Defect density in non-selective and selective Si/SiGe structures (English)
- New search for: Menon, C.
- New search for: Bentzen, A.
- New search for: Landgren, G.
- New search for: Radamson, H. H.
- New search for: Menon, C.
- New search for: Bentzen, A.
- New search for: Landgren, G.
- New search for: Radamson, H. H.
In:
JOURNAL OF CRYSTAL GROWTH
;
237-239
;
259-263
;
2002
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ISSN:
- Article (Journal) / Print
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Title:Defect density in non-selective and selective Si/SiGe structures
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Contributors:Menon, C. ( author ) / Bentzen, A. ( author ) / Landgren, G. ( author ) / Radamson, H. H. ( author )
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Published in:JOURNAL OF CRYSTAL GROWTH ; 237-239 ; 259-263
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Publisher:
- New search for: ELSEVIER SCIENCE
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Publication date:2002-01-01
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Size:5 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 548
- Further information on Dewey Decimal Classification
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Classification:
DDC: 548 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 237-239
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
First-principle calculations for mechanisms of semiconductor epitaxial growthOshiyama, A. et al. | 2002
- 8
-
Applications of morphological stability theoryCoriell, S. R. / McFadden, G. B. et al. | 2002
- 14
-
Statistical mechanics of vicinal surface with adsorptionAkutsu, N. / Akutsu, Y. / Yamamoto, T. et al. | 2002
- 21
-
Metal adsorption induced faceting on a Si(hhm) surface where m/h=1.4-1.5Minoda, H. et al. | 2002
- 28
-
Step dynamics on growing silicon surfaces observed by ultrahigh vacuum scanning electron microscopyHomma, Y. / Finnie, P. et al. | 2002
- 35
-
In situ observation of initial homoepitaxial growth on the Si(111) 7x7 surface using scanning tunnelling microscopyShimada, W. / Tochihara, H. et al. | 2002
- 39
-
Non-equilibrium shape of two-dimensional islands: kinetic modeling of morphological changesBalykov, L. N. / Kitamura, M. / Maksimov, I. L. et al. | 2002
- 43
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Step bunching induced by drift of adatoms with anisotropic surface diffusionSato, M. / Uwaha, M. / Saito, Y. et al. | 2002
- 47
-
Sound-induced melting of solid 4He in a superfluidOkumura, Y. / Maekawa, M. / Suzuki, Y. / Nomura, R. / Okuda, Y. et al. | 2002
- 51
-
Effective distribution coefficients and growth rates of a binary dilute solid solution controlled by kink kinetics and volume diffusionMatsumoto, N. / Kitamura, M. et al. | 2002
- 55
-
Rapid formation of nanocrystalline apatiteSarig, S. / Kahana, F. et al. | 2002
- 60
-
Crystal growth kinetics of pentacadmium dihydrogen tetrakis(phosphate) tetrahydrate in solution at 37degreeCLundager Madsen, H. E. / Christensen, B. T. et al. | 2002
- 65
-
Transport-kinetical phenomena in nanotube growthLouchev, O. A. et al. | 2002
- 70
-
The study of impurities effect on the growth and nucleation kinetics of potassium dihydrogen phosphatePodder, J. et al. | 2002
- 76
-
Meta-stable condensation induced by collisions with rare-gas atoms at a substrate surface from a plasmaImamura, N. / Sakaguchi, J. / Asatani, S. / Hashiguchi, S. / Obara, K. et al. | 2002
- 81
-
Effects of gravity on pattern formation in directional growth of ice crystalsNagashima, K. / Furukawa, Y. et al. | 2002
- 86
-
Habit changes of NaBrO3 crystals grown from aqueous solution doped with sodium acetateSone, M. / Inoue, T. / Yanagiya, S. i. / Mori, A. et al. | 2002
- 90
-
Influence of the growth rate on the microstructure of a Nb-Al-Ni ternary eutecticRios, C. T. / Milenkovic, S. / Gama, S. / Caram, R. et al. | 2002
- 95
-
Effect of the growth parameters on the Ni-Ni3Si eutectic microstructureMilenkovic, S. / Caram, R. et al. | 2002
- 101
-
Heterogeneous 2D nucleation-induced surface instabilityLiu, X. Y. et al. | 2002
- 106
-
Pattern formation and transformation by self-epitaxial nucleation and growthLiu, X. Y. et al. | 2002
- 111
-
Striped phases in thin layers: simulation and observationvan der Eerden, J. P. / Snel, M. M. / Makkinje, J. / van Dijk, A. D. / Rinia, H. A. et al. | 2002
- 116
-
Theoretical investigations of thermodynamic stability for Si1-x-yGexCyIto, T. / Kangawa, Y. et al. | 2002
- 121
-
Theoretical investigation of migration of group V adatoms on GaAs(001) surfaceSeino, K. / Ishii, A. / Aisaka, T. et al. | 2002
- 125
-
Phase-field model of dendritic growthSuzuki, T. / Ode, M. / Kim, S. G. / Kim, W. T. et al. | 2002
- 132
-
Pattern formation in the crystallization of ascorbic acidUesaka, H. / Kobayashi, R. et al. | 2002
- 138
-
Phase field modeling of shallow cells during directional solidification of a binary alloyBi, Z. / Sekerka, R. F. et al. | 2002
- 144
-
Phase field model for phase transformations of multi-phase and multi-component alloysSakai, K. et al. | 2002
- 149
-
History effects during the selection of primary dendrite spacing. Comparison of phase-field simulations with experimental observationsDiepers, H. J. / Ma, D. / Steinbach, I. et al. | 2002
- 154
-
2D and 3D phase-field simulations of lamella and fibrous eutectic growthApel, M. / Boettger, B. / Diepers, H. J. / Steinbach, I. et al. | 2002
- 159
-
A coupled map lattice model for dendrite in diffusion fieldOhtaki, M. / Honjo, H. / Sakaguchi, H. et al. | 2002
- 164
-
Curvature evolution of interface in two-dimensional ice crystalsMaruyama, M. / Kawabata, K. et al. | 2002
- 169
-
Tip-sticking probability and the branching distribution of a fractal pattern in a diffusion fieldSakamoto, A. / Ohta, S. et al. | 2002
- 174
-
Simulation on the instability of a solid-liquid interface from a molar flux with a diffuse interface layerKotake, S. et al. | 2002
- 178
-
Feedback control of morphological instabilitySavina, T. V. / Nepomnyashchy, A. A. / Brandon, S. / Golovin, A. A. / Lewin, D. R. et al. | 2002
- 181
-
The stability of triangular `droplet` phases on Si(111)Hannon, J. B. / Tersoff, J. / Tromp, R. M. et al. | 2002
- 188
-
Cross-sectional HRTEM study of Si(5512) reconstructed surfaceLiu, J. / Takeguchi, M. / Yasuda, H. / Furuya, K. et al. | 2002
- 192
-
Surface structure changes associated with Ga diffusion on Si(111)7x7 surfaceOnodera, T. / Ichikawa, T. / Mizoguchi, A. et al. | 2002
- 196
-
Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ sulphur passivationLowe, M. J. / Veal, T. D. / McConville, C. F. / Bell, G. R. / Tsukamoto, S. / Koguchi, N. et al. | 2002
- 201
-
Nanoscale faceting of a NaCl(110) homoepitaxial layerSugawara, A. / Mae, K. et al. | 2002
- 206
-
First principles and macroscopic theories of semiconductor epitaxial growthShiraishi, K. / Oyama, N. / Okajima, K. / Miyagishima, N. / Takeda, K. / Yamaguchi, H. / Ito, T. / Ohno, T. et al. | 2002
- 212
-
Adsorption, diffusion and desorption of Cl atoms on Si(111) surfacesSakurai, S. / Nakayama, T. et al. | 2002
- 217
-
Plasma sputtering of silicon dioxide substrate by low energy Ar ion bombardment: molecular dynamics simulationKim, D. H. / Lee, S. Y. et al. | 2002
- 223
-
Empirical interatomic potential calculations for relative stability of Ga adatom on GaAs(100) and (n11)A surfacesKangawa, Y. / Ito, T. / Taguchi, A. / Shiraishi, K. / Ohachi, T. et al. | 2002
- 227
-
Nanostructures formation and optical properties of II-VI semiconductor compoundsMariette, H. / Marsal, L. / Besombes, L. / Tinjod, F. / Gilles, B. / Kheng, K. / Rouviere, J. L. et al. | 2002
- 234
-
Phase diagrams in nanometer-sized alloy systemsYasuda, H. / Mori, H. et al. | 2002
- 239
-
Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxyOga, R. / Yamamoto, S. / Ohzawa, I. / Fujiwara, Y. / Takeda, Y. et al. | 2002
- 244
-
Heteroepitaxial growth of alkali halide solid solution on GaAs(100)Kiguchi, M. / Saiki, K. / Koma, A. et al. | 2002
- 249
-
TEM observation of b-FeSi2(110),(101)/Si(111) layers grown by reactive deposition epitaxy in the presence of an Sb fluxArakawa, T. / Shao, G. / Makiuchi, S. / Ono, T. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
- 254
-
In-situ observation of Pd2Si islands on Si by UHV-TEM/STMTanaka, M. / Takeguchi, M. / Furuya, K. et al. | 2002
- 259
-
Defect density in non-selective and selective Si/SiGe structuresMenon, C. / Bentzen, A. / Landgren, G. / Radamson, H. H. et al. | 2002
- 264
-
Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVDMarmalyuk, A. A. / Govorkov, O. I. / Petrovsky, A. V. / Nikitin, D. B. / Padalitsa, A. A. / Bulaev, P. V. / Budkin, I. V. / Zalevsky, I. D. et al. | 2002
- 269
-
Atomic and electronic structure of the LiF/LiBr(001) interfaceKatayama, M. / Kiguchi, M. / Saiki, K. / Koma, A. et al. | 2002
- 274
-
Characterization of MBE grown GaAs/AlGaAs heterointerfaces with photoluminescence from quantum wellsHarima, N. / Nelson, J. T. / Ohachi, T. et al. | 2002
- 278
-
The surface and domain structure of NbTe2Cukjati, D. / Prodan, A. / Jug, N. / van Midden, H. J. / Starowicz, P. / Karic, E. / Hla, S. W. / Bohm, H. / Boswell, F. W. / Bennett, J. C. et al. | 2002
