Modeling of SiO"2/Si(100) interface structure by using extended -Stillinger-Weber potential (English)
- New search for: Watanabe, T.
- New search for: Ohdomari, I.
- New search for: Watanabe, T.
- New search for: Ohdomari, I.
In:
THIN SOLID FILMS
;
343-344
, 2
;
370-373
;
1999
-
ISSN:
- Article (Journal) / Print
-
Title:Modeling of SiO"2/Si(100) interface structure by using extended -Stillinger-Weber potential
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Contributors:Watanabe, T. ( author ) / Ohdomari, I. ( author )
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Published in:THIN SOLID FILMS ; 343-344, 2 ; 370-373
-
Publisher:
- New search for: ELSEVIER SEQUOIA SA
-
Publication date:1999-01-01
-
Size:4 pages
-
ISSN:
-
Type of media:Article (Journal)
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Type of material:Print
-
Language:English
- New search for: 530.4275
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 530.4275 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 343-344, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Modelling thin film growth: Monte-Carlo models of fullerite filmsSmith, R. / Richter, A. et al. | 1999
- 5
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Columnar growth structure and evolution of wavy interface morphology in amorphous multilayered thin filmsCzigany, Z. / Radnoczi, G. et al. | 1999
- 9
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Evolution of crystals during vacuum depositionBochkarev, A.A. / Poliakova, V.I. / Pukhovoy, M.V. et al. | 1999
- 13
-
Reactive co-evaporation of Si and Ge in oxygen atmospheresSangrador, J. / Clement, M. / Iborra, E. et al. | 1999
- 17
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Dependence of carbon interatomic bonds on incident ion energy in carbon negative ion beam deposited filmsTsuji, H. / Nakamura, S. / Gotoh, Y. / Ishikawa, J. et al. | 1999
- 21
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Preparation of Mg"xNi thin films by RF-DC coupled magnetron sputteringSuzuki, M. / Tanaka, T. / Kawabata, K. et al. | 1999
- 24
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A hybrid simulation of high pressure sputtering, combining the Monte Carlo method and the diffusive approachNakano, T. / Baba, S. et al. | 1999
- 27
-
Tunneling spectrum characteristic reflecting discrete energy levels in Pb(Tl)Te filmsMurakami, H. / Aoki, R. / Sakai, K. et al. | 1999
- 31
-
Bayesian error analysis of Rutherford backscattering spectraBarradas, N.P. / Jeynes, C. / Jenkin, M. / Marriott, P.K. et al. | 1999
- 35
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Non-destructive chemical analysis of sandwich structures by means of soft X-ray emissionGalnander, B. / Kaambre, T. / Blomquist, P. / Nilsson, E. / Guo, J. / Rubensson, J.-E. / Nordgren, J. et al. | 1999
- 39
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The control of film stress using ionised magnetron sputter depositionChiu, K.F. / Barber, Z.H. / Somekh, R.E. et al. | 1999
- 43
-
The influence of silver on the structure and mechanical properties of (TiAl)-based intermetallicsVieira, M.T. / Trindade, B. / Ramos, A.S. / Fernandes, J.V. / Vieira, M.F. et al. | 1999
- 47
-
Magnetron sputtering of alloy and alloy-based filmsMusil, J. / Vlcek, J. et al. | 1999
- 51
-
The oxidation behaviour of mixed tungsten silicon sputtered coatingsLouro, C. / Cavaleiro, A. et al. | 1999
- 57
-
Effect of DC bias on the deposition rate using RF-DC coupled magnetron sputtering for Mg thin filmsTanaka, T. / Suzuki, M. / Kawabata, K. et al. | 1999
- 60
