ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate (English)
- New search for: Hyung, G. W.
- New search for: Park, J.
- New search for: Koo, J. R.
- New search for: Choi, K. M.
- New search for: Kwon, S. J.
- New search for: Cho, E. S.
- New search for: Kim, Y. S.
- New search for: Kim, Y. K.
- New search for: Hyung, G. W.
- New search for: Park, J.
- New search for: Koo, J. R.
- New search for: Choi, K. M.
- New search for: Kwon, S. J.
- New search for: Cho, E. S.
- New search for: Kim, Y. S.
- New search for: Kim, Y. K.
In:
SOLID STATE ELECTRONICS
;
69
;
27-30
;
2012
-
ISSN:
- Article (Journal) / Print
-
Title:ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrate
-
Contributors:Hyung, G. W. ( author ) / Park, J. ( author ) / Koo, J. R. ( author ) / Choi, K. M. ( author ) / Kwon, S. J. ( author ) / Cho, E. S. ( author ) / Kim, Y. S. ( author ) / Kim, Y. K. ( author )
-
Published in:SOLID STATE ELECTRONICS ; 69 ; 27-30
-
Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
-
Publication date:2012-01-01
-
Size:4 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 621.3 / 621.38152
- Further information on Dewey Decimal Classification
-
Classification:
-
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 69
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
UV irradiation effects on hydrogen sensors based on SnO2 thin films fabricated by the photochemical depositionAo, Dengbaoleer / Ichimura, Masaya et al. | 2011
- 4
-
Reproduction of columnar grains after laser crystallization from amorphous-Si to poly-Si using crystallization simulatorMatsuki, Kuniaki / Saito, Ryusuke / Tsukamoto, Shuji / Kimura, Mutsumi et al. | 2011
- 7
-
Self-oscillation in electrochemical transistors: An RLC modeling approachTu, Deyu / Forchheimer, Robert et al. | 2011
- 11
-
Analyzing the current crowding effect induced by oxygen adsorption of amorphous InGaZnO thin film transistor by capacitance–voltage measurementsHuang, Sheng-Yao / Chang, Ting-Chang / Chen, Min-Chen / Jian, Fu-Yen / Chen, Shih-Cheng / Chen, Te-Chih / Jheng, Jing-Ling / Lou, Mei-Jheng / Yeh (Huang), Fon-Shan et al. | 2011
- 14
-
The enhancement of the deflection effect in InGaN/GaN light-emitting diodes with an ellipsoidal air tunnelKim, Hyun Kyu / Ryu, Jae Hyoung / Kim, Hee Yun / Kang, Ji Hye / Han, Nam / Park, Young Jae / Ryu, Beo Deul / Ko, Kang Bok / Baek, Yun Seon / Lysak, Volodymyr-V. et al. | 2011
- 18
-
Carbon nanotubes’ nanocomposite in humidity sensorsShah, Mutabar / Ahmad, Zubair / Sulaiman, K. / Karimov, Kh.S. / Sayyad, M.H. et al. | 2011
- 22
-
Low resistive tungsten dual poly-metal gates with multi-diffusion barrier metals in high performance memory devicesSung, Min-Gyu / Kim, Yong Soo / Kim, Sook Joo / Jeong, Ii-Kyo / Choi, Hak-Soon / Kim, Moon-Su / Kim, Heonho / Park, Sung-Ki et al. | 2011
- 27
-
ZnO thin-film transistors with a polymeric gate insulator built on a polyethersulfone substrateHyung, Gun Woo / Park, Jaehoon / Koo, Ja Ryong / Choi, Kyung Min / Kwon, Sang Jik / Cho, Eou Sik / Kim, Yong Seog / Kim, Young Kwan et al. | 2011
- 31
-
Modeling the impact of junction angles in tunnel field-effect transistorsKao, Kuo-Hsing / Verhulst, Anne S. / Vandenberghe, William G. / Sorée, Bart / Groeseneken, Guido / Meyer, Kristin De et al. | 2011
- 38
-
Exact extraction method of trap densities at insulator interfaces using quasi-static capacitance–voltage characteristics and numerical solutions of physical equationsKimura, Mutsumi / Kojiri, Takashi / Tanabe, Akihiro / Kato, Takeyoshi et al. | 2011
- 43
-
3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETsSeoane, N. / Aldegunde, M. / Garcı´a-Loureiro, A. / Valin, R. / Kalna, K. et al. | 2011
- 50
-
Hybrid solar cells with an inverted structure: Nanodots incorporated ternary systemFu, Honghong / Choi, Mijung / Luan, Weiling / Kim, Yong-Sang / Tu, Shan-Tung et al. | 2011
- 55
-
Symmetrical unified compact model of short-channel double-gate MOSFETsPapathanasiou, K. / Theodorou, C.G. / Tsormpatzoglou, A. / Tassis, D.H. / Dimitriadis, C.A. / Bucher, M. / Ghibaudo, G. et al. | 2011
- 62
-
Effect of channel dopant uniformity on MOSFET threshold voltage variabilityTerada, Kazuo / Sanai, Kazuhiko / Tsuji, Katsuhiro / Tsunomura, Takaaki / Nishida, Akio / Mogami, Tohru et al. | 2011
- 67
-
Red- and white-emitting organic light-emitting diodes based on trimetallic dendritic europium (III) complex: Eu3(DBM)9(TMMB)Chen, Lili / Wang, Binbin / Zhang, Liming / Zhu, Dongxia / Li, Peng / Su, Zhongmin / Li, Bin et al. | 2011
- 72
-
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETsSchwarz, Mike / Holtij, Thomas / Kloes, Alexander / Iñíguez, Benjamín et al. | 2011
- 85
-
Formulas of 1/f noise in Schottky barrier diodes under reverse biasPark, Chan Hyeong / Lee, Jong-Ho et al. | 2011
- 89
-
Analytical models for the electric field distributions and breakdown voltage of Triple RESURF SOI LDMOSHu, Xiarong / Zhang, Bo / Luo, Xiaorong / Li, Zhaoji et al. | 2011
- 94
-
Location controlled high performance single-grain Ge TFTs on glass substrateChen, Tao / Ishihara, Ryoichi / Beenakker, Kees et al. | 2011
- 99
-
Charge transport properties in pentacene films: Evaluation of carrier mobility by different techniquesLucas, B. / El Amrani, A. / Moliton, A. / Skaiky, A. / El Hajj, A. / Aldissi, M. et al. | 2011
- 104
-
Effect of silicon channel orientation on analog performance of (110) surface pMOSFETsKang, Ting-Kuo et al. | 2011
- IFC
-
Editorial Board| 2012