- 283
-
Polyhedral (in-)stability of protein crystalsNanev, C. N. / Penkova, A. N. et al. | 2002
- 289
-
pH-dependent oligomerization of BPTI in undersaturated and supersaturated solutions studied by dynamic light scatteringTanaka, S. / Ataka, M. / Onuma, K. / Astier, J. P. / Veesler, S. et al. | 2002
- 295
-
Systematic analysis of the effect of supersaturation on protein crystal qualityYoshizaki, I. / Nakamura, H. / Sato, T. / Igarashi, N. / Komatsu, H. / Yoda, S. et al. | 2002
- 300
-
Morphological evaluation of the g-polymorph of indomethacinSlavin, P. A. / Sheen, D. B. / Shepherd, E. E. / Sherwood, J. N. / Feeder, N. / Docherty, R. / Milojevic, S. et al. | 2002
- 306
-
Crystal growth of macromolecular crystals: correlation between crystal symmetry and growth mechanismsPlomp, M. / McPherson, A. / Malkin, A. J. et al. | 2002
- 312
-
Damping of natural convection in the aqueous protein solutions by the application of high magnetic fieldsWang, L. / Zhong, C. / Wakayama, N. I. et al. | 2002
- 317
-
Microscopic strain analysis of semiconductor crystals using a synchrotron X-ray microbeamMatsui, J. / Tsusaka, Y. / Yokoyama, K. / Takeda, S. / Urakawa, M. / Kagoshima, Y. / Kimura, S. et al. | 2002
- 324
-
Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitationTajima, M. et al. | 2002
- 330
-
X-ray CTR scattering and interference for atomic-scale characterization of semiconductor heterostructuresTakeda, Y. / Tabuchi, M. et al. | 2002
- 338
-
The morphology of grown-in defects in nitrogen-doped silicon crystalsFujimori, H. / Fujisawa, H. / Hirano, Y. / Okabe, T. et al. | 2002
- 345
-
Analysis of silicon incorporation into VGF-grown GaAsBirkmann, B. / Weingartner, R. / Wellmann, P. / Wiedemann, B. / Muller, G. et al. | 2002
- 350
-
Synchrotron X-ray topography of undoped VCz GaAs crystalsTuomi, T. / Knuuttila, L. / Riikonen, J. / McNally, P. J. / Chen, W. M. / Kanatharana, J. / Neubert, M. / Rudolph, P. et al. | 2002
- 356
-
Lateral photovoltage scanning (LPS) method for the visualization of the solid-liquid interface of Si1-xGex single crystalsAbrosimov, N. V. / Ludge, A. / Riemann, H. / Schroder, W. et al. | 2002
- 361
-
Characterization of trap levels in long-duration phosphor crystalsKatsumata, T. / Toyomane, S. / Tonegawa, A. / Kanai, Y. / Kaneyama, U. / Shakuno, K. / Sakai, R. / Komuro, S. / Morikawa, T. et al. | 2002
- 367
-
Ultrahigh-purity aluminum single crystals with a low dislocation density grown by strain-annealing methodMizuno, K. / Yamamoto, S. / Okamoto, H. / Kuga, M. / Hashimoto, E. et al. | 2002
- 373
-
Polytypic transformation during crystal growth monitored by newly developed micro-FTIR system for three-dimensional structural studiesKubota, H. / Kaneko, F. / Kawaguchi, T. / Kawasaki, M. et al. | 2002
- 379
-
Self-preservation effect and dissociation rates of CH4 hydrateTakeya, S. / Ebinuma, T. / Uchida, T. / Nagao, J. / Narita, H. et al. | 2002
- 383
-
CO2 hydrate film formation at the boundary between CO2 and water: effects of temperature, pressure and additives on the formation rateUchida, T. / Ikeda, I. Y. / Takeya, S. / Ebinuma, T. / Nagao, J. / Narita, H. et al. | 2002
- 388
-
In situ transmission and reflection electron microscopy studies of palladium silicide islands grown on silicon (111) surfaceTakeguchi, M. / Liu, J. / Zhang, Q. / Tanaka, M. / Yasuda, H. / Furuya, K. et al. | 2002
- 393
-
Spectro-ellipsometric monitoring and characterization of the growth of Si/Si1-xGex multiple quantum wellsAkazawa, H. et al. | 2002
- 398
-
Real-time observation of surface morphology of indium phosphide MOVPE growth with using X-ray reflectivity techniqueKawamura, T. / Watanabe, Y. / Fujikawa, S. / Bhunia, S. / Uchida, K. / Matsui, J. / Kagoshima, Y. / Tsusaka, Y. et al. | 2002
- 403
-
Study of voltage changes at interface during growth of b-BaB2O4 crystals and possibilities for improving their quality by an external potentialTyurikov, V. I. / Tsvetkov, E. G. et al. | 2002
- 408
-
Crystal growth of sodium oxalate from aqueous solutionLowe, J. / Ogden, M. / McKinnon, A. / Parkinson, G. et al. | 2002
- 414
-
Induction time and three-electrode current vs. voltage characteristics for electrical nucleation of concentrated solutions of sodium acetate trihydrateYoshii, Y. / Kuraoka, M. / Sengoku, K. / Ohachi, T. et al. | 2002
- 419
-
Formation process of calcium carbonate from highly supersaturated solutionKawano, J. / Shimobayashi, N. / Kitamura, M. / Shinoda, K. / Aikawa, N. et al. | 2002
- 424
-
Investigation into the effect of phosphonate inhibitors on barium sulfate precipitationJones, F. / Oliveira, A. / Rohl, A. L. / Parkinson, G. M. / Ogden, M. I. / Reyhani, M. M. et al. | 2002
- 430
-
Defects in epitaxially grown perovskite thin filmsFujimoto, M. et al. | 2002
- 438
-
Characterization of Ba(Zr0.2Ti0.8)O3 thin films deposited by RF-magnetron sputteringChoi, W. S. / Jang, B. S. / Lim, D. G. / Yi, J. / Hong, B. et al. | 2002
- 443
-
Preparation of BaxSr1-xTiO3 thin films with seeding layer by a sol-gel methodWei, Z. / Xu, H. / Noda, M. / Okuyama, M. et al. | 2002
- 448
-
Growth of ferroelectric PbZrxTi1-xO3 thin films by metalorganic chemical vapor deposition (MOCVD)Shimizu, M. / Fujisawa, H. / Niu, H. / Honda, K. et al. | 2002
- 455
-
Composition dependence of ferroelectric properties of epitaxial Pb(ZrxTi1-x)O3 thin films grown by metalorganic chemical vapor depositionOikawa, T. / Aratani, M. / Saito, K. / Funakubo, H. et al. | 2002
- 459
-
Observations of initial growth stage of epitaxial Pb(Zr,Ti)O3 thin films on SrTiO3(100) substrate by MOCVDFujisawa, H. / Nonomura, H. / Shimizu, M. / Niu, H. et al. | 2002
- 464
-
Domain structures in epitaxial Pb(Zr0.68,Ti0.32)O3 thin filmsSaito, K. / Oikawa, T. / Yamaji, I. / Akai, T. / Funakubo, H. et al. | 2002
- 468
-
Structural, morphology and electrical studies on ferroelectric bismuth titanate thin films prepared by sol-gel techniqueGiridharan, N. V. / Madeswaran, S. / Jayavel, R. et al. | 2002
- 473
-
Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi3TaTiO9 solid solution films by MOCVD and their propertiesMitsuya, M. / Osada, M. / Saito, K. / Funakubo, H. et al. | 2002
- 478
-
Preparation and characterization of Bi4Ti3O12-SrBi4Ti4O15 ferroelectric thin films by pulsed laser depositionNoda, M. / Nakaiso, T. / Takarabe, K. / Kodama, K. / Okuyama, M. et al. | 2002
- 482
-
Preparation and orientation control of RMnO3 (R=Y, Yb) thin film by chemical solution depositionSuzuki, K. / Nishizawa, K. / Miki, T. / Kato, K. et al. | 2002
- 487
-
Growth process and interfacial structure of epitaxial Y2O3/Si thin films deposited by pulsed laser depositionKakuno, K. / Ito, D. / Fujimura, N. / Matsui, T. / Ito, T. et al. | 2002
- 492
-
X-ray study of the surface morphology of crystalline and amorphous tantalum peroxide thin films prepared by RF magnetron sputteringHuang, T. W. / Lee, H. Y. / Hsieh, Y. W. / Lee, C. H. et al. | 2002
- 496
-
Near-UV emitting diodes based on a transparent p-n junction composed of heteroepitaxially grown p-SrCu2O2 and n-ZnoHosono, H. / Ohta, H. / Hayashi, K. / Orita, M. / Hirano, M. et al. | 2002
- 503
-
Growth of N-doped and Ga+N-codoped ZnO films by radical source molecular beam epitaxyNakahara, K. / Takasu, H. / Fons, P. / Yamada, A. / Iwata, K. / Matsubara, K. / Hunger, R. / Niki, S. et al. | 2002
- 509
-
Crystal growth of ZnOOka, K. / Shibata, H. / Kashiwaya, S. et al. | 2002
- 514
-
Spatial composition fluctuations in blue-luminescent ZnCdO semiconductor films grown by molecular beam epitaxySakurai, K. / Takagi, T. / Kubo, T. / Kajita, D. / Tanabe, T. / Takasu, H. / Fujita, S. et al. | 2002
- 518
-
CdO epitaxial layers grown on (001) GaAs surfaces by metalorganic molecular-beam epitaxyAshrafi, A. B. / Kumano, H. / Suemune, I. / Ok, Y. W. / Seong, T. Y. et al. | 2002
- 523
-
Piezoelectric and optical properties of ZnO films deposited by an electron-cyclotron-resonance sputtering systemKadota, M. / Miura, T. / Minakata, M. et al. | 2002
- 528
-
Metalorganic molecular beam epitaxy of ZnO using DEZn and H2O precursorsShirakata, S. / Saeki, K. / Terasako, T. et al. | 2002
- 533
-
Electro-optic property of ZnO:X (X=Li,Mg) thin filmsNagata, T. / Shimura, T. / Ashida, A. / Fujimura, N. / Ito, T. et al. | 2002
- 538
-
Growth and characterization of Ga-doped ZnO layers on a-plane sapphire substrates grown by molecular beam epitaxyKato, H. / Sano, M. / Miyamoto, K. / Yao, T. et al. | 2002
- 544
-
Epitaxial growth and optoelectronic properties of nitrogen-doped ZnO films on (1120) Al2O3 substrateGuo, X. L. / Tabata, H. / Kawai, T. et al. | 2002
- 548
-
Optical and electrical properties of Co-doped epitaxial ZnO filmsJin, Z. W. / Fukumura, T. / Hasegawa, K. / Yoo, Y. Z. / Ando, K. / Sekiguchi, T. / Ahmet, P. / Chikyow, T. / Hasegawa, T. / Koinuma, H. et al. | 2002
- 553
-
ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxyOgata, K. / Kawanishi, T. / Maejima, K. / Sakurai, K. / Fujita, S. et al. | 2002
- 558
-
Fabrication of epitaxial In2O3(ZnO)5 thin films by RF sputtering and their characterization by X-ray and electron diffraction techniquesOhashi, N. / Ogino, T. / Sakaguchi, I. / Hishita, S. / Komatsu, M. / Takenaka, T. / Haneda, H. et al. | 2002
