Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures (English)
- New search for: Ying, H.
- New search for: Dark, J.
- New search for: Omprakash, A. P.
- New search for: Wier, B. R.
- New search for: Ge, L.
- New search for: Raghunathan, U.
- New search for: Lourenco, N. E.
- New search for: Fleetwood, Z. E.
- New search for: Mourigal, M.
- New search for: Davidovic, D.
- New search for: Ying, H.
- New search for: Dark, J.
- New search for: Omprakash, A. P.
- New search for: Wier, B. R.
- New search for: Ge, L.
- New search for: Raghunathan, U.
- New search for: Lourenco, N. E.
- New search for: Fleetwood, Z. E.
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In:
IEEE TRANSACTIONS ON ELECTRON DEVICES
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65
, 9
;
3697-3703
;
2018
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ISSN:
- Article (Journal) / Print
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Title:Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures
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Contributors:Ying, H. ( author ) / Dark, J. ( author ) / Omprakash, A. P. ( author ) / Wier, B. R. ( author ) / Ge, L. ( author ) / Raghunathan, U. ( author ) / Lourenco, N. E. ( author ) / Fleetwood, Z. E. ( author ) / Mourigal, M. ( author ) / Davidovic, D. ( author )
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Published in:IEEE TRANSACTIONS ON ELECTRON DEVICES ; 65, 9 ; 3697-3703
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2018-01-01
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Size:7 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3 / 621
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Table of contents – Volume 65, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3588
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Methods for Determining the Collector Series Resistance in SiGe HBTs—A Review and Evaluation Across Different TechnologiesPawlak, Andreas / Krause, Julia / Schroter, Michael et al. | 2018
- 3600
-
Regaining Switching by Overcoming Single-Transistor Latch in Ge Junctionless MOSFETsGupta, Manish / Kranti, Abhinav et al. | 2018
- 3608
-
Analysis and Modeling of Temperature and Bias Dependence of Current Mismatch in Halo-Implanted MOSFETsGupta, Chetan / Dey, Sagnik / Agarwal, Harshit / Goel, Ravi / Hu, Chenming / Chauhan, Yogesh Singh et al. | 2018
- 3617
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Cryogenic MOS Transistor ModelBeckers, Arnout / Jazaeri, Farzan / Enz, Christian et al. | 2018
- 3626
-
Thermal Resistance Characterization for Multifinger SOI-MOSFETsGonzalez, Benito / Rodriguez, Raul / Lazaro, Antonio et al. | 2018
- 3633
-
Analytical Multistage Thermal Model for FEOL Reliability Considering Self-and Mutual-HeatingChen, Wangyong / Cai, Linlin / Zhao, Kai / Zhang, Xing / Liu, Xiaoyan / Du, Gang et al. | 2018
- 3640
-
A Novel Approach to Control Source/Drain Cavity Profile for Device Performance ImprovementLo, Hsien-Ching / Peng, Jianwei / Reis, Edward / Zhu, Baofu / Ma, Wei / Mun, Seong Yeol / Shintri, Shashidhar / Bazizi, El Mehdi / Gaire, Churamani / Qi, Yi et al. | 2018
- 3646
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Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-HeatingBadami, O. / Lizzit, D. / Driussi, F. / Palestri, P. / Esseni, D. et al. | 2018
- 3654
-
OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFETTiwari, Vishal A. / Divakaruni, Rama / Hook, Terence B. / Nair, Deleep R. et al. | 2018
- 3662
-
As-grown-Generation Model for Positive Bias Temperature InstabilityGao, Rui / Ji, Zhigang / Zhang, Jian Fu / Marsland, John / Zhang, Wei Dong et al. | 2018
- 3669
-
Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With UnderlapJaiswal, Nivedita / Kranti, Abhinav et al. | 2018
- 3676
-
TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise PerspectiveSimoen, Eddy / O'sullivan, Barry / Ritzenthaler, Romain / Dentoni Litta, Eugenio / Schram, Tom / Horiguchi, Naoto / Claeys, Cor et al. | 2018
- 3682
-
Cryogenic Characterization of 28-nm FD-SOI Ring Oscillators With Energy Efficiency OptimizationBohuslavskyi, H. / Barraud, S. / Barral, V. / Casse, M. / Le Guevel, L. / Hutin, L. / Bertrand, B. / Crippa, A. / Jehl, X. / Pillonnet, G. et al. | 2018
- 3689
-
On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS StackPutcha, Vamsi / Franco, Jacopo / Vais, Abhitosh / Sioncke, Sonja / Kaczer, Ben / Linten, Dimitri / Groeseneken, Guido et al. | 2018
- 3697
-
Collector Transport in SiGe HBTs Operating at Cryogenic TemperaturesYing, Hanbin / Dark, Jason / Omprakash, Anup P. / Wier, Brian R. / Ge, Luwei / Raghunathan, Uppili / Lourenco, Nelson E. / Fleetwood, Zachary E. / Mourigal, Martin / Davidovic, Dragomir et al. | 2018
- 3704
-
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THzWeimann, Nils G. / Johansen, Tom K. / Stoppel, Dimitri / Matalla, Matthias / Brahem, Mohamed / Nosaeva, Ksenia / Boppel, Sebastian / Volkmer, Nicole / Ostermay, Ina / Krozer, Viktor et al. | 2018
- 3711
-
Dielectric Engineering of HfO2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon SubstratesChandrasekar, Hareesh / Kumar, Sandeep / Ganapathi, Kolla Lakshmi / Prabhu, Shreesha / Dolmanan, Surani Bin / Tripathy, Sudhiranjan / Raghavan, Srinivasan / Bhat, K. N. / Mohan, Sangeneni / Muralidharan, Rangarajan et al. | 2018
- 3719
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Impact of Different Gate Biases on Irradiation and Annealing Responses of SiC MOSFETsHu, Dongqing / Zhang, Jingwei / Jia, Yunpeng / Wu, Yu / Peng, Ling / Tang, Yun et al. | 2018
- 3725
-
Thermally Grown TiO2 and Al2O3 for GaN-Based MOS-HEMTsRawat, Akanksha / Meer, Mudassar / Surana, Vivek kumar / Bhardwaj, Navneet / Pendem, Vikas / Garigapati, Navya Sri / Yadav, Yogendra / Ganguly, Swaroop / Saha, Dipankar et al. | 2018
- 3732
-
Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETsLukens, Gerrit / Hahn, Herwig / Kalisch, Holger / Vescan, Andrei et al. | 2018
- 3739
-
Effects of Rapid Thermal Annealing on Ar Inductively Coupled Plasma-Treated n-Type 4H-SiC Schottky and Ohmic ContactsCheng, Jung-Chien / Tsui, Bing-Yue et al. | 2018
- 3746
-
“Kink” in AlGaN/GaN-HEMTs: Floating Buffer ModelSingh, Manikant / Uren, Michael J. / Martin, Trevor / Karboyan, Serge / Chandrasekar, Hareesh / Kuball, Martin et al. | 2018
- 3754
-
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator SubstrateLei, Dian / Lee, Kwang Hong / Huang, Yi-Chiau / Wang, Wei / Masudy-Panah, Saeid / Yadav, Sachin / Kumar, Annie / Dong, Yuan / Kang, Yuye / Xu, Shengqiang et al. | 2018
- 3762
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Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo ContactsZhao, Xin / Heidelberger, Christopher / Fitzgerald, Eugene A. / Lu, Wenjie / Vardi, Alon / del Alamo, Jesus A. et al. | 2018
- 3769
-
High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention PenaltyAli, T. / Polakowski, P. / Riedel, S. / Buttner, T. / Kampfe, T. / Rudolph, M. / Patzold, B. / Seidel, K. / Lohr, D. / Hoffmann, R. et al. | 2018
- 3775
-
Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access MemoryLin, Chun-An / Dai, Guang-Jyun / Tseng, Tseung-Yuen et al. | 2018
- 3780
-
Switching Voltage Analysis of Nanoelectromechanical Memory Switches for Monolithic 3-D CMOS-NEM Hybrid Reconfigurable Logic CircuitsLee, Ho Moon / Jo, Hyun Chan / Kwon, Hyug Su / Choi, Woo Young et al. | 2018
- 3786
-
Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film TransistorsNguyen, Manh-Cuong / Nguyen, An Hoang Thuy / Ji, Hyungmin / Cheon, Jonggyu / Kim, Jin-Hyun / Yu, Kyoung-Moon / Cho, Seong-Yong / Kim, Sang-Woo / Choi, Rino et al. | 2018
- 3791
-
