Mobility Enhancement in Strained Formula Not Shown -FinFETs: Basic Insight and Stress Engineering (English)
- New search for: Serra, N.
- New search for: Esseni, D.
- New search for: Serra, N.
- New search for: Esseni, D.
In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
;
57
, 2
;
482-490
;
2010
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ISSN:
- Article (Journal) / Print
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Title:Mobility Enhancement in Strained Formula Not Shown -FinFETs: Basic Insight and Stress Engineering
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Contributors:Serra, N. ( author ) / Esseni, D. ( author )
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Published in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 57, 2 ; 482-490
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2010-01-01
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Size:9 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3 / 621
- Further information on Dewey Decimal Classification
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Classification:
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Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 57, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 361
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Analysis, Optimization, and Design of 2–2.8 Formula Not Shown Stacked Multiple-Junction PIN GaInAsSb/GaSb Photodetectors for Future O/E InterconnectionsLiang, B. / Chen, D. / Wang, B. / Kwasniewski, T. A. / Wang, Z. et al. | 2010
- 361
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Analysis, Optimization, and Design of 2–2.8 $\mu \hbox{m}$ Stacked Multiple-Junction PIN GaInAsSb/GaSb Photodetectors for Future O/E InterconnectionsBangli Liang, / Dianyong Chen, / Bo Wang, / Kwasniewski, T.A. / Zhigong Wang, et al. | 2010
- 361
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Compound Semiconductor Devices - Analysis, Optimization, and Design of 2-2.8 µm Stacked Multiple-Junction PIN GaInAsSb/GaSb Photodetectors for Future O/E InterconnectionsKashio, A et al. | 2010
- 368
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Nonpolar AlGaN/GaN Metal–Insulator–Semiconductor Heterojunction Field-Effect Transistors With a Normally Off OperationKuroda, M. / Ueda, T. / Tanaka, T. et al. | 2010
- 373
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High-Speed and High-Reliability InP-Based HBTs With a Novel EmitterKashio, N. / Kurishima, K. / Fukai, Y.K. / Ida, M. / Yamahata, S. et al. | 2010
- 380
-
Photocurrent Study of Oxygen-Mediated Doping States in Pentacene Thin-Film TransistorsZhang Jia, / Banu, L. / Kymissis, I. et al. | 2010
- 380
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Molecular and Organic Devices - Photocurrent Study of Oxygen-Mediated Doping States in Pentacene Thin-Film TransistorsJung, S et al. | 2010
- 385
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Investigation of the Device Degradation Mechanism in Pentacene-Based Thin-Film Transistors Using Low-Frequency-Noise SpectroscopyLin Ke, / Bin Dolmanan, S. / Vijila, C. / Soo Jin Chua, / Ye Hua Han, / Ting Mei, et al. | 2010
- 391
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Pentacene-Based Low-Voltage Strain Sensors With PVP/Ta2O5 Hybrid Gate DielectricsTsuchiya, H et al. | 2010
- 391
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Pentacene-Based Low-Voltage Strain Sensors With PVP/$ \hbox{Ta}_{2}\hbox{O}_{5}$ Hybrid Gate DielectricsSoyoun Jung, / Taeksoo Ji, / Varadan, V.K. et al. | 2010
- 391
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Pentacene-Based Low-Voltage Strain Sensors With PVP/ Formula Not Shown Hybrid Gate DielectricsJung, S. / Ji, T. / Varadan, V. K. et al. | 2010
- 397
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Origin of Different Dependences of Open-Circuit Voltage on the Electrodes in Layered and Bulk Heterojunction Organic Photovoltaic CellsChunfu Zhang, / Shi-Wun Tong, / Chang-Yun Jiang, / En-Tang Kang, / Chan, D.S.H. / Chunxiang Zhu, et al. | 2010
- 406
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Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure EffectsTsuchiya, H. / Ando, H. / Sawamoto, S. / Maegawa, T. / Hara, T. / Yao, H. / Ogawa, M. et al. | 2010
- 406
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Nanoelectronics - Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure EffectsLin, D-L et al. | 2010
- 415
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Measurement of High Sensitivity and Low Crosstalk of Zero-Space Microlens for 2.8- Formula Not Shown -Pitch Active Pixel SensorJin, X. / Fan, X. / Liu, Z. / Kuang, Z. / Cheng, J. / Chen, J. / Liu, Y. / Yang, J. et al. | 2010
- 415
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Optoelectronics, Display, and Imaging - Measurement of High Sensitivity and Low Crosstalk of Zero-Space Microlens for 2.8-µm-Pitch Active Pixel SensorToyota, Y et al. | 2010
- 415
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Measurement of high sensitivity and low crosstalk of zero-space microlens for 2.8-micrometer-pitch active pixel sensorJin, Xiangliang / Fan, Xiaoping / Liu, Zhibi / Kuang, Zhangqu / Cheng, Jie / Chen, Jie / Liu, Yu / Yang, Jun et al. | 2010
- 415
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Measurement of High Sensitivity and Low Crosstalk of Zero-Space Microlens for 2.8- $\mu\hbox{m}$-Pitch Active Pixel SensorXiangliang Jin, / Xiaoping Fan, / Zhibi Liu, / Zhangqu Kuang, / Jie Cheng, / Jie Chen, / Yu Liu, / Jun Yang, et al. | 2010
- 422
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Quantified Temperature Effect in a CMOS Image SensorDong-Long Lin, / Ching-Chun Wang, / Chia-Ling Wei, et al. | 2010
- 429
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Degradation Characteristics of n- and p-Channel Polycrystalline-Silicon TFTs Under CMOS Inverter OperationToyota, Y. / Matsumura, M. / Hatano, M. / Shiba, T. / Ohkura, M. et al. | 2010
