Characterization of a-FeSi2/c-Si heterojunctions for photovoltaic applications (English)
- New search for: Antwis, L.
- New search for: Gwilliam, R.
- New search for: Smith, A.
- New search for: Homewood, K.
- New search for: Jeynes, C.
- New search for: Antwis, L.
- New search for: Gwilliam, R.
- New search for: Smith, A.
- New search for: Homewood, K.
- New search for: Jeynes, C.
In:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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27
, 3
;
035016
;
2012
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ISSN:
- Article (Journal) / Print
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Title:Characterization of a-FeSi2/c-Si heterojunctions for photovoltaic applications
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Contributors:Antwis, L. ( author ) / Gwilliam, R. ( author ) / Smith, A. ( author ) / Homewood, K. ( author ) / Jeynes, C. ( author )
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Published in:SEMICONDUCTOR SCIENCE AND TECHNOLOGY ; 27, 3 ; 035016
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Publisher:
- New search for: IOP PUBLISHING LTD
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Publication date:2012-01-01
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Size:35016 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.38152
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.38152 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 27, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriersVizbaras, Kristijonas / Amann, Markus-Christian et al. | 2012
- 32001
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Fast Track Communication: Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriersVizbaras, Kristijonas et al. | 2012
- 32002
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Fast Track Communication: AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formationSchneider, C et al. | 2012
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AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formationSchneider, C / Kremling, S / Tarakina, N V / Braun, T / Adams, M / Lermer, M / Reitzenstein, S / Worschech, L / Kamp, M / Höfling, S et al. | 2012
- 35001
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Paper: Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substratesIzhnin, I I et al. | 2012
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Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substratesIzhnin, I I / Izhnin, A I / Savytskyy, H V / Vakiv, M M / Stakhira, Y M / Fitsych, O E / Yakushev, M V / Sorochkin, A V / Sabinina, I V / Dvoretsky, S A et al. | 2012
- 35002
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Paper: Patterned gold-assisted growth of GaP nanowires on SiBoulanger, J P et al. | 2012
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Patterned gold-assisted growth of GaP nanowires on SiBoulanger, J P / LaPierre, R R et al. | 2012
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The diffusivity of the Cd interstitial in CdTeShaw, D et al. | 2012
- 35003
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Paper: The diffusivity of the Cd interstitial in CdTeShaw, D et al. | 2012
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A model of the turn-on spread in an optically triggered SiC thyristorsYuferev, V S / Levinshtein, M E / Palmour, J W et al. | 2012
- 35004
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Paper: A model of the turn-on spread in an optically triggered SiC thyristorsYuferev, V S et al. | 2012
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Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistorFan, Ching-Lin / Lin, Yi-Yan / Yang, Chun-Chieh et al. | 2012
- 35005
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Paper: Improvement in performance and reliability with CF4 plasma pretreatment on the buffer oxide layer for low-temperature polysilicon thin-film transistorFan, Ching-Lin et al. | 2012
- 35006
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Paper: LDMOS–SCR: a replacement for LDMOS with high ESD self-protection ability for HV applicationZhang, Peng et al. | 2012
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LDMOS–SCR: a replacement for LDMOS with high ESD self-protection ability for HV applicationZhang, Peng / Wang, Yuan / Jia, Song / Zhang, Xing et al. | 2012
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Fabrication of SnS thin films by a novel multilayer-based solid-state reaction methodXu, Zhan / Chen, Yigang et al. | 2012
- 35007
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Paper: Fabrication of SnS thin films by a novel multilayer-based solid-state reaction methodXu, Zhan et al. | 2012
- 35008
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Paper: Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planesZheng, C C et al. | 2012
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Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planesZheng, C C / Xu, S J / Ning, J Q / Bao, W / Wang, J F / Gao, J / Liu, J M / Zhu, J H / Liu, X L et al. | 2012
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The effect of gate length variation on InAlGaN/GaN HFET device characteristicsKetteniss, N / Behmenburg, H / Lecourt, F / Defrance, N / Hoel, V / De Jaeger, J C / Heuken, M / Kalisch, H / Vescan, A et al. | 2012
- 35009
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Paper: The effect of gate length variation on InAlGaN/GaN HFET device characteristicsKetteniss, N et al. | 2012
- 35010
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Paper: Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth methodKim, Hogyoung et al. | 2012
