Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature (English)
- New search for: Zakhar’in, A. O.
- New search for: Bobylev, A. V.
- New search for: Egorov, S. V.
- New search for: Andrianov, A. V.
- New search for: Zakhar’in, A. O.
- New search for: Bobylev, A. V.
- New search for: Egorov, S. V.
- New search for: Andrianov, A. V.
In:
SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV
;
49
, 3
;
305-308
;
2015
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ISSN:
- Article (Journal) / Print
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Title:Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperature
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Contributors:Zakhar’in, A. O. ( author ) / Bobylev, A. V. ( author ) / Egorov, S. V. ( author ) / Andrianov, A. V. ( author )
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Published in:SEMICONDUCTORS -NEW YORK- C/C OF FIZIKA I TEKHNIKA POLUPROVODNIKOV ; 49, 3 ; 305-308
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Publisher:
- New search for: Springer Science + Business Media
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Publication date:2015-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 537.622
- Further information on Dewey Decimal Classification
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Classification:
DDC: 537.622 -
Source:
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Table of contents – Volume 49, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 279
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First principles calculations of structure parameters and transition pressures of GaN1 − x Bi x alloysAlaya, R. / Mbarki, M. / Rebey, A. et al. | 2015
- 285
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Analysis of the photocurrent relaxation in semi-insulating GaAs in the temperature range of 150–200 KOdrinsky, A. P. et al. | 2015
- 290
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Features of the band structure and conduction mechanisms of n-HfNiSn semiconductor heavily Lu-dopedRomaka, V. A. / Rogl, P. / Romaka, V. V. / Kaczorowski, D. / Stadnyk, Yu. V. / Korzh, R. O. / Krayovskyy, V. Ya. / Kovbasyuk, T. M. et al. | 2015
- 298
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Positronics of radiation-induced effects in chalcogenide glassy semiconductorsShpotyuk, O. / Kozyukhin, S. A. / Shpotyuk, M. / Ingram, A. / Szatanik, R. et al. | 2015
- 305
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Terahertz emission upon the band-to-band excitation of Group-IV semiconductors at room temperatureZakhar’in, A. O. / Bobylev, A. V. / Egorov, S. V. / Andrianov, A. V. et al. | 2015
- 309
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Investigation of surface potential in the V-defect region of MBE Cd x Hg1 − x Te filmNovikov, V. A. / Grigoryev, D. V. et al. | 2015
- 313
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Optical properties of alloys based on II-S and II-Te chalcogenidesKirovskaya, I. A. / Nor, P. E. / Nagibina, I. Yu. / Karpova, E. O. et al. | 2015
- 319
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On precursor self-organization upon the microwave vacuum-plasma deposition of submonolayer carbon coatings on silicon (100) crystalsYafarov, R. K. et al. | 2015
- 325
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Effect of water and a biologically active medium on different modifications of siliconBilenko, D. I. / Belobrovaya, O. Ya. / Galushka, V. V. / Karsakova, Ya. D. / Mel’nikova, T. E. / Mysenko, I. B. / Polyanskaya, V. P. / Terin, D. V. et al. | 2015
- 331
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Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumpingSorokin, S. V. / Gronin, S. V. / Sedova, I. V. / Rakhlin, M. V. / Baidakova, M. V. / Kop’ev, P. S. / Vainilovich, A. G. / Lutsenko, E. V. / Yablonskii, G. P. / Gamov, N. A. et al. | 2015
- 337
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Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrateLovygin, M. V. / Borgardt, N. I. / Kazakov, I. P. / Seibt, M. et al. | 2015
- 345
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Photoelectric characteristics of metal-Ga2O3-GaAs structuresKalygina, V. M. / Vishnikina, V. V. / Petrova, Yu. S. / Prudaev, I. A. / Yaskevich, T. M. et al. | 2015
- 352
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Optical studies of carriers’ vertical transport in the alternately-strained ZnS0.4Se0.6/CdSe superlatticeEvropeytsev, E. A. / Sorokin, S. V. / Gronin, S. V. / Sedova, I. V. / Klimko, G. V. / Ivanov, S. V. / Toropov, A. A. et al. | 2015
- 358
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Emission properties of InGaAs/GaAs heterostructures with quantum wells and dots after irradiation with neutronsBaidus, N. V. / Vikhrova, O. V. / Zvonkov, B. N. / Malysheva, E. I. / Trufanov, A. N. et al. | 2015
- 364
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Electrical properties of Pd-oxide-InP structuresGrebenshchikova, E. A. / Evstropov, V. V. / Il’inskaya, N. D. / Mel’nikov, Yu. S. / Serebrennikova, O. Yu. / Sidorov, V. G. / Sherstnev, V. V. / Yakovlev, Yu. P. et al. | 2015
- 367
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Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxyMynbaev, K. D. / Shilyaev, A. V. / Bazhenov, N. L. / Izhnin, A. I. / Izhnin, I. I. / Mikhailov, N. N. / Varavin, V. S. / Dvoretsky, S. A. et al. | 2015
- 373
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Optical and structural properties of ensembles of colloidal Ag2S quantum dots in gelatinOvchinnikov, O. V. / Smirnov, M. S. / Shapiro, B. I. / Shatskikh, T. S. / Perepelitsa, A. S. / Korolev, N. V. et al. | 2015
- 380
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Photoluminescence kinetics in CdS nanoclusters formed by the Langmuir-Blodgett techniqueZarubanov, A. A. / Zhuravlev, K. S. et al. | 2015
- 387
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Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germaniumFilatov, D. O. / Gorshkov, A. P. / Volkova, N. S. / Guseinov, D. V. / Alyabina, N. A. / Ivanova, M. M. / Chalkov, V. Yu. / Denisov, S. A. / Shengurov, V. G. et al. | 2015
- 394
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Effect of nanoscale tin-dioxide layers on the efficiency of CdS/CdTe-based film solar elementsKhrypunov, G. S. / Pirohov, O. V. / Gorstka, T. A. / Novikov, V. A. / Kovtun, N. A. et al. | 2015
- 401
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Response of semiconductor nonlinear circuits to external perturbationsAliev, K. M. / Kamilov, I. K. / Ibragimov, Kh. O. / Abakarova, N. S. et al. | 2015
- 406
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Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ionsSobolev, N. A. / Danilov, D. V. / Aleksandrov, O. V. / Loshachenko, A. S. / Sakharov, V. I. / Serenkov, I. T. / Shek, E. I. / Trapeznikova, I. N. et al. | 2015
- 409
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Formation of Si nanocrystals in multilayered nanoperiodic Al2O3/SiO x /Al2O3/SiO x /.../Si(100) structures: Synchrotron and photoluminescence dataTurishchev, S. Yu. / Terekhov, V. A. / Koyuda, D. A. / Spirin, D. E. / Parinova, E. V. / Nesterov, D. N. / Grachev, D. A. / Karabanova, I. A. / Ershov, A. V. / Mashin, A. I. et al. | 2015
- 414
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Electrooptical properties and structural features of amorphous ITOAmosova, L. P. et al. | 2015
- 419
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Erratum to: “Growth of EuO/Si and EuO/SrO/Si heteroepitaxial structures by molecular-beam epitaxy”Teterin, P. E. / Averyanov, D. V. / Sadofyev, Yu. G. / Parfenov, O. E. / Likhachev, I. A. / Storchak, V. G. et al. | 2015