Effect of target ferroelectric niobate crystal structure on topochemical processes and product morphology with the Nb2O5 precursor (English)
- New search for: Fu, Jing
- New search for: Hou, Yudong
- New search for: Ge, Haiyan
- New search for: Zheng, Mupeng
- New search for: Zhu, Mankang
- New search for: Fu, Jing
- New search for: Hou, Yudong
- New search for: Ge, Haiyan
- New search for: Zheng, Mupeng
- New search for: Zhu, Mankang
In:
Journal of crystal growth
;
509
;
96-102
;
2019
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ISSN:
- Article (Journal) / Print
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Title:Effect of target ferroelectric niobate crystal structure on topochemical processes and product morphology with the Nb2O5 precursor
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Contributors:Fu, Jing ( author ) / Hou, Yudong ( author ) / Ge, Haiyan ( author ) / Zheng, Mupeng ( author ) / Zhu, Mankang ( author )
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Published in:Journal of crystal growth ; 509 ; 96-102
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Publisher:
- New search for: Elsevier Science B.V., Amsterdam.
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Publication date:2019-01-01
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Size:7 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 548.505
- Further information on Dewey Decimal Classification
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Classification:
DDC: 548.505 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 509
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubitsMazzocchi, V. / Sennikov, P.G. / Bulanov, A.D. / Churbanov, M.F. / Bertrand, B. / Hutin, L. / Barnes, J.P. / Drozdov, M.N. / Hartmann, J.M. / Sanquer, M. et al. | 2019
- 8
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The effects of different types of additives on growth of biomineral phases investigated by in situ atomic force microscopyCho, Kang Rae / Kulshreshtha, Prashant / Wu, Kuang Jen J. / Seto, Jong / Qiu, S. Roger / De Yoreo, James J. et al. | 2019
- 17
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Novel approach to study dispersion in growth and dissolution rate of crystals from solutionsKaya, Mustafa / Ceyhan, Ayhan Abdullah / Abut, Serdar / Şahin, Ömer et al. | 2019
- 23
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Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxyRamesh, C. / Tyagi, P. / Abhiram, G. / Gupta, G. / Senthil Kumar, M. / Kushvaha, S.S. et al. | 2019
- 29
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Macroscopic kinetics of melt crystallization of caprolactamLiu, Baoshu / Wang, Yingdi / Sun, Hua et al. | 2019
- 35
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Growth of CdMnTe free of large Te inclusions using the vertical Bridgman techniqueRoy, U.N. / Camarda, G.S. / Cui, Y. / Gul, R. / Hossain, A. / Yang, G. / Okobiah, O.K. / Egarievwe, S.U. / James, R.B. et al. | 2019
- 40
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Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substratesSundaram, Suresh / Li, Xin / Alam, Saiful / Halfaya, Yacine / Patriarche, Gilles / Ougazzaden, Abdallah et al. | 2019
- 44
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Crystal growth and characterization of γ-glycine grown from AgSO4 for nonlinear optical applicationsVijayalakshmi, V. / Dhanasekaran, P. et al. | 2019
- 50
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Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxyLiu, Zhibin / Nitta, Shugo / Usami, Shigeyoshi / Robin, Yoann / Kushimoto, Maki / Deki, Manato / Honda, Yoshio / Pristovsek, Markus / Amano, Hiroshi et al. | 2019
- 54
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Catalyst/surfactant co-assisted colloidal synthesis and optical properties of ultrathin/ultralong ZnSe nanowiresWang, Junli / Qiao, Yajie / Wang, Tingting / Chen, Kangmin et al. | 2019
- 60
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Thermal analysis and crystal growth of doped Nb2O5Hidde, Julia / Guguschev, Christo / Klimm, Detlef et al. | 2019
- 66
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Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS modeYoshimura, S. / Takano, K. / Ishida, K. / Shimomura, K. et al. | 2019
- 71
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Modeling anisotropic shape evolution during Czochralski growth of oxide single crystalsWeinstein, Oleg / Virozub, Alexander / Miller, Wolfram / Brandon, Simon et al. | 2019
- 87
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High throughput MOVPE and accelerated growth rate of GaAs for PV applicationUbukata, Akinori / Sodabanlu, Hassanet / Aihara, Taketo / Oshima, Ryuji / Sugaya, Takeyoshi / Koseki, Shuichi / Matsumoto, Koh / Watanabe, Kentaroh / Nakano, Yoshiaki / Sugiyama, Masakazu et al. | 2019
- 91
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Catalyst-free growth of single crystalline β-Ga2O3 microbelts on patterned sapphire substratesFeng, Qiuju / Li, Tongtong / Li, Fang / Li, Yunzheng / Shi, Bo / Gao, Chong / Wang, Deyu / Liang, Hongwei et al. | 2019
- 96
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Effect of target ferroelectric niobate crystal structure on topochemical processes and product morphology with the Nb2O5 precursorFu, Jing / Hou, Yudong / Ge, Haiyan / Zheng, Mupeng / Zhu, Mankang et al. | 2019
- 103
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Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD toolTsukui, Masayuki / Iyechika, Yasushi / Nago, Hajime / Takahashi, Hideshi et al. | 2019
- 107
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Corona assisted gallium oxide nanowire growth on silicon carbideReiprich, Johannes / Kups, Thomas / Schlag, Leslie / Isaac, Nishchay A. / Biswas, Shantonu / Breiling, Jonas / Schaaf, Peter / Stauden, Thomas / Pezoldt, Jörg / Jacobs, Heiko O. et al. | 2019
- 112
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Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexesWu, Hsiang-Jung / Tomiyama, Nobuki / Nagai, Hiroki / Sato, Mitsunobu et al. | 2019
- 118
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Zinc blende and wurtzite crystal structure formation in gold catalyzed InGaAs nanowiresJohansson, Jonas / Leshchenko, Egor D. et al. | 2019
- 124
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Preparation, structure and scintillation of cesium hafnium chloride bromide crystalsRowe, E. / Goodwin, W.B. / Bhattacharya, P. / Cooper, G. / Schley, N. / Groza, M. / Cherepy, N.J. / Payne, S.A. / Burger, A. et al. | 2019
- 129
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Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface chargeTajima, Jumpei / Hikosaka, Toshiki / Kuraguchi, Masahiko / Nunoue, Shinya et al. | 2019
- 133
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Thermodynamic modelling of InAs/InP(0 0 1) growth towards quantum dots formation by metalorganic vapor phase epitaxyHasan, Samiul / Merckling, Clement / Pantouvaki, Marianna / Meersschaut, Johan / Van Campenhout, Joris / Vandervorst, Wilfried et al. | 2019
- 141
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High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1 1 0) Si substrates grown by ammonia molecular beam epitaxyNoh, Young-Kyun / Lee, Sang-Tae / Kim, Moon-Deock / Oh, Jae-Eung et al. | 2019
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Editorial Board| 2019