Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex (English)
- New search for: Ulyashin, A. G.
- New search for: Abrosimov, N. V.
- New search for: Bentzen, A.
- New search for: Suphellen, A.
- New search for: Sauar, E.
- New search for: Svensson, B. G.
- New search for: Ulyashin, A. G.
- New search for: Abrosimov, N. V.
- New search for: Bentzen, A.
- New search for: Suphellen, A.
- New search for: Sauar, E.
- New search for: Svensson, B. G.
In:
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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9
, 4-5
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772-776
;
2006
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ISSN:
- Article (Journal) / Print
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Title:Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1-xGex
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Contributors:Ulyashin, A. G. ( author ) / Abrosimov, N. V. ( author ) / Bentzen, A. ( author ) / Suphellen, A. ( author ) / Sauar, E. ( author ) / Svensson, B. G. ( author )
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Published in:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9, 4-5 ; 772-776
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Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
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Publication date:2006-01-01
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Size:5 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.38152
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.38152 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 9, Issue 4-5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 407
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PrefaceClaeys, Cor / Peaker, Tony / Svensson, Bengt / Vanhellemont, Jan et al. | 2006
- 408
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Germanium: From its discovery to SiGe devicesHaller, E.E. et al. | 2006
- 423
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Strain and lattice engineering for Ge FET devicesBedell, S.W. / Reznicek, A. / Fogel, K. / Ott, J. / Sadana, D.K. et al. | 2006
- 437
-
Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafersDepuydt, Ben / Theuwis, Antoon / Romandic, Igor et al. | 2006
- 444
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Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devicesAkatsu, Takeshi / Deguet, Chrystel / Sanchez, Loic / Allibert, Frédéric / Rouchon, Denis / Signamarcheix, Thomas / Richtarch, Claire / Boussagol, Alice / Loup, Virginie / Mazen, Frédéric et al. | 2006
- 449
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Ge substrates made by Ge-condensation technique: Challenges and current understandingTerzieva, Valentina / Souriau, Laurent / Clemente, Francesca / Benedetti, Alessandro / Caymax, Matty / Meuris, Marc et al. | 2006
- 454
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Epitaxial growth of Ge and SiGe on Si substratesNylandsted Larsen, Arne et al. | 2006
- 460
-
Kinetics of selective epitaxial growth of Si and relaxed Ge by ultrahigh vacuum chemical vapor deposition in Si(001) windowsHalbwax, M. / Nguyen, Lam H. / Fossard, Frédéric / Le Roux, X. / Mathet, V. / Yam, V. / Cao, Dao Tran / Bouchier, D. et al. | 2006
- 465