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Silver Schottky contacts to Zn-polar and O-polar bulk ZnO grown by pressurized melt-growth methodKim, Hogyoung / Sohn, Ahrum / Kim, Dong-Wook et al. | 2012
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Monopolar photoelectromagnetic effect in Pb1−xSnxTe(In) under terahertz laser radiationChernichkin, V I / Ryabova, L I / Nicorici, A V / Khokhlov, D R et al. | 2012
- 35011
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Paper: Monopolar photoelectromagnetic effect in Pb1−xSnxTe(In) under terahertz laser radiationChernichkin, V I et al. | 2012
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Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO filmsJin, J / Zhang, X Y / Zhou, Y X / Chang, G S et al. | 2012
- 35012
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Paper: Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO filmsJin, J et al. | 2012
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Calculation of the internal electric field within doped semiconductorsPhelps, G J et al. | 2012
- 35013
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Paper: Calculation of the internal electric field within doped semiconductorsPhelps, G J et al. | 2012
- 35014
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Paper: Barrier height and interface characteristics of Au/Mn5Ge3/Ge (1 1 1) Schottky contacts for spin injectionSellai, A et al. | 2012
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Barrier height and interface characteristics of Au/Mn5Ge3/Ge (1 1 1) Schottky contacts for spin injectionSellai, A / Mesli, A / Petit, M / Le Thanh, V / Taylor, D / Henini, M et al. | 2012
- 35015
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Paper: Epitaxial growth of Bi2Se3 layers on InP substrates by hot wall epitaxyTakagaki, Y et al. | 2012
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Epitaxial growth of Bi2Se3 layers on InP substrates by hot wall epitaxyTakagaki, Y / Jenichen, B et al. | 2012
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Characterization of a-FeSi2/c-Si heterojunctions for photovoltaic applicationsAntwis, L / Gwilliam, R / Smith, A / Homewood, K / Jeynes, C et al. | 2012
- 35016
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Paper: Characterization of a-FeSi2/c-Si heterojunctions for photovoltaic applicationsAntwis, L et al. | 2012
- 35017
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Paper: Synthesis and characterization of Cd1−xCoxS thin films prepared using the spray pyrolysis techniqueKamruzzaman, M et al. | 2012
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Synthesis and characterization of Cd1−xCoxS thin films prepared using the spray pyrolysis techniqueKamruzzaman, M / Luna, T R / Podder, Jiban / Anowar, M G M et al. | 2012
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Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesisLim, Taekyung / Lee, Sumi / Meyyappan, M / Ju, Sanghyun et al. | 2012
- 35018
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Paper: Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesisLim, Taekyung et al. | 2012
- 35019
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Paper: A TCAD-based modeling of GaN/InGaN/Si solar cellsNawaz, Muhammad et al. | 2012
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A TCAD-based modeling of GaN/InGaN/Si solar cellsNawaz, Muhammad / Ahmad, Ashfaq et al. | 2012
- 35020
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Paper: Low interface trapped charge density in MBE in situ grown Si3N4 cubic GaN MIS structuresZado, A et al. | 2012
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Low interface trapped charge density in MBE in situ grown Si3N4 cubic GaN MIS structuresZado, A / Gerlach, J / As, D J et al. | 2012
- 35021
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Paper: Electron effective masses in an InGaAs quantum well with InAs and GaAs insertsKulbachinskii, V A et al. | 2012
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Electron effective masses in an InGaAs quantum well with InAs and GaAs insertsKulbachinskii, V A / Yuzeeva, N A / Galiev, G B / Klimov, E A / Vasil’evskii, I S / Khabibullin, R A / Ponomarev, D S et al. | 2012
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Structure, morphology and properties of thinned Cu(In, Ga)Se2 films and solar cellsHan, Anjun / Zhang, Yi / Song, Wei / Li, Boyan / Liu, Wei / Sun, Yun et al. | 2012
- 35022
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Paper: Structure, morphology and properties of thinned Cu(In, Ga)Se2 films and solar cellsHan, Anjun et al. | 2012
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Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopyPang, Jin-Biao / Leipner, Hartmut S / Krause-Rehberg, Reinhard / Wang, Zhu / Zhou, Kai / Li, Hui et al. | 2012
- 35023
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Paper: Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopyPang, Jin-Biao et al. | 2012
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On impedance spectroscopy analysis of nonideal heterojunctionsBrus, V V et al. | 2012
- 35024
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Paper: On impedance spectroscopy analysis of nonideal heterojunctionsBrus, V V et al. | 2012
- 039501
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Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statisticsIslam, A / Kalna, K et al. | 2012
- 39501
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CORRIGENDUM: Monte Carlo simulations of mobility in doped GaAs using self-consistent FermiDirac statisticsIslam, A et al. | 2012