PROCESS VARIATIONS IN USE FOR THE FIRST GENERATIONS OF FRAM® MEMORY PRODUCTS (English)
- New search for: Davenport, T.
- New search for: Mitra, S.
- New search for: Davenport, T.
- New search for: Mitra, S.
In:
INTEGRATED FERROELECTRICS
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31
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213-232
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2001
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ISSN:
- Article (Journal) / Print
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Title:PROCESS VARIATIONS IN USE FOR THE FIRST GENERATIONS OF FRAM® MEMORY PRODUCTS
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Contributors:Davenport, T. ( author ) / Mitra, S. ( author )
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Published in:INTEGRATED FERROELECTRICS ; 31 ; 213-232
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Publisher:
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Publication date:2001-01-01
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Size:20 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 31
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Excimer laser ablation processed ferroelectric and antiferroelectric thin filmsKrupanidhi, S. B. / Saha, S. / Bhattacharyya, S. / Bharadwaja, S. S. N. et al. | 2000
- 9
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Guest editorialWaser, Rainer / Wouters, Dirk / Whatmore, Roger et al. | 2000
- 13
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Growth and characterization of epitaxial SrBi2Ta2O9 films on (110) SrTiO3 substratesGarg, Ashish / Dunn, Steven / Barber, Zoe H. et al. | 2000
- 23
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Preparation of SrBi2(Ta, Nb)2O9 thin films by rf sputtering for ferroelectric memory productionMasuda, Takeshi / Miyaguchi, Yusuke / Suu, Koukou / Sun, Shan et al. | 2000
- 35
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Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser depositionCho, Choong-Rae / Grishin, Alex / Moon, Byung-Moo et al. | 2000
- 47
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Properties of reactively sputtered IrOx for PZT electrode applicationsFox, Glen R. / Sun, Shan / Takamatsu, Tomohiro et al. | 2000
- 57
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Low temperature processing and chacterization of SrBi2Nb2o9 thin films grown by pulsed laser ablationBhattacharyya, S. / Krupanidhi, S. B. et al. | 2000
- 69
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Crystalline and optical properties of PLZT films prepared by pulsed laser depositionKao, Jiann-Shiun / Tsai, Chuen-Horng / Jamn, Gwo / Liu, Kuo-Shung / Lin, I-Nan et al. | 2000
- 77
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Deposition of large-area graded (Pb1-xLax)TiO3 thin films by pulsed laser depesitionJamn, Gwo / Liu, Kuo-Shung / Lin, I-Nan et al. | 2000
- 87
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Influence of process conditions on the ferroelectric characteristics of SrBi2Ta2O9 films prepared by rf magnetron sputteringChen, Yi-Chou / Lu, Chung-Hsin et al. | 2000
- 97
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Growth of MgTiO3 thin films by pulsed laser deposition and their electrical propertiesKang, Shinchung / Lim, Wangkyu / Lee, Jaichan et al. | 2000
- 105
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Lithium niobate thick films grown by rf sputtering: Correlation between optical analysis and transmission electron microscopy observationsLansiaux, X. / Dogheche, E. / Remiens, D. et al. | 2000
- 117
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Novel diffusion control process using ultra thin buffer layer for MFIS memoryOtsuka, Takashi / Ueda, Michihito / Nishikawa, Takashi / Iijima, Kenji / Morita, Kiyoyuki et al. | 2000
- 129
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Characterization of lead cation-incorporated strontium bismuth tantalate ferroelectricsLu, Chung-Hsin / Chen, Yi-Chou et al. | 2000
- 139
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Nano-phase ferroelectric cells for Gbit memoriesScott, J. F. et al. | 2000
- 149
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Single-grained PZT thin films for high level FRAM integration—fabrication and characterizationLee, Jang-Sik / Lee, Byung-Il / Joo, Seung-Ki et al. | 2000
- 163
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Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devicesShin, Hyunjung / Woo, Jungwon / Hong, Seungbum / Jeon, Jong Up / Pak, Y. Eugene / No, Kwangsoo et al. | 2000
- 173