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Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growthŚpiewak, P. / Kurzydłowski, K.J. / Vanhellemont, J. / Clauws, P. / Wabiński, P. / Młynarczyk, K. / Romandic, I. / Theuwis, A. et al. | 2006
- 471
-
Atomic transport in germanium and the mechanism of arsenic diffusionBracht, Hartmut / Brotzmann, Sergej et al. | 2006
- 477
-
Ab initio modeling of defect levels in Ge clusters and supercellsCoutinho, J. / Torres, V.J.B. / Carvalho, A. / Jones, R. / Öberg, S. / Briddon, P.R. et al. | 2006
- 484
-
Supercell and cluster density functional calculations of the thermal stability of the divacancy in germaniumJanke, C. / Jones, R. / Coutinho, J. / Öberg, S. / Briddon, P.R. et al. | 2006
- 489
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Studies of the VO centre in Ge using first principles cluster calculationsCarvalho, A. / Jones, R. / Coutinho, J. / Shaw, M. / Torres, V.J.B. / Öberg, S. / Briddon, P.R. et al. | 2006
- 494
-
Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystalsSueoka, K. / Vanhellemont, J. et al. | 2006
- 498
-
Formation energy and migration barrier of a Ge vacancy from ab initio studiesPinto, H.M. / Coutinho, J. / Torres, V.J.B. / Öberg, S. / Briddon, P.R. et al. | 2006
- 503
-
Energy levels of atomic hydrogen in germanium from ab-initio calculationsAlmeida, L.M. / Coutinho, J. / Torres, V.J.B. / Jones, R. / Briddon, P.R. et al. | 2006
- 507
-
The effect of compressive biaxial stress on vacancy clustering in thin Si–Ge layersGanchenkova, M.G. / Borodin, V.A. et al. | 2006
- 514
-
Local vibrations of interstitial carbon in SiGe alloysKhirunenko, L.I. / Pomozov, Yu.V. / Sosnin, M.G. / Trypachko, M.O. / Duvanskii, A. / Torres, V.J.B. / Coutinho, J. / Jones, R. / Briddon, P.R. / Abrosimov, N.V. et al. | 2006
- 520
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Vacancy-dioxygen centers in Si-rich SiGe alloysKhirunenko, L.I. / Pomozov, Yu.V. / Sosnin, M.G. / Trypachko, M.O. / Torres, V.J.B. / Coutinho, J. / Jones, R. / Briddon, P.R. / Abrosimov, N.V. / Riemann, H. et al. | 2006
- 525
-
Divacancy-related complexes in Si(1−x)Ge(x)Khirunenko, L.I. / Pomozov, Yu.V. / Sosnin, M.G. / Trypachko, M.O. / Duvanskii, A.V. / Abrosimov, N.V. / Riemann, H. / Lastovskii, S.B. / Murin, L.I. / Markevich, V.P. et al. | 2006
- 531
-
Diffusion of interstitial Hydrogen molecules in Crystalline Germanium and Silicon: Quantumchemical simulationGusakov, Vasilii et al. | 2006
- 536
-
Atomic scale simulations of arsenic–vacancy complexes in germanium and siliconChroneos, A. / Grimes, R.W. / Tsamis, C. et al. | 2006
- 541
-
Strain-induced shift of phonon modes in Formula Not Shown alloysPezzoli, F. / Grilli, E. / Guzzi, M. / Sanguinetti, S. / Chrastina, D. / Isella, G. / von Kanel, H. / Wintersberger, E. / Stangl, J. / Bauer, G. et al. | 2006
- 541
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Strain-induced shift of phonon modes in alloysPezzoli, F. / Grilli, E. / Guzzi, M. / Sanguinetti, S. / Chrastina, D. / Isella, G. / von Känel, H. / Wintersberger, E. / Stangl, J. / Bauer, G. et al. | 2006
- 546
-
Metals in germaniumClauws, P. / Simoen, E. et al. | 2006
- 554
-
A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germaniumOpsomer, K. / Simoen, E. / Claeys, C. / Maex, K. / Detavernier, C. / Van Meirhaeghe, R.L. / Forment, S. / Clauws, P. et al. | 2006
- 559
-
A deep-level transient spectroscopy study of transition metals in n-type germaniumForment, S. / Vanhellemont, J. / Clauws, P. / Van Steenbergen, J. / Sioncke, S. / Meuris, M. / Simoen, E. / Theuwis, A. et al. | 2006