- 564
-
Preparation and characterization of nanosized ZnO arrays by electrophoretic depositionWang, Y. C. / Leu, I. C. / Hon, M. H. et al. | 2002
- 569
-
Characterization of epitaxial TiO2 films prepared by pulsed laser depositionYamamoto, S. / Sumita, T. / Yamaki, T. / Miyashita, A. / Naramoto, H. et al. | 2002
- 574
-
Preparation of epitaxial TiO2 films by PLD for photocatalyst applicationsYamaki, T. / Sumita, T. / Yamamoto, S. / Miyashita, A. et al. | 2002
- 580
-
Crystallization of amorphous alumina films induced by high-energy ion irradiationNakao, S. / Jin, P. / Xu, G. / Ikeyama, M. / Miyagawa, Y. / Miyagawa, S. et al. | 2002
- 586
-
MOCVD precursors for Ta- and Hf-compound filmsMachida, H. / Hoshino, A. / Suzuki, T. / Ogura, A. / Ohshita, Y. et al. | 2002
- 591
-
Room-temperature epitaxial growth of NiO(111) thin films by pulsed laser depositionKakehi, Y. / Nakao, S. / Satoh, K. / Kusaka, T. et al. | 2002
- 596
-
Lithium niobate films on periodic poled lithium niobate substrates prepared by liquid phase epitaxyCallejo, D. / Bermudez, V. / Serrano, M. D. / Dieguez, E. et al. | 2002
- 602
-
Liquid phase epitaxy of KTiOPO4 on KTi1-xGexOPO4 substratesSole, R. / Nikolov, V. / Vilalta, A. / Carvajal, J. J. / Massons, J. / Gavalda, J. / Aguilo, M. / Diaz, F. et al. | 2002
- 608
-
Epitaxial growth of oxide films (La-Ca-Mn-O and Y-Ba-Cu-O) by the facing-target sputtering techniqueZhao, K. / Zhou, L. Z. / Leung, C. H. / Yeung, C. F. / Fung, C. K. / Wong, H. K. et al. | 2002
- 612
-
Sol-gel growth of LiCoO2 films on Si substrates by a spin-coating methodKushida, K. / Kuriyama, K. et al. | 2002
- 616
-
Hydrogen treatment for polycrystalline nitrogen-doped Cu2O thin filmIshizuka, S. / Kato, S. / Okamoto, Y. / Akimoto, K. et al. | 2002
- 621
-
Crystal growth and optical properties of rare earth calcium oxoboratesVivien, D. / Aka, G. / Kahn-Harari, A. / Aron, A. / Mougel, F. / Benitez, J. M. / Ferrand, B. / Klein, R. / Kugel, G. / Nain, N. L. et al. | 2002
- 629
-
Effect of crystal growth atmosphere on the crystal birefringence of GdYCOB for third harmonic generation of Nd:YAG laserKawamura, K. / Nakao, H. / Furuya, H. / Yasuda, S. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 632
-
Crystal growth of GdYCOB for non-critical phase-matched second-harmonic generation at 860nmNakao, H. / Makio, S. / Furuya, H. / Kawamura, K. / Yasuda, S. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 637
-
Ce, Er, Yb:YCa4O(BO3)3 crystalsKuzmicheva, G. M. / Ageev, A. Y. / Rybakov, V. B. / Panyutin, V. L. / Yu, Y. M. / Chizhikov, V. I. et al. | 2002
- 641
-
Influence of Ca4GdO(BO3)3 doping on its propertiesukasiewicz, T. / Kityk, I. V. / Makowska-Janusik, M. / Majchrowski, A. / Ga&lz.xl / azka, Z. / Kaddouri, H. / Mierczyk, Z. et al. | 2002
- 645
-
Effect of crystallinity on the bulk laser damage and UV absorption of CLBO crystalsOno, R. / Kamimura, T. / Fukumoto, S. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. / Yoshida, K. et al. | 2002
- 649
-
Growth and optical properties of a new nonlinear optical lanthanum calcium borate crystalXu, X. W. / Chong, T. C. / Zhang, G. Y. / Cheng, S. D. / Li, M. H. / Phua, C. C. et al. | 2002
- 654
-
The crystal growth and nonlinear optical properties of K2Al2B2O7Hu, Z. G. / Ushiyama, N. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 658
-
The major problems of seeding and growth of barium borate crystals in terms of new data on phase relations in BaO-B2O3-Na2O systemTsvetkov, E. G. / Tyurikov, V. I. / Khranenko, G. G. et al. | 2002
- 663
-
Theoretical studies of nonlinear optical crystals in metal cluster compoundsWu, K. / Chen, X. / Snijders, J. G. / Sa, R. / Lin, C. / Zhuang, B. et al. | 2002
- 668
-
Morphologic characterization of DyxY1-xAl3(BO3)4 single crystals grown from the flux and vapour phaseMartazquez, R. / Caballero, M. A. / Gonzalez-Manas, M. / Kokanyan, E. P. / Ruiz, C. M. / Dieguez, E. et al. | 2002
- 672
-
Flux growth of large potassium titanyl phosphate crystals and their electro-optical applicationsWang, X. / Yuan, X. / Li, W. / Qi, J. / Wang, S. / Shen, D. et al. | 2002
- 677
-
Engineering of lithium niobate domain structure through the off-centered Czochralski growth techniqueBermudez, V. / Callejo, D. / Vilaplana, R. / Capmany, J. / Dieguez, E. et al. | 2002
- 682
-
Chemical and thermal conditions for the formation of stoichiometric LiNbO3Polgar, K. / Peter, A. / Poppl, L. / Ferriol, M. / Foldvari, I. et al. | 2002
- 687
-
Modeling of defects and surfaces in perovskite ferroelectricsBorstel, G. / Eglitis, R. I. / Kotomin, E. A. / Heifets, E. et al. | 2002
- 694
-
Growth and characterization of potassium tantalate niobate single crystals by the step-cooling techniqueIlangovan, R. / Ravi, G. / Subramanian, C. / Ramasamy, P. / Sakai, S. et al. | 2002
- 700
-
Growth and ferroelectric properties of Nd-doped strontium-barium niobate crystalsIvleva, L. I. / Volk, T. R. / Isakov, D. V. / Gladkii, V. V. / Polozkov, N. M. / Lykov, P. A. et al. | 2002
- 703
-
Crystal growth and physical properties of Cs2Nb4O11 and Rb2Nb4O11 single crystalsKharitonova, E. P. / Voronkova, V. I. / Yanovskii, V. K. / Stefanovich, S. Y. et al. | 2002
- 707
-
Growth habits of 3 and 4-inch langasite single crystalsUda, S. / Wang, S. Q. / Konishi, N. / Inaba, H. / Harada, J. et al. | 2002
- 714
-
High-quality langasite films grown by liquid phase epitaxyKlemenz, C. et al. | 2002
- 720
-
Growth of epitaxial substrate Gd3Ga5O12 (GGG) single crystal through pure GGG phase polycrystalline materialZhao, G. / Li, T. / Xu, J. et al. | 2002
- 725
-
MoO3-Li2O flux LPE growth of YIG films and its characterizationTakagi, T. / Fujino, M. / Fujii, T. et al. | 2002
- 730
-
The growth of TiO2 (rutile) single crystals using the FZ method under high oxygen pressurePark, J. K. / Shim, K. B. / Auh, K. H. / Tanaka, I. et al. | 2002
- 735
-
In situ measurement of Bi4Ge3O12 interface supercooling during melt crystal growthGolyshev, V. D. / Gonik, M. A. / Tsvetovsky, V. B. et al. | 2002
- 740
-
Bi4B2O9-crystal growth and some new attractive propertiesMuehlberg, M. / Burianek, M. / Edongue, H. / Poetsch, C. et al. | 2002
- 745
-
Optical properties of EFG grown Nd:YVO4 single crystals dependent on Nd concentrationHur, M. G. / Yang, W. S. / Suh, S. J. / Ivanov, M. A. / Kochurikhin, V. V. / Yoon, D. H. et al. | 2002
- 749
-
Growth of large Bi2Sr2CaCu2Oy single crystals by a modified vertical Bridgman methodTanaka, H. / Kishida, S. et al. | 2002
- 753
-
Growth of La-doped Bi2Sr2CaCu2Oz single crystals by a self-flux methodUemoto, H. / Maki, K. / Kishida, S. et al. | 2002
- 756
-
On the growth of underdoped Bi2Sr2CaCu2O8+d single crystals by TSFZ methodLiang, B. / Lin, C. T. et al. | 2002
- 762
-
Crystal growth of BiSrCaCuo thin films on submicron-sized step structuresIshibashi, T. / Yonemitsu, K. / Inagaki, K. / Sato, K. et al. | 2002
- 767
-
Construction of (Nd0.33Eu0.33Gd0.33)Ba2Cu3Ox phase diagram and its crystallizationHayakawa, Y. / Murai, T. / Aswal, D. K. / Kumagawa, M. et al. | 2002
- 772
-
Growth mechanism and additive effect of high-Tc superconducting crystalsChen, C. / Wondre, F. / Ryan, J. F. / Narlikar, A. V. / Samanta, S. B. et al. | 2002
- 778
-
Top-seeded solution growth of Ca-doped YBCO single crystalsLin, C. T. / Liang, B. / Chen, H. C. et al. | 2002
- 783
-
Crystal growth of YCuO2 delafossite containing triangular Cu planesIsawa, K. / Nagano, M. / Yamada, K. et al. | 2002
- 787
-
Bulk single-crystal growth of strontium ruthenates by a floating-zone methodIkeda, S. I. / Azuma, U. / Shirakawa, N. / Nishihara, Y. / Maeno, Y. et al. | 2002
- 792
-
Growth of bulk Pr2-xCexCuO4+d single crystals by B2O3 encapsulated flux techniqueJayavel, R. / Mochiku, T. / Ooi, S. / Hirata, K. et al. | 2002
- 796
-
Crystal growth of SrCu2O3 under high pressureLoffert, A. / Gross, C. / Assmus, W. et al. | 2002
- 801
-
Crystal growth of Ca12Al14O33 by the floating zone methodWatauchi, S. / Tanaka, I. / Hayashi, K. / Hirano, M. / Hosono, H. et al. | 2002
- 806
-
Growth of large La1-xSrxMnO3 single crystals under argon pressure by the floating-zone techniquePrabhakaran, D. / Coldea, A. I. / Boothroyd, A. T. / Blundell, S. J. et al. | 2002
- 810
-
Floating zone growth and properties of La1-xAxMnO3 (A=Ca,Sr) single crystalsShulyatev, D. / Karabashev, S. / Arsenov, A. / Mukovskii, Y. / Zverkov, S. et al. | 2002
- 815
-
Growth of large La2-xSrxNiO4+d single crystals by the floating-zone techniquePrabhakaran, D. / Isla, P. / Boothroyd, A. T. et al. | 2002
- 820
-
Historical review of quartz crystal growthIwasaki, F. / Iwasaki, H. et al. | 2002
- 828
-
Kinetics of dissolution and state of silica in hydrothermal solutions of Na2CO3 and NaOH, and accelerated method for the quartz crystal characterization against growth rateBalitsky, V. S. / Kurashige, M. / Balitskaya, L. V. / Iwasaki, H. et al. | 2002
- 833
-
Experimental study of the simultaneous dissolution and growth of quartz and topazBalitsky, V. S. / Balitskaya, L. V. / Lu, T. / Shigley, J. E. et al. | 2002
- 837
-
OH impurities in GaPO4 crystals: correlation between infrared absorption and mass loss during thermal treatmentJacobs, K. / Hofmann, P. / Klimm, D. et al. | 2002
