Materials Research for Group IV Semiconductors (English)
- New search for: Pizzini, S. a.
- New search for: Kissinger, G.
- New search for: Pizzini, S. a.
- New search for: Kissinger, G.
In:
PHYSICA STATUS SOLIDI C
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11
, 11/12
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1544-1544
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2014
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ISSN:
- Article (Journal) / Print
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Title:Materials Research for Group IV Semiconductors
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Contributors:Pizzini, S. a. ( author ) / Kissinger, G. ( author )
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Published in:PHYSICA STATUS SOLIDI C ; 11, 11/12 ; 1544-1544
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Publisher:
- New search for: John Wiley & Sons, Ltd
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Publication date:2014-01-01
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Size:1 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 530
- Further information on Dewey Decimal Classification
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Classification:
DDC: 530 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 11, Issue 11/12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Contents: Phys. Status Solidi C 1-12/2014| 2014
- 1544
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Materials Research for Group IV SemiconductorsPizzini, S. a. / Kissinger, G. et al. | 2014
- 1545
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High dose proton implantations into silicon: a combined EBIC, SRP and TEM studyKirnstoetter, S. / Faccinelli, M. / Gspan, C. / Grogger, W. / Jelinek, M. / Schustereder, W. / Laven, J. G. / Schulze, H. J. / Hadley, P. et al. | 2014
- 1551
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Nanoscale electrical characterization of graphene contacts to AlGaN/GaN heterostructuresFisichella, G. / Greco, G. / Di Franco, S. / Roccaforte, F. / Ravesi, S. / Giannazzo, F. et al. | 2014
- 1556
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Mediation effect of sub-monolayer carbon on interfacial mixing in Ge growth on Si(100)Itoh, Y. / Hayase, R. / Hatakeyama, S. / Kawashima, T. / Washio, K. et al. | 2014
- 1561
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Band engineering and absorption spectra in compressively strained Ge0.92Sn0.08/Ge (001) double quantum well for infrared photodetectionYahyaoui, N. / Sfina, N. / Lazzari, J. L. / Bournel, A. / Said, M. et al. | 2014
- 1566
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Determination of the single crystal Ge Young-s modulus between room temperature and melting temperature using the impulse excitation techniqueSwarnakar, A. K. / Van der Biest, O. / Van Humbeeck, J. / Vanhellemont, J. et al. | 2014
- 1570
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Ion beam analysis of Heusler alloy Fe3Si epitaxially grown on Si(111)Maeda, Y. / Kawakubo, Y. / Noguchi, Y. / Narumi, K. / Sakai, S. et al. | 2014
- 1574
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Processing-induced near-interfacial thermal donor generation in (100)Si/Si-oxycarbide insulator structures revealed by electron spin resonanceIacovo, S. / Stesmans, A. / Nguyen, S. / Afanas'ev, V. V. et al. | 2014
- 1578
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Comparison between experimental and simulated strain profiles in Ge channels with embedded source/drain stressorsBhler, R. / Eneman, G. / Favia, P. / Bender, H. / Vincent, B. / Hikavyy, A. / Loo, R. / Martino, J. A. / Claeys, C. / Simoen, E. et al. | 2014
- 1583
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An EBIC and SRP study on thermal donors in proton implanted p-type magnetic Czochralski siliconFaccinelli, M. / Kirnstoetter, S. / Schustereder, W. / Laven, J. G. / Hadley, P. et al. | 2014
- 1589
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Multi-frequency electron spin resonance study of inherent Si dangling bond defects at the thermal (211)Si/SiO2 interfaceIacovo, S. / Stesmans, A. et al. | 2014
- 1593
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Electrically detected magnetic resonance study on defects in Si pn-junctions created by proton implantationGruber, G. / Kirnstoetter, S. / Hadley, P. / Koch, M. / Aichinger, T. / Schulze, H. / Schustereder, W. et al. | 2014
- 1597
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Quantitative analysis of carbon impurity concentration in silicon epitaxial layers by luminescence activation using carbon ion implantation and electron irradiationNakagawa, S. / Kashima, K. et al. | 2014
- 1601
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Non-contact high precision alternative to Hg-probe for dopant profiling in SiCCzett, A. / Buday, C. / Savtchouk, S. / Marinskiy, D. et al. | 2014
- 1606
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Monte Carlo study of the early growth stages of 3C-SiC on misoriented <11-20> and <1-100> 6H-SiC substrates: role of step-island interactionCamarda, M. / La Magna, A. / La Via, F. et al. | 2014
- 1611
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Temperature dependent switching behaviour of nickel silicided undoped silicon nanowire devicesBeister, J. / Wachowiak, A. / Heinzig, A. / Trommer, J. / Mikolajick, T. / Weber, W. M. et al. | 2014
- 1618
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Raman analysis of gold catalyst vapor liquid solid germanium nanowiresIsrael, M. / Moreac, A. / Rogel, R. / Landesman, J. P. / Pichon, L. et al. | 2014
