1996
- 64
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Surface mechanical property testing by depth sensing indentationMeneve, J. L. / Smith, J. F. / Jennett, N. M. / Saunders, S. R. J. et al. | 1996
- 69
-
Depth-dependent non-destructive analysis of thin overlayers using total-reflection-angle X-ray spectroscopyShibata, N. / Okubo, S. / Yonemitsu, K. et al. | 1996
- 73
-
High sensitivity of positron-annihilation induced Auger-electron spectroscopy to surface impuritiesOhdaira, T. / Suzuki, R. / Mikado, T. / Ohgaki, H. / Chiwaki, M. / Yamazaki, T. / Hasegawa, M. et al. | 1996
- 77
-
High depth resolution depth profiling of metal films using SIMS and sample rotationSykes, D. E. / Chew, A. / Hems, J. / Stribley, K. et al. | 1996
- 84
-
Determination of the interface region in multilayer Si/Mo by Auger depth profile and factor analysisMorohashi, T. / Hoshi, T. / Nikaido, H. / Kudo, M. et al. | 1996
- 89
-
Analysis of Auger sputter depth profiles with a resolution functionKitada, T. / Harada, T. / Tanuma, S. et al. | 1996
- 92
-
Oxide thin films formed during rotational AES sputter depth profiling of Ni/Cr multilayers using oxygen ionsZalar, A. / Seibt, E. W. / Panjan, P. et al. | 1996
- 97
-
Damage profiling of Ar^+ sputtered Si(100) surface by medium energy ion scattering spectroscopyLee, J. C. / Jeong, C. S. / Kang, H. J. / Kim, H. K. / Moon, D. W. et al. | 1996
- 102
-
Thickness dependent electron stimulated desorption of thin epitaxial films of alkali halidesSzymonski, M. / Kolodziej, J. / Czuba, P. / Piatkowski, P. / Korecki, P. / Postawa, Z. / Itoh, N. et al. | 1996
- 107
-
UPS studies of conducting polymers: dopant effect on conjugated polymer systems sensitive to conductivityTakemura, S. / Kitagawa, Y. / Kato, H. / Nakajima, Y. et al. | 1996
- 112
-
Surface characterization of cell adhesion controlled polymer modified by ion bombardmentNakao, A. / Kaibara, M. / Iwaki, M. / Suzuki, Y. / Kusakabe, M. et al. | 1996
- 116
-
Structural properties of epitaxially grown perfluoro n-alkane thin films prepared by vapor depositionIshida, K. / Horiuchi, T. / Kai, S. / Matsushige, K. et al. | 1996
- 120
-
Photoresist characteristics of polyurea films prepared by vapor deposition polymerization. Depolymerization of polyureaIijima, M. / Sato, M. / Takahashi, Y. et al. | 1996
- 124
-
Molecular orientation of polyimide films determined by an optical retardation methodSakamoto, K. / Arafune, R. / Ushioda, S. / Suzuki, Y. / Morokawa, S. et al. | 1996
- 129
-
Secondary ion emission from Langmuir-Blodgett (LB) films investigated by time-of-flight secondary ion mass spectrometryKudo, M. / Yamada, S. / Yoshida, S. / Watanabe, T. / Hoshi, T. et al. | 1996
- 134
-
Ion induced alteration at Pb-Sn alloy surface investigated by Auger electron spectroscopy and X-ray photoelectron spectroscopyKudo, M. / Ishijima, A. / Morohashi, T. et al. | 1996
- 138
-
Influence of ion-implantation on native oxidation of Si in a clean-room atmosphereYano, F. / Hiraoka, A. / Itoga, T. / Kojima, H. / Kanehori, K. / Mitsui, Y. et al. | 1996
- 143
-
Surface structure analysis of dispersed metal sites on single crystal metal oxides by means of polarization-dependent total-reflection fluorescent EXAFSChun, W.-J. / Asakura, K. / Iwasawa, Y. et al. | 1996