- 843
-
Growth striations in GaPO4 single crystals obtained under hydrothermal conditionsBarz, R. U. / Grassl, M. / Gille, P. et al. | 2002
- 848
-
Piezoelectric single crystal Pb[(Zn1/3Nb2/3)0.93Ti0.07] O3 (PZNT 93/7) for ultrasonic transducersHarada, K. / Hosono, Y. / Kobayashi, T. / Yamashita, Y. / Wada, S. / Tsurumi, T. et al. | 2002
- 853
-
Growth of 3-in single crystals of piezoelectric Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 by the supported solution Bridgman methodMatsushita, M. / Tachi, Y. / Echizenya, K. et al. | 2002
- 858
-
Growth of Co-doped (Ba,Sr)TiO3 single crystals and their characterizationMadeswaran, S. / Giridharan, N. V. / Jayavel, R. / Subramanian, C. et al. | 2002
- 864
-
One possible mechanism of spiral/footing growth of Cz-grown Li6Gd(BO3)3Chaminade, J. P. / Viraphong, O. / Miyazawa, S. et al. | 2002
- 869
-
Growth of luminescent Zn2SiO4:Mn2+ particles inside oxidized porous silicon: emergence of yellow luminescenceTaghavinia, N. / Lerondel, G. / Makino, H. / Yamamoto, A. / Yao, T. / Kawazoe, Y. / Goto, T. et al. | 2002
- 874
-
X-ray diffraction and FTIR spectroscopy of heat treated R2O3:3Ga2O3:4B2O3 systemsBeregi, E. / Watterich, A. / Madarasz, J. / Toth, M. / Polgar, K. et al. | 2002
- 879
-
Growth of high-melting sesquioxides by the heat exchanger methodPeters, V. / Bolz, A. / Petermann, K. / Huber, G. et al. | 2002
- 884
-
Growth and crystal structure of the BeAl6O10 single crystalsAlimpiev, A. I. / Merkulov, A. A. / Solntsev, V. P. / Tsvetkov, E. G. / Matrosov, V. N. / Pestryakov, E. V. et al. | 2002
- 890
-
Growth and characterization of deuterated analog of l-arginine phosphate single crystalsHaja Hameed, A. S. / Ravi, G. / Ilangovan, R. / Nixon Azariah, A. / Ramasamy, P. et al. | 2002
- 894
-
Influence of neutral environment in the growth of Cr-doped LiCAF/LiSAF crystals: X-ray powder diffraction and EPR analysisVazquez, R. M. / Santos, M. T. / Lopez, F. J. / Bravo, D. / Dieguez, E. et al. | 2002
- 899
-
Peculiarities of the growth of disordered Na, R-fluorite (R=Y, Ce-Lu) single crystalsBlistanov, A. A. / Chernov, S. P. / Karimov, D. N. / Ouvarova, T. V. et al. | 2002
- 905
-
Nitride semiconductors-impact on the future worldAkasaki, I. et al. | 2002
- 912
-
Growth and characterization of freestanding GaN substratesMotoki, K. / Okahisa, T. / Nakahata, S. / Matsumoto, N. / Kimura, H. / Kasai, H. / Takemoto, K. / Uematsu, K. / Ueno, M. / Kumagai, Y. et al. | 2002
- 922
-
Bulk GaN growth by direct synthesis methodNishino, K. / Kikuta, D. / Sakai, S. et al. | 2002
- 926
-
The effect of metallic catalysts on the synthesis of GaN micro-crystalsRoh, C. H. / Park, Y. J. / Kim, E. K. / Shim, K. B. et al. | 2002
- 931
-
GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysisHirako, A. / Yoshitani, M. / Nishibayashi, M. / Nishikawa, Y. / Ohkawa, K. et al. | 2002
- 936
-
Quantum chemical study of gas-phase reactions of trimethylaluminium and triethylaluminium with ammonia in III-V nitride semiconductor crystal growthIkenaga, M. / Nakamura, K. / Tachibana, A. / Matsumoto, K. et al. | 2002
- 942
-
Key issues for obtaining high-quality GaN films by two-flow metalorganic vapor phase epitaxyMorimoto, K. / Inoue, N. et al. | 2002
- 947
-
Relaxation of misfit-induced stress in nitride-based heterostructuresTerao, S. / Iwaya, M. / Sano, T. / Nakamura, T. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 951
-
Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaNIwaya, M. / Terao, S. / Sano, T. / Ukai, T. / Nakamura, R. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 956
-
Metalorganic vapor phase epitaxy growth of AlGaN/GaN heterostructures on sapphire substratesHiroki, M. / Maeda, N. / Kobayashi, N. et al. | 2002
- 961
-
MOCVD growth of high reflective GaN/AlGaN distributed Bragg reflectorsNakada, N. / Ishikawa, H. / Egawa, T. / Jimbo, T. / Umeno, M. et al. | 2002
- 968
-
MOVPE growth and characterization of Al1-xInxN/GaN multiple layersKosaki, M. / Mochizuki, S. / Nakamura, T. / Watanabe, Y. / Yukawa, Y. / Nitta, S. / Yamaguchi, S. / Amano, H. / Akasaki, I. et al. | 2002
- 972
-
Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H-SiC substrate by LP-MOVPE for deep-UV emissionTakano, T. / Kurimoto, M. / Yamamoto, J. / Kawanishi, H. et al. | 2002
- 978
-
Growth of GaN and related materials by gas-source molecular-beam epitaxy using uncracked ammonia gasYoshida, S. et al. | 2002
- 983
-
Effect of hydrogen on morphological changes in columnar structure of GaN grown by ECR-MBEAraki, T. / Onogi, A. / Juni, N. / Nanishi, Y. et al. | 2002
- 988
-
Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxyKusakabe, K. / Kikuchi, A. / Kishino, K. et al. | 2002
- 993
-
Effect of sapphire substrate nitridation on determining rotation domain in GaN growthYamaguchi, T. / Araki, T. / Saito, Y. / Kano, K. / Kanazawa, H. / Nanishi, Y. / Teraguchi, N. / Suzuki, A. et al. | 2002
- 998
-
In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBEXu, K. / Yano, N. / Jia, A. W. / Yoshikawa, A. / Takahashi, K. et al. | 2002
- 1003
-
Polarity control of GaN grown on sapphire substrate by RF-MBEXu, K. / Yano, N. / Jia, A. W. / Yoshikawa, A. / Takahashi, K. et al. | 2002
- 1008
-
GaN growth by compound source molecular beam epitaxyHonda, T. / Sato, K. / Hashimoto, T. / Shinohara, M. / Kawanishi, H. et al. | 2002
- 1012
-
Lattice relaxation process of AlN growth on atomically flat 6H-SiC substrate in molecular beam epitaxyOnojima, N. / Suda, J. / Matsunami, H. et al. | 2002
- 1017
-
Growth of high-quality InN using low-temperature intermediate layers by RF-MBESaito, Y. / Yamaguchi, T. / Kanazawa, H. / Kano, K. / Araki, T. / Nanishi, Y. / Teraguchi, N. / Suzuki, A. et al. | 2002
- 1022
-
Effect of atomic hydrogen irradiation on native oxides of InN surfaceOhashi, T. / Saito, Y. / Maruyama, T. / Nanishi, Y. et al. | 2002
- 1027
-
MBE growth of Eu- or Tb-doped GaN and its optical propertiesBang, H. / Morishima, S. / Li, Z. / Akimoto, K. / Nomura, M. / Yagi, E. et al. | 2002
- 1032
-
Effect of GaN buffer layer on crystallinity of InN grown on (111)GaAsGuo, Q. / Okada, A. / Kidera, H. / Tanaka, T. / Nishio, M. / Ogawa, H. et al. | 2002
- 1037
-
Crystal growth of nitride-rich GaNP by laser-assisted metalorganic chemical-vapor depositionYoshida, S. / Kikawa, J. / Itoh, Y. et al. | 2002
- 1042
-
NH3 flow rates dependence of crystallinity in GaN thin films grown by reactive close-spaced method at low temperatureWatanabe, Y. / Sano, M. et al. | 2002
- 1047
-
Electron microscopy analyses of microstructures in ELO-GaNKuwano, N. / Horibuchi, K. / Kagawa, K. / Nishimoto, S. / Sueyoshi, M. et al. | 2002
- 1055
-
Carrier-gas dependence of ELO GaN grown by hydride VPEMiyake, H. / Bohyama, S. / Fukui, M. / Hiramatsu, K. / Iyechika, Y. / Maeda, T. et al. | 2002
- 1060
-
Reduction of defect density in GaN epilayer having buried Ga metal by MOCVDSumiya, M. / Kurumasa, Y. / Ohtsuka, K. / Kuwahara, K. / Takano, Y. / Fuke, S. et al. | 2002
- 1065
-
Reduction of threading dislocation density in AlXGa1-XN grown on periodically grooved substratesMochizuki, S. / Detchprohm, T. / Sano, S. / Nakamura, T. / Amano, H. / Akasaki, I. et al. | 2002
- 1070
-
Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method-effect of mask geometryHoribuchi, K. / Kuwano, N. / Miyake, H. / Hiramatsu, K. et al. | 2002
- 1075
-
Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolutionYoshimoto, M. / Saraie, J. / Nakamura, S. et al. | 2002
- 1079
-
Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputteringGuo, Q. X. / Okada, A. / Kidera, H. / Tanaka, T. / Nishio, M. / Ogawa, H. et al. | 2002
- 1084
-
Comparison of GaN growth processes on GaAs(111)A and (111)B substrates studied by ab initio calculationMatsuo, Y. / Kumagai, Y. / Irisawa, T. / Koukitu, A. et al. | 2002
- 1089
-
Growth parameter dependence of HVPE GaN and polarity and crystal quality of the grown layersNamerikawa, M. / Sato, T. / Takahashi, O. / Suemasu, T. / Hasegawa, F. et al. | 2002
- 1094
-
Effect of buffer layer on the growth of GaN on Si substrateLee, J. W. / Jung, S. H. / Shin, H. Y. / Lee, I. H. / Yang, C. W. / Lee, S. H. / Yoo, J. B. et al. | 2002
- 1099
-
Fabrication of GaN/AlGaN heterostructures on a (111)Si substrate by selective MOVPEKato, T. / Honda, Y. / Yamaguchi, M. / Sawaki, N. et al. | 2002
- 1104
-
Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBEYodo, T. / Ando, H. / Nosei, D. / Harada, Y. / Tamura, M. et al. | 2002
- 1110
-
Growth of wurtzite-GaN on Si(211) by metalorganic vapor phase epitaxyChen, X. F. / Honda, Y. / Kato, T. / Sawaki, N. et al. | 2002
- 1114
-
Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxySuda, J. / Matsunami, H. et al. | 2002
- 1118
-
New oxide crystal (La,Sr)(Al,Ta)O3 as substrate for GaN epitaxyukasiewicz, T. / Swirkowicz, M. / Sakowska, H. / Turos, A. / Leszczynski, M. / Ratajczak, R. et al. | 2002
- 1124
-
Effects of growth temperature in selective-area growth of cubic GaN on GaAs (100) by MOVPESanorpim, S. / Wu, J. / Onabe, K. / Shiraki, Y. et al. | 2002
- 1129
-
Structural analysis of Si-doped AlGaN/GaN multi-quantum wellsNakamura, T. / Mochizuki, S. / Terao, S. / Sano, T. / Iwaya, M. / Kamiyama, S. / Amano, H. / Akasaki, I. et al. | 2002