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Formation of pure thin films by means of self-sputtering depositionHorino, Y. / Chayahara, A. / Tsubouchi, J. / Heck, C. / Kinomura, A. / Abiko, K. et al. | 1999
- 63
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MgO thin film deposition using TVA (thermoionic vacuum arc)Musa, G. / Popescu, A. / Mustata, I. / Salabas, A. / Cretu, M. / Leu, G.F. / Ehrich, H. et al. | 1999
- 67
-
Effect of surface roughness on magnetic properties of Fe films deposited by dual ion beam sputteringIwatsubo, S. / Takahashi, T. / Naoe, M. et al. | 1999
- 71
-
An estimation of optimum Ar ion bombardment energy for good Fe films applying thermal spike effectIwatsubo, S. / Takahashi, T. / Naoe, M. et al. | 1999
- 75
-
The influence of ion bombardment intensity during deposition on nickel films microstructurePopovic, N. / Bogdanov, Z. / Goncic, B. / Rakocevic, Z. / Zec, S. et al. | 1999
- 81
-
Energetic oxygen particles in the reactive sputtering of Zn targets in Ar/O"2 atmospheresTominaga, K. / Murayama, T. / Sato, Y. / Mori, I. et al. | 1999
- 85
-
Pulsed magnetron sputtering of reactive compoundsPosadowski, W.M. et al. | 1999
- 90
-
Reactive pulsed laser deposition of piezoelectric and ferroelectric thin filmsCraciun, F. / Verardi, P. / Guidarelli, G. / Dinescu, M. et al. | 1999
- 94
-
Poole-Frenkel conductivity prior to electroforming in evaporated Au-SiO"x-Au sandwich structuresGould, R.D. / Lopez, M.G. et al. | 1999
- 98
-
Epitaxial growth and transport properties of a-axis oriented Hg-cuprate thin filmsYun, S.H. / Karlsson, U.O. et al. | 1999
- 101
-
Reduction of thin oxide layer on Fe"6"0Ni"4"0 substrates in hydrogen plasmasMozetic, M. / Zalar, A. / Drobnic, M. et al. | 1999
- 105
-
Electrical characterisation of RF sputtered tantalum oxide films rapid thermal annealed with Ar, N"2, O"2 and N"2OChoi, W.K. / Tan, L.S. / Lim, J.Y. / Pek, S.G. et al. | 1999
- 108
-
Electrical and structural properties of rapid thermal annealed RF sputtered silicon oxide filmsChoi, W.K. / Han, K.K. / Chim, W.K. et al. | 1999
- 111
-
Halide chemical vapour deposition of Ta"2O"5Forsgren, K. / Harsta, A. et al. | 1999
- 115
-
The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopantSafi, I. / Howson, R.P. et al. | 1999
- 119
-
Palladium silicide/oxide formations in Pd/SiO"2 complex filmsIchinohe, T. / Masaki, S. / Kawasaki, K. / Morisaki, H. et al. | 1999
- 123
-
Annealing effects of CuInSe"2 films prepared by pulsed laser depositionKuranouchi, S. / Yoshida, A. et al. | 1999
- 127
-
Epitaxial growth of nitride semiconductor films by laser ablationYoshida, A. / Chang, B.S. / Ouyang, K. / Wakahara, A. et al. | 1999
- 130
-
Transparent conductive ZnO:Al films by reactive co-sputtering from separate metallic Zn and Al targetsSelle, B. / Fenske, F. / Fuhs, W. / Schopke, A. / Sieber, I. / Nebauer, E. et al. | 1999
- 134
-
Characterization of mechanical properties of VO"2 thin films on sapphire and silicon by ultra-microindentationJin, P. / Nakao, S. / Tanemura, S. / Bell, T. / Wielunski, L.S. / Swain, M.V. et al. | 1999
- 138
-
An effect of preheat-treatment on the formation of titanium-oxide films by sintering a titanium/silicon-oxide structure in an oxygen atmosphereYokota, K. / Yamada, T. / Sasagawa, T. / Nakamura, K. / Miyashita, F. et al. | 1999
- 142
-
Transparent conductive tin oxide films by photochemical vapour depositionIshida, T. / Mihara, T. / Magara, H. / Tabata, O. / Tatsuta, T. / Tamura, S. et al. | 1999
- 145
-
Preparation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozoneHaga, K. / Katahira, F. / Watanabe, H. et al. | 1999
- 148
