InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy (English)
- New search for: Murtagh, M.
- New search for: Beechinor, J.T.
- New search for: Cordero, N.
- New search for: Kelly, P.V.
- New search for: Crean, G.M.
- New search for: Bland, S.W.
- New search for: Murtagh, M.
- New search for: Beechinor, J.T.
- New search for: Cordero, N.
- New search for: Kelly, P.V.
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In:
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B
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66
, 1-3
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185 - 188
;
1999
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ISSN:
- Article (Journal) / Print
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Title:InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy
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Contributors:Murtagh, M. ( author ) / Beechinor, J.T. ( author ) / Cordero, N. ( author ) / Kelly, P.V. ( author ) / Crean, G.M. ( author ) / Bland, S.W. ( author )
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Published in:MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 66, 1-3 ; 185 - 188
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Publisher:
- New search for: ELSEVIER
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Publication date:1999-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 620.11
- Further information on Dewey Decimal Classification
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Classification:
DDC: 620.11 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 66, Issue 1-3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Latest developments in vertical gradient freeze (VGF) technology: GaAs, InP, and GaPYoung, M. / Liu, X. / Zhang, D. / Zhu, M. / Hu, X.Y. et al. | 1999
- 7
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Photoelastic characterization of residual strain in GaAs wafers annealed in holders of different geometryHerms, M. / Fukuzawa, M. / Yamada, M. / Klober, J. / Zychowitz, G. / Niklas, J.R. et al. | 1999
- 11
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X-Ray characterisation of indium phosphide substratesMoore, C.D. / Tanner, B.K. et al. | 1999
- 15
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SEM and AFM characterisation of high-mesa patterned InP substrates prepared by wet etchingElias, P. / Cambel, V. / Hasenohrl, S. / Hudek, P. / Novak, J. et al. | 1999
- 21
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Contactless mapping of mesoscopic resistivity variations in semi-insulating substratesStibal, R. / Wickert, M. / Hiesinger, P. / Jantz, W. et al. | 1999
- 26
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Large area GaN substratesKryliouk, O. / Reed, M. / Dann, T. / Anderson, T. / Chai, B. et al. | 1999
- 30
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Point defect characterization of GaN and ZnOLook, D.C. / Reynolds, D.C. / Fang, Z.-Q. / Hemsky, J.W. / Sizelove, J.R. / Jones, R.L. et al. | 1999
- 33
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Characterisation of defects and piezoelectric fields in InGaN/GaN layers by transmission electron microscopyCherns, D. / Barnard, J. / Mokhtari, H. et al. | 1999
- 39
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The upper limits of useful n- and p-type doping in GaAs and AlAsNewman, R.C. et al. | 1999
- 46
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Study of dopant-dependent band gap narrowing in compound semiconductor devicesPalankovski, V. / Kaiblinger-Grujin, G. / Selberherr, S. et al. | 1999
- 50
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Hydrogenation of buried passive sections in photonic integrated circuits: a tool to improve propagation losses at ~1.56 @mmRao, E.V.K. / Gottesman, Y. / Allovon, M. / Theys, B. / Sik, H. / Slempkes, S. et al. | 1999
- 55
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Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfacesKoumetz, S. / Marcon, J. / Gautier, S. / Ketata, K. / Ketata, M. / Dubois, C. et al. | 1999
- 58
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Preparation and characterization of n- and p-type ytterbium doped InP epitaxial layersNovotny, J. / Prochazkova, O. / Zdansky, K. / Zavadil, J. / Srobar, F. et al. | 1999
- 63
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Effect of rare earth addition on liquid phase epitaxial InP-based semiconductor layersProchazkova, O. / Novotny, J. / Zavadil, J. / Zd'ansky, K. et al. | 1999
- 67
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Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition areaVasil'ev, V.I. / Nikitina, I.P. / Smirnov, V.M. / Tret'yakov, D.N. et al. | 1999
- 70
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Growth of Hg"1"-"x(Cd"1"-"yZn"y)"xTe epilayers on (100) Cd"1"-"yZn"yTe/GaAs substrates by ISOVPEKoo, B.H. / Ishikawa, Y. / Wang, J.F. / Isshiki, M. et al. | 1999
- 75
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InGaAs layers of high quality grown on patterned GaAs substrates with trenchesIida, S. / Hayakawa, Y. / Koyama, T. / Kumagawa, M. et al. | 1999
- 79
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Real-time strain monitoring in thin film growth: cubic boron nitride on Si (100)Litvinov, D. / Clarke, R. / Taylor II, C.A. / Barlett, D. et al. | 1999
- 83
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In situ characterisation of III-V substrate oxide desorption by surface photoabsorption in MOVPEAllwood, D.A. / Mason, N.J. / Walker, P.J. et al. | 1999