- 1133
-
Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layersTabuchi, M. / Kyouzu, H. / Takeda, Y. / Yamaguchi, S. / Amano, H. / Akasaki, I. et al. | 2002
- 1139
-
Characterization of local structures around In atoms in Ga1-xInx layers by fluorescence EXAFS measurementsTabuchi, M. / Katou, D. / Kyouzu, H. / Takeda, Y. / Yamaguchi, S. / Amano, H. / Akasaki, I. et al. | 2002
- 1143
-
Influence of lattice polarity on wurzite GaN{0001} decomposition as studied by in situ gravimetric monitoring methodMayumi, M. / Satoh, F. / Kumagai, Y. / Takemoto, K. / Koukitu, A. et al. | 2002
- 1148
-
Growth and characterizations of InGaN on N- and Ga-polarity GaN grown by plasma-assisted molecular-beam epitaxyShen, X. Q. / Ide, T. / Shimizu, M. / Okumura, H. et al. | 2002
- 1153
-
CAICISS characterization of GaN films grown by pulsed laser depositionOhta, J. / Fujioka, H. / Furusawa, M. / Sasaki, A. / Yoshimoto, M. / Koinuma, H. / Sumiya, M. / Oshima, M. et al. | 2002
- 1158
-
G-GIXD characterization of GaN grown by laser MBETakahashi, H. / Ohta, J. / Fujioka, H. / Oshima, M. / Kimura, M. et al. | 2002
- 1163
-
Low-pressure MOCVD growth of GaN/AlGaN multiple quantum wells for intersubband transitionsHoshino, K. / Someya, T. / Hirakawa, K. / Arakawa, Y. et al. | 2002
- 1167
-
Valence transition of Eu ions in GaN near the surfaceMaruyama, T. / Morishima, S. / Bang, H. / Akimoto, K. / Nanishi, Y. et al. | 2002
- 1172
-
Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaNSaito, T. / Arakawa, Y. et al. | 2002
- 1176
-
On the capacitance-voltage characteristics of Al/BaTiO3/GaN MFS structuresSenthil Kumar, M. / Sumathi, R. R. / Giridharan, N. V. / Jayavel, R. / Kumar, J. et al. | 2002
- 1180
-
Growth of large high-quality SiC single crystalsOhtani, N. / Fujimoto, T. / Katsuno, M. / Aigo, T. / Yashiro, H. et al. | 2002
- 1187
-
Evolution of domain walls in 6H- and 4H-SiC single crystalsSiche, D. / Rost, H. J. / Doerschel, J. / Schulz, D. / Wollweber, J. et al. | 2002
- 1192
-
Mechanism of nitrogen incorporation in sublimation growth of SiCNaitoh, M. / Hara, K. / Hirose, F. / Onda, S. et al. | 2002
- 1196
-
Computational study on the SiC sublimation growthBottcher, K. / Schulz, D. et al. | 2002
- 1202
-
Synthesis and growth of 3C-SiC crystals from solution at 950degreeCTanaka, A. / Shiozaki, N. / Katsuno, H. et al. | 2002
- 1206
-
Epitaxial growth of thick 4H-SiC layers in a vertical radiant-heating reactorTsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1213
-
High-purity 4H-SiC epitaxial growth by hot-wall chemical vapor depositionNakazawa, S. / Kimoto, T. / Hashimoto, K. / Matsunami, H. et al. | 2002
- 1219
-
SiC homoepitaxy on Al-ion-implanted layers for fabricating power device structuresImaizumi, M. / Tanimura, J. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T. et al. | 2002
- 1224
-
Selective homoepitaxy of 4H-SiC on (0001) and (1120) masked substratesChen, Y. / Kimoto, T. / Takeuchi, Y. / Matsunami, H. et al. | 2002
- 1230
-
Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxySyvajarvi, M. / Yakimova, R. / Kakanakova-Georgieva, A. / Sridhara, S. G. / Linnarsson, M. K. / Janzen, E. et al. | 2002
- 1235
-
Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space techniqueFurusho, T. / Lilov, S. K. / Ohshima, S. / Nishino, S. et al. | 2002
- 1239
-
A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0001) C-faceNishiguchi, T. / Masuda, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 1244
-
3C-SiC hetero-epitaxial growth on undulant Si(001) substrateNagasawa, H. / Yagi, K. / Kawahara, T. et al. | 2002
- 1250
-
Lateral over-growth of 3C-SiC on patterned Si(111) substratesNishino, S. / Jacob, C. / Okui, Y. / Ohshima, S. / Masuda, Y. et al. | 2002
- 1254
-
In situ observation of reflection high-energy electron diffraction during the initial growth of SiC on Si using dimethylsilaneYasui, K. / Narita, Y. / Inubushi, T. / Akahane, T. et al. | 2002
- 1260
-
Growth kinetics in plasma CVD of a-SiC films from monomethylsilane revealed by in situ spectroscopyKaneko, T. / Miyakawa, N. / Yamazaki, H. / Iikawa, Y. et al. | 2002
- 1264
-
Orientation dependence of solid phase growth of implantation-induced amorphous layer in 6H-SiCNakamura, T. / Matsumoto, S. / Satoh, M. et al. | 2002
- 1269
-
Device-grade homoepitaxial diamond film growthOkushi, H. / Watanabe, H. / Ri, S. / Yamanaka, S. / Takeuchi, D. et al. | 2002
- 1277
-
Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor depositionTachiki, M. / Fujisaki, T. / Taniyama, N. / Kudo, M. / Kawarada, H. et al. | 2002
- 1281
-
Growth rate of high-quality large diamond crystalsSumiya, H. / Toda, N. / Satoh, S. et al. | 2002
- 1286
-
Growth morphology and change in growth conditions of a spinel-twinned natural diamondAbduriyim, A. / Kitamura, M. et al. | 2002
- 1291
-
Molecular-beam epitaxy of InAs on GaAs substrates with hole arrays patterned by focused ion beamMorishita, Y. / Ishiguro, M. / Miura, S. / Enmei, Y. et al. | 2002
- 1296
-
Luminescence in excess of 1.5mm at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layerTatebayashi, J. / Nishioka, M. / Arakawa, Y. et al. | 2002
- 1301
-
Uniform formation process of self-organized InAs quantum dotsYamaguchi, K. / Kaizu, T. / Yujobo, K. / Saito, Y. et al. | 2002
- 1307
-
Effect of buffer composition on lateral alignment of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B substratesXu, H. Z. / Akahane, K. / Song, H. Z. / Okada, Y. / Kawabe, M. et al. | 2002
- 1312
-
Fabrication of GaN quantum dots by metalorganic chemical vapor selective depositionTachibana, K. / Someya, T. / Ishida, S. / Arakawa, Y. et al. | 2002
- 1316
-
Stranski-Krastanow growth of GaN quantum dots by metalorganic chemical vapor depositionMiyamura, M. / Tachibana, K. / Someya, T. / Arakawa, Y. et al. | 2002
- 1320
-
Alloying of CdSe/ZnSe quantum dot grown by an alternate molecular beam supplyOhishi, M. / Tanaka, K. / Fujimoto, T. / Yoneta, M. / Saito, H. et al. | 2002
- 1326
-
Preparation of ferromagnetic (In,Mn)As with relatively low hole concentration and Curie temperature 50KSlupinski, T. / Oiwa, A. / Yanagi, S. / Munekata, H. et al. | 2002
- 1331
-
Preparation of ferromagnetic quaternary (In,Ga,Mn)AsSlupinski, T. / Munekata, H. / Oiwa, A. et al. | 2002
- 1334
-
Effect of low-temperature annealing on the crystallinity of III-V-based diluted magnetic semiconductorsHashimoto, Y. / Hayashi, T. / Katsumoto, S. / Iye, Y. et al. | 2002
- 1339
-
Growth and properties of new III-V diluted magnetic semiconductor Ga1-xCrxAsZaets, W. / Saito, H. / Ando, K. et al. | 2002
- 1344
-
Preparation of quaternary magnetic alloy semiconductor epilayers (Ga,Mn,Fe)AsMoriya, R. / Munekata, H. / Kondo, T. / Oiwa, A. et al. | 2002
- 1349
-
Growth and properties of (Ga,Mn)As on Si (100) substrateZhao, J. H. / Matsukura, F. / Abe, E. / Chiba, D. / Ohno, Y. / Takamura, K. / Ohno, H. et al. | 2002
- 1353
-
Molecular beam epitaxy of (Ga,Mn)NKondo, T. / Kuwabara, S. / Owa, H. / Munekata, H. et al. | 2002
- 1358
-
Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperatureSonoda, S. / Shimizu, S. / Sasaki, T. / Yamamoto, Y. / Hori, H. et al. | 2002
- 1363
-
Room temperature ferromagnetism in novel magnetic semiconductors based on II-IV-V2 chalcopyrite compoundsSato, K. / Medvedkin, G. A. / Ishibashi, T. et al. | 2002
- 1370
-
Growth of (Cd,Mn)GeP2 ferromagnetic semiconductorHirose, K. / Medvedkin, G. A. / Ishibashi, T. / Nishi, T. / Sato, K. et al. | 2002
- 1374
-
MBE growth of MnTe/ZnTe superlattices on GaAs (100) vicinal substratesSuzuki, T. / Ishibe, I. / Nabetani, Y. / Kato, T. / Matsumoto, T. et al. | 2002
- 1378
-
Growth of Fe(100) on GaAs(100) for tunnel magneto-resistance junctionsManago, T. / Mizuguchi, M. / Akinaga, H. et al. | 2002
- 1383
-
MBE growth of ultrathin Co films on a Si(111) surface with ultrathin buffer layersHyomi, K. / Murayama, A. / Oka, Y. / Kondoh, S. / Falco, C. M. et al. | 2002
- 1388
-
Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxyFeichtinger, P. / Goorsky, M. S. / Muemmler, F. / Rickborn, S. / Tran, Q. / Oster, D. / Moreland, J. et al. | 2002
- 1394
-
Effects of ions and electrons in electron-beam-excited plasma assisted CVD on nanocrystalline silicon film propertiesOhshita, Y. / Yamaguchi, K. / Motegi, H. / Yamaguchi, M. et al. | 2002
- 1399
-
Effect of UV-O2, NF3/H2 surface preparation on the crystalline defects in silicon homoepitaxy (Part I. A study on photochemical surface preparation in series)Sun, M. C. / Kim, D. H. / Kwon, S. K. et al. | 2002
- 1404
-
New Si atomic-layer-controlled growth technique with thermally cracked hydride moleculeSuda, Y. / Hosoya, N. / Shiratori, D. et al. | 2002
- 1410
-
Microchannel epitaxy: an overviewNishinaga, T. et al. | 2002
- 1418
-
Crystallographic orientation dependence of impurity incorporation during epitaxial lateral overgrowth of InPSun, Y. T. / Anand, S. / Lourdudoss, S. et al. | 2002
- 1423
-
Erbium-doped GaP grown by MOMBE and their optical propertiesSuemune, I. / Uesugi, K. / Shimozawa, T. / Kumano, H. / Machida, H. / Shimoyama, N. et al. | 2002
- 1428
-
Growth kinetics of GaP in LPEInatomi, Y. / Horiuchi, K. / Kato, A. / Kuribayashi, K. et al. | 2002