- 147
-
Luminescent properties of an anodically oxidized P-doped silicon waferIwaso, M. / Arakawa, T. et al. | 1996
- 152
-
Submicron particle analysis by the Auger microprobe (FE-SAM)Ito, H. / Ito, M. / Magatani, Y. / Soeda, F. et al. | 1996
- 156
-
Determination of Al~xGa~1~-~x As Auger sensitivity factorsChen, W. D. / Cui, Y. D. et al. | 1996
- 160
-
The surface and interface reaction of metal thin film on sapphire substrateKang, H. J. / Kim, C. H. / Park, N. S. / Kim, M. W. et al. | 1996
- 165
-
Effect of different surface treatments on the precipitation of boron nitride for stainless steel SUS304Suzuki, Y. / Homma, T. / Minato, M. / Itoh, Y. et al. | 1996
- 169
-
Ga migration process in Au film on (100) GaAs under temperature treatment in vacuumBryantseva, T. A. / Lioubtchenko, D. V. / Lopatin, V. V. et al. | 1996
- 174
-
Temperature-programmed desorption of positive ions and neutral molecules from alkali halide layers deposited on a metal surfaceKawano, H. / Kamidoi, S. / Shimizu, H. / Ushimaru, K. / Asada, H. et al. | 1996
- 179
-
Heating effects on modifying carbon surface by reactive plasmaIzumi, Y. / Katoh, M. / Ohte, T. / Ohtani, S. / Kojima, A. / Saitoh, N. et al. | 1996
- 184
-
The effect of EB irradiation with and without hot-jet Cl~2 on an ultra-thin GaN layer for selective etchingYoshida, S. / Sasaki, M. / Ishikawa, T. et al. | 1996
- 189
-
A modified surface of titanium and its vacuum characteristicHomma, T. / Minato, M. / Itoh, Y. / Akiya, S. / Suzuki, T. et al. | 1996
- 193
-
Empirical formulae of the threshold temperature range for dissociative positive ionization of alkali halides on heated metal surfacesKawano, H. / Ohgami, K. / Matsui, S. / Kitayama, Y. et al. | 1996
- 199
-
Thermal positive ion production from thallium chloride molecules impinging upon a tungsten surface heated in high vacuaKawano, H. / Ohgami, K. / Serizawa, N. et al. | 1996
- 203
-
Effect of gas adsorption on the segregation behavior of substrate Cu on Ti filmYoshitake, M. / Yoshihara, K. et al. | 1996
- 207
-
Quantitative relationship between the work function and transfer ratio of a potassium-adsorbed MIM cathodeKusunoki, T. / Suzuki, M. et al. | 1996
- 211
-
Adsorption and thermal decomposition of diethyltellurium on GaAs(100)Gheyas, S. I. / Nishio, M. / Urisu, T. / Ogawa, H. et al. | 1996
- 216
-
Behavior of zirconium on ZrO/W(100) surfaceSatoh, H. / Nakane, H. / Adachi, H. et al. | 1996
- 222
-
Sn segregation to the low index surfaces of a copper single crystalDu Plessis, J. / Viljoen, E. C. et al. | 1996
- 226
-
Investigation of characteristics of carbon materials with various structures modified by plasmas using plasma diagnostics and material-surface analysisKatoh, M. / Izumi, Y. / Kimura, H. / Ohte, T. / Kojima, A. / Ohtani, S. et al. | 1996
- 232
-
Hydrogen desorption characteristics of composite Co-TiN nanoparticlesSakka, Y. / Ohno, S. et al. | 1996
- 238
-
The correlation between surface charge distribution and flashover properties of alumina surface in vacuumKobayashi, T. S. / Maeyama, M. / Imada, H. / Saito, Y. et al. | 1996
- 243
-
Charge-up and charge compensation on monochromatized X-ray photoelectron spectroscopic measurements of alumina and glassTomizuka, H. / Ayame, A. et al. | 1996