- 88
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Optimisation of experimental conditions for variable angle spectroscopic ellipsometry analysis. Application to GaAs/(Al,Ga)As quantum well characterisationColard, S. / Mihailovic, M. et al. | 1999
- 92
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Comparative investigation of MBE and MOCVD PMHEMT structures for high frequency applicationsLagadas, M. / Michelakis, K. / Kayambaki, M. / Panayotatos, P. et al. | 1999
- 97
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Study of silicon-doped VGF-GaAs by DSL-etching and LVM spectroscopy and the influence of B"2O"3 coatingHannig, C. / Schwichtenberg, G. / Buhrig, E. / Gartner, G. et al. | 1999
- 102
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Electrical and morphological properties of ordered In"xGa"1"-"xPNovak, J. / Hasenohrl, S. / Cambel, V. / Kucera, M. / Wehmann, H.-H. / Wullner, D. et al. | 1999
- 106
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Characterisation of deep level trap centres in 6H-SiC p-n junction diodesGhaffour, K. / Lauer, V. / Souifi, A. / Guillot, G. / Raynaud, C. / Ortolland, S. / Iocatelli, M.L. / Chante, J.P. et al. | 1999
- 111
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Higher yield of 1.55 @mm DFB lasers through MOVPE growth under N"2 atmosphere with excellent homogeneityKuphal, E. / Jochum, S. / Piataev, V. / Hansmann, S. / Burkhard, H. et al. | 1999
- 118
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Assessment of carbon concentrations in polycrystalline and monocrystalline gallium arsenide using SSMS, FTIR, and CPAAWiedemann, B. / Alt, H.C. / Bethge, K. / Meyer, J.D. / Michelmann, R.W. et al. | 1999
- 123
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Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on (111)A GaAsCho, S. / Sanz-Hervas, A. / Kovalenkov, O.V. / Majerfeld, A. / Villar, C. / Kim, B.W. et al. | 1999
- 126
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An optical study of the properties of (Al"xGa"1"-"x)"0"."5"1In"0"."4"9P epitaxial layers with varying composition, hydrostatic pressure and GaAs substrate orientationJones, G. / Cain, N. / Peggs, D.W. / Petrie, R.P. / Bland, S.W. / Mowbray, D.J. et al. | 1999
- 131
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Luminescence imaging - a well-established technique to study material- and device-related problemsBaeumler, M. / Fitz, C. / Weinberg, U. / Wagner, J. / Jantz, W. et al. | 1999
- 141
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Photoreflectance as a non-destructive, room-temperature technique for routine testing of PM-HEMT structuresAndroulidaki, M. / Lagadas, M. / Michelakis, K. / Panayotatos, P. et al. | 1999
- 146
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Applying slow positrons to the study of ion implantation induced defects in GaAsKnights, A.P. / Malik, F. / Coleman, P.G. / Gwilliam, R. / Sealy, B.J. et al. | 1999
- 151
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Multiple quantum well GaAs/AlGaAs solar cells: transport and recombination properties by means of EBIC and cathodoluminescenceAraujo, D. / Romero, M.J. / Morier-Genoud, F. / Garca, R. et al. | 1999
- 157
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New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructuresMosser, V. / Callen, O. / Kobbi, F. / Adam, D. / Grattepain, C. / Draidia, N. et al. | 1999
- 162
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Assessment of layer structures for GaInP/GaAs-heterojunction bipolar transistorsRichter, E. / Brunner, F. / Gramlich, S. / Hahle, S. / Mai, M. / Zeimer, U. / Weyers, M. et al. | 1999
- 174
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Material issues in AlGaInP red-emitting laser diodesBlood, P. et al. | 1999
- 181
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Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substratesMichelakis, C. / Georgakilas, A. / Androulidaki, M. / Harteros, K. / Deligeorgis, G. / Calamiotou, M. / Peiro, F. / Becourt, N. / Cornet, A. / Halkias, G. et al. | 1999
- 185
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InGaP/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopyMurtagh, M. / Beechinor, J.T. / Cordero, N. / Kelly, P.V. / Crean, G.M. / Bland, S.W. et al. | 1999
- 189
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Failure analysis of heavily proton irradiated p^+-n InGaP solar cells by EBIC and cathodoluminescenceRomero, M.J. / Walters, R.J. / Araujo, D. / Garca, R. et al. | 1999
- 194
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Non-alloyed ohmic contacts using MOCVD grown n^+-In"xGa"1"-"xAs on n-GaAsAmin, F.A. / Rezazadeh, A.A. / Bland, S.W. et al. | 1999
- 199
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Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxyVogt, A. / Simon, A. / Weber, J. / Hartnagel, H.L. / Schikora, J. / Buschmann, V. / Fuess, H. et al. | 1999
- 203
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Microscopic investigation of intimate metal-In"xGa"1"-"xAs dot contacts obtained at room and cryogenic temperaturesVila, A. / Peiro, F. / Cornet, A. / Clark, S.A. / Wilks, S.P. / Elliott, M. et al. | 1999
- 209
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Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasersFrigeri, C. / Baeumler, M. / Migliori, A. / Muller, S. / Weyher, J.L. / Jantz, W. et al. | 1999