-
Investigation of SiO"2 deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilaneHorii, N.M. / Okimura, K. / Shibata, A. et al. | 1999
- 152
-
Reactively sputtered TiO"2"-"x thin films with plasma-emission-controlled departure from stoichiometryRadecka, M. / Zakrzewska, K. / Brudnik, A. / Posadowski, W. et al. | 1999
- 156
-
Novel methods for preparation of ion-exchangeable thin filmsAbe, R. / Ikeda, S. / Kondo, J.N. / Hara, M. / Domen, K. et al. | 1999
- 160
-
Properties of films of multilayered ZnO:Al and ZnO deposited by an alternating sputtering methodTominaga, K. / Murayama, T. / Umezu, N. / Mori, I. / Ushiro, T. / Moriga, T. / Nakabayashi, I. et al. | 1999
- 164
-
Abnormal residual stress state in ZnO films synthesized by planar magnetron sputtering system with two facing targetsHanabusa, T. / Hosoda, H. / Kusaka, K. / Tominaga, K. et al. | 1999
- 168
-
Vanadium oxide thin films deposited onto Cu buffer layer by RF magnetron sputteringMiyazaki, H. / Kamei, M. / Yasui, I. et al. | 1999
- 171
-
Ordering of PVBA on amorphous SiO"2 and Pd(110)Muller, B. / Cai, C. / Bosch, M. / Jager, M. / Bosshard, C. / Gunter, P. / Barth, J.V. / Weckesser, J. / Kern, K. et al. | 1999
- 175
-
Optical and electrical properties of embedded silver nanoparticles at low temperaturesHeilmann, A. / Kreibig, U. / Kiesow, A. / Gruner, M. et al. | 1999
- 179
-
Deep profiles of lithium in electrolytic structures of ITO/WO"3 for electrochromic applicationsPorqueras, I. / Viera, G. / Marti, J. / Bertran, E. et al. | 1999
- 183
-
Study of electrochromic cells incorporating WO"3, MoO"3, WO"3-MoO"3 and V"2O"5 coatingsPapaefthimiou, S. / Leftheriotis, G. / Yianoulis, P. et al. | 1999
- 187
-
Ellipsometric studies on thin silver films epitaxially grown on Si(111)Masten, A. / Wissmann, P. et al. | 1999
- 191
-
Luminescence from hydrogenated amorphous silicon treated in microwave hydrogen plasma, KOH solution, and oxygen atmosphereYokota, K. / Kitagawa, T. / Yamamoto, D. / Nakamura, K. / Miyashita, F. et al. | 1999
- 195
-
Preparation and optical transmittance of titanium hydride (deuteride) films by rf reactive sputteringNakao, S. / Saitoh, K. / Hirahara, T. / Ikeyama, M. / Tazawa, M. / Jin, P. / Niwa, H. / Tanemura, S. / Miyagawa, Y. / Miyagawa, S. et al. | 1999
- 199
-
Preparation of CuIn(S"xSe"1"-"x)"2 thin films by excimer laser ablation from binary compoundsYamamoto, Y. / Yamaguchi, T. / Yoshida, A. et al. | 1999
- 202
-
Effect of a CdS interlayer in thermochromism and photochromism of MoO"3 thin filmsRamirez-Bon, R. / Quevedo-Lopez, M.A. / Orozco-Teran, R.A. / Mendoza-Gonzalez, O. / Zelaya-Angel, O. et al. | 1999
- 206
-
Intermixing in immiscible Co/Ag/Co trilayers under XeCl laser annealingLuby, S. / Majkova, E. / Jergel, M. / D'Anna, E. / Leggieri, G. / Luches, A. / Martino, M. / Majni, G. / Barucca, G. / Mengucci, P. et al. | 1999
- 210
-
Scaling behaviour and evolution of ferromagnetism in epitaxial Fe/GaAs(100) and Fe/InAs(100)Freeland, D.J. / Xu, Y.B. / Kernohan, E.T.M. / Tselepi, M. / Bland, J.A.C. et al. | 1999
- 214
-
Formation of granular-like structure of Ag/Co multilayers by excimer laser irradiationMajkova, E. / Spasova, M. / Jergel, M. / Luby, S. / Okayasu, S. / Luches, A. / Martino, M. / Zubarev, E.N. / Brunel, M. et al. | 1999
- 218
-
Magnetoresistive properties and microstructure of NiFe thin films and NiFe(t)/Cu(s)/NiFe(t) multilayer filmsNeamtu, J. / Coraci, A. / Volmer, M. et al. | 1999
- 222
-
Hard a-C:H films deposited at high deposition ratesMarques, F.C. / Lacerda, R.G. / Vilcarromero, J. / De Lima, M.M.J. et al. | 1999
- 226
-
