Far-infrared emission from parabolically graded quantum wells (English)
- New search for: Maranowski, K. D.
- New search for: Gossard, A. C.
- New search for: Unterrainer, K.
- New search for: Gornik, E.
- New search for: Maranowski, K. D.
- New search for: Gossard, A. C.
- New search for: Unterrainer, K.
- New search for: Gornik, E.
In:
APPLIED PHYSICS LETTERS
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69
, 23
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3522-3524
;
1996
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ISSN:
- Article (Journal) / Print
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Title:Far-infrared emission from parabolically graded quantum wells
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Contributors:Maranowski, K. D. ( author ) / Gossard, A. C. ( author ) / Unterrainer, K. ( author ) / Gornik, E. ( author )
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Published in:APPLIED PHYSICS LETTERS ; 69, 23 ; 3522-3524
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Publisher:
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Publication date:1996-01-01
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Size:3 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 69, Issue 23
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3453
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Experimental characterization of reactive ion etched germanium diffraction gratings at 10.6 mmStiens, J. et al. | 1996
- 3453
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Experimental characterization of reactive ion etched germanium diffraction gratings at 10.6 μmStiens, J. / Ranson, W. / Cottam, R. / De Tandt, C. / Vounckx, R. / Kotov, V. / Shkerdin, G. / Dhoedt, B. / Baets, R. et al. | 1996
- 3456
-
Photoluminescence related to the two‐dimensional electron gas at a GaN/AlGaN heterointerfaceBergman, J. P. / Lundstro¨m, T. / Monemar, B. / Amano, H. / Akasaki, I. et al. | 1996
- 3459
-
The effect of scaling microlasers on modal noiseThiyagarajan, S. M. K. / Levi, A. F. J. et al. | 1996
- 3462
-
Observations of two separable photoquenching phenomena in lightly n‐type bulk GaAs by optical absorption, Hall effect, and positron annihilationTu¨zemen, S. / Le Berre, C. / Corbel, C. / Brozel, M. R. / Yildirim, M. et al. | 1996
- 3465
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Vacuum field induced mixing of light and heavy‐hole excitons in a semiconductor microcavityGoobar, E. / Ram, R. J. / Ko, J. / Bjo¨rk, G. / Oestreich, M. / Imamoglu, A. et al. | 1996
- 3468
-
Form birefringence of volume gratings in photopolymersYang, Changxi / Yeh, Pochi et al. | 1996
- 3471
-
Near field scanning optical microscopy measurements of optical intensity distributions in semiconductor channel waveguidesPoweleit, C. D. / Naghski, David H. / Lindsay, Susan M. / Boyd, Joseph T. / Jackson, Howard E. et al. | 1996
- 3474
-
Wide bandwidth (100) GaAs/fluorides quarter‐wavelength Bragg reflectors grown by molecular beam epitaxyShi, Z. / Zogg, H. / Mu¨ller, P. / Jung, I. D. / Keller, U. et al. | 1996
- 3477
-
Ring and stripe oxide‐confined vertical‐cavity surface‐emitting lasersHuffaker, D. L. / Deng, H. / Deng, Q. / Deppe, D. G. et al. | 1996
- 3480
-
Transient photoconductivity in quantum well infrared photodetectorsErshov, M. et al. | 1996
- 3483
-
Enhancement of the acoustic phase conjugate reflectivity in nonlinear piezoelectric ceramics by applying static electric or static stress fieldsOhno, M. / Takagi, K. et al. | 1996
- 3486
-
Elastic guided waves in plates with rough surfacesLobkis, O. I. / Chimenti, D. E. et al. | 1996
- 3489
-
Synthesis of crystalline carbon nitride thin films by laser processing at a liquid–solid interfaceSharma, A. K. / Ayyub, P. / Multani, M. S. / Adhi, K. P. / Ogale, S. B. / Sunderaraman, M. / Upadhyay, D. D. / Banerjee, S. et al. | 1996
- 3492
-
Manipulation of growth modes in heteroepitaxy: Ni/Cu(111)Wulfhekel, Wulf / Beckmann, Ingo / Lipkin, Nuphar N. / Rosenfeld, Georg / Poelsema, Bene / Comsa, George et al. | 1996
- 3495
-
High electron mobility in bipolar composites of organic moleculesLin, L.‐B. / Jenekhe, S. A. / Borsenberger, P. M. et al. | 1996