- 564
-
Hydrogen in germaniumWeber, J. / Hiller, M. / Lavrov, E.V. et al. | 2006
- 571
-
Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germaniumLauwaert, J. / David, M.L. / Beaufort, M.F. / Simoen, E. / Depla, D. / Clauws, P. et al. | 2006
- 576
-
Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type GeAuret, F.D. / Meyer, W.E. / Coelho, S. / Hayes, M. / Nel, J.M. et al. | 2006
- 580
-
Point defects in germanium: Reliable and questionable data in radiation experimentsEmtsev, Vadim et al. | 2006
- 589
-
A comparative study of ion implantation and irradiation-induced defects in Ge crystalsMarkevich, V.P. et al. | 2006
- 597
-
DLTS studies of irradiation-induced defects in p-type germaniumChristian Petersen, M. / Lindberg, C.E. / Nielsen, K. Bonde / Mesli, A. / Nylandsted Larsen, A. et al. | 2006
- 600
-
Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behaviorChen, Jiahe / Yang, Deren / Li, Hong / Ma, Xiangyang / Que, Duanlin et al. | 2006
- 606
-
Defects induced by irradiation with fast neutrons in n-type germaniumKovačević, I. / Pivac, B. / Jac˘imović, R. / Khan, M.K. / Markevich, V.P. / Peaker, A.R. et al. | 2006
- 613
-
Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystalsMarkevich, V.P. / Peaker, A.R. / Markevich, A.V. / Litvinov, V.V. / Murin, L.I. / Emtsev, V.V. et al. | 2006
- 619
-
Oxygen loss and thermal double donor formation in germaniumLitvinov, V.V. / Murin, L.I. / Markevich, V.P. / Peaker, A.R. / Lindström, J.L. et al. | 2006
- 625
-
Enhanced formation of oxygen-related thermal donors in Ge crystals exposed to hydrogen plasmaKazuchits, N.M. / Litvinov, V.V. / Murin, L.I. / Martinovich, V.A. et al. | 2006
- 629
-
Hydrogen-related shallow donors in Ge crystals implanted with protonsPokotilo, Ju.M. / Petukh, A.N. / Litvinov, V.V. / Markevich, V.P. / Kazuchits, N.M. et al. | 2006
- 634
-
Ion-implantation issues in the formation of shallow junctions in germaniumSimoen, E. / Satta, A. / D’Amore, A. / Janssens, T. / Clarysse, T. / Martens, K. / De Jaeger, B. / Benedetti, A. / Hoflijk, I. / Brijs, B. et al. | 2006
- 640
-
Implantation and diffusion of phosphorous in germaniumChroneos, A. / Skarlatos, D. / Tsamis, C. / Christofi, A. / McPhail, D.S. / Hung, R. et al. | 2006
- 644
-
Laser annealing for n+/p junction formation in germaniumTsouroutas, P. / Tsoukalas, D. / Florakis, A. / Zergioti, I. / Serafetinides, A.A. / Cherkashin, N. / Marty, B. / Claverie, A. et al. | 2006
- 650
-
Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe filmsChristensen, J.S. / Kuznetsov, A.Yu. / Gunnaes, A.E. / Svensson, B.G. / Radamson, H.H. et al. | 2006
- 655
-
Implantation and sputtering of Ge ions into SiO2 substrates with the use of Ge ions produced by repetitive laser pulsesRosiński, M. / Badziak, J. / Czarnecka, A. / Gasior, P. / Parys, P. / Pisarek, M. / Turan, R. / Wołowski, J. / Yerci, S. et al. | 2006
- 659
-
Residual strain in Ge films grown by surfactant-mediated epitaxy on Si(111) and Si(001) substratesWietler, Tobias F. / Bugiel, Eberhard / Hofmann, Karl R. et al. | 2006
- 664
-
Amorphization kinetics of germanium under ion implantationKoffel, S. / Claverie, A. / BenAssayag, G. / Scheiblin, P. et al. | 2006
- 668
-
Modeling of low temperature SiGe oxidationMane, S.S. / Hameed, S. / Saha, A.R. / Maiti, C.K. et al. | 2006
- 673
-