Influence of diamond crystal orientation on their tribological behaviour under various environmentsSchmitt, M. / Paulmier, D. / Le Huu, T. et al. | 1999
- 230
-
Effect of partial pressure on the internal stress and the crystallographic structure of r.f. reactive sputtered Ti-N filmsInoue, S. / Ohba, T. / Takata, H. / Koterazawa, K. et al. | 1999
- 234
-
New Cr-B hard coatings by r.f.-plasma assisted magnetron sputtering methodZhou, M. / Makino, Y. / Nogi, K. / Nose, M. et al. | 1999
- 238
-
Nanohardness and chemical bonding of boron nitride filmsJankowski, A.F. et al. | 1999
- 242
-
Deposition and characterisation of TiAlBN coatings produced by direct electron-beam evaporation of Ti and Ti-Al-B-N material from a twin crucible sourceMatthews, A. / Rebholz, C. / Leyland, A. et al. | 1999
- 246
-
Resistivity and structural defects of reactively sputtered TiN and HfN filmsAndo, Y. / Sakamoto, I. / Suzuki, I. / Maruno, S. et al. | 1999
- 250
-
Deposition of boron carbon nitride films by dual cathode magnetron sputteringKusano, Y. / Evetts, J.E. / Hutchings, I.M. et al. | 1999
- 254
-
Titanium carbide film deposition by DC magnetron reactive sputtering using a solid carbon sourceKusano, E. / Satoh, A. / Kitagawa, M. / Nanto, H. / Kinbara, A. et al. | 1999
- 257
-
Residual stress in TiN film deposited by arc ion platingKusaka, K. / Hanabusa, T. / Matsue, T. / Miki, Y. / Maitani, E. et al. | 1999
- 261
-
Adhesive characteristics of Fe films deposited by ion beam sputtering with Ar ion bombardmentIwatsubo, S. / Takahashi, T. / Naoe, M. et al. | 1999
- 265
-
The determination of nitrogen in CrN system by RBS and the weight gain techniquePanjan, P. / Navinsek, B. / Zorko, B. / Zalar, A. et al. | 1999
- 269
-
TEA CO"2 laser-induced damage of low-thickness TiN coatingsGakovic, B.M. / Trtica, M.S. / Nenadovic, T.M. / Obradovic, B.J. et al. | 1999
- 273
-
Structure and adhesive properties of TiN films reactively deposited by plasma-free sputteringIwatsubo, S. / Asada, M. / Takahashi, T. / Masugata, K. et al. | 1999
- 277
-
The metastability of porous silicon/crystalline silicon structureKakos, J. / Kucera, M. / Falcony, C. / Bartos, P. / Pincik, E. / Jergel, M. / Bartos, J. et al. | 1999
- 281
-
In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasmaSmets, A.H.M. / Schram, D.C. / Van De Sanden, M.C.M. et al. | 1999
- 285
-
Boron-induced electronic states in hydrogenated amorphous siliconLin, S.-Y. et al. | 1999
- 288
-
Enhancement of crystallization of Si films on quartz substrates by electric fieldsHorita, S. / Inagaki, D. / Sato, K. et al. | 1999
- 292
-
Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVDJeynes, C. / Barradas, N.P. / Toal, S.J. / Reehal, H.S. / Webb, S.J. et al. | 1999
- 295
-
Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometryManfredotti, C. / Fizzotti, F. / Vittone, E. / Ohlidal, I. / Munzar, D. / Hora, J. / Navratil, K. / Franta, D. et al. | 1999
- 299
-
LPCVD deposition of silicon nitride assisted by high density plasmasZambom, L.S. / Mansano, R.D. / Furlan, R. / Verdonck, P. et al. | 1999
- 302
-
Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layersGonzalez, D. / Aragon, G. / Araujo, D. / Garcia, R. et al. | 1999
- 305
-
Electron microscopy study of SiC obtained by the carbonization of Si(111)Pacheco, F.J. / Molina, S.I. / Sanchez, A.M. / Araujo, D. / Garcia, R. / Devrajan, J. / Steckl, A.J. et al. | 1999
- 309
-
Molecular arrangement of organic crystal N,N'-dimethylperylene-3,4,9,10-bis(dicarboximide) studied with metastable de-excitation spectroscopy and atomic force microscopyMochizuki, K. / Hongo, S. / Urano, T. / Ni, J.-P. / Ueda, Y. et al. | 1999