- 1622
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Silicon nanowires: synthesis, optical properties and applicationsD'Andrea, C. / Jos Lo Faro, M. / Musumeci, P. / Fazio, B. / Iacona, F. / Franz, G. / Gucciardi, P. / Vasi, C. / Priolo, F. / Irrera, A. et al. | 2014
- 1626
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Enhancement of IR photoluminescence of -FeSi2 nanocrystals by Cu-doping and study of its mechanismMaeda, Y. / Tatsumi, T. / Kawakubo, Y. / Noguchi, Y. / Kobayashi, H. / Narumi, K. / Sakai, S. et al. | 2014
- 1630
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Photoluminescence properties of Ce3+ ions in Ce-doped SiO1.5 thin films containing Si nanocrystalsWeimmerskirch-Aubatin, J. / Stoffel, M. / Devaux, X. / Bouch, A. / Vergnat, M. / Rinnert, H. et al. | 2014
- 1634
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Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-siliconOberemok, O. / Kladko, V. / Litovchenko, V. / Romanyuk, B. / Popov, V. / Melnik, V. / Vanhellemont, J. et al. | 2014
- 1640
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Analysis of the reduction of tensile stress by post-growth annealing methods in multicrystalline silicon wafers produced by the RST processMartnez, O. / Tejero, A. / Tupin, E. / Gonzlez, M. A. / Jimnez, J. / Belouet, C. / Baillis, C. et al. | 2014
- 1644
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Room temperature kerfless silicon thin foils obtained via a stress inducing epoxy layerSerra, J. / Bellanger, P. / Bouchard, P. O. / Bernacki, M. et al. | 2014
- 1648
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Electron beam silicon purificationKravtsov, A. et al. | 2014
- 1654
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Sol-gel deposited phosphorus and boron doped thin silica films for diffused n+p and n+pp+ structuresPene, A. D. / Hartiti, B. / Bitjoka, L. / Thevenin, P. / Kapseu, C. et al. | 2014
- 1657
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Silicon film deposition on crystalline, sintered and powder substrates using an inline optical processing CVD systemAugusto, A. / Serra, F. / Vallra, A. / Serra, J. M. et al. | 2014
- 1661
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Properties of electrodeposited germanium thin filmsUchida, Y. / Funayama, T. / Kogure, Y. / Ueno, K. et al. | 2014
- 1665
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Low temperature hydrogenated microcrystalline silicon-carbon alloys deposited by RF-PECVDGaiaschi, S. / Gueunier-Farret, M. E. / Johnson, E. V. et al. | 2014
- 1669
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Structural and photoconductivity properties of silicon carbon thin filmsCoscia, U. / Ambrosone, G. / Basa, D. K. / Rigato, V. / Binetti, S. et al. | 2014
- 1674
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Tuning optical a-SiC/a-Si active filters by UV bias light in the visible and infrared spectral rangesVieira, M. / Vieira, M. A. / Rodrigues, I. / Silva, V. / Louro, P. et al. | 2014
- 1678
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Properties of a-SiGe:H thin films: correlation between photosensitivity density of statesLaidoudi, L. / Fedala, A. / Rahal, A. et al. | 2014
- 1682
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Effect of total gas pressure in sputtered hydrogenated amorphous siliconFedala, A. / Dad, A. / Khefiani-Guellil, M. / Tata, S. / Simon, C. / Mohammed-Brahim, T. et al. | 2014
- 1686
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Electroluminescence of germanium LEDs on silicon: Influence of antimony dopingSchwartz, B. / Klossek, A. / Kittler, M. / Oehme, M. / Kasper, E. / Schulze, J. et al. | 2014
- 1692
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An amazing semiconductor choice for high-frequency FET: H-terminated polycrystalline diamond film prepared by DC arc jet CVDLi, C. M. / Liu, J. L. / Chen, L. X. / Wei, J. J. / Hei, L. F. / Wang, J. J. / Feng, Z. H. / Guo3, H. et al. | 2014
- 1697
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Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cellsTurmagambetov, T. / Dubois, S. / Garandet, J. P. / Martel, B. / Enjalbert, N. / Veirman, J. / Pihan, E. et al. | 2014
- 1703
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Viability of the use of an a-SiC:H multilayer device in a domestic VLC applicationLouro, P. / Silva, V. / Vieira, M. A. / Vieira, M. et al. | 2014
- 1707
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Depletion of superjunction power MOSFETs visualized by electron beam induced current and voltage contrast measurementsKirnstoetter, S. / Faccinelli, M. / Jelinek, M. / Schustereder, W. / Laven, J. G. / Schulze, H. J. / Hadley, P. et al. | 2014
- 1711
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Outdoor characterization of amorphous silicon based photovoltaic modules with different structuresMambrini, T. / Migan-Dubois, A. / Longeaud, C. / Elyaakoubi, M. et al. | 2014
- 1714
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Effect of nitrogen mole fraction on hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering: transition between metallic and reactive sputteringMokeddem, K. / Kechouane, M. et al. | 2014
- 1718
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First principles analysis of atomic configurations of group IV elements in Ge crystal for solar cellsMatsutani, R. / Sueoka, K. / Kamiyama, E. et al. | 2014
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Issue Information: Phys. Status Solidi C 11-12/2014| 2014
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Cover Picture: Phys. Status Solidi C 11-12/2014| 2014