$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation (English)
- New search for: Green, A. J.
- New search for: Chabak, K. D.
- New search for: Baldini, M.
- New search for: Moser, N.
- New search for: Gilbert, R.
- New search for: Fitch, R. C.
- New search for: Wagner, G.
- New search for: Galazka, Z.
- New search for: Mccandless, J.
- New search for: Crespo, A.
- New search for: Green, A. J.
- New search for: Chabak, K. D.
- New search for: Baldini, M.
- New search for: Moser, N.
- New search for: Gilbert, R.
- New search for: Fitch, R. C.
- New search for: Wagner, G.
- New search for: Galazka, Z.
- New search for: Mccandless, J.
- New search for: Crespo, A.
In:
IEEE ELECTRON DEVICE LETTERS
;
38
, 6
;
790-793
;
2017
-
ISSN:
- Article (Journal) / Print
-
Title:$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation
-
Contributors:Green, A. J. ( author ) / Chabak, K. D. ( author ) / Baldini, M. ( author ) / Moser, N. ( author ) / Gilbert, R. ( author ) / Fitch, R. C. ( author ) / Wagner, G. ( author ) / Galazka, Z. ( author ) / Mccandless, J. ( author ) / Crespo, A. ( author )
-
Published in:IEEE ELECTRON DEVICE LETTERS ; 38, 6 ; 790-793
-
Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
-
Publication date:2017-01-01
-
Size:4 pages
-
ISSN:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
-
Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 38, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 701
-
Porous Silicon NDR-Based High Power RF Oscillator DiodeLin, Jia-Chuan / Wan, Liang-Fang / Liu, Kuan-Wen / Lo, Kuo-Chang / Yeh, Mei-Ling / Wang, Shui-Jinn et al. | 2017
- 705
-
Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETsLin, Chien-Yu / Chang, Ting-Chang / Liu, Kuan-Ju / Chen, Li-Hui / Tsai, Jyun-Yu / Chen, Ching-En / Lu, Ying-Hsin / Liu, Hsi-Wen / Liao, Jih-Chien / Chang, Kuan-Chang et al. | 2017
- 708
-
Undoped and Doped Junctionless FETs: Source/Drain Contacts and Immunity to Random Dopant FluctuationChen, Liang-Yu / Hsieh, Yu-Feng / Kao, Kuo-Hsing et al. | 2017
- 712
-
Resistor-Triggered SCR Device for ESD Protection in High-Speed I/O Interface CircuitsLin, Chun-Yu / Chen, Chun-Yu et al. | 2017
- 716
-
n+Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating InterlayerLiu, Tony Chi / Kabuyanagi, Shoichi / Nishimura, Tomonori / Yajima, Takeaki / Toriumi, Akira et al. | 2017
- 720
-
A Thru-Halfthru-Short De-Embedding Method for Millimeter-Wave On-Wafer HBT CharacterizationLi, Xiao / Zhang, Yong / Li, Oupeng / Ren, Tianhao / Guo, Fangzhou / Lu, Haiyan / Cheng, Wei / Xu, Ruimin et al. | 2017
- 724
-
Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si SubstrateSon, Seung-Woo / Park, Jung Ho / Baek, Ji-Min / Kim, Do-Kwyn / Lee, Seung Ryul / Lee, Sang-Moon / Yoon, Jieon / Kim, Jungtaek / Song, Woo-Bin / Kim, Sunjung et al. | 2017
- 728
-
Hydrogen-Induced Oxygen Vacancy Bistability and Its Impact on RRAM Device OperationJung, Keumdong / Magyari-Kope, Blanka / Nishi, Yoshio et al. | 2017
- 732
-
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic ApplicationsOh, Seungyeol / Kim, Taeho / Kwak, Myunghoon / Song, Jeonghwan / Woo, Jiyong / Jeon, Sanghun / Yoo, In Kyeong / Hwang, Hyunsang et al. | 2017
- 736
-
Impact of RRAM Read Fluctuations on the Program-Verify ApproachNminibapiel, David M. / Veksler, Dmitry / Shrestha, Pragya R. / Campbell, Jason P. / Ryan, Jason T. / Baumgart, Helmut / Cheung, Kin P. et al. | 2017
- 740
-
Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform EngineeringPanwar, Neeraj / Rajendran, Bipin / Ganguly, Udayan et al. | 2017
- 744
-
A Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various SubstratesHan, Chuan Yu / Ma, Yuan Xiao / Tang, Wing Man / Wang, Xiao Li / Lai, P. T. et al. | 2017
- 748
-