- 313
-
A new type of CO"2 sensor built up with plasma polymerized polyaniline thin filmTakeda, S. et al. | 1999
- 317
-
Effects of reduced growth temperature on crystalline qualities and dopant diffusion in Pb"1"-"xSn"xSe/PbSe layers grown by MBESuzuki, M. / Seki, T. et al. | 1999
- 320
-
Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe"2 target with Na"2SeTanaka, T. / Wakahara, A. / Yoshida, A. / Yamaguchi, T. et al. | 1999
- 324
-
Structure of alumina oxide coatings deposited by impulse plasma methodZdunek, K. / Mizera, J. / Wiencek, P. / Gebicki, W. / Mozdzonek, M. et al. | 1999
- 328
-
X-ray photoemission and photoreflectance study of Au/ultrathin Si/n-GaAs Schottky contacts and hydrogen plasma treated semi-insulating GaAs surfacesIvanco, J. / Jergel, M. / Kusera, M. / Krempasky, M. / Almeida, J. / Margaritondo, G. / Brunel, M. / Pincik, E. et al. | 1999
- 332
-
ZnS wide band gap semiconductor thin film electronic structure sensitivity to Mn impurityVdovenkova, T. / Vdovenkov, A. / Tornqvist, R. et al. | 1999
- 335
-
Composition and properties of thin solid films on porous silicon surfaceMonastyrskii, L. / Lesiv, T. / Olenych, I. et al. | 1999
- 338
-
Deposition and properties of plasma polymer films made from thiophenesHeilmann, A. / Kiesow, A. et al. | 1999
- 342
-
Preparation and Properties of Boron Thin FilmsKamimura, K. / Nagaoka, T. / Shinomiya, T. / Nakao, M. / Onuma, Y. / Makimura, M. et al. | 1999
- 345
-
Blue light emitting laser diodesNakamura, S. et al. | 1999
- 350
-
First principle study of hydrogen passivated Si(100) initial state of oxidationEsteve, A. / Djafari Rouhani, M. / Esteve, D. et al. | 1999
- 354
-
In situ observation of a high-temperature Si(001) surface during SiH"2Cl"2 exposure by photoelectron spectroscopySakamoto, H. / Hori, T. / Enta, Y. / Miyamoto, N. / Takakuwa, Y. / Kato, H. et al. | 1999
- 361
-
Hydrofluoric acid etching of ultra thin silicon oxide film fabricated by high purity ozoneNakamura, K. / Kurokawa, A. / Ichimura, S. et al. | 1999
- 365
-
Lattice strain in oxidized Si nanostructure arrays from X-ray measurementsBlakely, J.M. / Tanaka, S. / Umbach, C.C. / Shen, Q. et al. | 1999
- 370
-
Modeling of SiO"2/Si(100) interface structure by using extended -Stillinger-Weber potentialWatanabe, T. / Ohdomari, I. et al. | 1999
- 374
-
Extremely smooth surface morphologies in N"2/H"2/CH"4 based low energy chemically assisted ion beam etching of InP/GaInAsPCarlstrom, C.F. / Landgren, G. / Anand, S. et al. | 1999
- 378
-
Anisotropic inductively coupled plasma etching of silicon with pure SF"6Verdonck, P. / Massi, M. / Maciel, H.S. / Mansano, R.D. et al. | 1999
- 381
-
Effects of plasma etching on DLC filmsMassi, M. / Mansano, R.D. / Verdonck, P. / Maciel, H.S. / Nishioka, L.N.B.M. / Otani, C. et al. | 1999
- 385
-
Spectroscopic ellipsometry characterization of strained interface region in thermally oxidized Si(111)Paneva, A. / Szekeres, A. / Alexandrova, S. et al. | 1999
- 389
-
Oxidation kinetics of hydrogen-enriched Si(100) and Si(111) surfacesAlexandrova, S. / Szekeres, A. et al. | 1999
- 393
-
Evaluation of the initial oxidation of heavily phosphorus doped silicon surfaces using angle-dependent X-ray photoelectron spectroscopyYang, W.Y. / Iida, M. / Kawamoto, K. / Ying, W.B. / Mizokawa, Y. / Tanahashi, K. / Kamiura, Y. et al. | 1999
- 397
-
Interaction of H"2O clusters with hydrogen-terminated and clean Si(001) surfacesAkagi, K. / Tsukada, M. et al. | 1999
- 401
-
Compositional and structural transition layer studied by the energy loss of O 1s photoelectronsTakahashi, K. / Nohira, H. / Hattori, T. et al. | 1999