- 248
-
Oxide thickness dependence of photocurrent for the GeO~2/Ge film systemMatsuo, Y. / Oishi, K. et al. | 1996
- 252
-
Water vapor effects on the TeO~2/Te thin film conductanceSuehara, S. / Hatano, T. / Nukui, A. et al. | 1996
- 256
-
NO interaction with thermally activated CaO and SrO surfacesYanagisawa, Y. et al. | 1996
- 260
-
Surface oxygen and electrical resistance of YBa~2Cu~4O~8Saito, S. / Ishihara, M. / Tani, T. / Maeda, T. / Watanabe, N. / Rittaporn, I. / Koshizuka, N. et al. | 1996
- 264
-
Angular resolved EPMA analysis of thin films prepared by pulsed laser ablation of CdWO~4(010)Tanaka, K. / Yokota, N. / Shirai, N. / Zhuang, Q. / Nakata, R. et al. | 1996
- 268
-
Structural fluctuation of SiO~2 network at the interface with SiSugita, Y. / Watanabe, S. / Awaji, N. / Komiya, S. et al. | 1996
- 272
-
Characterization of freeze-dried powders prepared by alkoxide route for YBCO superconductorsTachiwaki, T. / Sugimoto, J. / Ito, T. / Hiraki, A. et al. | 1996
- 277
-
New-type focused fast atom beam (F-FAB) source and evaluation of emitted beam density distributionHatakeyama, M. / Nagahama, I. / Ichiki, K. / Nakao, M. / Hatamura, Y. et al. | 1996
- 283
-
Simulation of geometrical aberration and beam shape of scanning X-ray probeIwai, H. / Oiwa, R. / Larson, P. E. / Kudo, M. et al. | 1996
- 287
-
Development of high spatial resolution Auger microscope as applied to semiconductor analysisYamada, T. / Kudo, M. / Ando, Y. / Sekine, T. / Sakai, Y. et al. | 1996
- 292
-
A new type of RHEED apparatus equipped with an energy filterHorio, Y. / Hashimoto, Y. / Ichimiya, A. et al. | 1996
- 297
-
Apparatus for positron-annihilation-induced Auger electron spectroscopy with a pulsed positron beamSuzuki, R. / Ohdaira, T. / Mikado, T. / Ohgaki, H. / Chiwaki, M. / Yamazaki, T. et al. | 1996
- 301
-
Time-resolved detection of laser-ablated particles based on intensity decrease of cw probe laser beamHattori, M. / Sekine, S. / Ooie, T. / Nonaka, H. et al. | 1996
- 305
-
Design of an ultrahigh vacuum compatible system for studying the influence of acoustic waves on surface chemical processesMitrelias, T. / Ostanin, V. P. / Gruyters, M. / King, D. A. et al. | 1996
- 311
-
Ultrahigh vacuum system for atomic-scale planarization of 6 inch Si(001) substrateIdota, K. / Niwa, M. / Sumita, I. et al. | 1996
- 316
-
Processes in low-energy ion-surface collisions: preferential sputtering, defect and adatom formationGnaser, H. et al. | 1996
- 329
-
Preferential sputtering and surface segregation of CuZr alloysKang, H. J. / Kim, C. H. / Park, N. S. / O'Connor, D. J. / MacDonald, R. et al. | 1996
- 333
-
Dissociative scattering of low-energy SiF^+~3 and SiF^+ ions (5-200 eV) on Cu(100) surfaceYamamoto, H. / Baba, Y. / Sasaki, T. A. et al. | 1996
- 338
-
Monte Carlo simulation of ion-induced kinetic electron emission from a metal surfaceKawata, J. / Ohya, K. et al. | 1996
- 342
-
Fundamental study on powder-scattering in positive- and negative-ion implantation into powder materialsTsuji, H. / Ishikawa, J. / Itoh, H. / Toyota, Y. / Gotoh, Y. et al. | 1996
- 347
-