Bias Stress Stability Improvement in Solution-Processed Low-Voltage Organic Field-Effect Transistors Using Relaxor Ferroelectric Polymer Gate DielectricTang, Wei / Zhao, Jiaqing / Huang, Yukun / Ding, Li / Li, Qiaofeng / Li, Jinhua / You, Peng / Yan, Feng / Guo, Xiaojun et al. | 2017
- 752
-
High Performance Monolithically Integrated GaN Driving VMOSFET on LEDLu, Xing / Liu, Chao / Jiang, Huaxing / Zou, Xinbo / Lau, Kei May et al. | 2017
- 756
-
Amorphous TiO2-Based Thin-Film PhototransistorLiu, Han-Yin / Huang, Ruei-Chin / Li, Yi-Ying / Lee, Ching-Sung / Hsu, Wei-Chou et al. | 2017
- 760
-
A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED DisplaysShin, Woo-Sul / Ahn, Hyun-A / Na, Jun-Seok / Hong, Seong-Kwan / Kwon, Oh-Kyong / Lee, Ji-Hun / Um, Jae-Gwang / Jang, Jin / Kim, Sung-Hwan / Lee, Jeong-Soo et al. | 2017
- 763
-
Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power DiodesFu, Houqiang / Huang, Xuanqi / Chen, Hong / Lu, Zhijian / Zhang, Xiaodong / Zhao, Yuji et al. | 2017
- 767
-
Analytical Calculation of Breakdown Voltage for Dielectric RESURF Power DevicesSabui, Gourab / Shen, Z. John et al. | 2017
- 771
-
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power ApplicationsLin, Yen-Ku / Noda, Shuichi / Huang, Chia-Ching / Lo, Hsiao-Chieh / Wu, Chia-Hsun / Luc, Quang Ho / Chang, Po-Chun / Hsu, Heng-Tung / Samukawa, Seiji / Chang, Edward Yi et al. | 2017
- 775
-
Ge-Doped ${\beta }$ -Ga2O3 MOSFETsMoser, Neil / McCandless, Jonathan / Crespo, Antonio / Leedy, Kevin / Green, Andrew / Neal, Adam / Mou, Shin / Ahmadi, Elaheh / Speck, James / Chabak, Kelson et al. | 2017
- 779
-
AlGaN/GaN MOS-HEMT Device Fabricated Using a High Quality PECVD Passivation ProcessChakroun, Ahmed / Jaouad, Abdelatif / Soltani, Ali / Arenas, Osvaldo / Aimez, Vincent / Ares, Richard / Maher, Hassan et al. | 2017
- 783
-
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier DiodesSasaki, Kohei / Wakimoto, Daiki / Thieu, Quang Tu / Koishikawa, Yuki / Kuramata, Akito / Higashiwaki, Masataka / Yamakoshi, Shigenobu et al. | 2017
- 786
-
Diamond Field Effect Transistors With MoO3 Gate DielectricRen, Zeyang / Zhang, Jinfeng / Zhang, Jincheng / Zhang, Chunfu / Xu, Shengrui / Li, Yao / Hao, Yue et al. | 2017
- 790
-
$\beta$ -Ga2O3 MOSFETs for Radio Frequency OperationGreen, Andrew Joseph / Chabak, Kelson D. / Baldini, Michele / Moser, Neil / Gilbert, Ryan / Fitch, Robert C. / Wagner, Gunter / Galazka, Zbigniew / Mccandless, Jonathan / Crespo, Antonio et al. | 2017
- 794
-
A Superjunction U-MOSFET With SIPOS Pillar Breaking Superjunction Silicon Limit by TCAD Simulation StudyCao, Zhen / Duan, Baoxing / Shi, Tongtong / Yuan, Song / Yang, Yintang et al. | 2017
- 798
-
Characterization of LOCOS Field Oxide on 4H-SiC Formed by Ar Preamorphization Ion ImplantationTseng, Yuan-Hung / Lin, Chung-Yu / Tsui, Bing-Yue et al. | 2017
- 802
-
Non-Reciprocal Acoustic Transmission in a GaN Delay Line Using the Acoustoelectric EffectZhu, Haoshen / Rais-Zadeh, Mina et al. | 2017
- 806
-
Ultra-High Sensitivity Humidity Sensor Based on MoS2/Ag Composite FilmsLi, Ning / Chen, Xiang-Dong / Chen, Xin-Peng / Ding, Xing / Zhao, Xuan et al. | 2017
- 810
-
High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET TechnologyJankovic, Nebojsa / Kryvchenkova, Olga / Batcup, Steve / Igic, Petar et al. | 2017
- 814
-
Energy Minimization and Kirchhoff’s Laws in Negative Capacitance Ferroelectric Capacitors and MOSFETsRollo, Tommaso / Esseni, David et al. | 2017
- 818
-
Experimental Investigation of ${C}$ – ${V}$ Characteristics of Si Tunnel FETsLiu, Chang / Glass, Stefan / Luong, Gia Vinh / Narimani, Keyvan / Han, Qinghua / Tiedemann, Andreas T. / Fox, Alfred / Yu, Wenjie / Wang, Xi / Mantl, Siegfried et al. | 2017
- 822
-
EDS Meetings Calendar| 2017
- 825
-
IEEE Electron Device Letters information for authors| 2017
- 826
-
Special Issue of IEEE Transactions on Electron Devices on Vacuum Electronics| 2017
- 827
-
Table of contents| 2017
- C2
-
IEEE Electron Device Letters| 2017