- 1434
-
Silicon doping into MBE-grown GaAs at high arsenic vapor pressuresMiyagawa, A. / Yamamoto, T. / Ohnishi, Y. / Nelson, J. T. / Ohachi, T. et al. | 2002
- 1440
-
Growth and characterization of carbon-doped low-temperature GaAsHerfort, J. / Ulrici, W. / Moreno, M. / Ploog, K. H. et al. | 2002
- 1445
-
X-ray diffraction analysis of LT-GaAs multilayer structuresFukushima, S. / Mukai, K. / Otsuka, N. et al. | 2002
- 1450
-
Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxySaravanan, S. / Hayashi, Y. / Soga, T. / Jimbo, T. / Umeno, M. / Sato, N. / Yonehara, T. et al. | 2002
- 1455
-
Maskless selective direct growth and doping of GaAs using a Ga-Sn low energy focused ion beam for in-situ micro-device structures fabricationCho, D. H. / Suzuki, Y. / Tanaka, M. / Hachiro, M. / Pak, K. et al. | 2002
- 1460
-
A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxyMatsunaga, Y. / Naritsuka, S. / Nishinaga, T. et al. | 2002
- 1466
-
Characterization of GaAs on MnZn ferrite with a MnAs buffer layerIto, S. / Fujioka, H. / Kiwata, H. / Ikeda, T. / Oshima, M. et al. | 2002
- 1471
-
Quantitative imaging of InGaAs/GaAs layers using transmission electron microscopy methods: characterization of stresses and chemical compositionLeifer, K. / Buffat, P. A. / Cagnon, J. / Kapon, E. / Rudra, A. / Stadelmann, P. A. et al. | 2002
- 1476
-
Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPEIshihara, T. / Lee, S. / Akabori, M. / Motohisa, J. / Fukui, T. et al. | 2002
- 1481
-
Metalorganic vapor phase epitaxial growth of metastable GaAs1-xBix alloyOe, K. et al. | 2002
- 1486
-
High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth techniqueTsurumachi, N. / Son, C. S. / Kim, T. G. / Ogura, M. et al. | 2002
- 1491
-
First successful growth of TlInGaAs layers on GaAs substrates by gas source MBELee, H. J. / Mizobata, A. / Konishi, K. / Maeda, O. / Asami, K. / Asahi, H. et al. | 2002
- 1495
-
Growth of TlGaAs by low-temperature molecular-beam epitaxyKajikawa, Y. / Kubota, H. / Asahina, S. / Kanayama, N. et al. | 2002
- 1499
-
In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxyKawamura, Y. / Kondo, A. / Fujimoto, M. / Higashino, T. / Takasaki, H. / Naito, H. / Inoue, N. et al. | 2002
- 1504
-
Uniform growth of high-quality 2-in diameter In0.53Ga0.47As/In0.52Al0.48As/InP and In0.2Ga0.8As/GaAs/AlGaAs multi-quantum well wafers by MBE with GaP and GaAs decomposition sourcesSong, J. D. / Kim, J. M. / Lee, Y. T. et al. | 2002
- 1510
-
Growth, characterization and avalanche photodiode application of strain compensated InGaAsP/InAlAs superlatticeSuzuki, A. / Yokotsuka, T. / Tanaka, H. / Yamada, A. / Ohki, Y. et al. | 2002
- 1515
-
Control of dark currents in multi-quantum well solar cells fabricated by atomic H-assisted molecular beam epitaxyOkada, Y. / Seki, S. / Takeda, T. / Kawabe, M. et al. | 2002
- 1519
-
Sb surface segregation effect on the phase separation of MBE grown InAsSbMiyoshi, H. / Suzuki, R. / Amano, H. / Horikoshi, Y. et al. | 2002
- 1525
-
A novel method to grow high quality In1-xGaxAs ELO and bridge layers with high indium compositionsBalakrishnan, K. / Iida, S. / Kumagawa, M. / Hayakawa, Y. et al. | 2002
- 1531
-
The preparation of B-Sb thin films by molecular flow region PVD processKumashiro, Y. / Nakamura, K. / Doi, Y. / Hirata, K. / Yokoyama, T. / Sato, K. et al. | 2002
- 1536
-
Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxyMatsumura, N. / Yasui, K. / Saraie, J. et al. | 2002
- 1541
-
HRTEM observation of CdSe/ZnSe SQWs grown on vicinal GaAs substrateNabetani, Y. / Kobayashi, Y. / Ito, Y. / Kato, T. / Matsumoto, T. et al. | 2002
- 1545
-
Epitaxial growth and characterization of Cl-doped ZnSe layer by MBEYoneta, M. / Nanami, K. / Uechi, H. / Ohishi, M. / Saito, H. / Yoshino, K. et al. | 2002
- 1550
-
Composition control of CdSeTe layers grown by molecular beam epitaxyMatsumura, N. / Sakamoto, T. / Saraie, J. et al. | 2002
- 1554
-
Amorphous Zn predeposition for growth of low-defect-density CdTe films and low-optical-loss Cd1-xMnxTe magneto-optic waveguide on GaAs substrateZaets, W. / Ando, K. et al. | 2002
- 1559
-
The effect of the electron irradiation on the electrical properties of thin polycrystalline CdSe and CdS layersAntohe, S. / Ruxandra, V. / Alexandru, H. et al. | 2002
- 1566
-
Defects-induced volume deviations in ZnSeEbe, H. / Sakurai, F. / Chen, Z. Q. / Uedono, A. / Zhang, B. P. / Segawa, Y. / Suto, K. / Nishizawa, J. i. et al. | 2002
- 1570
-
Luminescence properties of lithium-doped ZnS epitaxial layers grown by MOCVDNakamura, S. / Yamaguchi, J. / Takagimoto, S. / Yamada, Y. / Taguchi, T. et al. | 2002
- 1575
-
Preparation and Raman spectra of ZnSe/GaAs heteroepitaxial layersMitsumoto, T. / Kado, N. / Kitagawa, H. / Kitahara, K. / Mizuno, K. / Noda, Y. et al. | 2002
- 1580
-
Photoluminescence spectra of arsenic-doped ZnTe films grown by metalorganic vapor phase epitaxy (MOVPE) using triethylarsineHayashida, K. / Tanaka, T. / Nishio, M. / Chang, Y. / Wang, J. / Wang, S. / Guo, Q. / Ogawa, H. et al. | 2002
- 1585
-
Crystalline structure of CdTe directly grown on hydrogen-terminated Si(111) without pre-heat treatmentSeto, S. / Yamada, S. / Miyakawa, T. / Suzuki, K. et al. | 2002
- 1589
-
Structural and optical properties of Zn1-xMnxTe epilayers as diluted magnetic II-VI semiconductorsYu, Y. M. / Park, J. G. / Hyun, M. H. / Nam, S. / Byungsung, O. / Lee, K. S. / An, K. S. / Choi, Y. D. / Yoon, M. Y. / Yu, P. Y. et al. | 2002
- 1594
-
Comparison of hexagonal ZnS film properties on c- and a-sapphiresYoo, Y. Z. / Chikyow, T. / Ahmet, P. / Jin, Z. W. / Kawasaki, M. / Koinuma, H. et al. | 2002
- 1599
-
Energetics in the growth mechanism of semiconductor heteroepitaxyMiyagishima, N. / Okajima, K. / Oyama, N. / Shiraishi, K. / Takeda, K. / Ohno, T. / Ito, T. et al. | 2002
- 1603
-
A quadratic convergence method for MOVPE thermodynamic analysisHasegawa, T. / Koukitu, A. / Kumagai, Y. et al. | 2002
- 1610
-
Epitaxial growth of a vacancy-ordered Ga2Se3 thin film on a vicinal Si(001) substrateUeno, K. / Tokuchi, S. / Saiki, K. / Koma, A. et al. | 2002
- 1615
-
Growth of CuCl nanostructures on CaF2(111) substrates by MBE-their morphology and optical spectraKawamori, A. / Edamatsu, K. / Itoh, T. et al. | 2002
- 1621
-
Charged native point defects in GaAs and other III-V compoundsHurle, D. T. et al. | 2002
- 1628
-
Experimental analysis and modeling of melt growth processesMuller, G. et al. | 2002
- 1638
-
Crystal growth under microgravity: present results and future prospects towards the International Space StationBenz, K. W. / Dold, P. et al. | 2002
- 1646
-
Protein crystal growth in space, past and futureDeLucas, L. J. / Moore, K. M. / Long, M. M. / Rouleau, R. / Bray, T. / Crysel, W. / Weise, L. et al. | 2002
- 1651
-
Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSFOkui, M. / Nishimoto, M. et al. | 2002
- 1657
-
Controlling oxygen concentration and distribution in 200mm diameter Si crystals using the electromagnetic Czochralski (EMCZ) methodWatanabe, M. / Eguchi, M. / Wang, W. / Hibiya, T. / Kuragaki, S. et al. | 2002
- 1663
-
The effects of boron impurity on the extended defects in CZ silicon crystals grown under interstitial rich conditionsTerashima, K. / Noguchi, H. et al. | 2002
- 1667
-
Variation of silicon melt viscosity with boron additionNishimura, S. / Matsumoto, S. / Terashima, K. et al. | 2002
- 1671
-
Measurement of microscopic growth rates in float zone silicon crystalsDold, P. / Schweizer, M. / Croll, A. / Benz, K. W. et al. | 2002
- 1678
-
Grown-in defects in silicon crystalsNakamura, K. / Saishoji, T. / Tomioka, J. et al. | 2002
- 1685
-
Silicon defect and impurity studies using float-zone crystal growth as a toolCiszek, T. F. / Wang, T. H. et al. | 2002
- 1692
-
Numerical simulation of effect of ampoule rotation for the growth of InGaSb by rotational Bridgman methodOzawa, T. / Hayakawa, Y. / Balakrishnan, K. / Kumagawa, M. et al. | 2002
- 1697
-
InP melts: investigation of wetting between boat materials in Bridgman growthShimizu, A. / Nishizawa, J. i. / Oyama, Y. / Suto, K. et al. | 2002
- 1701
-
Influence of temperature oscillations on the interface velocity during Bridgman crystal growthStelian, C. / Duffar, T. / Santailler, J. L. / Nicoara, I. et al. | 2002
- 1707
-
CVD growth of bulk polycrystalline ZnS and its optical propertiesZhenyi, F. / Yichao, C. / Yongliang, H. / Yaoyuan, Y. / Yanping, D. / Zewu, Y. / Hongchang, T. / Hongtao, X. / Heming, W. et al. | 2002
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-
The growth of CdTe bulk crystals using the multi-tube physical vapour transport systemSanghera, H. K. / Cantwell, B. J. / Aitken, N. M. / Brinkman, A. W. et al. | 2002
- 1716
-
Experimental and numerical study of the VGF growth of CdTe crystalOkano, Y. / Kondo, H. / Kishimoto, W. / Li, L. / Dost, S. et al. | 2002
- 1720
-
Heat treatment in semi-closed ampoule for obtaining stoichiometrically controlled cadmium tellurideZha, M. / Bissoli, F. / Zappettini, A. / Zuccalli, G. / Zanotti, L. / Paorici, C. et al. | 2002
- 1726
-
Photoluminescence study on compensating defects in CdTe:AlSong, S. H. / Wang, J. / Ishikawa, Y. / Seto, S. / Isshiki, M. et al. | 2002
- 1731
-