Investigation of the physical and chemical interaction of a low energy oxygen ion beam with oxide superconducting filmsPindoria, G. / Badaye, M. / Wang, F. / Kawaguchi, K. / Morishita, T. et al. | 1996
- 351
-
Angular distribution of particles sputtered from GaAs by Ar^+ and Xe^+ ion bombardmentAoyama, T. / Tanemura, M. / Okuyama, F. et al. | 1996
- 355
-
Soft X-ray emissions by highly charged ions on solid surfaces: Mo and Ta surfacesEmoto, T. / Komatsu, K. / Ichimiya, A. / Ninomiya, S. / Sekiguchi, M. et al. | 1996
- 360
-
Charging phenomenon of insulators in negative-ion implantationToyota, Y. / Tsuji, H. / Nagumo, S. / Gotoh, Y. / Ishikawa, J. et al. | 1996
- 365
-
Analysis of the sensing mechanism of tin dioxide thin film gas sensors using the change of work function in flammable gas atmosphereYea, B. / Konishi, R. / Osaki, T. / Abe, S. / Tanioka, H. / Sugahara, K. et al. | 1996
- 370
-
Development of ion irradiation system for in situ observation of ion irradiated semiconductor surfaces by ultra high vacuum scanning tunneling microscopeIshikawa, J. / Tsuji, H. / Kameyama, K. / Shimada, S. / Gotoh, Y. et al. | 1996
- 374
-
Roughness study of ion-irradiated silica glass surfaceOyoshi, K. / Hishita, S. / Wada, K. / Suehara, S. / Aizawa, T. et al. | 1996
- 378
-
Field emission from transition metal nitrideEndo, M. / Nakane, H. / Adachi, H. et al. | 1996
- 383
-
Molecular beam epitaxy of GaAs/Al~xGa~1~-~xAs/In~yGa~1~-~yAs heterostructures for opto-electronic devices: control of growth parametersKoehler, K. et al. | 1996
- 391
-
Surface chemistry of materials deposition at atomic layer levelSuntola, T. et al. | 1996
- 399
-
CBE-grown high-quality GaAs on Si substrateUchida, H. / Adachi, M. / Nishikawa, H. / Egawa, T. / Jimbo, T. / Umeno, M. et al. | 1996
- 403
-
Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filamentMakimoto, T. / Kobayashi, N. et al. | 1996
- 407
-
Infrared external reflection spectroscopy of self-assembled monolayer films on Si substrate with a buried metal layer (BML) structureKobayashi, Y. / Ogino, T. et al. | 1996
- 412
-
In situ observation of nitridation of GaAs (001) surfaces by infrared reflectance spectroscopyUwai, K. / Yamauchi, Y. / Kobayashi, N. et al. | 1996
- 417
-
Decomposition of triethylindium (TEI)on GAP(001) surface studied by TPD, XPS and RHEEDMurata, J. / Takeuchi, T. / Suzuki, Y. / Sanada, N. / Fukuda, Y. et al. | 1996
- 421
-
Initial stage of oxidation of Si(100) surfaces in dry oxygenInanaga, K. / Nakahata, T. / Furukawa, T. / Ono, K. et al. | 1996
- 425
-
Atomically flat, ultra thin-SiO~2/Si(001) interface formation by UHV heatingNiwa, M. / Okada, K. / Sinclair, R. et al. | 1996
- 431
-
Initial oxidation of Si(311) surfaces studied by high-resolution electron energy loss spectroscopyIkeda, H. / Yamada, T. / Hotta, K. / Zaima, S. / Yasuda, Y. et al. | 1996
- 436
-
High purity ozone oxidation on hydrogen passivated silicon surfaceKurokawa, A. / Ichimura, S. et al. | 1996
- 440
-
STM analysis of wet-chemically prepared H-Si(001) surfaceMorita, Y. / Tokumoto, H. et al. | 1996
- 444
-
Oxygen adsorption on hydrogen-preadsorbed Si(111)7 x 7 observed by second harmonic generation (SHG)Nakamura, K. / Ichimura, S. / Shimizu, H. et al. | 1996
- 449
-