- 3498
-
Control of Co flux through ternary compound for the formation of epitaxial CoSi2 using Co/Ti/Si systemKim, Gi Bum / Baik, Hong Koo / Lee, Sung Man et al. | 1996
- 3501
-
Structural and mechanical properties of (B0.5−xSix)N0.5 films synthesized by dual‐ion‐beam depositionOng, C. W. / Zhao, X.‐A. / Ng, Y. M. / Chan, K. F. / Tsang, T. C. / Choy, C. L. / Chan, P. W. et al. | 1996
- 3504
-
Local electron field emission characteristics of pulsed laser deposited diamondlike carbon filmsChuang, F. Y. / Sun, C. Y. / Chen, T. T. / Lin, I. N. et al. | 1996
- 3507
-
Evidence of the role of positive bias in diamond growth by hot filament chemical vapor depositionCui, Jingbiao / Fang, Rongchuan et al. | 1996
- 3510
-
Comparison of electrical and luminescence data for the A center in CdTeCastaldini, A. / Cavallini, A. / Fraboni, B. / Fernandez, P. / Piqueras, J. et al. | 1996
- 3513
-
Effect of thermal annealing on optical emission properties of low‐temperature grown AlGaAs/GaAs multiple quantum wellsFeng, W. / Chen, F. / Wang, W. X. / Cheng, W. Q. / Yu, Y. / Huang, Q. / Zhou, J. M. et al. | 1996
- 3516
-
High‐reliability blue‐shifted InGaAsP/InP lasersNoe¨l, J.‐P. / Melville, D. / Jones, T. / Shepherd, F. R. / Miner, C. J. / Puetz, N. / Fox, K. / Poole, P. J. / Feng, Y. / Koteles, E. S. et al. | 1996
- 3519
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A near‐field scanning optical microscopy study of the photoluminescence from GaN filmsLiu, Jutong / Perkins, N. R. / Horton, M. N. / Redwing, J. M. / Tischler, M. A. / Kuech, T. F. et al. | 1996
- 3522
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Far‐infrared emission from parabolically graded quantum wellsMaranowski, K. D. / Gossard, A. C. / Unterrainer, K. / Gornik, E. et al. | 1996
- 3525
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Vacuum ultraviolet reflectivity measurements of thin‐film electroluminescent phosphorsLite, K. / Thuemler, R. L. / Plant, T. K. / Wager, J. F. / Morton, D. C. / Sun, S. S. / Mauch, R. H. et al. | 1996
- 3528
-
Submicron and low-temperature ohmic contacts on d-doped GaAsPiotrowicz, P.J.A. et al. | 1996
- 3528
-
Submicron and low‐temperature ohmic contacts on δ‐doped GaAsPiotrowicz, P. J. A. / England, J. M. C. / Cleaver, J. R. A. / Stanley, C. R. / Holland, M. C. et al. | 1996
- 3531
-
InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriersBolognesi, C. R. / Bryce, J. E. / Chow, D. H. et al. | 1996
- 3534
-
Recrystallization of MeV Si implanted 6H‐SiCHarada, Shinsuke / Ishimaru, Manabu / Motooka, Teruaki / Nakata, Toshitake / Yoneda, Tomoaki / Inoue, Morio et al. | 1996
- 3537
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Schottky barriers and contact resistances on p‐type GaNMori, T. / Kozawa, T. / Ohwaki, T. / Taga, Y. / Nagai, S. / Yamasaki, S. / Asami, S. / Shibata, N. / Koike, M. et al. | 1996
- 3540
-
High‐frequency capacitance resonance of ZnO‐based varistor ceramicsEzhilvalavan, S. / Kutty, T. R. N. et al. | 1996
- 3543
-
PdIn contacts to n‐type and p‐type GaPLin, C. ‐F. / Ingerly, D. B. / Chang, Y. A. et al. | 1996
- 3546
-
Evidence for the role of the surface potential and native oxide on thermal properties of crystalline SiKumar, Shailendra et al. | 1996
- 3549
-
Study of the ground state splitting of N–O complexes in Cz–Si grown under nitrogen atmosphereShi, X. H. / Liu, P. L. / Shen, S. C. et al. | 1996
- 3551
-
Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopyNg, T.‐B. / Janes, D. B. / McInturff, D. / Woodall, J. M. et al. | 1996
- 3554
-
Carrier dynamics in InP with metallic precipitatesMarcinkevicˇius, S. / Krotkus, A. / Adomavicˇius, R. / Leon, R. / Jagadish, C. et al. | 1996
- 3557
-
Rectification properties and interface states of heterojunctions between solid C60 and n‐type GaAsChen, K. M. / Zhang, Y. X. / Qin, G. G. / Jin, S. X. / Wu, K. / Li, C. Y. / Gu, Z. N. / Zhou, X. H. et al. | 1996
- 3560
-
Low resistivity copper germanide on (100) Si for contacts and interconnectionsBorek, M. A. / Oktyabrsky, S. / Aboelfotoh, M. O. / Narayan, J. et al. | 1996
- 3563
-