- 429
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Reliability - Degradation Characteristics of n- and p-Channel Polycrystalline-Silicon TFTs Under CMOS Inverter OperationShrivastava, M et al. | 2010
- 437
-
Silicon Devices - Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS TechnologiesShrivastava, M et al. | 2010
- 437
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Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS TechnologiesYiming Li, / Chih-Hong Hwang, / Tien-Yeh Li, / Ming-Hung Han, et al. | 2010
- 448
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Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS DevicesShrivastava, M. / Baghini, M.S. / Gossner, H. / Rao, V.R. et al. | 2010
- 458
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Part II: A Novel Scheme to Optimize the Mixed-Signal Performance and Hot-carrier Reliability of Drain-Extended MOS DevicesShrivastava, M. / Baghini, M.S. / Gossner, H. / Rao, V.R. et al. | 2010
- 466
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Lateral Profile of Trapped Charges in Split-Gate SONOS MemoryTsuji, Y. / Terai, M. / Fujieda, S. / Syo, T. / Saito, T. / Ando, K. et al. | 2010
- 474
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A 500-MHz DDR High-Performance 72-Mb 3-D SRAM Fabricated With Laser-Induced Epitaxial c-Si Growth Technology for a Stand-Alone and Embedded Memory ApplicationSoon-Moon Jung, / Hoon Lim, / Kwak, K.H. / Kinam Kim, et al. | 2010
- 482
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Mobility Enhancement in Strained $n$ -FinFETs: Basic Insight and Stress EngineeringSerra, N. / Esseni, D. et al. | 2010
- 482
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Mobility Enhancement in Strained Formula Not Shown -FinFETs: Basic Insight and Stress EngineeringSerra, N. / Esseni, D. et al. | 2010
- 491
-
Scaling Properties of Ge-SixGe1-x Core-Shell Nanowire Field-Effect TransistorsFrancis, S A et al. | 2010
- 491
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Scaling Properties of $\hbox{Ge}$ –$\hbox{Si}_{x}\hbox{Ge}_{1 - x}$ Core–Shell Nanowire Field-Effect TransistorsJunghyo Nah, / En-Shao Liu, / Varahramyan, K.M. / Shahrjerdi, D. / Banerjee, S.K. / Tutuc, E. et al. | 2010
- 491
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Scaling Properties of Formula Not Shown – Formula Not Shown Core–Shell Nanowire Field-Effect TransistorsNah, J. / Liu, E. S. / Varahramyan, K. M. / Shahrjerdi, D. / Banerjee, S. K. / Tutuc, E. et al. | 2010
- 496
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A Physically Based Accurate Model for Quantum Mechanical Correction to the Surface Potential of Nanoscale MOSFETsKarim, M.A. / Haque, A. et al. | 2010
- 503
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Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the Formula Not Shown Noise of nMOS and pMOS TransistorsFrancis, S. A. / Dasgupta, A. / Fleetwood, D. M. et al. | 2010
- 503
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Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the $\hbox{1}/f$ Noise of nMOS and pMOS TransistorsFrancis, S.A. / Dasgupta, A. / Fleetwood, D.M. et al. | 2010
- 503
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Solid-State Device Phenomena - Effects of Total Dose Irradiation on the Gate-Voltage Dependence of the 1Marini, S et al. | 2010
- 511
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High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC EpilayersXiaokun Wang, / Cooper, J.A. et al. | 2010
- 511
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Solid-State Power and High Voltage - High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC EpilayersSugianto, A et al. | 2010
- 516
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Vacuum Electron Devices - Full-Wave Modal Analysis of Slow-Wave Periodic Structures Loaded With Elliptical WaveguidesMourey, D A et al. | 2010
- 516
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Full-Wave Modal Analysis of Slow-Wave Periodic Structures Loaded With Elliptical WaveguidesMarini, S. / Coves, A. / Boria, V.E. / Gimeno, B. et al. | 2010
- 525
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BRIEFS - Investigation of Al-Doped Emitter on N-Type Rear Junction Solar CellsLuo, X et al. | 2010
- 525
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Investigation of Al-Doped Emitter on N-Type Rear Junction Solar CellsSugianto, A. / Ly Mai, / Edwards, M.B. / Tjahjono, B.S. / Wenham, S.R. et al. | 2010
- 530
-
Fast PEALD ZnO Thin-Film Transistor CircuitsMourey, D.A. / Zhao, D.A. / Jie Sun, / Jackson, T.N. et al. | 2010
- 535
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Novel Low-$k$ Dielectric Buried-Layer High-Voltage LDMOS on Partial SOIXiaorong Luo, / Yuangang Wang, / Hao Deng, / Jie Fan, / Tianfei Lei, / Yong Liu, et al. | 2010
- 535
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Novel Low- Formula Not Shown Dielectric Buried-Layer High-Voltage LDMOS on Partial SOILuo, X. / Wang, Y. / Deng, H. / Fan, J. / Lei, T. / Liu, Y. et al. | 2010
- 539
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Characterization of SOS-CMOS FETs at Low Temperatures for the Design of Integrated Circuits for Quantum Bit Control and ReadoutEkanayake, S.R. / Lehmann, T. / Dzurak, A.S. / Clark, R.G. / Brawley, A. et al. | 2010
- 548
-
35th IEEE Photovoltaic Specialists Conference (PVSC35)| 2010
- 548
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ANNOUNCEMENTS - Call for Papers — 2010 35th IEEE Photovoltaic Specialists Conference (PVSC)Ghosh, Debashis et al. | 2010
- C1
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Table of contents| 2010
- C2
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IEEE Transactions on Electron Devices publication information| 2010
- C3
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IEEE Transactions on Electron Devices information for authors| 2010