Growth kinetics of thermal oxidation process on Si(100) by real time ultraviolet photoelectron spectroscopyEnta, Y. / Takegawa, Y. / Suemitsu, M. / Miyamoto, N. et al. | 1996
- 454
-
Initial stages of oxidation of hydrogen-terminated Si surface stored in airMiura, T.-A. / Niwano, M. / Shoji, D. / Miyamoto, N. et al. | 1996
- 460
-
Doping dependence of second harmonic generation from native oxide/Si(111) interfacesHirayama, H. / Watanabe, K. / Kawada, M. et al. | 1996
- 465
-
Real-time analysis of III-V-semiconductor epitaxial growthRichter, W. / Zettler, J.-T. et al. | 1996
- 478
-
Epitaxial growth of GaAs on HF-treated Si substratesUchida, Y. / Minemura, J. / Yazawa, Y. / Warabisako, T. et al. | 1996
- 482
-
GaAs-based LED on Si substrate with GaAs islands active region by droplet-epitaxyHasegawa, Y. / Egawa, T. / Jimbo, T. / Umeno, M. et al. | 1996
- 487
-
Novel method of strain-relaxed Si~1~-~xGe~x growth on Si(100) by MBEIwano, H. / Yoshikawa, K. / Kojima, A. / Hayashi, K. / Zaima, S. / Yasuda, Y. et al. | 1996
- 491
-
Si epitaxial growth at low temperatures using remote plasma processYoshida, A. / Utsumi, K. / Ganjoo, A. et al. | 1996
- 494
-
Routine measurement of the absolute As~4 flux in a molecular beam epitaxy system with conventional RHEED equipmentHeyn, C. / Harsdorff, M. et al. | 1996
- 498
-
Synthesis of metastable group-IV alloy semiconductors by ion implantation and ion-beam-induced epitaxial crystallizationKobayashi, N. / Hasegawa, M. / Hayashi, N. / Katsumata, H. / Makita, Y. / Shibata, H. / Uekusa, S. et al. | 1996
- 503
-
Atomic structure analysis of the interfaces in Si/Ge superlatticesSumitomo, K. / Nishioka, T. / Ogino, T. et al. | 1996
- 508
-
Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMSFuruya, M. / Soga, M. / Takano, H. et al. | 1996
- 513
-
Co overlayer formation process on Si(100)2 x 1 studied by SR-PESJikimoto, T. / Heck, C. / Komoku, K. / Hirai, M. / Kusaka, M. / Iwami, M. et al. | 1996
- 518
-
Behavior of ultrathin layers of Co on Si and Ge systemsPrabhakaran, K. / Ogino, T. et al. | 1996
- 522
-
Valence band structure of metal silicides modified by argon ion implantationYamauchi, S. / Hasebe, Y. / Ohshima, H. / Hattori, T. / Hirai, M. / Kusaka, M. / Iwami, M. et al. | 1996
- 526
-
Electrical properties of metal/Si~1~-~xGe~x/Si(100) heterojunctionsShinoda, H. / Kosaka, M. / Kojima, J. / Ikeda, H. / Zaima, S. / Yasuda, Y. et al. | 1996
- 530
-
Microstructure studies of PdGe/Ge ohmic contacts to n-type GaAs formed by rapid thermal annealingChen, W. D. / Xie, X. L. / Cui, Y. D. / Chen, C. H. / Hsu, C. C. et al. | 1996
- 534
-
Technology development strategies for the 21st centuryBohr, M. T. et al. | 1996
- 541
-
High-rate deposition of high-quality Cu film with LPCVDNumajiri, K. / Goya, T. / Tobe, R. / Okada, O. / Hosokawa, N. / Mu, C. / Cox, N. / Scott, C. / Yu, J. et al. | 1996
- 546
-
Low pressure MOCVD of TiN thin filmsKim, S. W. / Jimba, H. / Sekiguchi, A. / Okada, O. / Hosokawa, N. et al. | 1996
- 551
-
A nondestructive analysis technique for residual thin films in deep-submicron contact holesNinomiya, K. / Kure, T. / Sudo, Y. / Kuroda, K. / Todokoro, H. et al. | 1996
- 556
-
Annealing behavior of phosphorus in native oxide films on heavily phosphorus doped siliconYing, W. B. / Mizokawa, Y. / Yu, Y. B. / Kamiura, Y. / Iida, M. / Kawamoto, K. et al. | 1996