- 404
-
Hydrogen adsorption and desorption on SiGe investigated by in situ surface infrared spectroscopyTerashi, M. / Kuge, J. / Niwano, M. / Hirose, F. / Sakamoto, H. et al. | 1999
- 408
-
Influences of deuterium atoms on local bonding structures of SiO"2 studied by HREELSZaima, S. / Nakagawa, Y. / Ikeda, H. / Sato, K. / Higashi, M. / Yasuda, Y. et al. | 1999
- 412
-
On the kinetics of generation of point defects in the Si-SiO"2 systemKarner, T. / Samoson, A. / Abru, U. / Kropman, D. et al. | 1999
- 416
-
Argon plasma sputter etching induced defect levels in strained, epitaxial p-type Si-Ge alloysMamor, M. / Auret, F.D. / Goodman, S.A. / Malherbe, J.B. et al. | 1999
- 420
-
Radiation enhanced growth rates during plasma oxidation of siliconBuiu, O. / Taylor, S. et al. | 1999
- 423
-
REM studies of the roughening transitions of Si high index surfacesSuzuki, T. / Minoda, H. / Yagi, K. / Tanishiro, Y. et al. | 1999
- 427
-
Real-time diagnostics of growth of silicon-germanium alloys on hydrogen-terminated and oxidized silicon (111) surfaces by spectroscopic ellipsometryHess, P. / Opahle, I. et al. | 1999
- 433
-
Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealingMartil, I. / Martinez, F.L. / Gonzalez-Diaz, G. / Bernal-Oliva, A.M. / Gonzalez-Leal, J.M. / Marquez, E. et al. | 1999
- 437
-
Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperatureDel Prado, A. / Martil, I. / Gonzalez-Diaz, G. / Fernandez, M. et al. | 1999
- 441
-
Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide filmsHan, L.J. / Ong, T.Y. / Prakash, S. / Chua, L.G. / Choi, W.K. / Tan, K.L. / Tan, L.S. / Loh, F.C. et al. | 1999
- 445
-
Hydrogen in amorphous germanium-carbonVilcarromero, J. / Marques, F.C. et al. | 1999
- 449
-
Optical and electrical characterisation of Ta"2O"5 thin films for ionic conduction applicationsPorqueras, I. / Marti, J. / Bertran, E. et al. | 1999
- 453
-
Effect of deposition conditions of buffer layer on the characteristics of (Ba,Sr)TiO"3 thin films fabricated by a self-buffering processKil, D.-S. / Joo, S.-K. / Lee, B.-I. et al. | 1999
- 457
-
Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxaneFujii, T. / Hiramatsu, M. / Nawata, M. et al. | 1999
- 461
-
Relationship of grain nanostructure and orientation in whisker growth on aluminum thin films on glass substratesTakatsuija, H. / Tsujimoto, K. / Kuroda, K. / Saka, H. et al. | 1999
- 465
-
The influence of cooling water flowing in the sputtering target on aluminum based thin film nanostructure deposited on glass substratesTakatsuji, H. / Tsuji, S. / Kuroda, K. / Saka, H. et al. | 1999
- 469
-
Electrical properties of polymer/Si heterojunctionsMusa, I. / Eccleston, W. et al. | 1999
- 476
-
Excitation energy dependence of luminescent sol-gel organically modified silicatesSa Ferreira, R.A. / Carlos, L.D. / De Zea Bermudez, V. et al. | 1999
- 481
-
Plasmon loss features of germanium nanocrystals fabricated by the cluster beam evaporation techniqueSato, S. / Nozaki, S. / Morisaki, H. et al. | 1999
- 484
-
Photoinduced changes of the structure and index of refraction of amorphous As-S filmsPolak, Z. / Frumari, M. / Frumarova, B. et al. | 1999
- 488
-
Thermally and photoinduced changes of structure and optical properties of As-Ga-S amorphous films and glassesFrumar, M. / Jedelsky, J. / Polak, Z. / Cernosek, Z. et al. | 1999
- 492
-
Kelvin probe study of metastable states during initial oxygen adsorption dynamics on Si(111) 7 x 7Petermann, U. / Baikie, I.D. / Lagel, B. et al. | 1999
- 495
-