Ohmic contacts to n‐type silicon‐germaniumNelson, S. F. / Jackson, T. N. et al. | 1996
- 3566
-
High quality GaN–InGaN heterostructures grown on (111) silicon substratesYang, J. W. / Sun, C. J. / Chen, Q. / Anwar, M. Z. / Asif Khan, M. / Nikishin, S. A. / Seryogin, G. A. / Osinsky, A. V. / Chernyak, L. / Temkin, H. et al. | 1996
- 3569
-
Detection of teraherk radiation by hot electron effects in coupled quantum well photodiodesStone, R.J. et al. | 1996
- 3569
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Detection of terahertz radiation by hot electron effects in coupled quantum well photodiodesStone, R. J. / Michels, J. G. / Wong, S. L. / Foxon, C. T. / Nicholas, R. J. / Fox, A. M. et al. | 1996
- 3572
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Disordering of the ZnCdSe single quantum well structure by Cd diffusionMomose, M. / Taike, A. / Kawata, M. / Gotoh, J. / Nakatsuka, S. et al. | 1996
- 3575
-
Transient subpicosecond Raman studies of electron velocity overshoot in an InP p‐i‐n nanostructure semiconductorTsen, K. T. / Ferry, D. K. / Wang, Jye‐Shyang / Huang, Chao‐Hsiung / Lin, Hao‐Hsiung et al. | 1996
- 3578
-
InGaAs metal‐semiconductor‐metal photodetectors with engineered Schottky barrier heightsWohlmuth, W. A. / Arafa, M. / Mahajan, A. / Fay, P. / Adesida, I. et al. | 1996
- 3581
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Effect of interdiffusion of quantum well infrared photodetectorLee, Alex S. W. / Li, E. Herbert et al. | 1996
- 3584
-
A combined Mössbauer and Rutherford backscattering spectroscopy analysis of the influence of nanosized cavities on CoSi2 formationDeweerd, W. et al. | 1996
- 3584
-
A combined Mo¨ssbauer and Rutherford backscattering spectroscopy analysis of the influence of nanosized cavities on CoSi2 formationDeweerd, W. / Moons, R. / Verheyden, J. / Milants, K. / Langouche, G. / Pattyn, H. et al. | 1996
- 3584
-
A combined Moessbauer and Rutherford backscattering spectroscopy analysis of the influence of nanosized cavities on CoSi~2 formationDeweerd, W. / Moons, R. / Verheyden, J. / Milants, K. / Langouche, G. / Pattyn, H. et al. | 1996
- 3587
-
Investigation of transverse Peltier effect on top‐seeded melt textureYBa2Cu3O7−δHe, Z. H. / Ma, Z. G. / Li, Q. Y. / Luo, Y. Y. / Zhang, J. X. / Meng, R. L. / Chu, C. W. et al. | 1996
- 3587
-
Investigation of transverse Peltier effect on top-seeded melt texture YBa2Cu3O7 - dHe, Z.H. et al. | 1996
- 3590
-
Magneto‐optic observation of anomalous Meissner current flow in superconducting thin films with slitsBaziljevich, M. / Johansen, T. H. / Bratsberg, H. / Shen, Y. / Vase, P. et al. | 1996
- 3593
-
NiMn‐pinned spin valves with high pinning field made by ion beam sputteringMao, S. / Gangopadhyay, S. / Amin, N. / Murdock, E. et al. | 1996
- 3596
-
Magnetocaloric effect in La0.67Ca0.33MnOδ and La0.60Y0.07Ca0.33MnOδ bulk materialsZhang, X. X. / Tejada, J. / Xin, Y. / Sun, G. F. / Wong, K. W. / Bohigas, X. et al. | 1996
- 3596
-
Magnetocaloric effect in La0.67Ca0.33MnOd and La0.60Y0.07Ca0.33MnOd bulk materialsZhang, X.X. et al. | 1996
- 3599
-
Effect of trivalent ion composition on the magnetoresistance behavior of LaxNd0.6 - xSr0.40MnO3 - d filmsZhang, Wei et al. | 1996
- 3599
-
Effect of trivalent ion composition on the magnetoresistance behavior of LaxNd0.6−xSr0.40MnO3−δ filmsZhang, Wei / Boyd, Ian W. / Elliott, Martin / Herrenden‐Harkerand, William et al. | 1996
- 3602
-
Piezoelectric properties of Ca‐modified PbTiO3 thin filmsKholkin, A. L. / Calzada, M. L. / Ramos, P. / Mendiola, J. / Setter, N. et al. | 1996
- 3605
-
On the role of field‐induced polarization in the surface electrification of insulatorsCunningham, Samia et al. | 1996
- 3605
-
On the role of field-induced polarization in the surface of insulators electrificationCunningham, Samia et al. | 1996
- 3607
-
Erratum: ‘‘Solitary‐pulse regimes of solid‐state laser additively mode locked by a cascading nonlinearity’’ [Appl. Phys. Lett. 69, 299 (1996)]Mel’nikov, I. V. / Shipulin, A. V. et al. | 1996
- 3608
-
CUMULATIVE AUTHOR INDEX| 1996
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INFORMATION FOR CONTRIBUTORS| 1996