Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS~2 devices (English)
- New search for: Salgado, Ruben
- New search for: Mohammadzadeh, Amirmahdi
- New search for: Kargar, Fariborz
- New search for: Geremew, Adane
- New search for: Huang, Chun-Yu
- New search for: Bloodgood, Matthew A.
- New search for: Rumyantsev, Sergey
- New search for: Salguero, Tina T.
- New search for: Balandin, Alexander A.
- New search for: Salgado, Ruben
- New search for: Mohammadzadeh, Amirmahdi
- New search for: Kargar, Fariborz
- New search for: Geremew, Adane
- New search for: Huang, Chun-Yu
- New search for: Bloodgood, Matthew A.
- New search for: Rumyantsev, Sergey
- New search for: Salguero, Tina T.
- New search for: Balandin, Alexander A.
In:
Applied physics express
;
12
, 3
;
037001-037001
;
2019
-
ISSN:
- Article (Journal) / Print
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Title:Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS~2 devices
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Contributors:Salgado, Ruben ( author ) / Mohammadzadeh, Amirmahdi ( author ) / Kargar, Fariborz ( author ) / Geremew, Adane ( author ) / Huang, Chun-Yu ( author ) / Bloodgood, Matthew A. ( author ) / Rumyantsev, Sergey ( author ) / Salguero, Tina T. ( author ) / Balandin, Alexander A. ( author )
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Published in:Applied physics express ; 12, 3 ; 037001-037001
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Publisher:
- New search for: JAPAN SOCIETY OF APPLIED PHYSICS
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Publication date:2019-01-01
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Size:1 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.05
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.05 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 12, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
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Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealingKobayashi, Takuma / Tachiki, Keita / Ito, Koji / Kimoto, Tsunenobu et al. | 2019
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Stress engineering on the electronic and spintronic properties for a GaSe/HfSe~2 van der Waals heterostructureKe, Congming / Tang, Weiqing / Zhou, Jiangpeng / Wu, Zhiming / Li, Xu / Zhang, Chunmiao / Wu, Yaping / Yang, Weihuang / Kang, Junyong et al. | 2019
- 031003
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Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV sourceHorikiri, Fumimasa / Fukuhara, Noboru / Ohta, Hiroshi / Asai, Naomi / Narita, Yoshinobu / Yoshida, Takehiro / Mishima, Tomoyoshi / Toguchi, Masachika / Miwa, Kazuki / Sato, Taketomo et al. | 2019
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Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layerIwata, Kenji / Narita, Tetsuo / Nagao, Masahiro / Tomita, Kazuyoshi / Kataoka, Keita / Kachi, Tetsu / Ikarashi, Nobuyuki et al. | 2019
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Optical manipulation with electric and magnetic transverse spin through multilayered focused configurationShi, Peng / Du, Luping / Yuan, Xiaocong et al. | 2019
- 032002
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Estimating internal quantum efficiency of light-emitting diodes from current—voltage curvesMi, Chenziyi / Wang, Lai / Jin, Jie / Hao, Zhibiao / Luo, Yi / Sun, Changzheng / Han, Yanjun / Xiong, Bing / Wang, Jian / Li, Hongtao et al. | 2019
- 032003
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Saturable absorption in graphene-on-waveguide devicesWang, Jiaqi / Zhang, Liang / Chen, Yuzhi / Geng, Youfu / Hong, Xueming / Li, Xuejin / Cheng, Zhenzhou et al. | 2019
- 032004
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GaN-on-Si resonant-cavity light-emitting diode incorporating top and bottom dielectric distributed Bragg reflectorsCai, Wei / Yuan, Jialei / Ni, Shuyu / Shi, Zheng / Zhou, Weidong / Liu, Yuhuai / Wang, Yongjin / Amano, Hiroshi et al. | 2019
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InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93 μmLiu, Jie / Lu, Jinlei / Yue, Chen / Li, Xuanzhang / Chen, Hong / Wang, Lu et al. | 2019
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Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysisHan, Dong-Pyo / Yamamoto, Kengo / Ishimoto, Seiji / Iwaya, Motoaki / Takeuchi, Tetsuya / Kamiyama, Satoshi / Akasaki, Isamu et al. | 2019
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Gradual tuning of the terahertz passband using a square-loop metamaterial based on a W-doped VO~2 thin filmShin, Jun-Hwan / Han, Sang-Pil / Song, Minhyup / Ryu, Han-Cheol et al. | 2019
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926 nm Yb-doped fiber femtosecond laser system for two-photon microscopyWang, Pinghe / Xu, Xin / Guo, Zhengru / Jin, Xingjie / Shi, Guohua et al. | 2019
- 032009
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Tunable ultra-broadband anisotropic absorbers based on multi-layer black phosphorus ribbonsZhu, Yiqi / Tang, Bin / Jiang, Chun et al. | 2019
- 032010
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High-efficiency generation of a low-noise laser at 447 nmZuo, Xiaojie / Yan, Zhihui / Jia, Xiaojun et al. | 2019
- 032011