Recent understandings of elementary growth processes in MBE of GaAsNishinaga, T. / Yamashiki, A. et al. | 1999
- 500
-
Optimizing GaSb(111) and GaSb(001) surfaces for epitaxial film growthSolomon, J.S. / Petry, L. / Tomich, D.H. et al. | 1999
- 504
-
Homoepitaxial growth of ZnTe by synchrotron radiation using metalorganic sourcesNishio, M. / Enoki, T. / Mitsuishi, Y. / Guo, Q. / Ogawa, H. et al. | 1999
- 508
-
Ohmic contacts to p-type ZnTe using electroless PdNishio, M. / Guo, Q. / Ogawa, H. et al. | 1999
- 512
-
Effect of dopant flow rate upon photoluminescence properties in aluminum-doped ZnTe layers grown by MOVPENishio, M. / Guo, Q. / Ogawa, H. et al. | 1999
- 516
-
Preparation and characterization of (Cd,Zn)S thin films by chemical bath deposition for photovoltaic devicesYamaguchi, T. / Yamamato, Y. / Tanaka, T. / Yoshida, A. et al. | 1999
- 520
-
Selective electrochemical profiling of threading defects in mismatched heteroepitaxial systemsNemcsics, A. / Riesz, F. / Dobos, L. et al. | 1999
- 524
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Effects of nitrogen/argon ratio on composition and structure of InN films prepared by r.f. magnetron sputteringGuo, Q. / Shingai, N. / Mitsuishi, Y. / Nishio, M. / Ogawa, H. et al. | 1999
- 528
-
Surface cleaning and nitridation of compound semiconductors using gas-decomposition reaction in Cat-CVD methodIzumi, A. / Masuda, A. / Matsumura, H. et al. | 1999
- 532
-
Instability of 2D Ge layer near the transition to 3D islands on Si(111)Shklyaev, A.A. / Shibata, M. / Ichikawa, M. et al. | 1999
- 537
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Point defects, dopant atoms, and compensation effects in CdSe and CdS cleavage surfacesSiemens, B. / Domke, C. / Urban, K. / Ebert, P. et al. | 1999
- 541
-
Doping and electrical characteristics of in situ heavily B-doped Si"1"-"xGe"x films epitaxially grown using ultraclean LPCVDMoriya, A. / Sakuraba, M. / Matsuura, T. / Murota, J. et al. | 1999
- 545
-
Structural analysis of epitaxial TiAg/MgO superlattices prepared by multi-evaporationKado, T. / Nakamura, K. / Matsuura, M. et al. | 1999
- 550
-
Initial stage oxidation at an unpaired dangling bond site on a Si(100)-2 x 1-H surfaceKajiyama, H. / Heike, S. / Wada, Y. / Hashizume, T. et al. | 1999
- 554
-
Incorporation of Ga metalorganic precursors during transients at the start of GaAs growth in CBEHill, D. / Farrell, T. / Bullough, T.J. et al. | 1999
- 558
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Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBEGutierrez, M. / Gonzalez, D. / Aragon, G. / Garcia, R. / Sanchez, J.J. / Izpura, I. / Hopkinson, M. et al. | 1999
- 562
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Effects of initial surface states on formation processes of epitaxial CoSi"2(100) on Si(100)Hayashi, Y. / Matsuoka, Y. / Ikeda, H. / Yasuda, Y. / Zaima, S. et al. | 1999
- 567
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The (3 x 3) reconstruction and its evolution during the nitridation of GaAs(001)Lu, J. / Westwood, D.I. / Haworth, L. / Hill, P. / Macdonald, J.E. et al. | 1999
- 571
-
Low temperature growth of p-type crystalline silicon films by ECR plasma CVDReehal, H.S. / Wang, L. et al. | 1999
- 575
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Raman and reflection anisotropy spectroscopic studies of GaN and AlN growth on GaAs(100)Chalker, P.R. / Joyce, T.B. / Farrell, T. / Johnston, C. / Crossley, A. / Eccles, J. et al. | 1999
- 579
-
Bi surfactant mediated epitaxy of Ge on Si(111)Horn-Von Hoegen, M. / Meyer Zu Heringdorf, F.J. / Kammler, M. / Schaeffer, C. / Reinking, D. / Hofmann, K.R. et al. | 1999