Flexible ZnO Thin-Film Transistors on Thin Copper SubstrateHuo, Wenxing / Mei, Zengxia / Zhao, Minglong / Sui, Yanxin / Zhao, Bin / Zhang, Yonghui / Wang, Tao / Cui, Shujuan / Liang, Huili / Jia, Haiqiang et al. | 2018
- 3796
-
Flexible In–Ga–Zn–O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser WritingPetti, Luisa / Greco, Emanuel / Cantarella, Giuseppe / Munzenrieder, Niko / Vogt, Christian / Troster, Gerhard et al. | 2018
- 3803
-
The Effect of the Original Thickness of Ag in the Graphene–Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDsChen, Wei / Zhou, Yugang / Yu, Xianzheng / Xie, Zili / Zhang, Rong / Zheng, Youdou et al. | 2018
- 3809
-
Integrated Thin-Film Radiation Detectors and In-Pixel AmplificationAvila-Avendano, Carlos / Mejia, Israel / Garcia-Lozano, Rodolfo / Reyes, Luis E. / Rozhdestvenskyy, Sergiy / Pham, Christopher / Pradhan, Bhabendra / Gnade, Bruce E. / Quevedo-Lopez, Manuel A. et al. | 2018
- 3816
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48-Channel Matrix Optical Transmitter on a Single Direct Fiber ConnectorLi, Chenhui / Zhang, Xi / Li, Teng / Raz, Oded / Stabile, Ripalta et al. | 2018
- 3823
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A 125-klx Background Light Subtraction Architecture for 2-D and Time-of-Flight 3-D CamerasAnand, Chandani / Priyadarshini, Neha / Jainwal, Kapil / Sarkar, Mukul et al. | 2018
- 3831
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Hole-Induced Threshold Voltage Shift Under Reverse-Bias Stress in E-Mode GaN MIS-FETHua, Mengyuan / Wei, Jin / Bao, Qilong / Zheng, Zheyang / Zhang, Zhaofu / He, Jiabei / Chen, Kevin Jing et al. | 2018
- 3839
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The Investigation of an IGBT With Hole-Carrier Movement ControlLi, Junhong / Xiao, Kun / Hu, Bin / Liu, Kuifang / Zeng, Rongzhou et al. | 2018
- 3848
-
Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- ${k}$ Passivation Layer and High Acceptor Density in Buffer LayerKabemura, Toshiki / Ueda, Shingo / Kawada, Yuki / Horio, Kazushige et al. | 2018
- 3855
-
Failure Mechanism of a Low-Energy-Triggered Bulk Gallium Arsenide Avalanche Semiconductor Switch: Simulated Analysis and Experimental ResultsHu, Long / Su, Jiancang / Qiu, Ruicheng / Fang, Xu / Wang, Jingxuan et al. | 2018
- 3862
-
Optimization of ${V}_{\text{CE}}$ Plateau for Deep-Oxide Trench SOI Lateral IGBT During Inductive Load Turn-OFFZhang, Long / Zhu, Jing / Cao, Shilin / Ma, Jie / Li, Shaohong / Liu, Siyang / Sun, Weifeng / Zhao, Jianfeng / Shi, Longxing et al. | 2018
- 3869
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Doping Profile Optimization for Power Devices Using Topology OptimizationNomura, Katsuya / Kondoh, Tsuguo / Ishikawa, Tsuyoshi / Yamasaki, Shintaro / Yaji, Kentaro / Fujita, Kikuo et al. | 2018
- 3878
-
Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETsWolf, Mihaela / Hilt, Oliver / Wurfl, Joachim et al. | 2018
- 3884
-
Understanding Electromigration in Cu-CNT Composite Interconnects: A Multiscale Electrothermal Simulation StudyLee, Jaehyun / Berrada, Salim / Adamu-Lema, Fikru / Nagy, Nicole / Georgiev, Vihar P. / Sadi, Toufik / Liang, Jie / Ramos, Raphael / Carrillo-Nunez, Hamilton / Kalita, Dipankar et al. | 2018
- 3893
-
Edge-Oxidized Germanene Nanoribbons for Nanoscale Metal Interconnect ApplicationsSharma, Varun / Srivastava, Pankaj / Jaiswal, Neeraj K. et al. | 2018
- 3901
-
Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) InterlayerMaril, Elif / Tan, Serhat Orkun / Altindal, Semsettin / Uslu, Ibrahim et al. | 2018
- 3909
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Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FETLiang, Yuhua / Li, Xueqing / George, Sumitha / Srinivasa, Srivatsa / Zhu, Zhangming / Gupta, Sumeet Kumar / Datta, Suman / Narayanan, Vijaykrishnan et al. | 2018
- 3915
-
