Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\mathrm{{max}}}$ (English)
In:
IEEE electron device letters
;
40
, 1
;
131-134
;
2019
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ISSN:
- Article (Journal) / Print
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Title:Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\mathrm{{max}}}$
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Published in:IEEE electron device letters ; 40, 1 ; 131-134
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Publisher:
- New search for: IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS
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Publication date:2019-01-01
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Size:4 pages
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 621.3815
- Further information on Dewey Decimal Classification
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Classification:
DDC: 621.3815 -
Source:
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Table of contents – Volume 40, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Table of contents| 2019
- 4
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Change of Editor-in-ChiefMomose, Hisayo S. / Alamo, Jesus A. del et al. | 2019
- 5
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Changes to the Editorial BoardLiu, Tsu-Jae King et al. | 2019
- 9
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Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q SwingPeng, Yue / Xiao, Wenwu / Han, Genquan / Wu, Jibao / Liu, Huan / Liu, Yan / Xu, Nuo / Liu, Tsu-Jae King / Hao, Yue et al. | 2019
- 13
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AC Device Variability in High- $\kappa$ Metal-Gate CMOS TechnologyJenkins, Keith A. / Balakrishnan, Karthik / Lee, Dongsoo / Narayanan, Vijay et al. | 2019
- 17
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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm GatesBaca, Albert G. / Klein, Brianna A. / Wendt, Joel R. / Lepkowski, Stefan M. / Nordquist, Christopher D. / Armstrong, Andrew M. / Allerman, Andrew A. / Douglas, Erica A. / Kaplar, Robert J. et al. | 2019
- 21
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Investigation of Erase Cycling Induced TSG Vt Shift in 3D NAND Flash MemoryYan, Liang / Jin, Lei / Zou, Xingqi / Ai, Di / Li, Da / Zhang, An / Wei, Huazheng / Chen, Yi / Huo, Zongliang et al. | 2019
- 24
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A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching BehaviorsWu, Quantan / Lu, Congyan / Wang, Hong / Cao, Jingchen / Yang, Guanhua / Wang, Jiawei / Gong, Yuxin / Shi, Xuewen / Chuai, Xichen / Lu, Nianduan et al. | 2019
- 28
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Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term VariationMiranda, E. / Mehonic, A. / Ng, W. H. / Kenyon, A. J. et al. | 2019
- 32
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Effect of Hf Alloy in ZrOx Gate Insulator for Solution Processed a-IZTO Thin Film TransistorsBukke, Ravindra Naik / Naik Mude, Narendra / Lee, Jiseob / Avis, Christophe / Jang, Jin et al. | 2019
- 36
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Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOyCai, Wensi / Wilson, Joshua / Zhang, Jiawei / Park, Seonghyun / Majewski, Leszek / Song, Aimin et al. | 2019
- 40
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The Influence of Anion Composition on Subgap Density of States and Electrical Characteristics in ZnON Thin-Film TransistorsJang, Jun Tae / Kang, Hara / Yu, Hye Ri / Kim, Eok Su / Son, Kyoung Seok / Cho, Seong-Ho / Kim, Dong Myong / Choi, Sung-Jin / Kim, Dae Hwan et al. | 2019
- 44
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Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)Fernandez, Eduardo F. / Seoane, Natalia / Almonacid, Florencia / Garcia-Loureiro, Antonio J. et al. | 2019
- 48
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Fabrication of High-Gain Photodetector With Graphene–PbSe HeterostructureRen, Yixuan / Dai, Tianjun / He, Bo / Liu, Xingzhao et al. | 2019
- 51
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A 4H-SiC BJT as a Switch for On-Chip Integrated UV PhotodiodeHou, Shuoben / Hellstrom, Per-Erik / Zetterling, Carl-Mikael / Ostling, Mikael et al. | 2019
- 55
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SnSe/SiO2/Si Heterostructures for Ultrahigh-Sensitivity and Broadband Optical Position Sensitive DetectorsHao, Lanzhong / Xu, Hanyang / Dong, Shichang / Du, Yongjun / Luo, Li / Zhang, Caiyan / Liu, Hui / Wu, Yupeng / Liu, Yunjie et al. | 2019
- 59
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Tunable Deep-Red Electroluminescence From Flexible Quasi-2D Perovskites Light-Emitting DiodesRui, Hongsong / Li, Lin / Zhang, Nan / Lin, Xin / Hua, Yulin / Wu, Xiaoming / Wang, Di / Yin, Shougen et al. | 2019
- 63
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Analysis of the Novel Snapback-Free LIGBT With Fast-Switching and Improved Latch-Up Immunity by TCAD SimulationDuan, Baoxing / Licheng, Sun / Yang, Yintang et al. | 2019
- 67
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Ti/Au/Al/Ni/Au Low Contact Resistance and Sharp Edge Acuity for Highly Scalable AlGaN/GaN HEMTsYadav, Yogendra K. / Upadhyay, Bhanu B. / Meer, Mudassar / Bhardwaj, Navneet / Ganguly, Swaroop / Saha, Dipankar et al. | 2019
- 71
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A Novel IGBT With Self-Regulated Potential for Extreme Low EMI NoiseXu, Xiaorui / Chen, Wanjun / Liu, Chao / Chen, Nan / Wang, Fangzhou / Wang, Yuan / Zhang, Kenan / Ma, Yinchang / Zhang, Shuyi / Zhou, Qi et al. | 2019