- 583
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XPS and TOFSIMS studies of shallow Si/Si"1"-"xGe"x/Si layersConard, T. / Loo, R. / Verheyen, P. / Vandervorst, W. / Caymax, M. / De Witte, H. / Gijbels, R. et al. | 1999
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Pbs-Cds bilayers prepared by the chemical bath deposition technique at different reaction temperaturesZelava-Angel, O. / Orozco-Teran, R.A. / Quevedo-Lopez, M.A. / Mendoza-Gonzaez, O. / Sotelo-Lerma, M. / Ramirez-Bon, R. et al. | 1999
- 591
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Piezoelectric photoacoustic spectra of CuInSe"2 thin film grown by molecular beam epitaxyYoshino, K. / Fukuyama, A. / Yokoyama, H. / Meada, K. / Fons, P.J. / Yamada, A. / Ikari, T. / Niki, S. et al. | 1999
- 594
-
Low temperature epitaxial growth of CeO"2(110) layers on Si(100) using electron beam assisted evaporationInoue, T. / Yamamoto, Y. / Satoh, M. et al. | 1999
- 598
-
Co-sputtered Ru-Ti alloy electrodes for DRAM applicationsLee, M.K. / Chan, S.H. / Leu, C.C. / Huang, T.Y. / Sze, S.M. / Horng, R.H. / Wuu, D.S. / Wu, L.H. / Wei, S.C. et al. | 1999
- 602
-
Implantation of silicon using the boron cluster BF"2Webb, R. / Smith, R. / Harrison, M. et al. | 1999
- 605
-
Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsetsCammack, D.S. / Clark, S.A. / Pan, M. / Wilks, S.P. / Dunstan, P.R. / Pritchard, M. / Williams, R.H. et al. | 1999
- 609
-
Cross-sectional specimen preparation from ICs downside for SEM and TEM-failure analyses using focused ion beam etchingAltmann, F. / Katzer, D. et al. | 1999
- 612
-
Surfactant effect of atomic hydrogen on silicide-formation of nickel on Si(110) surfacesUeda, K. / Uskirosako, T. / Yoshimura, M. et al. | 1999
- 616
-
Wide bandgap semiconductor materials for high temperature electronicsChalker, P.R. et al. | 1999
- 623
-
The effect of hydrogen on the electronic properties of CVD diamond filmsLooi, H.J. / Whitfield, M.D. / Jackman, R.B. / Foord, J.S. et al. | 1999
- 627
-
Influence of B- and N-doping levels on the quality and morphology of CVD diamondAfzal, A. / Rego, C.A. / Ahmed, W. / Eccles, A.J. / Steele, T.A. / May, P.W. / Leeds, S.M. et al. | 1999
- 632
-
Bond formation in ion beam synthesised amorphous gallium nitrideAlmeida, S.A. / Silva, S.R.P. / Sealy, B.J. / Watts, J.F. et al. | 1999
- 637
-
Characterization of ohmic and Schottky contacts on SiCKakanakova-Georgieva, A. / Noblanc, O. / Arnodo, C. / Cassette, S. / Brylinski, C. / Marinova, T. et al. | 1999
- 642
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A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputteringHorng, R.H. / Wuu, D.S. / Wei, S.C. / Chan, S.H. / Kung, C.Y. et al. | 1999
- 646
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Growth of GaAs"1"-"xN"x on GaAs(100) by chemical beam epitaxyAardahl, C.L. / Yun, H.K. / Pearsall, T.P. / Qian, M. / Fong, H. / Sarikaya, M. / Rogers, J.W.J. et al. | 1999
- 650
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Low-temperature epitaxial growth of cubic SiC thin films on Si(111) using supersonic molecular jet of single source precursorsBoo, J.-H. / Ustin, S.A. / Ho, W. et al. | 1999
-
14th International Vacuum Congress (IVC-14), 10th International Conference on Solid Surfaces (ICSS-10), 5th International Conference on Nanometre-scale Science and Technology (NANO-5) and the 10th International Conference on Quantitative Surface Analysis (QSA-10); International Convention Centre, Birmingham UK, 31st August to 4th September 1998: PrefaceJackman, R.B. / Petty, M. et al. | 1999