Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates (English)
- New search for: Neplokh, Vladimir
- New search for: Ali, Ahmed
- New search for: Julien, François H.
- New search for: Foldyna, Martin
- New search for: Mukhin, Ivan
- New search for: Cirlin, George
- New search for: Harmand, Jean-Christophe
- New search for: Gogneau, Noëlle
- New search for: Tchernycheva, Maria
- New search for: Neplokh, Vladimir
- New search for: Ali, Ahmed
- New search for: Julien, François H.
- New search for: Foldyna, Martin
- New search for: Mukhin, Ivan
- New search for: Cirlin, George
- New search for: Harmand, Jean-Christophe
- New search for: Gogneau, Noëlle
- New search for: Tchernycheva, Maria
In:
Materials science in semiconductor processing
;
55
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72-78
;
2016
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ISSN:
- Article (Journal) / Print
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Title:Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates
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Contributors:Neplokh, Vladimir ( author ) / Ali, Ahmed ( author ) / Julien, François H. ( author ) / Foldyna, Martin ( author ) / Mukhin, Ivan ( author ) / Cirlin, George ( author ) / Harmand, Jean-Christophe ( author ) / Gogneau, Noëlle ( author ) / Tchernycheva, Maria ( author )
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Published in:Materials science in semiconductor processing ; 55 ; 72-78
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Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
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Publication date:2016-01-01
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Size:7 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.38152
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.38152 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 55
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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PrefaceCavalcoli, Daniela / Cros, Ana / Rigutti, Lorenzo et al. | 2016
- 2
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GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodesChern, Kevin T. / Allen, Noah P. / Ciarkowski, Timothy A. / Laboutin, Oleg A. / Welser, Roger E. / Guido, Louis J. et al. | 2016
- 7
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Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wellsAlamé, Sabine / Quezada, Andrea Navarro / Skuridina, Daria / Reich, Christoph / Henning, Dimitri / Frentrup, Martin / Wernicke, Tim / Koslow, Ingrid / Kneissl, Michael / Esser, Norbert et al. | 2016
- 12
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Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructuresMutta, Geeta Rani / Carapezzi, Stefania / Vilalta-Clemente, Arantxa / Kauffman, Nils A.K. / Grandjean, Nicolas / Cavallini, Anna et al. | 2016
- 19
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Reprint of: Electron channelling contrast imaging for III-nitride thin film structuresNaresh-Kumar, G. / Thomson, D. / Nouf-Allehiani, M. / Bruckbauer, J. / Edwards, P.R. / Hourahine, B. / Martin, R.W / Trager-Cowan, C. et al. | 2016
- 26
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Surface properties of AlInGaN/GaN heterostructureMinj, A. / Skuridina, D. / Cavalcoli, D. / Cros, A. / Vogt, P. / Kneissl, M. / Giesen, C. / Heuken, M. et al. | 2016
- 32
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Reprint of: GaN nanowires on diamondHetzl, Martin / Schuster, Fabian / Winnerl, Andrea / Weiszer, Saskia / Stutzmann, Martin et al. | 2016
- 46
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Interfacial properties of self-assembled GaN nanowires on pre-processed Al2O3(0001) surfacesKoukoula, T. / Kioseoglou, J. / Kehagias, Th. / Furtmayr, F. / Eickhoff, M. / Kirmse, H. / Karakostas, Th. / Komninou, Ph. et al. | 2016
- 51
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Metalorganic chemical vapor deposition of GaN nanowires: From catalyst-assisted to catalyst-free growth, and from self-assembled to selective-area growthAlloing, Blandine / Zúñiga-Pérez, Jesús et al. | 2016
- 59
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Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameterBengoechea-Encabo, A. / Albert, S. / Sánchez-Garcia, M.A. / Calleja, E. et al. | 2016
- 63
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Phonon–plasmon coupling in Si doped GaN nanowiresRozas-Jiménez, E. / Cros, A. / Murcia-Mascarós, S. / Fang, Z. / Daudin, B. et al. | 2016
- 67
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Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarityBrubaker, Matt D. / Roshko, Alexana / Blanchard, Paul T. / Harvey, Todd E. / Sanford, Norman A. / Bertness, Kris A. et al. | 2016
- 72
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Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substratesNeplokh, Vladimir / Ali, Ahmed / Julien, François H. / Foldyna, Martin / Mukhin, Ivan / Cirlin, George / Harmand, Jean-Christophe / Gogneau, Noëlle / Tchernycheva, Maria et al. | 2016
- 79
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Chemical composition fluctuations and strain relaxation in InGaN nanowires: The role of the metal/nitrogen flux ratioZhang, Xin / Belloeil, Matthias / Jouneau, Pierre-Henri / Bougerol, Catherine / Gayral, Bruno / Daudin, Bruno et al. | 2016
- 85
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Electronic and optical properties of InN nanowiresMengistu, H.T. / García-Cristóbal, A. et al. | 2016
- 90
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Reprint of: Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: The effect of stacking faults in the reduction of the internal electric fieldBudagosky, J.A. / Garro, N. / Cros, A. / García-Cristóbal, A. / Founta, S. / Daudin, B. et al. | 2016
- 95
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Ultraviolet light emitting diodes using III-N quantum dotsBrault, Julien / Matta, Samuel / Ngo, Thi-Huong / Rosales, Daniel / Leroux, Mathieu / Damilano, Benjamin / Khalfioui, Mohamed Al / Tendille, Florian / Chenot, Sébastien / De Mierry, Philippe et al. | 2016