Formation and stability of germanium oxide induced by atomic oxygen exposureMolle, Alessandro / Bhuiyan, Md. Nurul Kabir / Tallarida, Grazia / Fanciulli, Marco et al. | 2006
- 679
-
Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface qualityLeys, F.E. / Bonzom, R. / Kaczer, B. / Janssens, T. / Vandervorst, W. / De Jaeger, B. / Van Steenbergen, J. / Martens, K. / Hellin, D. / Rip, J. et al. | 2006
- 685
-
Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectricsWadsworth, H.J. / Bhattacharya, S. / McNeill, D.W. / Ruddell, F.H. / Armstrong, B.M. / Gamble, H.S. / Denvir, D. et al. | 2006
- 690
-
Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rateFedala, A. / Cherfi, R. / Aoucher, M. / Mohammed-Brahim, T. et al. | 2006
- 694
-
Electrochemical pore etching in GeCheng, F. / Carstensen, J. / Föll, H. et al. | 2006
- 701
-
Effect of Ba termination layer on chemical and electrical passivation of Ge (100) surfacesCattoni, A. / Bertacco, R. / Riva, M. / Cantoni, M. / Ciccacci, F. / Von Känel, H. / Norga, G.J. et al. | 2006
- 706
-
Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contactMaeda, Tatsuro / Takagi, Shinichi / Ohnishi, Tsuyoshi / Lippmaa, Mikk et al. | 2006
- 711
-
Comparison of InGaAs MOSFETs with germanium-on-insulator CMOSChin, Albert / Chen, C. / Yu, D.S. / Kao, H.L. / McAlister, S.P. / Chi, C.C. et al. | 2006
- 716
-
Impact of germanium surface passivation on the leakage current of shallow planar p–n junctionsSatta, A. / Nicholas, G. / Simoen, E. / Houssa, M. / Dimoulas, A. / De Jaeger, B. / Van Steenbergen, J. / Meuris, M. et al. | 2006
- 721
-
1/f noise performance of MOSFETs with HfO2 and metal gate on Ge-on-insulator substratesSrinivasan, P. / Simoen, E. / De Jaeger, B. / Claeys, C. / Misra, D. et al. | 2006
- 727
-
The base current and related 1/f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substratesLukyanchikova, N. / Garbar, N. / Smolanka, A. / Lokshin, M. / Hall, S. / Buiu, O. / Mitrovic, I.Z. / El Mubarek, H.A.W. / Ashburn, P. et al. | 2006
- 732
-
Radiation damage in electron-irradiated strained Si n-MOSFETsTakakura, K. / Ohyama, H. / Hayama, K. / Aoki, Y. / Eneman, G. / Verheyen, P. / Simoen, E. / Loo, R. / Claeys, C. et al. | 2006
- 737
-
Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded GexSi1-x (0.3 less-than x less-than 0) spacer emitter and collectorSfina, N. / Nasrallah, S.A.B. / Lazzari, J.L. / Said, M. et al. | 2006
- 737
-
Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded GexSi1−x (0.3<x<0) spacer emitter and collectorSfina, N. / Abdi-Ben Nasrallah, S. / Lazzari, J.-L. / Said, M. et al. | 2006
- 737
-
Modeling of the Stark effect in strained Ge0.6Si0.4/Si/Ge0.6Si0.4 resonant tunneling diodes with graded GexSi1-x (0.3x<0) spacer emitter and collectorSfina, N. / Abdi-Ben Nasrallah, S. / Lazzari, J. L. / Said, M. et al. | 2006
- 741
-
Interface characterization of high-k dielectrics on Ge substratesMisra, D. / Garg, R. / Srinivasan, P. / Rahim, N. / Chowdhury, N.A. et al. | 2006
- 749
-
Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurementsMartens, K. / Simoen, E. / De Jaeger, B. / Meuris, M. / Groeseneken, G. / Maes, H. et al. | 2006
- 753
-
Optical characterization of dislocation free Ge and GeOI wafersKalem, Seref / Romandic, I. / Theuwis, A. et al. | 2006
- 759
-
Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering techniqueHuguenin-Love, J.L. / Soukup, R.J. / Ianno, N.J. / Schrader, J.S. / Thompson, D.W. / Dalal, V.L. et al. | 2006