Growth and characterization of SPR-ZnS bulk crystalYoneta, M. / Ichino, K. / Yoshino, K. / Saito, H. / Ohishi, M. / Kobayashi, H. et al. | 2002
- 1736
-
Numerical methods for industrial vertical Bridgman growth of (Cd,Zn)TeLin, K. / Boschert, S. / Dold, P. / Benz, K. W. / Kriessl, O. / Schmidt, A. / Siebert, K. G. / Dziuk, G. et al. | 2002
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-
Modelling of the growth of ternary compound cadmium zinc telluride (in a semi-open Markov-like system) from the binary sources CdTe and ZnTeSanghera, H. K. / Cantwell, B. J. / Brinkman, A. W. et al. | 2002
- 1745
-
Optimization of VGF-growth of GaAs crystals by the aid of numerical modellingMuller, G. / Birkmann, B. et al. | 2002
- 1752
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The axial and radial segregation due to the thermo-convection, the decrease of the melt in the ampoule and the effect of the precrystallization-zone in the semiconductor crystals grown in a Bridgman-Stockbarger system in a low gravity environmentMihailovici, M. M. / Balint, A. M. / Balint, S. et al. | 2002
- 1757
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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growthEvstratov, I. Y. / Kalaev, V. V. / Zhmakin, A. I. / Makarov, Y. N. / Abramov, A. G. / Ivanov, N. G. / Korsakov, A. B. / Smirnov, E. M. / Dornberger, E. / Virbulis, J. et al. | 2002
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Factors affecting the isotherm shape of semi-transparent BaF2 crystals grown by Bridgman methodBarvinschi, F. / Bunoiu, O. / Nicoara, I. / Nicoara, D. / Santailler, J. L. / Duffar, T. et al. | 2002
- 1769
-
Numerical study of interface shape control in the VGF growth of compound semiconductor crystalOkano, Y. / Kondo, H. / Dost, S. et al. | 2002
- 1773
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Octahedral void defects in Czochralski siliconItsumi, M. et al. | 2002
- 1779
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Numerical study of transport phenomena in the THM growth of compound semiconductor crystalOkano, Y. / Nishino, S. s. / Ohkubo, S. s. / Dost, S. et al. | 2002
- 1785
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Effects of rotating magnetic fields on temperature and oxygen distributions in silicon meltKakimoto, K. et al. | 2002
- 1791
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Electrical measurements on molten TiO2 using a floating zone furnaceKatsumata, T. / Shiina, T. / Shibasaki, M. / Matsuo, T. et al. | 2002
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Density of molten calcium fluorideJingu, S. / Chen, X. / Nishimura, S. / Oyama, Y. / Terashima, K. et al. | 2002
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Magnetic field-induced alignment of steel microstructuresMaruta, K. / Shimotomai, M. et al. | 2002
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Effect of foreign particles: a comprehensive understanding of 3D heterogeneous nucleationLiu, X. Y. et al. | 2002
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Crystal nucleation and growth in binary phase-field theoryGranasy, L. / Borzsonyi, T. / Pusztai, T. et al. | 2002
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Characteristic lengthscales of step bunching in KDP crystal growth: in situ differential phase-shifting interferometry studyBooth, N. A. / Chernov, A. A. / Vekilov, P. G. et al. | 2002
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Particle ordering at the initial stage of colloidal crystallization: implication for non-classical dynamic behaviorIshikawa, M. / Morimoto, H. / Maekawa, T. et al. | 2002
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Drop experiments on crystallization of InGaSb semiconductorHayakawa, Y. / Balakrishnan, K. / Komatsu, H. / Murakami, N. / Nakamura, T. / Koyama, T. / Ozawa, T. / Okano, Y. / Miyazawa, M. / Dost, S. et al. | 2002
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Crystallization from a molten zone and pendant drop under supercooling conditionsKimura, H. / Miyazaki, A. et al. | 2002
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Containerless crystallization of siliconKuribayashi, K. / Aoyama, T. et al. | 2002
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Bridgman growth of detached GeSi crystalsVolz, M. P. / Schweizer, M. / Kaiser, N. / Cobb, S. D. / Vujisic, L. / Motakef, S. / Szofran, F. R. et al. | 2002
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Buoyant-thermocapillary and pure thermocapillary convective instabilities in Czochralski systemsSchwabe, D. et al. | 2002
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Non-invasive techniques for observing the surface behavior of molten siliconHibiya, T. / Nakamura, S. / Sumiji, M. / Azami, T. et al. | 2002
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Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone methodKinoshita, K. / Hanaue, Y. / Nakamura, H. / Yoda, S. / Iwai, M. / Tsuru, T. / Muramatsu, Y. et al. | 2002
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Coarsening dynamics in off-critically quenched binary systems under microgravity conditionsEnomoto, Y. et al. | 2002
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Three-dimensional GSMAC-FEM simulations of the deformation process and the flow structure in the floating zone methodKohno, H. / Tanahashi, T. et al. | 2002
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Mathematical simulation of the traveling heater method growth of ternary semiconductor materials under suppressed gravity conditionsLent, B. / Dost, S. / Redden, R. F. / Liu, Y. et al. | 2002
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Three-dimensional analysis of flow and segregation control by slow rotation for Bridgman crystal growth in microgravityLan, C. W. / Tu, C. Y. et al. | 2002
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Features of mass transfer for the laminar melt flow along the interfaceBykova, S. V. / Golyshev, V. D. / Gonik, M. A. / Tsvetovsky, V. B. / Frjazinov, I. V. / Marchenko, M. P. et al. | 2002
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Self-assembled Ge quantum dots on Si and their applicationsWang, K. L. / Liu, J. L. / Jin, G. et al. | 2002
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Ordering and self-organized growth of Si in the Si/SiO2 superlattice systemLockwood, D. J. / Grom, G. F. / Fauchet, P. M. / Tsybeskov, L. et al. | 2002
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Proof of kinetic influence in Ge nanowire formation on Si(113)Sumitomo, K. / Zhang, Z. / Omi, H. / Bottomley, D. J. / Ogino, T. et al. | 2002
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Crystallization of fine silicon particles from silicon monoxideMamiya, M. / Kikuchi, M. / Takei, H. et al. | 2002
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Development of ballistic electron cold cathode by a low-temperature processing of polycrystalline silicon filmsIchihara, T. / Honda, Y. / Aizawa, K. / Komoda, T. / Koshida, N. et al. | 2002
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Unexpected room temperature growth of silicon dioxide crystallites on passivated porous siliconStolyarova, S. / El-Bahar, A. / Nemirovsky, Y. et al. | 2002
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Mass production of multiwalled carbon nanotubes by hydrogen arc dischargeAndo, Y. / Zhao, X. / Inoue, S. / Iijima, S. et al. | 2002
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Vapor phase preparation of super-elastic carbon micro-coilsChen, X. / Motojima, S. / Iwanga, H. et al. | 2002
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Magnetoresistance in carbon micro-coils annealed at various temperaturesFujii, M. / Matsui, M. / Motojima, S. / Hishikawa, Y. et al. | 2002
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Formation of ultrafine platinum particles in an aqueous solution with a surfactantHahakura, S. / Isoda, S. / Ogawa, T. / Moriguchi, S. / Kobayashi, T. et al. | 2002
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Fabrication and structural control of nano-structured thin films by solid-state reaction of compositionally modulated multilayersMatsui, T. / Tsuda, H. / Mabuchi, H. / Morii, K. et al. | 2002
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Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVDAkiyama, K. / Ohya, S. / Konuma, S. / Numata, K. / Funakubo, H. et al. | 2002
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Structural observation of Mn silicide islands on Si(111) 7x7 surface with UHV-TEMZhang, Q. / Takeguchi, M. / Tanaka, M. / Furuya, K. et al. | 2002
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Formation of b-FeSi2 thin films using laser ablationKomuro, S. / Katsumata, T. / Morikawa, T. / Kokai, H. / Zhao, X. / Aoyagi, Y. et al. | 2002
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Growth evolution of b-FeSi2 layers grown by Sb mediated reactive deposition epitaxyMakiuchi, S. / Koga, T. / Arakawa, T. / Tomoda, W. / Maeda, Y. / Saito, K. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
