Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth (English)
- New search for: Anderson, T. J.
- New search for: Tadjer, M. J.
- New search for: Mastro, M. A.
- New search for: Hite, J. K.
- New search for: Hobart, K. D.
- New search for: Eddy, C. R.
- New search for: Kub, F. J.
- New search for: Anderson, T. J.
- New search for: Tadjer, M. J.
- New search for: Mastro, M. A.
- New search for: Hite, J. K.
- New search for: Hobart, K. D.
- New search for: Eddy, C. R.
- New search for: Kub, F. J.
In:
JOURNAL OF ELECTRONIC MATERIALS
;
39
, 5
;
478-481
;
2010
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ISSN:
- Article (Journal) / Print
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Title:Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth
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Contributors:Anderson, T. J. ( author ) / Tadjer, M. J. ( author ) / Mastro, M. A. ( author ) / Hite, J. K. ( author ) / Hobart, K. D. ( author ) / Eddy, C. R. ( author ) / Kub, F. J. ( author )
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Published in:JOURNAL OF ELECTRONIC MATERIALS ; 39, 5 ; 478-481
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Publisher:
- New search for: Springer Science + Business Media
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Publication date:2010-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.381
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.381 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 39, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 465
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Foreword| 2010
- 466
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Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional InhomogeneityKim, Hee Jin / Choi, Suk / Yoo, Dongwon / Ryou, Jae-Hyun / Hawkridge, Michael E. / Liliental-Weber, Zuzanna / Dupuis, Russell D. et al. | 2010
- 473
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High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam EpitaxyBillingsley, Daniel / Henderson, Walter / Doolittle, W. Alan et al. | 2010
- 478
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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch DepthAnderson, T.J. / Tadjer, M.J. / Mastro, M.A. / Hite, J.K. / Hobart, K.D. / Eddy, C.R. / Kub, F.J. et al. | 2010
- 482
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Bulk GaN Ion CleavingMoutanabbir, O. / Gösele, U. et al. | 2010
- 489
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Magnetron Sputter Epitaxy and Characterization of Wurtzite AlInN on Si(111) SubstratesHan, Qifeng / Duan, Chenghong / Du, Guoping / Shi, Wangzhou / Ji, Lechun et al. | 2010
- 494
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Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaNGuo, H. / Andagana, H. B. / Cao, X. A. et al. | 2010
- 499
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Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion ImplantationPang, Liang / Seo, Hui-Chan / Chapman, Patrick / Adesida, Ilesanmi / Kim, Kyekyoon (Kevin) et al. | 2010
- 504
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Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal SubstratesGrenko, J. A. / Reynolds, C. L. Jr. / Barlage, D. W. / Johnson, M. A. L. / Lappi, S. E. / Ebert, C. W. / Preble, E. A. / Paskova, T. / Evans, K. R. et al. | 2010
- 517
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Spatial Localization of Carrier Traps in 4H-SiC MOSFET Devices Using Thermally Stimulated CurrentTadjer, Marko J. / Stahlbush, Robert E. / Hobart, Karl D. / McMarr, Patrick J. / Hughes, Hap L. / Imhoff, Eugene A. / Kub, Fritz J. / Haney, Sarah K. / Agarwal, Anant et al. | 2010
- 526
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MOS Characteristics of C-Face 4H-SiCChen, Z. / Ahyi, A.C. / Zhu, X. / Li, M. / Isaacs-Smith, T. / Williams, J.R. / Feldman, L.C. et al. | 2010
- 530
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Growth of 2-Inch V-Doped Bulk 6H-SiC with High Semi-Insulating YieldHao, Jianmin / Wang, Lijie / Feng, Bin / Wang, Xiangquan / Hong, Ying / Wu, Hua / Meng, Dalei / Guo, Junmin / Yan, Ruyue et al. | 2009
- 534
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Generation of Defects in Heavily Al-Doped 4H-SiC Epitaxial Layers Grown by the Low-Temperature Halo-Carbon MethodDas, Hrishikesh / Krishnan, Bharat / Kotamraju, Siva Prasad / Koshka, Yaroslav et al. | 2010
- 540
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Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiCLi, M. / Ahyi, A. C. / Zhu, X. / Chen, Z. / Isaacs-Smith, T. / Williams, J. R. / Crofton, J. et al. | 2010
- 540
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Nickel Ohmic Contacts to N-lmplanted (0001) 4H-SiCLi, M. / Ahyi, A.C. / Zhu, X. / Chen, Z. / Isaacs-Smith, T. / Williams, J.R. / Crofton, J. et al. | 2010
- 545
-
Multiple Magnetic States of Silicon Carbide Diluted Magnetic SemiconductorsLos, Andrei / Los, Victor / Timoshevskii, Andrei et al. | 2009
- 554
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Low-Temperature Pulsed-PECVD ZnO Thin-Film TransistorsZhao, Dalong / Mourey, Devin A. / Jackson, Thomas N. et al. | 2009
- 559
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Dielectric Passivation of ZnO-Based Schottky DiodesWenckstern, H. / Müller, S. / Biehne, G. / Hochmuth, H. / Lorenz, M. / Grundmann, M. et al. | 2009
- 563
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Dual-Gate Multiple-Channel ZnO Nanowire TransistorsKim, Dong-Joo / Hyung, Jung-Hwan / Seo, Deok-Won / Suh, Duk-Il / Lee, Sang-Kwon et al. | 2009
- 568
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Effect of Post-Deposition Processing on ZnO Thin Films and DevicesYen, Tingfang / Haungs, Alan / Kim, Sung Jin / Cartwright, Alexander / Anderson, Wayne A. et al. | 2009
- 573
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Oxygen Deficiency and Hydrogen Turn ZnO RedWeber, M. H. / Parmar, N. S. / Jones, K. A. / Lynn, K. G. et al. | 2010
- 577
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Identification of a Deep Acceptor Level in ZnO Due to Silver DopingChai, J. / Mendelsberg, R. J. / Reeves, R. J. / Kennedy, J. / Wenckstern, H. / Schmidt, M. / Grundmann, M. / Doyle, K. / Myers, T. H. / Durbin, S. M. et al. | 2009
- 584
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The E3 Defect in Mg x Zn1−x OWenckstern, H. / Brachwitz, K. / Schmidt, M. / Dietrich, C. P. / Ellguth, M. / Stölzel, M. / Lorenz, M. / Grundmann, M. et al. | 2009
- 589
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Zinc Oxysulfide Thin Films Grown by Pulsed Laser DepositionDeulkar, Sundeep H. / Huang, Jow-Lay / Neumann-Spallart, Michael et al. | 2010
- 595
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Shallow Donors and Compensation in Homoepitaxial ZnO Thin FilmsLajn, A. / Wenckstern, H. / Benndorf, G. / Dietrich, C.P. / Brandt, M. / Biehne, G. / Hochmuth, H. / Lorenz, M. / Grundmann, M. et al. | 2009
- 601
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Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum WellsPolyakov, A. Y. / Smirnov, N. B. / Govorkov, A. V. / Kozhukhova, E. A. / Belogorokhov, A. I. / Norton, D. P. / Kim, H. S. / Pearton, S. J. et al. | 2009
- 608
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Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) TemplatesBen-Yaacov, Tammy / Ive, Tommy / Walle, Chris G. / Mishra, Umesh K. / Speck, James S. / Denbaars, Steven P. et al. | 2009
- 612
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Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam DepositionShen, Jung-Hsiung / Yeh, Sung-Wei / Huang, Hsing-Lu / Gan, Dershin / Ho, New-Jin et al. | 2010