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Effect of ion damage on the crystallization of PZT thin filmsPark, Eung-Chul / Lee, Jang-Sik / Park, Jung-Ho / Lee, Byung-Il / Joo, Seung-Ki et al. | 2000
- 183
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Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5nb0.5)O3 and Pb(Mg1/3Nb2/3)O3 films produced by RF-sputtering from ceramic targetsZiebert, Carlos / Sternberg, Andris / Schmitt, Heinz / Ehses, Karl-Heinz / Kruger, Jan K. et al. | 2000
- 195
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Atomic-scale microstructures of SrBi2Ta2O9 (SBT) ferroelectric thin films prepared by MOD and PLD for ferams applicationsZhu, Xinhua / Zhu, Tao / Li, Aidong / Yu, Tao / Liu, Zhguo / Ming, Naiben et al. | 2000
- 205
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Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memoriesNorga, Gerd J. / Wouters, Dirk J. et al. | 2000
- 213
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Process variations in use for the first generations of FRAM® memory productsDavenport, Tom / Mitra, Sanjay et al. | 2000
- 233
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Patterning of noble metal electrodes and oxygen barriers by CMPSchnabel, R. F. / Beitel, G. / Mainka, G. / Sanger, A. / Bosk, P. / Chen, Z. / Small, R. / Dehm, C. et al. | 2000
- 241
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Application of fluorinated SiO2 interlayer dielectrics for ferroelectric memoryPark, Youngsoo / Chung, Ilsub et al. | 2000
- 251
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Fabrication of double metal feram without degradation of remnant polarization by using Ir/IrOx capacitor contact barrier layerKweon, Soon Yong / Yeom, Seung Jin / Lee, Sahang Kyoo / Yu, Yong Sik / Pyun, Deuk Soo / Kim, Cheong Tae et al. | 2000
- 261
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Mechanisms of Pb(zr0.53Ti0.47)O3 thin film etching with ECR/RF reactorBaborowski, J. / Muralt, P. / Ledermann, N. / Colla, E. / Seifert, A. / Gentil, S. / Setter, N. et al. | 2000
- 273
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Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)Hartner, Walter / Schindler, Gunther / Bosk, Peter / Gabric, Zonimir / Kastner, Markus / Beitel, Gerhard / Mikolajick, Thomas / Dehm, Christine / Mazure, Carlos et al. | 2000
- 285
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Pulse-extended excimer laser annealing of lead zirconate titanate thin filmsDonohue, P. P. / Todd, M. A. et al. | 2000
- 297
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Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitorChoi, Eun-Suck / Shin, Woong-Chul / Suh, Tae-Seok / Park, Sang-Shik / Yoon, Soon-Gil et al. | 2000
- 305
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Mocvd growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substratesMoret, M. P. / Rossinger, S. A. / Hageman, P. R. / Misat, S. I. / Devillers, M. A. C. / Van Der Linden, H. / Haverkamp, E. / Corbeek, W. H. M. / Larsen, P. K. et al. | 2000
- 315
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Oxidation resistance of TaSiN diffusion barriersLetendu, F. / Hugon, M. C. / Desvignes, J. M. / Agius, B. / Vickridge, I. / Kim, D. J. / Kingon, A. I. et al. | 2000
- 323
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Degradation of Pt/PLZT/Pt capacitors caused by hydrogen in interlayer dielectricsSuenaga, Kazufumi / Ogata, Kiyoshi / Waki, Hiromichi / Mori, Mitsuhiro et al. | 2000
- 333
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Forming gas annealing effects on the microstructure and ferroelectricity of SrBi2Ta2O9 thin films prepared by metalorganic decompositionYu, Tao / Wang, Dong-Sheng / Wu, Di / Li, Ai-Dong / Zhu, Xin-Hua / Hu, An / Liu, Zhi-Guo / Ming, Nai-Ben et al. | 2000
- 341
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Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealingHartner, Walter / Bosk, Peter / Schindler, Gunther / Schroeder, Herbert / Waser, Rainer / Dehm, Christine / Mazure, Carlos et al. | 2000
- 351
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A novel diffusion barrier using oxygen stopping layer for high density FRAMSong, Yoon J. / Kim, H. H. / Lee, S. Y. / Jung, D. J. / Koo, B. J. / Chang, N. W. / Kim, C. J. / Kim, Kinam et al. | 2000
- 359
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Electrical characterizations of MgTiO3 thin films grown on SiAhn, Soonhong / Lee, Younghun / Roh, Yonghan / Kang, Shinchung / Lee, Jaichan et al. | 2000
- 367
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Effects of Ti/Ir top electrodes of PZT capacitors on the hydrogen related degradationKim, Jiyoung / Koo, June-Mo / Kim, Tae Ho / Bang, Ilhwan et al. | 2000