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Plasmon-induced reflection and its application for all-optical diode based on paralleled double-stub resonatorsLiu, Bin / Liao, Yun-Cheng / Hu, Jin-Feng / Liu, Juan / He, Xing-Dao / Chen, Zhong-Ping et al. | 2019
- 033001
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Effect of interfacial insertion layers on the spin—orbit torque in W(O)|CoFeB heterostructuresZhang, Jie / Phung, Timothy / Hughes, Brian P. / Yang, See-Hun / Garg, Chirag / Jiang, Yong / Parkin, Stuart S. P. et al. | 2019
- 033002
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Room-temperature local magnetoresistance effect in n-Ge devices with low-resistive Schottky-tunnel contactsTsukahara, Makoto / Yamada, Michihiro / Naito, Takahiro / Yamada, Shinya / Sawano, Kentarou / Lazarov, Vlado K. / Hamaya, Kohei et al. | 2019
- 034001
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Defects coupling impacts on mono-layer WSe~2 tunneling field-effect transistorsWu, Jixuan / Ma, Xiaolei / Chen, Jiezhi / Jiang, Xiangwei et al. | 2019
- 034002
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InAlN underlayer for near ultraviolet InGaN based light emitting diodesHaller, Camille / Carlin, Jean-François / Mosca, Mauro / Rossell, Marta D. / Erni, Rolf / Grandjean, Nicolas et al. | 2019
- 034003
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Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructuresZhao, Zhibo / Singh, Akshay / Chesin, Jordan / Armitage, Rob / Wildeson, Isaac / Deb, Parijat / Armstrong, Andrew / Kisslinger, Kim / Stach, Eric A. / Gradečak, Silvija et al. | 2019
- 035001
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Near-infrared photodetection based on erbium chloride borate nanobeltsFu, Yue / Qi, Zhaoyang / Xu, Xing / Li, Lihui / Wang, Xiaoxia / Zhu, Xiaoli / Zhuang, Xiujuan / Pan, Anlian et al. | 2019
- 035002
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Bimodal hybrid lightweight sound-absorbing material with high stiffnessRuan, Ju-Qi / Mosanenzadeh, Shahrzad Ghaffari / Li, Xin / Yu, Si-Yuan / Ma, Chu / Lin, Xin / Zhang, Shan-Tao / Lu, Ming-Hui / Fang, Nicholas X. / Chen, Yan-Feng et al. | 2019
- 035003
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The electronic structures and optical gain of dilute nitride GaAs nanowires under uniaxial stressXiong, Wen / Hu, Jie / Wang, Jian-Wei et al. | 2019
- 035004
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Improved thermal stability of CsPbBr~3 quantum dots by ligand exchange and their application to light-emitting diodesSasaki, Hironao / Kamata, Norihiko / Honda, Zentaro / Yasuda, Takeshi et al. | 2019
- 035005
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Dethermalization of carriers in GaAs solar cells with quantum objectsMintairov, Mikhail A. / Evstropov, Valery V. / Mintairov, Sergei A. / Shvarts, Maxim Z. / Kalyuzhnyy, Nikolay A. et al. | 2019
- 035501
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Thickness-dependent 109° domain evolution in multiferroic BiFeO~3 thin filmsGuo, Yizhong / Qi, Yajun / Wang, Jinzhao / Zhang, Tianjin / Chen, Zuhuang et al. | 2019
- 035502
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The substantial dislocation reduction by preferentially passivating etched defect pits in GaN epitaxial growthHu, Wei / Die, Junhui / Wang, Caiwei / Yan, Shen / Hu, Xiaotao / Du, Chunhua / Jiang, Yang / Deng, Zhen / Wang, Lu / Jia, Haiqiang et al. | 2019
- 035503
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Cyclic voltammetry for morphological analysis of InGaN epitaxial layers and nanostructuresWang, Peng / Yin, Hongjie / Wang, Xingyu / Xie, Lingyun / Zhou, Guofu / Nötzel, Richard et al. | 2019
- 035504
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Fano resonances and bound states in the continuum in a simple phononic systemMizuno, Seiji et al. | 2019
- 036001
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Effects of sheath gas flow on He atmospheric pressure plasma jetOgawa, Kotaro / Yajima, Hideki / Oh, Jun-Seok / Furuta, Hiroshi / Hatta, Akimitsu et al. | 2019
- 036501
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AlGaN/GaN HEMT with LPCVD deposited SiN and PECVD deposited SiCOH low-k passivationZhang, Lin-Qing / Wang, Peng-Fei et al. | 2019
- 036502
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Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatmentHao, Ronghui / Sun, Chi / Fang, Bin / Xu, Ning / Tao, Zhifu / Zhang, Hui / Wei, Xing / Lin, Wenkui / Zhang, Xiaodong / Yu, Guohao et al. | 2019
- 036503
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Enhancement of n-type GaN (20—21) semipolar surface morphology in photo-electrochemical undercut etchingAbbas, Arwa Saud / Alyamani, Ahmed Y. / Nakamura, Shuji / Dembaars, Steven P. et al. | 2019
- 036504
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Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrorsMishkat-Ul-Masabih, Saadat M. / Aragon, Andrew A. / Monavarian, Morteza / Luk, Ting S. / Feezell, Daniel F. et al. | 2019
- 037001
-
Low-frequency noise spectroscopy of charge-density-wave phase transitions in vertical quasi-2D 1T-TaS~2 devicesSalgado, Ruben / Mohammadzadeh, Amirmahdi / Kargar, Fariborz / Geremew, Adane / Huang, Chun-Yu / Bloodgood, Matthew A. / Rumyantsev, Sergey / Salguero, Tina T. / Balandin, Alexander A. et al. | 2019