Microstructure of eutectic 80Au/20Sn solder joint in laser diode package (English)
- New search for: Ronnie Teo, J. W.
- New search for: Ng, F. L.
- New search for: Kip Goi, L. S.
- New search for: Sun, Y. F.
- New search for: Wang, Z. F.
- New search for: Shi, X. Q.
- New search for: Wei, J.
- New search for: Li, G. Y.
- New search for: Ronnie Teo, J. W.
- New search for: Ng, F. L.
- New search for: Kip Goi, L. S.
- New search for: Sun, Y. F.
- New search for: Wang, Z. F.
- New search for: Shi, X. Q.
- New search for: Wei, J.
- New search for: Li, G. Y.
In:
MICROELECTRONIC ENGINEERING
;
85
, 3
;
512-517
;
2008
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ISSN:
- Article (Journal) / Print
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Title:Microstructure of eutectic 80Au/20Sn solder joint in laser diode package
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Contributors:Ronnie Teo, J. W. ( author ) / Ng, F. L. ( author ) / Kip Goi, L. S. ( author ) / Sun, Y. F. ( author ) / Wang, Z. F. ( author ) / Shi, X. Q. ( author ) / Wei, J. ( author ) / Li, G. Y. ( author )
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Published in:MICROELECTRONIC ENGINEERING ; 85, 3 ; 512-517
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Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
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Publication date:2008-01-01
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Size:6 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.381
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.381 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 85, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 493
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Behavior of substrate enhanced electron injection in advanced deep sub-micron NMOSFETsWang, Q.X. / Sun, L.X. / Yap, A. / Zhang, Y.J. / Li, H. / Liu, S.H. / Zou, S.C. et al. | 2007
- 500
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Isotropic etch for SiO2 microcantilever release with ICP systemChen, Qi / Fang, Ji / Ji, Hai-Feng / Varahramyan, Kody et al. | 2007
- 508
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Effects of annealing schedule on orientations of Bi3.2Nd0.8Ti3O12 ferroelectric films prepared by metalorganic solution depositionHe, Haiyan / Huang, Jianfeng / Cao, Liyun / Wang, Liesong et al. | 2007
- 512
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Microstructure of eutectic 80Au/20Sn solder joint in laser diode packageRonnie Teo, J.W. / Ng, F.L. / Kip Goi, L.S. / Sun, Y.F. / Wang, Z.F. / Shi, X.Q. / Wei, J. / Li, G.Y. et al. | 2007
- 518
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Controlling warpage of molded package for inkjet manufacturingKaija, Kimmo / Pekkanen, Ville / Mäntysalo, Matti / Mansikkamäki, Pauliina et al. | 2007
- 527
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Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin filmsSchmidt, D. / Strehle, S. / Albert, M. / Hentsch, W. / Bartha, J.W. et al. | 2007
- 534
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Influence of initial microstructure and impurities on Cu room-temperature recrystallization (self-annealing)Stangl, M. / Lipták, M. / Fletcher, A. / Acker, J. / Thomas, J. / Wendrock, H. / Oswald, S. / Wetzig, K. et al. | 2007
- 542
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The interface states analysis of the MIS structure as a function of frequencyTataroğlu, A. / Altındal, Ş. et al. | 2007
- 548
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The effect of Si addition and Ta diffusion barrier on growth and thermal stability of NiSi nanolayerKargarian, M. / Akhavan, O. / Moshfegh, A.Z. et al. | 2007
- 553
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Temperature dependence of the dielectric properties of polymer composite based RF capacitorsHwang, Jin-Hyun / Markondeya Raj, P. / Abothu, Isaac Robin / Yoon, Chong / Iyer, Mahadevan / Jung, Hyung-Mi / Hong, Jong-Kuk / Tummala, Rao et al. | 2007
- 559
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Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devicesPanda, D. / Dhar, A. / Ray, S.K. et al. | 2007
- 566
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Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET for ULSIChaujar, Rishu / Kaur, Ravneet / Saxena, Manoj / Gupta, Mridula / Gupta, R.S. et al. | 2007
- 577
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A method for AlCu interconnect electromigration performance predicting and monitoringZhang, Wenjie / Yi, Leeward / Chang, Pingyi / Wu, Jin et al. | 2007
- 582
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Characteristics of negative electron beam resists, ma-N2410 and ma-N2405Kim, Youngsang / Jeong, Heejun et al. | 2007
- 587
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Design of a bidirectional MEMS actuator with high displacement resolution, large driving force and power-free latchingWang, Weisong / Tatic-Lucic, Svetlana / Brown, Walter L. / Vinci, Richard et al. | 2007
- 599
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Single mask dual damascene processesPerng, Dung-Ching / Fang, Jia-Feng / Chen, Jhin-Wei et al. | 2007
- 603
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Fabrication of microlens arrays using UV micro-stamping with soft roller and gas-pressurized platformYang, Sen-Yeu / Cheng, Fang-Sung / Xu, Shu-Wen / Huang, Po-Hsun / Huang, Tzu-Chien et al. | 2007
- 610
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Modal analysis of board-level electronic packageZhang, Bo / Ding, Han / Sheng, XinJun et al. | 2007
- 621
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Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnectsYi, Seol-Min / Shim, Cheonman / Lee, Han-Choon / Han, Jae-Won / Kim, Kee-Ho / Joo, Young-Chang et al. | 2007
- 625
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A simple method for high yield fabrication of sharp silicon tipsBurt, D.P. / Dobson, P.S. / Donaldson, L. / Weaver, J.M.R. et al. | 2007
- 631
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The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diodeSefaoğlu, A. / Duman, S. / Doğan, S. / Gürbulak, B. / Tüzemen, S. / Türüt, A. et al. | 2007
- 636
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Large area silicon epitaxy using pulsed DC magnetron sputtering depositionPlantin, P. / Challali, F. / Carriot, O. / Lainat, F. / Ancilotti, M. / Gadot, G. / Brault, P. et al. | 2007
- 640
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Study and formation of 2D microstructures of sapphire by focused ion beam millingDai, Tao / Kang, Xiangning / Zhang, Bei / Xu, Jun / Bao, Kui / Xiong, Chang / Gan, Zizhao et al. | 2007
- 646
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Analysis of interface states and series resistance of Ag/SiO2/n-Si MIS Schottky diode using current–voltage and impedance spectroscopy methodsOkutan, Mustafa / Yakuphanoglu, Fahrettin et al. | 2007
- 654
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Contents continued| 2008
- IFC
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Inside Front Cover - Editorial Board| 2008