- 764
-
Spectroscopy of electron states at interfaces of (100)Ge with high-k insulatorsAfanas'ev, V. V. / Stesmans, A. et al. | 2006
- 764
-
Spectroscopy of electron states at interfaces of (100)Ge with high-κ insulatorsAfanas’ev, V.V. / Stesmans, A. et al. | 2006
- 772
-
Ge composition dependence of the minority carrier lifetime in monocrystalline alloys of Si1−xGexUlyashin, A.G. / Abrosimov, N.V. / Bentzen, A. / Suphellen, A. / Sauar, E. / Svensson, B.G. et al. | 2006
- 777
-
Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructuresRössner, Benjamin / Batlogg, Bertram / von Känel, Hans / Chrastina, Daniel / Isella, Giovanni et al. | 2006
- 781
-
Carrier lifetime studies in Ge using microwave and infrared light techniquesGaubas, E. / Bauža, M. / Uleckas, A. / Vanhellemont, J. et al. | 2006
- 788
-
Positron probing of point V-group impurity-vacancy complexes in g-irradiated germaniumArutyunov, N. Y. / Emtsev, V. V. et al. | 2006
- 788
-
Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germaniumArutyunov, N.Yu. / Emtsev, V.V. et al. | 2006
- 794
-
Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodoluminescenceSumitomo, T. / Kita, H. / Matsumoto, S. et al. | 2006
- 794
-
Investigation of dislocations in composition graded and strain relaxed SiGe epitaxial layer by cathodeluminescenceSumitomo, Takamichi / Kita, Haruki / Matsumoto, Satoru et al. | 2006
- 798
-
Electron-beam-induced current imaging for the characterisation of structural defects in Si1−xGex films grown by LE-PECVDVirtuani, A. / Marchionna, S. / Acciarri, M. / Isella, G. / von Kaenel, H. et al. | 2006
- 802
-
Defect imaging of SiGe strain relaxed buffers grown by LEPECVDMarchionna, S. / Virtuani, A. / Acciarri, M. / Isella, G. / von Kaenel, H. et al. | 2006
- 806
-
Nanocalorimetric high-temperature characterization of ultrathin films of a-GeLopeandía, A.F. / Leon-Gutierrez, E. / Garcia, G. / Pi, F. / Bernardi, A. / Goñi, A.R. / Alonso, M.I. / Rodríguez-Viejo, J. et al. | 2006
- 812
-
Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithographyBerbezier, I. / Karmous, A. / Szkutnik, P.D. / Ronda, A. / Sgarlata, A. / Balzarotti, A. / Castrucci, P. / Scarselli, M. / De Crescenzi, M. et al. | 2006
- 817
-
Formation of Ge nanocrystals by utilizing nanocluster sourceLee, P.F. / Dai, J.Y. / Chan, H.L.W. et al. | 2006
- 823
-
Spontaneous Ge island ordering promoted by partial silicon cappingDe Seta, M. / Capellini, G. / Evangelisti, F. / Zinovyev, V.A. / Vastola, G. / Montalenti, F. / Miglio, Leo et al. | 2006
- 828
-
Influence of nucleation parameters in the spatial distribution of the Ge nanocrystals formed by LPCVDMarins, E.S. / Mestanza, S.N.M. / Doi, I. et al. | 2006
- 832
-
Structural and magnetic properties of GeMn diluted magnetic semiconductorAyoub, J.-P. / Favre, L. / Ronda, A. / Berbezier, I. / De Padova, P. / Olivieri, B. et al. | 2006
- 836
-
Formation of Mn5Ge3 nanoclusters in highly diluted MnxGe1−x alloysMorresi, L. / Ayoub, J.P. / Pinto, N. / Ficcadenti, M. / Murri, R. / Ronda, A. / Berbezier, I. et al. | 2006
- 841
-
Non-collinear magnetic states of Mn5Ge3 compoundStroppa, A. / Peressi, M. et al. | 2006
- 848
-
Formation of Ge nanocrystals and SiGe in PECVD grown SiNx:Ge thin filmsDana, Aykutlu / Tokay, Serkan / Aydinli, Atilla et al. | 2006
- 853
-
Thermoelectric properties of Si–Ge whiskersDruzhinin, Anatolij / Ostrovskii, Igor / Kogut, Iurii et al. | 2006