Impact of Contact Resistance on the f~T and f~m~a~x of Graphene Versus MoS~2 Transistors (English)
- New search for: Holland, K. D.
- New search for: Alam, A. U.
- New search for: Paydavosi, N.
- New search for: Wong, M.
- New search for: Rogers, C. M.
- New search for: Rizwan, S.
- New search for: Kienle, D.
- New search for: Vaidyanathan, M.
- New search for: Holland, K. D.
- New search for: Alam, A. U.
- New search for: Paydavosi, N.
- New search for: Wong, M.
- New search for: Rogers, C. M.
- New search for: Rizwan, S.
- New search for: Kienle, D.
- New search for: Vaidyanathan, M.
In:
IEEE transactions on nanotechnology
;
16
, 1
;
94-106
;
2017
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ISSN:
- Article (Journal) / Print
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Title:Impact of Contact Resistance on the f~T and f~m~a~x of Graphene Versus MoS~2 Transistors
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Contributors:Holland, K. D. ( author ) / Alam, A. U. ( author ) / Paydavosi, N. ( author ) / Wong, M. ( author ) / Rogers, C. M. ( author ) / Rizwan, S. ( author ) / Kienle, D. ( author ) / Vaidyanathan, M. ( author )
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Published in:IEEE transactions on nanotechnology ; 16, 1 ; 94-106
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Publisher:
- New search for: IEEE
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Publication date:2017-01-01
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Size:13 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 16, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Table of Contents| 2017
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Growth Mechanism of Vanadium (II) Oxide NanowiresKysar, Jesse Steven / Wignes, Francesca L. / Sekhar, Praveen Kumar et al. | 2017
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Suppressed Hysteretic Field Emission From Polymer Encapsulated Silver NanowiresCole, Matthew T. / Coskun, Sahin / Parmee, Richard J. / Hiralal, Pritesh / Cepek, Cinzia / Robertson, Alexander W. / Li, Chi / Dai, Qing / Warner, Jamie H. / Milne, William I. et al. | 2017
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A New Short-Channel-Effect-Degraded Subthreshold Behavior Model for Double-Fin Multichannel FETs (DFMcFETs)Chiang, Te-Kuang et al. | 2017
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Mechanical Properties Tunability of Three-Dimensional Polymeric Structures in Two-Photon LithographyLemma, Enrico Domenico / Rizzi, Francesco / Dattoma, Tommaso / Spagnolo, Barbara / Sileo, Leonardo / Qualtieri, Antonio / De Vittorio, Massimo / Pisanello, Ferruccio et al. | 2017
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Energy-Efficient Nonvolatile Reconfigurable Logic Using Spin Hall Effect-Based Lookup TablesZand, Ramtin / Roohi, Arman / Fan, Deliang / DeMara, Ronald F. et al. | 2017
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Electrical and Ultraviolet-A Detection Properties of E-Beam Evaporated n-TiO2 Capped p-Si Nanowires Heterojunction PhotodiodesRawat, Gopal / Somvanshi, Divya / Kumar, Yogesh / Kumar, Hemant / Kumar, Chandan / Jit, Satyabrata et al. | 2017
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Investigation of Negative Capacitance Gate-all-Around Tunnel FETs Combining Numerical Simulation and Analytical ModelingJiang, Chunsheng / Liang, Renrong / Xu, Jun et al. | 2017
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Design of a Multilayer Graphene-Based Ultrawideband Terahertz AbsorberFardoost, Alireza / Vanani, Fatemeh Ghaedi / Amirhosseini, Asad / Safian, Reza et al. | 2017
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Frequency Analysis of Dopant Profiling and Capacitance Spectroscopy Using Scanning Microwave MicroscopyBrinciotti, Enrico / Campagnaro, Giulio / Badino, Giorgio / Kasper, Manuel / Gramse, Georg / Tuca, Silviu Sorin / Smoliner, Juergen / Schweinboeck, Thomas / Hommel, Soeren / Kienberger, Ferry et al. | 2017
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Comparison of TFETs and CMOS Using Optimal Design Points for Power–Speed TradeoffsNunez, Juan / Avedillo, Maria J. et al. | 2017
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An Algorithm for Extraction of Threshold Voltage in Heterojunction TFETsGoswami, Rupam / Bhowmick, Brinda et al. | 2017
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Impact of Contact Resistance on the f~T and f~m~a~x of Graphene Versus MoS~2 TransistorsHolland, K. D. / Alam, A. U. / Paydavosi, N. / Wong, M. / Rogers, C. M. / Rizwan, S. / Kienle, D. / Vaidyanathan, M. et al. | 2017
- 94
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Impact of Contact Resistance on the $f_T$ and $f_{\max}$ of Graphene Versus $\text{MoS}_2$ TransistorsHolland, Kyle D. / Alam, Ahsan U. / Paydavosi, Navid / Wong, Michael / Rogers, Christopher M. / Rizwan, Shahriar / Kienle, Diego / Vaidyanathan, Mani et al. | 2017
- 107
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Analysis of Crosstalk Effects for Multiwalled Carbon Nanotube Bundle Interconnects in Ternary Logic and Comparison With Cu InterconnectsRezaei Khezeli, Maryam / Moaiyeri, Mohammad Hossein / Jalali, Ali et al. | 2017
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Analysis of High-Field Hole Transport in Germanium and Silicon Nanowires Based on Boltzmann's Transport EquationTanaka, Hajime / Suda, Jun / Kimoto, Tsunenobu et al. | 2017
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A Simple Method for Porosity Estimation at NanoscaleRamezani Sani, Saeideh / Saeedian, Meghdad / Mortezaali, Abdollah / Jafari, G. R. et al. | 2017
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Fabrication of Vertical Silicon Nanotube Array Using Spacer Patterning Technique and Metal-Assisted Chemical EtchingJeong, Hyeonho / Lee, Junghyung / Bok, Cheolkyu / Lee, Seok-Hee / Yoo, Seunghyup et al. | 2017
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Performance of Nanocrystal ZnO Thin-Film Schottky Contacts on Cu by Atomic Layer DepositionShen, Mei / Afshar, Amir / Tsui, Ying Yin / Cadien, Kenneth C. / Barlage, Douglas W. et al. | 2017
- 140
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Graphene Field-Effect Transistors for In Vitro and Ex Vivo RecordingsKireev, Dmitry / Zadorozhnyi, Ihor / Qiu, Tianyu / Sarik, Dario / Brings, Fabian / Wu, Tianru / Seyock, Silke / Maybeck, Vanessa / Lottner, Martin / Blaschke, Benno M. et al. | 2017
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Low Store Power High-Speed High-Density Nonvolatile SRAM Design With Spin Hall Effect-Driven Magnetic Tunnel JunctionsKang, Wang / Lv, Weifeng / Zhang, Youguang / Zhao, Weisheng et al. | 2017
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Introducing IEEE Collabratec| 2017
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Imagine a community hopeful for the future| 2017
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IEEE Transactions on Nanotechnology publication information| 2017
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IEEE Transactions on Nanotechnology information for authors| 2017