- 561
-
Phosphorus redistribution in the surface region of heavily phosphorus doped siliconMizokawa, Y. / Ying, W. B. / Yu, Y. B. / Kamiura, Y. / Iida, M. / Kawamoto, K. et al. | 1996
- 566
-
Selective epitaxial Si based layers and TiSi~2 deposition by integrated chemical vapor depositionRegolini, J. L. / Margail, J. / Bodnar, S. / Maury, D. / Morin, C. et al. | 1996
- 575
-
In-situ IR and mass spectroscopic study of the Al(CH~3)~2H/a-Si:H reaction processesWadayama, T. / Maiwa, Y. / Shibata, H. / Hatta, A. et al. | 1996
- 579
-
Low temperature etching of Si and PR in high density plasmasPuech, M. / Maquin, P. et al. | 1996
- 583
-
Deep trench etching in silicon with fluorine containing plasmasMansano, R. D. / Verdonck, P. / Maciel, H. S. et al. | 1996
- 587
-
CHF~3 adsorption and decomposition on clean and oxygen covered Al(111)Kawada, H. / Reiff, S. / Block, J. H. et al. | 1996
- 592
-
Photoluminescence enhancement of (NH~4)~2S~x passivated InP surface by rapid thermal annealingChen, W. D. / Li, X. Q. / Duan, L. H. / Xie, X. L. / Cui, Y. D. et al. | 1996
- 596
-
Surface barriers formation mechanism of the chemically etched CdTe(111) polar surfaces and gold interfacesTakeuchi, T. / Kore-eda, T. / Ebina, A. et al. | 1996
- 601
-
A theoretical analysis of temperature dependence on hydrogenated amorphous silicon thin-film transistors with the consideration of resistance of the a-Si:H film layer as a function of temperatureChen, B.-Y. / Chen, J.-R. / Jenq, F.-L. / Hong, C.-S. et al. | 1996
- 607
-
Infrared study of chemistry of Si surfaces in etching solutionNiwano, M. / Miura, T.-A. / Tajima, R. / Miyamoto, N. et al. | 1996
- 612
-
Carbon Auger peak shape measurements in the characterization of reactions on (001) diamondViljoen, P. E. / Roos, W. D. / Swart, H. C. / Holloway, P. H. et al. | 1996
- 617
-
Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometryYu, G. / Soga, T. / Jimbo, T. / Umeno, M. et al. | 1996
- 621
-
ZnSe crystal growth by radical assisted MOCVDHatanaka, Y. / Aoki, T. / Morita, M. / Nakanishi, Y. et al. | 1996
- 625
-
Correlation between cathodoluminescence and structural defects in ZnS/GaAs(100) and ZnSe/GaAs(100) studied by transmission electron microscopyMitsui, T. / Yamamoto, N. / Yoshino, J. / Tadokoro, T. / Ohta, S. / Yanashima, K. / Inoue, K. et al. | 1996
- 634
-
Aluminum doping of ZnTe grown by MOVPEGheyas, S. I. / Hirano, S. / Nishio, M. / Ogawa, H. et al. | 1996
- 639
-
Preparation of blue-emitting SrGa~2Se~4:Ce thin films by multi-source depositionNakanishi, Y. / Shiba, F. / Sowa, K. / Tatsuoka, H. / Kuwabara, H. / Nakamura, T. / Hatanaka, Y. et al. | 1996
- 643
-
Microwave plasma assisted LCVD growth and characterization of GaNZhou, B. / Li, X. / Tansley, T. L. / Butcher, K. S. A. et al. | 1996
- 647
-
Growth of high-quality ZnTe layers by MOVPEGheyas, S. I. / Hirano, S. / Nishio, M. / Ogawa, H. et al. | 1996
- 652
-
XPS analysis of chemically etched II-VI semiconductor surfacesKita, A. / Ozawa, M. / Gutleben, C. D. et al. | 1996
- 656
-
Preparation and photoluminescent characteristics of Zn~xSr~1~-~xS:Ce thin filmsLee, S. T. / Kitagawa, M. / Ichino, K. / Kobayashi, H. et al. | 1996