Detection of Hot Carrier Generated Phonon Using the Gate-Induced Drain Leakage in the Silicon ChipYoo, Nak Won / Yun, Jun Yeon / Park, Young June et al. | 2018
- 3922
-
Assessing Lock-On Physics in Semi-Insulating GaAs and InP Photoconductive Switches Triggered by Subbandgap ExcitationChowdhury, Animesh R. / Ness, Richard / Joshi, Ravi P. et al. | 2018
- 3930
-
Transient Analysis for Electrothermal Properties in Nanoscale TransistorsCheng, Aiqiang / Chen, Shitao / Zeng, Hui / Ding, Dazhi / Chen, Rushan et al. | 2018
- 3936
-
A Closed-Form Expression of the Drain Current of Asymmetric Double-Gate OTFTsColalongo, Luigi et al. | 2018
- 3943
-
Simple and Fast Approach for Synthesis of Reduced Graphene Oxide–MoS2 Hybrids for Room Temperature Gas DetectionKumar, Rajesh / Dias, Wagner / Rubira, Rafael J. G. / Alaferdov, Andrei V. / Vaz, Alfredo R. / Singh, Rajesh K. / Teixeira, Silvio R. / Constantino, Carlos J. L. / Moshkalev, Stanislav A. et al. | 2018
- 3950
-
An Accurate TCAD-Based Model for ISFET SimulationMohammadi, Ehsan / Manavizadeh, Negin et al. | 2018
- 3957
-
The Nonlinear Analysis on a 210/240/270-GHz Megawatt-Class Gyrotron for DEMOsLiu, Qiao / Niu, Xinjian / Wang, Lina / Liu, Yinghui / Zhao, Jianing / Xu, Jianhua et al. | 2018
- 3963
-
A 45-GHz/20-kW Gyrotron-Based Microwave Setup for the Fourth-Generation ECR Ion SourcesDenisov, Gregory G. / Glyavin, Mikhail Yu / Tsvetkov, Alexander I. / Eremeev, Anatoly G. / Kholoptsev, Vladislav V. / Plotnikov, Ivan V. / Bykov, Yuri V. / Orlov, Victor B. / Morozkin, Mikhail V. / Shmelev, Mikhail Yu et al. | 2018
- 3970
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Study of Performance Improvement for a ${Q}$ -Band Sheet-Beam Traveling-Wave TubeShu, Guoxiang / Wang, Jianxun / Liu, Guo / Qian, Zhengfang et al. | 2018
- 3976
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Improved Synaptic Behavior of CBRAM Using Internal Voltage Divider for Neuromorphic SystemsLim, Seokjae / Kwak, Myounghoon / Hwang, Hyunsang et al. | 2018
- 3982
-
Electrically Driven Insulator–Metal Transition-Based Devices—Part I: The Electrothermal Model and Experimental Analysis for the DC CharacteristicsLin, Jianqiang / Ramanathan, Shriram / Guha, Supratik et al. | 2018
- 3989
-
Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient CharacteristicsLin, Jianqiang / Ramanathan, Shriram / Guha, Supratik et al. | 2018
- 3996
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Modeling and System-Level Simulation for Nonideal Conductance Response of Synaptic DevicesGi, Sang-Gyun / Yeo, Injune / Chu, Myonglae / Moon, Kibong / Hwang, Hyunsang / Lee, Byung-geun et al. | 2018
- 4004
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Enhancement-Mode Recessed Gate and Cascode Gate Junctionless Nanowire With Low-Leakage and High-Drive CurrentWong, Hiu Yung / Braga, Nelson / Mickevicius, R. V. et al. | 2018
- 4009
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Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum ConfinementShalchian, Majid / Jazaeri, Farzan / Sallese, Jean-Michel et al. | 2018
- 4015
-
DIBL–Compensated Extraction of the Channel Length Modulation Coefficient in MOSFETsHiblot, Gaspard et al. | 2018
- 4019
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Comments on “Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs”Ortiz-Conde, Adelmo / Garcia-Sanchez, Francisco J. et al. | 2018
- 4022
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Reply to Comments by Ortiz-Conde et al.Kim, Gun-Hee / Bae, Hagyoul / Hur, Jae / Kim, Choong-Ki / Lee, Geon-Bum / Bang, Tewook / Choi, Yang-Kyu et al. | 2018
- 4025
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices| 2018
- 4026
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Introducing IEEE Collabratec| 2018
- 4027
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Together, we are advancing technology| 2018
- 4028
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