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Crystal growth of b-FeSi2 by temperature gradient solution growth method using Zn solventUdono, H. / Takaku, S. / Kikuma, I. et al. | 2002
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Single-crystal growth of binary and ternary rare earth silicidesBehr, G. / Loser, W. / Bitterlich, H. / Graw, G. / Souptel, D. / Sampathkumaran, E. V. et al. | 2002
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Liquid phase growth of bulk b-FeSi2 single crystals using Sb solventKuramoto, M. / Nose, Y. / Momose, Y. / Saito, K. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
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Cu-based multinary compounds and their crystal growth: synthesis processes, phase diagrams and control of vapor pressuresMatsushita, H. / Katsui, A. / Takizawa, T. et al. | 2002
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Molecular beam epitaxial growth and characterization of CuInSe2 and CuGaSe2 for device applicationsNiki, S. / Yamada, A. / Hunger, R. / Fons, P. J. / Iwata, K. / Matsubara, K. / Nishio, A. / Nakanishi, H. et al. | 2002
- 2000
-
ZnGeP2 growth: melt non-stoichiometry and defect substructureVerozubova, G. A. / Gribenyukov, A. I. / Korotkova, V. V. / Vere, A. W. / Flynn, C. J. et al. | 2002
- 2005
-
Structural properties of Cu(Ga1-xInx)ySz bulk alloysKato, T. / Hayashi, S. / Kiuchi, T. / Ishihara, Y. / Nabetani, Y. / Matsumoto, T. et al. | 2002
- 2009
-
Single-crystal growth and optical properties of undoped and Ce3+ doped CaGa2S4Hidaka, C. / Takizawa, T. et al. | 2002
- 2014
-
Lattice dynamics of the chalcopyrite and defect stannite phases in the Cu-(In,Ga)-Se systemNomura, S. / Endo, S. et al. | 2002
- 2019
-
Growth and band gap of the filled tetrahedral semiconductor LiMgNKuriyama, K. / Nagasawa, K. / Kushida, K. et al. | 2002
- 2023
-
Visualization of light dispersion and structural phase transitions with light figuresYamamoto, N. / Mamedov, N. / Shinohara, T. / Kunie, A. et al. | 2002
- 2028
-
Heteroepitaxy-new challenges and opportunities for materials engineering through molecular beam epitaxyPloog, K. H. et al. | 2002
- 2035
-
Self-organized growth of nanosized flat dots and vertical magnetic Co pillars on Au(111)Fruchart, O. / Renaud, G. / Deville, J. P. / Barbier, A. / Scheurer, F. / Klaua, M. / Barthel, J. / Noblet, M. / Ulrich, O. / Mane-Mane, J. et al. | 2002
- 2041
-
Collision processes between sputtered particles on high speed rotating substrate and atomic mass dependence of sticking coefficientObara, K. / Fu, Z. / Arima, M. / Yamada, T. / Fujikawa, T. / Imamura, N. / Terada, N. et al. | 2002
- 2046
-
Thin-film epitaxial growth of the Heusler alloy Cu2AlMnBach, H. / Westerholt, K. / Geiersbach, U. et al. | 2002
- 2050
-
Preparation of superconducting epitaxial thin films of transition metal nitrides on silicon wafers by molecular beam epitaxyInumaru, K. / Okamoto, H. / Yamanaka, S. et al. | 2002
- 2055
-
Epitaxial growth of Se100-xTex alloy films deposited on (100) surfaces of KI and KBrNagashima, S. et al. | 2002
- 2061
-
Growth characteristics of CaxCd1-xF2 films on Si substrates using CaF2 buffer layerKambayashi, H. / Gotoh, T. / Maeda, H. / Tsutsui, K. et al. | 2002
- 2065
-
Crystal growth and evaporation of a triphenylboroxine thin filmIrie, S. / Sakamoto, A. / Ukeda, S. / Tokunaga, Y. / Isa, K. / Sasaki, T. / Sakurai, K. et al. | 2002
- 2071
-
Monolayer and bilayer formation of 17,19-dotetracontadiyne at a liquid/solid interfaceTakajo, D. / Fujiwara, E. / Irie, S. / Nemoto, T. / Isoda, S. / Ozaki, H. / Toda, N. / Tomii, S. / Magara, T. / Mazaki, Y. et al. | 2002
- 2076
-
Structural relationship between epitaxially grown para-sexiphenyl and mica (001) substratesPlank, H. / Resel, R. / Andreev, A. / Sariciftci, N. S. / Sitter, H. et al. | 2002
- 2082
-
Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystalsSchieber, M. / Schlesinger, T. E. / James, R. B. / Hermon, H. / Yoon, H. / Goorsky, M. et al. | 2002
- 2091
-
Growth of highly oriented LiNbO3 thin films through structure controlled metal alkoxide precursor solutionHirano, S. i. / Takeichi, Y. / Sakamoto, W. / Yogo, T. et al. | 2002
- 2098
-
Facet formation during fiber pulling from the meltEpelbaum, B. M. / Hofmann, D. et al. | 2002
- 2104
-
High-quality crystal growth of organic nonlinear optical crystal DASTTsunesada, F. / Iwai, T. / Watanabe, T. / Adachi, H. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 2107
-
Stability of detached-grown germanium single crystalsSchweizer, M. / Volz, M. P. / Cobb, S. D. / Vujisic, L. / Motakef, S. / Szoke, J. / Szofran, F. R. et al. | 2002
- 2112
-
Influence of pressure control on the growth of bulk GaN single crystal using a Na fluxOnda, M. / Iwahashi, T. / Okamoto, M. / Yap, Y. K. / Yoshimura, M. / Mori, Y. / Sasaki, T. et al. | 2002
- 2116
-
Plasma characteristics of a multi-cusp plasma-sputter-type ion source for thin film formation of gallium nitrideFlauta, R. / Kasuya, T. / Ohachi, T. / Wada, M. et al. | 2002
- 2121
-
Growth of Ca2Si layers on Mg2Si/Si(111) substratesMatsui, H. / Kuramoto, M. / Ono, T. / Nose, Y. / Tatsuoka, H. / Kuwabara, H. et al. | 2002
- 2125
-
Preparation of (Bi,Sb)2S3 semiconductor films by photochemical deposition methodSasaki, H. / Shibayama, K. / Ichimura, M. / Masui, K. et al. | 2002
- 2130
-
Some aspects of the importance of metastable zone width and nucleation in industrial crystallizersUlrich, J. / Strege, C. et al. | 2002
- 2136
-
Growth behaviour of crystals formed by primary nucleation on different crystalliser scalesWesthoff, G. M. / Butler, B. K. / Kramer, H. J. / Jansens, P. J. et al. | 2002
- 2142
-
Effects of operating variables on the induction period of CaCl2-Na2CO3 systemTai, C. Y. / Chien, W. C. et al. | 2002
- 2148
-
Analysis of nucleation of zeolite A from clear solutionsMarui, Y. / Irie, R. / Takiyama, H. / Uchida, H. / Matsuoka, M. et al. | 2002
- 2153
-
The effect of additives on the co-crystallisation of calcium with barium sulphateHennessy, A. J. / Graham, G. M. et al. | 2002
- 2160
-
An assessment of the formation of electrodeposited scales using scanning electron and atomic force microscopyMorizot, A. P. / Neville, A. / Taylor, J. D. et al. | 2002
- 2166
-
Removal of carbon dioxide by reactive crystallization in a scrubber-kinetics of barium carbonate crystalsChen, P. C. / Kou, K. L. / Tai, H. K. / Jin, S. L. / Lye, C. L. / Lin, C. Y. et al. | 2002
- 2172
-
Scale formation of ice from electrolyte solutions on a scraped surface heat exchanger plateVaessen, R. J. / Himawan, C. / Witkamp, G. J. et al. | 2002
- 2178
-
The effect of isotopic substitution of deuterium for hydrogen on the morphology of products precipitated from synthetic Bayer solutionsLoh, J. S. / Watling, H. R. / Parkinson, G. M. et al. | 2002
- 2183
-
Crystallization phenomena of magnesium ammonium phosphate (MAP) in a fluidized-bed-type crystallizerHirasawa, I. / Kaneko, S. / Kanai, Y. / Hosoya, S. / Okuyama, K. / Kamahara, T. et al. | 2002
- 2188
-
Secondary nucleation due to crystal-impeller and crystal-vessel collisions by population balances in CFD-modellingLiiri, M. / Koiranen, T. / Aittamaa, J. et al. | 2002
- 2194
-
Relationship between growth rate and supercooling in the formation of ice lenses in a glass powderWatanabe, K. et al. | 2002
- 2199
-
Wet calcining of trona (sodium sesquicarbonate) and bicarbonate in a mixed solventGartner, R. S. / Witkamp, G. J. et al. | 2002
- 2205
-
Controlling factor of polymorphism in crystallization processKitamura, M. et al. | 2002
- 2215
-
Molecular modelling of the crystallization of polymorphs. Part I: The morphology of HMX polymorphster Horst, J. H. / Kramer, H. J. / van Rosmalen, G. M. / Jansens, P. J. et al. | 2002
- 2221
-
Polymorphic transformation of dl-methionine crystals in aqueous solutionsYamanobe, M. / Takiyama, H. / Matsuoka, M. et al. | 2002
- 2227
-
X-ray and vibrational spectroscopic study on polymorphism of trielaidinDohi, K. / Kaneko, F. / Kawaguchi, T. et al. | 2002
- 2233
-
Dissolution and phase transition of pharmaceutical compoundsGarcia, E. / Hoff, C. / Veesler, S. et al. | 2002
- 2240
-
Crystal growth of drug materials by spherical crystallizationSzabo-Revesz, P. / Hasznos-Nezdei, M. / Farkas, B. / Gocz, H. / Pintye-Hodi, K. / Ers, I. et al. | 2002
- 2246
-
Axial dispersion in a Kureha Crystal Purifier (KCP)Otawara, K. / Matsuoka, T. et al. | 2002
- 2251
-
Influences of reflux ratio on separation and purification of acrylic acid by inclined column crystallizerFunakoshi, K. / Uchida, H. / Takiyama, H. / Matsuoka, M. et al. | 2002
- 2257
-
Dynamic modeling and simulation of eutectic freeze crystallizationHimawan, C. / Vaessen, R. J. / Kramer, H. J. / Seckler, M. M. / Witkamp, G. J. et al. | 2002
- 2264
-
Report on the Meetings of the IOCG Executive Committee, Council and General Assembly held during ICCG-13/ICVGE-11 in Kyoto, Japan, 30 July-4 August 2001Nishinaga, T. et al. | 2002
- 2267
-
Author Index| 2002
- 2298
-
Subject Index| 2002
- vi
-
ICCG-13/ICVGE-11| 2002
- vi
-
Contents ICCG-13/ICVGE-11 Part 2| 2002
- vi
-
Contents ICCG-13/ICVGE-11 Part 3| 2002
- xiv
-
Chairpersons` prefaceNishinaga, T. / Takahashi, K. et al. | 2002
- xviii
-
Editors` preface| 2002
- xx
-
Contents ICCG-13/ICVGE-11 Part 1| 2002