- 75
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Large-Area 1.2-kV GaN Vertical Power FinFETs With a Record Switching Figure of MeritZhang, Yuhao / Sun, Min / Perozek, Josh / Liu, Zhihong / Zubair, Ahmad / Piedra, Daniel / Chowdhury, Nadim / Gao, Xiang / Shepard, Kenneth / Palacios, Tomas et al. | 2019
- 79
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Simulation Study of a Power MOSFET With Built-in Channel Diode for Enhanced Reverse Recovery PerformanceZhang, Meng / Wei, Jin / Zhou, Xianda / Jiang, Huaping / Li, Baikui / Chen, Kevin J. et al. | 2019
- 83
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Source-Field-Plated $\beta$ -Ga2O3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm2Lv, Yuanjie / Zhou, Xingye / Long, Shibing / Song, Xubo / Wang, Yuangang / Liang, Shixiong / He, Zezhao / Han, Tingting / Tan, Xin / Feng, Zhihong et al. | 2019
- 87
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Significant Threshold Voltage Shift Induced by Ge Penetration into PMOSFET Channel of 28-nm SRAMLi, Run-Ling / Wang, Lin-Lin / Jiang, Yu-Long et al. | 2019
- 91
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Large Grain Ruthenium for Alternative InterconnectsYoon, Seong Jun / Lee, Sangjae / Lee, Tae In / Yoon, Alexander / Cho, Byung Jin et al. | 2019
- 95
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Development of Eccentric Spin Coating of Polymer Liner for Low-Temperature TSV Technology With Ultra-Fine DiameterXiong, Miao / Chen, Zhiming / Ding, Yingtao / Kino, Hisashi / Fukushima, Takafumi / Tanaka, Tetsu et al. | 2019
- 99
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Uniform Insulating Properties of Low-Temperature Curable Gate Dielectric for Organic Thin-Film Transistor Arrays on Plastic SubstrateKim, Joo-Young / Song, Byonggwon / Kim, Jungwoo / Koo, Bonwon / Kim, Hyoek / Jung, Myung-Sup / Lee, Bang-Lin / Park, Jeong-Il / Kim, Jang-Joo et al. | 2019
- 103
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High-Frequency Surface Acoustic Wave Devices Based on ZnO/SiC Layered StructureFu, Sulei / Wang, Weibiao / Qian, Lirong / Li, Qi / Lu, Zengtian / Shen, Junyao / Song, Cheng / Zeng, Fei / Pan, Feng et al. | 2019
- 107
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Light-Shield Layers Free Photosensitive Inverters Comprising GaN-Drivers and Multi-Layered MoS2-LoadsSeo, Seung Gi / Han, Sang-Woo / Cha, Ho-Young / Yang, Sunggu / Jin, Sung Hun et al. | 2019
- 111
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Enhanced Flexible Piezoelectric Sensor by the Integration of P(VDF-TrFE)/AgNWs Film With a-IGZO TFTZhang, Zhihan / Chen, Longlong / Yang, Xiang / Li, Tongkuai / Chen, Xin / Li, Xifeng / Zhao, Tingting / Zhang, Jianhua et al. | 2019
- 115
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Improved Design of a Photon Enhanced Thermionic Energy ConverterLiao, Tianjun et al. | 2019
- 119
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Barrier Height Inhomogeneity in Mixed-Dimensional Graphene/Single CdSe Nanobelt Schottky JunctionsJin, Weifeng / Liu, Yufei / Yuan, Kai / Zhang, Kun / Ye, Yu / Wei, Wei / Dai, Lun et al. | 2019
- 123
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High-Performance ReS2 FET for Optoelectronics and Flexible Electronics ApplicationsZhang, Min / Li, Han / Xu, Jing / Zhu, Hao / Chen, Lin / Sun, Qingqing / Zhang, David Wei et al. | 2019
- 127
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Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICsBonen, S. / Alakusu, U. / Duan, Y. / Gong, M. J. / Dadash, M. S. / Lucci, L. / Daughton, D. R. / Adam, G. C. / Iordanescu, S. / Pasteanu, M. et al. | 2019
- 131
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Graphene Field-Effect Transistors With High Extrinsic ${f}_{T}$ and ${f}_{\mathrm{{max}}}$Bonmann, Marlene / Asad, Muhammad / Yang, Xinxin / Generalov, Andrey / Vorobiev, Andrei / Banszerus, Luca / Stampfer, Christoph / Otto, Martin / Neumaier, Daniel / Stake, Jan et al. | 2019
- 135
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Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 TransistorsAlharbi, Abdullah / Huang, Zhujun / Taniguchi, Takashi / Watanabe, Kenji / Shahrjerdi, Davood et al. | 2019
- 139
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Indium–Gallium–Zinc–Oxide Schottky Synaptic Transistors for Silent Synapse Conversion EmulationHe, Yongli / Nie, Sha / Liu, Rui / Shi, Yi / Wan, Qing et al. | 2019
- 143
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EDS Meetings Calendar| 2019
- 146
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IEEE Electron Device Letters information for authors| 2019
- 147
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2019 Symposium on VLSI Circuits| 2019
- 148
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Second Announcement and Call for Papers 2019 Symposium on VLSI Circuits| 2019
- 149
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The 46th IEEE Photovoltaic Specialist Conference| 2019
- 150
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Call for Papers International Interconnect Technology Conference| 2019
- 151
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3rd Electron Devices Technology and Manufacturing (EDTM) Conference 2019| 2019
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Front cover| 2019
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IEEE Electron Device Letters| 2019
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