Terahertz-emission generation caused by new effects in the 6H-SiC natural superlattice (English)
- New search for: Sankin, V. I.
- New search for: Andrianov, A. V.
- New search for: Zakhar’in, A. O.
- New search for: Petrov, A. G.
- New search for: Sankin, V. I.
- New search for: Andrianov, A. V.
- New search for: Zakhar’in, A. O.
- New search for: Petrov, A. G.
In:
SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV
;
49
, 2
;
242-246
;
2015
-
ISSN:
- Article (Journal) / Print
-
Title:Terahertz-emission generation caused by new effects in the 6H-SiC natural superlattice
-
Contributors:Sankin, V. I. ( author ) / Andrianov, A. V. ( author ) / Zakhar’in, A. O. ( author ) / Petrov, A. G. ( author )
-
Published in:SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV ; 49, 2 ; 242-246
-
Publisher:
- New search for: Springer Science + Business Media
-
Publication date:2015-01-01
-
Size:5 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 537.622
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 537.622 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 49, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 139
-
Influence of the spatial arrangement of the Si δ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructuresVolkova, N. S. / Gorshkov, A. P. / Tikhov, S. V. / Baidus, N. V. / Khazanova, S. V. / Degtyarev, V. E. / Filatov, D. O. et al. | 2015
- 143
-
Effect of low-energy electron irradiation on the optical properties of structures containing multiple InGaN/GaN quantum wellVergeles, P. S. / Yakimov, E. B. et al. | 2015
- 149
-
Nucleation and growth of ordered groups of SiGe quantum dotsZinovyev, V. A. / Dvurechenskii, A. V. / Kuchinskaya, P. A. / Armbrister, V. A. / Teys, S. A. / Shklyaev, A. A. / Mudryi, A. V. et al. | 2015
- 154
-
Study of the crystal structure of silicon nanoislands on sapphireKrivulin, N. O. / Pirogov, A. V. / Pavlov, D. A. / Bobrov, A. I. et al. | 2015
- 157
-
Molecular beam epitaxy of III-P x As1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V elementEmelyanov, E. A. / Putyato, M. A. / Semyagin, B. R. / Feklin, D. F. / Preobrazhensky, V. V. et al. | 2015
- 166
-
Transverse plasmon mode in a screened two-dimensional electron systemFateev, D. V. / Melnikova, V. S. / Popov, V. V. et al. | 2015
- 170
-
An observation of direct-gap electroluminescence in GaAs structures with Ge quantum wellsAleshkin, V. Ya. / Dikareva, N. V. / Dubinov, A. A. / Zvonkov, B. N. / Kudryavtsev, K. E. / Nekorkin, S. M. et al. | 2015
- 174
-
Effects of the electron-electron interaction in the spin resonance in 2D systems with Dresselhaus spin-orbit couplingKrishtopenko, S. S. et al. | 2015
- 181
-
Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wellsArapov, Yu. G. / Gudina, S. V. / Klepikova, A. S. / Neverov, V. N. / Shelushinina, N. G. / Yakunin, M. V. et al. | 2015
- 187
-
Effect of the direct capture of holes with the emission of optical phonons on impurity-photoconductivity relaxation in p-Si:BKozlov, D. V. / Morozov, S. V. / Rumyantsev, V. V. / Tuzov, I. V. / Kudryavtsev, K. E. / Gavrilenko, V. I. et al. | 2015
- 191
-
Exchange enhancement of the electron g factor in strained InGaAs/InP heterostructuresKrishtopenko, S. S. / Maremyanin, K. V. / Kalinin, K. P. / Spirin, K. E. / Gavrilenko, V. I. / Baidus, N. V. / Zvonkov, B. N. et al. | 2015
- 199
-
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1 − x As quantum well with InAs insertsKulbachinskii, V. A. / Oveshnikov, L. N. / Lunin, R. A. / Yuzeeva, N. A. / Galiev, G. B. / Klimov, E. A. / Maltsev, P. P. et al. | 2015
- 209
-
The effect of an excess of components on the electrical properties of indium-antimonide filmsGulyaev, A. M. / Shnitnikov, A. S. et al. | 2015
- 214
-
Antireflective nanostructured zinc oxide arrays produced by pulsed electrodepositionKlochko, N. P. / Klepikova, K. S. / Khrypunov, G. S. / Volkova, N. D. / Kopach, V. R. / Lyubov, V. M. / Kirichenko, M. V. / Kopach, A. V. et al. | 2015
- 224
-
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriersGulyaev, D. V. / Zhuravlev, K. S. / Bakarov, A. K. / Toropov, A. I. et al. | 2015
- 229
-
On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiationVlasenko, A. I. / Baidullaeva, A. / Veleschuk, V. P. / Mozol, P. E. / Boiko, N. I. / Litvin, O. S. et al. | 2015
- 234
-
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum wellGaliev, G. B. / Vasil’evskii, I. S. / Klimov, E. A. / Klochkov, A. N. / Lavruhin, D. V. / Pushkarev, S. S. / Maltsev, P. P. et al. | 2015
- 242
-
Terahertz-emission generation caused by new effects in the 6H-SiC natural superlatticeSankin, V. I. / Andrianov, A. V. / Zakhar’in, A. O. / Petrov, A. G. et al. | 2015
- 247
-
Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocompositesBelyaev, K. G. / Usikova, A. A. / Jmerik, V. N. / Kop’ev, P. S. / Ivanov, S. V. / Toropov, A. A. / Brunkov, P. N. et al. | 2015
- 254
-
Comparative investigation of GaAsSb/InGaAs type-II and InP/InGaAs type-I doped-channel field-effect transistorsWu, Yi-Chen / Tsai, Jung-Hui / Chiang, Te-Kuang / Chiang, Chung-Cheng / Wang, Fu-Min et al. | 2015
- 259
-
Adaptation of the model of tunneling in a metal/CaF2/Si(111) system for use in industrial simulators of MIS devicesVexler, M. I. / Illarionov, Yu. Yu. / Tyaginov, S. E. / Grasser, T. et al. | 2015
- 264
-
Features of photoconversion in highly efficient silicon solar cellsSachenko, A. V. / Shkrebtii, A. I. / Korkishko, R. M. / Kostylyov, V. P. / Kulish, N. R. / Sokolovskyi, I. O. et al. | 2015
- 270
-
Dominant factors of the laser gettering of silicon wafersBokhan, Yu. I. / Kamenkov, V. S. / Tolochko, N. K. et al. | 2015
- 274
-
Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substratesMizerov, A. M. / Kladko, P. N. / Nikitina, E. V. / Egorov, A. Yu. et al. | 2015